CN102277562B - Multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for thin-film solar batteries - Google Patents
Multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for thin-film solar batteries Download PDFInfo
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- CN102277562B CN102277562B CN 201110232954 CN201110232954A CN102277562B CN 102277562 B CN102277562 B CN 102277562B CN 201110232954 CN201110232954 CN 201110232954 CN 201110232954 A CN201110232954 A CN 201110232954A CN 102277562 B CN102277562 B CN 102277562B
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Abstract
The invention relates to multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for depositing thin-film solar batteries and belongs to the technical field of solar batteries. The invention solves the technical problems that the conventional PECVD equipment is difficult to operate, the utilization rate of process gas is low and the like. The multi-stage PECVD equipment for the thin-film solar batteries comprises a deposition box arranged in a vacuum chamber, wherein the deposition box is a multi-stage deposition chamber formed by serially connecting a plurality of deposition chambers; the first-stage deposition chamber of the chamber is communicated with an intake chamber; the wall of the chamber is provided with vent holes; the adjacent deposition chambers are serially connected by gas mixing chambers; gas supplementing pipelines are also arranged in the deposition chamber; and electrode plates provided with deposition substrates are fixed in the deposition chamber. The multi-stage PECVD equipment has a multi-stage deposition chamber structure, various stages of deposition chambers are effectively connected by the gas mixing chambers, and the utilization rate of the process gas is effectively improved in the preparation process of PECVD thin films.
Description
Technical field
The present invention relates to a kind of multiple plasma for the deposit film solar cell and strengthen chemical vapour deposition (PECVD) equipment, belong to technical field of solar batteries.
Background technology
The PECVD(plasma enhanced chemical vapor deposition) be to promote the reaction of film generation by the plasma discharge generation active group of process gas, can significantly reduce the temperature of chemical vapor deposition (CVD) film preparation, the CVD plated film reaction that some need at high temperature be carried out originally can be carried out at a lower temperature, the major advantage of PECVD is to be adapted at the large-area film of preparation under cold condition, can make semiconductor film and the dielectric film of high-quality, obtain a wide range of applications in fields such as thin-film solar cells, flat pannel display in recent years.For the PECVD equipment framework that extensively adopts at present, as adopt the United States Patent (USP) " Low-Cost and High Performance Solar Cell Manufacturing Machine " (US 2007/0137574 A1) of deposited in single chamber and multicell in parallel deposition as United States Patent (USP) " Chamber for PECVD " (US 2011/0097878 A1) etc., the plasma body of process gas its composition in the process of mobile and film forming changes along with the consumption of process gas, causes the homogeneity of the film of PECVD preparation to change on air flow line.For solving this type of homogeneity question, can adopt the method for increasing process gas flow/flow velocity, but this method tend to reduce PECVD to process gas (as SiH
4, GeH
4Deng) utilization ratio, in the market a lot of PECVD equipment to the practical efficiency of process gas less than 50%.And PECVD equipment process gas used is (as SiH
4, GeH
4Deng) mostly purity requirement is very high, expensive, the above SiH of purity 99.999% on domestic market in 2010 for example
4Price mostly 800 yuan/more than kg, and high purity GeH
4Price is high purity SiH
4More than 20 times of price.Therefore, the gas effciency that improves PECVD equipment is for the production cost that reduces PECVD and to promote the PECVD film product (as silicon-based film solar cells etc.) of high performance-price ratio significant.Chinese patent ZL200880024496.9 " circulating and recycling of silane ", collect the plasma enhanced chemical vapor deposition legal system for the mixture of unreacted silane in thin-film solar cells or silane and hydrogen, and the gas re-circulation of collecting is arrived the sediment chamber, make the utilization ratio of silane improve 2-5 doubly.Although Chinese patent ZL200880024496.9 can improve the utilization ratio of silane, its complicated operation is mainly be used to a plurality of sediment chambers that are connected in parallel, and the gas that reclaims must together use with gas source.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, solve the technical problems such as PECVD depositing device process gas utilization ratio is low, complicated operation, provide a kind of multiple plasma for the deposit film solar cell to strengthen chemical vapour deposition (PECVD) equipment.
In order to realize above task, the technical solution used in the present invention is: the multistage PECVD depositing device of a kind of thin-film solar cells, comprise the deposition box that is arranged in vacuum chamber, described deposition box is the multistage deposition chamber that is made of a plurality of deposition chambers series connection, the first step deposition chambers of this cavity is communicated with inlet plenum, and the chamber wall of cavity is provided with ventilating pit, the deposited adjacent chamber is connected into one by mixing chamber, described deposition chamber also is provided with the tonifying Qi pipeline, and the battery lead plate that deposition substrate is housed is fixed on deposition chamber.
The upper and lower cavity wall of deposition chambers also is provided with the slot of installing electrodes plate, and a plurality of negative plates and positive plate are arranged on and consist of the battery lead plate array in slot.Be provided with gas filtration equipment in mixing chamber.
The substrate quantity that is provided with the deposition chamber of tonifying Qi pipeline equates.
Multistage deposition chamber is made of two deposition chambers series connection, and wherein the both sides of first step deposition chamber are provided with the bypass gas pipeline, and the battery lead plate quantity of the first step and second stage deposition chamber equates.
Substrate quantity in multistage deposition chamber is the distribution of successively decreasing step by step.Consumption according to process gas, the substrate quantity of placing in general next stage deposition chamber is less than the substrate quantity of placing in the upper level deposition chamber, the substrate that can guarantee so different deposit cavity internal depositions has excellent homogeneity and performance, makes again process gas be fully used.
The volume of the deposition chambers at different levels in multistage deposition chamber equates or successively decreases step by step, so that the substrate that deposition chamber not at the same level can the unidimensional specification of sediment-filled phase, also can deposit the substrate of different size specification.
Number of air hole on chamber wall in multistage deposition chamber is the distribution of successively decreasing step by step, so that concentration can be assembled and adjust to process gas in mixing chamber.
The present invention also provides a kind of PECVD deposition method of thin-film solar cells, the deposition box that installs battery lead plate and deposition substrate is pushed vacuum chamber, described deposition box is the multistage deposition chamber that is made of a plurality of deposition chambers series connection, and the deposited adjacent chamber in this cavity is connected by mixing chamber;
On the wall of the chamber of multistage deposition chamber, ventilating pit is set, the first step deposition chambers of this cavity is communicated with inlet plenum, and process gas enters first step deposition chambers and deposits at substrate;
The residue process gas of first step deposition chamber passes into mixing chamber, and assembles the increase gas concentration in mixing chamber;
Process gas in mixing chamber passes into second stage deposition chambers after filtering, deposits on the substrate in this chamber;
Until the substrate of last step deposition chamber deposition is complete.
Number of air hole on multistage deposit cavity body cavity wall successively decreases step by step, and the residue process gas concentration that enters in mixing chamber is increased.
Along with successively decreasing of the number of air hole of deposition chamber at different levels, substrate quantity in multistage deposition chamber is also successively decreased step by step, so that concentration can be assembled and adjust to process gas in mixing chamber, make process gas be fully used, guarantee that the substrate of different deposit cavity internal depositions has excellent homogeneity and performance.
Also be provided with the tonifying Qi pipeline in multistage deposition chamber, ensure enough industrial gasses that are used for deposition.The substrate quantity that is provided with the deposition chamber of tonifying Qi pipeline equates.
Positively effect of the present invention is: by mixing chamber, deposition box is divided into the deposition chambers of a plurality of mutual series connection, form multistage deposition chamber structure, deposition chamber at different levels effectively connect by mixing chamber each other, to realize that process gas can flow into successively deposition chamber at different levels and react deposit film by plasma discharge, simple to operate, effectively improved in PECVD film preparation process the utilization ratio to process gas.And deposition chamber also is provided with the tonifying Qi pipeline, but make-up gas increases concentration, further guarantees deposition quality.
Description of drawings
Fig. 1: structural representation of the present invention.
Fig. 2: the skeleton construction schematic diagram of deposition box 02 in Fig. 1.
The structural representation of Fig. 3: embodiment one.
The structural representation of Fig. 4: embodiment two.
The structural representation of Fig. 5: embodiment three.
The structural representation of Fig. 6: embodiment four.
The skeleton construction schematic diagram of Fig. 7: embodiment four.
In Fig. 1 to Fig. 6,01 is vacuum chamber, and 02 is that deposition box, 03 is support, 04 is intake ducting, and 20 is ventilating pit, and 21 is framework, 22 is second stage deposition chamber, and 23 is mixing chamber, and 24 is first step deposition chamber, 25 is inlet plenum, 26 is battery lead plate, and 27 is substrate, and 28 are gas filtration equipment, 29 is third stage deposition chamber, and 30 are the tonifying Qi pipeline.
Embodiment
Embodiment 1:
the depositing device of thin-film solar cells mainly is comprised of vacuum chamber 01 and deposition box 02, inlet plenum 25 and mixing chamber 23 are fixed on the framework 21 of deposition box 02, the upper and lower cavity wall of deposition chambers also is provided with the slot of installing electrodes plate 26, have ventilating pit 20 on dividing plate, the quantity of ventilating pit 20 is at the different amts of different cavitys, number of air hole on the chamber wall of general next stage deposition chamber is less than the ventilation hole count of upper level deposition chamber, mixing chamber 23 is connected into one with multistage deposition chamber, simultaneously sedimentary province is divided into first step deposition chamber 24, second stage deposition chamber 22, third stage deposition chamber 29, etc., be provided with gas filtration equipment 28 in mixing chamber 23, gas filtration equipment 28 can be removed the interior impurity such as dust of process gas of the higher level's deposition chamber of flowing through, improve the film preparation quality of subordinate's deposition chamber, intake ducting 04 is connected with inlet plenum 25 on deposition box 02.during deposition, the deposition box 02 that installs deposition substrate 27 is pushed in vacuum chamber 01, intake ducting 04 is communicated with inlet plenum 25, process gas enters in inlet plenum 25, ventilating pit 20 from inlet plenum 25 lower clapboards (being the epicoele wall of first step deposition chamber) enters in first step deposition chamber 24, substrate 27 in first step deposition chamber 24 is deposited, unnecessary process gas enters in mixing chamber 23 from the ventilating pit 27 of mixing chamber 23 upper spacers (being the cavity of resorption wall of first step deposition chamber), and make concentration increase, ventilating pit 27 from mixing chamber 23 lower clapboards (being the epicoele wall of second stage deposition chamber) enters in second stage deposition chamber 22 again, begin the substrate 27 in second stage deposition chamber 22 is deposited, the rest may be inferred, depositing of one-level one-level, until all complete.
see Fig. 3, the deposition box 02 of the present embodiment is the second stage deposition chamber that is made of two deposition chambers series connection, deposition box 02 is divided into by a mixing chamber 23, lower two-stage deposition chamber forms, first step deposition chamber 24 is identical with the height of second stage deposition chamber 22, can deposit the substrate 27 of same specification, but battery lead plate 26 quantity in second stage deposition chamber 22 are less than first step deposition chamber, therefore deposition substrate quantity is less than the quantity in first step deposition chamber, the process gas consumption of bottom deposition chamber is also less than the top deposition chamber, therefore can effectively utilize deposition chamber remaining process gas in top to carry out thin film deposition, improve the utilization ratio of process gas.
Embodiment 2:
PECVD equipment and the embodiment 1 of the present embodiment are similar, also formed by upper and lower two-stage process deposition chamber, but the height of second stage deposition chamber 22 is less than the height of first step deposition chamber 24, therefore substrate 27 sizes in second stage deposition chamber 22 are less than the size of first step deposition chamber 24, in the time of can guaranteeing so the interior deposition of second stage deposition chamber 22, enough process gas scale of constructions are arranged, the thin film deposition quality is high.
Embodiment 3:
The deposition box of the present embodiment is three grades of deposition chamber, be that deposition box 02 is divided into three grades of deposition chamber by two mixing chambers 23 and forms, the height of first step deposition chamber 24 is higher than the height of second stage deposition chamber 22 and third stage deposition chamber 29, the height of second stage deposition chamber 22 is identical with the height of third stage deposition chamber 29, the quantity first step deposition chamber 24 of deposition substrate 27 is maximum, second stage deposition chamber 22 is taken second place, third stage deposition chamber 29 is minimum, the structure that this deposition substrate is step by step successively decreased can realize the peak use rate of process gas.
Embodiment 4:
see Fig. 6 and Fig. 7, the PECVD depositing device of the present embodiment is the secondary deposition chamber, be that deposition box 02 is divided into by a mixing chamber 23, lower two-stage deposition chamber forms, first step deposition chamber 24 is identical with the height of second stage deposition chamber 22, two sedimentary provinces can deposit same specification, the substrate 27 of same quantity, for the gas volume that guarantees second stage deposition chamber 22 enough, install tonifying Qi pipeline 30 additional between inlet plenum 25 and mixing chamber 23, the deposition that a part of gas in inlet plenum 25 is not participated in first step sedimentary province 24 directly enters in mixed gas area 23, gas in mixed gas area 23 process gas that just comprises remaining process gas and directly enter like this, therefore guaranteed enough deposition gas, thereby realize that two deposition chamber can deposit same specification, the substrate 27 of same quantity, guarantee deposition quality.
below by reference to the accompanying drawings embodiments of the invention have been done detailed description, but the present invention is not limited to above-described embodiment, in the ken that those of ordinary skills possess, can also make various variations under the prerequisite that does not break away from aim of the present invention, the multistage deposition chamber that is provided with the tonifying Qi pipeline is not limited to secondary deposition chamber structure, also applicable three grades, the multilevel hierarchies such as level Four, can open as required at different levels in corresponding tonifying Qi pipeline, when taking full advantage of the residue process gas of upper level deposition chambers, the tonifying Qi pipeline can make-up gas, to guarantee the deposition quality of substrate.
Claims (11)
1. multistage PECVD depositing device of thin-film solar cells, comprise the deposition box (02) that is arranged in vacuum chamber (01), it is characterized in that described deposition box (02) is the multistage deposition chamber that is made of a plurality of deposition chambers series connection, the first step deposition chambers (24) of this cavity is communicated with inlet plenum (25), and the chamber wall of cavity is provided with ventilating pit (20), ventilating pit (20) quantity on the chamber wall of multistage deposition chamber is the distribution of successively decreasing step by step, the deposited adjacent chamber is connected into one by mixing chamber (23), described deposition chamber also is provided with tonifying Qi pipeline (30), the battery lead plate (26) that deposition substrate (27) are housed is fixed on deposition chamber.
2. the multistage PECVD depositing device of thin-film solar cells according to claim 1, is characterized in that described substrate (27) quantity that is provided with the deposition chamber of tonifying Qi pipeline equates.
3. the multistage PECVD depositing device of thin-film solar cells according to claim 1, is characterized in that substrate (27) quantity in described multistage deposition chamber is the distribution of successively decreasing step by step.
4. the multistage PECVD depositing device of thin-film solar cells according to claim 1, is characterized in that the volume of the deposition chambers at different levels in described multistage deposition chamber equates or successively decreases step by step.
5. the multistage PECVD depositing device of thin-film solar cells according to claim 1, is characterized in that being provided with in described mixing chamber (23) gas filtration equipment (28).
6. the multistage PECVD depositing device of thin-film solar cells according to claim 1, is characterized in that the upper and lower cavity wall of described deposition chambers also is provided with the slot of installing electrodes plate (26).
7. thin-film solar cells PECVD deposition method, the deposition box (02) that will install battery lead plate (26) and deposition substrate (27) pushes vacuum chamber (01), it is characterized in that described deposition box (02) is the multistage deposition chamber that is made of a plurality of deposition chambers series connection, the deposited adjacent chamber in this cavity is connected by mixing chamber (23);
Ventilating pit (20) is set on the wall of the chamber of multistage deposition chamber, and the quantity of ventilating pit (20) is successively decreased step by step, the first step deposition chambers (24) of this cavity is communicated with inlet plenum (25), and process gas enters first step deposition chambers (24) and deposits at substrate (27);
Residue process gas in first step deposition chambers (24) passes into mixing chamber (23), and assembles the increase gas concentration in mixing chamber;
Process gas in mixing chamber passes into second stage deposition chambers (22) after filtering, and the substrate in this chamber deposits on (27);
Until the substrate of last step deposition chamber deposition is complete.
8. thin-film solar cells PECVD deposition method according to claim 7 is characterized in that substrate (27) quantity in multistage deposition chamber is also successively decreased step by step along with the successively decreasing of the number of air hole of deposition chamber at different levels.
9. thin-film solar cells PECVD deposition method according to claim 7, is characterized in that also being provided with in described multistage deposition chamber tonifying Qi pipeline (30).
10. thin-film solar cells PECVD deposition method according to claim 7, is characterized in that described substrate (26) quantity that is provided with the deposition chamber of tonifying Qi pipeline equates.
11. thin-film solar cells PECVD deposition method according to claim 7 is characterized in that the volume of the deposition chambers at different levels in described multistage deposition chamber equates or successively decreases step by step.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110232954 CN102277562B (en) | 2011-08-15 | 2011-08-15 | Multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for thin-film solar batteries |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110232954 CN102277562B (en) | 2011-08-15 | 2011-08-15 | Multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for thin-film solar batteries |
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| CN102277562A CN102277562A (en) | 2011-12-14 |
| CN102277562B true CN102277562B (en) | 2013-05-08 |
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| CN 201110232954 Expired - Fee Related CN102277562B (en) | 2011-08-15 | 2011-08-15 | Multi-stage plasma enhanced chemical vapor deposition (PECVD) equipment for thin-film solar batteries |
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| CN109980042B (en) * | 2018-12-19 | 2022-10-11 | 黄剑鸣 | HIT heterojunction solar cell manufacturing equipment |
| CN112921302B (en) * | 2021-01-22 | 2024-07-09 | 无锡松煜科技有限公司 | Photovoltaic cell bidirectional air inlet passivation deposition device |
| CN115012032B (en) * | 2022-08-09 | 2022-11-04 | 广州粤芯半导体技术有限公司 | Polycrystalline silicon thin film and forming method thereof |
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|---|---|---|---|---|
| US5515986A (en) * | 1993-05-03 | 1996-05-14 | Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operating same |
| CN101245449A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Plasma case for thin film production in enormous quantities |
| CN101265574A (en) * | 2008-03-14 | 2008-09-17 | 福建钧石能源有限公司 | Thin film deposition apparatus and thin film deposition method |
| TWM365932U (en) * | 2009-03-19 | 2009-10-01 | F S E Corp | Plasma auxiliary chemical vapor deposition equipment |
| CN101880868A (en) * | 2010-06-11 | 2010-11-10 | 深圳市创益科技发展有限公司 | Deposition box for silicon-based film solar cells |
-
2011
- 2011-08-15 CN CN 201110232954 patent/CN102277562B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5515986A (en) * | 1993-05-03 | 1996-05-14 | Balzers Aktiengesellschaft | Plasma treatment apparatus and method for operating same |
| CN101245449A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Plasma case for thin film production in enormous quantities |
| CN101265574A (en) * | 2008-03-14 | 2008-09-17 | 福建钧石能源有限公司 | Thin film deposition apparatus and thin film deposition method |
| TWM365932U (en) * | 2009-03-19 | 2009-10-01 | F S E Corp | Plasma auxiliary chemical vapor deposition equipment |
| CN101880868A (en) * | 2010-06-11 | 2010-11-10 | 深圳市创益科技发展有限公司 | Deposition box for silicon-based film solar cells |
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