CN202323022U - Gas distribution system for base plate type coating equipment - Google Patents
Gas distribution system for base plate type coating equipment Download PDFInfo
- Publication number
- CN202323022U CN202323022U CN 201120489286 CN201120489286U CN202323022U CN 202323022 U CN202323022 U CN 202323022U CN 201120489286 CN201120489286 CN 201120489286 CN 201120489286 U CN201120489286 U CN 201120489286U CN 202323022 U CN202323022 U CN 202323022U
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- sedimentation tank
- spray holes
- sedimentation
- silane gas
- spray apertures
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Abstract
The utility model provides a gas distribution system for base plate type coating equipment. The gas distribution system comprises sedimentation tanks arranged in a sedimentation cavity and a process cavity, wherein 64 silane gas spray holes are formed in a first sedimentation tank at an inlet of the process cavity, and second, third, fourth, fifth and sixth sedimentation tanks have 22 silane gas spray holes respectively; further, 64 spray holes are formed in the first sedimentation tank at the inlet of the process cavity, 43 spray holes are formed in the second sedimentation tank, and the third, fourth, fifth and sixth sedimentation tanks have 22 spray holes respectively; and furthermore, 64 spray holes are formed in the first sedimentation tank at the inlet of the process cavity, both the second sedimentation tank and the third sedimentation tank have 22 spray holes, 43 spray holes are formed in the fourth sedimentation hole, and both the fifth sedimentation tank and the sixth sedimentation tank have 22 spray holes. The system has a simple and reliable structure; and in the base plate type coating equipment, multistage gradient gas supply can be realized only by changing the number or the aperture differences of the silane gas spray holes in the sedimentation tanks, so that the effect of coating a plurality of films can be achieved, and the conversion efficiency of a solar battery can be further improved.
Description
Technical field
The utility model relates to a kind of gas distributed system of substrate-type filming equipment, especially for the gas distributed system with reactant gases shower and spray apertures of PECVD vacuum moulding machine chamber.
Background technology
Polysilicon solar cell utilizes plasma reinforced chemical vapour deposition (PECVD) technology, continuous plating silicon nitride antireflective coating and be widely used in scale operation on the silicon chip substrate.For homogeneity and the consistence that guarantees sedimentary silicon nitride film in the whole base plate zone; Need to install gas distributed system in the described PECVD system to guarantee the air-flow uniform distribution in the entire reaction zone; This device promptly so-called " shower " and " sedimentation tank "; Silane or ammonia get into special tracheae according to certain flow; Again through having gas " shower " ejection of the aperture that gathers, through microwave energy ammonia is ionized into and forms amorphous silicon nitride films with silane reaction behind the plasma body and be deposited on the silicon chip substrate.At present, the equipment of common coated with antireflection film has only a deposition chambers when design, and number of aperture of sedimentation tank is all identical in it, and promptly the silane of each sedimentation tank is all identical with ammonia flow, can only plate unitary film, and anti-reflective effect is poor.The equipment that uses two deposition chambers plating double layer antireflection coatings is also arranged, the bigger thin film layer of plating specific refractory power in first deposit cavity, the less thin film layer of plating specific refractory power has increased equipment cost and maintenance facilities cost in second deposit cavity.
Present disclosed technical intelligence mainly is: reactant gases is installed or system more uniformly, do not relate to the technical intelligence of using same deposit cavity to reach the effect of plating multilayer film.
The utility model content
The purpose of the utility model is to provide a kind of gas distributed system of substrate-type filming equipment; Improve the performance of gas distributed system; Be implemented in the effect that reaches the plating multilayer film in the same deposit cavity; Improve anti-reflective effect and passivation effect, improve the photoelectric transformation efficiency of polysilicon solar cell, and improve the raw-material utilization ratio of gas.Compare with the filming equipment that plates double-layer reflection-decreasing films with two deposition chambers, practiced thrift equipment cost and raw material consumption.
The technical scheme of the utility model is: a kind of gas distributed system of substrate-type filming equipment; Comprise the sedimentation tank that is arranged in the deposit cavity; Process cavity; 64 silane gas spray apertures wherein are set on first sedimentation tank of process cavity ingress, on second to the 6th sedimentation tank 22 silane gas spray apertures are set all.
Further, on first sedimentation tank of said process cavity ingress 64 silane gas spray apertures are set, 43 silane gas spray apertures are set on second sedimentation tank, on the 3rd to the 6th sedimentation tank 22 silane gas spray apertures are set all.
Further again; On first sedimentation tank of said process cavity ingress 64 silane gas spray apertures are set; 22 silane gas spray apertures all are set on second, third sedimentation tank; 43 silane gas spray apertures are set on the 4th sedimentation tank, 22 silane gas spray apertures all are set on the 5th, the 6th sedimentation tank.
The utility model is having only on the substrate-type filming equipment of a deposition chambers, has only changed silane gas spray apertures number on the sedimentation tank, has realized that the silane airshed successively decreases from more to less; Increase the specific refractory power of silicon chip top layer plated film; And then increased the passivation effect of silicon chip surface, the difference through silane and ammonia flow in half deposit cavity of preceding half deposit cavity and back simultaneously, realization multistage gradient air feed; Reach the effect of plating multilayer antireflection film; Significantly promote the efficiency of conversion of polysilicon solar cell, and improved the raw-material utilization ratio of gas, reduced equipment cost.
Description of drawings
Fig. 1 is the structural representation of the single sedimentation tank of the utility model;
Fig. 2 is the sedimentation tank schematic top plan view of 22 silane gas spray apertures of the utility model;
Fig. 3 is the sedimentation tank schematic top plan view of 43 silane gas spray apertures of the utility model;
Fig. 4 is the sedimentation tank schematic top plan view of 64 silane gas spray apertures of the utility model;
Fig. 5 is the schematic top plan view of first kind of discharging of the utility model sedimentation tank;
Fig. 6 is the schematic top plan view of second kind of discharging of the utility model sedimentation tank;
Fig. 7 is the schematic top plan view of the third discharging sedimentation tank of the utility model;
Among the figure: silane gas spray apertures on the 1-sedimentation tank, the sedimentation tank of 2-64 silane gas spray apertures, the sedimentation tank of 3-22 silane gas spray apertures, the sedimentation tank of 4-43 silane gas spray apertures.
Embodiment
Below in conjunction with accompanying drawing the utility model is done further explain.
In same coated film deposition chamber, increased process cavity ingress silane spray pore quantity, make first sedimentation tank silane air output greater than second and the 3rd sedimentation tank.As shown in Figure 2, be the sedimentation tank of existing installation, 22 silane spray pores are arranged.As shown in Figure 3, be on the sedimentation tank of existing installation, to establish a pore newly in the middle of per two silane spray pore, make silane spray stomatal number reach 43.As shown in Figure 4, be on the sedimentation tank of existing installation, to establish two pores newly in the middle of per two silane spray pore, make silane spray stomatal number reach 64.Under the identical situation of silane atmospheric pressure, the amount of having established the sedimentation tank ejection silane gas of silane spray pore newly also increases.
Like Fig. 5; The gas distributed system of a kind of substrate-type filming equipment that the utility model provides; Comprise the sedimentation tank that is arranged in the deposit cavity; Process cavity is provided with on 1, the second to the 6th sedimentation tank 3 of 64 silane gas spray apertures on first sedimentation tank 2 that wherein process cavity ingress places 22 silane gas spray apertures 1 is set.Add suitable flow matches with such film coating apparatus, can realize the effect of similar trilamellar membrane, improved the specific refractory power of lower membrane simultaneously, increased passivation effect.
Preferably; Like Fig. 6; On first sedimentation tank 2 that the ingress of process cavity places, 64 silane gas spray apertures 1 being set, is to be provided with on second sedimentation tank 4 on 1, the three to the 6th sedimentation tank 3 of 43 silane gas spray apertures 22 silane gas spray apertures 1 all are set then.Add suitable flow matches with such film coating apparatus, when having increased passivation effect, can save the silane consumption.
Preferably; Like Fig. 7; On first sedimentation tank 2 that the ingress of process cavity places, 64 silane gas spray apertures 1 are set; All be provided with on second, third sedimentation tank 3 of then placing to be provided with on 1, the four sedimentation tank 4 of 22 silane gas spray apertures on 43 silane gas spray apertures 1, the five, the 6th sedimentation tank 3 22 silane gas spray apertures 1 all are set.Add suitable flow matches with such film coating apparatus, can realize the coating effects of similar four tunics.
Certainly, those skilled in the art also can change the aperture of silane gas spray apertures on the sedimentation tank, realize the effect that the silane airshed is successively decreased from more to less.In silicon nitride antireflective filming equipment, can also change the spray apertures quantity or the aperture of ammonia on the sedimentation tank, make ammonia increase progressively the coating process of realizing that specific refractory power is successively decreased at sedimentation tank one by one.When the plating reflection enhancing coating, also can reach the effect of the double-deck reflection enhancing coating of plating according to the design opposite with the utility model.
The utility model is simple in structure, reliable; In the substrate-type filming equipment, only, realize the multistage gradient air feed through the quantity of silane gas spray apertures or the difference in aperture on the improvement sedimentation tank; Reach the effect of plating multilayer film, further promote the efficiency of conversion of solar cell.
Certainly; The utility model also can have other various embodiments; Under the situation that does not deviate from the utility model spirit and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the utility model, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the utility model.
Claims (3)
1. the gas distributed system of a substrate-type filming equipment; Comprise the sedimentation tank that is arranged in the deposit cavity; Process cavity; It is characterized in that: 64 silane gas spray apertures (1) are set on first sedimentation tank of process cavity ingress (2), on second to the 6th sedimentation tank (3) 22 silane gas spray apertures (1) are set all.
2. the gas distributed system of substrate-type filming equipment according to claim 1; It is characterized in that: 64 silane gas spray apertures (1) are set on said process cavity first sedimentation tank of ingress (2); 43 silane gas spray apertures (1) are set on second sedimentation tank (4), on the 3rd to the 6th sedimentation tank (3) 22 silane gas spray apertures (1) are set all.
3. the gas distributed system of substrate-type filming equipment according to claim 1; It is characterized in that: 64 silane gas spray apertures (1) are set on said process cavity first sedimentation tank of ingress (2); 22 silane gas spray apertures (1) all are set on second, third sedimentation tank (3); 43 silane gas spray apertures (1) are set on the 4th sedimentation tank (4), 22 silane gas spray apertures (1) all are set on the 5th, the 6th sedimentation tank (3).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201120489286 CN202323022U (en) | 2011-11-30 | 2011-11-30 | Gas distribution system for base plate type coating equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 201120489286 CN202323022U (en) | 2011-11-30 | 2011-11-30 | Gas distribution system for base plate type coating equipment |
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CN202323022U true CN202323022U (en) | 2012-07-11 |
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CN 201120489286 Expired - Fee Related CN202323022U (en) | 2011-11-30 | 2011-11-30 | Gas distribution system for base plate type coating equipment |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111519161A (en) * | 2019-09-29 | 2020-08-11 | 江苏微导纳米科技股份有限公司 | Vacuum coating process chamber and vacuum suspension coating machine with same |
-
2011
- 2011-11-30 CN CN 201120489286 patent/CN202323022U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111519161A (en) * | 2019-09-29 | 2020-08-11 | 江苏微导纳米科技股份有限公司 | Vacuum coating process chamber and vacuum suspension coating machine with same |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120711 Termination date: 20171130 |
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CF01 | Termination of patent right due to non-payment of annual fee |