CN201326014Y - Air intake device for plasma-enhanced chemical vapor deposition (PECVD) - Google Patents
Air intake device for plasma-enhanced chemical vapor deposition (PECVD) Download PDFInfo
- Publication number
- CN201326014Y CN201326014Y CNU2008200730112U CN200820073011U CN201326014Y CN 201326014 Y CN201326014 Y CN 201326014Y CN U2008200730112 U CNU2008200730112 U CN U2008200730112U CN 200820073011 U CN200820073011 U CN 200820073011U CN 201326014 Y CN201326014 Y CN 201326014Y
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- CN
- China
- Prior art keywords
- air intake
- pecvd
- plasma
- chemical vapor
- vapor deposition
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model relates to an air intake device for plasma-enhanced chemical vapor deposition (PECVD) in solar battery production. The device comprises a device main body which adopts a bilateral air intake mode and provided with air inlets on the upper surface and the lower surface. Due to adoption of the structure, the utility model enables the air intake mode of the PECVD device to be changed from the original one-surface air intake into the present bifacial air intake, namely the air intake both on the upper surface and the lower surface, thereby ensuring the uniformity and the deposition effect of the air intake and enabling the formed PIN layer structure to be uniform and steady.
Description
Technical field
The utility model relates to the diffuser in a kind of manufacture of solar cells process, the inhomogeneity diffuser of a kind of specifically raising plasma activated chemical vapour deposition (PECVD).
Background technology
In the manufacture of solar cells process, need on glass substrate, deposit the PIN layer, promptly feed borine, silane, phosphine to PECVD (plasma activated chemical vapour deposition) equipment respectively, in PECVD inside a lot of battery lead plates are arranged, the energising of counter electrode plate, then PECVD device interior gas is ionized, and the boron that ionization goes out, silicon, phosphorus are deposited on respectively and form the PIN knot on the glass substrate, the PIN knot generates electricity according to photovoltaic effect under the effect of illumination.
Need continuous air inlet in the use of PECVD equipment, and require depositional coating even when deposition boron, silicon, phosphorus, form stable PIN structure, so when air inlet, just require gas can try one's best evenly.Existing PECVD equipment is the top air inlet.So when gas motion arrived the bottom, density loss influenced deposition effect.
So, need improve equipment, make the air inlet energy evenly.Guarantee the even of PIN rete, stable.
Summary of the invention
The purpose of this utility model is will provide in a kind of manufacture of solar cells process, can realize that the air inlet of PECVD equipment is even, stablize, thereby guarantee the stable diffuser of sedimentary PIN even film layer.
The purpose of this utility model is achieved in that this device comprises equipment body (PECVD equipment body), and described equipment body adopts the mode of bilateral air inlet, above it and the following air inlet port that all has.
The utility model is owing to adopt said structure, make the intake method of PECVD equipment change present two-sided air inlet into by original one side air inlet, be top and bottom air inlets together, guaranteed the homogeneity and the deposition effect of air inlet, make the PIN layer even structure, stable of formation.
Description of drawings
Fig. 1 is a kind of plasma activated chemical vapour deposition diffuser one-piece construction synoptic diagram.
Embodiment
Shown in accompanying drawing 1: this device comprises equipment body 1 (PECVD equipment body), and described equipment body 1 adopts the mode of bilateral air inlet, above it and the following air inlet port 2 that all has.
Claims (1)
1, a kind of plasma activated chemical vapour deposition diffuser, this device comprises equipment body (1), it is characterized in that: described equipment body (1) adopts the mode of bilateral air inlet, above it and the following air inlet port (2) that all has.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200730112U CN201326014Y (en) | 2008-12-30 | 2008-12-30 | Air intake device for plasma-enhanced chemical vapor deposition (PECVD) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2008200730112U CN201326014Y (en) | 2008-12-30 | 2008-12-30 | Air intake device for plasma-enhanced chemical vapor deposition (PECVD) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201326014Y true CN201326014Y (en) | 2009-10-14 |
Family
ID=41177990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2008200730112U Expired - Lifetime CN201326014Y (en) | 2008-12-30 | 2008-12-30 | Air intake device for plasma-enhanced chemical vapor deposition (PECVD) |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201326014Y (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021537A (en) * | 2010-06-11 | 2011-04-20 | 福建钧石能源有限公司 | Thin film deposition equipment |
| CN102080220A (en) * | 2011-02-28 | 2011-06-01 | 福建钧石能源有限公司 | Low-pressure chemical vapor deposition reaction equipment |
| CN102286729A (en) * | 2010-06-17 | 2011-12-21 | 亚洲太阳科技有限公司 | Single-chamber multi-slide-glass ion growth type chemical vapor deposition device |
| CN102634774A (en) * | 2012-05-05 | 2012-08-15 | 云南师范大学 | Method for preparing amorphous silicon germanium thin-film batteries with box type PECVD (plasma enhanced chemical vapor deposition) equipment |
-
2008
- 2008-12-30 CN CNU2008200730112U patent/CN201326014Y/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102021537A (en) * | 2010-06-11 | 2011-04-20 | 福建钧石能源有限公司 | Thin film deposition equipment |
| CN102286729A (en) * | 2010-06-17 | 2011-12-21 | 亚洲太阳科技有限公司 | Single-chamber multi-slide-glass ion growth type chemical vapor deposition device |
| CN102080220A (en) * | 2011-02-28 | 2011-06-01 | 福建钧石能源有限公司 | Low-pressure chemical vapor deposition reaction equipment |
| CN102634774A (en) * | 2012-05-05 | 2012-08-15 | 云南师范大学 | Method for preparing amorphous silicon germanium thin-film batteries with box type PECVD (plasma enhanced chemical vapor deposition) equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20091014 |