CN201495314U - Gas distribution device for thin film deposition device - Google Patents
Gas distribution device for thin film deposition device Download PDFInfo
- Publication number
- CN201495314U CN201495314U CN2009201444381U CN200920144438U CN201495314U CN 201495314 U CN201495314 U CN 201495314U CN 2009201444381 U CN2009201444381 U CN 2009201444381U CN 200920144438 U CN200920144438 U CN 200920144438U CN 201495314 U CN201495314 U CN 201495314U
- Authority
- CN
- China
- Prior art keywords
- inlet mouth
- gas
- distribution device
- pipe line
- gas pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses a gas distribution device for a thin film deposition device. The gas distribution device comprises a gas inlet and a gas delivery pipeline, wherein a plurality of gas outlets are formed on the gas delivery pipeline, the aperture of each gas outlet is gradually increased along the gas inlet from near to far, and/or the density of each gas outlet is gradually increased along the gas inlet from near to far. The gas distribution device for the thin film deposition device can remarkably improve the uniformity of gas distribution in the reaction tank.
Description
Technical field
The utility model relates to the photovoltaic solar cell technical field, particularly a kind of distribution device of film deposition equipment.
Background technology
Along with the worsening shortages of the energy, people pay attention to day by day to the development and utilization of sun power.Market is to more big area, the demand lighter and thinner and novel solar battery that production cost is lower increase day by day.In these novel solar batteries, be subjected to worldwide extensive concern based on the exploitation of the thin-film solar cells of silicon materials, particularly large area film solar cell.Thin-film solar cells is few with the silicon amount, easier reducing cost, and under the situation of silicon material constant tension, thin film solar cell has become the new trend and the new focus of solar cell development.
Thin-film solar cells is a multilayer device; as shown in Figure 1; the p-i-n rhythmo structure that typical thin-film solar cells generally includes electrode 11 before glass substrate 10, the electrically conducting transparent, is made up of p layer 12, i layer 13 and n layer 14, and back electrode 15 and carry on the back protecting sheet 16.Wherein p layer 12, i layer 13 and n layer 14 are respectively p type doping film silicon layer, i type (membrane silicon layer of non-doping or intrinsic) and n type doping film silicon layer.P layer 12 and n layer 14 are set up an internal electric field between i layer 13, i layer 13 converts incident optical energy to electric energy.Three layers of combination of this p-i-n are called a photovoltaic element, or one " knot ".The unijunction thin-film solar cells contains single photovoltaic element, and the multi-knot thin film solar cell contains the photovoltaic element that two or more are superimposed and closely link to each other.
Each layer of large area film solar cell p-i-n rhythmo structure is to utilize plasma enhanced chemical vapor deposition (PECVD) technology, formation of deposits in large-scale PECVD depositing device, be described in 200820008274.5 the Chinese patent application for example at application number, can be on the large-area substrates surface, the large-scale PECVD depositing device of batch deposition film.Fig. 2 is this simplified equipment structural representation, and as shown in Figure 2, in the thin film deposition zone of reaction chamber 110, be alternately to place big area exciting electrode plate and grounding electrode plate at interval in the reaction compartment 120, its both side surface all can be placed large-area glass substrate 121.Reactant gases enters a permitted gas space by inlet mouth 102, enters into deposition region 120 again through the even shower plate 106 that gathers through hole.Reactant gases flows along the direction of arrow, and RF excited power supply 108 provides radio-frequency (RF) energy to the exciting electrode plate, is plasma body with reactant gases ionization, thereby at substrate 121 surface deposition films, remaining gas is discharged by air outlet 106.
Usually be provided with distribution device in above-mentioned permitted gas space, this distribution device places the top of shower plate 106.Fig. 3 is the reaction box perspective view, and Fig. 4 is the vertical view of the existing distribution device structure of explanation.Please refer to Fig. 3 and shown in Figure 4, shower plate 106 evenly is densely covered with through hole 105, and reactant gases enters deposition region 120 by these through holes.Existing distribution device 130 is positioned at the top of shower plate 106, comprises inlet mouth 102, gas pipe line 131 and 132.Be evenly distributed with production well 140 at gas pipe line 131 and 132 sides towards through hole 105.In the gas transmission process, reactant gases enters gas pipe line 131 and 132 from inlet mouth 102, flows along the direction of arrow, flows out through production well 140, and the through hole on shower plate 106 105 enters the deposition region again.But, in this process, be introduced into pipeline 131 and 132 gas some at first discharge from the nearer production wells of distance inlet mouth 102, follow-up continuation mobile gas can be discharged from distance inlet mouth 102 production wells far away, this makes shower plate 106 tops will be higher than from the gas concentration of inlet mouth 102 than the territory, far field from the gas concentration of inlet mouth 102 immediate area, cause in permitted gas space gas distribution inhomogeneous, it is also inhomogeneous to make via through holes 105 enter the reacting gas concentration of deposition region, the heterogeneity that causes glass baseplate surface thin film deposition in the reaction box influences the performance of thin-film solar cells.
The utility model content
The purpose of this utility model is to provide a kind of distribution device of film deposition equipment, can significantly improve the homogeneity of gas distribution in the reaction box.
On the one hand, the utility model provides a kind of distribution device of film deposition equipment, comprises inlet mouth and gas pipe line, and described gas pipe line is provided with a plurality of production wells, and by nearly extremely direction far away, the aperture of described production well increases gradually along the described inlet mouth of distance.
Preferably, the area summation of described a plurality of production wells is less than the area of described inlet mouth.
On the other hand, the utility model provides a kind of distribution device of film deposition equipment, comprises inlet mouth and gas pipe line, and described gas pipe line is provided with a plurality of production wells, by nearly extremely direction far away, the density of described production well increases gradually along the described inlet mouth of distance.
Preferably, the aperture of described a plurality of production wells is identical, and the area summation of described a plurality of production wells is less than the area of described inlet mouth.
On the one hand, the utility model provides a kind of distribution device of film deposition equipment, comprises inlet mouth and gas pipe line again, described gas pipe line is provided with a plurality of production wells, by nearly extremely direction far away, the aperture of described production well increases gradually along the described inlet mouth of distance, and/or
By nearly extremely direction far away, the density of described production well increases gradually along the described inlet mouth of distance.
Preferably, the area summation of described a plurality of production wells is less than the area of described inlet mouth.
Compared with prior art, the utlity model has following advantage:
Distribution device of the present utility model along gas pipe line with the mode heterogeneous production well that distributes, promptly along increasing the aperture of production well gradually and/or increase the density of production well gradually to direction far away by near apart from inlet mouth.This makes in intake process, can there be more reactant gases to enter into the zone far away, shower plate top apart from inlet mouth, make shower plate top permitted gas space reaction gases distribute more even, thereby make the reacting gas concentration that enters the deposition region more even, improved the homogeneity of gas distribution in the reaction box.
Description of drawings
By the more specifically explanation of the preferred embodiment of the present utility model shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present utility model will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present utility model.In the accompanying drawings, for clarity sake, amplified the thickness of layer.
Fig. 1 is a thin-film solar cells typical structure synoptic diagram;
Fig. 2 is large-scale PECVD depositing device simplified construction synoptic diagram;
Fig. 3 is a reaction box three-dimensional arrangement rough schematic view;
Fig. 4 is the vertical view of the existing distribution device structure of explanation;
Fig. 5 a to Fig. 5 b is the distribution device structural representation according to the utility model first embodiment;
Fig. 6 a to Fig. 6 b is the distribution device structural representation according to the utility model second embodiment;
Fig. 7 is the distribution device structural representation according to the utility model the 3rd embodiment;
Fig. 8 is the distribution device structural representation according to the utility model the 4th embodiment.
Described diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection domain of the present utility model at this.
Embodiment
For above-mentioned purpose of the present utility model, feature and advantage can be become apparent more, embodiment of the present utility model is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the utility model.But the utility model can be implemented much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of the utility model intension.Therefore the utility model is not subjected to the restriction of following public concrete enforcement.
Fig. 5 a to Fig. 5 b is the distribution device structural representation according to the utility model first embodiment.At first shown in Fig. 5 a,, be positioned at shower plate 106 tops, comprise inlet mouth 102, gas pipe line 231 and 232 according to the distribution device 230 of the utility model first embodiment.In a side of the through hole 105 of described gas pipe line 231 and 232 on shower plate 106, be disposed with production well 240,241,242 and 243 along the direction of reactant gas flow shown in the arrow.For for simplicity, only show 4 production wells among the figure, mainly be in order to say something, and the quantity of production well can be determined as required flexibly in the middle of actual.Therefore 4 production wells 240,241,242 of present embodiment and 243 can not be as the foundation of restriction the utility model protection domain.
In the present embodiment, production well 240,241,242 on the gas pipe line 231 and 232 and 243 is along distributing apart from inlet mouth 102 direction from the close-by examples to those far off, and along the reactant gas flow direction shown in gas pipe line 231 and the 232 interior arrows, production well 240,241,242 and 243 aperture increase gradually, shown in Fig. 5 b.In other words, far away more from inlet mouth 102 in all production wells of gas pipe line 231 and 232, the aperture of production well is big more.Wherein, the area summation of all production wells (240,241,242 and 243) makes reactant gases fully mobile less than the area of inlet mouth 102 to guarantee producing pressure reduction.In the reactant gas flow process, because big more, more reaction gas is known from experience flow into from inlet mouth 102 permitted gas space far away from the aperture of inlet mouth 102 production well far away more.Compare with the equally distributed situation of all production wells, it is more even that distribution device of the present utility model can make shower plate top permitted gas space reaction gases distribute, thereby make the reactant gases that flow in the reaction box more even.
Fig. 6 a to Fig. 6 b is the distribution device structural representation according to the utility model second embodiment.At first shown in Fig. 6 a, be positioned at the top of shower plate 106 according to the distribution device 330 of the utility model second embodiment, comprise inlet mouth 102, gas pipe line 331 and 332.In a side of described gas pipe line 331 and 332 through hole 105 on shower plate 106, a plurality of production wells 340 are set along the direction of reactant gas flow shown in the arrow.The quantity of production well 340 can be determined according to actual needs flexibly.In the present embodiment, production well 340 edges distribute apart from inlet mouth 102 direction from the close-by examples to those far off, and along the reactant gas flow direction shown in the arrow, the density of production well 340 increases gradually, shown in Fig. 5 b.In other words, far away more from inlet mouth 102 in all production wells, the density of production well is big more.Wherein, the aperture of all production wells can be identical, in other embodiments, also can resemble described in the previous embodiment, and along gas flow direction shown in the arrow, the aperture of production well increases gradually.The area summation of all production wells is less than the area of inlet mouth 102, so that produce pressure reduction reactant gases can be flowed fully.In the reactant gas flow process, because far away more from inlet mouth 102, the density of production well is big more, thereby has more reactant gases and flow in the permitted gas space of inlet mouth 102 shower plate 106 tops far away.Therefore, compare with the equally distributed situation of all production wells, it is more even that distribution device of the present utility model can make shower plate top permitted gas space reaction gases distribute, thereby make the reactant gases that flow in the reaction box more even.
Fig. 7 is the distribution device structural representation according to the utility model the 3rd embodiment.As shown in Figure 7, be positioned at shower plate 106 tops, comprise inlet mouth 102, gas pipe line 431 and 432 according to the distribution device 430 of the utility model the 3rd embodiment.Both sides in described gas pipe line 431 and 432 are disposed with production well 440,441,442 and 443 along the gas flow direction shown in the arrow in the pipeline, and 440 ', 441 ' and 442 '.For for simplicity, gas pipe line 431 and 432 inboard only show 4 production wells among the figure, and the outside only shows 3 production wells, mainly be in order to say something, and the quantity of production well can be determined as required flexibly in the middle of actual.Therefore the pore number that illustrates of present embodiment can not be as the foundation of restriction the utility model protection domain.In the present embodiment, inboard production well 440,441,442 and 443 is along distributing apart from inlet mouth 102 direction from the close-by examples to those far off on the gas pipe line 431 and 432, and the gas flow direction aperture shown in the arrow increases gradually in the pipeline.Also along distributing apart from inlet mouth 102 direction from the close-by examples to those far off, and the gas flow direction aperture shown in the arrow increases gradually in the pipeline at the production well 440 ', 441 ' and 442 ' in the gas pipe line 431 and 432 outsides.That is to say that far away more from inlet mouth 102 in all production wells of gas pipe line 431 and 432, the aperture of production well is big more.In other embodiments, the production well 440 ' in the gas pipe line 431 and 432 outsides, 441 ' with 442 ' aperture also can be identical.Wherein, the area summation of all production wells is less than the area of inlet mouth 102, to guarantee that producing pressure reduction flows reactant gases fully.
In the reactant gas flow process, because big more from the aperture of inlet mouth 102 production well far away more, more reaction gas is known from experience and is flow into from inlet mouth 102 permitted gas space far away.And owing to increased the production well 440 ', 441 ' and 442 ' in the outside, reactant gases can enter the permitted gas space of shower plate 106 tops from the both sides of gas pipe line 431 and 432, from a plurality of directions, can make the distribution of shower plate 106 top permitted gas space reaction gases more even, and then make the reactant gases that flow in the reaction box more even.
In other embodiments, the aperture of the production well of gas pipe line inboard can be identical, and the production well in the outside is far away more from inlet mouth, and the aperture is big more.
Fig. 8 is the distribution device structural representation according to the utility model the 4th embodiment.As shown in Figure 8, be positioned at the top of shower plate 106, comprise inlet mouth 102, gas pipe line 531 and 532 according to the distribution device 530 of the utility model the 4th embodiment.Both sides in described gas pipe line 531 and 532 are provided with a plurality of production wells 540 along the reactant gas flow direction shown in the arrow in the pipeline.The quantity of production well 540 can be determined according to actual needs flexibly.In the present embodiment, production well 540 edges distribute apart from inlet mouth 102 direction from the close-by examples to those far off, and along the reactant gas flow direction shown in gas pipe line 531 and the 532 interior arrows, the density of the production well 540 of gas pipe line 531 and 532 inboards increases gradually.In other words, far away more from inlet mouth 102, the density of production well 540 is big more.
In other embodiments, the production well 540 ' in the gas pipe line 531 and 532 outsides promptly can be big more from inlet mouth 102 density far away more, also can uniform distribution.
In the present embodiment, the aperture of all production wells can be identical.In other embodiments, also can resemble described in the previous embodiment, along gas flow direction shown in the arrow, the aperture of production well increases gradually.The area summation of all production wells is less than the area of inlet mouth 102, so that produce pressure reduction reactant gases is flowed fully.In the reactant gas flow process, because far away more from inlet mouth 102, the density of production well is big more, has more reactant gases and flows in the permitted gas space of inlet mouth 102 shower plate 106 tops far away.And because reactant gases can flow into the permitted gas space of shower plate 106 tops from the both sides of gas pipe line 531 and 532, from a plurality of directions, therefore, it is more even that distribution device of the present utility model can make shower plate top permitted gas space reaction gases distribute, and then make the reactant gases that flow in the reaction box more even.
In other embodiments, the production well of gas pipe line 531 and 532 inboards can be a uniform distribution, and the production well in the outside is big more from inlet mouth 102 density far away more.
The above only is preferred embodiment of the present utility model, is not the utility model is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solutions of the utility model scope situation, all can utilize the technology contents of above-mentioned announcement that technical solutions of the utility model are made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solutions of the utility model, all still belongs in the protection domain of technical solutions of the utility model any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present utility model.
Claims (6)
1. the distribution device of a film deposition equipment comprises inlet mouth and gas pipe line, and described gas pipe line is provided with a plurality of production wells, it is characterized in that:
By nearly extremely direction far away, the aperture of described production well increases gradually along the described inlet mouth of distance.
2. distribution device as claimed in claim 1 is characterized in that: the area summation of described a plurality of production wells is less than the area of described inlet mouth.
3. the distribution device of a film deposition equipment comprises inlet mouth and gas pipe line, and described gas pipe line is provided with a plurality of production wells, it is characterized in that:
By nearly extremely direction far away, the density of described production well increases gradually along the described inlet mouth of distance.
4. distribution device as claimed in claim 3 is characterized in that: the aperture of described a plurality of production wells is identical, and the area summation of described a plurality of production wells is less than the area of described inlet mouth.
5. the distribution device of a film deposition equipment comprises inlet mouth and gas pipe line, and described gas pipe line is provided with a plurality of production wells, it is characterized in that:
By nearly extremely direction far away, the aperture of described production well increases gradually along the described inlet mouth of distance, and/or
By nearly extremely direction far away, the density of described production well increases gradually along the described inlet mouth of distance.
6. distribution device as claimed in claim 5 is characterized in that: the area summation of described a plurality of production wells is less than the area of described inlet mouth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201444381U CN201495314U (en) | 2009-02-23 | 2009-02-23 | Gas distribution device for thin film deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009201444381U CN201495314U (en) | 2009-02-23 | 2009-02-23 | Gas distribution device for thin film deposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201495314U true CN201495314U (en) | 2010-06-02 |
Family
ID=42438522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009201444381U Expired - Fee Related CN201495314U (en) | 2009-02-23 | 2009-02-23 | Gas distribution device for thin film deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201495314U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477545A (en) * | 2010-11-23 | 2012-05-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device and plasma chemical vapor deposition apparatus therewith |
| CN111228838A (en) * | 2020-01-19 | 2020-06-05 | 广州中环万代环境工程有限公司 | Tray type air distribution device |
| CN112941492A (en) * | 2021-01-19 | 2021-06-11 | 华中科技大学 | Atomic layer deposition apparatus and method |
| CN113373430A (en) * | 2021-05-21 | 2021-09-10 | 江苏鹏举半导体设备技术有限公司 | Atomic layer deposition apparatus |
-
2009
- 2009-02-23 CN CN2009201444381U patent/CN201495314U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102477545A (en) * | 2010-11-23 | 2012-05-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device and plasma chemical vapor deposition apparatus therewith |
| CN102477545B (en) * | 2010-11-23 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas inlet device and plasma chemical vapor deposition apparatus therewith |
| CN111228838A (en) * | 2020-01-19 | 2020-06-05 | 广州中环万代环境工程有限公司 | Tray type air distribution device |
| CN112941492A (en) * | 2021-01-19 | 2021-06-11 | 华中科技大学 | Atomic layer deposition apparatus and method |
| CN112941492B (en) * | 2021-01-19 | 2022-06-03 | 华中科技大学 | Atomic layer deposition apparatus and method |
| CN113373430A (en) * | 2021-05-21 | 2021-09-10 | 江苏鹏举半导体设备技术有限公司 | Atomic layer deposition apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101609858B (en) | Film deposition method | |
| CN201183822Y (en) | Thin film deposition apparatus | |
| CN101322251B (en) | Method and apparatus for depositing a microcrystalline silicon film for photovoltaic device | |
| CN102446991B (en) | Film solar battery based on crystalline silicon and manufacturing method thereof | |
| CN201495314U (en) | Gas distribution device for thin film deposition device | |
| US20120108002A1 (en) | Apparatus, method and system for depositing layer of solar cell | |
| KR20100093347A (en) | Solar cell, method for manufacturing of solar cell and apparatus for manufacturing of solar cell, method for deposition of thin film layer | |
| CN101265573B (en) | Thin film deposition method | |
| CN102094189A (en) | Chemical vapor deposition reaction equipment | |
| CN102656707B (en) | Thin-film silicon tandem solar cell and method for manufacturing the same | |
| CN102021537A (en) | Thin film deposition equipment | |
| CN102148330A (en) | Method for manufacturing flexible photoelectric device | |
| CN201326014Y (en) | Air intake device for plasma-enhanced chemical vapor deposition (PECVD) | |
| CN102064236B (en) | Manufacture method of thin-film solar cell | |
| CN201758113U (en) | Film deposition device | |
| CN201549466U (en) | Thin film deposition device | |
| CN103132054B (en) | Plasma processing apparatus | |
| CN101775591A (en) | Method for depositing film | |
| CN201990728U (en) | Low-pressure chemical vapor deposition reaction equipment | |
| CN201562657U (en) | Thin film deposition device | |
| CN101294277B (en) | Thin film deposition method | |
| CN102024676A (en) | Method for manufacturing semiconductor device in single-chamber reactor | |
| CN101964379B (en) | Thin film solar cell template current density compensation method | |
| CN102064212A (en) | Amorphous silicon film solar cell and preparation method thereof | |
| CN102437204A (en) | Film photovoltaic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: BEIJING JINGCHENG APOLLO OPTOELECTRONICS EQUIPMENT |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20110727 Address after: 362000 Jiangnan hi tech Zone, South Ring Road, Licheng District, Fujian, Quanzhou Co-patentee after: Beijing Jingcheng Boyang Optoelectronic Equipment Co.,Ltd. Patentee after: Fujian Golden Sun Solar Technic Co., Ltd. Address before: 362000 Jiangnan hi tech Zone, No. 1303 South Ring Road, Licheng District, Quanzhou, Fujian Patentee before: Fujian Golden Sun Solar Technic Co., Ltd. |
|
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100602 Termination date: 20140223 |