CN113373430A - Atomic layer deposition apparatus - Google Patents
Atomic layer deposition apparatus Download PDFInfo
- Publication number
- CN113373430A CN113373430A CN202110559693.8A CN202110559693A CN113373430A CN 113373430 A CN113373430 A CN 113373430A CN 202110559693 A CN202110559693 A CN 202110559693A CN 113373430 A CN113373430 A CN 113373430A
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- gas
- cavity
- atomic layer
- layer deposition
- deposition apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application discloses atomic layer deposition device, including last cavity, lower cavity, gas flow distribution plate, tray and heating device, go up cavity lid and fit cavity down, go up the cavity and be equipped with the intake pipe, the gas flow distribution plate sets up in last cavity, gas flow distribution plate and intake pipe intercommunication, tray and heating device set up in cavity down, and gas flow distribution plate radially distributes all around from the center has a plurality of ventholes. From this, set up a plurality ofly through the gas outlet with on the gas flow distribution plate, and along radial distribution, form the spider-web type structure, every round venthole quantity is the same, be close to edge all around more, the distance of two adjacent ventholes is more far away on each circle, so can set up bigger being close to the aperture of the venthole of edge all around more, can solve the pressure of giving vent to anger that is close to the venthole of center department more greatly, precursor diffusion inhomogeneous problem, can make the precursor diffusion more even, improve the lamination efficiency, promote the quality of product.
Description
Technical Field
The invention relates to the field of atomic layer deposition, in particular to an atomic layer deposition device.
Background
Recently, as the integration degree of semiconductor units becomes higher and higher in semiconductor engineering, the demand for microfabrication also becomes higher and higher. In order to form a fine pattern and enable high integration of a plurality of cells on one chip, it is necessary to develop a new substance having a thin film with a small thickness and a high dielectric constant. In particular, when a step is formed on a substrate, it is critical to ensure step coverage and within-wafer uniformity of the covered surface. In order to satisfy the above requirements, an atomic layer deposition method (ALD) of forming a thin film having a fine thickness per atomic layer unit is being applied and developed.
The ALD process is a method of forming a monoatomic layer using chemisorption and desorption occurring by a surface saturation reaction of a reactant on a substrate surface, and is also a thin film deposition method in which a thickness at an atomic layer level can be controlled.
Step coverage and within-wafer uniformity in existing ALD processes may be determined by a number of factors, but with a tighter relationship to the shape of the showerhead.
In the current market, the air inlet mode is a single air inlet or a plurality of air inlets, and after the air carrier source enters the cavity, the diffusion is uneven, so that the deposition of the substrate sample is uneven.
Disclosure of Invention
It is an object of the present invention to provide an atomic layer deposition apparatus solving one or more of the above mentioned problems of the prior art.
According to one aspect of the invention, an atomic layer deposition device is provided, which comprises an upper cavity, a lower cavity, a gas distribution plate, a tray and a heating device, wherein the upper cavity covers the lower cavity, the upper cavity is provided with a gas inlet pipe, the gas distribution plate is arranged in the upper cavity and is communicated with the gas inlet pipe, the tray and the heating device are arranged in the lower cavity, and the gas distribution plate is radially provided with a plurality of gas outlet holes from the center to the periphery.
From this, set up a plurality ofly through the gas outlet with on the gas flow distribution plate, and along radial distribution, form the spider-web type structure, every round venthole quantity is the same, be close to edge all around more, each circles the distance of two adjacent ventholes more far away, so can set up bigger with the aperture of the venthole that is close to edge all around more, it is bigger to be close to the venthole's of center department when arranging more traditional venthole array, precursor diffusion inhomogeneous problem, can realize making the precursor diffusion more even, improve the lamination efficiency, promote the technological effect of the quality of product.
In some embodiments: the gas inlet pipe comprises a first precursor gas inlet pipe, a second precursor gas inlet pipe and a gas inlet manifold, the first precursor gas inlet pipe and the second precursor gas inlet pipe are respectively communicated with the gas inlet manifold, and the gas inlet manifold is communicated with the gas splitter plate. Thereby, the first precursor and the second precursor can be alternately input.
In some embodiments: the side of the upper cavity body is provided with a mounting groove, the gas distribution plate is arranged in the mounting groove, and the outlet of the gas inlet pipe is arranged at the center of the mounting groove.
In some embodiments: the gas splitter plate is equipped with a plurality of radial air flues towards a side ring of intake pipe, and every radial air flue all follows the radial setting of gas splitter plate, and assembles in the center department of gas splitter plate, and the equipartition has a plurality of ventholes on every radial air flue. Therefore, the precursor can be input into each gas outlet from the center and uniformly output from each gas outlet.
In some embodiments: the gas splitter plate is provided with a plurality of annular gas passages with gradually increased diameters, the annular gas passages are intersected with the radial gas passages, and the gas outlet holes are formed in the intersection points of the annular gas passages and the radial gas passages. Therefore, the air outlets are communicated with each other, and the precursor output from the air inlet pipe can be input into each air outlet more uniformly and smoothly.
In some embodiments: the diameter of the air outlet hole is gradually increased from the center to the outside. Therefore, the precursor can be diffused more uniformly, the lamination efficiency is improved, and the product quality is improved.
In some embodiments: still include tray seat, the tray passes through tray seat and sets up in cavity down. Thereby, the tray can carry the substrate.
In some embodiments: heating device sets up in the tray below, and heating device includes heating plate, electric heating wire and heating plate apron, and electric heating wire sets up in the heating plate downside, and heating plate apron lid closes with the heating plate downside. This enables heating and promotes the atomic layer deposition reaction.
In some embodiments: the distance that the precursor flows from the center of the gas distribution plate to the outlet end face of each gas outlet hole is the same. Therefore, the precursor is prevented from coming out from the gas outlets close to the center and then coming out from the periphery, the precursor is output from each gas outlet at the same time, the precursor is uniformly diffused, and the product quality is improved.
Drawings
FIG. 1 is a schematic structural diagram of an atomic layer deposition apparatus according to the present invention.
FIG. 2 is a schematic structural diagram of a gas distribution plate of an atomic layer deposition apparatus according to a first embodiment of the present invention;
FIG. 3 is a schematic view of the structure of the gas outlet of the gas splitter plate of the atomic layer deposition apparatus according to the present invention;
FIG. 4 is a schematic diagram of an upper chamber of an atomic layer deposition apparatus according to the present invention;
FIG. 5 is a schematic structural view of a gas distribution plate of an atomic layer deposition apparatus according to a second embodiment of the present invention;
Detailed Description
The present invention will be described in further detail with reference to the following description of the drawings.
As shown in fig. 1-4, the atomic layer deposition apparatus includes an upper chamber 1, a lower chamber 2, a gas distribution plate 3, a tray 4 and a heating device 5, wherein the upper chamber 1 covers the lower chamber 2, that is, the upper chamber 1 is a cover body, the lower chamber is a main body, and the upper chamber 1 may further be provided with an upper chamber cover 12, which can protect the upper chamber. An air inlet pipe 6 is arranged in the upper cavity 1, the gas distribution plate 3 is communicated with the air inlet pipe 6, a precursor is input from the air inlet pipe 6, and the gas distribution plate 3 is radially distributed with a plurality of air outlet holes 31 from the center to the periphery and is uniformly diffused through the gas distribution plate 3. Tray 4 and heating device 5 set up in cavity 2 down, and tray 4 is used for placing the base member, and heating device 5 is used for providing the temperature for atomic layer deposition.
The gas inlet pipe 6 comprises a first precursor gas inlet pipe 61, a second precursor gas inlet pipe 62 and a gas inlet manifold 63, the first precursor gas inlet pipe 61 and the second precursor gas inlet pipe 62 are respectively communicated with the gas inlet manifold 63, the gas inlet manifold 63 is communicated with the gas splitter plate 3, the first precursor gas inlet pipe 61 and the second precursor gas inlet pipe 62 are both arranged in the upper cavity 1 and are parallel to the side face of the upper cavity 1, an included angle is formed between the first precursor gas inlet pipe 61 and the second precursor gas inlet pipe 62, and gas inlets of the first precursor gas inlet pipe 61 and the second precursor gas inlet pipe 62 are both arranged on the side edge of the upper cavity 1.
Go up cavity 1 side and be equipped with mounting groove 11, gas flow distribution plate 3 is fixed to be set up in mounting groove 11, and inlet manifold 63 is fixed to be located mounting groove 11 center department.
The gas splitter plate 3 has seted up 18 radial air flues 32 towards a side ring of intake pipe 6, and every radial air flue 32 all follows the radial setting of gas splitter plate 3, and assembles in the center department of gas splitter plate 3, and the equipartition has 9 ventholes 31 on every radial air flue 32.
The gas splitter plate 3 is further provided with 9 annular gas passages 33 with gradually increased diameters, the annular gas passages 33 are intersected with the radial gas passages 32, and the gas outlet holes 31 are formed in the intersection points of the annular gas passages 33 and the radial gas passages 32. Therefore, the air outlets are communicated with each other, and the precursor output from the air inlet pipe can be input into each air outlet more uniformly and smoothly.
The diameter of the air outlet 31 is gradually increased from the center to the outside. Therefore, the precursor can be diffused more uniformly, the lamination efficiency is improved, and the product quality is improved.
Still include tray seat 41, tray 4 passes through tray seat 41 and fixes the setting in cavity 2 down.
Heating device 5 sets up in tray 4 below, and heating device 5 includes heating plate 51, electric heating wire 52 and heating plate apron 53, and electric heating wire 52 fixed mounting is in heating plate 51 downside, and heating plate apron 53 lid closes and heating plate 51 downside, and electric heating wire 52 is located between heating plate apron 53 and the heating plate 51.
In still another embodiment, as shown in fig. 5, the distance from the center of the gas splitter plate 3 to the outlet end face of each gas outlet 31 is the same, that is, the gas splitter plate 3 is a conical structure, the mounting groove 11 of the upper chamber 1 is a corresponding conical structure, and in order to make the distance from the center of the gas splitter plate 3 to the outlet end face of each gas outlet 31 be the same, the gas outlets closer to the center are arc-shaped structures 31 around the axial direction of the gas splitter plate 3, and the radian is larger closer to the center. Therefore, the problem of uneven diffusion caused by the fact that the precursor firstly comes out from the gas outlets close to the center and then comes out from the periphery is solved, the precursor is output from each gas outlet simultaneously, the precursor is uniformly diffused, and the product quality is improved.
In summary, the gas outlets on the gas splitter plate are arranged in a plurality and distributed along the radial direction to form a spider-web structure, the number of the gas outlets in each circle is the same, the closer to the peripheral edge, the farther the distance between two adjacent gas outlets in each circle is, so that the pore diameter of the gas outlets closer to the peripheral edge can be set larger, the problems that the gas outlet pressure of the gas outlets closer to the center is higher and the diffusion of the precursor is uneven can be solved, the diffusion of the precursor is more uniform, the lamination efficiency is improved, and the product quality is improved.
The above is only one embodiment of the present invention, and it should be noted that, for those skilled in the art, several similar modifications and improvements can be made without departing from the inventive concept of the present invention, and these should also be considered as within the protection scope of the present invention.
Claims (9)
1. Atomic layer deposition apparatus, its characterized in that: including last cavity (1), lower cavity (2), gas splitter plate (3), tray (4) and heating device (5), it fits to go up cavity (1) lid cavity (2) down, it is equipped with intake pipe (6) to go up cavity (1), gas splitter plate (3) set up in go up cavity (1), gas splitter plate (3) with intake pipe (6) intercommunication, tray (4) and heating device (5) set up in cavity (2) down, gas splitter plate (3) radially distribute around to from the center have a plurality of ventholes (31).
2. The atomic layer deposition apparatus according to claim 1, wherein: the gas inlet pipe (6) comprises a first precursor gas inlet pipe (61), a second precursor gas inlet pipe (62) and a gas inlet manifold (63), the first precursor gas inlet pipe (61) and the second precursor gas inlet pipe (62) are respectively communicated with the gas inlet manifold (63), and the gas inlet manifold (63) is communicated with the gas splitter plate (3).
3. The atomic layer deposition apparatus according to claim 1, wherein: go up cavity (1) side and be equipped with mounting groove (11), gas flow distribution plate (3) set up in mounting groove (11), intake pipe (6) export is located mounting groove (11) center department.
4. The atomic layer deposition apparatus according to claim 1, wherein: gas splitter plate (3) orientation a side ring of intake pipe (6) is equipped with a plurality of radial air flues (32), and every radial air flue (32) all along the radial setting of gas splitter plate (3), and the center department at gas splitter plate (3) assembles, and the equipartition is equipped with a plurality ofly on every radial air flue (32) venthole (31).
5. The atomic layer deposition apparatus according to claim 4, wherein: the gas splitter plate (3) is provided with a plurality of annular gas passages (33) with gradually-increased diameters, the annular gas passages (33) are intersected with the radial gas passages (32), and the gas outlet holes (31) are formed in the intersection points of the annular gas passages (33) and the radial gas passages (32).
6. The atomic layer deposition apparatus according to claim 1, wherein: the diameter of the air outlet hole (31) is gradually increased from the center to the outside.
7. The atomic layer deposition apparatus according to claim 1, wherein: still include tray seat (41), tray (4) pass through tray seat (41) set up in lower cavity (2).
8. The atomic layer deposition apparatus according to claim 1, wherein: heating device (5) set up in tray (4) below, heating device (5) include heating plate (51), electric heating wire (52) and heating plate apron (53), electric heating wire (52) set up in heating plate (51) downside, heating plate apron (53) lid close with heating plate (51) downside.
9. The atomic layer deposition apparatus according to claim 4, wherein: the distance from the center of the gas distribution plate (3) to the outlet end face of each gas outlet hole (31) is the same.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110559693.8A CN113373430A (en) | 2021-05-21 | 2021-05-21 | Atomic layer deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110559693.8A CN113373430A (en) | 2021-05-21 | 2021-05-21 | Atomic layer deposition apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN113373430A true CN113373430A (en) | 2021-09-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110559693.8A Pending CN113373430A (en) | 2021-05-21 | 2021-05-21 | Atomic layer deposition apparatus |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113897593A (en) * | 2021-09-13 | 2022-01-07 | 浙江陶特容器科技股份有限公司 | Solid precursor source storage sublimator |
| CN114990528A (en) * | 2022-05-16 | 2022-09-02 | 武汉理工大学 | Device and method for improving temperature field in CVD equipment cavity |
| CN116103636A (en) * | 2023-04-12 | 2023-05-12 | 上海星原驰半导体有限公司 | Solid-phase precursor output device and vapor deposition system |
| CN116121730A (en) * | 2023-04-12 | 2023-05-16 | 江苏鹏举半导体设备技术有限公司 | Solid precursor source sublimation device |
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| CN212335288U (en) * | 2020-04-27 | 2021-01-12 | 深圳市原速光电科技有限公司 | Thin film material deposition reaction device and thin film material deposition reaction system |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113897593A (en) * | 2021-09-13 | 2022-01-07 | 浙江陶特容器科技股份有限公司 | Solid precursor source storage sublimator |
| CN113897593B (en) * | 2021-09-13 | 2023-08-11 | 浙江陶特容器科技股份有限公司 | Solid-state precursor source storage sublimator |
| CN114990528A (en) * | 2022-05-16 | 2022-09-02 | 武汉理工大学 | Device and method for improving temperature field in CVD equipment cavity |
| CN114990528B (en) * | 2022-05-16 | 2023-11-03 | 武汉理工大学 | Device and method for improving temperature field in cavity of CVD equipment |
| CN116103636A (en) * | 2023-04-12 | 2023-05-12 | 上海星原驰半导体有限公司 | Solid-phase precursor output device and vapor deposition system |
| CN116121730A (en) * | 2023-04-12 | 2023-05-16 | 江苏鹏举半导体设备技术有限公司 | Solid precursor source sublimation device |
| CN116121730B (en) * | 2023-04-12 | 2023-09-01 | 江苏鹏举半导体设备技术有限公司 | Solid precursor source sublimation device |
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