CN211921690U - Airflow distribution device and thin film deposition equipment - Google Patents
Airflow distribution device and thin film deposition equipment Download PDFInfo
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- CN211921690U CN211921690U CN202020418637.3U CN202020418637U CN211921690U CN 211921690 U CN211921690 U CN 211921690U CN 202020418637 U CN202020418637 U CN 202020418637U CN 211921690 U CN211921690 U CN 211921690U
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Abstract
The embodiment of the utility model discloses air current distribution device and film deposition equipment, this air current distribution device includes: a gas dispersion chamber; the gas dispersion cavity is provided with a gas inlet and a pore structure and/or a dispersion structure which are arranged opposite to the gas inlet, the pore structure is a gas dispersion plate, and the gas dispersion plate is provided with a plurality of first through holes; the gas dispersion cavity is used for performing gas flow path compensation on the entering gas through the first through hole in the aperture structure, and/or the gas dispersion cavity is used for performing gas flow path compensation on the entering gas through the dispersion structure. The embodiment of the utility model provides an in, gaseous follow air inlet gets into, has realized the air current path compensation through pore structure and/or dispersion structure, has improved the homogeneity that the inside gas flow of cavity distributes, and then has improved the homogeneity of follow-up coating process.
Description
Technical Field
The embodiment of the utility model provides a relate to the coating film technique, especially relate to an air current distribution device and film deposition equipment.
Background
Thin film deposition is an essential link in the manufacturing process of integrated circuits, and various thin film deposition processes exist, including atomic layer deposition. Atomic layer deposition is a process in which vapor phase precursor pulses are alternately introduced into a reactor and chemisorbed and reacted on a substrate to form a deposited film.
At present, a gas disk is integrated in a reactor into which a gas-phase precursor is introduced, the gas disk is used for improving the diffusion uniformity of the gas-phase precursor, and the gas-phase precursor is dispersed and output to be uniformly deposited on a substrate to form a deposition film.
However, the uniformity of the film deposited on the substrate by using the existing gas disk is poor, the problem that the film is thick in the middle and thin at the edge can occur, even the middle thickness is 2 times of the edge thickness, and the performance of the device is seriously influenced.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides an air current distribution device and film deposition equipment to solve the inhomogeneous problem of current coating film.
The embodiment of the utility model provides an air current distribution device, include: a gas dispersion chamber;
the gas dispersion cavity is provided with a gas inlet and a pore structure and/or a dispersion structure which are arranged opposite to the gas inlet, the pore structure is a gas dispersion plate, and the gas dispersion plate is provided with a plurality of first through holes;
the gas dispersion cavity is used for performing gas flow path compensation on the entering gas through the first through hole in the aperture structure, and/or the gas dispersion cavity is used for performing gas flow path compensation on the entering gas through the dispersion structure.
Further, between any two first through holes in the aperture structure, the aperture of the first through hole close to the center point of the gas dispersion plate is smaller than the aperture of the first through hole far away from the center point of the gas dispersion plate.
Furthermore, the first through holes are distributed into a plurality of circles of first through holes according to concentric circles, and the distribution density of the circle of first through holes close to the center point of the gas dispersion plate is smaller than that of the circle of first through holes far away from the center point of the gas dispersion plate.
Furthermore, the first through holes are conical, and between any two first through holes in the aperture structure, the taper of the first through holes close to the central point of the gas dispersion plate is smaller than the taper of the first through holes far away from the central point of the gas dispersion plate.
Further, the dispersion structure is a distribution cone, the dispersion structure is located between the gas inlet and the aperture structure, and the entering gas flows through the conical surface of the distribution cone and then is output through the first through hole; the diameter of the conical bottom surface of the distribution cone body is 1/3-2/3 of the diameter of the bottom surface of the gas dispersion plate.
Further, the dispersion structure is a conical dispersion plate communicated with the gas inlet, the conical dispersion plate is provided with a plurality of second through holes, and the entering gas flows through the second through holes of the conical dispersion plate and is output through the first through holes.
Further, two of the first through holes in the aperture structure have a depth of the first through hole close to the center point of the gas dispersion plate greater than a depth of the first through hole far from the center point of the gas dispersion plate.
Further, the gas dispersion cavity further comprises a dispersion partition plate located between the dispersion structure and the aperture structure, and the dispersion partition plate is provided with a plurality of third through holes.
Furthermore, the aperture of the third through hole close to the center point of the dispersion partition plate is larger than that of the third through hole far away from the center point of the dispersion partition plate; and/or the presence of a gas in the gas,
the third through holes are distributed into a plurality of circles of third through holes according to concentric circles, and the distribution density of the circle of third through holes close to the central point of the dispersion partition plate is greater than that of the circle of third through holes far away from the central point of the dispersion partition plate.
The embodiment of the utility model provides a film deposition equipment still provides, contain as above the air current distribution device.
The embodiment of the utility model provides an in, adopt aperture structure and/or dispersion structure, can carry out the air current path compensation to the gas that the air inlet got into, make behind the gas disk structure of aperture structure and/or dispersion structure, the inside gas flow distribution of cavity is comparatively even, and then has improved the homogeneity of follow-up coating process.
Drawings
To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description will be given below of the drawings required for the embodiments or the technical solutions in the prior art, and it should be apparent that the drawings in the following description are some specific embodiments of the present invention, and it is obvious for those skilled in the art that the basic concepts of the device structure, the driving method and the manufacturing method disclosed and suggested according to the various embodiments of the present invention can be extended and extended to other structures and drawings, which should not be undoubted to be within the scope of the claims of the present invention.
Fig. 1 is a schematic view of an airflow distribution device provided by an embodiment of the present invention;
fig. 2 is a schematic view of an airflow distribution device provided by an embodiment of the present invention;
fig. 3 is a schematic view of an airflow distribution device provided by an embodiment of the present invention;
FIG. 4 is a schematic view of the gas exit surface of the gas dispersion chamber in an embodiment of the present invention;
fig. 5 is a schematic top view of an aperture structure in an embodiment of the invention;
fig. 6 is a schematic view of an airflow distribution device provided by an embodiment of the present invention;
fig. 7 is a schematic view of an airflow distribution device provided by an embodiment of the present invention;
fig. 8 is a schematic view of an airflow distribution device provided by an embodiment of the present invention;
fig. 9 is a schematic view of an airflow distribution device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be described clearly and completely through embodiments with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments obtained by a person skilled in the art based on the basic concepts disclosed and suggested by the embodiments of the present invention belong to the protection scope of the present invention.
The embodiment of the utility model provides an air current distribution device, this air current distribution device includes as shown in fig. 1 ~ 3: a gas dispersion chamber 1; the gas dispersion cavity 1 is provided with a gas inlet 11 and an aperture structure 12 and/or a dispersion structure 13 which are arranged opposite to the gas inlet 11, the aperture structure 12 is a gas dispersion plate, and the gas dispersion plate 12 is provided with a plurality of first through holes 121; the gas dispersion chamber 1 is used for gas flow path compensation of the incoming gas through the first through hole 121 in the aperture structure 12 and/or the gas dispersion chamber 1 is used for gas flow path compensation of the incoming gas through the dispersion structure 13.
It is understood that the gas dispersion chamber 1 as a whole can be divided into a first diffusion chamber 1a and a second diffusion chamber 1b in a spatial region, wherein the gas inlet 11 of the gas dispersion chamber 1 serves as the gas inlet side of the first diffusion chamber 1a, the gas outlet side of the aperture structure 12 or the dispersion structure 13 serves as the gas outlet side of the first diffusion chamber 1a and the gas inlet side of the second diffusion chamber 1b, and the gas outlet side of the gas dispersion chamber 1 serves as the gas outlet side of the second diffusion chamber 1 b.
The gas flow path compensation means that gas flows out from the gas inlet side in the first diffusion cavity 1aThe diffusion path on the gas side is adjusted. On one hand, the diffusion path lengths of the gas in the vacuum cavity are different, on the other hand, the gas movement direction is different from the open angle direction of the gas inlet, and the projection rates of the most probable rate directions of the corresponding gas molecules at different gas outlets are different, so that the density distribution of the reaction gas at the gas outlets is greatly different and needs to be compensated. The pore structure and/or the dispersion structure are/is arranged, so that when the gas firstly reaches the surface of the dispersion structure, the diffusion path is blocked, and the diffusion track of the gas flow is redistributed; because of the difference of the air flow paths, the generated resistance is different, namely the generated pressure drop is different, the pressure drop caused by the edge air flow path is small, and the pressure drop of the central air flow path is large; through hf＝λ(l/d)(v2And/2 g) designing the on-way resistance of different paths, and finally enabling the gas passing through the dispersion structure or the pore diameter structure to achieve uniform and stable flow distribution when the gas reaches the gas outlet surface of the gas dispersion cavity or the surface of the substrate. As shown in fig. 4, the gas outlet side/surface of the gas dispersion chamber 1 is circular, wherein a plurality of identical vent holes 1c are uniformly distributed, and the gas in the second diffusion chamber 1b is uniformly output from the second diffusion chamber 1b through the plurality of vent holes 1 c.
The gas dispersion chamber 1 shown in fig. 1 has a gas inlet 11 and an aperture structure 12 disposed opposite to the gas inlet 11, an axis of the gas inlet 11 overlapping with a center point of the gas dispersion plate, wherein a gas outlet side of the aperture structure 12 is a gas outlet side of the first diffusion chamber 1 a. When the gas enters the first diffusion chamber 1a from the gas inlet 11 and diffuses to the gas inlet end of the first through hole 121, the time for the gas to diffuse to the area near the center point of the gas dispersion plate is shorter than the time for the gas to diffuse to the area far from the center point of the gas dispersion plate. At this time, the gas dispersion chamber 1 performs gas flow path compensation on the entering gas through the first through holes 121 in the aperture structure 12, so that the gas flow output from each first through hole 121 to the second diffusion chamber 1b is close, that is, in any two first through holes 121, the gas flow of the first through hole 121 far away from the center point of the gas dispersion plate is almost equal to the gas flow of the first through hole 121 close to the center point of the gas dispersion plate, so that relatively uniform and stable flow distribution and output are achieved inside the second diffusion chamber 1b, and the uniformity of the subsequent coating process is further improved.
As shown in fig. 2, the gas dispersion chamber 1 has a gas inlet 11 and a dispersion structure 13 disposed opposite to the gas inlet 11, an axis of the gas inlet 11 overlaps an axis of the dispersion structure 13, wherein a side of the dispersion structure 13 away from the gas inlet 11 is an outlet side of the first diffusion chamber 1a, and the gas dispersion chamber 1 performs gas flow path compensation on the incoming gas through the dispersion structure 13. Specifically, when the gas enters the first diffusion cavity 1a from the gas inlet 11 for diffusion, the gas flows through the side surface of the dispersion structure 13 and then diffuses to the second diffusion cavity 1b, the dispersion structure 13 guides the gas flow, and the difference between the gas flow of the edge area of the second diffusion cavity 1b and the gas flow of the central area of the second diffusion cavity 1b is reduced, so that the gas passing through the dispersion structure can achieve uniform and stable flow distribution when reaching the gas outlet surface of the gas diffusion cavity or the surface of the substrate, and the uniformity of the coating process is improved.
The gas dispersion chamber 1 has a gas inlet 11 and an aperture structure 12 and a dispersion structure 13 arranged opposite the gas inlet 11, wherein the dispersion structure 13 is located between the gas inlet 11 and the aperture structure 12, as shown in fig. 3. The gas dispersion chamber 1 is used for gas flow path compensation of the incoming gas through the first through hole 121 in the aperture structure 12 and/or the gas dispersion chamber 1 is used for gas flow path compensation of the incoming gas through the dispersion structure 13. Specifically, when the gas enters the first diffusion cavity 1a from the gas inlet 11 to be diffused, the gas flows through the side surface of the dispersion structure 13 and then diffuses onto the pore structure 12, the dispersion structure 13 guides the gas flow, and the difference between the gas flow flowing to the edge area of the pore structure 12 and the gas flow flowing to the central area of the pore structure 12 is reduced, so that the gas passing through the dispersion structure can achieve more uniform and stable flow distribution when reaching the surface of the pore structure; then, the first through holes 121 in the aperture structure 12 further perform airflow path compensation on the gas, so that the flow rate of the gas output to the second diffusion cavity 1b by each first through hole 121 is close, the uniformity and stability of the flow rate distribution inside the second diffusion cavity 1b are further improved, and the uniformity of the subsequent coating process is further improved.
The embodiment of the utility model provides an in, adopt aperture structure and/or dispersion structure, can carry out the air current path compensation to the gas that the air inlet got into, make behind the gas disk structure of aperture structure and/or dispersion structure, gaseous can reach comparatively even and stable flow distribution when reaching the surface that gaseous dispersion cavity goes out gas face or basement, and then improved coating process's homogeneity.
The above is the basic design of the present invention, and the following is illustrated by a plurality of specific embodiments.
Illustratively, on the basis of the above technical solution, between any two first through holes 121 in the aperture structure 12 shown in fig. 1, the aperture of the first through hole 121 close to the center point of the gas distribution plate is smaller than the aperture of the first through hole 121 far from the center point of the gas distribution plate. The aperture of the first through-hole 121 herein is the size of the first through-hole 121 in the arrangement direction thereof, i.e., the diameter of the bottom surface. The bottom surface of the first through-hole 121 may be optionally circular, and in other embodiments the bottom surface of the first through-hole may be optionally oval, triangular, square, rectangular, hexagonal, or other shapes. The radial cylinder heights of the optional first through holes 121 are equal.
In this embodiment, the size of the opening of the first through holes 121 of the gas distribution plate 12 is changed, so that the aperture of the first through holes 121 in the middle area of the gas distribution plate 12 is smaller, and the aperture of the first through holes 121 in the edge area of the gas distribution plate 12 is larger, so that the gas discharge amount of the first through holes 121 in the middle area of the gas distribution plate 12 is smaller and the gas discharge amount of the first through holes 121 in the edge area is larger. As it is known that the gas enters the first diffusion chamber 1a from the gas inlet 11, the gas is diffused to the middle region of the gas distribution plate 12 first, and the gas flow of the first through holes 121 of the middle region of the gas distribution plate 12 is fast and the gas flow of the first through holes 121 of the edge region is slow.
Based on this, the reaction gas is greatly influenced by the aperture structure in the first through hole 121 in the middle area of the gas distribution plate 12 (the generated pressure drop is large) and has a small flow area, the reaction gas has a large flow area in the first through hole 121 in the edge area of the gas distribution plate 12 and is less influenced by the aperture structure (the generated pressure drop is small), and finally, the reaction gas density obtained per unit area is balanced, so that the gas flow path compensation mode makes the gas flow density in the middle area of the gas distribution plate 12 and the gas flow density in the edge area of the gas distribution plate 12 tend to be consistent. The gas density in the middle area and the edge area of the gas dispersion plate 12 tends to be consistent, so that the purpose of controlling the amount of gas entering the second diffusion cavity 1b can be achieved, and the gas flow in the second diffusion cavity 1b is uniformly input and output, thereby improving the deposition effect of the coating film.
Illustratively, based on the above technical solution, as shown in fig. 5, the plurality of first through holes 121 are distributed in concentric circles as a plurality of circles of first through holes, and the distribution density of a circle of first through holes near the center point of the gas distribution plate is less than the distribution density of a circle of first through holes far from the center point of the gas distribution plate. The first through holes 121 may have the same diameter and the first through holes 121 may have the same height of the radial cylinder. The bottom surface of the first through-hole 121 may be optionally circular, and in other embodiments the bottom surface of the first through-hole may be optionally oval, triangular, square, rectangular, hexagonal, or other shapes. Fig. 5 shows a top view of the gas distribution plate 12.
In this embodiment, the positions of the openings of the first through holes 121 of the gas distribution plate 12 are varied, so that the distribution density of the circles of the first through holes 121 in the middle region of the gas distribution plate 12 is small, and the distribution density of the circles of the first through holes 121 in the edge region of the gas distribution plate 12 is large, so that the number of the first through holes 121 per unit area of the middle region of the gas distribution plate 12 is small, and the number of the first through holes 121 per unit area of the edge region is large. As it is known that the gas enters the first diffusion chamber 1a from the gas inlet 11, the gas is diffused to the middle region of the gas distribution plate 12 first, and the gas flow of the first through holes 121 of the middle region of the gas distribution plate 12 is fast and the gas flow of the first through holes 121 of the edge region is slow.
Based on this, the influence of the aperture structure on the reaction gas in the first through hole concentric circle of the middle area of the gas dispersion plate 12 is large and has a small flow area, the influence of the aperture structure on the reaction gas in the first through hole concentric circle of the edge area of the gas dispersion plate 12 is small and has a large flow area, so that the reaction gas density obtained in a unit area is balanced, and thus, the gas flow rate of the middle area of the gas dispersion plate 12 and the gas flow rate of the edge area of the gas dispersion plate 12 tend to be consistent in an air flow path compensation mode, wherein the gas flow rate is the gas output amount in a unit time. The gas flow rates of the middle area and the edge area of the gas dispersion plate 12 tend to be consistent, so that the purpose of controlling the gas flow rate entering the second diffusion cavity 1b can be realized, and the gas flow in the second diffusion cavity 1b is uniformly input and output, thereby improving the film coating deposition effect.
Illustratively, on the basis of the above technical solution, as shown in fig. 6, the first through holes 121 are tapered, and between any two first through holes 121 in the aperture structure 12, the taper of the first through holes 121 near the center point of the gas distribution plate is smaller than the taper of the first through holes 121 far from the center point of the gas distribution plate. Wherein the taper of the first through-hole 121 is the opening angle θ of its tapered cross-section. The first through holes 121 are here optionally identical in shape and equal in radial cylinder height. The top and bottom surfaces of the optional first through-hole 121 are both circular, and in other embodiments the top and bottom surfaces of the optional first through-hole are each oval, triangular, square, rectangular, hexagonal, or other shapes.
In this embodiment, the size of the opening of the first through holes 121 of the gas distribution plate 12 is changed, so that the taper of the first through holes 121 close to the center of the gas distribution plate is small and the taper of the first through holes 121 far from the center of the gas distribution plate is large, so that the flow area of the first through holes 121 in the middle region of the gas distribution plate 12 is small and the flow area of the first through holes 121 in the edge region is large.
The flow area of the first through hole 121 in the middle area of the gas dispersion plate 12 is small, but the upstream gas flow density is large, the flow area of the first through hole 121 in the edge area is large, but the component of the gas flow density and the macroscopic velocity which can be obtained along the aperture direction is small, so that the gas flow density in the middle area of the gas dispersion plate 12 and the gas flow density in the edge area tend to be consistent in a gas flow path compensation mode, the purpose of controlling the gas flow entering the second diffusion cavity 1b can be achieved, the gas flow in the second diffusion cavity 1b is uniformly input and output, and the film coating deposition effect is improved.
Illustratively, on the basis of the above technical solution, as shown in fig. 3, the dispersion structure 13 is a distribution cone, the dispersion structure 13 is located between the gas inlet 11 and the aperture structure 12, and the gas entering through the cone of the distribution cone is output through the first through hole 121; the diameter of the conical bottom surface of the distribution cone body is 1/3-2/3 of the diameter of the bottom surface of the gas dispersion plate 12. The gas outlet side of the optional gas dispersion cavity 1 is circular, the bottom surface of the gas dispersion disc 12 is circular, the diameter R of the bottom surface is equal to that of the gas outlet side of the gas dispersion cavity 1, the optional distribution cone body is a cone, and the diameter of the bottom surface of the cone is larger than or equal to R/3 and smaller than or equal to 2R/3.
In this embodiment, the gas is input into the first diffusion cavity 1a from the gas inlet 11, and is uniformly diffused once through the distribution cone, and the specific gas flow is uniformly diffused above the gas dispersion plate 12 along the side wall of the cone when passing through the top of the cone, so that the difference between the gas flow rates entering the middle area and the edge area of the gas dispersion plate can be reduced through the first diversion and dispersion, and the gas passing through the dispersion structure can achieve more uniform and stable flow rate distribution when reaching the surface of the pore structure; and then the second time of shunting is carried out through the gas dispersion plate 12, and the uniformity and the stability of the gas flow distribution in the cavity are further improved through shunting. Therefore, the gas can uniformly enter the second diffusion cavity 1b and be uniformly output from the gas dispersion cavity 1, and the film coating deposition effect is improved.
Illustratively, based on the above technical solution, the dispersion structure 13 is a conical dispersion plate communicated with the gas inlet 11 as shown in fig. 7, the conical dispersion plate has a plurality of second through holes 131, and the incoming gas flows through the second through holes 131 of the conical dispersion plate and is output through the first through holes 121. The gas inlet side of the optional conical dispersion plate overlaps with the gas inlet 11, and the gas in the gas inlet 11 directly enters the conical dispersion plate for first diffusion.
In this embodiment, the gas directly enters the conical dispersion plate from the gas inlet 11 to be diffused for the first time, specifically, the gas directly enters the second through hole 131 of the conical dispersion plate from the gas inlet 11 to be split, and the first splitting can reduce the difference of the gas flow entering the middle area and the edge area of the gas dispersion plate, so that the gas passing through the dispersion structure can achieve relatively uniform and stable flow distribution when reaching the surface of the pore structure; and then the second time of shunting is carried out through the first through holes 121 of the gas dispersion plate 12, so that the uniformity and stability of the gas flow distribution in the cavity are further improved. Therefore, the gas can uniformly enter the second diffusion cavity 1b and be uniformly output from the gas dispersion cavity 1, and the film coating deposition effect is improved.
Illustratively, on the basis of the above technical solution, as shown in fig. 8, in the two first through holes 121 in the aperture structure 12, the depth of the first through hole 121 near the center point of the gas dispersion plate is greater than the depth of the first through hole 121 far from the center point of the gas dispersion plate. Optionally, the bottom surface of the first through hole 121 is circular, i.e., the first through hole is cylindrical in shape; in other embodiments, the bottom surface of the first through hole may be oval, triangular, square, rectangular, hexagonal, or other shapes. The depth of the first through-hole 121 is the dimension of the first through-hole 121 in the through-hole extending direction thereof, i.e., the radial cylindrical height.
In this embodiment, the opening size of the first through holes 121 of the gas distribution plate 12 is varied so that the depth of the first through holes 121 in the middle region of the gas distribution plate 12 is larger and the depth of the first through holes 121 in the edge region of the gas distribution plate 12 is smaller. Based on this, the time required for the gas to diffuse in the first through holes 121 in the middle region of the gas distribution plate 12 is longer, and the time required for the gas to diffuse in the first through holes 121 is shorter as the gas distribution plate 12 is closer to the edge region. When the gas enters the first diffusion chamber 1a from the gas inlet 11, the gas first reaches the surface of the first through hole 121 in the middle area of the gas distribution plate 12, and the gas flow of the first through hole 121 in the middle area of the gas distribution plate 12 is fast and the gas flow of the first through hole 121 in the edge area is slow.
Based on this, the gas flow of the reaction gas in the first through hole 121 in the middle area of the gas dispersion plate 12 is fast but the diffusion time is long, and the gas flow of the reaction gas in the first through hole 121 in the edge area of the gas dispersion plate 12 is slow but the diffusion time is short, so that the gas flow of different areas of the gas dispersion plate 12 can be compensated, the gas flow of different areas of the gas dispersion plate 12 is balanced, the gas flow inside the second diffusion cavity 1b is relatively uniform, and the deposition effect of the coating film is relatively good. It will be appreciated that the present embodiment utilises the difference in diffusion velocities of the gases within the chamber and the holes to achieve gas flow path compensation and to achieve a balance in the concentration and duration of the reactive gas density across the surface to be deposited.
Illustratively, on the basis of the above technical solution, the gas dispersion chamber 1 further includes a dispersion baffle 14 located between the dispersion structure 13 and the aperture structure 12, and the dispersion baffle 14 has a plurality of third through holes 141.
In this embodiment, after entering from the gas inlet 11, the gas is diffused for the first time by the dispersion structure 13, so that the uniformity of the gas flow can be improved, and the gas passing through the dispersion structure can achieve a uniform and stable flow distribution when reaching the surface of the dispersion partition plate; then the gas reaches the dispersing partition plate 14, and is subjected to secondary diffusion through the split flow of the third through holes 141, and the secondary diffusion can reduce the difference of gas flow reaching the middle area and the edge area of the gas dispersing plate, so that the gas flows into the gas dispersing plate 12 more uniformly, and the uniformity of the gas in the cavity is improved; the air current reaches gas dispersion dish 12, and the reposition of redundant personnel through wherein first through-hole 121 carries out the diffusion for the third time, and further reposition of redundant personnel improves the homogeneity and the stability of intracavity gas flow distribution. Therefore, the gas can uniformly enter the second diffusion cavity 1b and be uniformly output from the gas dispersion cavity 1, and the film coating deposition effect is improved.
Two third through holes in the optional dispersion partition plate, wherein the aperture of the third through hole close to the center point of the dispersion partition plate is larger than that of the third through hole far away from the center point of the dispersion partition plate; and/or the third through holes are distributed into a plurality of circles of third through holes according to concentric circles, and the distribution density of the circle of third through holes close to the central point of the dispersion partition plate is greater than that of the circle of third through holes far away from the central point of the dispersion partition plate. In this embodiment, the size and/or the distribution density of the openings of the third through holes in the dispersion partition plate are/is changed, so that the uniformity of the gas flow rate of the second diffusion can be improved, and the uniformity of the gas flow in the cavity is further controlled. It is understood that the distribution density and/or the size of the openings of the through holes affect the diffusion in a similar manner to the first through holes, and thus the detailed description thereof is omitted.
Based on the same inventive concept, the embodiment of the present invention provides a thin film deposition apparatus, which includes the gas flow distribution device as described in any of the above embodiments.
In this embodiment, the optional thin film deposition apparatus is a PEALD (plasma enhanced atomic layer deposition) apparatus, and the gas flow distribution device is integrated in the PEALD apparatus, and the PEALD apparatus is used for preparing a thin film on a substrate. For example, the gas flow distribution device is used to deposit an alumina film on a substrate, and the process comprises: alumina gas prepared by the PEALD equipment enters the gas dispersion cavity 1 through the gas inlet 11, the alumina gas can be uniformly input into the second diffusion cavity 1b through the gas flow path compensation of the pore structure 12 and/or the dispersion structure 13, and the gas in the second diffusion cavity 1b is uniformly output and deposited on the substrate so as to form an alumina film with uniform thickness on the substrate. Compared with the prior art, the thickness difference between the middle and the edge of the film is reduced, the problem of overlarge thickness difference between the middle and the edge of the film is solved, and the uniformity of the film coating is improved.
In this embodiment, at least one gas disk structure, such as a pore structure and/or a dispersion structure, is disposed between the gas inlet and the gas outlet side of the gas flow distribution device, and gas can uniformly enter the cavity through the gas disk structure and then be uniformly output, so that a good film uniformity can be obtained during film deposition.
In this embodiment, the air pan structure in the air flow distribution device includes at least one aperture structure, and the size, depth and distribution density of the openings of the plurality of through holes in the aperture structure can be changed to improve the uniformity of the air flow distribution; and/or the air disc structure further comprises at least one dispersion structure, the dispersion structure is a distribution cone, the conical side wall of the distribution cone can be used as a flow dividing surface, and through holes can also be arranged to be used as flow dividing channels so as to improve the uniformity of the air flow distribution. It is understood that the present invention is not limited to the above examples or combinations, and may include other combinations or structures, as long as the uniformity of the gas flow distribution in the cavity can be improved.
It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.
Claims (10)
1. An airflow distribution apparatus, comprising: a gas dispersion chamber;
the gas dispersion cavity is provided with a gas inlet and a pore structure and/or a dispersion structure which are arranged opposite to the gas inlet, the pore structure is a gas dispersion plate, and the gas dispersion plate is provided with a plurality of first through holes;
the gas dispersion cavity is used for performing gas flow path compensation on the entering gas through the first through hole in the aperture structure, and/or the gas dispersion cavity is used for performing gas flow path compensation on the entering gas through the dispersion structure.
2. The gas flow distribution apparatus according to claim 1, wherein between any two of the first through holes in the aperture structure, the aperture of the first through hole near the center point of the gas dispersion plate is smaller than the aperture of the first through hole far from the center point of the gas dispersion plate.
3. The gas flow distribution apparatus of claim 1, wherein the plurality of first through holes are distributed in concentric circles as a plurality of circles of first through holes, and a circle of the first through holes close to the center point of the gas distribution plate has a distribution density smaller than a circle of the first through holes far from the center point of the gas distribution plate.
4. The gas flow distribution apparatus of claim 1, wherein the first through holes are tapered, and between any two first through holes in the aperture structure, the taper of the first through holes near the center point of the gas distribution plate is smaller than the taper of the first through holes far from the center point of the gas distribution plate.
5. The gas flow distribution apparatus of claim 1, wherein the dispersion structure is a distribution cone, the dispersion structure is located between the gas inlet and the aperture structure, and the incoming gas flows through the conical surface of the distribution cone and is output through the first through hole; the diameter of the conical bottom surface of the distribution cone is 1/3-2/3 of the diameter of the bottom surface of the gas dispersion plate.
6. The gas flow distribution apparatus of claim 1, wherein the dispersion structure is a conical dispersion disk in communication with the gas inlet, the conical dispersion disk having a plurality of second through holes, the incoming gas flowing through the second through holes of the conical dispersion disk and out through the first through holes.
7. The gas flow distribution apparatus of claim 1, wherein two of the first through holes in the aperture structure have a depth of the first through hole closer to the center point of the gas dispersion plate greater than a depth of the first through hole farther from the center point of the gas dispersion plate.
8. The gas flow distribution apparatus of claim 1, wherein the gas dispersion chamber further comprises a dispersion baffle between the dispersion structure and the aperture structure, the dispersion baffle having a plurality of third through holes.
9. The airflow distribution apparatus of claim 8 wherein the diameter of two of said third through holes in said dispersing partition, said third through holes near the center point of said dispersing partition, are larger than the diameter of said third through holes away from the center point of said dispersing partition; and/or the presence of a gas in the gas,
the third through holes are distributed into a plurality of circles of third through holes according to concentric circles, and the distribution density of the circle of third through holes close to the central point of the dispersion partition plate is greater than that of the circle of third through holes far away from the central point of the dispersion partition plate.
10. A thin film deposition apparatus comprising the gas flow distribution device according to any one of claims 1 to 9.
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| CN113373430A (en) * | 2021-05-21 | 2021-09-10 | 江苏鹏举半导体设备技术有限公司 | Atomic layer deposition apparatus |
| CN114790574A (en) * | 2022-05-16 | 2022-07-26 | 浙江大学 | Vertical silicon epitaxial reaction chamber air inlet device with adjustable flow |
| CN115181960A (en) * | 2022-06-23 | 2022-10-14 | 西安鑫垚陶瓷复合材料有限公司 | CVI (composite chemical vapor infiltration) flow guide device of thin-wall pointed cone rotating part and using method thereof |
| CN117512565A (en) * | 2023-10-27 | 2024-02-06 | 江苏首芯半导体科技有限公司 | Film deposition cavity and air inlet mechanism thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113373430A (en) * | 2021-05-21 | 2021-09-10 | 江苏鹏举半导体设备技术有限公司 | Atomic layer deposition apparatus |
| CN114790574A (en) * | 2022-05-16 | 2022-07-26 | 浙江大学 | Vertical silicon epitaxial reaction chamber air inlet device with adjustable flow |
| CN115181960A (en) * | 2022-06-23 | 2022-10-14 | 西安鑫垚陶瓷复合材料有限公司 | CVI (composite chemical vapor infiltration) flow guide device of thin-wall pointed cone rotating part and using method thereof |
| CN115181960B (en) * | 2022-06-23 | 2023-11-24 | 西安鑫垚陶瓷复合材料股份有限公司 | CVI guiding device of thin-wall pointed cone rotating member and using method thereof |
| CN117512565A (en) * | 2023-10-27 | 2024-02-06 | 江苏首芯半导体科技有限公司 | Film deposition cavity and air inlet mechanism thereof |
| CN117512565B (en) * | 2023-10-27 | 2024-06-07 | 江苏首芯半导体科技有限公司 | Film deposition cavity and air inlet mechanism thereof |
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