CN105331953A - Gas inlet device and semiconductor machining device - Google Patents
Gas inlet device and semiconductor machining device Download PDFInfo
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- CN105331953A CN105331953A CN201410352844.2A CN201410352844A CN105331953A CN 105331953 A CN105331953 A CN 105331953A CN 201410352844 A CN201410352844 A CN 201410352844A CN 105331953 A CN105331953 A CN 105331953A
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Abstract
The invention provides a gas inlet device and a semiconductor machining device. The gas inlet device comprises a gas inlet and a gas inlet chamber. The gas inlet chamber comprises N stages of gas uniformizing layers. The first stage of gas uniformizing layer comprises one subunit which is used for evenly distributing reaction gas coming from the gas inlet into at least two branches in the direction perpendicular to the reaction gas conveying direction. The ith stage of gas uniformizing layer comprises a plurality of subunits which are used for evenly distributing all branches distributed by all subunits in the i-1th stage of gas uniformizing layer into at least two branches again in a one-to-one correspondence manner in the direction perpendicular to the reaction gas conveying direction, wherein the number of the branches is an even number, and i is equal to 2, 3,...N. All subunits in the Nth stage of gas uniformizing layer are used for conveying all branches which are independently distributed into a reaction chamber from the top of the reaction chamber. By means of the gas inlet device, the distribution uniformity of gas flow in the reaction chamber can be improved, effectiveness and efficiency of gas flow regulation can be improved, and therefore the process efficiency can be improved.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly, relate to a kind of diffuser and semiconductor processing equipment.
Background technology
The epitaxially grown ultimate principle of chemical vapour deposition is transported in reaction chamber by reactant gases, and make reactant gases at substrate surface generation chemical reaction by modes such as heating, the growth atomic deposition obtained on the surface of a substrate, and grows formation single crystalline layer film.Carrying out in the epitaxially grown process of chemical vapour deposition, usually ensureing in reaction chamber, to transport reactant gases timely and accurately by gas transport and Controlling System (comprising pipeline, flow and valve etc.).
In order to meet even etc. the requirement of uniform doping needed for growing film, thickness, improve concentration and the thickness evenness of film, need near substrate surface, to there is equally distributed airflow field, warm field and concentration field, this just requires in process of growth, it is equal that gas transport and Controlling System can ensure that reactant gases is transported to the speed of the reactant of substrate surface regional and hotchpotch, and make airflow field keep uniform parallel laminar flow regime, produce any fluctuation, turbulent flow and Convective Vortex to avoid airflow field.
At present, semiconductor processing equipment is mainly divided into horizontal air inlet and vertical air inlet two kinds of modes.Wherein, horizontal intake method refers to that in the horizontal direction the side of (that is, the direction being parallel to substrate top surface) autoreaction chamber is to relative opposite side transport of reactant gases body; The top of vertical air inlet mode refers to vertically (that is, perpendicular to the direction of substrate top surface) autoreaction chamber is to bottom transport of reactant gases body.In vertical air inlet mode, as shown in Figure 1, be the sectional view of existing semiconductor processing equipment.Semiconductor processing equipment comprises reaction chamber 11, is provided with pallet 13 in reaction chamber 11, for carrier substrate 12; Further, the top of reaction chamber 11 is provided with diffuser 14, for the top of autoreaction chamber 11 to transport of reactant gases body in reaction chamber 11.In addition, gas barrier 15 is also provided with in the bottom of reaction chamber 11, for discharging the residual gas in reaction chamber 11.In the process of carrying out technique, reactant gases flows into reaction chamber 11 straight down via diffuser 14, and chemical reaction occurs the substrate 13 when through pallet 12 and on it, reacted residual gas discharges reaction chamber 11 with carrier gas by gas barrier 15.
The concrete structure of above-mentioned diffuser 14 is: it comprises inlet mouth, shunts sub-chamber and air outlet.Wherein, inlet mouth has three tunnels, is respectively: the central air induction mouth 141 of the central zone corresponding respectively to reaction chamber 11 and two fringe regions being positioned at these both sides, central zone and two Road Edge inlet mouths 142; Shunt sub-chamber comprise one central authorities shunting sub-chamber 143 and two edges shunt sub-chamber 144, three is connected with above-mentioned three road inlet mouths correspondingly, and is arranged in a row along the radial direction of reaction chamber 11; The quantity of air outlet is 28, and be arranged in a row equally along the orientation in the sub-chamber of shunting, wherein, the air outlet 145,16 middle parts in the middle part of being positioned at is shunted sub-chamber 143 with central authorities and is connected, and is delivered to the central zone of reaction chamber in order to reactant gases central authorities shunted in sub-chamber 143 in the horizontal direction; The air outlet, 6 edges 146 laying respectively at these both sides, 16 air outlets is shunted sub-chamber 144 with two edges correspondingly and is connected, in order to respectively two edges reactant gases shunted in sub-chamber 144 to be delivered in the horizontal direction the fringe region of reaction chamber.In addition, in each air outlet, variable valve (such as needle-valve) is also provided with, in order to regulate the airshed of inlet mouth.
Inevitably there is following problem in actual applications in above-mentioned diffuser 14, that is: because every road inlet mouth is arranged on the center position in the sub-chamber of shunting corresponding with it, this makes to enter the speed that the reactant gases in the sub-chamber of shunting spreads towards the inlet mouth of centre and is greater than the speed spread towards the inlet mouth of both sides, thus cause the flow velocity of the reactant gases corresponding to each air outlet to occur difference, that is, jet effect.Be subject to the impact of this jet effect, near the inlet mouth that gas flow rate there are differences, there will be whirlpool group, thus cause the air flow method in reaction chamber uneven.
Although 28 variable valve can be utilized to regulate separately the airshed of 28 air outlets, to compensate the flow velocity difference of each air outlet, but, this regulative mode not only workload is large and complicated, and all can have an impact to the airflow homogeneity entirety of reaction chamber due to the closedown of each air outlet, process variable is too much, is thus unfavorable for the stability contorting of technique, and the validity of this regulative mode and efficiency are not high, be difficult to meet continuous print production requirement.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of diffuser and semiconductor processing equipment, it not only can improve the flow distribution evenness in reaction chamber, and validity and the efficiency of adjusting gas flow can be improved, thus process efficiency can be improved.
A kind of diffuser is provided for realizing object of the present invention, it comprises inlet mouth and inlet plenum, described inlet plenum is used for the top of the reactant gases autoreaction chamber flowed out from described inlet mouth to be delivered in reaction chamber, it is characterized in that, described inlet plenum comprises the even gas-bearing formation of N level, N be greater than 1 integer; Wherein, the 1st grade of even gas-bearing formation comprises 1 subelement, for the reactant gases from described inlet mouth is become at least two shunt along the direction uniformly distributing perpendicular to transport of reactant gases body; I-th grade of even gas-bearing formation comprises multiple subelement, and the number sub-cells in i-th grade of even gas-bearing formation equals the summation of the shunt quantity of being distributed by subelements all in the i-th-1 grade even gas-bearing formation, and each subelement in i-th grade of even gas-bearing formation correspondingly by each point of curb distributed by all subelement in the i-th-1 grade even gas-bearing formation perpendicular to transport of reactant gases body direction again uniformly distributing become at least two shunt, i=2,3,, N; In the even gas-bearing formation of N level, all subelements are used for being delivered to by each distribution separately in described reaction chamber along separate routes.
Wherein, the even gas-bearing formation of described N level vertically transport of reactant gases body step by step; Or, the even gas-bearing formation of 1st ~ N-1 level transport of reactant gases body step by step in the horizontal direction, and the even gas-bearing formation of N level vertically transport of reactant gases body; And in i-th grade of even gas-bearing formation, the shunt quantity of being distributed by each subelement is two.
Wherein, the even gas-bearing formation of 1st ~ N-1 level transport of reactant gases body step by step in the horizontal direction, and in the even gas-bearing formation of 1st ~ N-1 level, the shunt quantity of being distributed by each subelement is two; The even gas-bearing formation of N level vertically transport of reactant gases body, and in the even gas-bearing formation of N level, the shunt quantity of being distributed by each subelement is at least two, and be even number.
Wherein, the even gas-bearing formation of described N level vertically transport of reactant gases body step by step, and each subelement at least in the even gas-bearing formation of one-level also comprises a blast fence, in order to play inhibition along separate routes in the even gas-bearing formation of upper level one to one with the subelement of the even gas-bearing formation of the corresponding levels; Further, for the even gas-bearing formation being provided with described blast fence, the shunt quantity of being distributed by each subelement is at least two, and is even number; For the even gas-bearing formation not arranging described blast fence, the shunt quantity of being distributed by each subelement is two.
Wherein, the even gas-bearing formation of described N level vertically transport of reactant gases body step by step, and the shunt quantity of being distributed by each subelement is at least three; Wherein, in the 1st grade of even gas-bearing formation, described at least three shunt are evenly distributed on around described inlet mouth periphery circumferentially; At least three shunt distributed by each subelement in i-th grade of even gas-bearing formation are evenly distributed in the i-th-1 grade even gas-bearing formation and are looped around the shunt periphery corresponding with this subelement circumferentially; In the even gas-bearing formation of N level, all subelements are used for being delivered to by each distribution separately in described reaction chamber along separate routes.
Wherein, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along the even gas-bearing formation transport of reactant gases body at its place sets gradually, and two air outlets are arranged at intervals with on described shunting daughter board, described two air outlets are connected with the sub-chamber of described uniform flow, and be uniformly distributed along the direction perpendicular to transport of reactant gases body relative to the sub-chamber of described uniform flow, and symmetrical about the medullary ray in the sub-chamber of this uniform flow; Wherein, described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow; In the i-th-1 grade even gas-bearing formation, each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it; Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber.
Wherein, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along the even gas-bearing formation transport of reactant gases body at its place sets gradually, and at least two air outlets are arranged at intervals with on described shunting daughter board, the quantity of described air outlet is equal with the shunt quantity of being distributed by this subelement; Described at least two air outlets are connected with the sub-chamber of described uniform flow, and are uniformly distributed along the direction perpendicular to transport of reactant gases body relative to the sub-chamber of described uniform flow, and symmetrical about the medullary ray in the sub-chamber of this uniform flow; Wherein, described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow; In the i-th-1 grade even gas-bearing formation, the summation of air outlet quantity equals the summation of uniform flow chamber quantity in i-th grade of even gas-bearing formation, and each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly in the i-th-1 grade even gas-bearing formation, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it; Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber.
Wherein, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along the even gas-bearing formation transport of reactant gases body at its place sets gradually, and at least two air outlets are arranged at intervals with on described shunting daughter board, the quantity of described air outlet is equal with the shunt quantity of being distributed by this subelement; Described at least two air outlets are connected with the sub-chamber of described uniform flow, and are uniformly distributed along the direction perpendicular to transport of reactant gases body relative to the sub-chamber of described uniform flow, and symmetrical about the medullary ray in the sub-chamber of this uniform flow; Wherein, described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow; In the i-th-1 grade even gas-bearing formation, the summation of air outlet quantity equals the summation of uniform flow chamber quantity in i-th grade of even gas-bearing formation, and each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly in the i-th-1 grade even gas-bearing formation, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it; Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber; Described blast fence is arranged in the sub-chamber of described uniform flow, and is positioned at relative position, air outlet that chamber sub-with this uniform flow connect; And on the direction perpendicular to transport of reactant gases body, the length of described blast fence and the width in the sub-chamber of described uniform flow suitable; The width of described blast fence is suitable with the diameter of the air outlet be connected with the sub-chamber of this uniform flow in the even gas-bearing formation of upper level.
Preferably, the surface that described blast fence is relative with described air outlet is plane, arc convex or the conical surface.
Wherein, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along transport of reactant gases body sets gradually, and at least three air outlets are provided with on described shunting daughter board, described at least three air outlets are connected with the sub-chamber of described uniform flow, and be evenly distributed on around the sub-chamber of this uniform flow medullary ray circumferentially; Wherein, described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow; In the i-th-1 grade even gas-bearing formation, each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it; Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber.
Preferably, each subelement at least in the even gas-bearing formation of one-level also comprises a blast fence, in order to play inhibition along separate routes in the even gas-bearing formation of upper level one to one with the subelement of the even gas-bearing formation of the corresponding levels.
Preferably, the quantity of described inlet mouth is one or more, and multiple described inlet mouth is arranged in order along the direction perpendicular to transport of reactant gases body; The quantity of described inlet plenum is corresponding with the quantity of described inlet mouth, and the reactant gases flowed out from described inlet mouth is delivered in reaction chamber by described inlet plenum correspondingly.
Preferably, the air outlet diameter in even gas-bearing formation at the corresponding levels is less than the interval between adjacent two air outlets of corresponding in the even gas-bearing formation of next stage.
Preferably, for each subelement in the even gas-bearing formation of peer, be less than or greater than corresponding to the air outlet diameter in each subelement of described reaction chamber both sides of the edge corresponding to the air outlet diameter in each subelement in the middle part of described reaction chamber, or, identical corresponding to the air outlet diameter in each subelement of reaction chamber different positions.
Preferably, from the 1st grade of even gas-bearing formation to the even gas-bearing formation of N level, the diameter of described air outlet reduces step by step by preset ratio, and/or the interval between two air outlets adjacent in even gas-bearing formation at the same level reduces step by step by preset ratio.
Preferably, described air outlet is circular clear opening, square clear opening, round taper hole or square tapered hole.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment, and it comprises reaction chamber and for providing the diffuser of reactant gases to described reaction chamber, described diffuser have employed above-mentioned diffuser provided by the invention.
The present invention has following beneficial effect:
Diffuser provided by the invention, first the reactant gases from inlet mouth is become at least two shunt along the direction uniformly distributing perpendicular to transport of reactant gases body by the subelement in the 1st grade of even gas-bearing formation by it; Then by each subelement in i-th grade of even gas-bearing formation correspondingly by each point of curb distributed by all subelement in the i-th-1 grade even gas-bearing formation perpendicular to transport of reactant gases body direction again uniformly distributing become at least two shunt, finally will be delivered in reaction chamber along separate routes by each distribution separately by all subelements in the even gas-bearing formation of N level, wherein, i=2,3,, N, N be greater than 1 integer.Because every grade of even gas-bearing formation is, by each subelement, uniformly distributing is again carried out in the corresponding with it shunt distributed by the even gas-bearing formation of upper level, namely, each subelement is all single shunt reallocated, this be distributed into compared with multiple shunt by disposable for single channel gas, can jet effect be overcome, thus the flow distribution evenness in reaction chamber can be improved.In addition, diffuser provided by the invention regulates separately the flow of each road induction trunk without using variable valve, and only rely on self structure can improve flow distribution evenness in reaction chamber, thus validity and the efficiency of adjustment can be improved, and then can process efficiency be improved.
Semiconductor processing equipment provided by the invention, it, by adopting diffuser provided by the invention, not only can improve the flow distribution evenness in reaction chamber, and can improve validity and the efficiency of adjusting gas flow, thus can improve process efficiency.
Accompanying drawing explanation
Fig. 1 is the sectional view of existing semiconductor processing equipment;
The schematic diagram of the diffuser that Fig. 2 A provides for first embodiment of the invention;
The sectional view of the diffuser that Fig. 2 B provides for first embodiment of the invention;
Fig. 2 C is the sectional view along A-A line in Fig. 2 B;
The sectional view of the diffuser that the variant embodiment that Fig. 2 D is first embodiment of the invention provides;
The schematic diagram of the diffuser that another variant embodiment that Fig. 2 E is first embodiment of the invention provides;
The schematic diagram of the diffuser that Fig. 3 A provides for second embodiment of the invention;
The sectional view of the diffuser that Fig. 3 B provides for second embodiment of the invention;
Fig. 3 C is the sectional view along A-A line in Fig. 3 B;
The schematic diagram of the diffuser that Fig. 4 A provides for third embodiment of the invention;
The sectional view of the diffuser that Fig. 4 B provides for third embodiment of the invention;
The schematic diagram of the diffuser that Fig. 5 A provides for fourth embodiment of the invention;
The sectional view of the diffuser that Fig. 5 B provides for fourth embodiment of the invention;
Fig. 5 C is the sectional view along B-B line in Fig. 5 B;
Fig. 6 is the schematic shapes on the surface that blast fence is relative with air outlet;
The schematic diagram of the diffuser that Fig. 7 A provides for fifth embodiment of the invention;
Fig. 7 B is the vertical view along I-I line in Fig. 7 A;
Fig. 7 C is the vertical view along II-II line in Fig. 7 A; And
Fig. 7 D is the sectional view along C-C line in Fig. 7 B and Fig. 7 C.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, diffuser provided by the invention and semiconductor processing equipment are described in detail.
First embodiment
The schematic diagram of the diffuser that Fig. 5 A provides for first embodiment of the invention.Refer to Fig. 5 A, diffuser comprises inlet mouth 20 and inlet plenum 100, the two is all positioned at the top of reaction chamber 50, wherein, inlet plenum 100 for by the reactant gases flowed out from inlet mouth 20 vertically (Y-direction) be delivered in reaction chamber 50.So-called vertical direction, refers to the direction perpendicular to the workpiece to be machined surface be placed in reaction chamber 50; So, the X-direction perpendicular to Y-direction is perpendicular to transport of reactant gases body and is parallel to the direction on the workpiece to be machined surface in reaction chamber 50.In the process of carrying out technique, the top of reactant gases autoreaction chamber 50 vertically flows in reaction chamber 50, and when arriving workpiece to be machined surface, with its generation chemical reaction, reacted residual gas is discharged with the bottom of carrier gas autoreaction chamber 50.
It should be noted that, the orthographicprojection shape of cavity in its horizontal plane (plane be parallel to each other with X-direction) of reaction chamber can be circular, square or rectangle, and wherein, for the reaction chamber of circle, then X-direction refers to that it is radial; For reaction chamber that is square or rectangle, then X-direction refers to its geometric center lines or direction, diagonal lines place.
In the present embodiment, this inlet plenum 100 comprises the even gas-bearing formation of N level, N=4, and the even gas-bearing formation of N level is along Y-direction transport of reactant gases body step by step.Wherein, as shown in Figure 2 A, the 1st grade of even gas-bearing formation comprises 1 subelement 41, for by the reactant gases from inlet mouth 20 in X direction uniformly distributing become two shunt; 2nd grade of even gas-bearing formation comprise 2 subelements, 42,2 subelements 42 for correspondingly by two shunt distributed by the subelement 41 in the 1st grade of even gas-bearing formation in X direction again uniformly distributing become two shunt, finally obtain 4 shunt altogether; The even gas-bearing formation of 3rd level comprise 4 subelements, 43,4 subelements 43 for correspondingly by 4 shunt distributed by 2 subelements 42 in the 2nd grade of even gas-bearing formation in X direction again uniformly distributing become two shunt, final obtain 8 shunt altogether; 4th grade of even gas-bearing formation comprises 8 subelements 44,8 subelements 44 for correspondingly by 8 shunt distributed by 4 subelements 43 in the even gas-bearing formation of 3rd level in X direction again uniformly distributing become two shunt, final acquisition is 16 shunt altogether, then these 16 shunt are delivered in reaction chamber 50.
As from the foregoing, in 2nd ~ 4 grades of even gas-bearing formations, number sub-cells in i-th grade of even gas-bearing formation equals the summation of the shunt quantity of being distributed by subelements all in the i-th-1 grade even gas-bearing formation, that is, the shunt quantity of being distributed by each subelement is two, and each subelement in i-th grade of even gas-bearing formation correspondingly by each point of curb distributed by subelements all in the i-th-1 grade even gas-bearing formation perpendicular to transport of reactant gases body direction again uniformly distributing become two shunt, i=2,3 ..., N.Because every grade of even gas-bearing formation is, by each subelement, uniformly distributing is again carried out in the corresponding with it shunt distributed by the even gas-bearing formation of upper level, namely, each subelement is all single shunt reallocated, and the shunt quantity of being distributed by each subelement is 2, final acquisition is 16 shunt altogether, this be distributed into compared with 16 shunt by disposable for single channel gas, can jet effect be overcome, thus the flow distribution evenness in reaction chamber can be improved.
Below the structure of the diffuser with above-mentioned functions is described in detail.Particularly, the sectional view of diffuser that provides for first embodiment of the invention of Fig. 2 B.Fig. 2 C is the sectional view along A-A line in Fig. 2 B.See also Fig. 2 B and Fig. 2 C, in the 1st grade of even gas-bearing formation, subelement 41 comprises the sub-chamber 21 of the uniform flow set gradually along Y-direction and shunting daughter board 31, and inlet mouth 20 is connected with the sub-chamber 21 of uniform flow, and is positioned at the center position in the sub-chamber 21 of this uniform flow; Shunting daughter board 31 is arranged at intervals with two air outlets 311, two air outlets 311 (upper end) are connected with the sub-chamber 21 of uniform flow, and be uniformly distributed in X direction relative to the sub-chamber 21 of uniform flow, and symmetrical about the sub-chamber 21 of this uniform flow medullary ray in the Y direction.In the process of inlet plenum 100 transport of reactant gases body, the single channel reactant gases from inlet mouth 20 flows in the sub-chamber 21 of uniform flow, and flows out after being become two-way by two air outlet 311 uniformly distributings.
In the 2nd grade of even gas-bearing formation, each subelement 42 comprises the sub-chamber 22 of the uniform flow set gradually along Y-direction and shunting daughter board 32, shunting daughter board 32 is arranged at intervals with two air outlets 321, two air outlets 321 (upper end) are connected with the sub-chamber 22 of uniform flow, and be uniformly distributed in X direction relative to the sub-chamber 22 of uniform flow, and symmetrical about the sub-chamber 22 of this uniform flow medullary ray in the Y direction.And, two air outlets 311 (lower end) in 1st grade of even gas-bearing formation are connected with the sub-chamber 22 of two uniform flows in the 2nd grade of even gas-bearing formation correspondingly, and each air outlet 311 in the 1st grade of even gas-bearing formation is arranged in the center position in the 2nd grade of even gas-bearing formation chamber 22 of uniform flow corresponding with it.In the process of inlet plenum 100 transport of reactant gases body, the reactant gases that two air outlets 311 in the 1st grade of even gas-bearing formation are flowed out flows in the sub-chamber 22 of two uniform flows in the 2nd grade of even gas-bearing formation correspondingly, namely, air outlet 311 in 1st grade of even gas-bearing formation can be considered as the inlet mouth in the sub-chamber 22 of uniform flow in the 2nd grade of even gas-bearing formation, then, reaction gas in the sub-chamber of each uniform flow 22 know from experience by two air outlets 311 being connected with the sub-chamber 22 of this uniform flow again uniformly distributing flow out after becoming two-way.
In the even gas-bearing formation of 3rd level, each subelement 43 comprises the sub-chamber 23 of the uniform flow set gradually along Y-direction and shunting daughter board 33, shunting daughter board 33 is arranged at intervals with two air outlets 331, two air outlets 331 (upper end) are connected with the sub-chamber 23 of uniform flow, and be uniformly distributed in X direction relative to the sub-chamber 23 of uniform flow, and symmetrical about the sub-chamber 23 of this uniform flow medullary ray in the Y direction.And, in 2nd grade of even gas-bearing formation, 4 air outlets 321 (lower end) sub-chamber 23 of 4 uniform flows correspondingly in gas-bearing formation even with 3rd level is connected, and each air outlet 321 in the 2nd grade of even gas-bearing formation is arranged in the center position in the even gas-bearing formation of the 3rd level chamber 23 of uniform flow corresponding with it.Easy understand, air outlet 321 in 2nd grade of even gas-bearing formation can be considered as the inlet mouth in the sub-chamber 23 of uniform flow in the even gas-bearing formation of 3rd level, and reactant gases from the 2nd grade of even gas-bearing formation flow into the process of the even gas-bearing formation of 3rd level and the above-mentioned process flowing into the 2nd grade of even gas-bearing formation from the 1st grade of even gas-bearing formation similar.
In the 4th grade of even gas-bearing formation, each subelement 44 comprises the sub-chamber 24 of the uniform flow set gradually along Y-direction and shunting daughter board 34, shunting daughter board 34 is arranged at intervals with two air outlets 341, two air outlets 341 (upper end) are connected with the sub-chamber 24 of uniform flow, and be uniformly distributed in X direction relative to the sub-chamber 24 of uniform flow, and symmetrical about the sub-chamber 24 of this uniform flow medullary ray in the Y direction.And, in the even gas-bearing formation of 3rd level, 8 air outlets 331 (lower end) are connected with the sub-chamber 24 of 8 uniform flows in the 4th grade of even gas-bearing formation correspondingly, and each air outlet 331 in the even gas-bearing formation of 3rd level is arranged in the center position in the 4th grade of even gas-bearing formation chamber 24 of uniform flow corresponding with it.Each air outlet 341 in the even gas-bearing formation of N level is connected with reaction chamber 50.Easy understand, air outlet 331 in the even gas-bearing formation of 3rd level can be considered as the inlet mouth in the sub-chamber 24 of uniform flow in the 4th grade of even gas-bearing formation, and reactant gases from the even gas-bearing formation of 3rd level flow into the process of the 4th grade of even gas-bearing formation and the above-mentioned process flowing into the 2nd grade of even gas-bearing formation from the 1st grade of even gas-bearing formation similar.
By the sub-chamber of above-mentioned uniform flow, the pressure of reactant gases and flow velocity can be made to be released, thus to serve the effect of transition and even gas.And, because the inlet mouth of two in each subelement is uniformly distributed in X direction relative to the sub-chamber of the uniform flow in this subelement, and it is symmetrical about the sub-chamber of this uniform flow medullary ray in the Y direction, and each air outlet is arranged in the center position in the even gas-bearing formation of the next stage chamber of uniform flow corresponding with it in even gas-bearing formation at the corresponding levels, this makes reactant gases flow into after in the sub-chamber of uniform flow be connected with this air outlet in the even gas-bearing formation of next stage, two air outlets in the sub-chamber of this uniform flow can be diffused to simultaneously, thus single channel gas uniform can be distributed into two shunt, and the flow velocity of these two shunt is identical, and then the air flow method that can overcome jet effect and realize flowing out from two air outlets is even.
In addition, because the number sub-cells in i-th grade of even gas-bearing formation equals the summation of the shunt quantity of being distributed by subelements all in the i-th-1 grade even gas-bearing formation, and each subelement in i-th grade of even gas-bearing formation correspondingly by distributed by all subelement in the i-th-1 grade even gas-bearing formation each along separate routes in X direction again uniformly distributing become two shunt, i=2,3, N, this makes the progression of even gas-bearing formation larger, the quantity of subelement is more, and the summation of the shunt quantity be distributed into by all subelements is more, that is, the gas circuit quantity summation of i-th grade of even gas-bearing formation equals 2
i-1, thus the multiplication step by step of quantity along separate routes can be realized, finally can obtain multiple shunt equally distributed relative to reaction chamber 50.Easy understand, the diffuser provided due to the present embodiment is uniformly distributing step by step by the even gas-bearing formation of N level and obtains uniform multiple shunt, thus this diffuser only relies on self structure can improve flow distribution evenness in reaction chamber, and the flow of each road induction trunk is regulated separately without using variable valve, thus validity and the efficiency of adjustment can be improved, and then process efficiency can be improved.
In the present embodiment, the set-up mode of the sub-chamber of the uniform flow in each subelement and shunting daughter board is specially: in the cavity of inlet plenum 100, be arranged at intervals with four layers of flat board along Y-direction, this cavity is separated into four-level space by four flat boards, and every sheaf space and be positioned at its downstream and the even gas-bearing formation of one deck adjacent with it flat board composition one-level, four-level space and four layers of flat board form 4 grades of even gas-bearing formations altogether.Wherein, in the 1st grade of even gas-bearing formation, the sub-chamber 21 of the uniform flow in subelement 41 is the first layer space, and it is dull and stereotyped that shunting daughter board 31 is the first layer adjacent with this first layer space; In 2nd ~ 4 grades of even gas-bearing formations, adjacent two subelements in every grade of even gas-bearing formation are separated by division plate 11, namely, at least one division plate 11 is provided with in every sheaf space, and multiple division plate 11 is arranged at interval in X direction, thus this sheaf space is separated into multiple subspace as the sub-chamber of uniform flow, the flat plate separation adjacent with this sheaf space is become multiple flat plate section as shunting daughter board simultaneously, the quantity of the quantity of this flat plate section and position and subspace and position one_to_one corresponding, and each subelement is made up of every sub spaces and flat plate section corresponding with it.Such as, in the 2nd grade of even gas-bearing formation, the center position of the 2nd sheaf space is provided with a division plate 11, thus this sheaf space is separated into two sub-chambeies 22 of uniform flow, become two to shunt daughter board 32 flat plate separation adjacent with this sheaf space simultaneously.
Preferably, in certain grade of even gas-bearing formation, if the spacing between two air outlets adjacent on each shunting daughter board is less, then can save division plate 11, that is, be communicated with between two adjacent subelements, such as, as shown in Figure 2 D, in the 4th grade of even gas-bearing formation, division plate 11 is not set.
It should be noted that, in the present embodiment, the progression of even gas-bearing formation is 4 grades, that is, N=4, but the present invention is not limited thereto, and in actual applications, the progression of even gas-bearing formation can also be 2 grades, more than 3 grades or 5 grades, that is, N be greater than 1 integer.
In actual applications, preferably, air outlet diameter in even gas-bearing formation at the corresponding levels is less than the interval between adjacent two air outlets of corresponding in the even gas-bearing formation of next stage, to ensure mutually to stagger in the air outlet in even gas-bearing formation at the corresponding levels and the air outlet in the even gas-bearing formation of next stage on the direction of transport of reactant gases body, thus the air flow method inequality because partial reaction gas directly causes from the air outlet outflow the even gas-bearing formation of next stage can be avoided.
In actual applications, for each subelement in the even gas-bearing formation of peer, can be less than or greater than corresponding to the air outlet diameter in each subelement of reaction chamber both sides of the edge corresponding to the air outlet diameter in each subelement in the middle part of reaction chamber, or, also can make corresponding to the air outlet diameter in each subelement of reaction chamber different positions identical.
And from the 1st grade of even gas-bearing formation to the even gas-bearing formation of N level, the diameter of air outlet can reduce step by step by by preset ratio, and/or the interval between adjacent two air outlets also can reduce by preset ratio step by step.
In addition, air outlet can be circular or square clear opening, and now the diameter of air outlet refers to circular diameter or the square length of side; Or air outlet can be also round taper hole or square tapered hole, and now the diameter of air outlet refers to the maximal side of conical maximum diameter or square taper.Certainly, in actual applications, air outlet can also adopt other arbitrary structures as the case may be.
It should be noted that further, in this enforcement, the quantity of inlet mouth 20 is one, and the quantity of inlet plenum is one, but the present invention is not limited thereto, in actual applications, according to the air inlet port dimensions passed through for supplied gas of reaction chamber, the inlet mouth quantity of diffuser can also be multiple, and multiple inlet mouth is arranged in order in X direction; The quantity of inlet plenum is corresponding with the quantity of inlet mouth, and the reactant gases flowed out from inlet mouth is delivered in reaction chamber by inlet plenum correspondingly.
Such as, as shown in Figure 2 E, the quantity of inlet mouth is two, is respectively inlet mouth 201 and 202 parallel with one another in X direction, with the two correspondingly, the quantity of inlet plenum is two, is respectively inlet plenum 101 and 102.Wherein, inlet plenum 101 and 102 is arranged side by side in X direction relative to the inlet mouth of reaction chamber 50, and the structure of the two is identical.In the process of transmission reactant gases, the reactant gases flowed out from inlet pipe 60 transfers in inlet plenum 101 and 102 by inlet mouth 201 and 202 respectively correspondingly, be distributed into multiple shunt step by step by inlet plenum 101 and 102 respectively again, and flow in reaction chamber 50 simultaneously.
Second embodiment
The schematic diagram of the diffuser that Fig. 3 A provides for second embodiment of the invention.Refer to Fig. 3 A, the diffuser that the present embodiment provides is compared with above-mentioned first embodiment, its difference is only: in the present embodiment, the even gas-bearing formation of 1st ~ N-1 level transport of reactant gases body step by step in the horizontal direction, and the even gas-bearing formation of N level vertically transport of reactant gases body.
Particularly, the sectional view of diffuser that provides for second embodiment of the invention of Fig. 3 B.Fig. 3 C is the sectional view along A-A line in Fig. 3 B.See also Fig. 3 B and 3C, for the even gas-bearing formation of 1st ~ N-1 level in inlet plenum 100, it is compared with the even gas-bearing formation of 1st ~ N-1 level in above-mentioned first embodiment, the structure of the two is identical, and be only that arragement direction is different, that is, the even gas-bearing formation of 1st ~ N-1 level in the present embodiment is along Z-direction transport of reactant gases body step by step, Z-direction and X-direction are positioned at same plane, and mutually vertical with X-direction with Y-direction respectively.For the even gas-bearing formation of N level, it is compared with the even gas-bearing formation of N level in above-mentioned first embodiment, and the structure of the two is all identical with arragement direction, that is, along Y-direction transport of reactant gases body.
In the present embodiment, a turning is there is between the even gas-bearing formation of N-1 level and the even gas-bearing formation of N level, namely, air outlet 341 in the even gas-bearing formation of N level is positioned at the below in the sub-chamber 24 of uniform flow, and the air outlet 331 in the even gas-bearing formation of N-1 level is arranged in the side (right side) in the sub-chamber 24 of uniform flow of the even gas-bearing formation of N level.In the process of transport of reactant gases body, the reactant gases that air outlet 331 in the even gas-bearing formation of sub-N-1 level is flowed out is along Z-direction towards in the sub-chamber 24 of uniform flow in the even gas-bearing formation of left inflow N level, and converting flow direction, the air outlet 341 in the even gas-bearing formation of N level flows in reaction chamber down along Y-direction.
By the turning between the even gas-bearing formation of N-1 level and the even gas-bearing formation of N level, can play and make air-flow cannot continue the inhibition flowed along current direction, thus can enable air-flow conversion flow direction while diffusely evenly, and then even gas effect can be improved further, thus the distributing homogeneity of air-flow can be improved.
Other structure and functions of the diffuser that the present embodiment provides are identical with above-mentioned first embodiment, do not repeat them here.
3rd embodiment
The schematic diagram of the diffuser that Fig. 4 A provides for third embodiment of the invention.Refer to Fig. 4 A, the diffuser that the present embodiment provides is compared with above-mentioned second embodiment, its difference is only: N=3, and in the even gas-bearing formation of 3rd level, the shunt quantity of being distributed by each subelement is four, that is, each point of curb distributed by all subelement in the 2nd grade of even gas-bearing formation is distributed into four shunt perpendicular to the direction Direct Uniform of transport of reactant gases body by each subelement 43 in the even gas-bearing formation of 3rd level correspondingly.
Particularly, the sectional view of diffuser that provides for third embodiment of the invention of Fig. 4 B.Refer to Fig. 4 B, for grade even gas-bearing formation of 1st ~ 2 in inlet plenum 200, they are compared with 1st ~ 2 grades of even gas-bearing formations in above-mentioned second embodiment, and the structure of the two is all identical with arragement direction.
And, in the present embodiment, each subelement 43 in the even gas-bearing formation of 3rd level comprises four air outlets 331, four air outlets 331 are uniformly distributed in X direction relative to the sub-chamber 23 of uniform flow, and it is symmetrical about the medullary ray in the sub-chamber 23 of this uniform flow, that is, the center position that each air outlet 321 in the even gas-bearing formation in the 331,2nd grade, two air outlets is arranged in the even gas-bearing formation of the 3rd level chamber 23 of uniform flow corresponding is with it provided with respectively symmetrically in the medullary ray both sides in the sub-chamber 23 of this uniform flow.
Thus, same between the even gas-bearing formation of 3rd level with the 2nd grade of even gas-bearing formation exist a turning, because this can play the effect hindering air-flow to continue flowing, this make air-flow can conversion flow direction while diffusely evenly, even if thus be directly distributed into four shunt by single channel air-flow, also can obtain uniform air flow method.In addition, by being directly distributed into four shunt by single channel air-flow, under the identical prerequisite of the shunt quantity summation of the in the end even gas-bearing formation of one deck, the progression of even gas-bearing formation can also be reduced, thus the volume of inlet plenum can be reduced, simplify the structure of inlet plenum.
It should be noted that, in the present embodiment, in the even gas-bearing formation of N level, the shunt quantity of being distributed by each subelement is four, but the present invention is not limited thereto, in actual applications, in the even gas-bearing formation of N level, the shunt quantity of being distributed by each subelement can be set as two or more as the case may be, and this shunt quantity is even number.
Other structure and functions of the diffuser that the present embodiment provides are identical with above-mentioned second embodiment, do not repeat them here.
4th embodiment
The schematic diagram of the diffuser that Fig. 5 A provides for fourth embodiment of the invention.Refer to Fig. 5 A, the diffuser that the present embodiment provides is compared with above-mentioned first embodiment, its difference is only: in the present embodiment, N=3, and in the even gas-bearing formation of 3rd level, each subelement also comprises a blast fence 40, in order to play inhibition along separate routes in the 2nd grade of even gas-bearing formation one to one with the subelement of the even gas-bearing formation of 3rd level; And in the even gas-bearing formation of 3rd level, the shunt quantity of being distributed by each subelement is four, that is, each subelement 43 in the even gas-bearing formation of 3rd level correspondingly by distributed by all subelement in the 2nd grade of even gas-bearing formation each along separate routes in X direction Direct Uniform be distributed into four shunt.
Particularly, the sectional view of diffuser that provides for fourth embodiment of the invention of Fig. 5 B.Fig. 5 C is the sectional view along B-B line in Fig. 5 B.See also Fig. 5 B and Fig. 5 C, for grade even gas-bearing formation of 1st ~ 2 in inlet plenum 300, they are compared with 1st ~ 2 grades of even gas-bearing formations in above-mentioned first embodiment, and the structure of the two is all identical with arragement direction.
And, in the present embodiment, each subelement 43 in the even gas-bearing formation of 3rd level comprises four air outlets 331, four air outlets 331 are uniformly distributed in X direction relative to the sub-chamber 23 of uniform flow, and it is symmetrical about the medullary ray in the sub-chamber 23 of this uniform flow, that is, the center position that each air outlet 321 in the even gas-bearing formation in the 331,2nd grade, two air outlets is arranged in the even gas-bearing formation of the 3rd level chamber 23 of uniform flow corresponding is with it provided with respectively symmetrically in the medullary ray both sides in the sub-chamber 23 of this uniform flow.
In the even gas-bearing formation of 3rd level, blast fence 40 is arranged in the sub-chamber 23 of each uniform flow, and is arranged in the 2nd grade of even gas-bearing formation position relative with the air outlet 321 that the sub-chamber of this uniform flow 23 connects; And in the X direction, the width of blast fence 40 and the diameter of air outlet 321 suitable, as shown in Figure 5 B; Be positioned at same plane with X-direction, and in perpendicular Z-direction, the width in the length of blast fence 40 and the sub-chamber of uniform flow 23 is suitable, as shown in Figure 5 C.
By blast fence 40, inhibition can be played to the reactant gases that air outlet on the other side in the even gas-bearing formation of upper level is flowed out, the effect at this inhibition and above-mentioned turning is similar, air-flow can be made cannot to continue to flow along current direction, and conversion flow direction while diffusely evenly, even if thus be directly distributed into four shunt by single channel air-flow, also can obtain uniform air flow method.In addition, by being directly distributed into four shunt by single channel air-flow, under the identical prerequisite of the shunt quantity summation of the in the end even gas-bearing formation of one deck, the progression of even gas-bearing formation can also be reduced, thus the volume of inlet plenum can be reduced, simplify the structure of inlet plenum.
Preferably, the surface that blast fence 40 is relative with air outlet can be plane, as shown in Figure 6 arc convex or the conical surface etc.Easy understand, difform surface can affect the direction that blast fence hinders air-flow.
It should be noted that, in the present embodiment, in the even gas-bearing formation of N level, the shunt quantity of being distributed by each subelement is four, but the present invention is not limited thereto, in actual applications, in the even gas-bearing formation of N level, the shunt quantity of being distributed by each subelement can be set as two or more as the case may be, and this shunt quantity is even number.
Also it should be noted that, in the present embodiment, only in the even gas-bearing formation of 3rd level, be provided with blast fence 40, but the present invention is not limited thereto, in actual applications, can the even gas-bearing formation of N level (N be greater than 1 integer) at least one-level in each subelement a blast fence is set, and, for the even gas-bearing formation being provided with this blast fence, the shunt quantity of being distributed by each subelement is at least two, and this shunt quantity is even number; For the even gas-bearing formation not arranging this blast fence, the shunt quantity of being distributed by each subelement is two.
Other structure and functions of the diffuser that the present embodiment provides are identical with above-mentioned first embodiment, do not repeat them here.
5th embodiment
The schematic diagram of the diffuser that Fig. 7 A provides for fifth embodiment of the invention.Refer to Fig. 7 A, the diffuser that the present embodiment provides is compared with above-mentioned first embodiment, its difference is only: in the present embodiment, the even gas-bearing formation of N level is along Y-direction transport of reactant gases body step by step, and the shunt quantity of being distributed by each subelement is three, and the arrangement mode of three shunt is different from above-mentioned first embodiment, namely, in the 1st grade of even gas-bearing formation, three shunt are evenly distributed on around inlet mouth 20 periphery circumferentially, at least two shunt distributed by each subelement in i-th grade of even gas-bearing formation are evenly distributed in the i-th-1 grade even gas-bearing formation and are looped around the shunt periphery corresponding with this subelement circumferentially.
Particularly, Fig. 7 B is the vertical view along I-I line in Fig. 7 A.Fig. 7 C is the vertical view along II-II line in Fig. 7 A.Fig. 7 D is the sectional view along C-C line in Fig. 7 B and Fig. 7 C.See also Fig. 7 B-7D, in the 1st grade of even gas-bearing formation, shunting daughter board 31 be provided with air outlet 311,311, three, three air outlets and be connected with the sub-chamber 21 of uniform flow, and be evenly distributed on around the sub-chamber 21 of this uniform flow medullary ray circumferentially, as shown in Figure 7 B.Easy understand, because inlet mouth 20 is connected with the sub-chamber 21 of uniform flow in the 1st grade of even gas-bearing formation, and be positioned at the center position in the sub-chamber of this uniform flow, thus three air outlet 311 uniform ring are around being positioned at this inlet mouth 20 periphery circumferentially centered by inlet mouth 20, thus the reactant gases uniformly distributing from inlet mouth 20 can be realized to become three shunt.
And each air outlet 311 is connected with the sub-chamber 22 of each uniform flow in the 2nd grade of even gas-bearing formation correspondingly in the 1st grade of even gas-bearing formation, and in the 1st grade of even gas-bearing formation, each air outlet 311 is arranged in the center position in the 2nd grade of even gas-bearing formation chamber 22 of uniform flow corresponding with it; 2nd grade of even gas-bearing formation comprise 3 subelements, 42,3 subelements 42 for correspondingly by three shunt distributed by the subelement 41 in the 1st grade of even gas-bearing formation again uniformly distributing become three shunt, finally obtain 9 shunt altogether.Particularly, corresponding to each subelement 42, shunting daughter board 32 is provided with air outlet 321,321, three, three air outlets and is connected with the sub-chamber 22 of the uniform flow corresponded, and be evenly distributed on around the sub-chamber 22 of this uniform flow medullary ray circumferentially, as seen in figure 7 c.Because each air outlet 311 in the 1st grade of even gas-bearing formation is arranged in the center position in the 2nd grade of even gas-bearing formation chamber 22 of uniform flow corresponding with it, thus three air outlets 321 of corresponding each subelement 42 correspondingly uniform ring around being positioned at this periphery, air outlet 311 circumferentially centered by each air outlet 311, thus can realize correspondingly the reactant gases uniformly distributing from each air outlet 311 being become three shunt.
By that analogy, in the i-th-1 grade even gas-bearing formation, each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of uniform flow corresponding with it; And on each shunting daughter board, be provided with three air outlets, three air outlets are connected with the sub-chamber of this uniform flow, and be evenly distributed on around the sub-chamber of this uniform flow medullary ray circumferentially.
Preferably, each subelement at least in the even gas-bearing formation of one-level also comprises a blast fence, in order to play inhibition along separate routes in the even gas-bearing formation of upper level one to one with the subelement of the even gas-bearing formation of the corresponding levels.Blast fence 40 in the structure and function of this blast fence and above-mentioned 4th embodiment is similar, particularly, in the even gas-bearing formation of any one-level being provided with blast fence, blast fence is arranged in the sub-chamber of each uniform flow, and is arranged in the even gas-bearing formation of the upper level position relative with the air outlet that the sub-chamber of this uniform flow connects; And in this air outlet circumferentially, the external diameter of blast fence and the diameter of air outlet suitable.In actual applications, on the uniform flow daughter board that the fixed form of suspention can be adopted to be fixed on by blast fence in the even gas-bearing formation of upper level.
By blast fence, inhibition can be played to the reactant gases that air outlet on the other side in the even gas-bearing formation of upper level is flowed out, thus air-flow can be made cannot to continue to flow along current direction, and while conversion flow direction diffusely evenly.
Preferably, the shape of the orthographicprojection shape of said flow baffle plate on the surface relative with air outlet and this air outlet is suitable, and said flow baffle plate can be plane, as shown in Figure 6 arc convex or the conical surface etc. on the surface relative with air outlet.
It should be noted that, in the present embodiment, the shunt quantity of being distributed by each subelement is three, but the present invention is not limited thereto, in actual applications, the shunt quantity of being distributed by each subelement is for can also be set as more than four as the case may be, and the shunt of more than four distributed by each subelement in i-th grade of even gas-bearing formation is evenly distributed in the i-th-1 grade even gas-bearing formation and is looped around the shunt periphery corresponding with this subelement circumferentially.
Other structure and functions of the diffuser that the present embodiment provides are identical with above-mentioned first embodiment, do not repeat them here.
As another technical scheme, the embodiment of the present invention also provides a kind of semiconductor processing equipment, and it comprises reaction chamber and for providing the diffuser of reactant gases to this reaction chamber, this diffuser have employed the diffuser that each embodiment above-mentioned provides.
The semiconductor processing equipment that the embodiment of the present invention provides, its diffuser provided by adopting the present invention's each embodiment above-mentioned, not only can improve the flow distribution evenness in reaction chamber, and validity and the efficiency of adjusting gas flow can be improved, thus can process efficiency be improved.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (17)
1. a diffuser, it comprises inlet mouth and inlet plenum, and described inlet plenum is used for the top of the reactant gases autoreaction chamber flowed out from described inlet mouth to be delivered in reaction chamber, it is characterized in that, described inlet plenum comprises the even gas-bearing formation of N level, N be greater than 1 integer; Wherein,
1st grade of even gas-bearing formation comprises 1 subelement, for the reactant gases from described inlet mouth is become at least two shunt along the direction uniformly distributing perpendicular to transport of reactant gases body; I-th grade of even gas-bearing formation comprises multiple subelement, and the number sub-cells in i-th grade of even gas-bearing formation equals the summation of the shunt quantity of being distributed by subelements all in the i-th-1 grade even gas-bearing formation, and each subelement in i-th grade of even gas-bearing formation correspondingly by each point of curb distributed by all subelement in the i-th-1 grade even gas-bearing formation perpendicular to transport of reactant gases body direction again uniformly distributing become at least two shunt, i=2,3,, N; In the even gas-bearing formation of N level, all subelements are used for being delivered to by each distribution separately in described reaction chamber along separate routes.
2. diffuser according to claim 1, is characterized in that, the even gas-bearing formation of described N level vertically transport of reactant gases body step by step; Or, the even gas-bearing formation of 1st ~ N-1 level transport of reactant gases body step by step in the horizontal direction, and the even gas-bearing formation of N level vertically transport of reactant gases body; And
In i-th grade of even gas-bearing formation, the shunt quantity of being distributed by each subelement is two.
3. diffuser according to claim 1, is characterized in that, the even gas-bearing formation of 1st ~ N-1 level transport of reactant gases body step by step in the horizontal direction, and in the even gas-bearing formation of 1st ~ N-1 level, the shunt quantity of being distributed by each subelement is two;
The even gas-bearing formation of N level vertically transport of reactant gases body, and in the even gas-bearing formation of N level, the shunt quantity of being distributed by each subelement is at least two, and be even number.
4. diffuser according to claim 1, it is characterized in that, the even gas-bearing formation of described N level vertically transport of reactant gases body step by step, and each subelement at least in the even gas-bearing formation of one-level also comprises a blast fence, in order to play inhibition along separate routes in the even gas-bearing formation of upper level one to one with the subelement of the even gas-bearing formation of the corresponding levels; Further,
For the even gas-bearing formation being provided with described blast fence, the shunt quantity of being distributed by each subelement is at least two, and is even number;
For the even gas-bearing formation not arranging described blast fence, the shunt quantity of being distributed by each subelement is two.
5. diffuser according to claim 1, is characterized in that, the even gas-bearing formation of described N level vertically transport of reactant gases body step by step, and the shunt quantity of being distributed by each subelement is at least three; Wherein,
In the 1st grade of even gas-bearing formation, described at least three shunt are evenly distributed on around described inlet mouth periphery circumferentially;
At least three shunt distributed by each subelement in i-th grade of even gas-bearing formation are evenly distributed in the i-th-1 grade even gas-bearing formation and are looped around the shunt periphery corresponding with this subelement circumferentially;
In the even gas-bearing formation of N level, all subelements are used for being delivered to by each distribution separately in described reaction chamber along separate routes.
6. diffuser according to claim 2, it is characterized in that, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along the even gas-bearing formation transport of reactant gases body at its place sets gradually, and two air outlets are arranged at intervals with on described shunting daughter board, described two air outlets are connected with the sub-chamber of described uniform flow, and be uniformly distributed along the direction perpendicular to transport of reactant gases body relative to the sub-chamber of described uniform flow, and symmetrical about the medullary ray in the sub-chamber of this uniform flow; Wherein,
Described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow;
In the i-th-1 grade even gas-bearing formation, each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it;
Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber.
7. diffuser according to claim 3, it is characterized in that, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along the even gas-bearing formation transport of reactant gases body at its place sets gradually, and at least two air outlets are arranged at intervals with on described shunting daughter board, the quantity of described air outlet is equal with the shunt quantity of being distributed by this subelement; Described at least two air outlets are connected with the sub-chamber of described uniform flow, and are uniformly distributed along the direction perpendicular to transport of reactant gases body relative to the sub-chamber of described uniform flow, and symmetrical about the medullary ray in the sub-chamber of this uniform flow; Wherein,
Described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow;
In the i-th-1 grade even gas-bearing formation, the summation of air outlet quantity equals the summation of uniform flow chamber quantity in i-th grade of even gas-bearing formation, and each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly in the i-th-1 grade even gas-bearing formation, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it;
Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber.
8. diffuser according to claim 4, it is characterized in that, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along the even gas-bearing formation transport of reactant gases body at its place sets gradually, and at least two air outlets are arranged at intervals with on described shunting daughter board, the quantity of described air outlet is equal with the shunt quantity of being distributed by this subelement; Described at least two air outlets are connected with the sub-chamber of described uniform flow, and are uniformly distributed along the direction perpendicular to transport of reactant gases body relative to the sub-chamber of described uniform flow, and symmetrical about the medullary ray in the sub-chamber of this uniform flow; Wherein,
Described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow; In the i-th-1 grade even gas-bearing formation, the summation of air outlet quantity equals the summation of uniform flow chamber quantity in i-th grade of even gas-bearing formation, and each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly in the i-th-1 grade even gas-bearing formation, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it; Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber;
Described blast fence is arranged in the sub-chamber of described uniform flow, and is positioned at relative position, air outlet that chamber sub-with this uniform flow connect; And on the direction perpendicular to transport of reactant gases body, the length of described blast fence and the width in the sub-chamber of described uniform flow suitable; The width of described blast fence is suitable with the diameter of the air outlet be connected with the sub-chamber of this uniform flow in the even gas-bearing formation of upper level.
9. diffuser according to claim 8, is characterized in that, the surface that described blast fence is relative with described air outlet is plane, arc convex or the conical surface.
10. diffuser according to claim 5, it is characterized in that, each subelement comprises the sub-chamber of uniform flow and shunting daughter board that the direction along transport of reactant gases body sets gradually, and at least three air outlets are provided with on described shunting daughter board, described at least three air outlets are connected with the sub-chamber of described uniform flow, and be evenly distributed on around the sub-chamber of this uniform flow medullary ray circumferentially; Wherein,
Described inlet mouth is connected with the sub-chamber of uniform flow in the 1st grade of even gas-bearing formation, and is positioned at the center position in the sub-chamber of this uniform flow;
In the i-th-1 grade even gas-bearing formation, each air outlet is connected with the sub-chamber of each uniform flow in i-th grade of even gas-bearing formation correspondingly, and in the i-th-1 grade even gas-bearing formation, each air outlet is arranged in the center position in i-th grade of even gas-bearing formation chamber of described uniform flow corresponding with it;
Each air outlet in the even gas-bearing formation of N level is connected with described reaction chamber.
11. diffusers according to claim 5 or 10, it is characterized in that, each subelement at least in the even gas-bearing formation of one-level also comprises a blast fence, in order to play inhibition along separate routes in the even gas-bearing formation of upper level one to one with the subelement of the even gas-bearing formation of the corresponding levels.
12. diffusers according to claim 1, is characterized in that, the quantity of described inlet mouth is one or more, and multiple described inlet mouth is arranged in order along the direction perpendicular to transport of reactant gases body;
The quantity of described inlet plenum is corresponding with the quantity of described inlet mouth, and the reactant gases flowed out from described inlet mouth is delivered in reaction chamber by described inlet plenum correspondingly.
13. diffusers according to claim 6-8 any one, is characterized in that, the air outlet diameter in even gas-bearing formation at the corresponding levels is less than the interval between adjacent two air outlets of corresponding in the even gas-bearing formation of next stage.
14. diffusers according to claim 6-8 any one, it is characterized in that, for each subelement in the even gas-bearing formation of peer, be less than or greater than corresponding to the air outlet diameter in each subelement of described reaction chamber both sides of the edge corresponding to the air outlet diameter in each subelement in the middle part of described reaction chamber, or, identical corresponding to the air outlet diameter in each subelement of reaction chamber different positions.
15. diffusers according to claim 14, it is characterized in that, from the 1st grade of even gas-bearing formation to the even gas-bearing formation of N level, the diameter of described air outlet reduces step by step by preset ratio, and/or the interval between two air outlets adjacent in even gas-bearing formation at the same level reduces step by step by preset ratio.
16. diffusers according to claim 6-10 any one, it is characterized in that, described air outlet is circular clear opening, square clear opening, round taper hole or square tapered hole.
17. 1 kinds of semiconductor processing equipments, it comprises reaction chamber and for providing the diffuser of reactant gases to described reaction chamber, it is characterized in that, described diffuser have employed the diffuser described in claim 1-16 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN105734675A (en) * | 2016-04-19 | 2016-07-06 | 温州巨亮光伏科技有限公司 | High-temperature diffusion furnace tube for wafer oxidization |
| CN107424895A (en) * | 2016-05-24 | 2017-12-01 | 北京北方华创微电子装备有限公司 | A kind of semiconductor equipment front end processing device |
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| WO2019015388A1 (en) * | 2017-07-17 | 2019-01-24 | 江苏鲁汶仪器有限公司 | Spray head for plasma etching system |
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| CN107424895A (en) * | 2016-05-24 | 2017-12-01 | 北京北方华创微电子装备有限公司 | A kind of semiconductor equipment front end processing device |
| CN107785283A (en) * | 2016-08-24 | 2018-03-09 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| CN107785283B (en) * | 2016-08-24 | 2020-07-17 | 北京北方华创微电子装备有限公司 | Heating chamber and semiconductor processing equipment |
| WO2019015388A1 (en) * | 2017-07-17 | 2019-01-24 | 江苏鲁汶仪器有限公司 | Spray head for plasma etching system |
| CN109576784A (en) * | 2017-09-29 | 2019-04-05 | 上海新昇半导体科技有限公司 | A kind of preparation method and device of SiC epitaxial layer |
| US11193205B2 (en) | 2017-12-12 | 2021-12-07 | Tokyo Electron Limited | Source material container |
| CN110016654B (en) * | 2017-12-12 | 2022-01-11 | 东京毅力科创株式会社 | Material container |
| CN110016654A (en) * | 2017-12-12 | 2019-07-16 | 东京毅力科创株式会社 | Material container |
| CN109559969A (en) * | 2018-11-28 | 2019-04-02 | 合肥如真空设备有限公司 | A kind of enhanced ion source |
| CN113330142A (en) * | 2018-11-28 | 2021-08-31 | 艾克斯特朗欧洲公司 | Gas inlet device for a CVD reactor |
| CN109487238A (en) * | 2018-12-17 | 2019-03-19 | 北京北方华创微电子装备有限公司 | Air inlet grill component and atomic layer deposition apparatus |
| TWI753451B (en) * | 2019-06-10 | 2022-01-21 | 大陸商中微半導體設備（上海）股份有限公司 | Gas regulating device and plasma etching equipment using the same |
| CN114214607A (en) * | 2021-12-16 | 2022-03-22 | 四川大学 | Gas shunting device and plasma processing equipment with same |
| CN114411249A (en) * | 2021-12-16 | 2022-04-29 | 徐州鑫晶半导体科技有限公司 | Gas distribution assembly and crystal growth device with same |
| CN114214607B (en) * | 2021-12-16 | 2022-10-18 | 四川大学 | Gas shunting device and plasma processing equipment with same |
| CN115233189A (en) * | 2022-07-22 | 2022-10-25 | 北京北方华创微电子装备有限公司 | Gas homogenizing device and semiconductor process equipment |
| CN115233189B (en) * | 2022-07-22 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Gas homogenizing device and semiconductor process equipment |
| WO2024017303A1 (en) * | 2022-07-22 | 2024-01-25 | 北京北方华创微电子装备有限公司 | Gas uniformizing device and semiconductor process equipment |
| CN116103640A (en) * | 2023-04-07 | 2023-05-12 | 上海陛通半导体能源科技股份有限公司 | ALD reaction cavity device and ALD film plating equipment |
| CN116103640B (en) * | 2023-04-07 | 2023-06-27 | 上海陛通半导体能源科技股份有限公司 | ALD reaction cavity device and ALD film plating equipment |
| CN117438277A (en) * | 2023-12-19 | 2024-01-23 | 北京北方华创微电子装备有限公司 | Uniform flow component, air inlet device and semiconductor device |
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| CN117599531A (en) * | 2024-01-22 | 2024-02-27 | 上海邦芯半导体科技有限公司 | Ion filtering device and semiconductor processing equipment |
| CN117599531B (en) * | 2024-01-22 | 2024-04-09 | 上海邦芯半导体科技有限公司 | Ion filtering device and semiconductor processing equipment |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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