CN105331953B - Inlet duct and semiconductor processing equipment - Google Patents
Inlet duct and semiconductor processing equipment Download PDFInfo
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- CN105331953B CN105331953B CN201410352844.2A CN201410352844A CN105331953B CN 105331953 B CN105331953 B CN 105331953B CN 201410352844 A CN201410352844 A CN 201410352844A CN 105331953 B CN105331953 B CN 105331953B
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Abstract
The present invention provides a kind of inlet duct and semiconductor processing equipment, it includes air inlet and inlet plenum, inlet plenum includes N grades of even gas-bearing formations, wherein, 1st grade of even gas-bearing formation includes 1 subelement, for the reaction gas from air inlet to be evenly distributed at least two branches along the direction perpendicular to conveying reaction gas；The even gas-bearing formation of i-stage includes multiple subelements, the each branch distributed by subelements all in (i-1)-th grade of even gas-bearing formation is evenly distributed at least two branches along the direction perpendicular to conveying reaction gas correspondingly by each subelement in the even gas-bearing formation of i-stage again, i=2, and 3, ..., N；Be used for will be by being delivered in reaction chamber at the top of each branch autoreaction chamber for respectively distributing for all subelements in N grades of even gas-bearing formations.The indoor flow distribution evenness of reaction chamber not only can be improved in inlet duct provided by the invention, but also the validity and efficiency of adjusting gas flow can be improved, so as to improve process efficiency.
Description
Technical field
The present invention relates to semiconductor processing technology fields, and in particular, to a kind of inlet duct and semiconductor machining are set
It is standby.
Background technique
The basic principle of chemical vapor deposition epitaxial growth is reaction gas to be transported in reaction chamber, and pass through heating
Etc. modes chemically react reaction gas in substrate surface, the growth atomic deposition of acquisition on the surface of a substrate, and is grown
Form monocrystalline layer film.During carrying out chemical vapor deposition epitaxial growth, usually by gas transport and control system
(comprising pipeline, flow and valve etc.) guarantees timely and accurately to transport reaction gas into reaction chamber.
For the requirement of uniform doping, thickness needed for meeting growing film uniformly etc., the concentration and thickness of film are improved
Uniformity needs substrate surface nearby there are equally distributed airflow field, thermal field and concentration field, and this requires in growth course
In, gas transport and control system can guarantee that reaction gas is transported to the reactant and dopant of substrate surface each region
Rate it is equal, and airflow field is made to keep uniform parallel laminar condition, generates any fluctuation, turbulent flow and right to avoid airflow field
Stream is vortexed.
Currently, semiconductor processing equipment is broadly divided into horizontal air inlet and vertical air inlet two ways.Wherein, horizontal air inlet side
Formula refers to that a laterally opposed other side of (that is, the direction for being parallel to upper surface of substrate) autoreaction chamber in the horizontal direction is defeated
Send reaction gas；Vertical air inlet mode refers to vertically (that is, perpendicular to the direction of upper surface of substrate) autoreaction chamber
Top conveys reaction gas to bottom.In vertical air inlet mode as an example, as shown in Figure 1, for existing semiconductor processing equipment
Cross-sectional view.Semiconductor processing equipment includes reaction chamber 11, pallet 13 is provided in reaction chamber 11, for carrying substrate
12；Also, the top of reaction chamber 11 is provided with inlet duct 14, the top for autoreaction chamber 11 is to reaction chamber 11
Interior conveying reaction gas.In addition, exhaust apparatus 15 is additionally provided in the bottom of reaction chamber 11, for being discharged in reaction chamber 11
Residual gas.During carrying out technique, reaction gas flows into reaction chamber 11 via inlet duct 14 straight down, and
It is chemically reacted when by pallet 12 with substrate 13 thereon, the residual gas after reaction passes through exhaust dress with carrier gas
Set 15 discharge reaction chambers 11.
The specific structure of above-mentioned inlet duct 14 are as follows: it includes air inlet, shunts sub- chamber and gas outlet.Wherein, air inlet
With three tunnels, it is respectively as follows: the central area for corresponding respectively to reaction chamber 11 and two edges positioned at the central area two sides
The central air induction mouth 141 in region and two Road Edge air inlets 142；Shunting sub- chamber includes that a center shunts sub- chamber 143 and two
Edge shunts sub- chamber 144, and three connect with above-mentioned three road air inlet correspondingly, and lines up one along the radial direction of reaction chamber 11
Row；The quantity of gas outlet is 28, and is equally arranged in a row along the orientation for shunting sub- chamber, wherein positioned at 16 of middle part
Middle part gas outlet 145 shunts sub- chamber 143 with center and connect, center to be shunted to the reaction gas in sub- chamber 143 along level side
To the central area for being delivered to reaction chamber；The 6 edges gas outlet 146 1 for being located at 16 gas outlets two sides is a pair of
It shunts sub- chamber 144 with two edges with answering to connect, two edges are shunted the reaction gas in sub- chamber 144 along horizontal respectively
Direction is delivered to the fringe region of reaction chamber.In addition, regulating valve (such as needle-valve) is additionally provided in each gas outlet, to
Adjust the throughput of air inlet.
Above-mentioned inlet duct 14 is inevitably present following problems in practical applications, it may be assumed that since every road air inlet is set
Set in the corresponding center position for shunting sub- chamber, this to enter shunt the intracavitary reaction gas of son towards the middle into
The speed of port diffusion is greater than the speed that the air inlet towards two sides is spread, to cause the reaction gas corresponding to each gas outlet
There is difference in the flow velocity of body, that is, jet effect.It is influenced by the jet effect, in the air inlet that gas flow rate has differences
Nearby it will appear whirlpool group, to cause the indoor air flow method of reaction chamber uneven.
Although can use the throughput that 28 regulating valves individually adjust 28 gas outlets, to compensate the stream of each gas outlet
Speed difference is different, still, this regulative mode not only heavy workload and complexity, but also since the closing of each gas outlet can be to reaction
The airflow homogeneity of chamber integrally has an impact, and state-variable is excessive, thus is unfavorable for the stability contorting of technique, and the adjusting side
The validity of formula and inefficient, is difficult to meet continuous production requirement.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, propose a kind of inlet duct and
Semiconductor processing equipment not only can be improved the indoor flow distribution evenness of reaction chamber, but also regulating gas can be improved
The validity and efficiency of flow, so as to improve process efficiency.
A kind of inlet duct is provided to achieve the purpose of the present invention comprising air inlet and inlet plenum, the inlet plenum
For will be delivered in reaction chamber from the top of the reaction gas autoreaction chamber that the air inlet flows out, which is characterized in that
The inlet plenum includes N grades of even gas-bearing formations, and N is the integer greater than 1；Wherein, the 1st grade of even gas-bearing formation includes 1 subelement, and being used for will
Reaction gas from the air inlet evenly distributes at least two branches along the direction perpendicular to conveying reaction gas；I-th
The even gas-bearing formation of grade includes multiple subelements, and the number sub-cells in the even gas-bearing formation of i-stage are equal to by all sons in (i-1)-th grade of even gas-bearing formation
The summation of the branch quantity of unit distribution, and each subelement in the even gas-bearing formation of i-stage correspondingly will be even by (i-1)-th grade
Each branch of all subelement distribution evenly distributes at least two along the direction perpendicular to conveying reaction gas again in gas-bearing formation
A branch, i=2,3 ..., N；All subelements are for will be delivered to institute by each branch respectively distributed in N grades of even gas-bearing formations
It states in reaction chamber.
Wherein, the N grades of even gas-bearing formation vertically conveys reaction gas step by step；Alternatively, 1~N-1 grades of even gas-bearing formation edges
Horizontal direction conveys reaction gas step by step, and N grades of even gas-bearing formations vertically convey reaction gas；And in the even gas of i-stage
It is two by the branch quantity that each subelement distributes in layer.
Wherein, 1~N-1 grades of even gas-bearing formations convey reaction gas step by step in the horizontal direction, and in 1~N-1 grades of even gas-bearing formations
In, it is two by the branch quantity that each subelement distributes；N grades of even gas-bearing formations vertically convey reaction gas, and
It is at least two by the branch quantity that each subelement distributes in N grades of even gas-bearing formations, and is even number.
Wherein, the N grades of even gas-bearing formation vertically conveys reaction gas, and each of even gas-bearing formation of at least one level step by step
Subelement further includes a blast fence, to divide correspondingly the subelement in the even gas-bearing formation of upper level with the even gas-bearing formation of the same level
Play inhibition in road；Also, for the even gas-bearing formation for being provided with the blast fence, the branch quantity distributed by each subelement
It is at least two, and is even number；For the even gas-bearing formation of the not set blast fence, the branch quantity distributed by each subelement
It is two.
Wherein, the N grades of even gas-bearing formation vertically conveys reaction gas, and the branch distributed by each subelement step by step
Quantity is at least three；Wherein, in the 1st grade of even gas-bearing formation, at least three branch is evenly distributed on around the air inlet
On the circumference of periphery；By in the even gas-bearing formation of i-stage each subelement distribution at least three branches be evenly distributed on (i-1)-th grade it is even
It is looped around in gas-bearing formation on the circumference of branch periphery corresponding with the subelement；All subelements are used to incite somebody to action in N grades of even gas-bearing formations
It is delivered in the reaction chamber by each branch respectively distributed.
Wherein, each subelement includes that the even gas-bearing formation where it conveys uniform flow that the direction of reaction gas is set gradually
Chamber and shunting daughter board, and two gas outlets are arranged at intervals on the shunting daughter board, described two gas outlets and the uniform flow
Sub- chamber connection, and be uniformly distributed relative to the sub- chamber of the uniform flow along the direction perpendicular to conveying reaction gas, and even about this
The center line for flowing sub- chamber is symmetrical；Wherein, the air inlet is connect with the sub- chamber of uniform flow in the 1st grade of even gas-bearing formation, and is located at the uniform flow
The center position of sub- chamber；Each gas outlet is sub with uniform flow each in the even gas-bearing formation of i-stage correspondingly in (i-1)-th grade of even gas-bearing formation
Chamber connection, and each gas outlet is located at the corresponding sub- chamber of uniform flow in the even gas-bearing formation of i-stage in (i-1)-th grade of even gas-bearing formation
Center position；Each gas outlet in N grades of even gas-bearing formations is connect with the reaction chamber.
Wherein, each subelement includes that the even gas-bearing formation where it conveys uniform flow that the direction of reaction gas is set gradually
Chamber and shunt daughter board, and be arranged at intervals at least two gas outlets on the shuntings daughter board, the quantity of the gas outlet and by
The branch quantity of subelement distribution is equal；At least two gas outlet is connect with the sub- chamber of the uniform flow, and relative to described
The sub- chamber of uniform flow is uniformly distributed along the direction perpendicular to conveying reaction gas, and the center line about the sub- chamber of the uniform flow is symmetrical；Its
In, the air inlet is connect with the sub- chamber of uniform flow in the 1st grade of even gas-bearing formation, and is located at the center position of the sub- chamber of the uniform flow；(i-1)-th
The summation of gas outlet quantity is equal to the summation of the sub- chamber quantity of uniform flow in the even gas-bearing formation of i-stage, and (i-1)-th grade of even gas-bearing formation in the even gas-bearing formation of grade
In each gas outlet connect correspondingly with the sub- chamber of uniform flow each in the even gas-bearing formation of i-stage, and it is every in (i-1)-th grade of even gas-bearing formation
A gas outlet is located at the center position of the corresponding sub- chamber of uniform flow in the even gas-bearing formation of i-stage；It is each in N grades of even gas-bearing formations
A gas outlet is connect with the reaction chamber.
Wherein, each subelement includes that the even gas-bearing formation where it conveys uniform flow that the direction of reaction gas is set gradually
Chamber and shunt daughter board, and be arranged at intervals at least two gas outlets on the shuntings daughter board, the quantity of the gas outlet and by
The branch quantity of subelement distribution is equal；At least two gas outlet is connect with the sub- chamber of the uniform flow, and relative to described
The sub- chamber of uniform flow is uniformly distributed along the direction perpendicular to conveying reaction gas, and the center line about the sub- chamber of the uniform flow is symmetrical；Its
In, the air inlet is connect with the sub- chamber of uniform flow in the 1st grade of even gas-bearing formation, and is located at the center position of the sub- chamber of the uniform flow；(i-1)-th
The summation of gas outlet quantity is equal to the summation of the sub- chamber quantity of uniform flow in the even gas-bearing formation of i-stage, and (i-1)-th grade of even gas-bearing formation in the even gas-bearing formation of grade
In each gas outlet connect correspondingly with the sub- chamber of uniform flow each in the even gas-bearing formation of i-stage, and it is every in (i-1)-th grade of even gas-bearing formation
A gas outlet is located at the center position of the corresponding sub- chamber of uniform flow in the even gas-bearing formation of i-stage；It is each in N grades of even gas-bearing formations
A gas outlet is connect with the reaction chamber；The blast fence setting is intracavitary in uniform flow, and is located at and uniform flow
At the opposite position in the gas outlet of chamber connection；And on the direction perpendicular to conveying reaction gas, the length of the blast fence
Degree is adapted with the width of the sub- chamber of the uniform flow；Connect in the width and the even gas-bearing formation of upper level of the blast fence with the sub- chamber of the uniform flow
The diameter of the gas outlet connect is adapted.
Preferably, the blast fence surface opposite with the gas outlet is plane, arc convex or the conical surface.
Wherein, each subelement includes the sub- chamber of uniform flow set gradually along the direction of conveying reaction gas and shunts daughter board,
And at least three gas outlets are provided on the shunting daughter board, at least three gas outlet is connect with the sub- chamber of the uniform flow,
And it is evenly distributed on the circumference of the center line of the sub- chamber of the uniform flow；Wherein, the air inlet with it is even in the 1st grade of even gas-bearing formation
Sub- chamber connection is flowed, and is located at the center position of the sub- chamber of the uniform flow；In (i-1)-th grade of even gas-bearing formation each gas outlet correspondingly with
Each sub- chamber connection of uniform flow in the even gas-bearing formation of i-stage, and each gas outlet is located in the even gas-bearing formation of i-stage in (i-1)-th grade of even gas-bearing formation
The center position of the corresponding sub- chamber of the uniform flow；Each gas outlet and the reaction chamber in N grades of even gas-bearing formations connect
It connects.
Preferably, each subelement in the even gas-bearing formation of at least one level further includes a blast fence, to even to upper level
Inhibition is played with the one-to-one branch of subelement of the even gas-bearing formation of the same level in gas-bearing formation.
Preferably, the quantity of the air inlet is one or more, and multiple air inlets are reacted along perpendicular to conveying
The direction of gas is arranged successively；The quantity of the inlet plenum is corresponding with the quantity of the air inlet, and the inlet plenum is one by one
Accordingly the reaction gas flowed out from the air inlet is delivered in reaction chamber.
Preferably, the gas outlet diameter in the even gas-bearing formation of the same level is less than corresponding two neighboring in the even gas-bearing formation of next stage
Interval between gas outlet.
Preferably, for each subelement in even gas-bearing formation at the same level, corresponding to each height list in the middle part of the reaction chamber
It is straight that gas outlet diameter in member is less than or greater than the gas outlet in each subelement corresponding to the reaction chamber both sides of the edge
Diameter, alternatively, the gas outlet diameter corresponded in each subelement of reaction chamber different location is identical.
Preferably, from the 1st grade of even gas-bearing formation to N grades of even gas-bearing formations, the diameter of the gas outlet is reduced step by step by preset ratio,
And/or the interval in even gas-bearing formation at the same level between adjacent two gas outlets is reduced step by step by preset ratio.
Preferably, the gas outlet is round clear opening, rectangular clear opening, round taper hole or square cone hole.
As another technical solution, the present invention also provides a kind of semiconductor processing equipments comprising reaction chamber and
For to the reaction chamber provide reaction gas inlet duct, the inlet duct use it is provided by the invention it is above-mentioned into
Device of air.
The invention has the following advantages:
Inlet duct provided by the invention, first will be from the anti-of air inlet by the subelement in the 1st grade of even gas-bearing formation
Gas is answered to evenly distribute at least two branches along the direction perpendicular to conveying reaction gas；Then by the even gas-bearing formation of i-stage
Each subelement correspondingly by each branch distributed by subelements all in (i-1)-th grade of even gas-bearing formation along perpendicular to conveying
The direction of reaction gas evenly distributes at least two branches again, finally will by all subelements in N grades of even gas-bearing formations
It is delivered in reaction chamber by each branch respectively distributed, wherein i=2,3 ..., N, N are the integer greater than 1.Due to every
The even gas-bearing formation of grade is will be uniform again by the corresponding branch progress of the even gas-bearing formation distribution of upper level by each subelement
Distribution, that is, each subelement is that single branch is reallocated, this is disposably distributed into multiple branches with by single channel gas
It compares, jet effect can be overcome, so as to improve the indoor flow distribution evenness of reaction chamber.In addition, the present invention provides
Inlet duct the flow of each road inlet channel is individually adjusted without using regulating valve, and rely solely on itself structure i.e. and can be improved and is anti-
The indoor flow distribution evenness of chamber is answered, so as to improve the validity and efficiency of adjusting, and then process efficiency can be improved.
Semiconductor processing equipment provided by the invention can not only be mentioned by using inlet duct provided by the invention
The high indoor flow distribution evenness of reaction chamber, and the validity and efficiency of adjusting gas flow can be improved, so as to
Improve process efficiency.
Detailed description of the invention
Fig. 1 is the cross-sectional view of existing semiconductor processing equipment；
Fig. 2A is the schematic diagram for the inlet duct that first embodiment of the invention provides；
Fig. 2 B is the cross-sectional view for the inlet duct that first embodiment of the invention provides；
Fig. 2 C is the cross-sectional view in Fig. 2 B along line A-A；
Fig. 2 D is the cross-sectional view for the inlet duct that a variant embodiment of first embodiment of the invention provides；
Fig. 2 E is the schematic diagram for the inlet duct that another variant embodiment of first embodiment of the invention provides；
Fig. 3 A is the schematic diagram for the inlet duct that second embodiment of the invention provides；
Fig. 3 B is the cross-sectional view for the inlet duct that second embodiment of the invention provides；
Fig. 3 C is the cross-sectional view in Fig. 3 B along line A-A；
Fig. 4 A is the schematic diagram for the inlet duct that third embodiment of the invention provides；
Fig. 4 B is the cross-sectional view for the inlet duct that third embodiment of the invention provides；
Fig. 5 A is the schematic diagram for the inlet duct that fourth embodiment of the invention provides；
Fig. 5 B is the cross-sectional view for the inlet duct that fourth embodiment of the invention provides；
Fig. 5 C is the cross-sectional view in Fig. 5 B along line B-B；
Fig. 6 is the schematic shapes on the blast fence surface opposite with gas outlet；
Fig. 7 A is the schematic diagram for the inlet duct that fifth embodiment of the invention provides；
Fig. 7 B is the top view in Fig. 7 A along I-I line；
Fig. 7 C is the top view in Fig. 7 A along II-II line；And
Fig. 7 D is the cross-sectional view in Fig. 7 B and Fig. 7 C along line C-C.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The inlet duct and semiconductor processing equipment of offer are described in detail.
First embodiment
Fig. 2A is the schematic diagram for the inlet duct that first embodiment of the invention provides.Please refer to Fig. 2A, inlet duct packet
Air inlet 20 and inlet plenum 100 are included, the two is respectively positioned on the top of reaction chamber 50, wherein inlet plenum 100 is used for will be from air inlet
The reaction gas of 20 outflow of mouth vertically (Y-direction) are delivered in reaction chamber 50.So-called vertical direction, refer to perpendicular to
It is placed in the direction on the workpiece to be machined surface in reaction chamber 50；So, the X-direction perpendicular to the direction Y is perpendicular to conveying
The direction on reaction gas and the workpiece to be machined surface being parallel in reaction chamber 50.During carrying out technique, reaction gas
The top of body autoreaction chamber 50 vertically flows into reaction chamber 50, and when reaching workpiece to be machined surface, with it
It chemically reacts, the residual gas after reaction is discharged with the bottom of carrier gas autoreaction chamber 50.
It should be noted that positive throwing of the cavity of reaction chamber in its horizontal plane (plane being parallel to each other with X-direction)
Shadow shape can be round, square or rectangle, wherein be directed to circular reaction chamber, then X-direction refers to its radial direction；Needle
To the reaction chamber of square perhaps rectangle, then X-direction refers to its geometric center lines or diagonal line direction.
In the present embodiment, which includes N grades of even gas-bearing formations, N=4, and N grades of even gas-bearing formations convey step by step along Y-direction
Reaction gas.Wherein, as shown in Figure 2 A, the 1st grade of even gas-bearing formation includes 1 subelement 41, for will be from the reaction of air inlet 20
Gas evenly distributes into two branches in X direction；2nd grade of even gas-bearing formation includes 2 subelements, 42,2 subelements 42 for one by one
Two branches distributed by the subelement 41 in the 1st grade of even gas-bearing formation are accordingly evenly distributed into two branches again in X direction,
It is final to obtain 4 branches in total；3rd grade of even gas-bearing formation includes 4 subelements, 43,4 subelements 43 for correspondingly will be by
4 branches of 2 subelements 42 distribution in the 2nd grade of even gas-bearing formation evenly distribute into two branches again in X direction, finally obtain
Obtain 8 branches in total；4th grade of even gas-bearing formation is used for including 8 subelements, 44,8 subelements 44 correspondingly will be even by 3rd level
8 branches of 4 subelements 43 distribution in gas-bearing formation evenly distribute into two branches again in X direction, final to obtain in total 16
Then this 16 branches are delivered in reaction chamber 50 by a branch.
From the foregoing, it will be observed that the number sub-cells in the even gas-bearing formation of i-stage are equal to even by (i-1)-th grade in the 2nd~4 grade of even gas-bearing formation
The summation of the branch quantity of all subelements distribution in gas-bearing formation, that is, it by the branch quantity that each subelement distributes is two, and
To be distributed correspondingly by subelements all in (i-1)-th grade of even gas-bearing formation each point of each subelement in the even gas-bearing formation of i-stage
Curb evenly distributes into two branches, i=2,3 ..., N perpendicular to the direction of conveying reaction gas again.Due to every grade of even gas-bearing formation
It is that will be evenly distributed again by a corresponding branch for the even gas-bearing formation distribution of upper level by each subelement, that is,
Each subelement is that the branch quantity that single branch is reallocated, and is distributed by each subelement is 2, is finally obtained
16 branches in total are obtained, this can overcome jet effect compared with single channel gas is disposably distributed into 16 branches, thus
The indoor flow distribution evenness of reaction chamber can be improved.
The structure of inlet duct with the above function is described in detail below.Specifically, Fig. 2 B is the present invention the
The cross-sectional view for the inlet duct that one embodiment provides.Fig. 2 C is the cross-sectional view in Fig. 2 B along line A-A.Referring to Figure 2 together B and
Fig. 2 C, in the 1st grade of even gas-bearing formation, subelement 41 includes the sub- chamber 21 of uniform flow set gradually along Y-direction and shunts daughter board 31, air inlet
Mouth 20 is connect with the sub- chamber 21 of uniform flow, and is located at the center position of the sub- chamber 21 of the uniform flow；It is arranged at intervals on shunting daughter board 31
Two gas outlets 311, two gas outlets 311 (upper end) connect with the sub- chamber 21 of uniform flow, and in X direction relative to the sub- chamber 21 of uniform flow
It is uniformly distributed, and symmetrical about the center line of the sub- chamber 21 of the uniform flow in the Y direction.Reaction gas is conveyed in inlet plenum 100
In the process, the single channel reaction gas from air inlet 20 flows into the sub- chamber 21 of uniform flow, and is evenly distributed by two gas outlets 311
At being flowed out after two-way.
In the 2nd grade of even gas-bearing formation, each subelement 42 includes the sub- chamber 22 of uniform flow set gradually along Y-direction and shunts daughter board
32, two gas outlets 321 are arranged at intervals on shunting daughter board 32, two gas outlets 321 (upper end) and the sub- chamber 22 of uniform flow connect
It connects, and is uniformly distributed in X direction relative to the sub- chamber 22 of uniform flow, and the center line pair about the sub- chamber 22 of the uniform flow in the Y direction
Claim.Moreover, two gas outlets 311 (lower end) in the 1st grade of even gas-bearing formation correspondingly with two uniform flows in the 2nd grade of even gas-bearing formation
Sub- chamber 22 connects, and each gas outlet 311 in the 1st grade of even gas-bearing formation is located at corresponding uniform flow in the 2nd grade of even gas-bearing formation
The center position of chamber 22.Two gas outlets during inlet plenum 100 conveys reaction gas, from the 1st grade of even gas-bearing formation
The reaction gas of 311 outflows is flowed into correspondingly in the sub- chamber 22 of two uniform flows in the 2nd grade of even gas-bearing formation, that is, the 1st grade of even gas-bearing formation
In the air inlet of the sub- chamber 22 of uniform flow that can be considered as in the 2nd grade of even gas-bearing formation of gas outlet 311, then, in each sub- chamber 22 of uniform flow
Reaction gas can evenly distribute into again two-way by two gas outlets 321 connecting with the sub- chamber 22 of the uniform flow after flow out.
In the even gas-bearing formation of 3rd level, each subelement 43 includes the sub- chamber 23 of uniform flow set gradually along Y-direction and shunts daughter board
33, two gas outlets 331 are arranged at intervals on shunting daughter board 33, two gas outlets 331 (upper end) connect with the sub- chamber 23 of uniform flow,
And it is uniformly distributed in X direction relative to the sub- chamber 23 of uniform flow, and symmetrical about the center line of the sub- chamber 23 of the uniform flow in the Y direction.
Moreover, in the 2nd grade of even gas-bearing formation 4 gas outlets 321 (lower end) correspondingly with the sub- chamber 23 of 4 uniform flows in the even gas-bearing formation of 3rd level
Connection, and each gas outlet 321 in the 2nd grade of even gas-bearing formation is located at the corresponding sub- chamber 23 of uniform flow in the even gas-bearing formation of 3rd level
Center position.It is readily appreciated that, the gas outlet 321 in the 2nd grade of even gas-bearing formation can be considered as the sub- chamber of uniform flow in the 3rd grade of even gas-bearing formation
23 air inlet, and reaction gas flows into the process of the even gas-bearing formation of 3rd level and above-mentioned from the 1st grade of even gas-bearing formation stream from the 2nd grade of even gas-bearing formation
The process for entering the 2nd grade of even gas-bearing formation is similar.
In the 4th grade of even gas-bearing formation, each subelement 44 includes the sub- chamber 24 of uniform flow set gradually along Y-direction and shunts daughter board
34, two gas outlets 341 are arranged at intervals on shunting daughter board 34, two gas outlets 341 (upper end) and the sub- chamber 24 of uniform flow connect
It connects, and is uniformly distributed in X direction relative to the sub- chamber 24 of uniform flow, and the center line pair about the sub- chamber 24 of the uniform flow in the Y direction
Claim.Moreover, in the even gas-bearing formation of 3rd level 8 gas outlets 331 (lower end) correspondingly with 8 sub- chambers of uniform flow in the 4th grade of even gas-bearing formation
24 connections, and each gas outlet 331 in the even gas-bearing formation of 3rd level is located at the corresponding sub- chamber 24 of uniform flow in the 4th grade of even gas-bearing formation
Center position.Each gas outlet 341 in N grades of even gas-bearing formations is connect with reaction chamber 50.It is readily appreciated that, the even gas of 3rd level
The air inlet for the sub- chamber 24 of uniform flow that gas outlet 331 in layer can be considered as in the 4th grade of even gas-bearing formation, and reaction gas is even from 3rd level
Gas-bearing formation flow into the process of the 4th grade of even gas-bearing formation with above-mentioned from the 1st grade of even gas-bearing formation to flow into the 2nd grade of process of even gas-bearing formation similar.
By the sub- chamber of above-mentioned uniform flow, the pressure of reaction gas and flow velocity can be made to be released, thus play transition and
The effect of even gas.Moreover, because two air inlets in each subelement relative to the sub- chamber of uniform flow in the subelement in X direction
It is uniformly distributed, and symmetrical about the center line of the sub- chamber of the uniform flow in the Y direction, and each gas outlet is located in the even gas-bearing formation of the same level
The center position of the corresponding sub- chamber of uniform flow in the even gas-bearing formation of next stage, this makes reaction gas flow into the even gas-bearing formation of next stage
In in the sub- chamber of uniform flow that is connect with the gas outlet after, two gas outlets of the sub- chamber of the uniform flow can be diffused to simultaneously, so as to
Single channel gas is evenly distributed into two branches, and the flow velocity of the two branches is identical, and then jet effect can be overcome and reality
The air flow method now flowed out from two gas outlets is uniform.
It is distributed further, since the number sub-cells in the even gas-bearing formation of i-stage are equal to by subelements all in (i-1)-th grade of even gas-bearing formation
Branch quantity summation, and each subelement in the even gas-bearing formation of i-stage correspondingly will be by institute in (i-1)-th grade of even gas-bearing formation
The each branch for having subelement to distribute evenly distributes into two branches again in X direction, and i=2,3 ..., N, this makes even gas-bearing formation
Series it is bigger, the quantity of subelement is more, and the summation for the branch quantity being distributed by all subelements is more, that is, i-stage
The gas circuit quantity summation of even gas-bearing formation is equal to 2i-1, so as to realize the multiplication step by step of branch quantity, may finally obtain relative to
The equally distributed multiple branches of reaction chamber 50.It is readily appreciated that, since inlet duct provided in this embodiment is by N grades of even gas
Evenly distributing step by step for layer and obtain uniform multiple branches, thus the inlet duct relies solely on itself structure i.e. and reaction can be improved
The indoor flow distribution evenness of chamber, without individually adjusting the flow of each road inlet channel using regulating valve, so as to mention
The validity and efficiency of top adjustment, and then process efficiency can be improved.
In the present embodiment, the set-up mode of the sub- chamber of uniform flow in each subelement and shunting daughter board specifically: in air inlet
Four floor plate are arranged at intervals with along Y-direction in the cavity of room 100, which is separated into four-level space, and every layer by four plates
It space and located downstream and one layer of plate adjacent thereto composition even gas-bearing formation of level-one, four-level space and four layers of plate form 4 altogether
The even gas-bearing formation of grade.Wherein, in the 1st grade of even gas-bearing formation, the sub- chamber 21 of uniform flow in subelement 41 is the first sheaf space, shunts daughter board
31 be the first layer plate adjacent with first sheaf space；In the 2nd~4 grade of even gas-bearing formation, in every grade of even gas-bearing formation adjacent two
A subelement is separated by demarcation plate 11, that is, at least one demarcation plate 11, and multiple separations are provided in every sheaf space
Plate 11 is spaced setting in X direction, so that the sheaf space is separated into multiple subspaces as the sub- chamber of uniform flow, while will be with the layer
The adjacent flat plate separation in space is at multiple as the flat plate section for shunting daughter board, the number of the quantity of the flat plate section and position and subspace
Amount and position correspond, and each subelement is made of every sub-spaces and corresponding flat plate section.For example, at the 2nd grade
In even gas-bearing formation, the center position of the 2nd sheaf space is provided with a demarcation plate 11, thus by the sheaf space be separated into two it is even
Sub- chamber 22 is flowed, while by the flat plate separation adjacent with the sheaf space at two shunting daughter boards 32.
Preferably, in certain grade of even gas-bearing formation, if each spacing shunted between two gas outlets adjacent on daughter board is smaller,
Demarcation plate 11 can then be saved, that is, it is connection between two adjacent subelements, for example, as shown in Figure 2 D, the 4th grade of even gas
Not set demarcation plate 11 in layer.
It should be noted that in the present embodiment, the series of even gas-bearing formation is 4 grades, that is, N=4, but the present invention not office
It is limited to this, in practical applications, the series of even gas-bearing formation can also be 2 grades, 3 grades or 5 grades or more, that is, N is whole greater than 1
Number.
In practical applications, it is preferred that the gas outlet diameter in the even gas-bearing formation of the same level is less than in the even gas-bearing formation of next stage phase therewith
Interval between corresponding two neighboring gas outlet, to guarantee going out in the gas outlet in the even gas-bearing formation of the same level and the even gas-bearing formation of next stage
Port mutually staggers on the direction of conveying reaction gas, so as to avoid because part reaction gas is directly from the even gas of next stage
Gas outlet outflow in layer and caused by air flow method it is uneven.
In practical applications, for each subelement in even gas-bearing formation at the same level, corresponding to each height in the middle part of reaction chamber
Gas outlet diameter in unit can be less than or greater than the gas outlet in each subelement corresponding to reaction chamber both sides of the edge
Diameter, alternatively, the gas outlet diameter in each subelement corresponding to reaction chamber different location can also be made identical.
Moreover, the diameter of gas outlet can reduce step by step by by preset ratio from the 1st grade of even gas-bearing formation to N grades of even gas-bearing formations,
And/or the interval between two adjacent gas outlets can also be reduced step by step by preset ratio.
In addition, gas outlet can be round or rectangular clear opening, the diameter of gas outlet refers to circular diameter or side at this time
The side length of shape；Or gas outlet may be round taper hole or square cone hole, the diameter of gas outlet refers to cone most at this time
The maximal side of major diameter or square cone.Certainly, in practical applications, gas outlet can also use other as the case may be
Meaning structure.
Explanation is needed further exist for, in this embodiment, the quantity of air inlet 20 is one, and the quantity of inlet plenum is one
It is a, but the present invention is not limited thereto, in practical applications, is used for air inlet ruler for gas to pass through according to reaction chamber
Very little, the air inlet quantity of inlet duct can also be multiple, and multiple air inlets are arranged successively in X direction；The quantity of inlet plenum
It is corresponding with the quantity of air inlet, and the reaction gas flowed out from air inlet is delivered to reaction chamber correspondingly by inlet plenum
It is interior.
For example, as shown in Figure 2 E, the quantity of air inlet is two, respectively 201 He of air inlet parallel with one another in X direction
202, correspondingly with the two, the quantity of inlet plenum is two, respectively inlet plenum 101 and 102.Wherein, 101 He of inlet plenum
102 are arranged side by side in X direction relative to the air inlet of reaction chamber 50, and the structure of the two is identical.In transmission reaction gas
During body, the reaction gas flowed out from air inlet pipe 60 is transmitted to air inlet by air inlet 201 and 202 respectively correspondingly
In room 101 and 102, then multiple branches are distributed by inlet plenum 101 and 102 step by step respectively, and flow into reaction chamber 50 simultaneously
It is interior.
Second embodiment
Fig. 3 A is the schematic diagram for the inlet duct that second embodiment of the invention provides.Fig. 3 A is please referred to, the present embodiment provides
Inlet duct compared with above-mentioned first embodiment, difference be only that: in the present embodiment, 1~N-1 grades of even gas-bearing formations are along water
Square to conveying reaction gas step by step, and N grades of even gas-bearing formations vertically convey reaction gas.
Specifically, Fig. 3 B is the cross-sectional view for the inlet duct that second embodiment of the invention provides.Fig. 3 C is in Fig. 3 B along A-A
The cross-sectional view of line.Also referring to Fig. 3 B and 3C, for 1~N-1 grades of even gas-bearing formations in inlet plenum 100, with above-mentioned first
1~N-1 grades of even gas-bearing formations in embodiment are compared, and the structure of the two is identical, and are only arragement direction difference, that is, the present embodiment
In 1~N-1 grades of even gas-bearing formations convey reaction gas step by step along Z-direction, Z-direction is in the same plane with X-direction, and respectively
It is mutually perpendicular to Y-direction and X-direction.Gas-bearing formation even for N grades, compared with N grades of even gas-bearing formations in above-mentioned first embodiment,
The structure and arragement direction of the two are all the same, that is, convey reaction gas along Y-direction.
In the present embodiment, there are a turnings between N-1 grades of even gas-bearing formations and N grades of even gas-bearing formations, that is, N grades even
Gas outlet 341 in gas-bearing formation is located at the lower section of the sub- chamber 24 of uniform flow, and the gas outlet 331 in N-1 grades of even gas-bearing formations is even positioned at N grades
The side (right side) of the sub- chamber 24 of uniform flow in gas-bearing formation.During conveying reaction gas, from sub- N-1 grades of even gas-bearing formations
The reaction gas that gas outlet 331 is flowed out flows into the sub- chamber 24 of uniform flow in N grades of even gas-bearing formations along Z-direction towards left, and converts flowing
Direction flows into reaction chamber from the gas outlet 341 in N grades of even gas-bearing formations along Y-direction downward.
By the turning between N-1 grades of even gas-bearing formations and N grades of even gas-bearing formations, can play, which makes air-flow that can not continue edge, works as
The inhibition of front direction flowing, so as to allow the flow to while converting flow direction diffusely more evenly, in turn
It can be further improved even gas effect, so as to improve the distributing homogeneity of air-flow.
The other structures and function of inlet duct provided in this embodiment are identical as above-mentioned first embodiment, no longer superfluous herein
It states.
3rd embodiment
Fig. 4 A is the schematic diagram for the inlet duct that third embodiment of the invention provides.Fig. 4 A is please referred to, the present embodiment provides
Inlet duct compared with above-mentioned second embodiment, difference is only that: N=3, and in the even gas-bearing formation of 3rd level, by every height list
The branch quantity of member distribution is four, that is, each subelement 43 in the even gas-bearing formation of 3rd level correspondingly will be by the 2nd grade of even gas
Each branch of all subelement distribution is distributed into four branches along the direction Direct Uniform perpendicular to conveying reaction gas in layer.
Specifically, Fig. 4 B is the cross-sectional view for the inlet duct that third embodiment of the invention provides.Please refer to Fig. 4 B, for into
The 1st~2 grade of even gas-bearing formation in gas chamber 200, compared with the 1st~2 grade of even gas-bearing formation in above-mentioned second embodiment, the structure of the two
It is all the same with arragement direction.
Moreover, in the present embodiment, each subelement 43 in the even gas-bearing formation of 3rd level includes four gas outlets 331, four go out
Port 331 is uniformly distributed in X direction relative to the sub- chamber 23 of uniform flow, and the center line about the sub- chamber 23 of the uniform flow is symmetrical, that is,
The center line two sides of the sub- chamber 23 of the uniform flow respectively symmetrically are arranged there are two gas outlet 331, each outlet in the 2nd grade of even gas-bearing formation
Mouth 321 is located at the center position of the corresponding sub- chamber 23 of uniform flow in the even gas-bearing formation of 3rd level.
A turning is equally existed between the even gas-bearing formation of 3rd level and the 2nd grade of even gas-bearing formation as a result, since this can play resistance
Hinder air-flow to continue the effect of flowing, this enable air-flow while converting flow direction diffusely more evenly, thus even if
Four branches are directly distributed by single channel air-flow, it is also possible to obtain uniform air flow method.In addition, by direct by single channel air-flow
Four branches are distributed into, even gas-bearing formation can also be reduced under the premise of the branch quantity summation of the even gas-bearing formation of the last layer is identical
Series simplifies the structure of inlet plenum so as to reduce the volume of inlet plenum.
It should be noted that in the present embodiment, in N grades of even gas-bearing formations, the branch quantity distributed by each subelement
It is four, but the present invention is not limited thereto, in practical applications, in N grades of even gas-bearing formations, is distributed by each subelement
Branch quantity can be set as more than two as the case may be, and the branch quantity is even number.
The other structures and function of inlet duct provided in this embodiment are identical as above-mentioned second embodiment, no longer superfluous herein
It states.
Fourth embodiment
Fig. 5 A is the schematic diagram for the inlet duct that fourth embodiment of the invention provides.Fig. 5 A is please referred to, the present embodiment provides
Inlet duct compared with above-mentioned first embodiment, difference is only that: in the present embodiment, N=3, and in the even gas-bearing formation of 3rd level
In, each subelement further includes a blast fence 40, to the subelement one in the 2nd grade of even gas-bearing formation with the even gas-bearing formation of 3rd level
One corresponding branch plays inhibition；It is four by the branch quantity that each subelement distributes and in the even gas-bearing formation of 3rd level
It is a, that is, each subelement 43 in the even gas-bearing formation of 3rd level will be distributed correspondingly by subelements all in the 2nd grade of even gas-bearing formation
Direct Uniform is distributed into four branches to each branch in X direction.
Specifically, Fig. 5 B is the cross-sectional view for the inlet duct that fourth embodiment of the invention provides.Fig. 5 C is in Fig. 5 B along B-B
The cross-sectional view of line.Also referring to Fig. 5 B and Fig. 5 C, for the 1st~2 grade of even gas-bearing formation in inlet plenum 300, with above-mentioned first
The 1st~2 grade of even gas-bearing formation in embodiment is compared, and the structure and arragement direction of the two are all the same.
Moreover, in the present embodiment, each subelement 43 in the even gas-bearing formation of 3rd level includes four gas outlets 331, four go out
Port 331 is uniformly distributed in X direction relative to the sub- chamber 23 of uniform flow, and the center line about the sub- chamber 23 of the uniform flow is symmetrical, that is,
The center line two sides of the sub- chamber 23 of the uniform flow respectively symmetrically are arranged there are two gas outlet 331, each outlet in the 2nd grade of even gas-bearing formation
Mouth 321 is located at the center position of the corresponding sub- chamber 23 of uniform flow in the even gas-bearing formation of 3rd level.
In the even gas-bearing formation of 3rd level, blast fence 40 is arranged in the sub- chamber 23 of each uniform flow, and is located in the 2nd grade of even gas-bearing formation
At the opposite position in the gas outlet 321 being connect with the sub- chamber 23 of the uniform flow；And in the X direction, the width of blast fence 40 with go out
The diameter of port 321 is adapted, as shown in Figure 5 B；It is generally aligned in the same plane with X-direction, and on the perpendicular direction Z,
The length of blast fence 40 is adapted with the width of the sub- chamber 23 of uniform flow, as shown in Fig. 5 C.
It, can be to from the reaction gas that gas outlet on the other side in the even gas-bearing formation of upper level is flowed out by blast fence 40
To inhibition, the inhibition is similar with the effect at above-mentioned turning, can make air-flow that can not continue edge and work as front direction flowing,
And while converting flow direction diffusely more evenly, thus even if being directly distributed into four branches by single channel air-flow, it can also
To obtain uniform air flow method.In addition, by being directly distributed into four branches by single channel air-flow, it can also be even in the last layer
Under the premise of the branch quantity summation of gas-bearing formation is identical, the series of even gas-bearing formation is reduced, so as to reduce the volume of inlet plenum, is simplified
The structure of inlet plenum.
Preferably, the surface opposite with gas outlet of blast fence 40 can be plane, the arc convex as shown in Fig. 6
Or conical surface etc..It is readily appreciated that, surface of different shapes can influence the direction that blast fence hinders air-flow.
It should be noted that in the present embodiment, in N grades of even gas-bearing formations, the branch quantity distributed by each subelement
It is four, but the present invention is not limited thereto, in practical applications, in N grades of even gas-bearing formations, is distributed by each subelement
Branch quantity can be set as more than two as the case may be, and the branch quantity is even number.
It should also be noted that, in the present embodiment, blast fence 40 is only provided in the even gas-bearing formation of 3rd level, but originally
Invention is not limited thereto, in practical applications, can be in at least one level in N grades of even gas-bearing formations (N is the integer greater than 1)
Each subelement one blast fence, also, the even gas-bearing formation for being provided with the blast fence, by each subelement point are set
The branch quantity matched is at least two, and the branch quantity is even number；For the even gas-bearing formation of the not set blast fence, by each
The branch quantity of subelement distribution is two.
The other structures and function of inlet duct provided in this embodiment are identical as above-mentioned first embodiment, no longer superfluous herein
It states.
5th embodiment
Fig. 7 A is the schematic diagram for the inlet duct that fifth embodiment of the invention provides.Fig. 7 A is please referred to, the present embodiment provides
Inlet duct compared with above-mentioned first embodiment, difference be only that: in the present embodiment, N grades of even gas-bearing formations along Y-direction step by step
The branch quantity for conveying reaction gas, and being distributed by each subelement is three, and the arrangement mode of three branches with it is above-mentioned
First embodiment is different, that is, and in the 1st grade of even gas-bearing formation, three branches are evenly distributed on the circumference of 20 periphery of air inlet,
It is evenly distributed in (i-1)-th grade of even gas-bearing formation and is looped around by least two branches of each subelement distribution in the even gas-bearing formation of i-stage
On the circumference of branch periphery corresponding with the subelement.
Specifically, Fig. 7 B is the top view in Fig. 7 A along I-I line.Fig. 7 C is the top view in Fig. 7 A along II-II line.Fig. 7 D
For the cross-sectional view in Fig. 7 B and Fig. 7 C along line C-C.B-7D referring to Figure 7 together is shunting daughter board 31 in the 1st grade of even gas-bearing formation
There are three gas outlet 311, three gas outlets 311 to connect with the sub- chamber 21 of uniform flow for upper setting, and is evenly distributed on around uniform flow
On the circumference of the center line of chamber 21, as shown in Figure 7 B.It is readily appreciated that, due to uniform flow in air inlet 20 and the 1st grade of even gas-bearing formation
Chamber 21 connects, and is located at the center position of the sub- chamber of the uniform flow, thus three gas outlets 311 are uniformly looped around and are with air inlet 20
Center and it is located on the circumference of 20 periphery of the air inlet, uniformly divides the reaction gas from air inlet 20 so as to realize
It is made into three branches.
Moreover, in the 1st grade of even gas-bearing formation each gas outlet 311 correspondingly with each sub- chamber of uniform flow in the 2nd grade of even gas-bearing formation
22 connections, and each gas outlet 311 is located at the corresponding sub- chamber 22 of uniform flow in the 2nd grade of even gas-bearing formation in the 1st grade of even gas-bearing formation
Center position；2nd grade of even gas-bearing formation is used for including 3 subelements, 42,3 subelements 42 correspondingly will be by the 1st grade of even gas
Three branches that subelement 41 in layer distributes evenly distribute into three branches again, final to obtain 9 branches in total.Specifically
Ground corresponds to each subelement 42, and there are three gas outlet 321, three gas outlets 321 and therewith phases for setting on shunting daughter board 32
The corresponding sub- chamber 22 of uniform flow connects, and is evenly distributed on the circumference of the center line of the sub- chamber 22 of the uniform flow, as seen in figure 7 c.
Since each gas outlet 311 is located at the center of the corresponding sub- chamber 22 of uniform flow in the 2nd grade of even gas-bearing formation in the 1st grade of even gas-bearing formation
Place, thus three gas outlets 321 of corresponding each subelement 42 are uniformly looped around correspondingly and are with each gas outlet 311
Center and it is located on the circumference of 311 periphery of the gas outlet, each gas outlet 311 will be come from correspondingly so as to realize
Reaction gas evenly distribute into three branches.
And so on, each gas outlet is sub with uniform flow each in the even gas-bearing formation of i-stage correspondingly in (i-1)-th grade of even gas-bearing formation
Chamber connection, and each gas outlet is located in the even gas-bearing formation of i-stage in the corresponding sub- chamber of uniform flow in (i-1)-th grade of even gas-bearing formation
At heart position；And there are three gas outlets, three gas outlets to connect with the sub- chamber of the uniform flow for setting on each shunting daughter board, and uniformly
It is distributed on the circumference of the center line of the sub- chamber of the uniform flow.
Preferably, each subelement in the even gas-bearing formation of at least one level further includes a blast fence, to even to upper level
Inhibition is played with the one-to-one branch of subelement of the even gas-bearing formation of the same level in gas-bearing formation.The structure and function of the blast fence with
Blast fence 40 in above-mentioned fourth embodiment is similar, specifically, in the even gas-bearing formation of any level-one for being provided with blast fence
In, blast fence setting is intracavitary in each uniform flow, and is located at the gas outlet connecting in the even gas-bearing formation of upper level with the sub- chamber of the uniform flow
At opposite position；And on the circumferencial direction of the gas outlet, the outer diameter of blast fence is adapted with the diameter of gas outlet.?
In practical application, blast fence can be fixed on the uniform flow daughter board in the even gas-bearing formation of upper level using the fixed form of suspention.
By blast fence, the reaction gas that can be flowed out to gas outlet on the other side from the even gas-bearing formation of upper level is played
Inhibition, so as to so that air-flow can not continue along when front direction flows, and while converting flow direction diffusely more
Uniformly.
Preferably, the shape of the said flow baffle orthographic projection shape on the surface opposite with gas outlet and the gas outlet
Be adapted, and said flow baffle the surface opposite with gas outlet can for plane, arc convex as shown in Figure 6 or
Person's conical surface etc..
It should be noted that be three by the branch quantity that each subelement distributes in the present embodiment, but it is of the invention
It is not limited thereto, in practical applications, the branch quantity distributed by each subelement is to set as the case may be
Be four or more, by the even gas-bearing formation of i-stage each subelement distribution more than four branches be evenly distributed on (i-1)-th grade it is even
It is looped around in gas-bearing formation on the circumference of branch periphery corresponding with the subelement.
The other structures and function of inlet duct provided in this embodiment are identical as above-mentioned first embodiment, no longer superfluous herein
It states.
As another technical solution, the embodiment of the present invention also provides a kind of semiconductor processing equipment comprising reaction chamber
Room and for the reaction chamber provide reaction gas inlet duct, the inlet duct use above-mentioned each embodiment mention
The inlet duct of confession.
Semiconductor processing equipment provided in an embodiment of the present invention is provided by using the above-mentioned each embodiment of the present invention
Inlet duct not only can be improved the indoor flow distribution evenness of reaction chamber, but also having for adjusting gas flow can be improved
Effect property and efficiency, so as to improve process efficiency.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (8)
1. a kind of inlet duct comprising air inlet and inlet plenum, the inlet plenum are anti-for will flow out from the air inlet
It answers and is delivered in reaction chamber at the top of gas autoreaction chamber, which is characterized in that the inlet plenum includes N grades of even gas-bearing formations, and N is
Integer greater than 1；Wherein,
1st grade of even gas-bearing formation includes 1 subelement, for will the reaction gas from the air inlet along perpendicular to conveying reaction gas
The direction of body evenly distributes at least two branches；The even gas-bearing formation of i-stage includes multiple subelements, and the son in the even gas-bearing formation of i-stage
Element number is equal to the summation for the branch quantity distributed by subelements all in (i-1)-th grade of even gas-bearing formation, and in the even gas-bearing formation of i-stage
Each subelement correspondingly by each branch distributed by subelements all in (i-1)-th grade of even gas-bearing formation along perpendicular to conveying
The direction of reaction gas evenly distributes at least two branches, i=2,3 ..., N again；All subelements in N grades of even gas-bearing formations
For will be delivered in the reaction chamber by each branch respectively distributed；
1~N-1 grades of even gas-bearing formations convey reaction gas step by step in the horizontal direction, and in 1~N-1 grades of even gas-bearing formations, by each
The branch quantity of subelement distribution is two；N grades of even gas-bearing formations vertically convey reaction gas, and in N grades of even gas-bearing formations
In, it is at least four by the branch quantity that each subelement distributes, and be even number.
2. inlet duct according to claim 1, which is characterized in that each subelement includes that the even gas-bearing formation where it is defeated
The sub- chamber of the uniform flow for sending the direction of reaction gas to set gradually and shunting daughter board, and be arranged at intervals at least on the shunting daughter board
Two gas outlets, the quantity of the gas outlet are equal with the branch quantity distributed by the subelement；At least two gas outlet
It connect with the sub- chamber of the uniform flow, and is uniformly distributed relative to the sub- chamber of the uniform flow along the direction perpendicular to conveying reaction gas, and
And the center line about the sub- chamber of the uniform flow is symmetrical；Wherein,
The air inlet is connect with the sub- chamber of uniform flow in the 1st grade of even gas-bearing formation, and is located at the center position of the sub- chamber of the uniform flow；
The summation of gas outlet quantity is equal to the summation of the sub- chamber quantity of uniform flow in the even gas-bearing formation of i-stage, and i-th-in (i-1)-th grade of even gas-bearing formation
Each gas outlet is connect with the sub- chamber of uniform flow each in the even gas-bearing formation of i-stage correspondingly in 1 grade of even gas-bearing formation, and (i-1)-th grade even
Each gas outlet is located at the center position of the corresponding sub- chamber of uniform flow in the even gas-bearing formation of i-stage in gas-bearing formation；
Each gas outlet in N grades of even gas-bearing formations is connect with the reaction chamber.
3. inlet duct according to claim 1, which is characterized in that the quantity of the air inlet is one or more, and
Multiple air inlets are arranged successively along the direction perpendicular to conveying reaction gas；
The quantity of the inlet plenum is corresponding with the quantity of the air inlet, and the inlet plenum correspondingly will from it is described into
The reaction gas of port outflow is delivered in reaction chamber.
4. inlet duct according to claim 2, which is characterized in that the gas outlet diameter in the even gas-bearing formation of the same level is less than next
Interval in the even gas-bearing formation of grade between corresponding two neighboring gas outlet.
5. inlet duct according to claim 2, which is characterized in that right for each subelement in even gas-bearing formation at the same level
The gas outlet diameter in each subelement in the middle part of reaction chamber described in Ying Yu, which is less than or greater than, corresponds to the reaction chamber two
Gas outlet diameter in each subelement of side edge, alternatively, corresponding in each subelement of reaction chamber different location
Gas outlet diameter is identical.
6. inlet duct according to claim 5, which is characterized in that described from the 1st grade of even gas-bearing formation to N grades of even gas-bearing formations
The diameter of gas outlet is reduced step by step by preset ratio, and/or the interval between two gas outlets adjacent in even gas-bearing formation at the same level is pressed
Preset ratio reduces step by step.
7. inlet duct according to claim 2, which is characterized in that the gas outlet is round clear opening, rectangular straight-through
Hole, round taper hole or square cone hole.
8. a kind of semiconductor processing equipment comprising reaction chamber and for the reaction chamber provide reaction gas into
Device of air, which is characterized in that the inlet duct uses inlet duct described in claim 1-7 any one.
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| CN102576661A (en) * | 2009-08-31 | 2012-07-11 | 圆益Ips股份有限公司 | Gas injection apparatus and substrate processing apparatus using same |
| US20140030056A1 (en) * | 2012-07-25 | 2014-01-30 | Applied Materials, Inc. | Process gas flow guides for large area plasma enhanced chemical vapor deposition systems and methods |
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