CN105734675B - A kind of wafer oxidation high temperature diffusion furnace tube - Google Patents
A kind of wafer oxidation high temperature diffusion furnace tube Download PDFInfo
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- CN105734675B CN105734675B CN201610247599.8A CN201610247599A CN105734675B CN 105734675 B CN105734675 B CN 105734675B CN 201610247599 A CN201610247599 A CN 201610247599A CN 105734675 B CN105734675 B CN 105734675B
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- air inlet
- air
- tube body
- high temperature
- boiler tube
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
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Abstract
The invention discloses a kind of wafer oxidation high temperature diffusion furnace tube,Including boiler tube body,There is inner chamber in boiler tube body,The first air inlet is provided with one end of boiler tube body,First air inlet is provided with the first even device of air,The first air inlet pipe outside first even device of air connection,The second air inlet is provided with the other end of boiler tube body,Second air inlet is provided with the second even device of air,The second air inlet pipe outside second even device of air connection,And first air inlet be arranged on the upper end of boiler tube body side,Second air inlet is arranged on the lower end of boiler tube body opposite side,Exhaust port is provided with the lower end of boiler tube body,Exhaust port is provided with filter,Exhaust pipe outside filter connection,The present invention uses two air inlets of asymmetric setting,And the even device of air of installation at air inlet,The gas into inner chamber can further be filtered,The uniformity of gas can be ensured simultaneously,Improve the uniformity of wafer oxidation.
Description
Technical field
The present invention relates to field of semiconductor devices, specially a kind of wafer oxidation high temperature diffusion furnace tube.
Background technology
Diffusion furnace tube is to be used to being diffused silicon chip, aoxidize and sintering etc. the one of technique in fabrication of semiconductor device
Kind heat-processing equipment.Key reaction device is generally divided into two kinds of horizontal and vertical type, reaction of the semi-conducting material in high-purity
Intracavitary carries out pyroreaction, and this process, which generally requires, to be passed through different types of gas or carry out vacuumize process to cavity.Entirely
Production process needs operation, production equipment to need pure, light, high temperature resistant, and existing wafer oxidation stove is generally through type and entered
Gas port, and one is only set, although setting gas control valve, after gas enters boiler tube, it is distributed in inhomogeneities, easily
Cause wafer surface oxidation uneven, influence wafer quality.
The content of the invention
It is an object of the invention to provide a kind of wafer oxidation high temperature diffusion furnace tube, to solve to carry in above-mentioned background technology
The problem of going out.
To achieve the above object, the present invention provides following technical scheme：A kind of wafer oxidation high temperature diffusion furnace tube, bag
Include boiler tube body, there is inner chamber in the boiler tube body, be provided with the first air inlet in one end of the boiler tube body, described first
Air inlet is provided with the first even device of air, the first air inlet pipe outside the first even device of air connection, in the boiler tube body
The other end be provided with the second air inlet, second air inlet is provided with the second even device of air, the second even device of air connection
The second outside air inlet pipe, and first air inlet is arranged on the upper end of boiler tube body side, second air inlet is set
In the lower end of boiler tube body opposite side, exhaust port is provided with the lower end of the boiler tube body, the exhaust port is provided with
Filter, the exhaust pipe outside filter connection.
Preferably, the described first even device of air and the second even device of air structure are completely the same, including high temperature resistant framework, in institute
State high temperature resistant framework one end and be provided with air inlet, the first even gas-bearing formation, the second even gas-bearing formation, the 3rd even gas are provided with the high temperature resistant framework
Layer, and the first even gas-bearing formation, the second even gas-bearing formation, the 3rd even gas-bearing formation and high temperature resistant framework vertical interlaced are arranged, in the resistance to height
The other end of warm framework is provided with porous material layer, and the porous material layer includes substrate layer, adhesive layer, microporous teflon membran
Layer, the substrate layer connect microporous teflon membran layer, the micropore hole of the microporous teflon membran layer by adhesive layer
Footpath is 1 micron -20 microns.
Preferably, the filter includes cylinder, and the cylinder is " T " character form structure, and the bottom of the cylinder is provided with
Sealant, several micropores, and the side wall annular in shape for being distributed in cylinder are uniformly provided with the side wall of the cylinder.
Compared with prior art, the beneficial effects of the invention are as follows：Novel in structural design of the present invention, using asymmetric setting
Two air inlets, the gas that can ensure to enter are distributed in the upper and lower part of wafer, and the even gas dress of installation at air inlet
Put, the even device of air of use includes multiple even gas-bearing formations and porous material layer, and multiple even gas-bearing formations are staggered, and can ensure gas stream
Logical uniformity, the porous material layer of use further can carry out uniform gas distribution to gas, ensure that into inner chamber gas
Uniformity, improve the uniformity of wafer oxidation；The filter that the other present invention uses, it is possible to increase gas filtration speed, and
Gas after filtering is discharged from the micropore of cylinder lateral wall, it is possible to increase tail gas expulsion efficiency.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the present invention；
Fig. 2 is the even device of air structural representation of the present invention；
Fig. 3 is the porous material layer sectional view of the present invention；
Fig. 4 is the filter apparatus configuration schematic diagram of the present invention；
In figure：1st, boiler tube body；2nd, inner chamber；3rd, the first air inlet；4th, the first even device of air；5th, the first air inlet pipe；6th,
Two air inlets；7th, the second even device of air；8th, the second air inlet pipe；9th, exhaust port；10th, filter；11st, exhaust pipe；12、
High temperature resistant framework；13rd, air inlet；14th, the first even gas-bearing formation；15th, the second even gas-bearing formation；16th, the 3rd even gas-bearing formation；17th, porous material layer；
18th, substrate layer；19th, adhesive layer；20th, microporous teflon membran layer；21st, cylinder；22nd, sealant；23rd, micropore.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Fig. 1-4 are referred to, the present invention provides a kind of technical scheme：A kind of wafer oxidation high temperature diffusion furnace tube, including stove
Tube body 1, boiler tube body 1 is interior to have inner chamber 2, and the first air inlet 3 is provided with one end of boiler tube body 1, is set on the first air inlet 3
There is the first even device of air 4, the first even device of air 4 connects the first air inlet pipe 5 of outside, and the is provided with the other end of boiler tube body 1
Two air inlets 6, the second air inlet 6 are provided with the second even device of air 7, and the second even device of air 7 connects the second air inlet pipe 8 of outside,
And first air inlet 3 be arranged on the upper end of the side of boiler tube body 1, the second air inlet 6 is arranged under the opposite side of boiler tube body 1
End, exhaust port 9 is provided with the lower end of boiler tube body 1, exhaust port 9 is provided with filter 10, and filter 10 connects
Outside exhaust pipe 11.The even gas-bearing formation of the present invention also use poromerics, and micro- for 10 microns -500 microns using aperture
Hole ceramics.
In the present embodiment, the first even even structure of device of air 7 of device of air 4 and second is completely the same, including high temperature resistant framework 12,
It is provided with air inlet 13 in the one end of high temperature resistant framework 12, the first even gas-bearing formation 14, the second even gas-bearing formation 15, the is provided with high temperature resistant framework 12
Three even gas-bearing formations 16, and the first even gas-bearing formation 14, the second even gas-bearing formation 15, the 3rd even gas-bearing formation 16 and the vertical interlaced cloth of high temperature resistant framework 12
Put, porous material layer 17 be provided with the other end of high temperature resistant framework 12, porous material layer 17 include substrate layer 18, adhesive layer 19,
Microporous teflon membran layer 20, substrate layer 18 connect microporous teflon membran layer 20, polytetrafluoroethylene (PTFE) by adhesive layer 19
The micropore size of microporous film layers 20 is 1 micron -20 microns, and substrate layer material is terylene, polyimide fiber, polyphenylene sulfide fibre
One or more in dimension, aramid fiber, polytetrafluoroethylene fibre, acrylic fibers, polypropylene fibre or polymethylmethacrylate fibers, this
Invention uses two air inlets of asymmetric setting, and the gas that can ensure to enter is distributed in the upper and lower part of wafer, and
Even device of air is installed at air inlet, the even device of air of use includes multiple even gas-bearing formations and porous material layer, and multiple even gas-bearing formations are handed over
Mistake is set, and can ensure the uniformity of gas circulation, and the porous material layer of use further can carry out uniform gas distribution to gas,
The uniformity into inner chamber gas is ensure that, improves the uniformity of wafer oxidation.
In the present embodiment, filter 10 includes cylinder 21, and cylinder 21 is " T " character form structure, and the bottom of cylinder 21 is provided with
Sealant 22, several micropores 23, and the side wall annular in shape for being distributed in cylinder 21, this hair are uniformly provided with the side wall of cylinder 21
It is bright to use Millipore filtration techniques, it is possible to increase gas filtration speed, and the gas after filtering is discharged from the micropore of cylinder lateral wall, energy
Enough improve tail gas expulsion efficiency.
Every technical staff's notice：Although the present invention describes according to above-mentioned embodiment, of the invention
Invention thought be not limited to that invention, any repacking with inventive concept, will all include this patent protection of the patent right
In the range of.
Claims (3)
1. a kind of wafer oxidation high temperature diffusion furnace tube, including boiler tube body（1）, it is characterised in that：The boiler tube body（1）
It is interior that there is inner chamber（2）, in the boiler tube body（1）One end be provided with the first air inlet（3）, first air inlet（3）On set
There is the first even device of air（4）, the first even device of air（4）The first air inlet pipe outside connection（5）, in the boiler tube body
（1）The other end be provided with the second air inlet（6）, second air inlet（6）It is provided with the second even device of air（7）, described second
Even device of air（7）The second air inlet pipe outside connection（8）, and first air inlet（3）It is arranged on boiler tube body（1）Side
Upper end, second air inlet（6）It is arranged on boiler tube body（1）The lower end of opposite side, in the boiler tube body（1）Lower end set
There is exhaust port（9）, the exhaust port（9）Provided with filter（10）, the filter（10）Outside connection
Exhaust pipe（11）.
A kind of 2. wafer oxidation high temperature diffusion furnace tube according to claim 1, it is characterised in that：The first even gas dress
Put（4）With the second even device of air（7）Structure is completely the same, including high temperature resistant framework（12）, in the high temperature resistant framework（12）One
End is provided with air inlet（13）, the high temperature resistant framework（12）Inside it is provided with the first even gas-bearing formation（14）, the second even gas-bearing formation（15）, it is the 3rd even
Gas-bearing formation（16）, and the first even gas-bearing formation（14）, the second even gas-bearing formation（15）, the 3rd even gas-bearing formation（16）With high temperature resistant framework（12）Hang down
Straight interlaced arrangement, in the high temperature resistant framework（12）The other end be provided with porous material layer（17）, the porous material layer（17）
Including substrate layer（18）, adhesive layer（19）, microporous teflon membran layer（20）, the substrate layer（18）Pass through adhesive layer（19）
Connect microporous teflon membran layer（20）, the microporous teflon membran layer（20）Micropore size for 1 micron -20 it is micro-
Rice.
A kind of 3. wafer oxidation high temperature diffusion furnace tube according to claim 1, it is characterised in that：The filter
（10）Including cylinder（21）, the cylinder（21）For " T " character form structure, the cylinder（21）Bottom be provided with sealant（22）,
In the cylinder（21）Side wall on be uniformly provided with several micropores（23）, and annularly it is distributed in cylinder（21）Side wall.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610247599.8A CN105734675B (en) | 2016-04-19 | 2016-04-19 | A kind of wafer oxidation high temperature diffusion furnace tube |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610247599.8A CN105734675B (en) | 2016-04-19 | 2016-04-19 | A kind of wafer oxidation high temperature diffusion furnace tube |
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| CN105734675A CN105734675A (en) | 2016-07-06 |
| CN105734675B true CN105734675B (en) | 2017-12-19 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107338479B (en) * | 2017-08-31 | 2018-07-06 | 长江存储科技有限责任公司 | A kind of inlet duct and method of vertical diffusion furnace |
| CN109023530A (en) * | 2018-09-25 | 2018-12-18 | 胡新军 | A kind of High temperature diffusion furnace body |
| CN112466991A (en) * | 2020-11-16 | 2021-03-09 | 江苏润阳悦达光伏科技有限公司 | Alkaline polishing preparation process of SE battery |
| CN113659435B (en) * | 2021-06-24 | 2023-06-09 | 威科赛乐微电子股份有限公司 | Oxidation process of VCSEL chip |
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| CN201793816U (en) * | 2010-09-29 | 2011-04-13 | 常州天合光能有限公司 | Multi-point air inlet device for upper and lower air inlet pipes at tail of phosphorus diffusion furnace |
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Effective date of registration: 20201201 Address after: 314000 Floor 15 of Block B of Zhejiang Tsinghua Yangtze River Delta Research Institute, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: INSTITUTE OF FLEXIBLE ELECTRONICS TECHNOLOGY OF THU, ZHEJIANG Address before: 325000 No. 687 Pearl Road, Binhai Economic Zone, Wenzhou economic and Technological Development Zone, Zhejiang, China Patentee before: WENZHOU JULIANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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