CN105734675A - High-temperature diffusion furnace tube for wafer oxidization - Google Patents
High-temperature diffusion furnace tube for wafer oxidization Download PDFInfo
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- CN105734675A CN105734675A CN201610247599.8A CN201610247599A CN105734675A CN 105734675 A CN105734675 A CN 105734675A CN 201610247599 A CN201610247599 A CN 201610247599A CN 105734675 A CN105734675 A CN 105734675A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
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Abstract
The invention discloses a high-temperature diffusion furnace tube for wafer oxidization. The high-temperature diffusion furnace tube for wafer oxidization comprises a furnace tube body which is internally provided with an inner cavity; a first gas inlet is formed in one end of the furnace tube body and provided with a first gas evening device which is connected with a first external gas inlet pipe, a second gas inlet is formed in the other end of the furnace tube body and provided with a second gas evening device which is connected with a second external gas inlet pipe, the first gas inlet is formed in the upper end of one side of the furnace tube body, the second gas inlet is formed in the lower end of the other side of the furnace tube body, an exhaust discharge port is formed in the lower end of the furnace tube body and provided with a filtering device, and the filtering device is connected with an external exhaust pipeline. The two gas inlets which are not symmetrically formed are adopted and are both provided with the corresponding gas evening device, gas entering the inner cavity can be further filtered, meanwhile gas uniformity can be guaranteed, and wafer oxidization uniformity is improved.
Description
Technical field
The present invention relates to field of semiconductor devices, be specially a kind of wafer oxidation high temperature diffusion furnace tube.
Background technology
Diffusion furnace tube is for silicon chip being diffused, aoxidizes and a kind of heat-processing equipment of the technique such as sintering in fabrication of semiconductor device.Dominant response device is generally divided into horizontal and vertical type two kinds, and semi-conducting material carries out pyroreaction in the reaction chamber of high-purity, and this process is it is generally required to pass into different types of gas or cavity is carried out evacuation process.Whole production process needs operation, production equipment to need pure, light, high temperature resistant, existing wafer oxidation stove is generally through type air inlet, and only arrange one, although arranging gas control valve, after but gas enters boiler tube, it is distributed in inhomogeneities, it is easy to cause wafer surface oxidation uneven, affect wafer quality.
Summary of the invention
It is an object of the invention to provide a kind of wafer oxidation high temperature diffusion furnace tube, with the problem solving to propose in above-mentioned background technology.
For achieving the above object, the present invention provides following technical scheme: a kind of wafer oxidation high temperature diffusion furnace tube, including boiler tube body, described boiler tube is originally internal has inner chamber, it is provided with the first air inlet in one end of described boiler tube body, described first air inlet is provided with the first even device of air, the first air inlet pipe outside described first even device of air connection, the other end at described boiler tube body is provided with the second air inlet, described second air inlet is provided with the second even device of air, the second air inlet pipe outside described second even device of air connection, and described first air inlet is arranged on the upper end of boiler tube body side, described second air inlet is arranged on the lower end of boiler tube body opposite side, it is provided with exhaust port in the lower end of described boiler tube body, described exhaust port is provided with defecator, exhaust pipe outside the connection of described defecator.
Preferably, described first even device of air and the second even device of air structure are completely the same, including high temperature resistant framework, it is provided with air inlet in described high temperature resistant framework one end, the first even gas-bearing formation it is provided with in described high temperature resistant framework, second even gas-bearing formation, 3rd even gas-bearing formation, and described first even gas-bearing formation, second even gas-bearing formation, 3rd even gas-bearing formation is arranged with high temperature resistant framework vertical interlaced, the other end at described high temperature resistant framework is provided with porous material layer, described porous material layer includes substrate layer, adhesive layer, microporous teflon membran layer, described substrate layer connects microporous teflon membran layer by adhesive layer, the micropore size of described microporous teflon membran layer is 1 micron-20 microns.
Preferably, described defecator includes cylinder, and described cylinder is " T " character form structure, and the bottom of described cylinder is provided with sealant, is uniformly provided with several micropores, and is distributed in the sidewall of cylinder in the form of a ring on the sidewall of described cylinder.
Compared with prior art, the invention has the beneficial effects as follows: present configuration is novel in design, adopt two air inlets of asymmetric setting, ensure that the gas of entrance is distributed in the upper and lower of wafer, and even device of air is all installed at air inlet place, the even device of air adopted includes multiple even gas-bearing formation and porous material layer, multiple even gas-bearing formations are crisscross arranged, ensure that the uniformity that gas circulates, gas can be carried out uniform gas distribution by porous material layer further that adopt, ensure that the uniformity entering inner chamber gas, improve the uniformity of wafer oxidation；Additionally the present invention adopt defecator, it is possible to increase gas filtration speed, and filter after gas discharge from the micropore of cylinder lateral wall, it is possible to increase tail gas expulsion efficiency.
Accompanying drawing explanation
Fig. 1 is the overall structure schematic diagram of the present invention；
Fig. 2 is the even device of air structural representation of the present invention；
Fig. 3 is the porous material layer sectional view of the present invention；
Fig. 4 is the filter apparatus configuration schematic diagram of the present invention；
In figure: 1, boiler tube body；2, inner chamber；3, the first air inlet；4, the first even device of air；5, the first air inlet pipe；6, the second air inlet；7, the second even device of air；8, the second air inlet pipe；9, exhaust port；10, defecator；11, exhaust pipe；12, high temperature resistant framework；13, air inlet；14, the first even gas-bearing formation；15, the second even gas-bearing formation；16, the 3rd even gas-bearing formation；17, porous material layer；18, substrate layer；19, adhesive layer；20, microporous teflon membran layer；21, cylinder；22, sealant；23, micropore.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
Refer to Fig. 1-4, the present invention provides a kind of technical scheme: a kind of wafer oxidation high temperature diffusion furnace tube, including boiler tube body 1, there is in boiler tube body 1 inner chamber 2, the first air inlet 3 it is provided with in one end of boiler tube body 1, first air inlet 3 is provided with the first even device of air 4, first even device of air 4 connects the first air inlet pipe 5 of outside, the other end at boiler tube body 1 is provided with the second air inlet 6, second air inlet 6 is provided with the second even device of air 7, second even device of air 7 connects the second air inlet pipe 8 of outside, and first air inlet 3 be arranged on the upper end of boiler tube body 1 side, second air inlet 6 is arranged on the lower end of boiler tube body 1 opposite side, it is provided with exhaust port 9 in the lower end of boiler tube body 1, exhaust port 9 is provided with defecator 10, defecator 10 connects the exhaust pipe 11 of outside.The even gas-bearing formation of the present invention is also adopted by poromerics and the micropore ceramics using aperture to be 10 microns-500 microns.
nullIn the present embodiment，First even device of air 4 and the second even device of air 7 structure are completely the same，Including high temperature resistant framework 12，It is provided with air inlet 13 in high temperature resistant framework 12 one end，The first even gas-bearing formation 14 it is provided with in high temperature resistant framework 12、Second even gas-bearing formation 15、3rd even gas-bearing formation 16，And the first even gas-bearing formation 14、Second even gas-bearing formation 15、3rd even gas-bearing formation 16 is arranged with high temperature resistant framework 12 vertical interlaced，The other end at high temperature resistant framework 12 is provided with porous material layer 17，Porous material layer 17 includes substrate layer 18、Adhesive layer 19、Microporous teflon membran layer 20，Substrate layer 18 connects microporous teflon membran layer 20 by adhesive layer 19，The micropore size of microporous teflon membran layer 20 is 1 micron-20 microns，Substrate layer material is terylene、Polyimide fiber、Polyphenylene sulfide fibre、Aramid fiber、Polytetrafluoroethylene fibre、Acrylon、One or more in polypropylene fibre or polymethylmethacrylate fibers，The present invention adopts two air inlets of asymmetric setting，Ensure that the gas of entrance is distributed in the upper and lower of wafer，And even device of air is all installed at air inlet place，The even device of air adopted includes multiple even gas-bearing formation and porous material layer，Multiple even gas-bearing formations are crisscross arranged，Ensure that the uniformity that gas circulates，Gas can be carried out uniform gas distribution by porous material layer further that adopt，Ensure that the uniformity entering inner chamber gas，Improve the uniformity of wafer oxidation.
In the present embodiment, defecator 10 includes cylinder 21, cylinder 21 is " T " character form structure, the bottom of cylinder 21 is provided with sealant 22, is uniformly provided with several micropores 23, and is distributed in the sidewall of cylinder 21 in the form of a ring on the sidewall of cylinder 21, the present invention adopts Millipore filtration techniques, gas filtration speed can be improved, and the gas after filtration is discharged from the micropore of cylinder lateral wall, it is possible to increase tail gas expulsion efficiency.
Every technical staff's notice: although the present invention describes according to above-mentioned detailed description of the invention, but the invention thought of the present invention is not limited to that invention, the repacking of any utilization inventive concept, all will include in this patent scope of patent protection.
Claims (3)
- null1. a wafer oxidation high temperature diffusion furnace tube,Including boiler tube body (1)，It is characterized in that: in described boiler tube body (1), there is inner chamber (2)，It is provided with the first air inlet (3) in one end of described boiler tube body (1)，Described first air inlet (3) is provided with the first even device of air (4)，The first air inlet pipe (5) outside described first even device of air (4) connection，The other end described boiler tube body (1) is provided with the second air inlet (6)，Described second air inlet (6) is provided with the second even device of air (7)，The second air inlet pipe (8) outside described second even device of air (7) connection，And described first air inlet (3) is arranged on the upper end of boiler tube body (1) side，Described second air inlet (6) is arranged on the lower end of boiler tube body (1) opposite side，It is provided with exhaust port (9) in the lower end of described boiler tube body (1)，Described exhaust port (9) is provided with defecator (10)，Exhaust pipe (11) outside described defecator (10) connection.
- null2. a kind of wafer oxidation high temperature diffusion furnace tube according to claim 1，It is characterized in that: described first even device of air (4) and the second even device of air (7) structure are completely the same，Including high temperature resistant framework (12)，It is provided with air inlet (13) in described high temperature resistant framework (12) one end，The first even gas-bearing formation (14) it is provided with in described high temperature resistant framework (12)、Second even gas-bearing formation (15)、3rd even gas-bearing formation (16)，And described first even gas-bearing formation (14)、Second even gas-bearing formation (15)、3rd even gas-bearing formation (16) is arranged with high temperature resistant framework (12) vertical interlaced，The other end described high temperature resistant framework (12) is provided with porous material layer (17)，Described porous material layer (17) includes substrate layer (18)、Adhesive layer (19)、Microporous teflon membran layer (20)，Described substrate layer (18) connects microporous teflon membran layer (20) by adhesive layer (19)，The micropore size of described microporous teflon membran layer (20) is 1 micron-20 microns.
- 3. a kind of wafer oxidation high temperature diffusion furnace tube according to claim 1, it is characterized in that: described defecator (10) includes cylinder (21), described cylinder (21) is " T " character form structure, the bottom of described cylinder (21) is provided with sealant (22), the sidewall of described cylinder (21) is uniformly provided with several micropores (23), and is distributed in the sidewall of cylinder (21) in the form of a ring.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610247599.8A CN105734675B (en) | 2016-04-19 | 2016-04-19 | A kind of wafer oxidation high temperature diffusion furnace tube |
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| CN201610247599.8A CN105734675B (en) | 2016-04-19 | 2016-04-19 | A kind of wafer oxidation high temperature diffusion furnace tube |
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| CN105734675B CN105734675B (en) | 2017-12-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107338479A (en) * | 2017-08-31 | 2017-11-10 | 长江存储科技有限责任公司 | A kind of inlet duct and method of vertical diffusion furnace |
| CN109023530A (en) * | 2018-09-25 | 2018-12-18 | 胡新军 | A kind of High temperature diffusion furnace body |
| CN112466991A (en) * | 2020-11-16 | 2021-03-09 | 江苏润阳悦达光伏科技有限公司 | Alkaline polishing preparation process of SE battery |
| CN113659435A (en) * | 2021-06-24 | 2021-11-16 | 威科赛乐微电子股份有限公司 | Oxidation process of VCSEL chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107338479A (en) * | 2017-08-31 | 2017-11-10 | 长江存储科技有限责任公司 | A kind of inlet duct and method of vertical diffusion furnace |
| CN109023530A (en) * | 2018-09-25 | 2018-12-18 | 胡新军 | A kind of High temperature diffusion furnace body |
| CN112466991A (en) * | 2020-11-16 | 2021-03-09 | 江苏润阳悦达光伏科技有限公司 | Alkaline polishing preparation process of SE battery |
| CN113659435A (en) * | 2021-06-24 | 2021-11-16 | 威科赛乐微电子股份有限公司 | Oxidation process of VCSEL chip |
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| Publication number | Publication date |
|---|---|
| CN105734675B (en) | 2017-12-19 |
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Effective date of registration: 20201201 Address after: 314000 Floor 15 of Block B of Zhejiang Tsinghua Yangtze River Delta Research Institute, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: INSTITUTE OF FLEXIBLE ELECTRONICS TECHNOLOGY OF THU, ZHEJIANG Address before: 325000 No. 687 Pearl Road, Binhai Economic Zone, Wenzhou economic and Technological Development Zone, Zhejiang, China Patentee before: WENZHOU JULIANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |