CN201804848U - Oxidation unit used for manufacturing semiconductor device - Google Patents
Oxidation unit used for manufacturing semiconductor device Download PDFInfo
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- CN201804848U CN201804848U CN2010205237222U CN201020523722U CN201804848U CN 201804848 U CN201804848 U CN 201804848U CN 2010205237222 U CN2010205237222 U CN 2010205237222U CN 201020523722 U CN201020523722 U CN 201020523722U CN 201804848 U CN201804848 U CN 201804848U
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- microenvironment
- oxidation
- oxidation unit
- exhaust
- process duct
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Abstract
The utility model provides an oxidation unit used for manufacturing a semiconductor device, comprising a furnace body, a processing pipe, a bearing quartz boat, a lifting control part, a heat-insulation barrel, a furnace door and a microenvironment chamber, wherein the processing pipe is positioned in the furnace body; the bearing quartz boat is positioned in the processing pipe; the lifting control part is used for controlling the lifting of the bearing quartz boat; the heat-insulation barrel is positioned below the lifting control part and is used for retaining the temperature in the processing pipe; the furnace door is positioned at the bottom of the processing pipe; and the microenvironment chamber is connected with the processing pipe through the furnace door. The oxidation unit is characterized in that the microenvironment chamber comprises a microenvironment exhaust device. With the oxidation unit used for manufacturing the semiconductor device, the residual gas in oxidation reaction entering the microenvironment chamber from the processing pipe is discharged uniformly, the phenomenon that the oxidation process of the existing silicon wafer and the next group of silicon wafers is affected as the oxygen content in the residual gas in oxidation reaction is too high is prevented, and the pressure in the microenvironment chamber is kept stable in the exhaust process.
Description
Technical field
The utility model relates to a kind of oxidation unit that is used for producing the semiconductor devices, and relates in particular to a kind of oxidation unit that is used for producing the semiconductor devices that exhaust apparatus is further improved.
Background technology
In semiconductor technology, need on Semiconductor substrate, form metallic film and oxide-film, in order to prevent the problems such as diffusion of impurity, in technology, use devices such as CVD device, oxidation membrane formation device and disperser.Wherein have, the vertical arrangement of a plurality of Semiconductor substrate is positioned in the vertical heater of heat, by injecting the device that reacting gas carries out oxidation reaction.
Silicon chip is a kind of important semi-conducting material, and its processing technology, particularly oxidation technology are a kind of to the very high technology of the residing environmental requirement of silicon chip.
The oxidation unit that is used for producing the semiconductor devices at present is horizontal type structure mostly, when technology finishes, the oxidation reaction residue gas of reaction chamber is known from experience with the withdrawing from and be emitted in the factory building of silicon chip, so the horizontal type structure exhaust apparatus is difficult to the oxidation reaction residual gas be collected and discharged by the factory building discharge tube.For the semiconductor fabrication process that is of a size of more than the 300mm, horizontal type device can not satisfy the demand of technology, adopts at present mostly vertical oxidation unit, and the transmission of silicon chip is in the environment of a constant pressure and hypoxemia (microenvironment system).
As shown in Figure 1, the oxidation unit that is used for producing the semiconductor devices comprises: body of heater 1; Be positioned at the process duct 2 of body of heater 1 inside, in this process duct 2, carry out the oxidation reaction of silicon chip; Be arranged in the quartz boat 3 of process duct 2 carrying silicon chips; Be positioned at process duct 2 and be used for the lifting control part 12 of lifting quartz boat 3; Be positioned at the heat-preserving container 4 that lifting control part 12 bottoms also can keep process duct 2 internal temperatures; Be positioned at the fire door 5 of process duct 2 bottoms; The microenvironment chamber 6 that links to each other with process duct by fire door 5; The air supply opening and the exhaust outlet (not indicating among the figure) that are connected and feed oxidation reaction gas respectively and discharge the oxidation reaction residual gas with process duct.Silicon chip can not be transferred in the external environment condition after oxidation reaction is finished immediately, preserves and need leave the microenvironment chamber earlier in.After though the oxidation reaction in the process duct finishes, to discharge the oxidation reaction residual gas by exhaust outlet, but residual gas can not be discharged totally fully in actual process, to finish the silicon chip of oxidation reaction and send in the process of microenvironment chamber and open fire door by the carrying quartz boat at the oxidation unit that is used for producing the semiconductor devices, oxidation reaction residual gas in the undischarged process duct 2 also can be discharged in the microenvironment chamber thereupon, influence the pressure and the oxygen content of microenvironment chamber, if oxygen content is too high, will produce harmful effect to the semiconductor device after the oxidation, and influence the oxidation reaction craft precision of next group silicon chip.
The present oxidation unit that is used for producing the semiconductor devices is not still having solution aspect the oxidation reaction residual gas of discharging reaction chamber, therefore, for satisfying the higher requirement of device, need to propose a kind of oxidation unit exhaust apparatus that is used for producing the semiconductor devices of new construction.
The utility model content
(1) technical issues that need to address
At first, avoid the oxidation reaction residual gas in the process duct to enter indoor continuation of microenvironment and the semiconductor element continuation reaction of wherein depositing; Secondly, how to make the pressure stability in the microenvironment chamber, and the quality that improves the semiconductor element after oxidation reaction finishes.
(2) technical scheme
The utility model provides a kind of oxidation unit that is used for producing the semiconductor devices, and comprising: body of heater; Be positioned at the process duct of above-mentioned body of heater; Be positioned at the quartz boat of above-mentioned process duct; Control the lifting control part of above-mentioned quartz boat lifting; Be positioned at the heat-preserving container that is used to keep the process duct internal temperature under the above-mentioned lifting control part; Be positioned at the fire door of above-mentioned process duct bottom; By the microenvironment chamber that above-mentioned fire door is connected with above-mentioned process duct, wherein, above-mentioned microenvironment chamber comprises the microenvironment exhaust apparatus.
Above-mentioned microenvironment exhaust apparatus comprises:
The ring network orifice plate, it is arranged on the above-mentioned fire door, which is provided with a plurality of mesh, and above-mentioned mesh is communicated with above-mentioned microenvironment chamber;
Gas collector, it is connected with above-mentioned ring network orifice plate, collects the oxidation reaction residual gas in the above-mentioned microenvironment chamber;
Exhaust portion, the one end is connected with the above-mentioned gas gathering-device, and the other end is connected with the building exhaust air mouth, is used for the residual body of above-mentioned oxidation reaction is discharged.
Above-mentioned exhaust portion comprises:
Reducer pipe, it is connected with the above-mentioned gas gathering-device;
Blast pipe, it is connected with above-mentioned reducer pipe;
The exhaust connecting portion, the one end is connected with above-mentioned blast pipe, and the other end is connected with above-mentioned building exhaust air pipe; And
The reducer pipe sealing ring is arranged on the above-mentioned reducer pipe.
(3) beneficial effect
A kind of oxidation unit that is used for producing the semiconductor devices that the utility model provides can will evenly be got rid of from the oxidation reaction residual gas that process duct enters in the microenvironment chamber, prevent that the oxygen content in the oxidation reaction residual gas is too high, the oxidation technology result of the existing silicon chip of influence and next group silicon chip, and make the pressure in the microenvironment chamber in exhaust process, also can keep stability.
Description of drawings
The oxidation unit structural representation of Fig. 1 for being used for producing the semiconductor devices in the prior art;
Fig. 2 is the oxidation unit structural representation that is used for producing the semiconductor devices of the utility model embodiment;
Fig. 3 is microenvironment exhaust apparatus structural representation in the oxidation unit that is used for producing the semiconductor devices of the utility model embodiment.
Among the figure: 1, body of heater; 2, process duct; 3, quartz boat; 4, heat-preserving container; 5, fire door; 6, microenvironment chamber; 7, ring network orifice plate; 7-1, mesh; 8, gas collector; 9, reducer pipe; 10, blast pipe; 11, exhaust connecting portion; 12, lifting control part.
Embodiment
Describe the oxidation unit that is used for producing the semiconductor devices that the utility model provides in detail below in conjunction with accompanying drawing.
As shown in Figure 2, the oxidation unit that is used for producing the semiconductor devices of this embodiment comprises: body of heater 1; Be positioned at the process duct 2 of body of heater 1, in this process duct 2, carry out the oxidation reaction of semiconductor element; Be positioned at the quartz boat 3 of process duct 2 and bearing semiconductor element; Control the lifting control part 12 of above-mentioned quartz boat lifting; Be positioned at the heat-preserving container 4 that the lifting control part is used to keep the process duct internal temperature for 12 times; Be arranged in the fire door (figure does not mark) of process duct 2 bottoms; The microenvironment chamber 6 that is connected with process duct 2 by fire door; The air supply opening and the exhaust outlet (not indicating among the figure) that are connected and feed oxidation reaction gas respectively and discharge the oxidation reaction residual gas with process duct 2.
Shown in Fig. 2-3, the microenvironment chamber comprises the microenvironment exhaust apparatus, and this environment exhaust apparatus comprises: ring network orifice plate 7, and it is arranged at around the above-mentioned fire door 5, which is provided with a plurality of mesh 7-1, and mesh 7-1 is communicated with microenvironment chamber 6; Gas collector 8, it is connected with ring network orifice plate 7, collects the oxidation reaction residual gas of 6 li of microenvironment chambers; And exhaust portion, the one end is connected with gas collector 8, and the other end is connected with the building exhaust air mouth, is used for above-mentioned oxidation reaction residual gas is discharged.
Exhaust portion comprises reducer pipe 9, and it is connected with gas collector 8; Blast pipe 10, it is connected with reducer pipe 9; Exhaust connecting portion 11, the one end is connected with blast pipe 10, and the other end is connected with the building exhaust air pipe.On reducer pipe 9, also be provided with the reducer pipe sealing ring, make gapless connection the between above-mentioned reducer pipe and the above-mentioned blast pipe, prevent gas leakage.
When using the oxidation unit that is used for producing the semiconductor devices provided by the utility model that semiconductor element is carried out oxidation reaction, with the semiconductor element for the treatment of oxidation reaction be carried on the quartz boat 3 send into process duct 2 inside by lifting control part 12 after, provide the reaction oxidizing gas by air supply opening, and semiconductor element is carried out oxidation reaction.After reaction finishes, open fire door semiconductor element is sent into 6 preservations of microenvironment chamber.
When the semiconductor element after oxidation reaction finishes was sent into microenvironment chamber 6, because that process duct interior oxidation reaction residual gas is discharged fully is clean, so the partial oxidation reaction residual gas was followed semiconductor element and is flow into together in the microenvironment chamber 6.This moment, the microenvironment exhaust apparatus was opened, residual gas in the microenvironment chamber 6 flows into ring network orifice plate 7 successively, collect by a plurality of mesh 7-1 in the ring network orifice plate 7 and by gas collector 8, by reducer pipe 9 and blast pipe 10, enter house exhaust by exhaust connecting portion 11 at last and discharge again.
A kind of oxidation unit that is used for producing the semiconductor devices that the utility model provides can evenly be got rid of from process duct and enters oxidation reaction residual gas in the microenvironment chamber, prevent that the oxygen content in the oxidation reaction residual gas is too high, the oxidation technology result of the existing silicon chip of influence and next group silicon chip, and make the pressure in the microenvironment chamber in exhaust process, also can keep stability.
It should be noted that at last: above execution mode only in order to the explanation the technical solution of the utility model, is not intended to limit; Although the utility model is had been described in detail with reference to aforementioned embodiments, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each execution mode is put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of each execution mode technical scheme of the utility model.
Claims (4)
1. an oxidation unit that is used for producing the semiconductor devices comprises: body of heater; Be positioned at the process duct of described body of heater; Be positioned at the carrying quartz boat of described process duct; Control the lifting control part of described carrying quartz boat lifting; Be positioned at the heat-preserving container that is used to keep the process duct internal temperature under the described lifting control part; Be positioned at the fire door of described process duct bottom; Microenvironment chamber by described fire door is connected with described process duct is characterized in that, described microenvironment chamber comprises the microenvironment exhaust apparatus.
2. the oxidation unit that is used for producing the semiconductor devices according to claim 1 is characterized in that, described microenvironment exhaust apparatus comprises:
The ring network orifice plate, it is arranged on the described fire door, which is provided with a plurality of mesh, and described mesh is communicated with described microenvironment chamber;
Gas collector, it is connected with described ring network orifice plate, collects the oxidation reaction residual gas in the described microenvironment chamber;
Exhaust portion, the one end is connected with described gas collector, and the other end is connected with the building exhaust air mouth, is used for described oxidation reaction residual gas is discharged.
3. the oxidation unit that is used for producing the semiconductor devices according to claim 2 is characterized in that, described exhaust portion comprises:
Reducer pipe, it is connected with described gas collector;
Blast pipe, it is connected with described reducer pipe;
The exhaust connecting portion, the one end is connected with described blast pipe, and the other end is connected with described building exhaust air mouth.
4. the oxidation unit that is used for producing the semiconductor devices according to claim 3 is characterized in that described reducer pipe is provided with the reducer pipe sealing ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205237222U CN201804848U (en) | 2010-09-08 | 2010-09-08 | Oxidation unit used for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205237222U CN201804848U (en) | 2010-09-08 | 2010-09-08 | Oxidation unit used for manufacturing semiconductor device |
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| Publication Number | Publication Date |
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| CN201804848U true CN201804848U (en) | 2011-04-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010205237222U Expired - Lifetime CN201804848U (en) | 2010-09-08 | 2010-09-08 | Oxidation unit used for manufacturing semiconductor device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103711937A (en) * | 2014-01-09 | 2014-04-09 | 北京七星华创电子股份有限公司 | Microenvironment exhaust control device of semiconductor device |
| CN103791714A (en) * | 2014-02-20 | 2014-05-14 | 北京七星华创电子股份有限公司 | Insulation barrel of vertical type furnace |
| CN106505016A (en) * | 2016-10-21 | 2017-03-15 | 北京七星华创电子股份有限公司 | There is the semiconductor heat treatment equipment and control method of process duct pressure control device |
| CN108109939A (en) * | 2016-11-24 | 2018-06-01 | 株式会社日立国际电气 | The manufacturing method of processing unit, exhaust system and semiconductor devices |
| CN115241093A (en) * | 2022-07-26 | 2022-10-25 | 北京北方华创微电子装备有限公司 | Semiconductor reaction chamber |
-
2010
- 2010-09-08 CN CN2010205237222U patent/CN201804848U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103711937A (en) * | 2014-01-09 | 2014-04-09 | 北京七星华创电子股份有限公司 | Microenvironment exhaust control device of semiconductor device |
| CN103791714A (en) * | 2014-02-20 | 2014-05-14 | 北京七星华创电子股份有限公司 | Insulation barrel of vertical type furnace |
| CN103791714B (en) * | 2014-02-20 | 2015-11-04 | 北京七星华创电子股份有限公司 | A kind of heat-preserving container of vertical heater |
| CN106505016A (en) * | 2016-10-21 | 2017-03-15 | 北京七星华创电子股份有限公司 | There is the semiconductor heat treatment equipment and control method of process duct pressure control device |
| CN108109939A (en) * | 2016-11-24 | 2018-06-01 | 株式会社日立国际电气 | The manufacturing method of processing unit, exhaust system and semiconductor devices |
| CN108109939B (en) * | 2016-11-24 | 2022-02-11 | 株式会社国际电气 | Processing apparatus, exhaust system, and method for manufacturing semiconductor device |
| CN115241093A (en) * | 2022-07-26 | 2022-10-25 | 北京北方华创微电子装备有限公司 | Semiconductor reaction chamber |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: North China Science and technology group Limited by Share Ltd. Address before: 100016, No. 1, Jiuxianqiao East Road, Beijing, Chaoyang District, building No. 2, M2 Patentee before: BEIJING SEVENSTAR ELECTRONIC Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180327 Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee before: North China Science and technology group Limited by Share Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110420 |