TW201531603A - Multi-cavity texturing system - Google Patents
Multi-cavity texturing system Download PDFInfo
- Publication number
- TW201531603A TW201531603A TW103114497A TW103114497A TW201531603A TW 201531603 A TW201531603 A TW 201531603A TW 103114497 A TW103114497 A TW 103114497A TW 103114497 A TW103114497 A TW 103114497A TW 201531603 A TW201531603 A TW 201531603A
- Authority
- TW
- Taiwan
- Prior art keywords
- reaction tank
- reaction groove
- cavity
- texturing system
- chamber
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
Abstract
Description
本發明係一種鏈式太陽能清洗設備和濕法處理設備,特別係一種應用於光伏行業中的多晶矽片的制絨清洗設備。The invention relates to a chain solar cleaning device and a wet processing device, in particular to a fluffing cleaning device for polycrystalline silicon wafers used in the photovoltaic industry.
多晶矽片的生產中,通常使用鏈式太陽能清洗設備對矽材進行制絨清洗處理。當矽片在和化學藥品發生反應時,會造成清洗設備的反應槽內的藥液濃度出現區域性不一致,以及反應槽內各點溫度存在差異性,這將導致矽片表面處理的均勻性大大降低。In the production of polycrystalline silicon wafers, the coffin is usually subjected to a texturing cleaning treatment using a chain solar cleaning device. When the bracts react with chemicals, the concentration of the liquid in the reaction tank of the cleaning equipment will be regionally inconsistent, and the temperature at each point in the reaction tank will be different, which will result in a large uniformity of the surface treatment of the bracts. reduce.
因此,改善反應槽內的藥液濃度差異,以及反應槽內各點藥液溫度差異,是業內亟待解決的技術問題。Therefore, improving the difference in the concentration of the chemical solution in the reaction tank and the difference in the temperature of the liquid at each point in the reaction tank are technical problems to be solved in the industry.
本發明為了解決上述技術問題,提供一種換液速度快、反應槽內液體濃度及溫度差異性小的多腔室制絨系統。In order to solve the above technical problems, the present invention provides a multi-chamber texturing system having a high liquid exchange rate, a small liquid concentration in a reaction tank, and a small temperature difference.
本發明提出的一種多腔室制絨系統,其包括反應槽及滾筒。反應槽中設有多對隔板並將反應槽分隔成多個工作液腔室,每對隔板的兩板之間為溢流迴圈的緩衝腔室,該緩衝腔室的底部設有輸出口,該輸出口透過管路與反應槽外的液體循環系統連接;隔板的高度低於反應槽周邊的高度。The invention provides a multi-chamber texturing system comprising a reaction tank and a drum. The reaction tank is provided with a plurality of pairs of partition plates and the reaction tank is divided into a plurality of working fluid chambers, and between the two plates of each pair of partition plates is a buffer chamber overflowing the loop, and the bottom of the buffer chamber is provided with an output. The outlet is connected to the liquid circulation system outside the reaction tank through a pipeline; the height of the separator is lower than the height of the periphery of the reaction tank.
本發明使用多對隔板將反應槽腔體分隔成多個工作液腔室,當槽體內液面到達一定高度時,反應槽內上層的藥液從隔板上部流入溢流迴圈的緩衝腔室而快速流走,從而加快反應槽內各區域藥液的換液速度,高效減少反應槽內各區域藥液濃度的差異性與溫度的差異,從而使矽片表面處理更均勻。本發明結構簡單,安裝維護方便,生產效率高。The invention uses a plurality of pairs of separators to divide the reaction tank cavity into a plurality of working fluid chambers. When the liquid level in the tank reaches a certain height, the liquid medicine in the upper layer of the reaction tank flows from the upper portion of the partition into the buffer chamber of the overflow loop. The chamber quickly flows away, thereby accelerating the liquid exchange rate of the liquid medicine in each area of the reaction tank, and effectively reducing the difference in the concentration of the liquid medicine in each area of the reaction tank and the temperature difference, thereby making the surface treatment of the bracts more uniform. The invention has simple structure, convenient installation and maintenance, and high production efficiency.
1‧‧‧反應槽1‧‧‧Reaction tank
2‧‧‧滾筒2‧‧‧Roller
3‧‧‧隔板3‧‧‧Baffle
4‧‧‧工作液腔室4‧‧‧Working fluid chamber
5‧‧‧緩衝腔室5‧‧‧buffer chamber
6‧‧‧管路6‧‧‧pipe
7‧‧‧周邊7‧‧‧around
第1圖為本發明較佳實施例的橫向剖切的結構示意圖。Figure 1 is a schematic cross-sectional view showing a preferred embodiment of the present invention.
下面結合附圖和實施例對本發明進行進一步的說明。The invention will now be further described with reference to the drawings and embodiments.
如第1圖所示,本發明較佳實施例提供的一種多腔室制絨系統,其包括一方條形的反應槽1和設於反應槽1內上部的運輸滾筒2。反應槽1中設有多對隔板3,並將反應槽1分隔成多個工作液腔室4,而每對隔板的兩板之間為溢流迴圈的緩衝腔室5,該緩衝腔室的底部設有輸出口,該輸出口透過管路6與反應槽外的液體循環系統連接。隔板3的高度低於反應槽1周邊7的高度。根據不同的要求,工作液腔室4的形狀、數量和位置可以選擇設置。As shown in FIG. 1, a multi-chamber texturing system according to a preferred embodiment of the present invention comprises a strip-shaped reaction tank 1 and a transport drum 2 disposed in the upper portion of the reaction tank 1. The reaction tank 1 is provided with a plurality of pairs of partitions 3, and the reaction tank 1 is divided into a plurality of working fluid chambers 4, and between the two plates of each pair of partition plates is a buffer chamber 5 overflowing the loop, the buffer The bottom of the chamber is provided with an output port which is connected through a line 6 to a liquid circulation system outside the reaction tank. The height of the partition 3 is lower than the height of the periphery 7 of the reaction tank 1. The shape, number and position of the working fluid chamber 4 can be selected according to different requirements.
本發明在反應槽體內的一些設有將反應槽腔體分隔的多對隔板,使反應槽中形成多個工作液腔室。當槽體內液面到達一定高度時,液體從隔板上部流入各對隔板之間的溢流迴圈的緩衝腔室,再透過反應槽下面的管路進入反應槽外的液體循環系統,進行熱交換後再輸入反應槽。這種結構可使得各個工作液腔室內上層的藥液同步均能快速流走,相比傳統的溢流裝置,本發明的多腔室結構可能藥液在槽體內隨意分散開,從而解決了反應槽不同區域的液體濃度不一致的問題;又由於本發明每個工作液腔室的區域更小,便於較快的溢流迴圈,大大降低了反應槽不同區域內溫度的差異性。The invention provides a plurality of pairs of separators separating the chambers of the reaction tank in the reaction tank body, so that a plurality of working fluid chambers are formed in the reaction tank. When the liquid level in the tank reaches a certain height, the liquid flows from the upper part of the partition into the buffer chamber of the overflow loop between the pair of partitions, and then passes through the pipeline below the reaction tank to enter the liquid circulation system outside the reaction tank. Enter the reaction tank after heat exchange. The structure can make the liquid medicine in the upper layer of each working fluid chamber synchronously flow away quickly. Compared with the conventional overflow device, the multi-chamber structure of the present invention may disperse the liquid medicine in the tank body at random, thereby solving the reaction. The problem of inconsistent liquid concentration in different regions of the tank; and because the area of each working fluid chamber of the present invention is smaller, it facilitates a faster overflow loop, which greatly reduces the temperature difference in different regions of the reaction tank.
國內寄存資訊【請依寄存機構、日期、號碼順序註記】Domestic registration information [please note according to the registration authority, date, number order]
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國外寄存資訊【請依寄存國家、機構、日期、號碼順序註記】Foreign deposit information [please note according to the country, organization, date, number order]
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1‧‧‧反應槽 1‧‧‧Reaction tank
2‧‧‧滾筒 2‧‧‧Roller
3‧‧‧隔板 3‧‧‧Baffle
4‧‧‧工作液腔室 4‧‧‧Working fluid chamber
5‧‧‧緩衝腔室 5‧‧‧buffer chamber
6‧‧‧管路 6‧‧‧pipe
7‧‧‧周邊 7‧‧‧around
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410051259.9A CN103762280A (en) | 2014-02-14 | 2014-02-14 | Multi-cavity texturing system |
Publications (1)
Publication Number | Publication Date |
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TW201531603A true TW201531603A (en) | 2015-08-16 |
Family
ID=50529487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW103114497A TW201531603A (en) | 2014-02-14 | 2014-04-22 | Multi-cavity texturing system |
Country Status (2)
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CN (1) | CN103762280A (en) |
TW (1) | TW201531603A (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105133039B (en) * | 2015-09-06 | 2017-12-08 | 常州捷佳创精密机械有限公司 | A kind of single polycrystalline etching device |
US20200069522A1 (en) * | 2018-08-31 | 2020-03-05 | Honey Forms LLC | Polymeric container for dosing of solid products containing active ingredients |
CN111850537B (en) * | 2020-07-17 | 2022-08-16 | 肇庆宏旺金属实业有限公司 | Temperature control method applied to whole roll of stainless steel strip for black titanium plating |
CN113584871A (en) * | 2021-07-30 | 2021-11-02 | 苏州贤辉新纺织科技有限公司 | Process method for treating polyester fiber blanket oil-proof by fluorine gas low-temperature plasma |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20110060084A (en) * | 2009-11-30 | 2011-06-08 | 현대중공업 주식회사 | Apparatus for wet etching |
CN201584428U (en) * | 2009-12-08 | 2010-09-15 | 常州捷佳创精密机械有限公司 | Grouped texturing device |
JP2012129266A (en) * | 2010-12-14 | 2012-07-05 | Sharp Corp | Etching apparatus and water washing method of semiconductor substrate |
CN202308001U (en) * | 2011-10-18 | 2012-07-04 | 常州捷佳创精密机械有限公司 | Reaction tank provided with multiple chambers |
CN102800581A (en) * | 2012-08-28 | 2012-11-28 | 常州捷佳创精密机械有限公司 | Equipment and method for softly etching and cleaning solar cell slice |
CN203386787U (en) * | 2013-07-26 | 2014-01-08 | 泰州德通电气有限公司 | Solar cell wet method oxidation equipment |
CN103441070B (en) * | 2013-08-22 | 2015-12-09 | 常州捷佳创精密机械有限公司 | A kind of etching device of crystal silicon chip and process for etching method |
CN203746887U (en) * | 2014-02-14 | 2014-07-30 | 常州捷佳创精密机械有限公司 | Multi-cavity texturing system |
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2014
- 2014-02-14 CN CN201410051259.9A patent/CN103762280A/en active Pending
- 2014-04-22 TW TW103114497A patent/TW201531603A/en unknown
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CN103762280A (en) | 2014-04-30 |
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