CN101824607A - Gas inlet device for CVD reactor - Google Patents
Gas inlet device for CVD reactor Download PDFInfo
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- CN101824607A CN101824607A CN201010168749A CN201010168749A CN101824607A CN 101824607 A CN101824607 A CN 101824607A CN 201010168749 A CN201010168749 A CN 201010168749A CN 201010168749 A CN201010168749 A CN 201010168749A CN 101824607 A CN101824607 A CN 101824607A
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Abstract
The invention discloses a gas inlet device for a CVD reactor, comprising a gas distribution pipe which is closed in the radial direction, and more than one circuit of integral through gas inlet pipes; the gas distribution pipe is provided with a plurality of gas jet holes towards the center of an enclosed spatial plane; and the opening angles of all the jet holes deviate towards a substrate relative to the centripetal angle. The gas flowing rate which reaches the substrate is constant by adjusting the distribution density and the aperture of the gas jet holes and the pipe diameter distribution of the gas distribution pipe, and a uniform boundary layer is formed on the surface of a sample so as to ensure the uniformity and the consistency of film growing.
Description
Technical field
The present invention relates to a kind of chemical vapor depsotition equipment, relate in particular to a kind of diffuser that is used for CVD (Chemical Vapor Deposition) reactor.
Background technology
Chemical vapor deposition (Chemical Vapor Deposition, be called for short CVD) be the method for a kind of thin-film deposition of growing up mid-term in last century, be after mixing by gas chemical reaction to take place under certain conditions, and in the technology of substrate surface deposit thin film.In being widely used in fields such as microelectronics, photoelectron and hard plated film now.
With chemical gas-phase deposition method deposition film material, need various starting material usually and be written into gas, starting material comprise the material composition that participates in chemical reaction and form the film product; Carrier gas comprises the various raw-material gases that carry, and as hydrogen, nitrogen etc., these carrier gas only are written into starting material and enter reaction chamber, and itself does not participate in chemical reaction.
The CVD thin film deposition process all comprises following steps: (1) carrier gas is being carried reactant and is being flowed to reactor outlet from Reactor inlet, and this main air stream flows and is subjected to the strong influence that the temperature difference, runner expansion, substrate rotation etc. cause; (2) main air stream forms three kinds of frictional belt that are parallel to substrate above substrate; The internal reaction thing is heated in the frictional belt, decomposes, gas-phase chemical reaction such as displacement the formation reaction intermediate product; (3) reactant or reaction intermediates penetrate the frictional belt and arrive substrate surface by convection current and concentration diffusion; (4) reactant adsorbs at substrate surface, again by surface diffusion, be incorporated into surface reaction steps such as lattice and finish thin-film deposition; (5) reactant and byproduct of reaction are at surface desorption; (6) byproduct of reaction after the desorb by convection current and concentration diffusion, is got back to main air stream again, finally is brought to outside the reaction chamber.In the CVD reaction process, surface chemical reaction speed transports speed much larger than reactant usually, so growth for Thin Film speed depends on that the reactant of molecular weight maximum is transported to the speed on surface; On the other hand, the reactant concn that the component of film growth and thickness depend primarily on the substrate top distributes and temperature distribution, promptly the no matter speed or the quality of film growth are influenced by the gas transport process all consumingly, therefore claim to be grown to the reaction of transport process control.
One of important indicator of film preparation is exactly the homogeneity of its thickness, doping content and component.Grow the uniform thin-film material of thickness, doping content and component, according to the reaction mechanism of CVD technology as can be known: must make the reactant concn that reaches substrate and the speed uniformity of trying one's best.This just requires to have equally distributed airflow field, temperature field and concentration field near the substrate surface.Requirement such as even according to the needed component of above-mentioned CVD growing film, that thickness is even, must above substrate, provide a thin thickness and uniform reactant concn frictional belt, make the reaction particle of q.s arrive the substrate surface each point continuously by diffusion.Because when in process of growth, only being transported to the reaction particle at each position of substrate and doping particle speed and all equating, could satisfy the requirement of component, concentration and the thickness evenness of film.The reactant concn frictional belt is influenced by the gas mobile consumingly, so the substrate top also needs to keep a thin thickness and the even velocity frictional belt.The flow field of velocity boundary layer should remain even parallel laminar flow, avoids any fluctuation, turbulent flow and convection current vortex.
For guaranteeing stable boundary layer thickness, people have designed different CVD reactors.The air-flow of forming according to the reactant gases that enters reactor and carrier gas can be divided into two big classes to the CVD reactor with respect to the flow direction of substrate: main air stream is parallel to the horizontal reactor of substrate direction and the main air stream rectilinear reactor perpendicular to the substrate direction.
In horizontal reactor, to opposite side, this structure of reactor is simple from substrate one effluent for reactant gases, and there are problems such as serious reactant depletion and thermal convection vortex in Jie, cause the front and back ununiformity of film thickness easily, need be overcome with the method for complexity.In rectilinear reactor, gas enters from the top of substrate and rolls over to turn 90 degrees and cross substrate, then from the reactor side or the bottom discharge.When the substrate high speed rotating, the fluidic viscous force produces a kind of pump efficiency and answers, because the effect of viscosity, one deck gas of close substrate surface rotates together in company with rotating disk, and under action of centrifugal force, gas is constantly radially thrown to the outer rim of substrate.Meanwhile, the gas of substrate top injects substrate surface vertically to replenish the gas that loses.This pump efficiency should be able to be offset the vortex of thermal convection generation, obtains substrate top boundary layer thickness uniformly, supplies with thereby make substrate top each point obtain uniform particle concentration.The vertical shower type reactor is the improved form of rectilinear reactor, and reactant gases directly sprays to substrate by the little jet pipe of the many solid matters in pallet top, thereby makes the reacting gas concentration that arrives substrate top each point basic identical.Reactant gases diffuses through the frictional belt by concentration again and arrives substrate surface.Utilize energy of rotation to access substrate top boundary layer thickness uniformly, from obtaining the film growth of better quality.Owing to the reactant gases that sprays into directly over substrate all must flow to tray edge, to discharge by the outlet that is arranged in reactor side or bottom again, the reactant gases that sprays in the pallet center is obviously different with the distance of flowing through at the reactant gases at tray edge place.The resultant tail gas of center can not in time be discharged, and causes substrate thickness and doping content radially still to exist inhomogeneous.
Along with the development of scale operation, people press for the load amount that increases the CVD reactor and reduce production costs, and this adapts to this development trend with regard to the capacity that requires the CVD reactor to increase each load.Yet from the characteristics of CVD technology, the load capacity of reactor can not ad infinitum increase.For rectilinear and vertical shower type reactor, have only the diameter that enlarges the load pedestal could satisfy the requirement that the load amount increases, but gas enters reaction chamber from the central position, this has just caused radially distribute inhomogeneous more and more serious, and the design requirements of homogeneous temperature field also increases many behind the increase diameter, thereby cause CVD reactor airflow field and temperature field skewness, be difficult to satisfy the demand of film growth.
Summary of the invention
Airflow field and temperature field skewness at existing CVD reactor, be difficult to satisfy the demand of film growth, purpose of the present invention is intended to propose a kind of diffuser of the CVD of being used for reactor, to solve diffuser unreasonable the causing with respect to the uneven problem of substrate air inlet of design of traditional C VD reactor.
Purpose of the present invention will be achieved through the following technical solutions:
The diffuser that is used for the CVD reactor, it is characterized in that: described diffuser comprises the road inlet pipe that the gas service pipes that is radial closure and one connect, and described gas service pipes is provided with a plurality of gas jetting holes towards its space plane center of wrapping, the radial section area of wherein said gas service pipes equates everywhere, the gas jetting hole of described opening equalization is in the circumferential distribution density of the nearly inlet pipe side circumferential distribution density less than inlet pipe side far away, and described each jet hole offer angle with respect to its entad angle be offset towards substrate.
Further, this is used for the diffuser of CVD reactor, and wherein this gas service pipes is the above polygonized structure in five limits, optionally comprises hexagon, other Polygons more at least, or annular.And each gas jetting hole is an arbitrary shape, and described gas service pipes is provided with flow deflector corresponding to the portion gas jet hole.
Purpose of the present invention can also be achieved through the following technical solutions:
The diffuser that is used for the CVD reactor, it is characterized in that: described diffuser comprises the inlet pipe more than a road that the gas service pipes that is radial closure and one connect, and described gas service pipes is provided with a plurality of gas jetting holes towards its space plane center of wrapping, the circumferential uniform distribution of the gas jetting hole of wherein said opening equalization, the radial section area of described gas service pipes increases towards inlet pipe side far away from nearly inlet pipe side, and described each jet hole offer angle with respect to its entad angle be offset towards substrate.
Further, this is used for the diffuser of CVD reactor, and wherein this gas service pipes is the above polygonized structure in five limits, optionally comprises hexagon, other Polygons more at least, or annular.And each gas jetting hole is an arbitrary shape, and described gas service pipes is provided with flow deflector corresponding to the portion gas jet hole.
For realizing purpose of the present invention, its technical scheme is next can also to be:
The diffuser that is used for the CVD reactor, it is characterized in that: described diffuser is the gas service pipes of radial closure and the above inlet pipe of two-way that one connects, and described gas service pipes is provided with a plurality of gas jetting holes towards its space plane center of wrapping, the radial section area of wherein said gas service pipes equates everywhere, the circumferential distribution density of the gas jetting hole of described opening equalization between nearly inlet pipe side and inlet pipe be less than the circumferential distribution density of inlet pipe side far away, and described each jet hole offer angle with respect to its entad angle be offset towards substrate.
For realizing purpose of the present invention, its technical scheme again or:
The diffuser that is used for the CVD reactor, it is characterized in that: described diffuser is the gas service pipes of radial closure and the inlet pipe more than a road that one connects, and described gas service pipes is provided with a plurality of gas jetting holes to its space plane center of wrapping, the radial section area of circumferential uniform distribution of wherein said gas jetting hole and gas service pipes equates everywhere, described each jet hole in the aperture of nearly inlet pipe side less than the aperture of inlet pipe side far away, and offer angle with respect to its entad angle be offset towards substrate.
Implement technical scheme of the present invention, its advantage is:
The present invention converts the air-flow fluid distribution problem of complexity to the mechanical workout problem, carry out mechanical modification by structure to diffuser, can guarantee to arrive the gas flow rate unanimity of sample surfaces, thereby, guaranteed thickness, component and the doping content homogeneity of growing film in the frictional belt of sample surfaces formation homogeneous.
For the diffuser that makes the CVD of being used for equipment of the present invention is easier to understand the practicality of its substantive distinguishing features and institute's tool thereof, below constipation close accompanying drawing the some specific embodiments of the present invention be described in further detail.But following description and explanation about embodiment do not constitute any limitation protection domain of the present invention.
Description of drawings
Fig. 1 is the structural representation of a preferred embodiment of the present invention;
Fig. 2 is the structural representation of another embodiment of the present invention;
Fig. 3 is the structural representation of further embodiment of this invention;
Fig. 4 is the structural representation of yet another embodiment of the invention;
Fig. 5 a and Fig. 5 b are respectively the enlarged diagram of middle A, B part embodiment illustrated in fig. 4;
Fig. 6 is the view that reactant gases of the present invention sprays.
Embodiment
The present invention is subjected to the difference of the resistance of tube wall when utilizing fluid to flow in pipeline, propose to solve air inlet skewness problem with a kind of metal tubes of particular design.This diffuser is applied in the vertical silicon epitaxy reactor, its structure and mode of operation are summarized: comprise the road inlet pipe 1 that the gas service pipes 2 that is radial closure and one connect, and this gas service pipes 2 circumferentially is distributed with a plurality of gas jetting holes 3 towards its space plane center of wrapping, being distributed as uniformly or arranging of those gas jetting holes 3 by certain way, and opening direction by certain angle facing to the substrate direction.Except that the skew of offering angle, gas service pipes 2 of the present invention is provided with flow deflector 4 corresponding to portion gas jet hole 3.
Reactant gases and carrier gas enter in the gas service pipes 2 by inlet pipe 1; Be ejected into the sample substrate surface by jet hole 3 again, or be injected into sample surfaces along the direction of flow deflector 4 water conservancy diversion.In the device of delivering gas, gas is from spraying from the near more gas jetting hole 3 of inlet pipe 1, and its resistance of ducting that is subjected to is more little, and the amount that ejects gas is also just many more; Otherwise gas is big more from the resistance of ducting that is subjected to when inlet pipe 1 gas jetting hole 3 far away more sprays, and the amount that ejects gas is also just more little.Adjust each other at the quantity that the present invention is directed to the gas service pipes caliber of diffuser, inlet mouth, gas ejection ports distribution density and caliber thereof, guarantee to arrive the gas flow rate unanimity of sample surfaces, thereby, guaranteed the uniformity of film of growth in the frictional belt of sample surfaces formation homogeneous.
Following constipation closes some embodiment of the present invention and accompanying drawing thereof, innovation essence of the present invention is further described, so that technical solution of the present invention is easier to understand, grasp.
Embodiment one
The present invention as shown in Figure 1 is used for the structural representation of the diffuser of CVD reactor.From seeing shown in the figure: this diffuser comprises the road inlet pipe 1 that the gas service pipes 2 that is radial closure and one connect, and this gas service pipes 2 is that the radial section area of wherein this gas service pipes 2 equates the round tube shape structure of (n1=n2) everywhere for radial section, and be provided with a plurality of gas jetting holes 3 towards the space plane center that it is wrapped, and the gas jetting hole 3 of opening equalization is in the circumferential distribution density of the nearly inlet pipe side circumferential distribution density less than inlet pipe side far away, and each gas jetting hole offer angle with respect to its entad angle towards substrate skew (not shown).In addition, this gas service pipes 2 is provided with the adjustable flow deflector of angle excursion 4 corresponding to portion gas jet hole 3, with the adjustment of further reinforcement to spray angle.Add man-hour carrying out CVD, the jeting effect of reactant gases as shown in Figure 6.
Embodiment two
The present invention as shown in Figure 2 is used for the structural representation of another embodiment of diffuser of CVD reactor.From seeing shown in the figure: this diffuser comprises the road inlet pipe 1 that the gas service pipes 2 that is radial closure and one connect, and this gas service pipes 2 is provided with a plurality of gas jetting holes 3 towards its space plane center of wrapping, the gas jetting hole 3 of those opening equalizations is circumferential uniform distribution setting, and each gas jetting hole 3 offer angle with respect to its entad angle towards substrate skew (not shown).Compare to embodiment one, the difference of present embodiment is: wherein the radial section area of this gas service pipes increases (n1＞n2) from nearly inlet pipe side towards inlet pipe side far away.
Embodiment three
The present invention as shown in Figure 3 is used for the structural representation of the another embodiment of diffuser of CVD reactor.From seeing shown in the figure: the basic structure of this diffuser and embodiment one are roughly the same, and different is: the quantity that is provided with of inlet mouth increases to two, and it is actual to can be manyly, increases as required; In addition, present embodiment has also omitted the guide functions of flow deflector 4.Add man-hour, the jeting effect of reactant gases and shown in Figure 6 being close carrying out CVD.
Embodiment four
The diffuser that the present invention shown in Fig. 4, Fig. 5 a and Fig. 5 b is used for the CVD reactor is structural representation and the details enlarged diagram thereof of an embodiment again.From seeing shown in the figure: the basic structure of this diffuser and embodiment one are roughly the same, different is: the aperture of each wherein set gas jetting hole 3 is transition type and changes, promptly each gas jetting hole in the aperture of nearly inlet pipe side less than the aperture of inlet pipe side far away.From Fig. 5 a and Fig. 5 b in proportion, clearly, the gas jetting hole aperture of A part shown in Figure 4 is less than the gas jetting hole aperture of B part shown in Figure 4.Add man-hour, the jeting effect of reactant gases and shown in Figure 6 being close carrying out CVD.
Except that the foregoing description, the present invention has the multifarious characteristics of embodiment.For example: the face shaping of this gas service pipes 2 can be an annular, also can be the above arbitrary polygons in five limits, its cross section can be circular, it also can be square or other shape, its selection can be that stainless steel tube, molybdenum pipe, tungsten pipe or other metal are made, and also can be that other non-metallic material are made; And that distribution consistency degree, the density of this gas ejection ports on gas service pipes is is adjustable, and the jet orifice shape can be circular, also other random geometry.
In vertical silicon epitaxy reactor, use diffuser of the present invention, obtained the view that gas as shown in Figure 6 distributes, sprays.The maldistribution of gas flow rate is less than 0.87%, and it is even to have guaranteed to be ejected into each on-chip reactant gases, has also guaranteed the stability of thin-film material growth.
Claims (8)
1. the diffuser that is used for the CVD reactor, it is characterized in that: described diffuser comprises the road inlet pipe that the gas service pipes that is radial closure and one connect, and described gas service pipes is provided with a plurality of gas jetting holes towards its space plane center of wrapping, the radial section area of wherein said gas service pipes equates everywhere, the gas jetting hole of described opening equalization is in the circumferential distribution density of the nearly inlet pipe side circumferential distribution density less than inlet pipe side far away, and described each jet hole offer angle with respect to its entad angle be offset towards substrate.
2. the diffuser that is used for the CVD reactor according to claim 1 is characterized in that: described gas service pipes is the above Polygons in five limits, comprises hexagon and annular at least.
3. the diffuser that is used for the CVD reactor according to claim 1 is characterized in that: described each gas jetting hole is an arbitrary shape, and described gas service pipes is provided with flow deflector corresponding to the portion gas jet hole.
4. the diffuser that is used for the CVD reactor, it is characterized in that: described diffuser comprises the inlet pipe more than a road that the gas service pipes that is radial closure and one connect, and described gas service pipes is provided with a plurality of gas jetting holes towards its space plane center of wrapping, the circumferential uniform distribution of the gas jetting hole of wherein said opening equalization, the radial section area of described gas service pipes increases towards inlet pipe side far away from nearly inlet pipe side, and described each jet hole offer angle with respect to its entad angle be offset towards substrate.
5. the diffuser that is used for the CVD reactor according to claim 4 is characterized in that: described gas service pipes is the above Polygons in five limits, comprises hexagon and annular at least.
6. the diffuser that is used for the CVD reactor according to claim 4 is characterized in that: described each gas jetting hole is an arbitrary shape, and described gas service pipes is provided with flow deflector corresponding to the portion gas jet hole.
7. the diffuser that is used for the CVD reactor, it is characterized in that: described diffuser comprises the above inlet pipe of two-way that the gas service pipes that is radial closure and one connect, and described gas service pipes is provided with a plurality of gas jetting holes towards its space plane center of wrapping, the radial section area of wherein said gas service pipes equates everywhere, the circumferential distribution density of the gas jetting hole of described opening equalization between nearly inlet pipe side and inlet pipe be less than the circumferential distribution density of inlet pipe side far away, and described each jet hole offer angle with respect to its entad angle be offset towards substrate.
8. the diffuser that is used for the CVD reactor, it is characterized in that: described diffuser comprises the inlet pipe more than a road that the gas service pipes that is radial closure and one connect, and described gas service pipes is provided with a plurality of gas jetting holes to its space plane center of wrapping, the radial section area of circumferential uniform distribution of wherein said gas jetting hole and gas service pipes equates everywhere, described each jet hole in the aperture of nearly inlet pipe side less than the aperture of inlet pipe side far away, and offer angle with respect to its entad angle be offset towards substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010168749A CN101824607A (en) | 2010-05-12 | 2010-05-12 | Gas inlet device for CVD reactor |
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| CN201010168749A CN101824607A (en) | 2010-05-12 | 2010-05-12 | Gas inlet device for CVD reactor |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101956182A (en) * | 2010-09-29 | 2011-01-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas wall structure for chemical vapor deposition equipment |
| CN102534563A (en) * | 2011-06-16 | 2012-07-04 | 中国电子科技集团公司第四十八研究所 | Inclined entering gas spray header applied to metal organic chemical vapor deposition reactor |
| CN103194737A (en) * | 2012-01-05 | 2013-07-10 | 中国科学院微电子研究所 | Gas distributor used in atomic layer deposition device |
| CN103194736A (en) * | 2012-01-05 | 2013-07-10 | 中国科学院微电子研究所 | Gas distributor and atomic layer deposition device |
| CN106379887A (en) * | 2016-08-31 | 2017-02-08 | 无锡东恒新能源科技有限公司 | Carbon nanotube continuous generating device |
| CN106835267A (en) * | 2016-12-02 | 2017-06-13 | 东莞市中镓半导体科技有限公司 | A kind of hydride gas-phase epitaxy reative cell rotational flow device |
| CN108419355A (en) * | 2018-03-21 | 2018-08-17 | 台州学院 | A kind of device and method of the generation without sheaths plasma |
| CN115110064A (en) * | 2022-07-15 | 2022-09-27 | 长鑫存储技术有限公司 | Gas input equipment and gas input method |
| CN115537778A (en) * | 2022-09-26 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | Air inlet device for wafer processing equipment and wafer processing equipment |
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2010
- 2010-05-12 CN CN201010168749A patent/CN101824607A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101956182A (en) * | 2010-09-29 | 2011-01-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas wall structure for chemical vapor deposition equipment |
| CN101956182B (en) * | 2010-09-29 | 2013-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas wall structure for chemical vapor deposition equipment |
| CN102534563A (en) * | 2011-06-16 | 2012-07-04 | 中国电子科技集团公司第四十八研究所 | Inclined entering gas spray header applied to metal organic chemical vapor deposition reactor |
| CN103194737B (en) * | 2012-01-05 | 2015-06-10 | 中国科学院微电子研究所 | Gas distributor used in atomic layer deposition device |
| CN103194736A (en) * | 2012-01-05 | 2013-07-10 | 中国科学院微电子研究所 | Gas distributor and atomic layer deposition device |
| CN103194736B (en) * | 2012-01-05 | 2015-05-20 | 中国科学院微电子研究所 | Gas distributor and atomic layer deposition device |
| CN103194737A (en) * | 2012-01-05 | 2013-07-10 | 中国科学院微电子研究所 | Gas distributor used in atomic layer deposition device |
| CN106379887A (en) * | 2016-08-31 | 2017-02-08 | 无锡东恒新能源科技有限公司 | Carbon nanotube continuous generating device |
| CN106835267A (en) * | 2016-12-02 | 2017-06-13 | 东莞市中镓半导体科技有限公司 | A kind of hydride gas-phase epitaxy reative cell rotational flow device |
| CN108419355A (en) * | 2018-03-21 | 2018-08-17 | 台州学院 | A kind of device and method of the generation without sheaths plasma |
| CN108419355B (en) * | 2018-03-21 | 2022-02-18 | 台州学院 | Equipment and method for generating sheath-free plasma |
| CN115110064A (en) * | 2022-07-15 | 2022-09-27 | 长鑫存储技术有限公司 | Gas input equipment and gas input method |
| CN115537778A (en) * | 2022-09-26 | 2022-12-30 | 盛吉盛(宁波)半导体科技有限公司 | Air inlet device for wafer processing equipment and wafer processing equipment |
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Application publication date: 20100908 |