CN201826012U - Gas distributor for uniformly discharging gas - Google Patents
Gas distributor for uniformly discharging gas Download PDFInfo
- Publication number
- CN201826012U CN201826012U CN2010205475023U CN201020547502U CN201826012U CN 201826012 U CN201826012 U CN 201826012U CN 2010205475023 U CN2010205475023 U CN 2010205475023U CN 201020547502 U CN201020547502 U CN 201020547502U CN 201826012 U CN201826012 U CN 201826012U
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- gas
- gas distributor
- air
- giving vent
- gas distribution
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Abstract
The utility model relates to a gas distributor for uniformly discharging gas, which is normally arranged on the intake section of a chemical vapor deposition apparatus and used for providing uniform gas for a reaction chamber. The gas distributor comprises at least one intake tube and more than two closed gas distribution chambers, which are communicated with one another and sequentially and firmly connected along the moving direction of gas flow, each two neighboring gas distribution chambers are partitioned from each other by a connecting wall, and moreover, more than one gas distribution hole is distributed on the surface of each connecting wall. By adjusting the height or length of each gas distribution chamber and the arrangement positions and aperture of the gas distribution holes on the surface of each connecting wall, the utility model can ensure that the final flow velocity of discharged gas is uniform. The structure of the gas distributor is simple, the gas distributor is easy to machine and convenient to assemble and maintain, the cost is low, and the gas distributor can provide the uniform gas for the reaction chamber, thus ensuring the uniformity and consistency of the gas entering the chemical vapor deposition apparatus, which is favorable for the uniform growth of a film.
Description
Technical field
The present invention relates to a kind of gas distributing device that is applied to the air inlet section of chemical vapor deposition device, particularly a kind of gas distributor that is used for evenly giving vent to anger.
Background technology
With chemical vapor deposition (being called for short CVD) method deposition film material, need various starting material usually and be written into gas, starting material comprise the material composition (also being gas form usually) that participates in chemical reaction and form the film product; Carrier gas comprises the various raw-material gases that carry, and as hydrogen, nitrogen etc., these carrier gas only are written into starting material and enter reaction chamber, and itself does not participate in chemical reaction.
One of important indicator of film preparation is exactly the homogeneity of its thickness, doping content and component.Grow the uniform thin-film material of thickness, doping content and component, reaction mechanism according to the CVD technology can be known: must provide a thin thickness and uniform reactant concn frictional belt above substrate, make the reaction particle of q.s arrive the substrate surface each point continuously by diffusion.Because when in process of growth, only being transported to the reaction particle at each position of substrate and doping particle speed and all equating, could satisfy the requirement of component, concentration and the thickness evenness of film.The reactant concn frictional belt is influenced by the gas mobile consumingly, therefore concentration boundary layer uniformly if will obtain thin thickness, and precondition is exactly that a thin thickness will be kept and the even velocity frictional belt in the substrate top.This just is strict with the necessary uniformity of speed of the reactant that arrives the substrate top, and the flow field of velocity boundary layer should remain even parallel laminar flow, avoids any fluctuation, turbulent flow and convection current vortex.
For guaranteeing the boundary layer thickness of aforementioned stable, people have designed different CVD reactors.The air-flow of forming according to the reactant gases that enters reactor and carrier gas can be divided into two big classes to the CVD reactor with respect to the flow direction of substrate: main air stream is parallel to the horizontal reactor of substrate direction and the main air stream rectilinear reactor perpendicular to the substrate direction.
In horizontal reactor, to opposite side, this structure of reactor is simple from substrate one effluent for reactant gases, but has problems such as serious reactant depletion and thermal convection vortex, cause the front and back ununiformity of film thickness easily, need be overcome with the method for complexity.
In rectilinear reactor, gas enters from the top of substrate and rolls over to turn 90 degrees and cross substrate, then from the reactor side or the bottom discharge.When the substrate high speed rotating, the fluidic viscous force produces a kind of pump efficiency and answers, because the effect of viscosity, one deck gas of close substrate surface rotates together in company with rotating disk, and under action of centrifugal force, gas is constantly radially thrown to the outer rim of substrate.Meanwhile, the gas of substrate top injects substrate surface vertically to replenish the gas that loses.This pump efficiency should be able to be offset the vortex of thermal convection generation, obtains substrate top boundary layer thickness uniformly, supplies with thereby make substrate top each point obtain uniform reactant concn.The improved form of rectilinear reactor is the vertical shower type reactor, and reactant gases directly sprays to substrate by the little jet pipe of the many solid matters in pallet top, thereby makes the reacting gas concentration that arrives substrate top each point basic identical.Reactant gases diffuses through the frictional belt by concentration again and arrives substrate surface.Utilize energy of rotation to access substrate top boundary layer thickness uniformly, from obtaining the film growth of better quality.Owing to the reactant gases that sprays into directly over substrate all must flow to tray edge, to discharge by the outlet that is arranged in reactor side or bottom again, the reactant gases that sprays in the pallet center is obviously different with the distance of flowing through at the reactant gases at tray edge place.The resultant tail gas of center can not in time be discharged, and causes substrate thickness and doping content radially still to exist inhomogeneous.
Along with the development of scale operation, people press for the load amount that increases CVD equipment and reduce production costs, and this adapts to this development trend with regard to the capacity that requires the CVD reactor to increase each load.Yet from the characteristics of CVD technology, the load capacity of reactor can not ad infinitum increase.Concerning especially for rectilinear reactor of tradition and the vertical shower type reactor, have only the diameter that enlarges the load pedestal could satisfy the requirement that the load amount increases, but gas enters reaction chamber from the central position, this has just caused radially distribute inhomogeneous more and more serious, and the design requirements of homogeneous temperature field also increases many behind the increase diameter, thereby cause CVD reactor airflow field and temperature field skewness, be difficult to satisfy the demand of film growth.
Summary of the invention
The objective of the invention is to propose a kind of gas distributor that is used for evenly giving vent to anger, it can be the air inlet that reaction chamber provides uniformity, guarantee the homogeneity and the consistence of chemical vapor deposition device air inlet, be beneficial to the even growth of film, thereby overcome deficiency of the prior art.
For achieving the above object, the present invention has adopted following technical scheme:
A kind of gas distributor that is used for evenly giving vent to anger, it is characterized in that: described gas distributor comprises at least one road inlet pipe and two the above closed gas distribution cavity that are interconnected, described inlet pipe and gas distribution chamber are fixedly connected sequentially along the air-flow traffic direction, mat one connecting wall space between adjacent two gas distribution chamber, and the above air distribution hole that distributes on the described connection wall.
Say further:
Be welded to each other fixing by a plurality of solder joints between described adjacent two gas distribution chamber.
The aperture of described air distribution hole is less than the caliber of inlet pipe.
Be distributed with the identical air distribution hole in a plurality of apertures on the same connection wall, and the air distribution hole apertures that are distributed on any two connection walls are different.
Be distributed on the same connection wall a plurality of air distribution holes be distributed in the adjacent a plurality of air distribution holes that the are connected wall state that on the air-flow traffic direction, is interspersed.
Air distribution hole aperture on each connecting wall reduces successively along the air-flow traffic direction.
The length of described each gas distribution chamber reduces successively along the air-flow traffic direction.
Described inlet pipe and gas distribution chamber along continuous straight runs are arranged successively.
Described inlet pipe and gas distribution chamber are vertically arranged successively by order from down to up.
Described gas distribution chamber has annular or Polygons cross section.
Consider many deficiencies of the prior art, this case contriver is through studying for a long period of time and putting into practice, meet the wall homogenizing and hinder different characteristics when utilizing fluid in pipeline, to flow at different inner lumen tubes, convert the fluid distribution problem of complexity to the mechanical workout problem, and obtain gas distributor of the present invention by simple and mechanical method for processing, thereby solved CVD reactor air inlet problem pockety, and then guaranteed the homogeneity of film growth.The principle of work of this gas distributor is as follows:
Reactant gases and carrier gas enter in the first layer gas distribution chamber by inlet pipe, and lead to second layer gas distribution chamber through being distributed in the first some air distribution holes that connect on the wall that are used to separate first and second layer gas distribution chamber; Preferably, the aperture of above-mentioned air distribution hole, suppresses gas and flows out from nearly entry zone to increase the outlet pipe resistance less than the inlet pipe caliber; Further, along the air-flow traffic direction, the length of each layer distribution cavity reduces gradually, that is, the length of the first layer distribution cavity is maximum in each distribution cavity, and it is long-pending to increase cross section of fluid channel, purpose is than the resistance of the flow duct in the small flow channels, makes air-flow extend to entry zone far away from nearly entry zone faster; Through said process, promptly finish homogenizing one time.Second layer gas distribution chamber welds together by some solder joints and the first layer gas distribution chamber, second connect on the wall and also be distributed with some air distribution holes what be used to separate second and third layer gas distribution chamber, preferably, the aperture of these air distribution holes is less than the second air distribution hole aperture that connects on the wall, to increase the outlet pipe resistance once more; Being distributed in first and second air distribution hole that connects on the wall can be oppositely arranged or shift to install along the air-flow traffic direction according to the needs of practical application, but purpose all is to meet the wall diffusional effect by fluidic, makes the air-flow that enters down one deck gas distribution chamber distribute more even; Air distribution hole on follow-up each gas distribution chamber, each connecting wall can be with reference to the said structure setting; So repeatedly, through (the many more uniformity coefficient of the number of plies are high more) after the multi-layer gas distribution cavity, reactant gases in the gas distributor and carrier gas by air distribution hole direct or indirect be transported to the substrate top.Guarantee to arrive the unanimity of the gas flow rate of sample surfaces with this, thereby form the frictional belt of homogeneous, guaranteed the uniformity of film of growth at sample surfaces.
Compared with prior art, beneficial effect of the present invention is: this gas distributor is simple in structure, be easy to processing, being convenient to assembling safeguards, with low cost, and can be the air inlet that reaction chamber provides uniformity, and guarantee the homogeneity and the consistence of chemical vapor deposition device air inlet, be beneficial to the even growth of film.
Description of drawings
Fig. 1 is the structural representation of the gas distributor that is used for evenly giving vent to anger among the embodiment 1;
Fig. 2 is the structural representation of the gas distributor that is used for evenly giving vent to anger among the embodiment 2.
Embodiment
Below in conjunction with drawings and the specific embodiments technical scheme of the present invention is elaborated.
Embodiment 1 this gas distributor of evenly giving vent to anger is mainly used in the reactor of metal organic chemical vapor deposition, its structure as shown in Figure 1, promptly, by one 1/4 standard inlet pipe 1 and three layers of gas distribution chamber, 2,3,4 vertical being welded to form, be provided with some solder joints 5 between the adjacent gas distribution chamber.The inscribed circle radius of above-mentioned each gas distribution chamber is 150mm, and the housing depth of the first～three layer of gas distribution chamber 2,3,4 is respectively 20mm, 15mm, 10mm.The first layer that is arranged between first and second layer gas distribution chamber 2,3 connects 20 air distribution holes 6 of uniform distribution on the wall, and the aperture is 4mm; The second layer that is arranged between second and third layer gas distribution chamber connects 30 air distribution holes 7 of uniform distribution on the wall, aperture 2mm; The 3rd layer connects 50 air distribution holes 8 on the wall, aperture 1mm.On the air-flow traffic direction, the air distribution hole that first, second and third layer connects on the wall is staggered successively.
The gas distributor of mat present embodiment, one inlet air flow is through behind this gas distributor, the ununiformity that measured gas flow rate distributes on whole air inlet anchor ring is less than 0.48%, guarantee to be ejected in the big regional extent high homogeneity of each on-chip reactant gases, satisfied the stability requirement of material growth.
Embodiment 2 as shown in Figure 2, the structure of the gas distributor that present embodiment is evenly given vent to anger is similar to Example 1, but it mainly is welded to form by an inlet pipe 1 and three layers of gas distribution chamber 2,3,4 along continuous straight runs, is provided with some solder joints 5 between the adjacent gas distribution chamber.The bore unanimity of above-mentioned each gas distribution chamber, but the cavity length of the first～three layer of gas distribution chamber 2,3,4 reduces successively.The first layer that is arranged between first and second layer gas distribution chamber 2,3 connects some air distribution holes 6 that distribute on the wall; The second layer that is arranged between second and third layer gas distribution chamber connects some air distribution holes 7 that distribute on the wall; The 3rd layer connects some air distribution holes 8 that distribute on the wall; And the aperture of air distribution hole 6～8 reduces successively.And on the air-flow traffic direction, the air distribution hole 6,7,8 that first, second and third layer connects on the wall is staggered successively.Same, this gas distributor can guarantee to be ejected in the big regional extent high homogeneity of each on-chip reactant gases, satisfies the stability requirement of material growth.
Need to prove that the above-mentioned gas divider can be made by metallic substance (as stainless steel, tungsten etc.) or other non-metallic material; Above-mentioned inlet pipe can be one or more; The shape of above-mentioned gas distribution cavity can be annular, Polygons or other any suitable forms; Above-mentioned air distribution hole can be circle, rectangle or other any suitable shape; At the distributing position with the air distribution hole on one deck connecting wall face can be equally distributed, also can be uneven distribution, and the number density of air distribution hole is adjustable.
Therefore, the foregoing description only is explanation technical conceive of the present invention and characteristics, and its purpose is to allow the personage who is familiar with this technology can understand content of the present invention and enforcement according to this, can not limit protection scope of the present invention with this.All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (10)
1. gas distributor that is used for evenly giving vent to anger, it is characterized in that: described gas distributor comprises at least one road inlet pipe and two the above closed gas distribution cavity that are interconnected, described inlet pipe and gas distribution chamber are fixedly connected sequentially along the air-flow traffic direction, mat one connecting wall space between adjacent two gas distribution chamber, and the above air distribution hole that distributes on the described connection wall.
2. the gas distributor that is used for evenly giving vent to anger according to claim 1 is characterized in that: be welded to each other fixing by a plurality of solder joints between described adjacent two gas distribution chamber.
3. the gas distributor that is used for evenly giving vent to anger according to claim 1 is characterized in that: the aperture of described air distribution hole is less than the caliber of inlet pipe.
4. the gas distributor that is used for evenly giving vent to anger according to claim 1 is characterized in that: be distributed with the identical air distribution hole in a plurality of apertures on the same connection wall, and the air distribution hole apertures that are distributed on any two connection walls are different.
5. the gas distributor that is used for evenly giving vent to anger according to claim 4 is characterized in that: be distributed on the same connection wall a plurality of air distribution holes be distributed in the adjacent a plurality of air distribution holes that the are connected wall state that on the air-flow traffic direction, is interspersed.
6. the gas distributor that is used for evenly giving vent to anger according to claim 4 is characterized in that: the air distribution hole aperture on each connecting wall reduces successively along the air-flow traffic direction.
7. the gas distributor that is used for evenly giving vent to anger according to claim 1 is characterized in that: the length of described each gas distribution chamber reduces successively along the air-flow traffic direction.
8. the gas distributor that is used for evenly giving vent to anger according to claim 1 is characterized in that: described inlet pipe and gas distribution chamber along continuous straight runs are arranged successively.
9. the gas distributor that is used for evenly giving vent to anger according to claim 1 is characterized in that: described inlet pipe and gas distribution chamber are vertically arranged successively by order from down to up.
10. the gas distributor that is used for evenly giving vent to anger according to claim 1 is characterized in that: described gas distribution chamber has annular or Polygons cross section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205475023U CN201826012U (en) | 2010-09-29 | 2010-09-29 | Gas distributor for uniformly discharging gas |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010205475023U CN201826012U (en) | 2010-09-29 | 2010-09-29 | Gas distributor for uniformly discharging gas |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201826012U true CN201826012U (en) | 2011-05-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010205475023U Expired - Fee Related CN201826012U (en) | 2010-09-29 | 2010-09-29 | Gas distributor for uniformly discharging gas |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201826012U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949007A (en) * | 2010-09-29 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas distributor for uniform gas emission |
-
2010
- 2010-09-29 CN CN2010205475023U patent/CN201826012U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949007A (en) * | 2010-09-29 | 2011-01-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas distributor for uniform gas emission |
| CN101949007B (en) * | 2010-09-29 | 2012-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas distributor for uniform gas emission |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 Termination date: 20140929 |
|
| EXPY | Termination of patent right or utility model |