CN101914761A - Device for controlling delivery and uniform distribution of reaction gases in MOCVD reaction chamber - Google Patents
Device for controlling delivery and uniform distribution of reaction gases in MOCVD reaction chamber Download PDFInfo
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- CN101914761A CN101914761A CN 201010258877 CN201010258877A CN101914761A CN 101914761 A CN101914761 A CN 101914761A CN 201010258877 CN201010258877 CN 201010258877 CN 201010258877 A CN201010258877 A CN 201010258877A CN 101914761 A CN101914761 A CN 101914761A
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Abstract
The invention discloses a device for controlling the delivery and the uniform distribution of reaction gas in a MOCVD reaction chamber. By respectively controlling the flow of gas passages non-uniformly distributed radially on a front gas homogenizing plate and input passages at different positions, at least two reaction gases are respectively introduced into two paths which are radially and axially crossed on a spray header, and can be secondarily distributed by nozzles in different shapes, so the uniformly distributed boundary layer concentration, speed and temperature required are achieved on the surface of a rotary epitaxial wafer, the quality of massively produced epitaxial films and the finished product ratio of massively produced epitaxial wafers are improved, the consumption of expensive reaction gases can be effectively controlled and the epitaxial production cost is reduced. By properly increasing the distance between the surface of the spray header and the epitaxial wafer, deposits generated on the surface of the spray header and the nozzles in the epitaxial growth are reduced, the cleaning period is prolonged, and the production efficiency and system capacity are improved. The device also can reduce the processing difficulty and manufacturing cost of the nozzles of the spray header and cooling medium passages.
Description
Technical field
The present invention relates to the device of a kind of MOCVD (metal organic chemical vapor deposition) reaction chamber that is used for production compound semiconductor photoelectric device, particularly a kind of MOCVD reaction chamber that can be applicable to large size, many substrates, reactant gases is carried device with uniform distribution control for reactant gases control.
Background technology
Metal organic chemical vapor deposition system (hereinafter to be referred as MOCVD) is the most crucial equipment that is used to produce semiconductor photoelectric device.In metal organic chemical vapor deposition (MOCVD) process, reactant gases is introduced into reaction chamber from source of the gas, makes epitaxy formation crystalline network film on the epitaxial wafer that is placed in the reaction chamber.
In order effectively to control above-mentioned epitaxially grown high-temperature chemical reaction process, usually need reactant gases on the surface of epitaxial wafer, to form the frictional belt of uniform concentration, uniform acceleration and uniform temperature, to satisfy every requirement of epitaxially grown film on crystalline network and performance.
Below the subject matter of introducing now common a few money MOCVD reaction chambers and existing aspect gas delivery control with wherein being used for the device of the reactant gases conveying and the control that distributes, is called for short " spray header ".
Existing level formula MOCVD reaction chamber, the import of its reactant gases and outlet are separately positioned on the reaction chamber two ends of horizontal pipe formula, horizontal reactor subject matter be reactant along the journey loss, promptly to the other end, concentration is constantly decay on flow direction from epitaxial wafer one end horizontal flow for reactant gases.And thermal convection vortex and wall effect all are unfavorable for the growth of epitaxial film.
As shown in Figure 1, be existing planetary MOCVD reaction chamber, it is the improved form of horizontal, introduces by vertical, as to press close to epitaxial wafer multiple import 110, makes at least two kinds of reactant gasess respectively in radial flow.Also pass through the master tray 120 of revolution, and a plurality of sub-pallet 121 that circumferentially be provided with along it, the difference rotation, average some epitaxial wafers 130 surfaces of placing on each sub-pallet 121, in different radial positions,, thereby can obtain uniform coating effects with the contacting of different concns reactant gases.Yet because the rotation of sub-pallet 121 is to drive by air-flow, and the accurate part of dependence cooperates, need frequently to open reaction chamber in the operational process and clear up settling on the sub-pallet, prevent to be stuck,, therefore be difficult to be fit to the requirement of large scale continuous prod to guarantee the reliability of rotation.
As shown in Figure 2, be existing a kind of rectilinear high-speed rotary MOCVD reaction chamber, two kinds of reactant gasess enter from the different pipeline in reaction chamber top, enter spray header 210 zones separately respectively, vertically spray to epitaxial wafer 230 on enough height respectively.Place pallet 220 high speed rotating of these a plurality of epitaxial wafers 230, when its rotating speed enough high (usually greater than 1000 commentaries on classics/per minutes), reactant gases obtains sufficient kinetic energy, and be transported to the top of epitaxial wafer 230 rapidly, carry out uniform mixing, and obtain concentration, speed and temperature boundary layer uniformly on the surface of epitaxial wafer 230.But, because the centrifugal force that the high speed rotating of pallet 220 produces, many gases that fully do not react and the gas that also participates in reacting are discharged rapidly together, cause expensive reactant gases consumption to increase several fold, thereby in scale operation, greatly increased the production cost of substrate extension.
As shown in Figure 3, be the MOCVD reaction chamber that also has a kind of vertical shower type at present.Two kinds of reactant gasess are entered by inlet mouth 311 separately, and the spray header 310 that is provided with by reaction chamber 300 tops is by liftoff epitaxial wafer 330 tops that are delivered on the pallet 320 of low coverage.These two kinds of reactant gasess are transported to epitaxial wafer 330 tops respectively by separately spout 312 in the spray header 310.Spout 312 cross arrangements of these two kinds of gases, densification is evenly distributed in the whole spray header 310, so that two kinds of gases fully and equably mix above epitaxial wafer 330.
The pallet 320 of the some epitaxial wafers 330 of described horizontal positioned along the central shaft rotation of himself, has not only improved the homogeneity of heating between the epitaxial wafer 330 but also has further improved epitaxial wafer 330 surperficial various reactant gasess and mixed and the homogeneity that distributes.
Yet the spray header 310 of this design is located at the central position, top of spray header 310 to the inlet mouth 311 of reactant gases, makes the upwards flow of each spout 312 of footpath, can change along with the difference of the radius R of its distance center.The uneven situation of this gas distribution is particularly outstanding for the reaction chamber 300 that radius size is big.
So the spray header 310 of this design generally adopts the very little spout of internal diameter 312 (about 0.5mm),, improve the uniform distribution of reactant gases in whole spray header 310 by improving the pressure difference of top between the spout 312.Because the bottom surface of spout 312 and the distance very little (about 10mm) of epitaxial wafer 330, cause the very high and deposition reactant of spray header 310 surface temperatures, the reactant obstruction that spout 312 easily is deposited need frequently be opened reaction chamber 300 and be cleared up.Therefore, the design of this kind spray header is difficult to satisfy the requirement of large scale continuous prod.
From the processing and manufacturing angle, the bore of each jet pipe 312 is very little and will process very complicated through the multiple spot welding.Pass some vertical spouts 312 in this spray header 310, also be horizontally disposed with cooling medium pass 313, the stopping property of cooling medium pass 313 depends on the stopping property of several welds corresponding on each jet pipe, so all very high to the requirement of welding processing, manufacturing cost is higher.
Summary of the invention
The purpose of this invention is to provide a kind of rectilinear MOCVD reaction chamber reactant gases that is used for and carry the device of controlling with uniform distribution, at least two kinds of chemical reaction gas that extension can be reacted required are imported reaction chamber respectively, and control ratio, flow, distribution and the speed of every kind of gas in reaction chamber, make various reactant gasess distribute equably and mix, to obtain high-quality epitaxial film at the epitaxial wafer surface energy.And in the raising scale operation epitaxial growth rate and device good article rate the time, processing is safeguarded simple, can also control the consumption of expensive reactant gases effectively, with the production cost of further reduction substrate extension.
In order to achieve the above object, technical scheme of the present invention provides a kind of MOCVD of being used for reaction chamber reactant gases and carries the device of controlling with uniform distribution, be connected with the reaction chamber lid at reaction chamber top, extension reaction or thin film deposition are carried out in the some epitaxial wafers top mixing that is used at least two kinds of reactant gasess are delivered to respectively on the pallet, it is characterized in that this device comprises:
Preposition uniform gas board, and the spray header that is arranged on preposition uniform gas board below;
Described reaction chamber lid radially is made as several regions, and corresponding each zone is provided with some gas input passage;
Offer some gas passages on the described preposition uniform gas board, at least the first reactant gases of introducing from input channel is carried out the control of flow distribution after, be delivered to described spray header;
Described at least the second reactant gases covers the radially input channel of different zones via described reaction chamber, is delivered to the gas circuit of the different zones of described spray header respectively;
Described spray header is provided with the assignment of traffic that corresponding respectively described first, second reactant gases of some spouts carries out secondary, makes described first, second reactant gases by independent and be delivered to described epitaxial wafer top equably.
The central position of described reaction chamber lid offers some input channels, and peripheral position offers other input channels;
The input channel that is positioned at reaction chamber lid center is delivered to preposition uniform gas board with first reactant gases;
Another input channel that is positioned at reaction chamber lid center is passed described preposition uniform gas board, with being positioned at the peripheral described input channel of reaction chamber lid, respectively second reactant gases is delivered to described spray header; By controlling the gas flow in the described input channel, make center and outer peripheral areas obtain required gas flow distribution at described spray header.
Gas passage on the described preposition uniform gas board is to distribute with certain density rule diametrically to offer, and comes the gas flow distribution on the annular region of different diameter on the preposition uniform gas board is controlled.
The edge protuberance of described preposition uniform gas board, middle recessed, make above this preposition uniform gas board, with the reaction chamber lid between space of formation.
Described spray header and preposition uniform gas board are connected, make above spray header to form a space, and with some spout connections of described conveying first reactant gases; Gaseous tension P1 in the space of described preposition uniform gas board upstream is greater than the gaseous tension P2 in this space in its downstream.
Described some spouts are by mechanical workout, vertically disposed;
The different zones of corresponding described spray header or corresponding reactant gases difference of carrying, described some spouts can be set to different shapes;
And make the corresponding spout of carrying described first, second reactant gases radially and axially evenly spaced apart across being arranged in the described spray header.
Be horizontally arranged with some gas circuits in the described spray header and distribute passages, be communicated with some input channels that described reaction chamber covers respectively up, below with vertically disposed described some spout connections, carry second reactant gases.
Be formed with the space between described spout downstream, spray header and the substrate base;
Corresponding respectively middle and the input channel at edge and gaseous tension P4, the P5 in the distribution passage between the spout are all greater than the gaseous tension P3 in the space in described spout downstream.
Also by mechanical workout and welding, be formed with some cooling medium passs that distribute according to certain rule in the described spray header, control the temperature of spray header panel by heat-eliminating medium wherein.
The bottom surface of described spray header be placed on pallet on some epitaxial wafers surperficial parallel; Described pallet can be along the central shaft rotation of himself.
Compared with prior art, the invention has the advantages that, the present invention proposes a kind of large size that is applicable to, the reactant gases of many substrates MOCVD reaction chamber is carried the device with uniform distribution control, it is at least two kinds of reactant gasess to introducing from some input channels respectively, the concentration of control input, the distribution of flow and speed, and in spray header, carry out secondary distribution respectively, spout by separately intersects mutually and is transported to the top of epitaxial wafer evenly distributedly at last, cooperate epitaxial wafer rotation carrying out thorough mixing, carry out the extension reaction, thereby can control the consumption of expensive reactant gases effectively, reduce the production cost of substrate extension.
Wherein one road reactant gases (as III family gas) is introduced by the central position of reaction chamber lid, makes design easily.Afterwards, the gas passage control by preposition uniform gas board directly upwards distributes and offers with certain density rule after the gas flow distribution on the annular region of change different diameter, exports spray header to.
Another road reactant gases (as V family gas), enter spray header from reaction chamber lid center and peripheral different zones respectively, by controlling the gas flow of input respectively, can obtain to enter the different gas flow distribution of spray header center and peripheral, thereby solved the gas distribution difficulty that the large size spray header causes, spray header gas inside channels designs is simplified.
The present invention can also pass through mechanical workout, forms difform spout as required, controls from speed, direction, the velocity of diffusion of the gas of spray header output, or whether produces local eddy currents etc., with the further control that realizes reactant gases is carried.
The present invention not only makes the pallet rotation of placing epitaxial wafer, improves the homogeneity that heats between the epitaxial wafer, and reactant gases mixes and the homogeneity that distributes on the epitaxial wafer surface.
The present invention also is provided with some cooling medium passs that distribute according to certain rule in spray header, directly control the temperature of spray header panel by heat-eliminating medium wherein, make that the spray header temperature is even, guarantee that reactant gases enters reaction chamber under suitable temperature, inappropriate reactions in advance such as can not decomposing, deposit, condense.
This cooling medium pass is directly to use the method for conventional mechanical workout to form on spray header, and by the conventional enclosed passage that forms that welds, processing is simple, weld seam is reliable again, and the high pressure sealing performance inspection is also easy.The present invention also after the processing of cooling medium pass, carries out the processing of spout again, can effectively improve spray header and make qualification rate, has further reduced manufacturing cost.
Therefore, by above-mentioned structure design, the rectilinear MOCVD reaction chamber reactant gases that is used for of the present invention is carried the device of controlling with uniform distribution, cooperate the epitaxial wafer rotation to wait other structures can obtain required equally distributed frictional belt concentration, speed and the temperature of extension reaction, the quality of the epitaxial film of raising scale operation and the yield rate of epitaxial wafer.This structure allows suitably to increase the distance between spray header surface and the epitaxial wafer, reduce spray header surface and spout and be in the settling that produces in the thin film epitaxial growth process, do not clear up maintenance so do not need frequently to open reaction chamber, can continue to carry out epitaxy, improve production efficiency and system's production capacity.Optimize the work program that spray header is made, reduced difficulty of processing and manufacturing cost.Compare the consumption that the high speed rotating mode has reduced process gas, reduced the epitaxial growth cost.Be suitable for large-scale industrial production.
Description of drawings
Fig. 1 is the structure schematic side view and the schematic top plan view of existing planetary MOCVD reaction chamber;
Fig. 2 is the structural representation of existing high-speed rotary MOCVD reaction chamber;
Fig. 3 is the structural representation of the MOCVD reaction chamber of existing vertical shower type;
Fig. 4 is that reactant gases of the present invention is carried and the device of uniform distribution control and the annexation synoptic diagram of MOCVD reaction chamber;
Fig. 5 is that the present invention is used for the overall structure synoptic diagram that MOCVD reaction chamber reactant gases is carried the device of controlling with uniform distribution;
Fig. 6 is the structure schematic top plan view of preposition uniform gas board among the present invention;
Fig. 7 is the air flow line synoptic diagram of first reactant gases among the present invention;
Fig. 8 is three kinds of flow distribution synoptic diagram that first reactant gases obtains in conjunction with the preposition uniform gas board structure of difference among the present invention;
Fig. 9 is the air flow line synoptic diagram of second reactant gases among the present invention;
Figure 10 to Figure 12 is three kinds of flow distribution synoptic diagram that second reactant gases obtains by flow in the control input channel among the present invention;
Figure 13 is the synoptic diagram of four kinds of common structures of spout among the present invention;
Figure 14 to Figure 16 is three kinds of flow distribution synoptic diagram of second reactant gases that obtains in conjunction with different spout structures among the present invention;
Figure 17 is the structural representation of heat direction of transfer and cooling channel among the present invention;
Figure 18 is respectively applied for spout that first, second reactant gases the introduces structure elevational schematic view of cross-distribution vertically and radially on spray header among the present invention.
Embodiment
Below in conjunction with accompanying drawing, be example with the uniform distribution of introducing and control two kinds of reactant gasess, the specific embodiment of the present invention is described.Wherein, the flow direction of first reactant gases represents that with filled arrows the flow direction of second reactant gases is represented with the dovetail arrow; The arrow of dotted line is in order to the direction of expression heat transmission.
As shown in Figure 4, the MOCVD reaction chamber reactant gases that is used for of the present invention is carried device with uniform distribution control, be connected with the reaction chamber lid 51 at reaction chamber 50 tops, the bottom surface be placed on pallet 53 on some epitaxial wafers 531 surperficial parallel.Described MOCVD reaction chamber also comprises the well heater 54 that is arranged under the pallet 53, and the venting port 55 that is arranged on MOCVD reaction chamber bottom.
Described pallet 53 can be along the central shaft rotation of himself, and the homogeneity and the epitaxial wafer 531 surperficial reactant gasess of going up that improve heating between the epitaxial wafer 531 mix and the homogeneity that distributes.
As Fig. 4, shown in Figure 5, described reactant gases is carried the device with uniform distribution control, comprise and the reaction chamber lid 51 preposition uniform gas boards 10 that are connected, and the spray header 20 that is arranged on preposition uniform gas board 10 belows.
The central position of described reaction chamber lid 51 offers input channel 511 and 521, and its peripheral position offers input channel 522.Wherein, input channel 511 is used for first reactant gases is inputed to spray header 20 via preposition uniform gas board 10; The input channel 521 that is positioned at the center is passed described preposition uniform gas board 10, and the input channel 522 with the periphery is directly inputted into spray header 20 with second reactant gases.
Cooperation is referring to the flow direction of Fig. 4 to structure shown in Figure 6 and first reactant gases shown in Figure 7, and the edge protuberance of the preposition uniform gas board 10 of described circle is middle recessed, make above this preposition uniform gas board 10, with reaction chamber lid 51 between space 41 of formation.Described first reactant gases is introduced into this space 41 after input channel 511, making gaseous tension wherein is P1.
And spray header 20 is connected with preposition uniform gas board 10, makes to form space 42 above spray header 20, and wherein gaseous tension is P2.Make the gaseous tension P1 in preposition uniform gas board 10 upstream spaces 41,, make the first reaction gas physical efficiency smoothly by described preposition uniform gas board 10 greater than the gaseous tension P2 in the described space 42.
At the recessed portion of preposition uniform gas board 10, be distributed and be provided with some gas passages 11, first flow rate of reactive gas of flowing through is distributed, by changing the upwards distribution density of gas passage 11 of footpath, come the radial distribution of pilot-gas particularly.
As in a kind of preferred structure shown in Figure 6, the central position gas passage 11 of preposition uniform gas board 10 distributes sparse; The closer to the edge, gas passage 11 distributes just intensive more, thereby can obtain shown in the distribution 1-1 among Fig. 8 edge height, the low gas flow distribution in center.
Certainly, if make the setting of gas passage 11 on the preposition uniform gas board 10, it is the uniform structure of radial distribution, or the structure that the center is intensive, the edge is sparse, then can obtain first reactant gases respectively by behind the preposition uniform gas board 10, gas flow shown in the distribution 1-2 is even among Fig. 8, or shown in the distribution 1-3, the distribution situation high in the middle of the gas flow, that the edge is low.
As Fig. 4, Fig. 5 and shown in Figure 180, some vertical spouts 21,22 radially and axially intersection are distributed in the whole spray header 20 equably, are respectively applied for the conveying of first, second reactant gases.Particularly, be used for carrying the spout 21 (Figure 18 hollow core is represented) of first reactant gases and be used to carry the spout 22 (the solid expression of Figure 18) of second reactant gases, footpath at spray header 20 upwards intersects once every a circle, on axial same circle, can one or several intersect once at interval, be implemented in the uniform distribution on the spray header 20.
As Fig. 4, shown in Figure 5, wherein, some spouts 21 (among the figure comparatively long) and described spray header 20 are communicated with space 42 between the preposition uniform gas board 10.Suppose that in the space 43 between spray header 20 and the epitaxial wafer 531, gaseous tension is P3.During works better, the gaseous tension P2 of spout 21 upstream spaces 42 greater than the gaseous tension P3 in the space 43 in its downstream, makes the first reaction gas physical efficiency realize secondary distribution via spout 21, and evenly is transported to the surface of epitaxial wafer 531.
Cooperate the flow direction of participating in Fig. 4, structure shown in Figure 5 and second reactant gases shown in Figure 9, be horizontally arranged with some gas distribution channel 23 in the spray header 20, be communicated with the input channel 521,522 of described reaction chamber lid 51 up respectively, below be communicated with vertically disposed some spouts 22 (among the figure comparatively short), be used to carry second reactant gases.
Because second reactant gases,, enter spray header 20 from the center and the peripheral different zones of reaction chamber lid 51 respectively via input channel 521,522; The gaseous tension that forms in the distribution passage 23 between intermediary input channel 521 and spout 22 is P4 accordingly; And be P5 in the input channel 522 at edge and the gaseous tension of the distribution passage 23 between the spout 22.During works better, gaseous tension P4, the P5 of spout 22 upstreams is all greater than the gaseous tension P3 in the space 43 in its downstream.
By controlling the gas flow of input channel 521,522 respectively, can obtain to enter the different gas flow distribution of spray header 20 center and peripherals, among the 2-1 that distributes as shown in figure 10, the center is less than the gas flow at edge; Or among the 2-2 that distributes as shown in figure 11, the gas flow that the center is consistent with the edge; Or among the 2-3 that distributes as shown in figure 12, the center is greater than the gas flow at edge.
Because the shape of spout has determined speed, direction, the velocity of diffusion of gas output on the spray header 20, and whether produce local eddy currents etc., very big for delivering gas to the process influence on epitaxial wafer 531 surfaces, need each size, operating pressure, the gas flow in association reaction chamber 50, the rotation of epitaxial wafer 531 etc., find out best design by simulation and test.As shown in figure 13, be several frequently seen orifice design, specifically can form by mechanical workout according to different design needs.
Pass through spout 21,22 on the spray header 20 respectively for above-mentioned first, second reactant gases, be delivered to epitaxial wafer 531 surfaces, change if cooperate the shape of spout 21,22 further and distribute, can also be on the basis of above-mentioned Fig. 8, Figure 10 to Figure 12, obtain different gas flow distribution, realize the further control that reactant gases is carried.
For example, by being the spout 22 of spray header 20 center and peripheral positions, select different structure designs after, contrast shown in Figure 10ly, can obtain shown in distribution 2-1-1 among Figure 14, the central position is minimum, linear afterwards increasing evenly exported flow distribution greater than the central position again near marginal position; Or shown in distribution 2-1-2 among Figure 15, the central position is minimum, and linear afterwards increasing is near the flow distribution of the linear output of marginal position greater than the central position.Contrast shown in Figure 12ly, can also obtain shown in distribution 2-3-1 among Figure 16, the central position is the highest, and linear afterwards the reduction is near the edge even flow distribution of output again.
Cooperation is referring to Fig. 4, shown in Figure 17, because in the MOCVD process, the heat of well heater 54 via pallet 53 and epitaxial wafer 531, passes on the panel of spray header 20 from bottom to top.
Thereby, some cooling medium passs 30 are set in spray header 20, directly control the temperature of spray header 20 panels by heat-eliminating medium wherein, make spray header 20 temperature evenly and within the specific limits, guarantee that reactant gases enters reaction chamber 50 under suitable temperature, can not decompose deposition, inappropriate reaction in advance such as condense.
Cooling medium pass 30 is directly to use the method for conventional mechanical workout to form on spray header 20, passes through the enclosed passage of welding formation again.Weld seam mostly is linear or great circle arc, can adopt conventional welding process, and processing is simple, weld seam is reliable, and the high pressure sealing performance inspection of welding back is also easy.
When making spray header 20, finish the processing of above-mentioned cooling medium pass 30 earlier, confirm the high pressure seal test passes, and then enter next step manufacturing, as the processing of gas spout.The program of making processing respectively can effectively improve spray header 20 and make qualification rate, has further reduced manufacturing cost.
In sum, the present invention proposes a kind of rectilinear large size that is applicable to, the reactant gases of many substrates MOCVD reaction chamber 50 is carried the device with uniform distribution control, it is at least two kinds of reactant gasess to introducing from some input channels respectively, the concentration of control input, the distribution of flow and speed, and carry out secondary distribution at spray header 20 respectively, separate by spout separately at last, and mix the top that is transported to epitaxial wafer 531 evenly distributedly, carry out the extension reaction, thereby can control the consumption of expensive reactant gases effectively, reduce the production cost of substrate extension.
Wherein one road reactant gases (as III family gas) is introduced by the central position of reaction chamber lid 51, makes design easily.Afterwards, gas passage 11 controls by preposition uniform gas board 10 footpaths upwards distribute and offer with certain density rule after the gas flow distribution on the annular region of change different diameter, export spray header 20 to.
Another road reactant gases (as V family gas), cover 51 centers from reaction chamber respectively and enter spray header 20 with peripheral different zones, by controlling the gas flow of input respectively, can obtain to enter the different gas flow distribution of spray header 20 center and peripherals, thereby solved the gas distribution difficulty that causes after spray header 20 sizes become greatly, make spray header 20 gas inside distribute passage 23 to design and simplified.
The present invention can also pass through mechanical workout, forms difform spout as required, controls from speed, direction, the velocity of diffusion of the gas of spray header 20 outputs, or whether produces local eddy currents etc., with the further control that realizes reactant gases is carried.
The present invention not only makes the pallet 53 of placing epitaxial wafer 531 rotate, and improves the homogeneity of heating between the epitaxial wafer 531, and the homogeneity that reactant gasess are mixed and distribute is gone up on epitaxial wafer 531 surfaces.
The present invention also is provided with some cooling medium passs 30 in spray header 20, directly control the temperature of spray header 20 panels by heat-eliminating medium wherein, make spray header 20 temperature evenly and within the specific limits, guarantee that reactant gases enters reaction chamber 50 under suitable temperature, inappropriate reactions in advance such as can not decomposing, deposit, condense.
This cooling medium pass 30 is directly to use the method for conventional mechanical workout to form on spray header 20, and by the conventional enclosed passage that forms that welds, processing is simple, weld seam is reliable again, and the high pressure sealing performance inspection is also easy.The present invention has also optimized manufacturing process, after the processing of having finished cooling medium pass 30, carries out the processing of spout again, can effectively improve spray header 20 and make qualification rate, has further reduced manufacturing cost.
Therefore, by above-mentioned structure design, the MOCVD reaction chamber reactant gases that is used for of the present invention is carried the device of controlling with uniform distribution, cooperate the epitaxial wafer rotation to wait other structures, can obtain required equally distributed frictional belt concentration, speed and the temperature of extension reaction, the quality of the epitaxial film of raising scale operation and the yield rate of epitaxial wafer.This structure allows suitably to increase the distance between spray header 20 surfaces and the epitaxial wafer 531, reduce spray header 20 surfaces and spout and be in the settling that produces in the thin film epitaxial growth process, do not clear up maintenance so do not need frequently to open reaction chamber 50, can continue to carry out epitaxy, improve production efficiency and system's production capacity.Also simplify the working method that spray header 20 is made simultaneously, further reduced difficulty of processing and cost.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. one kind is used for the device that MOCVD reaction chamber reactant gases is carried and uniform distribution is controlled, place the top of reaction chamber (50), under the reaction chamber lid (51), extension reaction or thin film deposition are carried out in some epitaxial wafers (531) top mixing that is used at least two kinds of reactant gasess are delivered to respectively on the pallet (53), it is characterized in that this device comprises:
Preposition uniform gas board (10), and the spray header (20) that is arranged on preposition uniform gas board (10) below; Described reaction chamber lid (51) is made as several regions, and corresponding each zone is provided with some gas input passage (511,521,522);
Offer some gas passages (11) on the described preposition uniform gas board (10), at least the first reactant gases of introducing from input channel (511) is carried out the control of flow distribution after, be delivered to described spray header (20);
Described at least the second reactant gases covers the input channel (521,522) that (51) go up different zones via described reaction chamber, is delivered to the gas circuit of the different zones of described spray header (20) respectively;
Described spray header (20) is provided with the assignment of traffic that corresponding respectively described first, second reactant gases of some spouts (21,22) carries out secondary, makes described first, second reactant gases by independent and be delivered to described epitaxial wafer (531) top equably.
2. be used for MOCVD reaction chamber reactant gases according to claim 1 and carry the device of controlling with uniform distribution, it is characterized in that, the central position of described reaction chamber lid (51) offers some input channels (511,521), and peripheral position offers other input channels (522);
The input channel (511) that is positioned at reaction chamber lid (51) center is delivered to preposition uniform gas board (10) with first reactant gases;
Another input channel (521) that is positioned at reaction chamber lid (51) center is passed described preposition uniform gas board (10), with being positioned at the peripheral described input channel (522) of reaction chamber lid (51), respectively second reactant gases is delivered to described spray header (20); By controlling the gas flow in the described input channel (521,522), make center and outer peripheral areas obtain required gas flow distribution at described spray header (20).
3. be used for MOCVD reaction chamber reactant gases according to claim 1 and carry the device of controlling with uniform distribution, it is characterized in that, gas passage (11) on the described preposition uniform gas board (10) is to distribute with certain density rule diametrically to offer, and comes preposition uniform gas board (10) gone up that gas flow distribution on the annular region of different diameter controls.
4. be used for MOCVD reaction chamber reactant gases according to claim 1 and carry the device of controlling with uniform distribution, it is characterized in that, the edge protuberance of described preposition uniform gas board (10), middle recessed, make this preposition uniform gas board (10) top, with reaction chamber lid (51) between a formation space (41).
5. as described in claim 4, be used for the device that MOCVD reaction chamber reactant gases is carried and uniform distribution is controlled, it is characterized in that, described spray header (20) is connected with preposition uniform gas board (10), make in spray header (20) top and form a space (42), and be communicated with some spouts (21) of described conveying first reactant gases; Gaseous tension P1 in the space (41) of described preposition uniform gas board (10) upstream is greater than the gaseous tension P2 in this space (42) in its downstream.
6. as described in claim 2, be used for the device that MOCVD reaction chamber reactant gases is carried and uniform distribution is controlled, it is characterized in that described some spouts are by mechanical workout, vertically disposed;
The different zones of corresponding described spray header (20) or corresponding reactant gases difference of carrying, described some spouts can be set to different shapes;
And the corresponding spout (21,22) of described first, second reactant gases of carrying radially and axially evenly is distributed in the described spray header (20) across.
7. as described in claim 6, be used for the device that MOCVD reaction chamber reactant gases is carried and uniform distribution is controlled, it is characterized in that, spout (22) top in the described spray header (20) is formed with the distribution passage (23) of gas circuit, be communicated with some input channels (521,522) that described reaction chamber covers on (51) respectively up, below be communicated with vertically disposed described some spouts (22), carry second reactant gases.
8. as described in claim 7, be used for the device that MOCVD reaction chamber reactant gases is carried and uniform distribution is controlled, it is characterized in that, be formed with space (43) between described spout (22) downstream, spray header (20) and the substrate base (531);
Corresponding respectively middle and the input channel (521,522) at edge and gaseous tension P4, the P5 in the distribution passage (23) between the spout (22) are all greater than the gaseous tension P3 in the space (43) in described spout (22) downstream.
9. be used for MOCVD reaction chamber reactant gases according to claim 1 and carry the device of controlling with uniform distribution, it is characterized in that, in the described spray header (20) also by mechanical workout and welding, be formed with some cooling medium passs (30), control the temperature of spray header (20) panel by heat-eliminating medium wherein.
10. be used for MOCVD reaction chamber reactant gases according to claim 1 and carry device with uniform distribution control, it is characterized in that, the bottom surface of described spray header (20) be placed on pallet (53) on some epitaxial wafers (531) surperficial parallel; Described pallet (53) can be along the central shaft rotation of himself.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1611637A (en) * | 2003-10-31 | 2005-05-04 | 次世设备有限公司 | Chemical vapor deposition unit |
| JP2005129819A (en) * | 2003-10-27 | 2005-05-19 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device |
| CN101423936A (en) * | 2007-10-16 | 2009-05-06 | 应用材料股份有限公司 | Multi-gas spiral channel showerhead |
| JP2010059520A (en) * | 2008-09-05 | 2010-03-18 | Sharp Corp | Vapor deposition apparatus and vapor deposition method |
-
2010
- 2010-08-16 CN CN2010102588772A patent/CN101914761B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005129819A (en) * | 2003-10-27 | 2005-05-19 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device |
| CN1611637A (en) * | 2003-10-31 | 2005-05-04 | 次世设备有限公司 | Chemical vapor deposition unit |
| CN101423936A (en) * | 2007-10-16 | 2009-05-06 | 应用材料股份有限公司 | Multi-gas spiral channel showerhead |
| JP2010059520A (en) * | 2008-09-05 | 2010-03-18 | Sharp Corp | Vapor deposition apparatus and vapor deposition method |
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