CN102220569B - Vertical air flow type MOCVD (Metal Organic Chemical Vapor Deposition) gas transport spray-nozzle device - Google Patents
Vertical air flow type MOCVD (Metal Organic Chemical Vapor Deposition) gas transport spray-nozzle device Download PDFInfo
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- CN102220569B CN102220569B CN2011101880700A CN201110188070A CN102220569B CN 102220569 B CN102220569 B CN 102220569B CN 2011101880700 A CN2011101880700 A CN 2011101880700A CN 201110188070 A CN201110188070 A CN 201110188070A CN 102220569 B CN102220569 B CN 102220569B
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Abstract
The invention discloses a vertical air flow type MOCVD (Metal Organic Chemical Vapor Deposition) gas transport spray-nozzle device comprising a sealed shell, wherein the shell consists of a top plate, a side wall and a bottom plate; the inner part of the sealed shell is divided into a temperature insulation cavity, a gas mixing chamber and a water cooling cavity; and a gas inlet communicates the gas mixing chamber with a reaction chamber below a gas outlet. The vertical air flow type MOCVD gas transport spray-nozzle device is characterized in that the side wall corresponding to the gas mixing chamber is provided with a first gas inlet pipe and a second gas inlet pipe which are in charge of transporting two types of gas into the gas mixing chamber; and both the outer walls of the first gas inlet pipe and the second gas inlet pipe are wound with heating tapes. The temperature insulation cavity is filled with water or oil serving as temperature insulation liquid. The vertical air flow type MOCVD gas transport spray-nozzle device has the advantages of being capable of uniformly mixing the reaction gas in advance, then introducing the reaction gas into the reaction chamber and ensuring the normal transportation of gas. The vertical air flow type MOCVD gas transport spray-nozzle device can avoid pre-reaction between the two different types of gas under the premise of complete gas mixing and can improve the utilization rate of energy and the quality of crystals.
Description
Technical field
The present invention relates to be used for the equipment of semiconductor material growing, especially relate to a kind of vertical gas flow pattern MOCVD gas transport nozzle arrangement.
Background technology
Metal organic chemical vapor deposition equipment (MOCVD) is a visual plant for preparing semiconductor material at present, especially has remarkable advantages at fermentation such as preparation superlattice, SQWs, has been used for scale operation in photoelectronic industry.The used starting material of MOCVD all feed reaction chamber with the form of gas, and these gases are easy at room temperature react mutually, such as: NH during the growth P-type GaN material
3As the N source, trimethyl-gallium (TmGa) is as the Ga source, two luxuriant magnesium (Cp
2Mg) as doped source, though when room temperature NH
3Also can with Cp
2The Mg reaction forms adducts, and these adductss are solid, are adsorbed on easily in the pipeline, make Mg be difficult to be transported to reaction chamber, can't be incorporated among the GaN.Therefore, all reactant gases is separately fed reaction chamber at all type of production MOCVD of usefulness at present.Reaction tubes for vertical stratification; If the outlet of shower nozzle is too near apart from substrate; The gas that then flows at a high speed can't thorough mixing, thereby the homogeneity of utilization rate of raw materials or material growth is impacted, if shower nozzle is too far away apart from substrate; Then pre-reaction is big, causes utilization rate of raw materials low equally.And for horizontal reaction chamber, the distance that gas level flows through is also very long, can produce very big pre-reaction.Therefore; We can say at present nearly all employing the growth gasses MOCVD that separately feeds chamber designs faced all that gas mixes and pre-reaction between competitive relation, this competitive relation also can have a negative impact to the crystal mass of institute's growth material, utilization rate of raw materials etc.Obviously, if with reactant gases before getting into reaction chamber with regard to thorough mixing, and make shower nozzle to the distance of substrate when smaller, then can thorough mixing, again can the better controlled pre-reaction.Yet the front is mentioned, and mixes in advance to produce some solid-state adductss, has influenced normally transporting of gas.Therefore, as long as address this problem, then in advance hybrid nozzle will be unusual ideal designs.
Summary of the invention
The object of the present invention is to provide a kind of vertical gas flow pattern MOCVD gas transport nozzle arrangement that can reactant gases be mixed in advance, feed then reaction chamber, guarantee the normal conveying of gas, it has overcome the competitive relation between existing gas mixing of present nearly all MOCVD and the pre-reaction.
The objective of the invention is to realize like this:
A kind of vertical gas flow pattern MOCVD gas transport nozzle arrangement; Comprise a dead front type shell of forming by top board, sidewall and base plate; The part that the inside of dead front type shell is divided into three independences and seals each other by last la m and following la m; Be respectively incubation cavity, gas mixing chamber and waterway; Air inlet port between following la m and base plate is communicated with the reaction chamber below the air outlet of gas mixing chamber and air inlet port; Air inlet port is responsible for the reactant gases that mixes in the gas mixing chamber is transported in the reaction chamber, on the corresponding side walls of waterway two ends, is separately installed with cooling water inlet pipe and cooling water outlet pipe, and characteristic is: first inlet pipe and second inlet pipe are installed on the gas mixing chamber corresponding side walls; The gas that first inlet pipe and second inlet pipe are responsible for two types is transported to respectively in the gas mixing chamber, all is tied with the heating zone at the outer wall of first inlet pipe and second inlet pipe.
First inlet pipe in opposite directions and second inlet pipe are installed in respectively on the corresponding side walls of gas mixing chamber two ends; Or first inlet pipe in the same way and second inlet pipe are installed in respectively on the corresponding same avris wall of gas mixing chamber; Or, the inlet pipe threeway with first inlet pipe and second inlet pipe is installed on the gas mixing chamber corresponding side walls.
On the corresponding side walls of incubation cavity two ends, be separately installed with insulation liquid liquid-inlet pipe and insulation liquid drain pipe; In incubation cavity, pretend water or oil into insulation liquid; In incubation cavity, pretend water into insulation liquid; Temperature is controlled at 30-90 ℃ of scope, or in incubation cavity, pretends the oil into insulation liquid, and temperature is controlled at 30-150 ℃ of scope.
The air outlet of air inlet port is made as 10-20mm to the distance of substrate.
Two kinds of different types of reactant gasess among the present invention are passed in gas mixing chamber or the inlet pipe threeway through first inlet pipe and second inlet pipe and carry out pre-mixing; Two kinds of reactant gasess just mix before getting into reaction chamber in advance, and the gas that mixes after finishing vertically sprays the entering reaction chamber through air inlet port then.The heating zone can be heated first inlet pipe and second inlet pipe, and temperature is controlled at 30-100 ℃ of scope.Water or oil as insulation liquid are housed in the incubation cavity at gas mixing chamber top, and to the heating of the mixed gas in the gas mixing chamber, temperature is controlled at 30-150 ℃ of scope.Water back and be to make some organic source (like CP with the purpose of moist closet heated air mixing section
2Mg) and NH
3The adducts that forms can have high saturated vapor pressure and be brought into reaction chamber.In addition, the air outlet and the distance between the substrate of air inlet port are controlled at the 10-20mm scope, and its purpose is to reduce the transport time of reactant gases in the high-temperature zone as far as possible, thereby reduce the occurrence probability of pre-reaction.The present invention can make the gas thorough mixing, can reduce pre-reaction to a great extent again, has overcome the competitive relation of gas mixing with pre-reaction.And for organic source and NH
3Between form the problem that adducts influences gas transport, also the way through heated air pipeline and gas mixing chamber has obtained solution well.
The applicant has done following two kinds of experiments: first kind to the heating of gas pipeline and gas mixing chamber, and second kind is heated to 80 ℃ with gas pipeline and gas mixing chamber, growth P-type GaN under all identical condition of all the other conditions then, and carried out the SIMS test.The result shows, gas pipeline and gas mixing chamber do not carried out the sample of heat growth, and the concentration of Mg is less than 1 * 10
17Cm
-3(almost do not mix, CP is described
2Mg almost is not transported to reaction chamber), and gas pipeline and gas mixing chamber are heated to the sample of 80 ℃ of growths, the concentration of Mg has reached 1 * 10
19Cm
-3(suitable) with the result of type of production MOCVD growth.Experiment proof: gas pipeline and gas mixing chamber heating have been solved CP with getting instant result
2The problem that Mg transports.
Therefore; The present invention has can mix reactant gases, feed then reaction chamber in advance, guarantee the normal advantage of carrying of gas; The present invention mixes under the sufficient prerequisite at gas, has avoided the pre-reaction of inter gas, can improve source utilization ratio and crystal mass.
Description of drawings
Fig. 1 is the cross-sectional schematic of embodiment 1;
Fig. 2 is that the A-A of Fig. 1 is to vertical view;
Fig. 3 is that the B-B of Fig. 1 is to vertical view;
Fig. 4 is that B-B among the embodiment 2 is to vertical view;
Fig. 5 is that B-B among the embodiment 3 is to vertical view;
Fig. 6 is the cross-sectional schematic of embodiment 4;
Wherein: 1-first inlet pipe, 2-heating zone, 3-insulation liquid liquid-inlet pipe, 4-sidewall, 5-top board; The 6-incubation cavity, the last la m of 7-, 8-gas mixing chamber, la m under the 9-, 10-air inlet port; 11-insulation liquid drain pipe, 12-second inlet pipe, 13-cooling water outlet pipe, 14-waterway; The 15-base plate, 16-cooling water inlet pipe, 17-dead front type shell, the 18-first inlet pipe gas orifice; Pipe in 19-first air inlet, the 20-second inlet pipe gas orifice, pipe in 21-second air inlet, the threeway of 22-inlet pipe.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the present invention is done further detailed description.
Embodiment 1:
A kind of vertical gas flow pattern MOCVD gas transport nozzle arrangement; Comprise a dead front type shell 17 of forming by top board 5, sidewall 4 and base plate 15; The part that the inside of dead front type shell 17 is divided into three independences and seals each other by last la m 7 and following la m 9; Be respectively incubation cavity 6, gas mixing chamber 8 and waterway 14; At the air inlet port 10 between following la m 9 and the base plate 15 reaction chamber below the air outlet of gas mixing chamber 8 and air inlet port 10 is communicated with; Air inlet port 10 is responsible for the reactant gases that mixes in the gas mixing chamber 8 is transported in the reaction chamber; On gas mixing chamber 8 two ends corresponding side walls 4, be separately installed with the gases that in opposite directions first inlet pipe 1 and second inlet pipe, 12, the first inlet pipe 1 and second inlet pipe 12 be responsible for two types and be transported to respectively in the gas mixing chamber 8, all be tied with heating zone 2 at the outer wall of first inlet pipe 1 and second inlet pipe 12; On waterway 14 two ends corresponding side walls 4, be separately installed with cooling water inlet pipe 16 and cooling water outlet pipe 13, on incubation cavity 6 two ends corresponding side walls 4, be separately installed with insulation liquid liquid-inlet pipe 3 and insulation liquid drain pipe 11.
In incubation cavity 6, pretend the water into insulation liquid, temperature is controlled at 30-90 ℃ of scope.
The air outlet of air inlet port 10 is made as 10-20mm to the distance of substrate.
As shown in Figure 3; One type reactant gases gets into the gas mixing chamber 8 from first inlet pipe 1; The reactant gases of another kind of type gets into the gas mixing chamber 8 from second inlet pipe 12; Two types reactant gases is at gas mixing chamber 8 thorough mixing, and the gas behind the thorough mixing is transported in the reaction chamber through air inlet port 10 then and reacts.Reactant gases is heated in the heating zone 2 that is entangled on first inlet pipe 1 and second inlet pipe 12, and temperature is controlled at 30-100 ℃ of scope, makes reactant gases have certain temperature (such as 30-100 ℃).Water coolant gets into waterway 14 through cooling water inlet pipe 16, takes away the heat that is transmitted to base plate 15 and air inlet port 10 by reaction chamber, flows out from cooling water outlet pipe 13 then.Incubation cavity 6 adopts water as insulation liquid, and insulation water flows into incubation cavity 6 from insulation liquid liquid-inlet pipe 3, and heat is passed to gas mixing chamber 8 reacting by heating gases, and temperature is controlled at 30-90 ℃ of scope, flows out from insulation liquid drain pipe 11 then.
Embodiment 2:
The structure of the structure of embodiment 2 and embodiment 1 is basic identical, and difference is:
As shown in Figure 4; The front end of first inlet pipe 1 be provided with extend in the gas mixing chamber 8 and first air inlet of front end sealing in manage 19; Be provided with at the front end of second inlet pipe 12 and extend in the gas mixing chamber 8, manage 21 in second air inlet of long strip shape and front end sealing; In first air inlet of long strip shape in second air inlet of pipe 19 and long strip shape pipe 21 place relatively, in first air inlet, be processed with several first inlet pipe gas orifices 18 and several second inlet pipe gas orifices 20 that are oppositely arranged respectively on the sidewall of pipe 21 pipe 19 in first air inlet on the sidewall of pipe 19 pipe 21 in second air inlet with in second air inlet.Spray in opposite directions from the reactant gases of the another kind of type of one type reactant gases of the first inlet pipe gas orifice 18 ejection and 20 ejections of the second inlet pipe gas orifice, directly thorough mixing in gas mixing chamber 8.
In incubation cavity 6, pretend the oil into insulation liquid, temperature is controlled at 30-150 ℃ of scope.
Embodiment 3:
The structure of the structure of embodiment 3 and embodiment 1 is basic identical, and difference is:
As shown in Figure 5; Be provided with in first air inlet that extend in the gas mixing chamber 8 at the front end of first inlet pipe 1 and manage 19; Be provided with in second air inlet that extend in the gas mixing chamber 8 at the front end of second inlet pipe 12 and manage 21; Pipe 19 is embedded in together with the interior pipe 21 of the second coil-like air inlet equidistantly mutually in the first coil-like air inlet, in first air inlet, is processed with several first inlet pipe gas orifices 18 and several second inlet pipe gas orifices 20 in the sidewall of pipe 19 and second air inlet on the sidewall of pipe 21 respectively.Spray in opposite directions from the reactant gases of the another kind of type of one type reactant gases of the first inlet pipe gas orifice 18 ejection and 20 ejections of the second inlet pipe gas orifice, directly thorough mixing in gas mixing chamber 8.
In incubation cavity 6, pretend the water into insulation liquid, temperature is controlled at 30-90 ℃ of scope.
Embodiment 4:
As shown in Figure 6; A kind of vertical gas flow pattern MOCVD gas transport nozzle arrangement; Comprise a dead front type shell 17 of forming by top board 5, sidewall 4 and base plate 15; The part that the inside of dead front type shell 17 is divided into three independences and seals each other by last la m 7 and following la m 9; Be respectively incubation cavity 6, gas mixing chamber 8 and waterway 14, at the air inlet port 10 between following la m 9 and the base plate 15 reaction chamber below the air outlet of gas mixing chamber 8 and air inlet port 10 be communicated with, air inlet port 10 is responsible for the reactant gases that mixes in the gas mixing chamber 8 is transported in the reaction chamber; On the same avris wall 4 of gas mixing chamber 8 correspondences, inlet pipe threeway 22 is installed; Be transported to respectively in the gas mixing chamber 8 being provided with the gases that first inlet pipe 1 and second inlet pipe, 12, the first inlet pipe 1 and second inlet pipe 12 be responsible for two types in the inlet pipe threeway 22, be tied with heating zone 2 at the outer wall of inlet pipe threeway 22; On waterway 14 two ends corresponding side walls 4, be separately installed with cooling water inlet pipe 16 and cooling water outlet pipe 13, on incubation cavity 6 two ends corresponding side walls 4, be separately installed with insulation liquid liquid-inlet pipe 3 and insulation liquid drain pipe 11.
In incubation cavity 6, pretend the water into insulation liquid, temperature is controlled at 30-90 ℃ of scope.
The air outlet of air inlet port 10 is made as 10-20mm to the distance of substrate.
As shown in Figure 6; One type reactant gases gets into the inlet pipe threeway 22 from first inlet pipe 1; The reactant gases of another kind of type gets into the inlet pipe threeway 22 from second inlet pipe 12; Two types reactant gases just mixed in inlet pipe threeway 22 before getting into gas mixing chamber 8, and the gas behind the thorough mixing gets in the gas mixing chamber 8, is transported in the reaction chamber through air inlet port 10 then and reacts.Reactant gases is heated in the heating zone 2 that is entangled on first inlet pipe 1 and second inlet pipe 12, makes reactant gases have certain temperature (such as 30-100 ℃).Water coolant gets into waterway 14 through cooling water inlet pipe 16, takes away the heat that is transmitted to base plate 15 and air inlet port 10 by reaction chamber, flows out from cooling water outlet pipe 13 then.
Claims (7)
1. vertical gas flow pattern MOCVD gas transport nozzle arrangement; Comprise a dead front type shell of forming by top board, sidewall and base plate; The part that the inside of dead front type shell is divided into three independences and seals each other by last la m and following la m; Be respectively incubation cavity, gas mixing chamber and waterway; Air inlet port between following la m and base plate is communicated with the reaction chamber below the air outlet of gas mixing chamber and air inlet port; Air inlet port is responsible for the reactant gases that mixes in the gas mixing chamber is transported in the reaction chamber, on the corresponding side walls of waterway two ends, is separately installed with cooling water inlet pipe and cooling water outlet pipe, it is characterized in that: first inlet pipe and second inlet pipe are installed on the gas mixing chamber corresponding side walls; The gas that first inlet pipe and second inlet pipe are responsible for two types is transported to respectively in the gas mixing chamber, all is tied with the heating zone at the outer wall of first inlet pipe and second inlet pipe.
2. vertical gas flow pattern MOCVD gas transport nozzle arrangement according to claim 1, it is characterized in that: first inlet pipe in opposite directions and second inlet pipe are installed in respectively on the corresponding side walls of gas mixing chamber two ends.
3. vertical gas flow pattern MOCVD gas transport nozzle arrangement according to claim 1 is characterized in that: first inlet pipe in the same way and second inlet pipe are installed in respectively on the corresponding same avris wall of gas mixing chamber.
4. vertical gas flow pattern MOCVD gas transport nozzle arrangement according to claim 1 is characterized in that: the inlet pipe threeway with first inlet pipe and second inlet pipe is installed on the gas mixing chamber corresponding side walls.
5. according to claim 2 or 3 or 4 described vertical gas flow pattern MOCVD gas transport nozzle arrangements; It is characterized in that: on the corresponding side walls of incubation cavity two ends, be separately installed with insulation liquid liquid-inlet pipe and insulation liquid drain pipe; In incubation cavity, pretend water into insulation liquid; The temperature of the reactant gases in the heated air mixing section is controlled at 30-90 ℃ of scope, or in incubation cavity, pretends the oil into insulation liquid, and the temperature of the reactant gases in the heated air mixing section is controlled at 30-150 ℃ of scope.
6. vertical gas flow pattern MOCVD gas transport nozzle arrangement according to claim 5, it is characterized in that: the air outlet of air inlet port is made as 10-20mm to the distance of substrate.
7. vertical gas flow pattern MOCVD gas transport nozzle arrangement according to claim 1, it is characterized in that: reactant gases is heated in the heating zone that is entangled on first inlet pipe and second inlet pipe, and temperature is controlled at 30-100 ℃ of scope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101880700A CN102220569B (en) | 2011-07-06 | 2011-07-06 | Vertical air flow type MOCVD (Metal Organic Chemical Vapor Deposition) gas transport spray-nozzle device |
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|---|---|---|---|
| CN2011101880700A CN102220569B (en) | 2011-07-06 | 2011-07-06 | Vertical air flow type MOCVD (Metal Organic Chemical Vapor Deposition) gas transport spray-nozzle device |
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| CN102220569B true CN102220569B (en) | 2012-07-04 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102492937A (en) * | 2011-12-29 | 2012-06-13 | 中国科学院半导体研究所 | Inlet spray head used for reaction chamber of metal chemical vapor deposition equipment |
| CN103205733A (en) * | 2013-04-27 | 2013-07-17 | 南昌黄绿照明有限公司 | Vertical airflow type MOCVD (Metal-organic Chemical Vapor Deposition) spray head device with multiple gas mixing chambers |
| CN103320852A (en) * | 2013-06-14 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Reaction cavity used for epitaxial deposition |
| CN104561938B (en) * | 2015-01-09 | 2017-04-19 | 浙江大学 | Online normal-pressure chemical vapor deposition film-plating reactor through floatation process |
| CN106467962A (en) * | 2015-08-14 | 2017-03-01 | 英属开曼群岛商精曜有限公司 | Gas distribution grid |
| CN111455352A (en) * | 2020-05-15 | 2020-07-28 | 深圳市纳设智能装备有限公司 | Heatable honeycomb formula multichannel inlet structure |
| CN113235070A (en) * | 2021-05-27 | 2021-08-10 | 聚灿光电科技（宿迁）有限公司 | CVD pipeline and have its CVD device |
| CN114086155B (en) * | 2022-01-18 | 2022-04-15 | 北京中科重仪半导体科技有限公司 | Gas nozzle |
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