CN115341194B - Growth method for improving luminous consistency of miniature light-emitting diode - Google Patents
Growth method for improving luminous consistency of miniature light-emitting diode Download PDFInfo
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- CN115341194B CN115341194B CN202210792545.5A CN202210792545A CN115341194B CN 115341194 B CN115341194 B CN 115341194B CN 202210792545 A CN202210792545 A CN 202210792545A CN 115341194 B CN115341194 B CN 115341194B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 47
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 43
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000007789 gas Substances 0.000 description 36
- 230000000903 blocking effect Effects 0.000 description 18
- 238000009826 distribution Methods 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 13
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- UOSXPFXWANTMIZ-UHFFFAOYSA-N cyclopenta-1,3-diene;magnesium Chemical compound [Mg].C1C=CC=C1.C1C=CC=C1 UOSXPFXWANTMIZ-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Abstract
The present disclosure provides a growth method for improving light emission consistency of a micro light emitting diode, and belongs to the technical field of photoelectron manufacturing. The growth method comprises the following steps: providing a substrate; forming a buffer layer on the substrate; forming a three-dimensional island formation layer on the buffer layer, and controlling the flow rate of the alkyl gas which is introduced into the reaction cavity to be not lower than 250ml/min and not higher than 600ml/min when the three-dimensional island formation layer is formed; and sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on the three-dimensional island formation layer. When the three-dimensional island formation layer grows, the alkyl gas is introduced at a flow rate of not less than 250ml/min and not more than 600ml/min, the MO concentration in the central area of the reaction cavity can be improved under the pushing of the alkyl gas, most of MO sources are prevented from being concentrated at the edge of the reaction cavity, the MO sources are distributed more uniformly in the reaction cavity, and the light emitting consistency of the miniature light emitting diode is improved.
Description
Technical Field
The present disclosure relates to the field of optoelectronic manufacturing technology, and in particular, to a growth method for improving light emission uniformity of a micro light emitting diode.
Background
The Micro light emitting diode (English: micro Light Emitting Diode, abbreviated as Micro LED) is used as a new product with great influence in the photoelectron industry, has the characteristics of small volume, long service life, rich and colorful colors, low energy consumption and the like, and is widely applied to display equipment.
In a display device, in order to have a good display effect, a micro light emitting diode is required to have a good light emitting uniformity.
Disclosure of Invention
The embodiment of the disclosure provides a growth method for improving the light emitting consistency of a micro light emitting diode, which can improve the light emitting consistency of the micro light emitting diode. The technical scheme is as follows:
the embodiment of the disclosure provides a growth method for improving the light emitting consistency of a miniature light emitting diode, which comprises the following steps:
providing a substrate;
forming a buffer layer on the substrate;
forming a three-dimensional island formation layer on the buffer layer, and controlling the flow rate of the alkyl gas which is introduced into the reaction cavity to be not lower than 250ml/min and not higher than 600ml/min when the three-dimensional island formation layer is formed;
and sequentially forming a first semiconductor layer, an active layer and a second semiconductor layer on the three-dimensional island formation layer.
Optionally, the growth process of the three-dimensional island-forming layer includes a non-growth section and a growth section subsequent to the non-growth section;
in the non-growth section, the flow rate of the Ga source is 0, and the flow rate of the alkyl gas is not lower than 300ml/min and not higher than 600ml/min;
in the growth section, the flow rate of the Ga source is more than 0, and the flow rate of the alkyl gas is not less than 250ml/min and not more than 500ml/min.
Optionally, the flow rate of the alkyl gas in the non-growth section is higher than the flow rate of the alkyl gas in the growth section.
Optionally, the flow rate of the alkyl gas of the non-growth section is 350 ml/min-550 ml/min.
Optionally, the flow rate of the alkyl gas in the growth section is 300 ml/min-450 ml/min.
Optionally, the duration of the non-growing segment is 3min to 10min.
Optionally, the growth pressure of the three-dimensional island formation layer is 200-600 torr.
Optionally, the growth temperature of the three-dimensional island formation layer is 1000-1050 ℃.
Alternatively, when the first semiconductor layer, the active layer, and the second semiconductor layer are formed, the flow rate of the alkyl gas is smaller than that when the three-dimensional island formation layer is formed.
Optionally, the growth pressure of the three-dimensional island formation layer is the same as the growth pressure of the buffer layer.
The technical scheme provided by the embodiment of the disclosure has the beneficial effects that at least:
when the three-dimensional island formation layer grows, the alkyl gas is introduced at a flow rate of not less than 250ml/min and not more than 600ml/min, and the MO concentration in the central area of the reaction cavity can be improved under the pushing of the alkyl gas, so that the MO source is prevented from being mostly concentrated at the edge of the reaction cavity, and the distribution of the MO source in the reaction cavity is more uniform. Meanwhile, pushing transition to the MO source caused by overlarge flow of the alkyl gas is avoided, so that the edge concentration of the reaction cavity is too low, and the distribution uniformity of the MO source is reduced. By enabling MO sources to be distributed more uniformly in the reaction cavity, thickness uniformity of a three-dimensional island formation layer which grows is improved, layers which grow later are flatter, and quality is better, so that light emitting consistency of the miniature light emitting diode is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic structural diagram of a micro light emitting diode according to an embodiment of the present disclosure;
FIG. 2 is a flow chart of a growth method for improving light emission uniformity of a micro light emitting diode according to an embodiment of the present disclosure;
FIG. 3 is a flow chart of another method for growing micro-LEDs to improve light uniformity provided by embodiments of the present disclosure;
fig. 4 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the disclosure;
fig. 5 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the disclosure;
fig. 6 is a schematic diagram of a manufacturing process of a micro light emitting diode according to an embodiment of the disclosure;
fig. 7 is a schematic view illustrating a manufacturing process of a micro light emitting diode according to an embodiment of the disclosure;
fig. 8 is a schematic diagram of a manufacturing process of a micro light emitting diode according to an embodiment of the disclosure;
fig. 9 is a schematic diagram of a manufacturing process of a micro light emitting diode according to an embodiment of the disclosure.
Detailed Description
For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a micro light emitting diode according to an embodiment of the disclosure. As shown in fig. 1, the micro light emitting diode includes a substrate 10, a buffer layer 20, a three-dimensional island formation layer 30, a first semiconductor layer 40, an active layer 50, and a second semiconductor layer 60 sequentially stacked on the substrate 10.
Wherein the first semiconductor layer 40 includes a u-type GaN layer 41 and an n-type GaN layer 42. The active layer 50 includes a plurality of InGaN well layers 51 and a plurality of GaN barrier layers 52 alternately stacked. The second semiconductor layer 60 includes Al x Ga 1-x An N electron blocking layer 61 and a p-type GaN layer 62, wherein x is 0.15.ltoreq.x.ltoreq.0.25.
The micro light emitting diode is small in size, so that one wafer can be manufactured into a plurality of micro light emitting diode chips. This results in the micro light emitting diode chip being sensitive to the uniformity of the wafer thickness, and the poor uniformity of the wafer thickness results in poor uniformity of light emission of the manufactured plurality of micro light emitting diodes, thereby affecting the display effect of the display device.
In order to reduce lattice mismatch between the epitaxial layer and the substrate 10 when manufacturing the micro light emitting diode, the buffer layer 20 is formed on the substrate 10, and the three-dimensional island formation layer 30 grown after the buffer layer 20 plays a role in supporting the top and bottom, so that stress and defects in the epitaxial layer can be reduced, uniformity of each subsequent layer is improved, and the surface of each subsequent layer is leveled. However, the three-dimensional island-forming layer 30 itself needs to have sufficiently high uniformity, and if the uniformity of the three-dimensional island-forming layer 30 to be grown is poor, it is difficult to ensure the flatness of the layers to be grown later, so that the growth of the three-dimensional island-forming layer 30 is important. The concentration distribution of MO sources in the reaction chamber has a large influence on the thickness uniformity of the three-dimensional island formation layer 30 when epitaxial growth is performed. The ideal concentration distribution of the MO source is that the concentration distribution is uniform in all places in the reaction chamber, but in practice, due to factors such as high-speed rotation of the graphite disk in the reaction chamber, the concentration distribution is changed, so that the MO source is often concentrated at the edge of the reaction chamber, the MO source concentration at the edge is higher in the reaction chamber, the MO source concentration in the middle is lower, the thickness uniformity of the three-dimensional island formation layer 30 is greatly affected, and the light emitting uniformity of the manufactured micro light emitting diode is poor.
In order to improve the thickness uniformity of the three-dimensional island formation layer 30 to improve the light emission uniformity of the micro light emitting diode, the embodiments of the present disclosure provide a growth method.
Fig. 2 is a flowchart of a growth method for improving light emission uniformity of a micro light emitting diode according to an embodiment of the present disclosure. As shown in fig. 2, the growth method includes:
in step S11, a substrate 10 is provided.
In step S12, a buffer layer 20 is formed on the substrate 10.
In step S13, the three-dimensional island formation layer 30 is formed on the buffer layer 20.
When the three-dimensional island formation layer 30 is formed, the flow rate of the alkyl gas introduced into the reaction chamber is controlled to be not lower than 250ml/min and not higher than 600ml/min.
In step S14, the first semiconductor layer 40, the active layer 50, and the second semiconductor layer 60 are sequentially formed on the three-dimensional island-formation layer 30.
In the related art, when the three-dimensional island formation layer 30 is grown, the flow rate of the alkyl gas introduced into the reaction chamber is generally about 150 ml/min. According to the embodiment of the disclosure, the flow rate of the alkyl gas is increased, when the three-dimensional island formation layer is grown, the alkyl gas is introduced at the flow rate of not lower than 250ml/min and not higher than 600ml/min, and under the pushing of the higher flow rate of the alkyl gas, the MO concentration in the central area of the reaction cavity can be increased, and the phenomenon that the MO source is mostly concentrated at the edge of the reaction cavity is avoided, so that the distribution of the MO source in the reaction cavity is more uniform. Meanwhile, pushing transition to the MO source caused by overlarge flow of the alkyl gas is avoided, so that the edge concentration of the reaction cavity is too low, and the distribution uniformity of the MO source is reduced. By enabling MO sources to be distributed more uniformly in the reaction cavity, thickness uniformity of a three-dimensional island formation layer which grows is improved, layers which grow later are flatter, and quality is better, so that light emitting consistency of the miniature light emitting diode is improved.
Fig. 3 is a flow chart of another growth method for improving light emission uniformity of a micro led according to an embodiment of the present disclosure. In particular implementations, embodiments of the present disclosure may employ high purity H 2 Or/and N 2 As carrier gas, trimethylgallium TEGa or triethylgallium TMGa as Ga source, trimethylindium TMIn as In source, silane SiH 4 Trimethylaluminum TMAL as an aluminum source, magnesium-dicyclopentadiene Cp as an n-type dopant 2 Mg acts as a p-type dopant.
Fig. 4 to 9 are schematic views illustrating a growth process of a micro light emitting diode according to an embodiment of the present disclosure.
As shown in fig. 4 to 9, the growth method includes:
in step S21, a substrate 10 is provided.
Illustratively, the substrate 10 is a sapphire substrate, a silicon substrate, or a silicon carbide substrate. The substrate 10 may be a flat substrate or a patterned substrate.
As an example, in the presently disclosed embodiment, the substrate 10 is a sapphire substrate. The sapphire substrate is a common substrate, the technology is mature, and the cost is low. Specifically, the substrate can be a patterned sapphire substrate or a sapphire flat substrate.
In step S21, the sapphire substrate may be pretreated, placed in a MOCVD (Metal-organic Chemical Vapor Deposition; metal organic chemical vapor deposition) reaction chamber, and baked for 12 to 18 minutes. As an example, in the embodiment of the present disclosure, the sapphire substrate is baked for 15 minutes.
Specifically, the baking temperature may be 1000 ℃ to 1200 ℃, and the pressure in the MOCVD reaction chamber during baking may be 100Torr to 200Torr.
In step S22, a buffer layer 20 is formed on the substrate 10.
As shown in fig. 4, a buffer layer 20 is formed on one surface of the substrate 10.
Specifically, the buffer layer 20 may be formed on the [0001] plane of the sapphire substrate.
The thickness of the buffer layer 20 may be 10 nm-30 nm, the thickness of the buffer layer 20 may affect the quality of each layer grown subsequently, if the thickness of the buffer layer 20 is too thin, the surface of the buffer layer 20 may be loose and rough, a good template cannot be provided for the growth of the subsequent structure, and as the thickness of the buffer layer 20 increases, the surface of the buffer layer 20 becomes gradually denser and flatter, which is beneficial to the growth of the subsequent structure, but if the thickness of the buffer layer 20 is too thick, the surface of the buffer layer 20 may be too dense, which is also unfavorable for the growth of the subsequent structure, and lattice defects in the epitaxial layer cannot be reduced.
As an example, in the presently disclosed embodiment, the buffer layer 20 has a thickness of 20nm.
Optionally, the growth temperature of buffer layer 20 is 530 ℃ to 560 ℃. As an example, in the presently disclosed embodiment, the growth temperature of the buffer layer 20 is 550 ℃.
Alternatively, the buffer layer 20 is grown at a pressure of 200torr to 500torr. By way of example, in the disclosed embodiment, the buffer layer 20 is grown at a pressure of 400torr.
In step S23, a three-dimensional island formation layer 30 is grown on the buffer layer 20.
As shown in fig. 5, a three-dimensional island formation layer 30 is grown on the buffer layer 20, and the three-dimensional island formation layer 30 is a GaN layer.
The formation of the three-dimensional island-formation layer 30 includes a non-grown segment and a grown segment subsequent to the non-grown segment. Specifically, in the non-growth section, the flow rate of the Ga source is 0, and the flow rate of the alkyl gas is not less than 300ml/min and not more than 600ml/min.
In the growth section, the flow rate of the Ga source is more than 0, and the flow rate of the alkyl gas is not less than 250ml/min and not more than 500ml/min.
an alkyl gas is injected into the reaction chamber through an alkyl pipeline. Each gas line of the alkyl line includes a Mo source gas line. In the non-growth section, the flow rate of the Ga source is 0, i.e., the Ga source is turned off. In this process, the three-dimensional island formation layer 30 has not been deposited yet, and the continuously supplied alkyl gas can drain the Ga source remaining in the pipe after the Ga source is turned off. The growth of the three-dimensional island-formation layer 30 requires a Ga source of sufficient concentration in the reaction chamber, and if non-growth segments are skipped, that is, the Ga source is not turned off, and the flow rate of the Ga source is directly adjusted to a required size to perform the growth of the three-dimensional island-formation layer 30, which results in that the residual Ga source in the tube is also introduced into the growth, and the addition of the residual Ga source affects the concentration of the Ga source in the reaction chamber, thereby affecting the growth quality of the three-dimensional island-formation layer 30. After the residual Ga source in the pipeline is exhausted, the flow of the Ga source is set to the required size for growth, so that the concentration of the Ga source in the reaction cavity can meet the requirement.
In the non-growth section, the introduced alkyl gas promotes the flow of the MO source in the reaction cavity, so that the distribution of the MO source is more uniform, the flow is set at 300 ml/min-600 ml/min, the concentration of the MO source in the center of the reaction cavity is improved for obvious promotion, the phenomenon that the concentration distribution of the MO source in the reaction cavity is overturned and the concentration of the MO source at the edge is lower than that of the MO source in the center is avoided due to overlarge flow.
Preferably, the flow rate of the non-growth stage alkyl gas is 350ml/min to 550ml/min.
In the growth section, the flow rate of the introduced alkyl gas is set at 250 ml/min-500 ml/min, so that the flow of the MO source in the reaction cavity is obviously promoted, the distribution of the MO source is more uniform, the concentration of the MO source in the center of the reaction cavity is improved, and the phenomenon that the concentration of the MO source at the edge of the reaction cavity is too low due to overlarge flow rate is avoided.
Preferably, the flow rate of the alkyl gas in the growth section is 300ml/min to 450ml/min.
In some examples, the flow rate of the alkyl gas in the non-growth section is higher than the flow rate of the alkyl gas in the growth section.
The flow rate of the non-growth-stage alkyl gas is set to be slightly larger within the acceptable range of the MO source concentration distribution in the reaction chamber, so as to accelerate the removal of residual Ga source in the pipeline, and improve the overall production efficiency. In addition, in the growth section, too high flow rate can cause too much amount of introduced alkyl gas, dilute the MO source in the reaction chamber, and possibly cause too low concentration of the MO source in the center and the edge of the reaction chamber, thereby affecting the overall chemical reaction. And in the non-growth section, enough MO source is introduced into the reaction cavity at a higher flow, so that the concentration of the MO source in the central area of the reaction cavity is improved, the enough and stable amount of the MO source is ensured in the growth section, especially in the central area, the amount of the MO source is maintained at a lower flow in the growth stage, the uniformity of the distribution of the MO source is improved, and the light emitting uniformity of the miniature light emitting diode is further improved.
Alternatively, the duration of the non-growing section is from 3 minutes to 10 minutes.
The continuous introduction of the alkyl gas in the non-growth section not only makes the concentration distribution of the MO source in the reaction chamber more uniform, but also plays the role of removing the residual Ga source in the pipeline. The duration of the non-growth section is too short, and the residual Ga source in the pipe may not be purged, and the duration is too long, which may reduce the overall production efficiency and result in increased costs.
Alternatively, the growth pressure of the three-dimensional island formation layer 30 is 200torr to 600torr. The growth temperature of the three-dimensional island formation layer 30 is 1000-1050 ℃.
Within this pressure and temperature range, three-dimensional growth of the three-dimensional island-formation layer 30 is favored.
In some examples, the growth pressure of the three-dimensional island formation layer 30 is the same as the growth pressure of the buffer layer 20.
For example, the growth pressure of the three-dimensional island formation layer 30 and the growth pressure of the buffer layer 20 are both 400torr. The buffer layer 20 and the three-dimensional island formation layer 30 are grown by adopting the same growth pressure, so that the pressure regulation of the reaction cavity can be facilitated, and the production is simplified.
After the growth of the three-dimensional island-formation layer 30 is completed, the subsequent growth of the first semiconductor layer 40, the active layer 50, and the second semiconductor layer 60 may be performed. Wherein the first semiconductor layer 40 includes a u-type GaN layer 41 and an n-type GaN layer 42. The active layer 50 includes an alternating currentA plurality of InGaN well layers 51 and a plurality of GaN barrier layers 52 stacked alternately. The second semiconductor layer 60 includes Al x Ga 1-x An N electron blocking layer 61 and a p-type GaN layer 62, wherein x is 0.15.ltoreq.x.ltoreq.0.25.
In step S24, a u-type GaN layer 41 is grown on the three-dimensional island-formation layer 30.
As shown in fig. 6, a u-type GaN layer 41 is grown on the three-dimensional island-formation layer 30. The thickness of the u-type GaN layer 41 may be 2 μm to 3.5 μm, and in this embodiment, the thickness of the u-type GaN layer 41 is 3 μm.
The growth temperature of the u-type GaN layer 41 may be 1000-1100 deg.C and the growth pressure may be 200-600 torr. In this embodiment, the growth temperature of the u-type GaN layer 41 is 1050℃and the growth pressure is 400torr.
When the u-type GaN layer 41 is grown, the flow rate of the alkyl gas is smaller than that when the three-dimensional island-formation layer 30 is formed.
This is because when the three-dimensional island formation layer 30 is grown, the MO source concentration distribution in the reaction chamber is made more uniform by the higher flow rate of the alkyl gas, so that the grown three-dimensional island formation layer 30 has higher thickness uniformity, and thus each subsequent layer is easier to grow more smoothly even if the flow rate of the alkyl gas is reduced.
In fact, not only the u-type GaN layer 41 but also an n-type GaN layer 42, an InGaN well layer 51, a GaN barrier layer 52, al are grown subsequently x Ga 1-x In the process of the N-electron blocking layer 61 and the p-type GaN layer 62, the flow rate of the alkyl gas may be smaller than that in the formation of the three-dimensional island formation layer 30.
In step S25, an n-type GaN layer 42 is grown on the u-type GaN layer 41.
As shown in fig. 7, an n-type GaN layer 42 is grown on the u-type GaN layer 41.
Alternatively, the growth temperature of the n-type GaN layer 42 is 1000-1100 ℃. As an example, in the presently disclosed embodiment, the growth temperature of the n-type GaN layer 42 is 1050 ℃.
Alternatively, the growth pressure of the n-type GaN layer 42 may be 150torr to 300torr. By way of example, in the presently disclosed embodiment, the n-type GaN layer 42 is grown at a pressure of 200torr.
While growing the n-type GaN layer 42, it is performedSilane doping, the Si doping concentration in the n-type GaN layer 42 may be 10 17 cm -3 ～10 18 cm -3 . As an example, in the presently disclosed embodiments, the Si doping concentration in the n-type GaN layer 42 is 5×10 17 cm -3 。
The thickness of the n-type GaN layer 42 may be 2 μm to 3 μm, and in the embodiment of the present disclosure, the thickness of the n-type GaN layer 42 is 2.5 μm.
In step S26, an active layer 50 is grown on the n-type GaN layer 42.
As shown in fig. 8, an active layer 50 is grown on the n-type GaN layer 42.
In implementation, the active layer 50 may include a plurality of InGaN well layers 51 and a plurality of GaN barrier layers 52 alternately stacked.
Alternatively, the number of periods in which the InGaN well layers 51 and the GaN barrier layers 52 are alternately stacked may be 3 to 8. Illustratively, in the embodiment of the present disclosure, the number of periods in which the InGaN well layers 51 and the GaN barrier layers 52 are alternately stacked is 5.
Note that fig. 8 shows only a partial structure of the active layer 50, and is not intended to limit the number of cycles in which the InGaN well layer 51 and the GaN barrier layer 52 are alternately stacked.
In some examples, the growth temperature of the InGaN well layer 51 is 760 ℃ to 780 ℃. The growth temperature of the GaN barrier layer 52 is 860-890 ℃. As an example, in the embodiment of the present disclosure, the growth temperature of the InGaN well layer 51 is 770 ℃, and the growth temperature of the GaN barrier layer 52 is 880 ℃.
In some examples, the growth pressure of the InGaN well layer 51 and the GaN barrier layer 52 may be 150torr to 300torr. By way of example, in the presently disclosed embodiment, the growth pressure of both the InGaN well layer 51 and the GaN barrier layer 52 is 200torr.
Alternatively, the thickness of the InGaN well layer 51 may be 2nm to 4nm. The thickness of the GaN barrier layer 52 may be 9nm to 14nm.
Illustratively, in the presently disclosed embodiment, the InGaN well layer 51 has a thickness of 3nm. The thickness of the GaN barrier layer 52 is 11nm.
After the active layer 50 is grown, a second semiconductor layer 60 is grown on the active layer 50, and in the embodiment of the present disclosure, the second semiconductor layer 60 includes Al sequentially laminated on the active layer 50 x Ga 1-x An N electron blocking layer 61 and a p-type GaN layer 62, wherein x is 0.15.ltoreq.x.ltoreq.0.25. The growth of the second semiconductor layer 60 includes the following steps S27 to S28.
In step S27, al is grown on the active layer 50 x Ga 1-x N electron blocking layer 61.
As shown in fig. 9, al is grown on the active layer 50 x Ga 1-x N electron blocking layer 61.
Specifically, al x Ga 1-x The growth temperature of the N electron blocking layer 61 may be 930 ℃ to 970 ℃, as an example, al in the embodiments of the present disclosure x Ga 1-x The growth temperature of the N electron blocking layer 61 was 960 ℃.
Specifically, al x Ga 1-x The growth pressure of the N-electron blocking layer 61 may be 50torr to 150torr. As an example, in the embodiments of the present disclosure, al x Ga 1-x The N-electron blocking layer 61 was grown at a pressure of 100torr.
Alternatively, al x Ga 1-x The thickness of the N electron blocking layer 61 may be 30nm to 50nm. As an example, in the embodiments of the present disclosure, al x Ga 1-x The thickness of the N electron blocking layer 61 was 40nm. If Al is x Ga 1-x Too thin a thickness of the N-electron blocking layer 61 reduces the blocking effect on electrons, if Al x Ga 1-x If the N electron blocking layer 61 is too thick, al is increased x Ga 1-x The N-electron blocking layer 61 absorbs light, resulting in a decrease in the luminous efficiency of the micro light emitting diode.
In step S28, at Al x Ga 1-x A p-type GaN layer 62 is grown on the N-electron blocking layer 61.
At Al x Ga 1-x The structure after growing the p-type GaN layer 62 on the N-electron blocking layer 61 may be referred to as fig. 1.
Specifically, the growth temperature of the p-type GaN layer 62 may be 940 to 980 ℃, and in the embodiment of the present disclosure, the growth temperature of the p-type GaN layer 62 is 960 ℃.
Specifically, the growth pressure of the p-type GaN layer 62 may be 200torr to 600torr. By way of example, in the presently disclosed embodiment, the p-type GaN layer 62 is grown at a pressure of 400torr.
Alternatively, the thickness of the p-type GaN layer 62 may be 50nm to 80nm. As an example, in the presently disclosed embodiment, the thickness of the p-type GaN layer 62 is 60nm.
Alternatively, the doping concentration of Mg in the p-type GaN layer 62 may be 10 18 cm -3 ～10 20 cm -3 。
Subsequent steps such as annealing, electrode fabrication, etc. may also be performed after step S28 to produce a complete micro led.
For example, the annealing treatment may be performed in a nitrogen atmosphere at 650 to 850 ℃ for 5 to 15 minutes.
The foregoing description of the preferred embodiments of the present disclosure is provided for the purpose of illustration only, and is not intended to limit the disclosure to the particular embodiments disclosed, but on the contrary, the intention is to cover all modifications, equivalents, alternatives, and alternatives falling within the spirit and principles of the disclosure.
Claims (9)
1. A method of growing a light emitting diode comprising:
providing a substrate (10);
forming a buffer layer (20) on the substrate (10);
forming a three-dimensional island-forming layer (30) on the buffer layer (20), a growth process of the three-dimensional island-forming layer (30) including a non-growth section and a growth section subsequent to the non-growth section; in the non-growth section, the flow rate of the Ga source is 0, and the flow rate of the alkyl gas is not lower than 300ml/min and not higher than 600ml/min; in the growth section, the flow rate of the Ga source is more than 0, and the flow rate of the alkyl gas is not lower than 250ml/min and not higher than 500ml/min;
a first semiconductor layer (40), an active layer (50), and a second semiconductor layer (60) are sequentially formed on the three-dimensional island-formation layer (30).
2. The growth method according to claim 1, wherein the flow rate of the alkyl gas in the non-growth section is higher than the flow rate of the alkyl gas in the growth section.
3. The growth method according to claim 2, wherein the flow rate of the alkyl gas in the non-growth stage is 350ml/min to 550ml/min.
4. The method according to claim 2, wherein the flow rate of the alkyl gas in the growth stage is 300ml/min to 450ml/min.
5. A growth method according to any one of claims 2 to 4, wherein the non-growth stage has a duration of 3min to 10min.
6. A growth method according to any one of claims 1 to 4, wherein the growth pressure of the three-dimensional island formation layer (30) is 200torr to 600torr.
7. A growth method according to any one of claims 1 to 4, wherein the growth temperature of the three-dimensional island-forming layer (30) is 1000 ℃ to 1050 ℃.
8. The growth method according to any one of claims 1 to 4, wherein a flow rate of an alkyl gas at the time of forming the first semiconductor layer (40), the active layer (50), and the second semiconductor layer (60) is smaller than a flow rate of an alkyl gas at the time of forming the three-dimensional island formation layer (30).
9. The growth method according to any one of claims 1 to 4, wherein the growth pressure of the three-dimensional island formation layer (30) is the same as the growth pressure of the buffer layer (20).
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