CN107424895B - Front-end processing device of semiconductor equipment - Google Patents
Front-end processing device of semiconductor equipment Download PDFInfo
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- CN107424895B CN107424895B CN201610349539.7A CN201610349539A CN107424895B CN 107424895 B CN107424895 B CN 107424895B CN 201610349539 A CN201610349539 A CN 201610349539A CN 107424895 B CN107424895 B CN 107424895B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/3288—Maintenance
Abstract
The invention provides a semiconductor device front-end processing device. The semiconductor equipment front-end processing device comprises a microenvironment providing chamber, a gas flow inlet is formed in one end of the microenvironment providing chamber, and the microenvironment providing chamber is used for providing a uniform gas flow environment for a substrate arranged in the microenvironment providing chamber. This semiconductor equipment front end processing apparatus can avoid entering into the remaining halogen gas in the substrate surface in the microenvironment provides the cavity and compound and the steam condensation reaction after the sculpture to avoid forming the condensation granule on the surface of substrate, and then avoided the condensation granule to form the corruption to the spare part in the microenvironment provides the cavity, prolonged the microenvironment and provided the life of the inside spare part of cavity, the while has still avoided the condensation granule to cause harmful effects to the substrate after the sculpture, the sculpture yield of substrate has been improved.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a front-end processing device of semiconductor equipment.
Background
Plasma devices are widely used in the manufacturing process of Integrated Circuits (ICs) or MEMS devices. The etching process is a key process for forming a pattern in chip manufacturing, plasma is generated by process gas through radio frequency, the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles interact with a substrate to enable the surface of a material to generate various physical and chemical reactions, so that the surface performance of the material is changed, and the etching process is completed.
In the etching process, since halogen element gas or compound remains on the surface of the Wafer (Wafer) after the etching is finished, the remaining halogen gas (e.g. HBr) and its compound can generate Condensation reaction under the action of water vapor in the atmosphere, and Condensation particles (Condensation defects) are formed on the surface of the Wafer (Wafer). The particles are generally in the shape of water drops and are irregularly distributed on the surface of the wafer, so that the yield of etched products is seriously influenced. Meanwhile, the halogen gas and the compound formed by the halogen gas and the compound under the action of water vapor in the atmosphere can corrode the wafer transmission system, so that each transmission mechanism in the wafer transmission system, particularly relevant parts in an etching process front-end processing mechanism (EFEM) can be damaged and failed.
As shown in fig. 1 and 2, the structure of the plasma etcher is mainly divided into three parts: (1) the device comprises an etching process mechanism 8, a transmission mechanism 9 and a front end processing mechanism (EFEM)10 of the etching process. FIG. 1 shows a typical multi-etch process chamber structure, where four etch process chambers 4 are provided for performing a plasma etch process; the transmission mechanism is used for completing the transfer of the wafer in the process and comprises two conversion channels 5 and a vacuum transmission cavity 6, wherein the conversion channels 5 are used for completing the conversion of the wafer between the atmospheric state and the vacuum state; the vacuum transmission cavity 6 is connected with the etching process chamber 4 and is used for transmitting the wafer; the etching process front-end processing mechanism comprises an etching process front-end processing chamber 7 used for providing a microenvironment for wafers (wafers), and uniform air flow from top to bottom is generated inside the etching process front-end processing chamber 7, so that the wafers are ensured to be in a clean environment, and the influence of particles generated in the etching process and the transmission process on the wafers is avoided.
Fig. 3 shows a transmission path of a wafer during an etching process in the etcher structure shown in fig. 1. Firstly, a wafer is sent into an etching process front-end processing chamber 7, one of the conversion channels 5 of the transmission mechanism of the etching machine is used for transmitting the wafer into a vacuum transmission chamber 6, then the wafer is subjected to an etching process in a designated or random etching process chamber 4, after the process is finished, the wafer enters the other conversion channel 5 from the etching process chamber 4 through the vacuum transmission chamber 6, then the other conversion channel 5 is inflated to an atmospheric pressure state and a gate valve connected with the etching process front-end processing chamber 7 is opened, so that the wafer is returned to the etching process front-end processing chamber 7 in the atmospheric pressure state from the vacuum etching process chamber 4; finally, the wafer is taken out of the etching process front-end processing chamber 7.
Because the atmosphere environment is usually present in the front-end processing chamber of the etching process, when the Wafer after the etching process is transferred to the front-end processing chamber of the etching process, the halogen gas and the compound thereof remained on the surface of the Wafer generate condensation reaction under the action of water vapor in the atmosphere, condensation particles are formed on the surface of the Wafer (Wafer) in a large quantity, and the condensation particles not only affect the yield of the etching product, but also cause corrosion pollution to parts in the front-end processing chamber of the etching process, and seriously cause damage and failure of the parts in the front-end processing chamber of the etching process, thereby affecting the etching yield of the product.
At present, a wafer Factory (FAB) can only rely on frequent regular cleaning and maintenance of equipment to reduce the problems of corrosion of parts and defects (defects) on the etched surface of a wafer, and the maintenance cost of the parts is high.
In order to avoid the corrosion effect of the condensed particles on the etching yield and the transmission system, there is also a technique that before the etching process, after the Wafer (Wafer) is put into the etching process chamber through the transmission path, nitrogen (N) is introduced2) Or argon (Ar) and other gases are used for purging the wafer and removing particles falling on the surface of the wafer in the transmission process; meanwhile, after the etching process is finished and before the wafer is transferred out of the etching process chamber, nitrogen (N) is introduced2) Or argon (Ar) and other gases purge the surface of the wafer, so that the by-products in the etching process are removed to form attachments on the surface of the wafer, and the influence of particles falling on the surface of the wafer in the transmission process or the etching by-products on the etching yield and the transmission system is reduced. However, this method only performs gas purging in the etching process chamber, and only can improve the attachments on the wafer surface, reduce the influence of the etching by-products falling on the wafer surface in the transmission process or the etching process on the etching yield, but cannot avoid the condensation of the halogen gas and the compounds thereof and the water vapor remaining on the wafer surface in the front-end processing chamber of the etching process, cannot solve the corrosion influence of the condensed particles on the front-end processing mechanism of the etching process, and cannot avoid the influence of the condensed particles on the etching yield.
Disclosure of Invention
The present invention provides a front-end processing apparatus for semiconductor devices, which solves the above-mentioned problems in the prior art. This semiconductor equipment front end processing apparatus can avoid entering into the remaining halogen gas in the substrate surface in the microenvironment provides the cavity and compound and the steam condensation reaction after the sculpture to avoid forming the condensation granule on the surface of substrate, and then avoided the condensation granule to form the corruption to the spare part in the microenvironment provides the cavity, prolonged the microenvironment and provided the life of the inside spare part of cavity, the while has still avoided the condensation granule to cause harmful effects to the substrate after the sculpture, the sculpture yield of substrate has been improved.
The invention provides a front-end processing device of semiconductor equipment, which comprises a microenvironment providing chamber, wherein the microenvironment providing chamber is used for providing a uniform air flow environment for a substrate placed in the microenvironment providing chamber, one end of the microenvironment providing chamber is provided with an air flow inlet, and the front-end processing device further comprises a purging mechanism, wherein the purging mechanism is connected to the air flow inlet and is used for inputting purging air flow into the microenvironment providing chamber.
Preferably, the purging mechanism comprises a uniform flow cavity, the uniform flow cavity is a completely closed cavity, and an outlet of the uniform flow cavity is connected to the airflow inlet and used for inputting uniform airflow into the microenvironment providing chamber.
Preferably, a uniform flow plate is further arranged in the uniform flow cavity, and the uniform flow plate is arranged at an inlet of the uniform flow cavity and used for uniformly diffusing the air flow input into the uniform flow cavity from the inlet of the uniform flow cavity.
Preferably, the flow homogenizing plate comprises a plate body and a plurality of through holes formed in the plate body, the through holes are identical in shape and size, and the through holes are uniformly distributed in the plate body.
Preferably, the purging mechanism further comprises a pressure gauge and a pressure regulating valve, an output end of the pressure gauge is connected to an inlet of the uniform flow cavity, and an input end of the pressure gauge is connected to an output end of the pressure regulating valve; the pressure regulating valve is used for regulating the pressure of the purging airflow input into the uniform flow cavity; the pressure gauge is used for displaying the regulation of the pressure regulating valve on the pressure of the purge gas flow.
Preferably, the purging mechanism further comprises an on-off valve having one end connected to the pressure regulating valve and the other end connected to a supply of a purge gas flow, the on-off valve being configured to open or close the supply, the supply being configured to supply an inert gas or compressed air to the microenvironment supply chamber.
Preferably, the purging mechanism further comprises a water mist filter, an inlet of the water mist filter is connected with the supply source, and an outlet of the water mist filter is connected with the switch valve; the water mist filter is used for filtering water vapor in the purge gas provided by the supply source.
Preferably, the purging mechanism further comprises a mass flow meter, an input end of the mass flow meter is connected with an output end of the pressure gauge, an output end of the mass flow meter is connected with an inlet of the uniform flow cavity, and the mass flow meter is used for controlling the flow of the purging airflow input to the uniform flow cavity.
Preferably, the purging mechanism further comprises a flow restrictor, an input end of the flow restrictor is connected with an output end of the pressure gauge, an output end of the flow restrictor is connected with an inlet of the uniform flow cavity, and the flow restrictor is used for controlling the flow rate of the purging airflow input to the uniform flow cavity.
Preferably, the uniform flow cavity is made of stainless steel.
Preferably, a fan is arranged in the microenvironment providing chamber, the fan is correspondingly arranged at the air inlet, and when the fan rotates, the pressure of the purging air flow input into the microenvironment providing chamber is greater than the gas pressure outside the microenvironment providing chamber.
The invention has the beneficial effects that: according to the semiconductor equipment front-end processing device provided by the invention, the purging mechanism is arranged, so that the microenvironment of purging air flow is formed in the microenvironment providing chamber, water vapor outside the microenvironment providing chamber can not enter the microenvironment providing chamber, halogen gas and compounds left on the surface of the substrate which enters the microenvironment providing chamber after etching can not be subjected to condensation reaction with the water vapor, and condensation particles can not be formed on the surface of the substrate, so that the corrosion of the condensation particles on parts in the microenvironment providing chamber is avoided, the service life of the parts in the microenvironment providing chamber is prolonged, the adverse effect of the condensation particles on the etched substrate is also avoided, and the etching yield of the substrate is improved.
Drawings
FIG. 1 is a schematic diagram of a prior art plasma etcher;
FIG. 2 is a schematic diagram of a transmission and processing structure of the plasma etcher of FIG. 1;
FIG. 3 is a schematic flow chart of a transfer and process flow of the plasma etcher of FIG. 1;
fig. 4 is a schematic structural diagram of a front-end processing apparatus of a semiconductor device in embodiment 1 of the present invention;
FIG. 5 is a schematic structural view of the flow equalizer plate of FIG. 4;
fig. 6 is a schematic structural diagram of a front-end processing apparatus of a semiconductor device in embodiment 2 of the present invention.
Wherein the reference numbers indicate:
1. a microenvironment-providing chamber; 11. an airflow inlet; 12. a fan; 13. a filter; 2. a purging mechanism; 21. a flow homogenizing cavity; 22. a flow homogenizing plate; 220. a plate body; 221. a through hole; 23. a pressure gauge; 24. a pressure regulating valve; 25. an on-off valve; 26. a mass flow meter; 27. a water mist filter; 3. providing a source; 4. etching the process chamber; 5. converting a channel; 6. a vacuum transfer chamber; 7. etching process front-end processing chamber; 8. an etching process mechanism; 9. a transport mechanism; 10. and the front end processing mechanism of the etching process.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, a semiconductor device front-end processing apparatus provided by the present invention is further described in detail below with reference to the accompanying drawings and the detailed description.
Example 1:
the embodiment provides a front-end processing device of a semiconductor device, as shown in fig. 4, including a microenvironment providing chamber 1 for providing a uniform gas flow environment for a substrate placed therein, a gas flow inlet 11 is provided at one end of the microenvironment providing chamber 1, the front-end processing device further includes a purging mechanism 2, and the purging mechanism 2 is connected to the gas flow inlet 11 for inputting a purging gas flow into the microenvironment providing chamber 1.
It should be noted that the purge mechanism 2 supplies the inert gas, such as nitrogen N, as the purge gas flow to the microenvironment providing chamber 12And argon Ar, wherein the inert gas does not contain water vapor, so that halogen gas and compounds thereof remained on the surface of the substrate after the etching process can be prevented from being incapable of generating condensation reaction with the water vapor, and thus condensation particles can not be formed on the surface of the substrate.
In this embodiment, sweep mechanism 2 and include even flow cavity 21, even flow cavity 21 is totally enclosed cavity, and even flow cavity 21's exit linkage is in airflow inlet 11 for input even air current in providing cavity 1 to the microenvironment. The totally enclosed cavity structure of the uniform flow cavity 21 can prevent external gas (such as air) from entering the cavity, so that uniform and pure purge air flow can be provided for the microenvironment providing chamber 1 through the uniform flow cavity 21.
Wherein, the uniform flow cavity 21 is made of stainless steel. The stainless steel material will not react with the purge gas flow, thereby ensuring that the clean purge gas flow can be provided for the microenvironment providing chamber 1 through the flow equalizing chamber 21.
In this embodiment, a flow equalizing plate 22 is further disposed in the flow equalizing chamber 21, and the flow equalizing plate 22 is disposed at an inlet of the flow equalizing chamber 21 and is used for uniformly diffusing the air flow input from the inlet of the flow equalizing chamber 21 into the flow equalizing chamber 21.
As shown in fig. 5, the flow equalizing plate 22 includes a plate body 220 and a plurality of through holes 221 formed on the plate body 220, wherein the through holes 221 have the same shape and size, and the through holes 221 are uniformly distributed on the plate body 220. By the arrangement, the purge gas flow entering the uniform flow cavity 21 from the inlet of the uniform flow cavity 21 can be uniformly diffused in the uniform flow cavity 21 after passing through the uniform flow plate 22, so that the purge gas in the uniform flow cavity 21 can be uniformly input into the microenvironment providing cavity 1, and further uniform purge gas flow can be provided for the microenvironment providing cavity 1, and a uniform purge gas flow environment can be provided for the substrate placed therein.
In this embodiment, the purging mechanism 2 further includes a pressure gauge 23 and a pressure regulating valve 24, an output end of the pressure gauge 23 is connected to an inlet of the uniform flow cavity 21, and an input end of the pressure gauge 23 is connected to an output end of the pressure regulating valve 24; the pressure regulating valve 24 is used for regulating the pressure of the purging gas flow input into the uniform flow cavity 21; the pressure gauge 23 is used for displaying the regulation of the pressure regulating valve 24 on the pressure of the purge gas flow. The pressure gauge 23 and the pressure regulating valve 24 are matched, and the pressure of the purging air flow input into the uniform flow cavity 21 can be regulated, so that the purging air flow entering into the uniform flow cavity 21 has certain pressure, the purging air flow is input into the microenvironment providing cavity 1 according to certain pressure, and finally the purging air flow in the microenvironment providing cavity 1 has certain pressure. Generally, the pressure that the microenvironment provided the interior sweeping gas flow of cavity 1 is greater than the outside gas pressure of microenvironment provided cavity 1, can ensure like this that the gas in the external environment can not enter into microenvironment provided the inside of cavity 1 to ensure that microenvironment provides the interior pure sweeping gas flow environment of cavity 1, make the surperficial residue of substrate can not take place condensation reaction with steam after the sculpture, avoid forming the condensation granule that has the corrosive effect to spare part in microenvironment provided cavity 1.
In this embodiment, the purge mechanism 2 further includes an on-off valve 25, one end of the on-off valve 25 is connected to the pressure regulating valve 24, and the other end is connected to the supply source 3 of the purge gas flow, and the on-off valve 25 is used for opening or closing the supply source 3 so that the supply source 3 outputs or does not output the purge gas. Wherein the supply source 3 is used to supply an inert gas, such as nitrogen N, to the microenvironment-providing chamber 12And argon Ar. The setting of ooff valve 25 can control the microenvironment and provide the gaseous input of sweeping in the cavity 1 to ensure to open the gaseous input of sweeping when needs sweep, close the gaseous input of sweeping when not needing to sweep, and then can realize the effective utilization to sweeping gas.
In this embodiment, the purging mechanism 2 further includes a mass flow meter 26, an input end of the mass flow meter 26 is connected to an output end of the pressure gauge 23, an output end of the mass flow meter 26 is connected to an inlet of the uniform flow cavity 21, and the mass flow meter 26 is configured to control a flow rate of the purging airflow input to the uniform flow cavity 21. The setting of mass flow meter 26, through the flow of the purge air current of control input to even flow cavity 21, can control well the flow of input purge air current in microenvironment supply chamber 1 to make and to provide the purge air current of certain flow for the substrate of arranging wherein in microenvironment supply chamber 1, and then promoted the effect of purging of substrate surface residue, can also ensure simultaneously that the purge air current in microenvironment supply chamber 1 has the pressure that meets the requirements.
In this embodiment, a fan 12 is provided in the microenvironment providing chamber 1, the fan 12 is correspondingly provided at the airflow inlet 11, and when the fan 12 rotates, the pressure of the purge airflow inputted into the microenvironment providing chamber 1 may be greater than the external gas pressure of the microenvironment providing chamber 1. The setting of fan 12 enables that the outside gas of microenvironment supply chamber 1 can not enter into microenvironment supply chamber 1 inside to prevent that the outside air that contains steam of microenvironment chamber 1 from entering into microenvironment chamber 1 inside, and then avoided substrate surface residue and steam to take place the condensation reaction, form the condensation granule that has the corrosion to spare part in microenvironment supply chamber 1.
In addition, still be provided with filter 13 in the microenvironment provides chamber 1, filter 13 corresponds and is located one side that fan 12 back to airflow inlet 11, and filter 13 can filter the steam that enters into in the microenvironment provides chamber 1 in the purge airflow, makes the steam in the purge airflow can't take place condensation reaction with the residue on substrate surface to avoid providing the formation of the condensation particle that has the corrosive effect to spare part in the microenvironment provides chamber 1.
Example 2:
unlike the embodiment 1, in this embodiment, as shown in fig. 6, the purge flow input into the microenvironment providing chamber 1 by the purge mechanism 2 is compressed air, and the content of moisture in the compressed air is small, for example, the content of moisture in the compressed air is only 6-8 PPM. Because the compressed air contains a trace amount of water vapor, the purging mechanism 2 in this embodiment further includes a water mist filter 27 on the basis of embodiment 1, an inlet of the water mist filter 27 is connected to the supply source 3, and an outlet of the water mist filter 27 is connected to the on-off valve 25; the water mist filter 27 is used to filter water vapor from the purge gas supplied from the supply source 3.
Water smoke filter 27's setting in this embodiment, can prevent that the trace steam in the sweep air current that provides source 3 provides from entering into in microenvironment provides chamber 1, thereby avoid substrate surface residue and steam to take place condensation reaction, the formation has the condensation granule of corrosion to spare part in microenvironment provides chamber 1, and then avoided condensation granule to form the corruption to spare part in microenvironment provides chamber 1, the life of microenvironment providing 1 inside spare part of chamber has been prolonged, the while has still avoided condensation granule to lead to the fact harmful effects to the substrate after the sculpture, the etching yield of substrate has been improved.
Other structures of the front-end processing apparatus of a semiconductor device in this embodiment are the same as those in embodiment 1, and are not described herein again.
Example 3:
the present embodiment provides a semiconductor device front-end processing apparatus, and is different from embodiment 1-2 in that a flow restrictor is used in the present embodiment for controlling the flow rate of the purge gas flow inputted into the flow equalizing chamber, that is, the flow restrictor is used in the present embodiment instead of the mass flow meter in embodiment 1-2.
The input end of the current limiter is connected with the output end of the pressure gauge, the output end of the current limiter is connected with the inlet of the uniform flow cavity, and the current limiter is used for controlling the flow of the purging airflow input to the uniform flow cavity. The setting of current limiter through the flow of the purge gas flow of control input to even flow cavity, can control the flow of the purge gas flow of input to little environmental protection chamber well to make can provide the purge gas flow of certain flow for the substrate of arranging wherein in little environmental protection chamber, and then promoted the effect of sweeping of substrate surface residue, can also ensure simultaneously that little environmental protection chamber provides the purge gas flow in the chamber and has the pressure that meets the requirements.
Other structures of the front-end processing apparatus of a semiconductor device in this embodiment are the same as those in embodiment 1 or 2, and are not described herein again.
Beneficial effects of examples 1-3: embodiment 1-3 provides semiconductor equipment front end processing apparatus, sweep the mechanism through setting up, can evenly sweep in the microenvironment provides the cavity, make the microenvironment provide and form in the cavity and sweep the air current microenvironment, thereby make the outside steam of microenvironment provides the cavity can't enter into the microenvironment and provide the cavity, and then make and enter into the remaining halogen gas in substrate surface in the microenvironment provides the cavity and compound can't take place condensation reaction with steam after the sculpture, thereby also can't form the condensation granule on the surface of substrate, consequently, the condensation granule has been avoided forming the corruption to spare part in the microenvironment provides the cavity, thereby the life of the inside spare part of microenvironment provision cavity has been prolonged, the while has still avoided the condensation granule to cause harmful effects to the substrate after the sculpture, the sculpture yield of substrate has been improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The front-end processing device of the semiconductor equipment is characterized by comprising a microenvironment providing chamber, a gas inlet and a purging mechanism, wherein the microenvironment providing chamber is used for providing a uniform gas flow environment for a substrate placed in the microenvironment providing chamber; the purging mechanism comprises a uniform flow cavity, the uniform flow cavity is a completely closed cavity, and an outlet of the uniform flow cavity is connected to the airflow inlet and used for providing uniform airflow for the microenvironment to input into the cavity;
wherein, microenvironment provides the cavity and can communicate with atmospheric environment, just the pressure that sweeps the air current is greater than the outside gas pressure of microenvironment provides the cavity, so that the outside steam of microenvironment provides the cavity can't enter into among the microenvironment provides the cavity, avoid remaining at the halogen gas and its compound and the steam on substrate surface take place condensation reaction.
2. The front-end processing apparatus for semiconductor devices as recited in claim 1, wherein a flow equalizing plate is further provided in the flow equalizing chamber, the flow equalizing plate being provided at an inlet of the flow equalizing chamber for uniformly diffusing the air flow supplied from the inlet of the flow equalizing chamber into the flow equalizing chamber.
3. The front end processing apparatus for semiconductor devices as claimed in claim 2, wherein the flow equalizing plate comprises a plate body and a plurality of through holes formed on the plate body, the through holes are identical in shape and size, and the through holes are uniformly distributed on the plate body.
4. The front-end processing device of semiconductor equipment as recited in claim 2, wherein the purging mechanism further comprises a pressure gauge and a pressure regulating valve, an output end of the pressure gauge is connected to an inlet of the flow equalizing chamber, and an input end of the pressure gauge is connected to an output end of the pressure regulating valve; the pressure regulating valve is used for regulating the pressure of the purging airflow input into the uniform flow cavity; the pressure gauge is used for displaying the regulation of the pressure regulating valve on the pressure of the purge gas flow.
5. The semiconductor device front-end processing apparatus according to claim 4, wherein the purge mechanism further comprises an on-off valve having one end connected to the pressure regulating valve and the other end connected to a supply source of a purge gas flow, the on-off valve being configured to open or close the supply source, the supply source being configured to supply an inert gas to the micro-environment supply chamber.
6. The semiconductor equipment front-end processing device according to claim 5, wherein the purging mechanism further comprises a water mist filter, an inlet of the water mist filter is connected to the supply source, and an outlet of the water mist filter is connected to the on-off valve; the water mist filter is used for filtering water vapor in the purge gas provided by the supply source.
7. The front-end processing device for semiconductor equipment as recited in claim 4, wherein the purging mechanism further comprises a mass flow meter, an input end of the mass flow meter is connected to an output end of the pressure gauge, an output end of the mass flow meter is connected to an inlet of the flow equalizing chamber, and the mass flow meter is used for controlling the flow of the purging gas flow input to the flow equalizing chamber.
8. The semiconductor device front-end processing apparatus according to claim 4, wherein the purging mechanism further comprises a flow restrictor, an input end of the flow restrictor is connected to an output end of the pressure gauge, an output end of the flow restrictor is connected to an inlet of the flow equalizing chamber, and the flow restrictor is used for controlling a flow rate of a purge gas flow input to the flow equalizing chamber.
9. The semiconductor device front end processing apparatus according to claim 1, wherein the flow equalizing chamber is made of stainless steel.
10. The front end processing device for semiconductor equipment as claimed in claim 1, wherein a fan is disposed in the mini-environment providing chamber, the fan is correspondingly disposed at the air inlet, and when the fan rotates, the pressure of the purge air flow inputted into the mini-environment providing chamber is greater than the pressure of the gas outside the mini-environment providing chamber.
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| CN112750717B (en) * | 2019-10-30 | 2022-12-02 | 夏泰鑫半导体(青岛)有限公司 | Front-end and rear-end module of equipment and semiconductor processing station with front-end and rear-end modules of equipment |
| CN111107324A (en) * | 2019-12-31 | 2020-05-05 | 上海陛通半导体能源科技股份有限公司 | Monitoring device and monitoring method of wafer transmission system |
| CN111524776B (en) * | 2020-04-30 | 2023-10-13 | 北京北方华创微电子装备有限公司 | Front-end module, control method thereof and semiconductor processing equipment |
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| JP4896899B2 (en) * | 2007-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | Substrate processing apparatus and particle adhesion preventing method |
| CN102074443B (en) * | 2009-11-19 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atmospheric transmission chamber and change method of inner airflow thereof and plasma processing equipment |
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