CN102074443B - Atmospheric transmission chamber and change method of inner airflow thereof and plasma processing equipment - Google Patents
Atmospheric transmission chamber and change method of inner airflow thereof and plasma processing equipment Download PDFInfo
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- CN102074443B CN102074443B CN 200910238402 CN200910238402A CN102074443B CN 102074443 B CN102074443 B CN 102074443B CN 200910238402 CN200910238402 CN 200910238402 CN 200910238402 A CN200910238402 A CN 200910238402A CN 102074443 B CN102074443 B CN 102074443B
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Abstract
The invention provides an atmospheric transmission chamber applied to plasma processing equipment, comprising a buffer and an atmospheric manipulator and the like component, and the side wall of a cavity which is corresponding to a wafer storing region of the buffer is equipped with a side wall negative pressure obtaining device, so as to generate a local airflow flown from the interior of the cavity to the exterior of the cavity on the point close to the buffer in the atmospheric transmission chamber and to timely discharge the fine particles from the position near the buffer. In addition, the invention also provided a method for changing local airflow within the atmospheric transmission chamber, and a plasma processing equipment by using the atmospheric transmission chamber and/or the method for changing local airflow within the atmospheric transmission chamber. The atmospheric transmission chamber, the method for changing local airflow within the atmospheric transmission chamber and the plasma processing equipment provided by the invention have the advantages that the particle pollution of wafers during the transmission process can be effectively reduced, and the process yield of the wafer is ensured.
Description
Technical field
The present invention relates to microelectronics technology, particularly, relate to a kind of propagation in atmosphere chamber, a kind of method that changes local air flow in the propagation in atmosphere chamber, and a kind of apparatus for processing plasma of using above-mentioned propagation in atmosphere chamber and/or changing the method for local air flow in the propagation in atmosphere chamber.
Background technology
In recent years, the semi-conductor industry development forms extensive and supermatic production model rapidly gradually.Along with the continuous lifting of the level of production, increase to 300mm by original 200mm such as the size of the processed device of wafer, simultaneously, have higher requirement to product quality and production efficiency in market.Therefore, manufacturing enterprise's production equipment and the technological level that must update and improve self could adapt to the new market demand.
At present, the technological means of commonly using for the machining of semiconductor device is the plasma processes such as etching and physics vapor phase deposition etc.And because above-mentioned technique is very high for the requirement of the cleanliness factor of processing chamber and vacuum degree, therefore, need to finish wafer or the transport process of substrate from the atmospheric environment to the processing chamber by a cover wafer transmission system.
See also Fig. 1 and Fig. 2, Fig. 1 is a kind of at present structure principle chart of wafer transmission system commonly used, and Fig. 2 is the sectional view of A-A section among Fig. 1.As shown in the figure, this wafer transmission system is comprised of propagation in atmosphere section and vacuum transmission section two parts.Wherein, propagation in atmosphere section specifically comprises: front end opening device 1, propagation in atmosphere chamber 2, the locator 8 that is arranged at the atmosphere manipulator 3 in the propagation in atmosphere chamber 2, two buffers 4 and is positioned at one of them buffer 4 below.Above-mentioned two buffers 4 are for the wafer of depositing wafer to be processed and having processed respectively, to avoid the cross pollution of two kinds of wafers.Connect and transition by vacuum lock 5 between vacuum transmission section and the propagation in atmosphere section, vacuum transmission section comprises vacuum transmission chamber 6 and the vacuum atmosphere manipulator (not shown) that is arranged in the vacuum transmission chamber 6.In addition, vacuum transmission chamber 6 has six symmetrical sides, and wherein two sides connect vacuum lock 5, and other four sides can be used for connecting processing chamber.
The transmission course of above-mentioned propagation in atmosphere chamber is as follows: at first, front end opening device 1 is opened the side door of wafer case (not shown), atmosphere manipulator 3 takes out a wafer and is sent to locator 8 from wafer case, 8 pairs of wafers of locator position and obtain the off-centring value of wafer; Afterwards, atmosphere manipulator 3 can temporarily leave wafer in the buffer 4 or with wafer sends into vacuum lock 5, thereby enters vacuum transmission section; Manipulator in the vacuum transmission chamber 6 will be arranged in the wafer taking-up of vacuum lock 5 and be sent to processing chamber and carry out corresponding treatment process.After technique was finished, the inverse process according to said process spread out of wafer (wafer no longer needs to position by locator in return course) again.
In above-mentioned wafer transmission process, can relate to multiple mechanical movement and with slight collision and friction, therefore will produce inevitably some molecules, these particles are easy to cause the wafer contamination in the near zone, and finally cause the circuit defect on the rear wafer of processing.In order in time above-mentioned particle to be discharged propagation in atmosphere section, usually above propagation in atmosphere chamber 2, dispose a fan filter 9, be set to be covered with simultaneously the structure of steam vent 7 in the bottom of propagation in atmosphere chamber 2.Fan filter 9 can filter to the gas of propagation in atmosphere chamber 2 outsides to remove the fine particle of micronic dust etc., then make gas at the downward uniform air flow of propagation in atmosphere chamber 2 interior formation, be a bit larger tham atmospheric malleation thereby produce one in chamber, last air-flow can be discharged along the steam vent 7 of propagation in atmosphere chamber 2 bottoms.Like this, the subparticle in the propagation in atmosphere section can be discharged from propagation in atmosphere chamber 2 under the drive of this air-flow, thereby reaches the purpose that reduces particle contamination.
Yet the air-flow that fan filter 9 produces at first can run into buffer 4 in top-down flow process, when air-flow is taken away near the molecules the buffer 4, self can be subject to the impact of buffer 4 and becomes and disperse.Because locator 8 is positioned at buffer 4 belows, the air-flow after dispersing obviously weakens the cleaning capacity of particulate, thereby impact is to the cleaning effect of locator 8; And, these disperse that air-flow also may be infected with locator 8 with the particulate of taking away at buffer 4 and the wafer that positioning on, the probability that these factors all will cause defect ware occurring increases.
Summary of the invention
For addressing the above problem, the invention provides a kind of propagation in atmosphere chamber, it can effectively reduce the particle contamination of wafer in transmission course, especially can reduce near wafer is subject to particle contamination buffer probability.
For addressing the above problem, the present invention also provides a kind of method that changes the local air flow in the propagation in atmosphere chamber, and it can effectively reduce the particle contamination of wafer in transmission course equally.
For addressing the above problem, the present invention also provides a kind of method of using above-mentioned propagation in atmosphere chamber and/or changing the local air flow in the propagation in atmosphere chamber, and has same advantage.
For this reason, the invention provides a kind of propagation in atmosphere chamber for apparatus for processing plasma, section is provided with atmosphere manipulator and at least one buffer within it, this propagation in atmosphere chamber also is provided with the sidewall negative pressure and obtains device, described sidewall negative pressure obtains the contiguous buffer of device and is positioned on the sidewall of propagation in atmosphere chamber, is used for producing from chamber interior the local air flow to the chamber flows outside near the buffer in the propagation in atmosphere chamber; The position of the air inlet of sidewall negative pressure acquisition device is corresponding with the buffer position.
Preferably, the setting position of the air inlet of sidewall negative pressure acquisition device is corresponding to the middle and lower part of buffer.Wherein, sidewall negative pressure acquisition device comprises fan and/or vacuum pump.
Wherein, in the propagation in atmosphere chamber interior and corresponding to the position that the sidewall negative pressure obtains the device air inlet cage is set, cage is connected with sidewall negative pressure acquisition device air inlet chamber sidewall on every side and forms partial cavity, and corresponding to the region division of depositing wafer in the buffer a plurality of through holes is arranged on cage.
Preferably, the quantity that the sidewall negative pressure obtains device equates with the quantity of buffer, and arranges correspondingly.
In addition, the present invention also provides a kind of method that changes local air flow in the propagation in atmosphere chamber, the inside of described propagation in atmosphere chamber is provided with atmosphere manipulator and at least one buffer, this method arranges sidewall negative pressure acquisition device by the position that the sidewall at described propagation in atmosphere chamber is close to described buffer, and the air inlet that described sidewall negative pressure obtains device is arranged on the chamber sidewall that corresponds to described buffer position, so that buffer and contiguous chamber sidewall position thereof form negative pressure, and near the air-flow the change buffer, and form from chamber interior the local air flow to the chamber flows outside near making buffer, thereby the wafer that guarantees buffer inside is clean.
Preferably, the air inlet that the sidewall negative pressure is obtained device is arranged on the chamber sidewall corresponding to the position, middle and lower part of buffer.Wherein, sidewall negative pressure acquisition device comprises fan and/or vacuum pump.
Wherein, by in the propagation in atmosphere chamber interior and corresponding to the position that the sidewall negative pressure obtains the device air inlet cage being set, chamber sidewall around making cage and the sidewall negative pressure obtaining the device air inlet is connected and forms partial cavity, and make the portion gas in the propagation in atmosphere chamber flow to the chamber outside via this partial cavity, form from chamber interior the local air flow to the chamber flows outside near the buffer thereby make, be provided with on the cage with buffer in deposit regional corresponding a plurality of through holes of wafer.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise vacuum transmission chamber, a plurality of processing chambers that link to each other with the vacuum transmission chamber, also comprise the propagation in atmosphere chamber that the invention described above provides, described propagation in atmosphere chamber is connected with the vacuum transmission chamber by vacuum lock, be used for importing wafer to be processed into the vacuum transmission chamber from atmosphere end, and pass manufactured wafer back atmosphere end from the vacuum transmission chamber.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise propagation in atmosphere chamber, vacuum transmission chamber, a plurality of processing chambers that link to each other with the vacuum transmission chamber, this plasma treatment facility adopts said method provided by the present invention to change the interior local air flow of propagation in atmosphere chamber, thereby makes the wafer in the propagation in atmosphere chamber keep clean.
The present invention has following beneficial effect:
Propagation in atmosphere chamber provided by the present invention, section is provided with the assemblies such as atmosphere manipulator and buffer within it, and is provided with sidewall negative pressure acquisition device in the chamber sidewall of contiguous buffer.Because obtaining device, this sidewall negative pressure can form from chamber interior the local air flow to the chamber flows outside at the near zone of buffer, thereby can in time the particulate in this zone be discharged transmission chamber, reduce the particle contamination that wafer is subject near buffer; Simultaneously, be subject to buffer impact and the air-flow of dispersing that becomes also will be discharged from transmission chamber along with this strand local air flow, thereby effectively reduce the locator of buffer below and the probability that the wafer on the locator is polluted; And, can in time be discharged chamber owing to disperse air-flow, this has just further guaranteed the steady of the whole air-flow of chamber.To sum up, propagation in atmosphere chamber provided by the invention can effectively reduce even avoid the particle contamination of wafer in the transferring wafer process, thereby finally improves the quality of products.
The method of local air flow in the change propagation in atmosphere chamber provided by the invention, the chamber sidewall position formation negative pressure that makes buffer and close on, this negative pressure forms from chamber interior the local air flow to the chamber flows outside near further making buffer.Like this, will be discharged in time chamber with above-mentioned local air flow at the subparticle of buffer near zone, thereby be reduced near the particle contamination of wafer buffer; Simultaneously, be subject to buffer impact and the air-flow of dispersing that becomes also will be discharged from chamber along with this strand local air flow, thereby effectively reduce the locator of buffer below and the probability that the wafer on the locator is polluted; And, can in time be discharged chamber owing to disperse air-flow, further guaranteed the steady of the whole air-flow of chamber.
Apparatus for processing plasma provided by the invention, owing to be provided with the propagation in atmosphere chamber that the invention described above provides and/or use the method for local air flow in the change propagation in atmosphere chamber that the invention described above provides, therefore, it can effectively reduce the particle contamination of wafer in transmission course equally, and guarantees the steady of the interior whole air-flow of chamber.
Description of drawings
Fig. 1 is a kind of at present structural representation of propagation in atmosphere chamber commonly used;
Fig. 2 is the generalized section of Fig. 1 middle section A-A;
Fig. 3 is the structural representation of an embodiment of propagation in atmosphere chamber provided by the invention;
Fig. 4 is the structural representation of the cage in the execution mode shown in Figure 3; And
Fig. 5 is the structural representation of second embodiment of propagation in atmosphere chamber provided by the invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing propagation in atmosphere chamber provided by the invention, the apparatus for processing plasma that changes the method for local air flow in the propagation in atmosphere chamber and use above-mentioned propagation in atmosphere chamber and/or method are described in detail.
See also Fig. 3, be the structural representation of a specific embodiment of propagation in atmosphere chamber provided by the invention.The top of this propagation in atmosphere chamber 2 is provided with fan filter 9, the bottom is covered with steam vent, is provided with atmosphere manipulator 3, buffer 4 and locator 8 in the inside of propagation in atmosphere chamber 2.This propagation in atmosphere chamber 2 also is connected with front end opening device (not shown) and vacuum lock 5.
Wherein, atmosphere manipulator 3 is used for finishing wafer moves and pick and place action between all parts.Buffer 4 is used for temporarily depositing wafer to be processed or the wafer that processes, and is provided with two buffers 4 in the present embodiment, the wafer that is respectively applied to deposit wafer to be processed and has finished processing, thus avoid the cross pollution of two kinds of wafers.The below of a buffer 4 arranges locator 8 therein, and it is used for wafer is positioned and determines the center offset of wafer.The front end opening device is the connecting wafer box simultaneously, and atmosphere manipulator 3 can enter the operation that wafer was got/put to wafer case by the front end opening device.Vacuum lock 5 is used for propagation in atmosphere chamber 2 is linked to each other with the vacuum transmission chamber, realizes the transition of wafer from propagation in atmosphere chamber 2 to the vacuum transmission chamber by vacuum lock 5.Fan filter 9 can filter the gas of propagation in atmosphere chamber 2 outsides, then filtered gas is sent into propagation in atmosphere chamber 2 inside, produce one and be a bit larger tham atmospheric malleation in chamber, the gas effect of can being stressed will finally be discharged along the steam vent of propagation in atmosphere chamber 2 bottom sections downwards always.Like this, the whole top-down uniform air flow of whole propagation in atmosphere chamber 2 interior formation, the flow velocity of this air-flow is between 0.4～0.8m/s, and the molecule in the chamber is in time discharged under the effect of this chamber air-flow, to avoid these particles the wafer that is transmitting is polluted.
In addition, be positioned at buffer 4 above the locator 8 near also be provided with the sidewall negative pressure and obtain device 10, the position of the air inlet of this sidewall negative pressure acquisition device 10 is corresponding with buffer 4 positions, particularly, it is corresponding with the roughly middle and lower part of buffer 4 to make the sidewall negative pressure obtain the setting position of air inlet of device 10.In actual applications, this sidewall negative pressure obtains device 10 such as can adopting the devices such as fan and/or vacuum pump, and fan or vacuum pump can be directly installed on the chamber sidewall corresponding with buffer 4; Also can first air inlet be installed on the chamber sidewall corresponding with buffer 4, then be connected to the devices such as fan and/or vacuum pump by pipeline.
In addition, propagation in atmosphere chamber 2 provided by the invention, be provided with cage 11 in the position that obtains device 10 air inlets corresponding to the sidewall negative pressure, this cage 11 is connected with sidewall negative pressure acquisition device 10 air inlets chamber sidewall on every side and forms partial cavity, and corresponding to the region division of depositing wafer in the buffer 4 a plurality of through holes is arranged on cage 11.In actual applications, the spacing of cage 11 and buffer can be arranged between 0～100mm, for example, can spacing be set to 10mm, 30mm, 50mm, 80mm etc., a spacing adjusting device perhaps also can be set, thereby according to actual needs above-mentioned spacing be adjusted at any time.
See also Fig. 4, be the structural representation of the cage 11 in the execution mode shown in Figure 3.Cage 11 in the present embodiment is the rectangle shell structure, its rectangular end face is corresponding to several the circular through holes of region division that are used for depositing wafer in the buffer 4, evenly distribute between each through hole, and the diameter of through hole can be selected in the scope of 1～4mm, such as: 2mm, 2.5mm, 3mm, 3.5mm etc. all can, the center distance of each adjacent through-holes should be less than 2 times of through-hole diameter.In actual applications, the shape of through hole can also adopt other shape except circular, for example adopts polygonal through hole, particularly, can be that regular polygon also can be irregular polygon, and the shape of each through hole also can be not quite identical.When adopting polygonal through hole, the center distance that requires adjacent through-holes is less than 2 times of polygon internal diameter (here, internal diameter can be understood as polygon inscribe diameter of a circle).Be the cleaning effect of assurance local air flow to particle, and avoid the whole air-flow in the chamber is exerted an influence, the air velocity of cage 11 through holes is remained in the scope of 0.4～2m/s.
Above-mentioned propagation in atmosphere chamber 2 is in the process of transferring wafer, in the chamber evenly downward whole air-flow through buffer 4 time, have dispersing to a certain degree, the air-flow after dispersing to the locator 8 of buffer 4 belows and on the cleaning effect of wafer certainly will be affected.At this moment, the sidewall negative pressure obtains device 10 and bleeds outside chamber by its air inlet, thereby form certain negative pressure in the partial cavity between air inlet and cage 11, because the through hole of cage 11 is directly corresponding with the near zone of buffer 4, so just force near buffer 4 air-flow through holes by cage 11 under the effect of pressure differential to enter the partial cavity that is formed by cage 11, and then be drawn out of propagation in atmosphere chamber 2.So, near buffer 4, formed the local lateral airflow to the chamber flows outside from chamber interior, near the molecule the buffer 4 and be subject to buffer 4 impacts and become the chamber air-flow of dispersing all will be along with above-mentioned lateral airflow together is discharged from propagation in atmosphere chamber 2.Like this, both play the effect of timely cleaning buffer near zone, be conducive to again the even running of the whole air-flow in the chamber.
It is to be noted, the position of the through hole on the cage 11 will determine the effective range of local air flow, and can more directly effectively act on the zone of depositing wafer in the buffer 4 in order to make the sidewall negative pressure obtain the lateral airflow that device 10 produces, should make through hole corresponding to arranging with lower area, that is: from the position of first wafer on the buffer 4 to the scope buffer 4 tops.If the distribution of through hole is less than this zone then can reduce the sphere of action of air-flow, can not useful effect in the easy Polluted area of whole buffer 4; And if the distribution of through hole exceeds this zone, the through hole that then exceeds part can be upset the air-flow of whole propagation in atmosphere section, thereby has a negative impact.
See also Fig. 5, be the structural representation of second embodiment of propagation in atmosphere chamber provided by the invention.Present embodiment and above-mentioned Fig. 3 and the first embodiment shown in Figure 4 are basically identical, and difference is that the quantity that the sidewall negative pressure obtains device 10 and cage 11 equates with the quantity of buffer 4, and correspondingly setting.Like this, the buffer 4 that utilizes a plurality of 10 pairs in devices of sidewall negative pressure acquisition to deposit undressed wafer all can carry out preferably air-flow control with the near zone of depositing the buffer 4 that processes wafer, thereby in the particle contamination that reduces undressed wafer, effectively reduce the particle contamination of processed wafer.In like manner, special-purpose sidewall negative pressure can also be set for other assembly such as locator 8 grades in the propagation in atmosphere chamber 2 obtain device 10 and cage 11, with the particle contamination of better reduction wafer in transmission course.
It is not unique with respect to the position of buffer to it is pointed out that above-mentioned sidewall negative pressure obtains device, and take register location structure shown in Figure 1 as example, this buffer is arranged on the propagation in atmosphere chamber near the position in corner.At this moment, the air inlet that the sidewall negative pressure can be obtained device is arranged on the chamber sidewall on any one side adjacent with the chamber corner, as long as the final lateral airflow that forms is corresponding to the zone of depositing wafer in the buffer.
It is pointed out that also above-mentioned sidewall negative pressure obtains device and is not limited in the propagation in atmosphere chamber and uses, other chamber and the system of its cleanliness factor that is equally applicable to have relatively high expectations.
In sum, propagation in atmosphere chamber provided by the invention obtains device owing to be provided with the sidewall negative pressure of the local lateral airflow that can produce from inside to outside near buffer.Therefore, it not only can effectively clear up the subparticle on the buffer, avoid polluting other assembly and the wafer of buffer below, and can also guarantee buffer below and other regional air-flow even running of transmission chamber, thereby effectively reduce the particle contamination of wafer in transmission course, improve the quality of products.
In addition, as another technical scheme, the present invention also provides a kind of method that changes local air flow in the propagation in atmosphere chamber.Here, be provided with the assemblies such as buffer and atmosphere manipulator in the propagation in atmosphere chamber.The method forms negative pressure by the chamber sidewall position that makes buffer and vicinity thereof, and forms from chamber interior the local air flow to the chamber flows outside near making buffer, and is clean with the wafer that guarantees buffer inside.Specifically comprise: in the position of the contiguous buffer of the sidewall of propagation in atmosphere chamber the sidewall negative pressure is set and obtains device, and the air inlet that described sidewall negative pressure obtains device is arranged on the chamber sidewall corresponding to the position, roughly middle and lower part of buffer; In addition, can also a cage be set in the position that obtains the device air inlet corresponding to the sidewall negative pressure, make cage and sidewall negative pressure obtain chamber sidewall around the device air inlet and be connected and form partial cavity, and on cage corresponding to a plurality of through holes of the region division of depositing wafer in the buffer.Here, the sidewall negative pressure obtains device specifically can adopt the devices such as fan and/or vacuum pump, and the sidewall negative pressure obtains that the sidewall negative pressure described in the propagation in atmosphere chamber that the structure of device and cage and operation principle all provide with the invention described above obtains device and cage is similar, so no longer detailed description.And based on the similar reason of propagation in atmosphere chamber that provides with the invention described above, the method for local air flow can effectively reduce the particle contamination of wafer in transmission course equally in the change propagation in atmosphere chamber provided by the invention, and finally improves the quality of products.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise vacuum transmission chamber, a plurality of processing chambers that link to each other with the vacuum transmission chamber, and comprise the propagation in atmosphere chamber that the invention described above provides, this propagation in atmosphere chamber is connected with the vacuum transmission chamber by vacuum lock, process for wafer to be processed is imported into the vacuum transmission chamber and then enters processing chamber from atmosphere end, and pass the wafer that processes back atmosphere end from processing chamber.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprise propagation in atmosphere chamber, vacuum transmission chamber, a plurality of processing chambers that link to each other with the vacuum transmission chamber, and the method for local air flow in the change propagation in atmosphere chamber that application the invention described above provides is in order to keep the cleaning in the propagation in atmosphere chamber.
The apparatus for processing plasma that the invention described above provides, owing to be provided with propagation in atmosphere chamber provided by the invention or used the method for local air flow in the change propagation in atmosphere chamber provided by the invention, thereby can effectively reduce the particle contamination of wafer in transmission course, and then obtain desirable product quality.
Be understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (14)
1. propagation in atmosphere chamber that is used for apparatus for processing plasma, section is provided with atmosphere manipulator and at least one buffer within it, it is characterized in that, described propagation in atmosphere chamber also is provided with the sidewall negative pressure and obtains device, described sidewall negative pressure obtains the contiguous described buffer of device and is positioned on the sidewall of described propagation in atmosphere chamber, is used for producing from chamber interior the local air flow to the chamber flows outside near the buffer in the propagation in atmosphere chamber; The position of the air inlet of sidewall negative pressure acquisition device is corresponding with described buffer position.
2. propagation in atmosphere chamber according to claim 1 is characterized in that, the setting position of the air inlet of described sidewall negative pressure acquisition device is corresponding to the middle and lower part of described buffer.
3. propagation in atmosphere chamber according to claim 1 is characterized in that, described sidewall negative pressure obtains device and comprises fan and/or vacuum pump.
4. propagation in atmosphere chamber according to claim 3, it is characterized in that, in described propagation in atmosphere chamber interior and corresponding to the position that the sidewall negative pressure obtains the device air inlet cage is set, described cage is connected with described sidewall negative pressure acquisition device air inlet chamber sidewall on every side and forms partial cavity, and corresponding to the region division of depositing wafer in the buffer a plurality of through holes is arranged on cage.
5. propagation in atmosphere chamber according to claim 4 is characterized in that, the spacing of described cage and described buffer is 0～100mm.
6. propagation in atmosphere chamber according to claim 4 is characterized in that, described through hole evenly distributes.
7. propagation in atmosphere chamber according to claim 6 is characterized in that, described through hole is circle or polygon, and round diameter or polygonal internal diameter are 1～4mm, and the center distance of adjacent through-holes is less than 2 times of diameter or internal diameter.
8. propagation in atmosphere chamber according to claim 7 is characterized in that, the quantity that described sidewall negative pressure obtains device equates with the quantity of buffer, and arranges correspondingly.
9. method that changes local air flow in the propagation in atmosphere chamber, the inside of described propagation in atmosphere chamber is provided with atmosphere manipulator and at least one buffer, it is characterized in that, the position that is close to described buffer by the sidewall at described propagation in atmosphere chamber arranges sidewall negative pressure acquisition device, and the air inlet that described sidewall negative pressure obtains device is arranged on the chamber sidewall that corresponds to described buffer position, so that buffer and contiguous chamber sidewall position thereof form negative pressure, and near the air-flow the change buffer, and form from chamber interior the local air flow to the chamber flows outside near making buffer, thereby the wafer that guarantees buffer inside is clean.
10. the method for local air flow in the change propagation in atmosphere chamber according to claim 9 is characterized in that, the air inlet that described sidewall negative pressure is obtained device is arranged on the chamber sidewall corresponding to the position, middle and lower part of buffer.
11. the method for local air flow is characterized in that in the change propagation in atmosphere chamber according to claim 10, described sidewall negative pressure obtains device and comprises fan and/or vacuum pump.
12. the method for local air flow in the change propagation in atmosphere chamber according to claim 11, it is characterized in that, by in described propagation in atmosphere chamber interior and corresponding to the position that the sidewall negative pressure obtains the device air inlet cage being set, chamber sidewall around making described cage and described sidewall negative pressure obtaining the device air inlet is connected and forms partial cavity, and make the portion gas in the propagation in atmosphere chamber flow to the chamber outside via this partial cavity, form from chamber interior the local air flow to the chamber flows outside near the buffer thereby make, be provided with on the described cage with buffer in deposit regional corresponding a plurality of through holes of wafer.
13. apparatus for processing plasma, comprise vacuum transmission chamber, a plurality of processing chambers that link to each other with the vacuum transmission chamber, it is characterized in that, also comprise such as the described propagation in atmosphere chamber of any one among the claim 1-8, described propagation in atmosphere chamber is connected with described vacuum transmission chamber by vacuum lock, be used for importing wafer to be processed into the vacuum transmission chamber from atmosphere end, and pass manufactured wafer back atmosphere end from the vacuum transmission chamber.
14. apparatus for processing plasma, comprise propagation in atmosphere chamber, vacuum transmission chamber, a plurality of processing chambers that link to each other with the vacuum transmission chamber, it is characterized in that, this plasma treatment facility adopts such as the described method of any one among the claim 9-12 and changes the interior local air flow of propagation in atmosphere chamber, thereby makes the wafer in the propagation in atmosphere chamber keep clean.
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| CN109979867B (en) * | 2017-12-27 | 2022-09-16 | 中微半导体设备(上海)股份有限公司 | Wafer transmission method |
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| CN1531048A (en) * | 2003-03-12 | 2004-09-22 | 精工爱普生株式会社 | Producing object connecting device and carrying system therewith |
| JP2005129483A (en) * | 2003-09-30 | 2005-05-19 | Shibaura Mechatronics Corp | Plasma treatment device |
| CN1851890A (en) * | 2005-12-08 | 2006-10-25 | 北京圆合电子技术有限责任公司 | Platform vacuum air-channel system with flow-control and controlling method |
| CN101477960A (en) * | 2008-01-03 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Transmission device and method for semiconductor wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1531048A (en) * | 2003-03-12 | 2004-09-22 | 精工爱普生株式会社 | Producing object connecting device and carrying system therewith |
| JP2005129483A (en) * | 2003-09-30 | 2005-05-19 | Shibaura Mechatronics Corp | Plasma treatment device |
| CN1851890A (en) * | 2005-12-08 | 2006-10-25 | 北京圆合电子技术有限责任公司 | Platform vacuum air-channel system with flow-control and controlling method |
| CN101477960A (en) * | 2008-01-03 | 2009-07-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Transmission device and method for semiconductor wafer |
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