CN1851890A - Platform vacuum air-channel system with flow-control and controlling method - Google Patents
Platform vacuum air-channel system with flow-control and controlling method Download PDFInfo
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Abstract
This invention relates to a vacuum gas circuit system and a control method for a process platform of semiconductor wafers, in which, the system includes a pumping system, a charge system, a load locked chamber, a transmission cavity, a membrane valve connected with the loading locked chamber and the transmission cavity and several flow controllers, the method includes: when an atmosphere manipulator is ready to put a wafer into the locked chamber, the membrane valve in the charge circuit is opened so as to charge N2 quickly into the chamber, when the pressure of the chamber is equal to the pressure in the atmosphere transmission unit, the first valve is opened and the pressure of the chamber is positive corresponding to the transmission unit due to the continuous blow of N2 and the manipulator puts the wafer into the chamber, at the pumping stage, the chamber is pumped and the first valve is opened when the vacuum degree in the chamber is balanced to that of the transmission cavity and the manipulator takes out the wafer to close the first valve.
Description
Technical field
The present invention relates to microelectronics technology, the platform vacuum air-channel system of semiconductor wafer processing particularly the invention still further relates to the control method of platform vacuum air-channel system.
Background technology
In semiconductor was made, the output capacity that improves system was the matter of utmost importance of system design always.Output capacity had the much relations except the process time with reaction chamber, and is also relevant with the design of the vacuum air-channel system of plateform system.In the processing procedure of semiconductor wafer, wafer in the brilliant box is taken out by the atmosphere manipulator in the propagation in atmosphere unit, valve open between this moment loadlock closed chamber and the propagation in atmosphere chamber, the mechanical handgrip wafer of atmosphere is put into the loadlock closed chamber then, so this valve closing.After loadlock closed chamber internal pressure is pressed onto high vacuum from atmosphere, valve open between itself and the transmission chamber, vacuum machine handgrip wafer in the transmission chamber takes out from the loadlock closed chamber then, put into each reaction chamber again and go to handle (etching for example, physical vapour deposition (PVD), chemical vapour deposition (CVD) etc.).After finishing each processing procedure, wafer turns back to brilliant box by above-mentioned path again.
Wafer processing process constitutes as shown in Figure 1, and wherein propagation in atmosphere unit 6, atmosphere manipulator 7, loadlock closed chamber 5, transmission chamber 4 and vacuum mechanical-arm 17 etc. constitute plateform system.In plateform system, propagation in atmosphere unit 6 pressure inside equal atmospheric pressure always, transmission chamber 4 internal pressures also remain on a fixing vacuum degree, and the pressure in the loadlock closed chamber 5 is changed between atmospheric pressure and high vacuum continually, so the vacuum air-channel processing of loadlock closed chamber 5 is directly had influence on the whole system production capacity.Because loadlock closed chamber 5 periodically experiences atmospheric pressure and high vacuum, wherein the probability of particle generation also increases greatly in addition.
Fig. 2 is the vacuum air-channel system of existing platform, generally includes the inflation and two systems 10,11 of bleeding.According to the needs of processing procedure, also comprise purification (Purge) system sometimes.In this vacuum air-channel system, the gas circuit of two loadlock closed chambers 5 and transmission chamber 4 all is divided into two gas circuits, and one the tunnel is to be used for the trickle charge nitrogen gas, and it comprises diaphragm valve 1 and choke valve 9, and another road is used for fast inflated with nitrogen, and it has only a diaphragm valve 2.When loadlock closed chamber 5 need change atmospheric environment into so that when communicating with propagation in atmosphere unit 6 from vacuum environment, at first to carry out trickle charge nitrogen to loadlock closed chamber 5, this moment, diaphragm valve 2 was closed, diaphragm valve 1 is opened, when reaching set point, loadlock closed chamber 5 internal pressure values (are generally 10～30Torr, this set point is read by vacuum gauge or vacuum switch) time diaphragm valve 1 closure, diaphragm valve 2 is opened, when the pressure of loadlock closed chamber chamber 5 reaches atmospheric pressure, diaphragm valve 2 closures, valve between loadlock closed chamber and the propagation in atmosphere unit just can be opened at this moment, then atmosphere manipulator 7 taking-ups wafer wherein.Pumping process and above-mentioned gas replenishment process are similar.
Because the inflation of prior art and bleed and be divided into two processes of speed, thereby the speed that makes the loadlock closed chamber circulate between atmosphere and high vacuum is slower, influences the production capacity of semiconductor machining system.The vacuum ports (being also referred to as interface) of existing in addition vacuum air-channel and inflation port are positioned at the bottom surface of loadlock closed chamber, so just can blow afloat indoor particle, and particle also descends slowly and lightly easily to upper wafer surface, directly influence wafer passing rate.
Another major defect of prior art is accurately to control the pressure in loadlock closed chamber and the transmission chamber
Summary of the invention
(1) technical problem that will solve
The purpose of this invention is to provide a kind of output capacity height, wafer contamination little, can control load locking chamber and the platform vacuum air-channel system with flow control of transmission chamber vacuum degree.Purpose of the present invention also provides the control method of the platform vacuum air-channel system with flow control.
(2) technical scheme
In order to achieve the above object, the present invention takes following scheme:
The platform vacuum air-channel system that the present invention has flow control comprises: extract system, gas charging system, loadlock closed chamber, transmission chamber, with the diaphragm valve that the loadlock closed chamber is connected with transmission chamber, in vacuum air-channel, also comprise several flow controllers.
Wherein, in gas charging system, be provided with several flow controllers.
Wherein, in extract system, be provided with several flow controllers.
Wherein, described flow controller is a mass flow controller.
Wherein, described flow controller is a pressure controller.
Wherein, the inflation port of described gas charging system is located on the loadlock closed chamber sidewall, and the suction port of extract system is located at the bottom of loadlock closed chamber.
Be used to have the control method of the platform vacuum air-channel system of flow control, comprise:
1) when the preparation of atmosphere manipulator was sent into the loadlock closed chamber to wafer, the diaphragm valve in the inflation gas circuit was opened, thereby charges into nitrogen gas fast in the loadlock closed chamber; When loadlock closed chamber internal pressure equaled propagation in atmosphere unit internal pressure, valve 1 was opened, and nitrogen continue to purge that to make load locking device be malleation with propagation in atmosphere unit relatively, and the mechanical handgrip wafer of atmosphere this moment is put into the loadlock closed chamber;
2) in the stage of bleeding, after valve 1 closure, inflation port also will be carried out the inflation of a period of time to wafer and be purged, in order to the particle and the moisture that may exist above the thorough expeling wafer; Then, the diaphragm valve of extract system was opened when gas charging system was closed, and the loadlock closed chamber is bled; After the balance of vacuum degree and transmission chamber in the loadlock closed chamber, valve 2 is opened, and vacuum mechanical-arm enters the loadlock closed chamber and takes out wafer, valve 2 closures then.
Wherein, comprise that also after valve 1 closure, inflation port is controlled at 0～0.5 second step to the inflation purge time of wafer.
(3) beneficial effect
1) owing to adopted flow controller, the vacuum degree of dynamic control load locking chamber of energy and transmission chamber; During 2) owing to inflation, inflation port constantly purges wafer always, therefore, has reduced the pollution of wafer surface; 3) owing to take the solution of the present invention, can shorten the time of inflating and bleeding, therefore, shortened the time that the pressure of loadlock closed chamber circulates between vacuum and atmosphere.
Description of drawings
Fig. 1 is a prior art semiconductor processing system structural representation;
Fig. 2 is a prior art platform vacuum air-channel system schematic diagram;
Fig. 3 is a platform vacuum air-channel system schematic diagram of the present invention;
Fig. 4 is the port organization schematic diagram of loadlock closed chamber of the present invention when having two wafer;
Fig. 5 is a plateform system structural representation of the present invention.
Among the figure: 1, diaphragm valve; 2, diaphragm valve; 3, reaction chamber; 4, transmission chamber; 5, loadlock closed chamber; 6, propagation in atmosphere unit; 7, atmosphere manipulator; 8, wafer case; 9, choke valve; 10, gas charging system; 11, extract system; MFC, flow controller; 12, inflation port; 13, wafer; 14, suction port; 15, first valve; 16, second valve; 17, vacuum mechanical-arm.
Embodiment
Following examples are used to illustrate the present invention, but are not used for limiting the scope of the invention.
As shown in Figure 2, vacuum air-channel of the present invention, bleed and gas charging system 10 in added mass flow controller MFC, in these systems, only adopt simultaneously and take out soon and fill vacuum air-channel soon.By this structure, can accurately control the pressure in loadlock closed chamber 5 and the transmission chamber 4.For polycrystalline silicon etching process, in its 300mm plateform system because loadlock closed chamber 5 volumes less (about 10L), so only adopting a dried pump usually bleeds, mass flow controller MFC in the vacuum air-channel of the present invention can control the flow of extract system and the flow of gas charging system, thereby realizes the dynamic control to vacuum degree in loadlock closed chamber 5 and the transmission chamber 4.As long as can satisfy the control needs, the various mass flow controllers of semicon industry can adopt.Flow controller among the present invention also available pressure controller replaces.
As shown in Figure 3, be an example of the present invention, its vacuum air-channel system is as shown in Figure 2.When loadlock closed chamber 5 carryings two wafer, inflation port 12 is arranged on its sidewall, suction port 14 is arranged on the bottom.To loadlock closed chamber 5 inflated with nitrogen gases the time, the nitrogen gas of dried and clean constantly purges the upper and lower surface of two wafer 13 like this, thereby stops the surface of particle aggregation at wafer 13.If carrying out controlling the flow of bleeding by flow controller MFC when nitrogen purges, flow to the weak gas flow of suction port 14 and particle is extracted out loadlock closed chamber 5 just can form one, thereby further reduce the pollution of particle wafer 13.
In order to realize that the loadlock closed chamber can circulate apace between atmosphere and vacuum, control method embodiment of the present invention comprises:
1, when the preparation of atmosphere manipulator was sent into loadlock closed chamber 5 to wafer 13, the diaphragm valve 1 in the inflation gas circuit was opened, thereby charges into nitrogen gas fast in loadlock closed chamber 5.When loadlock closed chamber 5 internal pressures equal propagation in atmosphere unit 6 internal pressures, being arranged on pressure switch on the loadlock closed chamber 5 or vacuum gauge just provides a signal and orders about first valve 15 and open, and nitrogen continuation purging makes the loadlock closed chamber, relative and propagation in atmosphere unit 6 is a malleation, and this moment, atmosphere manipulator 7 was put into loadlock closed chamber 5 to wafer 13.Because inflation port 12 constantly purges wafer 13, can stop particle deposition on wafer 13 always, and propagation in atmosphere unit 6 interior moistures enter loadlock closed chamber 5 and accumulate in wafer 13 tops after preventing valve open.Therefore can just carry out fast aeration always, thereby shorten its inflationtime loadlock closed chamber 5.
2, after atmosphere manipulator 7 is put into loadlock closed chamber 5 with wafer 13, first valve, 15 closures, this moment, the loadlock closed chamber 5 entered the stage of bleeding so that second valve 16 is opened, and allowed vacuum mechanical-arm 17 take out wafer 13 wherein and was sent to a reaction chamber 3.In the stage of bleeding, after first valve, 15 closures, inflation port 12 also will be carried out 0～0.5 second purging, the particle and the moisture that may exist in order to thorough expeling wafer 13 tops.Then, the diaphragm valve 1 of extract system 11 was opened when gas charging system 10 was closed, and loadlock closed chamber 5 is bled.Because particle and the moisture that may exist are positioned at the below of wafer, the condensing and only can fall the bottom surface of loadlock closed chamber 5 when falling and taken away of moisture in vacuum like this with aggregation of particles, and can not pollute wafer 13, so can remove in the stage of bleeding and to take out process slowly, bleed the time thereby shorten.After the balance of vacuum degree in the loadlock closed chamber 5 and transmission chamber 4, second valve 16 is opened, and vacuum mechanical-arm 17 enters loadlock closed chamber 5 and takes out wafer 13, second valve, 16 closures then.
Claims (8)
1, a kind of platform vacuum air-channel system with flow control, comprise extract system, gas charging system, loadlock closed chamber, transmission chamber, with the diaphragm valve that the loadlock closed chamber is connected with transmission chamber, it is characterized in that in vacuum air-channel, also comprising several flow controllers.
2, a kind of platform vacuum air-channel system with flow control as claimed in claim 1 is characterized in that: be provided with several flow controllers in gas charging system.
3, a kind of platform vacuum air-channel system with flow control as claimed in claim 1 or 2 is characterized in that: be provided with several flow controllers in extract system.
4, a kind of platform vacuum air-channel system with flow control as claimed in claim 1, it is characterized in that: described flow controller is a mass flow controller.
5, a kind of platform vacuum air-channel system with flow control as claimed in claim 1, it is characterized in that: described flow controller is a pressure controller.
6, a kind of platform vacuum air-channel system with flow control as claimed in claim 1 is characterized in that: the inflation port of described gas charging system is located on the loadlock closed chamber sidewall; The suction port of described extract system is located at the bottom of loadlock closed chamber.
7, be used for the described a kind of control method of claim 1, it is characterized in that with platform vacuum air-channel system of flow control:
1) when the preparation of atmosphere manipulator was sent into the loadlock closed chamber to wafer, the diaphragm valve in the inflation gas circuit was opened, thereby charges into nitrogen gas fast in the loadlock closed chamber; When loadlock closed chamber internal pressure equaled propagation in atmosphere unit internal pressure, valve 1 was opened, and nitrogen continue to purge that to make load locking device be malleation with propagation in atmosphere unit relatively, and the mechanical handgrip wafer of atmosphere this moment is put into the loadlock closed chamber;
2) in the stage of bleeding, after valve 1 closure, inflation port also will be carried out the inflation of a period of time to wafer and be purged, in order to the particle and the moisture that may exist above the thorough expeling wafer; Then, the diaphragm valve of extract system was opened when gas charging system was closed, and the loadlock closed chamber is bled; After the balance of vacuum degree and transmission chamber in the loadlock closed chamber, valve 2 is opened, and vacuum mechanical-arm enters the loadlock closed chamber and takes out wafer, valve 2 closures then.
8, a kind of control method with platform vacuum air-channel system of flow control as claimed in claim 7 is characterized in that: comprise that also after valve 1 closure, inflation port is controlled at 0～0.5 second step to the inflation purge time of wafer.
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| CNB2005101264012A CN100394574C (en) | 2005-12-08 | 2005-12-08 | Platform vacuum air-channel system with flow-control and controlling method |
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| CN101393844B (en) * | 2007-09-19 | 2011-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor machining system and method for protecting vacuum pressure sensitive elements thereof |
| CN102403250A (en) * | 2010-09-17 | 2012-04-04 | 中芯国际集成电路制造(上海)有限公司 | Pressure balance equipment of transmission module |
| CN102074443B (en) * | 2009-11-19 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atmospheric transmission chamber and change method of inner airflow thereof and plasma processing equipment |
| CN103579041A (en) * | 2012-07-24 | 2014-02-12 | 上海宏力半导体制造有限公司 | Vacuumizing device suitable for semiconductor equipment with a plurality of processing cavities |
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Effective date of registration: 20110311 Address after: 100015 No. 1 East Jiuxianqiao Road, Beijing, Chaoyang District Patentee after: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing Address before: 100016 Jiuxianqiao East Road, Beijing, No. 1, No. Patentee before: Beijing Yuanhe Electronic Technology Co., Ltd. |
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| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100015 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |