CN1855384A - Semiconductor machinery and method for decreasing exhaust pollution - Google Patents
Semiconductor machinery and method for decreasing exhaust pollution Download PDFInfo
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- CN1855384A CN1855384A CN 200510068912 CN200510068912A CN1855384A CN 1855384 A CN1855384 A CN 1855384A CN 200510068912 CN200510068912 CN 200510068912 CN 200510068912 A CN200510068912 A CN 200510068912A CN 1855384 A CN1855384 A CN 1855384A
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- vacuum
- brilliant boat
- boat loader
- reative cell
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Abstract
The invention comprises a reaction chamber, a wafer boat, a lock gate, an evacuating device and a control device. On the vacuum wafer boat, there is a vent hole, and the lock gate is located between the wafer boat and the reaction chamber. The evacuating device is coupled to the vent hole for use in extracting the mixing gas generated from the reaction between the residues on the wafer surface and the gas held in the wafer boat. The control device controls the opening time of the evacuating device.
Description
Technical field
The present invention relates to a kind of semiconductor machinery and method for decreasing exhaust pollution, particularly relate to a kind of etching machine and relevant method that reduces exhaust pollution of using the transformer coupled plasma technology.
Background technology
In semiconductor technology, etch process is used to certain material is removed on the wafer surface, and mode commonly used has wet etching (wet etch) and dry ecthing (dry etch).Dry ecthing is called plasma etching (plasma etch) again, is main etching media with gas, and provides energy of plasma by radio-frequency power supply, makes etching gas produce reactive materials, optionally removes the material on the wafer by this.Dry ecthing is a kind of anisotropic etching (anisotropic etching), and therefore the etch-rate of vertical direction can very accurately shift the pattern of being formulated by photoresist much larger than the etch-rate of side direction, and technology controlling and process is good than wet etching process.Therefore, dry ecthing then is the etching mode of normal use in the present semiconductor technology.
Dry etching process adopts the wafer isolation technology more now, be called SMIF (StandardMechanical Interface again, SMIF), comprise that wafer handling box, wafer handling arm, wafer add equipment such as carrier aircraft, inert gas filling machine and unit of cargo ID identification read module.Wafer transports from manufacturing to, all needs to carry out under airtight dustless condition, and the mode that tradition is produced wafer with dust free room is that production equipment is placed in the dust free room, and the notion of SMIF then is that dust free room directly is arranged in the production equipment.The dry etching process of general employing SMIF is that wafer is written into the brilliant boat loader of a vacuum (vacuum cassette elevator, VCE), after air pressure in brilliant boat loader of vacuum and the reative cell slightly is evacuated to certain vacuum respectively, open the gate between the brilliant boat loader of reative cell and vacuum, wafer is transferred to reative cell.Be evacuated to the required air pressure of technology according to the air pressure demand of different semiconductor technologies again with reative cell this moment.After reaching the required pressure of reaction, import reacting gas, power-on makes it free, begins wafer is reacted.After technology is finished, stop to supply gas and turning off power supply, reaction product is extracted out, open the gate between the brilliant boat loader of reative cell and vacuum.Wafer is transferred to the brilliant boat loader of vacuum from reative cell after, again with closing gate, send at last gas (being generally nitrogen) to the brilliant boat loader of vacuum to abolish vacuum, take out wafer.
When the dry etching process in the prior art finishes in reaction, when the gate of opening between the brilliant boat loader of reative cell and vacuum, on the wafer remaining reactive material easily and the air in the brilliant boat loader of vacuum produce chemical reaction once again, the material that is produced can pollution norms mechanical interface panel and vacuum crystalline substance boat loader.This kind produces exhaust (outgassing) pollution that two degree chemical reactions produce because of the air in reactive material remaining on the wafer and the brilliant boat loader of vacuum, the cleannes of the brilliant boat loader of mechanical interface panel and the vacuum of not only debasing the standard, more may pollute wafer surface, or and wafer produce unnecessary chemical reaction once again, and then influence technological quality.
Summary of the invention
Therefore, main purpose of the present invention promptly is to provide a kind of semiconductor machinery and method for decreasing exhaust pollution, to solve the problem of prior art.
The present invention discloses a kind of semiconductor technology machine that reduces exhaust pollution, and it comprises a reative cell, which is provided with one first pore, be used for the required gas of reaction is fed this reative cell, and one second pore, be used for discharging the gas in this reative cell; The brilliant boat loader of one vacuum is coupled in this reative cell, and the brilliant boat loader of this vacuum is provided with a steam vent, is used for discharging the gas in the brilliant boat loader of this vacuum; One gate is located between the brilliant boat loader of this vacuum and this reative cell; One first air extractor, be coupled in the steam vent of the brilliant boat loader of this vacuum, be used for through because the steam vent of the brilliant boat loader of this vacuum, extract the gas that is produced after reaction residue on the wafer surface in this reative cell and the gas reaction in the brilliant boat loader of this vacuum out; And a control device, be used for controlling opening time of this gate and this first air extractor.
The present invention also discloses a kind of method that reduces the semiconductor technology of exhaust pollution, before it is included in the interior wafer reaction of a reative cell, the brilliant boat loader of vacuum internal gas pressure is evacuated to the air pressure of the pressure that meets this reative cell; The gas that reacts wafer required inputs to this reative cell; The gate between this reative cell and the brilliant boat loader of a vacuum is located in unlatching; And, extract the gas that is produced after reaction residue on the wafer surface in this reative cell and the gas reaction in the brilliant boat loader of this vacuum out via the steam vent of the brilliant boat loader of this vacuum.
Description of drawings
Fig. 1 is the schematic diagram of semiconductor technology machine among the present invention.
Fig. 2 is the enlarged diagram of the brilliant boat loader of vacuum among Fig. 1.
Fig. 3 is the brilliant boat loader of vacuum and first air extractor among Fig. 2, the schematic diagram of second air extractor and pump-up device.
Fig. 4 is the flow chart of semiconductor machine of the present invention when operation.
The simple symbol explanation
10 conductor technology machines, 11 reative cells
32 control device, 33 steam vents
36 pump-up devices
12,22 gates
14,24 pores
16,26 air extractors
The brilliant boat loader of 20,30 vacuum
Embodiment
Please refer to Fig. 1, Fig. 1 is the schematic diagram of semiconductor technology machine 10 among the present invention.Semiconductor technology machine 10 comprises the brilliant boat loader of a reative cell 11, two vacuum (vacuum cassette elevator, VCE) 20 and 30, and one control device 32.Reative cell 11 is provided with one first pore 14 and one second pore 24, sees through the gas that first pore 14 can be required with reaction and feeds in the reative cell 11, can discharge gas in the reative cell 11 and see through second pore 24.The brilliant boat loader 20 and 30 of vacuum is coupled in reative cell 11, and wafer loads reative cell 11 to react by the brilliant boat loader 20 of vacuum and 30.Because most of semiconductor technology machine all comprises the brilliant boat loader of two vacuum, so present embodiment will be done explanation at the brilliant boat loader 20 of vacuum, the brilliant boat loader of vacuum 30 structures are the same with the brilliant boat loader 20 of vacuum, do not add in addition at this and give unnecessary details.
Please refer to Fig. 2, Fig. 2 is the enlarged diagram of the brilliant boat loader 20 of vacuum.The brilliant boat loader 20 of the vacuum of Fig. 2 comprises one first gate, 12, one second gates 22, and a steam vent 33.First gate 12 is located between brilliant boat loader 20 of vacuum and the reative cell 11, and opening first gate 12 can be written into wafer in the reative cell 11 by the brilliant boat loader 20 of vacuum.Second gate 22 is located between brilliant boat loader 20 of vacuum and the external environment, and opening second gate 22 can be written into wafer in the brilliant boat loader 20 of vacuum by the external world.Steam vent 33 is located on the brilliant boat loader 20 of vacuum, is coupled in one first air extractor 16.The unlatching of first air extractor 16 and first gate 12 is controlled by the control device among Fig. 1 32.
Please refer to Fig. 3, Fig. 3 is the schematic diagram of the brilliant boat loader 20 of vacuum and first air extractor, 16, one second air extractors 26 and a pump-up device 36.First air extractor 16 is coupled in the steam vent 33 among Fig. 2, controls the unlatching of first air extractor 16 by control device 32, when first air extractor 16 is opened, can extract gas in the brilliant boat loaders 20 of vacuum out via steam vent 33.Second air extractor 26 and pump-up device 36 are coupled in the brilliant boat loader 20 of vacuum, are used for controlling the air pressure in the brilliant boat loader 20 of vacuum.Before the wafer reaction in reative cell 11, second air extractor 26 is evacuated to the certain vacuum degree with the brilliant boat loader of vacuum 20 internal gas pressures, to meet the air pressure of reative cell 11 before reaction.After technology finishes, see through pump-up device 36 and send into gas, make the brilliant boat loader 20 of vacuum reach a predetermined pressure to abolish vacuum, take out wafer.First air extractor 16 can be an isolating valve (isolation valve), and second air extractor 26 can be a dry vacuum pump (dry pump), and pump-up device 36 can input to nitrogen within the brilliant boat loader 20 of vacuum.
The embodiment of the invention shown in Fig. 1 to Fig. 3 is application transformer coupled plasma (transformer coupled plasma, TCP) etching machine of technology.The etching machine of using the transformer coupled plasma technology is a high-density plasma (high density plasma, HDP) etching machine, under the environment of low operating voltage, provide high-density plasma, reacting gas can be separated liftoff more complete, so fast and complete than the chemical reaction velocity of traditional plasma technology.But the present invention is not limited to the etching machine of an application transformer coupled plasma technology, every when after technological reaction is finished, opening first gate 12, can be because of the semiconductor machine of two degree reaction pollution norms mechanical interface panels and the brilliant boat loader of vacuum, all can become embodiments of the invention, it also belongs to category of the present invention.
Illustrate further the method that can reduce the semiconductor technology of exhaust pollution among the present invention at this: semiconductor technology machine 10 is when running, at first can open second gate 22 loads wafer in the brilliant boat loader 20 of vacuum, close second gate, 22 backs and open second air extractor 26, the brilliant boat loader of vacuum 20 internal gas pressures are evacuated to the certain vacuum degree, to meet the air pressure of reative cell 11 before reaction.After negative crystal boat loader 20 internal gas pressures of taking seriously reach the certain vacuum degree, open first gate 12 and wafer is loaded in the reative cell 11.Wafer is closed first gate 12 after loading and finishing, the demand of looking different process, and the vacuum degree with reative cell 11 improves again.When reative cell 11 reaches the pressure that reacts required, see through first pore 14 and feed the required gas of reaction, power-on is free with reacting gas, extracts reacted gas out reative cell 11 through second pore 24 simultaneously.Stop to supply gas and powered-down after reaction is finished, open first gate 12 and first air extractor 16 simultaneously by control device 32.Because wafer surface finishes the remaining reactive material in back in technology, first gate 12 open the back easily and the air in the brilliant boat loader 20 of vacuum produce two degree chemical reactions once again, the material that is produced meeting pollution norms mechanical interface panel and vacuum crystalline substance boat loader 20.The present invention sees through steam vent 33 the two degree materials that chemical reaction produced is detached the brilliant boat loader 20 of vacuum at this moment by first air extractor 16, pollutes to reduce technology.At last, see through pump-up device 36 and send into gas (being generally nitrogen), make the brilliant boat loader 20 of vacuum reach a predetermined pressure (being generally atmospheric pressure), take out wafer to abolish vacuum.
Please refer to Fig. 4, Fig. 4 is the flow chart of semiconductor machine 10 of the present invention when operation.The flow chart of Fig. 4 comprises the following steps:
Step 400: open second gate 22;
Step 410: wafer is written in the brilliant boat loader 20 of vacuum;
Step 420: close second gate 22;
Step 430: open second air extractor 26;
Step 440: open first gate 12;
Step 450: wafer is written in the reative cell 11;
Step 460: the gas that reacts wafer required through first pore 14 inputs to reative cell 11, and power-on is to carry out reaction;
Step 470: open first gate 12 and first air extractor 16, via the gas that is produced after reaction residue on the wafer surface in the steam vent 33 extraction reative cells 11 and the gas reaction in the brilliant boat loader 20 of vacuum;
Step 480: close first gate 12;
Step 490: see through pump-up device 36 and send into gas to the brilliant boat loader 20 of vacuum; And
Step 500: take out wafer.
In the step 470 of flow chart shown in Figure 4, first gate 12 and first air extractor 16 are controlled its opening time by control device 32.In this embodiment of the present invention, first gate 12 and first air extractor 16 are opened simultaneously, but method of the present invention is not limited to open simultaneously first gate 12 and first air extractor 16.After reative cell 11 reactions finished, the present invention also can open first air extractor 16 earlier, opens first gate 12 again; Or after opening first gate 12, open first air extractor 16 immediately.All technological reactions in reative cell 11 finish the back and open first air extractor 16, to extract the method for the gas that is produced after reaction residue on the wafer surface in the reative cell 11 and the gas reaction in the brilliant boat loader 20 of vacuum out, it all belongs to category of the present invention.
The present invention shown in Fig. 4 reduces the method for exhaust pollution, and (hydrogen bromide HBr) is the conductor etching technology of reacting gas to can be applicable to an employing hydrogen bromide.Because the hydrogen bromide that residues on the wafer surface very easily with the brilliant boat loader 20 interior air of vacuum two degree reactions takes place, and produces the material of pollution norms mechanical interface panel and vacuum crystalline substance boat loader 20, the present invention can solve the situation of this kind exhaust pollution effectively.But it is the semiconductor technology of reacting gas that the present invention is not limited to adopt hydrogen bromide, all employing meetings are reacted and the semiconductor technology of formation polluter with the gas generation in the brilliant boat loader 20 of vacuum, all can reduce exhaust pollution by the present invention, it also belongs to category of the present invention.
Semiconductor technology in the prior art is after reaction finishes, when the gate of opening between the brilliant boat loader of reative cell and vacuum, on the wafer remaining reactive material easily and the air in the brilliant boat loader of vacuum produce chemical reaction once again, the material that is produced can pollution norms mechanical interface panel and vacuum crystalline substance boat loader.This kind produces the exhaust pollution that two degree chemical reactions produce because of the air in reactive material remaining on the wafer and the brilliant boat loader of vacuum, the cleannes of the brilliant boat loader of mechanical interface panel and the vacuum of not only debasing the standard, more may pollute wafer surface, or and wafer produce unnecessary chemical reaction once again, and then influence technological quality.Compared to prior art, the present invention uses the unlatching of control device 32 control first air extractors 16 and first gate 12, see through the steam vent 33 in the brilliant boat loader 20 of vacuum, the two degree chemical reaction produced pollution can be discharged outside the brilliant boat loader 20 of vacuum, significantly improve the quality of semiconductor technology.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (15)
1, a kind of semiconductor technology machine that reduces exhaust pollution, it comprises:
One reative cell which is provided with one first pore, is used for the required gas of reaction is fed this reative cell, and one second pore, be used for discharging the gas in this reative cell;
(vacuum cassette elevator VCE), is coupled in this reative cell to the brilliant boat loader of one vacuum, and the brilliant boat loader of this vacuum is provided with a steam vent, is used for discharging the gas in the brilliant boat loader of this vacuum;
One gate is located between the brilliant boat loader of this vacuum and this reative cell;
One first air extractor, be coupled in the steam vent of the brilliant boat loader of this vacuum, be used for through because the steam vent of the brilliant boat loader of this vacuum, extract the gas that is produced after reaction residue on the wafer surface in this reative cell and the gas reaction in the brilliant boat loader of this vacuum out; And
One control device is used for controlling opening time of this gate and this first air extractor.
2, machine as claimed in claim 1, wherein this first air extractor is an isolating valve (isolationvalve).
3, machine as claimed in claim 1, it also comprises one second air extractor, is coupled in the brilliant boat loader of this vacuum, is used for before the wafer reaction in this reative cell, the brilliant boat loader of this vacuum internal gas pressure is evacuated to the air pressure of the pressure that meets this reative cell.
4, machine as claimed in claim 3, wherein this second air extractor is a dry vacuum pump (drypump).
5, machine as claimed in claim 1, it also comprises a pump-up device, is coupled in the brilliant boat loader of this vacuum, is used for gas is sent within the brilliant boat loader of this vacuum, makes the brilliant boat loader of this vacuum reach a predetermined pressure.
6, machine as claimed in claim 5, wherein this pump-up device is sent into nitrogen within the brilliant boat loader of this vacuum.
7, machine as claimed in claim 1, it is for using transformer coupled plasma (transformercoupled plasma, TCP) etching machine of technology.
8, machine as claimed in claim 1, wherein have in this reative cell hydrogen bromide (hydrogenbromide, HBr).
9, a kind of method that reduces the semiconductor technology of exhaust pollution, it comprises the following steps:
(a) before the reaction of the wafer in a reative cell, the brilliant boat loader of vacuum internal gas pressure is evacuated to the air pressure of the pressure that meets this reative cell;
(b) gas that reacts wafer required inputs to this reative cell;
(c) open the gate of being located between this reative cell and the brilliant boat loader of a vacuum; And
(d), extract the gas that is produced after reaction residue on the wafer surface in this reative cell and the gas reaction in the brilliant boat loader of this vacuum out via the steam vent of the brilliant boat loader of this vacuum.
10, method as claimed in claim 9, wherein step (c) reaches and (d) begins simultaneously to carry out.
11, method as claimed in claim 9, wherein step (c) reaches and (d) carries out afterwards in step (b).
12, method as claimed in claim 9, it also comprises step (e): in execution in step (d) afterwards, gas is imported within the brilliant boat loader of this vacuum, made the brilliant boat loader of this vacuum reach a predetermined pressure.
13, method as claimed in claim 12, wherein step (e) is in execution in step (d) afterwards, and nitrogen is imported within the brilliant boat loader of this vacuum, makes the brilliant boat loader of this vacuum reach a predetermined pressure.
14, method as claimed in claim 9, wherein step (b) is for to import this reative cell with hydrogen bromide.
15, method as claimed in claim 9, it is used for the etch process of semiconductor technology.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510068912 CN1855384A (en) | 2005-04-27 | 2005-04-27 | Semiconductor machinery and method for decreasing exhaust pollution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510068912 CN1855384A (en) | 2005-04-27 | 2005-04-27 | Semiconductor machinery and method for decreasing exhaust pollution |
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| Publication Number | Publication Date |
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| CN1855384A true CN1855384A (en) | 2006-11-01 |
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| CN 200510068912 Pending CN1855384A (en) | 2005-04-27 | 2005-04-27 | Semiconductor machinery and method for decreasing exhaust pollution |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347207A (en) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | System for plasma process |
| CN103243308A (en) * | 2012-02-10 | 2013-08-14 | 无锡华润上华科技有限公司 | Air extractor, low-pressure chemical vapor deposition equipment and chemical vapor deposition method |
| CN109560010A (en) * | 2017-09-26 | 2019-04-02 | 株式会社国际电气 | Substrate board treatment, the manufacturing method of semiconductor device and storage medium |
| CN111577913A (en) * | 2020-05-18 | 2020-08-25 | 中国科学院微电子研究所 | Semiconductor process equipment, isolation valve and control method |
-
2005
- 2005-04-27 CN CN 200510068912 patent/CN1855384A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347207A (en) * | 2010-07-29 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | System for plasma process |
| CN103243308A (en) * | 2012-02-10 | 2013-08-14 | 无锡华润上华科技有限公司 | Air extractor, low-pressure chemical vapor deposition equipment and chemical vapor deposition method |
| CN103243308B (en) * | 2012-02-10 | 2015-11-25 | 无锡华润上华科技有限公司 | Air extractor, low pressure chemical vapor deposition equipment and chemical gaseous phase depositing process |
| CN109560010A (en) * | 2017-09-26 | 2019-04-02 | 株式会社国际电气 | Substrate board treatment, the manufacturing method of semiconductor device and storage medium |
| CN109560010B (en) * | 2017-09-26 | 2022-12-16 | 株式会社国际电气 | Substrate processing apparatus, method of manufacturing semiconductor device, and storage medium |
| CN111577913A (en) * | 2020-05-18 | 2020-08-25 | 中国科学院微电子研究所 | Semiconductor process equipment, isolation valve and control method |
| CN111577913B (en) * | 2020-05-18 | 2022-07-12 | 中国科学院微电子研究所 | Semiconductor process equipment, isolation valve and control method |
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