CN103854943A - Confinement ring and chamber cleaning method applicable to plasma processing chamber - Google Patents
Confinement ring and chamber cleaning method applicable to plasma processing chamber Download PDFInfo
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- CN103854943A CN103854943A CN201210506470.6A CN201210506470A CN103854943A CN 103854943 A CN103854943 A CN 103854943A CN 201210506470 A CN201210506470 A CN 201210506470A CN 103854943 A CN103854943 A CN 103854943A
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Abstract
The invention provides a confinement ring and chamber cleaning method applicable to a plasma processing chamber. The confinement ring is mobile; and opening is formed between a base and the confinement ring, such that, plasmas used for cleaning can enter a gas exhaust region through the opening. With the chamber cleaning method of the invention adopted, polymer pollution produced below the confinement ring can be effectively cleaned.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of confinement ring for plasma process chamber and chamber clean method.
Background technology
Plasma processing apparatus utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, to pass into the reacting gas that contains suitable etching agent or deposit source gas, and then this vacuum reaction chamber is carried out to radio-frequency (RF) energy input, with activated reactive gas, light and maintain plasma, so that respectively the material layer on etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat are processed.
Plasma is diffusible, although most of plasma is known from experience in the processing region resting between pair of electrodes, part plasma may be full of whole operating room.For instance, plasma may be full of the region of the processing region outside of vacuum reaction chamber below.If plasma arrives these regions, may there is burn into deposit or erosion in these regions thereupon, this can cause the particle of reative cell inside to stain, and then reduces the repeat performance of plasma treatment appts, and may shorten the working life of reative cell or reative cell parts.If not by plasma confinement in certain working region, charged particle will clash into not protected region, and then cause surface of semiconductor chip impurity and pollution.
Thus, generally also in plasma processing apparatus, be provided with in the industry confinement ring (confinement ring), in order to control the discharge of the reacting gas use and in the time that the charged particle in reacting gas passes through this confinement ring by they charge neutrality, thereby electric discharge is constrained in processing region substantially, with the cavity pollution problem that prevents from may causing in plasma treatment appts use procedure.
For example, in inductance coupling high type plasma treatment chamber, one normally the antenna of coiled type for launching radio-frequency (RF) energy in reaction chamber.But, in some processing procedures of inductance coupling high type plasma process chamber, for example Bosch processing procedure, polymer still can produce below confinement ring, and such as the free radical such as CxFy or CxHyFz can enter cavity bottom by confinement ring, pollutes thereby produce.
These do not wish that the deposit occurring gathers meeting and produces and adhere to aggregation in reaction chamber, such as powder, impurity etc., and may peel off and come from attaching surface, along with air-flow diffusion everywhere in reaction chamber of reacting gas, finally can drop on processed substrate, and cause substrate to produce defect or inefficacy, also can cause the pollution of reaction chamber simultaneously, and processing quality is next time produced to bad impact.Thereby, after making technology after a while, must stop processing procedure, the aggregation that adheres to that reaction chamber cleaning course of specially for carrying out is attached to these on air transporting arrangement is disposed.Described cleaning course comprises specially and passes into a clean air to chamber interior, and excites this clean air to produce cleaning plasma, to utilize these gas ions to clean the pollution of chamber.But, due in the prior art, the bottom of plasma process chamber is sealed, this is because confinement ring is to be generally fixed between chamber sidewall and board by fixed forms such as screws, therefore, even if carry out plot processing procedure, plasma is because the restriction of confinement ring also cannot enter bottom, thereby cannot clean polymer wherein.
If bottom (region below confinement ring) that must plasma treatment chamber is cleaned, so just need to, by whole board dismounting, unclamp the screw of fixed constraint ring and board and chamber inner wall, then adopt artificial mode to carry out.But plasma processor platform must keep the environment of vacuum in processing procedure, repeatedly dismantles board and can bring impact to the internal environment of board, even introduces other unnecessary pollutions.
Therefore, need in the industry a kind of clean mechanism, effectively the region below the confinement ring of cleaning chamber bottom.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of confinement ring for plasma process chamber and chamber clean method.
First aspect present invention provides a kind of confinement ring for plasma process chamber, wherein, described plasma process chamber comprises plasma processing region and exhaust gas region, described confinement ring is between the plasma processing region and exhaust gas region of described plasma treatment chamber, there are multiple gas passages, be provided with a pedestal in the bottom of described plasma process chamber, described confinement ring is for movably, can produce an opening between described pedestal and described confinement ring, make Clean-plasma to enter described exhaust gas region by this opening, wherein, described plasma process chamber also comprises a drive unit, described drive unit is used for driving described confinement ring to move.
Further, described pedestal periphery and described chamber inner wall below the electrostatic chuck of described pedestal are respectively arranged with the first bracing or strutting arrangement and the second bracing or strutting arrangement, and the first end of described confinement ring contacts with the second bracing or strutting arrangement with the first bracing or strutting arrangement respectively with the second end.
Further, described confinement ring comprises several separable fan-shaped subrings, and described subring can upwards start take its second end near described chamber sidewall as fulcrum respectively.
Further, described subring can upwards start respectively 0 ~ 90 degree take its second end near described chamber sidewall as fulcrum.
Further, described second end of described confinement ring is fixed on described the second bracing or strutting arrangement.
Further, described drive unit comprises the first drive unit, and wherein, described in several, subring is also connected with respectively one first drive unit, and it is respectively used to drive described subring upwards to start take its second end near described chamber sidewall as fulcrum.
Further, described confinement ring can move up and down with respect to described pedestal.
Further, the as many as of described confinement ring can move up and down with respect to described pedestal distance reaches the lower surface of the air injector of described chamber top.
Further, described drive unit comprises the second drive unit, wherein, described confinement ring below is also provided with a mobile device for structure in the form of a ring, be connected with at least one second drive unit at described mobile device, it is for driving described mobile device to move up and down to drive described confinement ring to move up and down with respect to described pedestal.
Further, described the second drive unit comprises cylinder or stepper motor.
Further, described drive unit comprises the second drive unit, and described confinement ring is connected with several the second drive units, and described the second drive unit is common drives described confinement ring to move up and down with respect to described pedestal.
Further, described the second drive unit comprises cylinder or stepper motor.
Second aspect present invention provides a kind of clean method of plasma process chamber, and wherein, described plasma process chamber comprises the confinement ring described in first aspect present invention, and wherein, described clean method comprises the steps:
Step (a), provides clean air to chamber interior, and excitation cleaning γ-ray emission plasma;
Step (b), mobile described confinement ring, to produce an opening between described pedestal and described confinement ring, makes Clean-plasma to enter described exhaust gas region by this opening;
Step (c), utilizes the vacuum pump of described plasma process chamber will clean beyond redundancy discharge chamber.
Further, described clean air comprises O
2and CF
4.
Further, described step (b) also comprises, move up and down described confinement ring with respect to described pedestal, to produce an opening between described pedestal and described confinement ring, make Clean-plasma to enter described exhaust gas region by this opening.
Further, described confinement ring comprises several separable fan-shaped subrings, wherein, described step (b) also comprises, respectively described subring is upwards started to 0 ~ 90 degree take its second end near described chamber sidewall as fulcrum, to produce an opening between described pedestal and described confinement ring, make Clean-plasma to enter described exhaust gas region by this opening.
Plasma process chamber of the present invention provides movably confinement ring, it can provide an opening between confinement ring and board, to make Clean-plasma can enter by this opening the exhaust port of chamber, thereby the polymer that is deposited on base station sidewall and chamber sidewall etc. in processing procedure process is effectively cleaned.
Accompanying drawing explanation
Fig. 1 is the structural representation of the plasma process chamber of prior art;
Fig. 2 is according to the structural representation of the plasma process chamber of a specific embodiment of the present invention;
Fig. 3 is according to the structural representation of the confinement ring of the plasma process chamber of a specific embodiment of the present invention;
Fig. 4 is the schematic diagram starting according to the confinement ring of the plasma process chamber of a specific embodiment of the present invention;
Fig. 5 is the structural representation of the plasma process chamber of another specific embodiment according to the present invention;
Fig. 6 is the schematic diagram that the confinement ring of the plasma process chamber of another specific embodiment according to the present invention moves up and down.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of the plasma process chamber of prior art, and wherein, described plasma treatment chamber is inductance coupling high type plasma treatment chamber typically, and further, it is inductance coupling high type plasma etch chamber chamber especially.As shown in Figure 1, inductance coupling high type plasma etch chamber chamber 100 comprises a chamber 102, and its top is provided with an insulated window, is provided with some radio-frequency antennas 106 on insulated window.Be provided with a pedestal 108 in chamber bottom, above pedestal, be provided with the electrostatic chuck 110 for clamping substrate.Region between chamber roof and pedestal 108 is process zone P1.Between pedestal 108 and chamber sidewall, be provided with confinement ring 112, the region in confinement ring below 112 is exhaust gas region S1.But, in some processing procedures of inductance coupling high type plasma process chamber, for example Bosch processing procedure, polymer still can produce below confinement ring 112, such as the free radical such as CxFy or CxHyFz can enter cavity bottom by the space of confinement ring 112, pollutes thereby produce.
As shown in Figure 1, the polymer that processing procedure produces is generally deposited on the surperficial 108a of base station 108, and on chamber sidewall 102a.But in the prior art, confinement ring 112 is generally fixedly connected on chamber sidewall by screw etc., therefore above-mentioned polymer pollutes and is generally difficult to cleaning.If cleaning can only be unclamped the screw between fixed constraint ring 112 and chamber.
In order to solve the above-mentioned defect of prior art, the present invention is proposed.
First aspect present invention provides a kind of confinement ring for plasma process chamber, wherein, described plasma process chamber comprises plasma processing region and exhaust gas region, described confinement ring is between the plasma processing region and exhaust gas region of described plasma treatment chamber, having multiple gas passages makes to cross when described plasma bounded chamber enters exhaust gas region and be neutralized from the gas flow of process zone, be provided with a pedestal in the bottom of described plasma process chamber, wherein, described confinement ring is for movably, can produce an opening between described pedestal and described confinement ring, make Clean-plasma to enter described exhaust gas region by this opening, wherein, described plasma process chamber also comprises a drive unit, described drive unit is used for driving described confinement ring to move.
Wherein, described plasma treatment chamber is inductance coupling high type plasma treatment chamber typically, and further, it is inductance coupling high type plasma etch chamber chamber especially.
Although it will be appreciated by those skilled in the art that present invention is described in connection with inductance coupling high type plasma etch chamber chamber herein, the invention is not restricted to this, the present invention also can be applied to capacitive coupling plasma process chamber etc.
Further, described pedestal periphery and described chamber inner wall below the electrostatic chuck of described pedestal are respectively arranged with the first bracing or strutting arrangement and the second bracing or strutting arrangement, and the first end of described confinement ring contacts with the second bracing or strutting arrangement with the first bracing or strutting arrangement respectively with the second end.
Fig. 2 is according to the structural representation of the plasma process chamber of a specific embodiment of the present invention.Inductance coupling high type plasma etch chamber chamber 200 as shown in the figure has a process chambers, and process chambers is essentially cylindricality, and process chambers sidewall perpendicular.Inductance coupling high type plasma etch chamber chamber 200 comprise be substantially metal sidewall cylindraceous and insulation top board 204, formation can be evacuated the airtight space that device (not shown) vacuumizes.Pedestal 208 supports electrostatic chuck 210, and described electrostatic chuck 210 supports pending substrate.Be applied to the antenna 206 that is coiled type from the radio-frequency power of radio frequency power source.Processing gas from source of the gas is supplied in reaction chamber by pipeline, to light and to maintain plasma, and thus substrate is processed.In standard inductor coupled mode plasma etch chamber chamber, gas is by together injecting to be fed in vacuum tank at one of the injector/shower nozzle around reaction chamber and middle shower nozzle or both.Region between chamber roof and pedestal 108 is process zone P2.Between pedestal 208 and chamber sidewall, be provided with confinement ring 212, the region in confinement ring below 212 is exhaust gas region S2.
Fig. 3 is according to the structural representation of the confinement ring of the plasma process chamber of a specific embodiment of the present invention.As shown in Figure 3, described confinement ring 212 comprises several separable fan-shaped subrings, is respectively the first subring 212a, the second subring 212b, the 3rd subring 212c and the 4th subring 212d.Above-mentioned the first subring 212a, the second subring 212b, the 3rd subring 212c and the 4th subring 212d can upwards start take its second end A1 near described chamber sidewall as fulcrum respectively.Arrow in Fig. 3 shows the direction that starts of the first subring 212a, the second subring 212b, the 3rd subring 212c and the 4th subring 212d.
Fig. 4 is the schematic diagram starting according to the confinement ring of the plasma process chamber of a specific embodiment of the present invention, as shown in Figure 4, further, described the first subring 212a, the second subring 212b, the 3rd subring 212c and the 4th subring 212d can upwards start respectively 0 ~ 90 degree take its second end A1 near described chamber sidewall as fulcrum.In figure, the direction of arrow shows the direction that starts of confinement ring 212, and it is illustrated is the situation that starts 90 degree.
Therefore, between pedestal 208 and confinement ring 212, be provided with an opening, make Clean-cleaning plasma to enter chamber below by this space, thereby carry out clean to the polymer that is positioned at base side face 208a and chamber sidewall surface 202a.
Further, described second end of described confinement ring is fixed on described the second bracing or strutting arrangement (not shown).
Further, described in several, the first subring 212a, the second subring 212b, the 3rd subring 212c and the 4th subring 212d are also connected with respectively one first drive unit 218, and it is respectively used to drive described the first subring 212a, the second subring 212b, the 3rd subring 212c and the 4th subring 212d upwards to start take its second end A1 near described chamber sidewall as fulcrum.
It will be appreciated by those skilled in the art that described the first drive unit 218 can realize in the mode of hardware, software and software and hardware combining.In the prior art, its existing ripe technical support, for simplicity's sake, repeats no more.
Fig. 5 is the structural representation of the plasma process chamber of another specific embodiment according to the present invention.Inductance coupling high type plasma etch chamber chamber 200 as shown in the figure has a process chambers, and process chambers is essentially cylindricality, and process chambers sidewall perpendicular.Inductance coupling high type plasma etch chamber chamber 200 comprise be substantially metal sidewall cylindraceous and insulation top board 204, formation can be evacuated the airtight space that device (not shown) vacuumizes.Pedestal 208 supports electrostatic chuck 210, and described electrostatic chuck 210 supports pending substrate.Be applied to the antenna 206 that is coiled type from the radio-frequency power of radio frequency power source.Processing gas from source of the gas is supplied in reaction chamber by pipeline, to light and to maintain plasma, and thus substrate is processed.In standard inductor coupled mode plasma etch chamber chamber, gas is by together injecting to be fed in vacuum tank at one of the injector/shower nozzle around reaction chamber and middle shower nozzle or both.Region between chamber roof and pedestal 108 is process zone P2.Between pedestal 208 and chamber sidewall, be provided with confinement ring 212, the region in confinement ring below 212 is exhaust gas region S2.
Fig. 6 is the schematic diagram that the confinement ring of the plasma process chamber of another specific embodiment according to the present invention moves up and down, and as shown in Figure 6, described confinement ring 212 can move up and down with respect to described pedestal 208.Wherein, the confinement ring being shown in dotted line has been indicated the home position of confinement ring, the position that confinement ring shown in solid line has indicated confinement ring to move to, therefore, confinement ring 212 moves to pedestal 208 tops, between pedestal 208 and confinement ring 212, be provided with an opening, make Clean-cleaning plasma to enter chamber below by this space, thereby carry out clean to the polymer that is positioned at base side face 208a and chamber sidewall surface 202a.
Further, the as many as of described confinement ring 212 can move up and down with respect to described pedestal 208 distance reaches the lower surface of the air injector of described chamber top.The distance that wherein, can move by Reference numeral d indication confinement ring 212 in Fig. 6.
Referring to Fig. 5, described confinement ring 212 belows are also provided with a mobile device 218 for structure in the form of a ring, and wherein, described mobile device 218 be arranged in parallel with confinement ring 212, and it can hold up confinement ring 212 and move up and down.Also be connected with at least one second drive unit 214 at described mobile device 218, it is for driving described mobile device 218 to move up and down to drive described confinement ring 212 to move up and down with respect to described pedestal.
Especially, described the second drive unit comprises cylinder or stepper motor.
Alternatively, described confinement ring 212 can also be directly connected in several the second drive units, and described the second drive unit is common drives described confinement ring to move up and down with respect to described pedestal.Further, described the second drive unit comprises cylinder or stepper motor.Wherein, in the present embodiment, described confinement ring 212 is connected with 3 the second drive units, and the second drive unit directly acts on described confinement ring, and acting in conjunction in confinement ring 212 to drive it to move up and down equably.
Second aspect present invention also provides a kind of clean method of plasma process chamber 200, wherein, the previously described confinement ring 212 of described plasma process chamber, wherein, described clean method comprises the steps:
Step (a), provides clean air to chamber interior, and excitation cleaning γ-ray emission plasma;
Step (b), mobile described confinement ring, to produce an opening between described pedestal and described confinement ring, makes Clean-plasma to enter described exhaust gas region by this opening;
Step (c), utilizes the vacuum pump of described plasma process chamber will clean beyond redundancy discharge chamber.
Particularly, described clean air comprises O
2and CF
4.
Further, described step (b) also comprises, move up and down described confinement ring 212 ' with respect to described pedestal 208, to produce an opening between described pedestal 208 and described confinement ring 212 ', make Clean-plasma to enter described exhaust gas region S2 by this opening.
Further, described confinement ring 212 comprises several separable fan-shaped subring 212a ~ d, wherein, described step (b) also comprises, respectively described subring 212a ~ d is upwards started to 0 ~ 90 degree take its second end A1 near described chamber sidewall as fulcrum, to produce an opening between described pedestal 208 and described confinement ring 212, make Clean-plasma to enter described exhaust gas region S2 by this opening.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple modification of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (16)
1. the confinement ring for plasma process chamber, wherein, described plasma process chamber comprises plasma processing region and exhaust gas region, described confinement ring is between the plasma processing region and exhaust gas region of described plasma treatment chamber, there are multiple gas passages, be provided with a pedestal in the bottom of described plasma process chamber, it is characterized in that: described confinement ring is for movably, can produce an opening between described pedestal and described confinement ring, make Clean-plasma to enter described exhaust gas region by this opening, wherein, described plasma process chamber also comprises a drive unit, described drive unit is used for driving described confinement ring to move.
2. confinement ring according to claim 1, it is characterized in that, described pedestal periphery and described chamber inner wall below the electrostatic chuck of described pedestal are respectively arranged with the first bracing or strutting arrangement and the second bracing or strutting arrangement, and the first end of described confinement ring contacts with the second bracing or strutting arrangement with the first bracing or strutting arrangement respectively with the second end.
3. confinement ring according to claim 2, is characterized in that, described confinement ring comprises several separable fan-shaped subrings, and described subring can upwards start take its second end near described chamber sidewall as fulcrum respectively.
4. confinement ring according to claim 3, is characterized in that, described subring can upwards start respectively 0 ~ 90 degree take its second end near described chamber sidewall as fulcrum.
5. confinement ring according to claim 4, is characterized in that, described second end of described confinement ring is fixed on described the second bracing or strutting arrangement.
6. confinement ring according to claim 3, it is characterized in that, described drive unit comprises the first drive unit, wherein, described in several, subring is also connected with respectively one first drive unit, and it is respectively used to drive described subring upwards to start take its second end near described chamber sidewall as fulcrum.
7. confinement ring according to claim 1, is characterized in that, described confinement ring can move up and down with respect to described pedestal.
8. confinement ring according to claim 7, is characterized in that, the as many as of distance that described confinement ring can move up and down with respect to described pedestal reaches the lower surface of the air injector of described chamber top.
9. confinement ring according to claim 7, it is characterized in that, described drive unit comprises the second drive unit, wherein, described confinement ring below is also provided with a mobile device for structure in the form of a ring, be connected with at least one second drive unit at described mobile device, it is for driving described mobile device to move up and down to drive described confinement ring to move up and down with respect to described pedestal.
10. confinement ring according to claim 9, is characterized in that, described the second drive unit comprises cylinder or stepper motor.
11. confinement ring according to claim 7, it is characterized in that, described drive unit comprises the second drive unit, and described confinement ring is connected with several the second drive units, and described the second drive unit is common drives described confinement ring to move up and down with respect to described pedestal.
12. confinement ring according to claim 11, is characterized in that, described the second drive unit comprises cylinder or stepper motor.
The clean method of 13. 1 kinds of plasma process chamber, wherein, described plasma process chamber comprises the confinement ring described in claim 1 to 12 any one, it is characterized in that, described clean method comprises the steps:
Step (a), provides clean air to chamber interior, and excitation cleaning γ-ray emission plasma;
Step (b), mobile described confinement ring, to produce an opening between described pedestal and described confinement ring, makes Clean-plasma to enter described exhaust gas region by this opening;
Step (c), utilizes the vacuum pump of described plasma process chamber will clean beyond redundancy discharge chamber.
14. clean methods according to claim 13, is characterized in that, described clean air comprises O
2and CF
4.
15. clean methods according to claim 13, it is characterized in that, described step (b) also comprises, move up and down described confinement ring with respect to described pedestal, to produce an opening between described pedestal and described confinement ring, make Clean-plasma to enter described exhaust gas region by this opening.
16. clean methods according to claim 13, it is characterized in that, described confinement ring comprises several separable fan-shaped subrings, wherein, described step (b) also comprises, respectively described subring is upwards started to 0 ~ 90 degree take its second end near described chamber sidewall as fulcrum, to produce an opening between described pedestal and described confinement ring, make Clean-plasma to enter described exhaust gas region by this opening.
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| CN109994357A (en) * | 2017-12-29 | 2019-07-09 | 中微半导体设备(上海)股份有限公司 | A kind of plasma processing apparatus |
| CN113745081A (en) * | 2020-05-27 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | Isolating ring assembly, plasma processing device and processing method |
| CN115954257A (en) * | 2023-03-14 | 2023-04-11 | 长鑫存储技术有限公司 | Substrate processing apparatus, gas confinement assembly adjustment method, and gas confinement assembly adjustment apparatus |
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| CN113745081A (en) * | 2020-05-27 | 2021-12-03 | 中微半导体设备(上海)股份有限公司 | Isolating ring assembly, plasma processing device and processing method |
| CN113745081B (en) * | 2020-05-27 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | Isolation ring assembly, plasma processing device and processing method |
| CN115954257A (en) * | 2023-03-14 | 2023-04-11 | 长鑫存储技术有限公司 | Substrate processing apparatus, gas confinement assembly adjustment method, and gas confinement assembly adjustment apparatus |
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| Publication number | Publication date |
|---|---|
| CN103854943B (en) | 2016-05-04 |
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