CN115954257A

CN115954257A - Substrate processing apparatus, gas confinement assembly adjustment method, and gas confinement assembly adjustment apparatus

Info

Publication number: CN115954257A
Application number: CN202310240399.XA
Authority: CN
Inventors: 关策; 贾志浩; 张思源; 郑清忠; 张志豪
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2023-03-14
Filing date: 2023-03-14
Publication date: 2023-04-11
Anticipated expiration: 2043-03-14
Also published as: CN115954257B

Abstract

The present disclosure relates to a substrate processing apparatus, a gas confinement assembly, a method of tuning the same, and a tuning apparatus. The plurality of confinement rings are coaxially arranged from bottom to top in sequence and are arranged around the periphery of the electrostatic chuck in a surrounding manner. Each constraint ring is provided with at least two dislocation parts so that each constraint ring is divided into at least two blocking sections; the number of the dislocation parts of each confinement ring is the same, and the dislocation parts of each confinement ring are correspondingly arranged; the blocking sections of the restraining rings are correspondingly arranged, the blocking sections which are oppositely arranged are combined to form a subsection group, and the position of each subsection group can be adjusted up and down under the driving of external force. The height position of the subsection group is adjusted through lifting, the gas flow velocity of a local area above the substrate corresponding to the position of the subsection group can be correspondingly adjusted, so that the uniformity of the etching rate of each part on the surface of the substrate is adjusted, and the yield of products is improved.

Description

Substrate processing apparatus, gas confinement assembly adjustment method, and gas confinement assembly adjustment apparatus

Technical Field

The present disclosure relates to the field of semiconductor technology, and more particularly, to a substrate processing apparatus, a gas confinement assembly, a method of adjusting the same, and an apparatus for adjusting the same.

Background

With the development of semiconductor technology, substrate processing apparatuses, such as plasma processing apparatuses, are widely used in various semiconductor manufacturing processes, such as deposition processes (e.g., chemical vapor deposition), etching processes (e.g., dry etching), and the like. Taking a plasma etching process as an example, an electrode is arranged in a reaction chamber of a plasma etching device, etching gas is provided into the reaction chamber as process gas, plasma of the process gas is formed in the reaction chamber by applying radio frequency on the electrode, and etching is completed by radicals, ions and the like generated by the plasma.

In a conventional substrate processing apparatus, a gas confinement ring (confinement ring) is disposed inside a reaction chamber, so that the gas confinement ring surrounds the periphery of a substrate (e.g., a wafer), and serves as a confinement barrier for a plasma reaction gas diffusing from an area above the substrate to the periphery thereof. During actual work, the height is adjusted by driving the gas confinement ring to move up and down, so that the gas pressure of the reaction chamber is adjusted, and the etching rate or the deposition rate on the surface of the substrate is controlled in a matching manner with the flow rate of the reaction gas. However, the gas confinement ring is a complete ring, and only the whole lifting adjustment can be realized, so that the uniformity of the surface thickness of the produced substrate product is poor, and the product quality is low.

Disclosure of Invention

In view of the foregoing, there is a need to overcome the shortcomings of the prior art and to provide a substrate processing apparatus, a gas confinement assembly, a method of tuning the same, and a tuning apparatus that can improve the uniformity of etching to improve product quality.

The technical scheme is as follows: a gas confinement assembly, comprising:

a confinement ring for surrounding a periphery of the space; the constraint ring is provided with at least two dislocation parts so as to divide the constraint ring into at least two blocking sections; the position of each of the barrier segments is individually displaceable up and down to adjust the gas flow rate of the space at the location of the barrier segment.

In one embodiment, the dislocated portion is any one or a combination of slits, notches, or deformable connectors disposed on the confinement ring.

In one embodiment, the height of the dislocated portion at the notch is smaller than that of the blocking section, and the dislocated portion and the two blocking sections connected with the dislocated portion are of an integral structure.

In one embodiment, the deformable connecting piece is an elastic connecting pipe, and two ends of the elastic connecting pipe are respectively sleeved on the ends of two adjacent blocking sections.

In one embodiment, the dislocated portions of the confinement rings are equally spaced.

In one embodiment, the number of the confinement rings is multiple, and the multiple confinement rings are coaxially arranged from bottom to top in sequence.

In one embodiment, the number of the dislocation parts of each confinement ring is the same, and the positions of the dislocation parts of the confinement rings are correspondingly arranged; the blocking sections of the restraint rings are correspondingly arranged in position, the blocking sections which are oppositely arranged in position are combined to form a subsection group, and the position of each subsection group can be respectively adjusted up and down under the driving of the lifting assembly.

A substrate processing apparatus comprising the gas confinement assembly, the substrate processing apparatus further comprising:

the electrostatic chuck is arranged in the reaction chamber and used for supporting a substrate;

a gas injection section located above the electrostatic chuck;

the gas confinement assembly is arranged around the periphery of the electrostatic chuck;

the lifting assemblies are connected with the blocking sections in a one-to-one correspondence mode and are used for driving the corresponding blocking sections to move up and down.

In one embodiment, the lifting assembly comprises a stepping motor and a lead screw assembly; the stepping motor is connected with the screw rod assembly, and the screw rod assembly is connected with the corresponding blocking section.

In one embodiment, the lifting assembly further comprises a lifting rod connected with the screw rod assembly, the screw rod assembly is connected with the blocking section through the lifting rod, and the lifting rod is provided with a supporting part for supporting the blocking section; the blocking section is provided with a through hole, and the lifting rod movably penetrates through the through hole.

In one embodiment, the plurality of bearing parts are arranged in sequence along the axial direction of the lifting rod, and when viewed along the axial direction of the lifting rod, the plurality of bearing parts are respectively arranged at a plurality of different positions along the circumferential direction of the lifting rod; the restraint rings are arranged coaxially from bottom to top and are arranged in one-to-one correspondence to the bearing parts.

In one embodiment, the substrate processing apparatus further includes a controller and a thickness sensor, the controller is electrically connected to the thickness sensor and the lifting assembly, respectively, the thickness sensor is configured to sense thickness distribution information of the surface of the substrate, and the controller is configured to correspondingly control the lifting assembly to operate according to the thickness distribution information of the surface of the substrate.

A method for adjusting a substrate processing apparatus, with which the substrate processing apparatus is employed, the method comprising the steps of:

acquiring thickness distribution information of the surface of the substrate;

and controlling at least one lifting assembly to lift and adjust the height position of the corresponding blocking section according to the thickness distribution information of the surface of the substrate.

In one embodiment, the controlling at least one lifting assembly to lift and lower according to the thickness distribution information of the surface of the substrate to adjust the height position of the corresponding blocking section includes:

determining a region with relatively thick substrate surface thickness according to the thickness distribution information of the substrate surface;

controlling the lifting assembly corresponding to the area with the relatively thick thickness to lift the height position of the segment group, and/or controlling the lifting assembly corresponding to the area with the relatively thin thickness to lower the height position of the segment group.

In one embodiment, the method for conditioning a substrate processing apparatus further comprises the steps of: and obtaining thickness differences of different positions on the surface of the substrate according to the thickness distribution information, controlling the lifting assembly to act according to the thickness differences, and/or performing warning operation when the thickness differences exceed preset values.

A conditioner of a substrate processing apparatus for use in the substrate processing apparatus, the conditioner comprising:

the thickness distribution information acquisition module is used for acquiring the thickness distribution information of the surface of the substrate;

and the lifting module is used for controlling at least one lifting assembly to lift and adjust the height position of the corresponding segmented group according to the thickness distribution information of the surface of the substrate.

A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method when executing the computer program.

A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method.

According to the substrate processing device, the gas restraint assembly, the adjusting method of the gas restraint assembly and the adjusting device, after the substrate processing device is arranged on the periphery of the electrostatic chuck, a substrate to be etched is located on the electrostatic chuck, namely the gas restraint assembly surrounds the periphery of the substrate to be etched, in the process of etching the substrate, thickness distribution information of each part of the surface of the substrate is timely obtained, the corresponding stop section is correspondingly determined and adjusted to move up and down according to the thickness distribution information of each part, and a large number of researches show that the gas flow velocity of a local area above the substrate corresponding to the position of the stop section can be correspondingly adjusted by adjusting the height position of the stop section in a lifting mode, so that the etching rate of each part on the surface of the substrate is adjusted, the etching uniformity is ensured, and the yield of products is further improved.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification.

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.

Fig. 1 is a diagram illustrating an operation state of a substrate processing apparatus according to an embodiment of the present disclosure.

Fig. 2 is a schematic view of the working state when one of the segment groups in the structure shown in fig. 1 is lifted.

FIG. 3 is a schematic view of a gas confinement assembly according to an embodiment of the present disclosure.

FIG. 4 is a schematic view of a confinement ring of a gas confinement assembly in accordance with an embodiment of the present disclosure.

FIG. 5 is a schematic view of a confinement ring of a gas confinement assembly in accordance with another embodiment of the present disclosure.

FIG. 6 is a schematic view of a confinement ring of a gas confinement assembly in accordance with yet another embodiment of the present disclosure.

FIG. 7 is a schematic view of a confinement ring of a gas confinement assembly in accordance with yet another embodiment of the present disclosure.

FIG. 8 is a graph illustrating etch rates at various locations on a surface of a substrate according to one embodiment of the disclosure.

Fig. 9 is a schematic structural diagram of a lifting assembly according to an embodiment of the disclosure.

Fig. 10 is a schematic top view of the lifting rod in the structure shown in fig. 9.

10. A reaction chamber; 20. an electrostatic chuck; 30. an air injection part; 40. a gas confinement assembly; 41. a confinement ring; 411. a bit-dislocateable portion; 4111. a gap; 4112. a deformable connector; 412. a blocking section; 42. grouping the segments; 50. a lifting assembly; 51. a stepping motor; 52. a screw assembly; 53. lifting a pull rod; 531. a bearing part; 60. an air supply mechanism; 70. a suction mechanism; 80. a substrate.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present disclosure more comprehensible, embodiments accompanying the present disclosure are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

It should be noted that the substrate in this embodiment may be a semiconductor wafer at any stage in the process of forming semiconductor devices, such as integrated circuits or discrete devices (discrete devices), on a substrate. In one embodiment, the substrate comprises a very low dielectric constant dielectric layer and a metal layer on a semiconductor substrate. The substrate may be a photomask, semiconductor wafer, or other workpiece known to one of ordinary skill in the art of electronic device manufacturing. In at least some embodiments, the substrate comprises any material used in the fabrication of any integrated circuit, passive (e.g., capacitors, inductors), and active (e.g., transistors, photodetectors, lasers, diodes) microelectronic elements. The substrate may contain insulating materials (e.g., dielectric materials) that separate such active and passive microelectronic elements from one or more conductive layers formed on top of them. In one embodiment, the substrate is a semiconductor substrate comprising one or more dielectric layers, such as silicon, gallium nitride, gallium arsenide, silicon dioxide, silicon nitride, sapphire, and other dielectric materials. In one embodiment, the substrate is a wafer stack comprising one or more layers. The wafer of one or more layers may comprise a conductive layer, a semiconductor layer, an insulating layer, or a combination of any of the foregoing.

As described in the background art, the related art has a problem that the uniformity of the surface thickness of the substrate product is poor and the quality of the substrate product is low, and it has been found that the problem is caused by the fact that factors such as the shape of the reaction chamber is set to be a non-perfect symmetrical shape, and the local pressure inside the reaction chamber is different, that is, the local pressure in different regions inside the reaction chamber is different, in other words, the gas flow rate in each different local region is different due to the different pressure, and the uniformity of the etching rate or the deposition rate of the substrate surface is affected.

For the above reasons, the present invention provides a substrate processing apparatus, a gas confinement assembly, a method of adjusting the same, and an apparatus for adjusting the same, which are capable of improving the uniformity of the surface thickness of a product to improve the quality of the product.

Referring to fig. 1 and 2, fig. 1 is a block diagram illustrating an operation state of a substrate processing apparatus according to an embodiment of the present disclosure, and fig. 2 is a schematic diagram illustrating an operation state when a left segment group 42 in the structure illustrated in fig. 1 is lifted up. In one embodiment, a substrate processing apparatus, which may be used for etching a surface of a substrate 80 by introducing a reaction gas into the reaction chamber 10 to obtain a desired pattern on the surface of the substrate 80, or may be used for performing a deposition process on the surface of the substrate 80 to obtain a desired pattern on the surface of the substrate 80, is mainly described as an example of the substrate processing apparatus used for etching a surface of the substrate 80 in order to make the present disclosure more clearly understandable.

Wherein, the substrate processing apparatus includes: the plasma processing apparatus includes a reaction chamber 10, an electrostatic chuck 20 disposed inside the reaction chamber 10 and supporting a substrate 80, a gas spraying part 30 disposed above the electrostatic chuck 20 and opposite to the electrostatic chuck 20, a gas confining assembly 40, and a plurality of elevating assemblies 50. The gas confinement assembly 40 is circumferentially disposed about the periphery of the electrostatic chuck 20. The plurality of lifting assemblies 50 are respectively connected to at least two of the blocking sections 412 in a one-to-one correspondence. The lifting assembly 50 is used for driving the corresponding blocking section 412 to move up and down.

Referring to fig. 3, fig. 3 is a schematic structural diagram of a gas confinement assembly 40 according to an embodiment of the present disclosure, wherein the gas confinement assembly 40 according to an embodiment of the present disclosure includes: one or more confinement rings 41. The confinement rings 41 are coaxially disposed from bottom to top and are disposed around the periphery of the electrostatic chuck 20. Each confinement ring 41 is provided with at least two misalignable portions 411 such that each confinement ring 41 is individually divided into at least two barrier segments 412. The position of each barrier section 412 can be individually displaced up and down to adjust the gas flow rate at the location of the respective barrier section 412.

In addition, the number of the dislocation sections 411 of each confinement ring 41 is the same and is set correspondingly. Specifically, the blocking sections 412 of the respective confinement rings 41 are correspondingly arranged, and the blocking sections 412 arranged oppositely are combined to form the segment groups 42, and the position of each segment group 42 can be respectively adjusted up and down under the driving of the lifting assembly 50.

It should be noted that, since the confinement ring 41 is provided with at least two dislocated portions 411, the at least two dislocated portions 411 divide the confinement ring 41 into at least two blocking sections 412, that is, a ring section between any two adjacent dislocated portions 411 corresponds to one blocking section 412.

The dislocation-enabling portion 411 is a portion of the confinement ring 41 that is likely to be dislocated or deformed by an external force.

Referring to fig. 4 and 5, fig. 4 and 5 respectively illustrate a confinement ring 41 of a gas confinement assembly 40 according to two different embodiments of the present disclosure. Optionally, the dislocated portion 411 includes, but is not limited to, a slot 4111 (shown in fig. 4), a notch, or a deformable connection 4112 (shown in fig. 5) on the confinement ring 41.

Referring to fig. 4, when the dislocated portion 411 is disposed as the gap 4111, the dislocated portion is easily dislocated by an external force, so as to satisfy the up-and-down adjustment of the segment group 42; when the dislocated portion 411 is a notch, that is, the height of the dislocated portion 411 is smaller than the height of the blocking section 412, the dislocated portion 411 and the two blocking line segments connected thereto are an integrated structure, and are obtained by milling on the confinement ring 41, for example, and are easily deformed and bent under the action of external force, so as to satisfy the up-and-down adjustment position of the segment group 42; referring to fig. 5, when the dislocated portion 411 is configured as the deformable connecting member 4112, it is also easily deformed and bent under the action of external force, so as to satisfy the up-and-down adjustment of the segment group 42.

In some embodiments, the design of the structural form of each dislocated portion 411 on the same confinement ring 41 is the same, i.e. each is, for example, one of the gap 4111, the notch and the deformable connector 4112, or may not be completely the same, i.e. each is provided with the gap 4111, the notch and the deformable connector 4112, and how to configure the arrangement can be flexibly adjusted according to actual requirements. Similarly, the structure of each dislocated portion 411 may be the same for different confinement rings 41, such as all slits 4111, all gaps, or all deformable connecting members 4112, or may not be the same, and is not limited herein.

In the substrate processing apparatus and the gas confinement assembly 40, after the gas confinement assembly 40 is mounted on the periphery of the electrostatic chuck 20, the substrate 80 to be etched is positioned on the electrostatic chuck 20, that is, the gas confinement assembly 40 surrounds the periphery of the substrate 80 to be etched, in the process of etching the substrate 80, thickness distribution information of each part on the surface of the substrate 80 is timely obtained, the corresponding segment group 42 is correspondingly determined and adjusted to move up and down according to the thickness distribution information of each part, and a large number of researches show that the gas flow rate of a local area above the substrate 80 corresponding to the position of the segment group 42 can be correspondingly adjusted by adjusting the height position of the segment group 42 in a lifting and lowering manner, so that the etching rate of the local part on the surface of the substrate 80 is adjusted, the etching uniformity is ensured, and the yield of products is further improved.

In an embodiment, referring to fig. 8, fig. 8 illustrates a schematic diagram of the etching rates of different portions on the surface of the substrate 80 according to an embodiment, and as can be seen from fig. 8, the etching rate of the upper side of the substrate 80 is lower, and at this time, the two segment groups 42 corresponding to the upper side of the substrate 80 can be driven to lift the height position, so that the flow rate of the reaction gas on the upper side of the substrate 80 is increased, thereby lifting the etching rate of the upper side of the substrate 80, and the real-time adjustment according to the monitoring result can be achieved, and the local etching rate can be adjusted in time, so that the uniformity of the etching rate on the surface of the substrate 80 is improved.

Referring to fig. 3 and 4, in one embodiment, the confinement rings 41 include, but are not limited to, circular rings, and the diameters of the confinement rings 41 may be the same or different. Alternatively, the confinement rings 41 can be flexibly adjusted to other shapes according to actual requirements.

Referring to fig. 5, in one embodiment, the deformable connection 4112 includes, but is not limited to, at least one of an elastic member, a flexible member, and a plastic member.

Wherein each deformable connection 4112 of the confinement ring 41 can be either uniform, i.e., each is, for example, an elastic, flexible, or plastic member; or may be different from each other, for example, the three deformable connecting members 4112 of the confinement ring 41 are an elastic member, a flexible member and a plastic member. In addition, the deformable connecting members 4112 of different constraining rings 41 may be consistent or different from each other, and may be flexibly adjusted and set according to actual requirements.

Referring to fig. 5, in one embodiment, the elastic member includes, but is not limited to, an elastic connection tube, and two ends of the elastic connection tube are respectively sleeved on the ends of two adjacent barrier segments 412.

Specifically, the elastic connection tube is, for example, a silica gel sleeve or other various elastic materials that do not react with the reaction gas, which is flexibly set according to actual requirements. In addition, in order to allow the segment groups 42 to flexibly adjust the position up and down under the driving of an external force, the hardness of the elastic connection pipe is less than that of the blocking section 412, and optionally, the blocking section 412 is made of a hard material, for example.

In one embodiment, the barrier section 412 is made of a metallic material or a non-metallic material, for example. The non-metallic material is made of, for example, a ceramic material, quartz, a silica gel material, or other materials that do not react with the reaction gas. In addition, the blocking section 412 may be bare or may be provided with various other materials on its outer wall surface, such as by coating, gluing, etc.

It should be noted that, in the plurality of confinement rings 41, a gap may be provided between any two adjacent confinement rings 41, or a mutual abutting relationship may be provided between any two adjacent confinement rings 41, and specifically, the adjustment and the setting may be flexible according to actual requirements, which is not limited herein. Optionally, a gap is provided between each two adjacent confinement rings 41, and the sizes of the gaps are consistent, different or not identical. Alternatively, the confinement rings 41 are disposed in abutment from bottom to top.

In one embodiment, the confinement rings 41 may be independently disposed, that is, adjacent confinement rings 41 are not connected to each other, and after being installed inside the reaction chamber 10, the blocking sections 412 of the segmented group 42 are respectively connected to the corresponding lifting assembly 50, on one hand, the height position of each blocking section 412 of the corresponding segmented group 42 can be adjusted under the lifting driving of the lifting assembly 50, and on the other hand, the confinement rings 41 are independently disposed, that is, the height position of each confinement ring 41 can be flexibly adjusted according to the process requirement, so as to adjust the gap size between two adjacent confinement rings 41; of course, the restraining rings 41 may be connected to each other, and specifically, the segment groups 42 are taken as a unit, so that the blocking sections 412 of the segment groups 42 are connected to each other, and thus, the lifting assembly 50 can realize synchronous height position adjustment of the blocking sections 412 of the segment groups 42 in the process of driving the corresponding segment groups 42 to lift.

Referring to fig. 3 to 7, in one embodiment, the dislocated portions 411 of each confinement ring 41 are equally spaced, that is, the length of each blocking section 412 of each confinement ring 41 is consistent, so as to have a better control effect on the reaction gas inside the reaction chamber 10. Of course, as some alternatives, the dislocated portion 411 of each confinement ring 41 may be arranged at unequal intervals.

Referring to fig. 3, 6 and 7, in one embodiment, the number of the dislocated portions 411 of each confinement ring 41 includes, but is not limited to, two, three, four, five, six or other numbers. Accordingly, the number of barrier segments 412 per confinement ring 41 includes, but is not limited to, two, three, four, five, six, or other numbers.

Referring again to fig. 1, in one embodiment, the substrate processing apparatus further comprises a gas supply mechanism 60. The gas supply mechanism 60 is communicated with the gas injection part 30, the gas supply mechanism 60 supplies one or more reaction gases to the gas injection part 30, the gas injection part 30 is used for injecting the reaction gases into the reaction chamber 10 and forming plasma under the action of the magnetic field of the electrode assembly, and the plasma can be etched or deposited when acting on the surface of the substrate 80.

When the lifting precision of the lifting assembly 50 is higher, the uniformity of the etching rate of each part on the surface of the substrate 80 can be adjusted more accurately, and the product yield is higher.

Referring to fig. 1 to 3, in one embodiment, the lifting assembly 50 includes a stepping motor 51 and a lead screw assembly 52. The stepper motor 51 is connected to a lead screw assembly 52, and the lead screw assembly 52 is connected to the corresponding segment group 42. Therefore, because the precision of the stepping motor 51 is high, when the stepping motor 51 rotates for one turn, the segment group 42 can be correspondingly driven to move up and down through the screw rod assembly 52, and the precise control of the lifting height of the lifting assembly 50 is realized.

The specific structural form of the screw rod assembly 52 is various, and the screw rod assembly 52 can correspondingly drive the segment group 42 to move up and down under the rotation driving of the stepping motor 51, and the specific structural composition of the screw rod assembly 52 is not expanded.

Optionally, a stepping motor 51 is specifically disposed at the top of the reaction chamber 10, for example, and the stepping motor 51 drives the segment group 42 located therebelow to lift and lower through a screw assembly 52 to adjust the height position. Alternatively, the stepping motor 51 may also be disposed on a peripheral bracket of the electrostatic chuck 20, and the stepping motor 51 drives the segment assembly 42 above the stepping motor to adjust the height position through the lead screw assembly 52.

It should be noted that the lifting assembly 50 is not limited to the combination of the stepping motor 51 and the screw rod assembly 52 in the above embodiments, but also adopts the combination of the stepping motor 51 and the cam set, and when the stepping motor 51 drives the cam set to rotate, the stepping motor 51 correspondingly drives the segment set 42 to lift and lower to adjust the height position, and may also adopt, for example, the stepping motor 51, a driving wheel, a driven wheel and a transmission element connecting the driving wheel and the driven wheel, and drive the segment set 42 to lift and lower to adjust the height position through the transmission element, or adopt, for example, an air cylinder driving structure, a hydraulic cylinder driving structure, and the like.

Referring to fig. 1, 2, 9 and 10, fig. 9 shows a schematic structural view of a lifting assembly 50 according to an embodiment of the disclosure, and fig. 10 shows a schematic structural view of a top view of a lifting rod 53 in the structure shown in fig. 9. In one embodiment, the lifting assembly 50 further includes a lifting rod 53 connected to the lead screw assembly 52. The screw rod assembly 52 is connected to the blocking section 412 through the lifting rod 53, and the lifting rod 53 is provided with a supporting portion 531 for supporting the blocking section 412. The blocking section 412 is provided with a through hole, and the lifting rod 53 is movably arranged in the through hole in a penetrating manner. Thus, the screw assembly 52 drives the lifting rod 53 to move up and down, the lifting rod 53 supports the blocking section 412 through the supporting portion 531, and the blocking section 412 can be driven to move up and down to adjust the height position. In addition, when the blocking section 412 is not needed, that is, the blocking section 412 needs to be lowered to the bottommost position, the screw rod assembly 52 moves downward to drive the blocking section 412 to move downward until the blocking section 412 moves to the bottommost position, for example, stops on the disk surface of the electrostatic chuck 20, and because the blocking section 412 is provided with a through hole, the screw rod assembly 52 and the lifting rod 53 can still move downward without being interfered by the blocking section 412.

The shape of the through hole is flexibly adjusted and set according to the diameter of the lifting rod 53 and the position of the supporting portion 531, and the specific shape has many forms and is not limited herein.

Wherein the bottommost position is set according to practical requirements, and is generally, for example, a position flush with the electrostatic chuck 20.

It should be noted that the "lifting rod 53" may be a part of the "screw rod assembly 52", that is, the "lifting rod 53" and the other part of the "screw rod assembly 52" are integrally formed; the "lifting rod 53" can be manufactured separately and then combined with the other parts of the screw rod assembly 52 into a whole.

Referring to fig. 1, 2, 9 and 10, in an embodiment, the supporting portion 531 is provided in plural, the plural supporting portions 531 are sequentially arranged along the axial direction of the lifting rod 53, and when viewed along the axial direction of the lifting rod 53, the plural supporting portions 531 are respectively arranged at plural different positions in the circumferential direction of the lifting rod 53. Optionally, the supporting portion 531 is a step formed at different height positions on different sides of the lifting rod 53, and the surface shape of the step can be flexibly adjusted and set according to actual requirements, including but not limited to various shapes such as an arc shape, a semi-circle shape, an oval shape, a polygon shape, and the like. In addition, the restriction rings 41 are plural, and the plural restriction rings 41 are coaxially arranged from bottom to top in sequence, and are arranged in one-to-one correspondence with the plural support portions 531. As shown in fig. 9 and 10, the number of the supporting portions 531 is 3, the number of the restraining rings 41 is correspondingly 3, and when the lifting rod 53 is lifted up and down, the height positions of the 3 blocking sections 412 driving the restraining rings 41 can be synchronously adjusted. Therefore, on one hand, since the plurality of supporting portions 531 are sequentially arranged on the lifting rod 53 along the axial direction of the lifting rod 53, that is, located at a plurality of different height positions of the lifting rod 53, the blocking sections 412 at different height positions of the segment group 42 can be correspondingly supported by the plurality of supporting portions 531 on the lifting rod 53, and when the lifting assembly 50 works, the blocking sections 412 of the segment group 42 can be driven to lift to adjust the height position; on the other hand, when the segment group 42 is not needed to be used, that is, when the segment group 42 needs to be lowered to the bottommost position, the screw rod assembly 52 moves downward to drive each blocking segment 412 of the segment group 42 to move downward until the blocking segment 412 moves to the bottommost position, for example, the blocking segment stops on the disk surface of the electrostatic chuck 20, since each blocking segment 412 is provided with a through hole, and the through hole of each blocking segment 412 may be completely the same or different in shape, and the shape is set according to the shape of the corresponding bearing portion 531, as long as in the up-and-down movement process, the blocking segments 412 of the segment group 42 can only be supported by the corresponding bearing portions 531, so that when the segment group 42 moves to the bottommost position, the blocking segments 412 of the segment group 42 are sequentially stacked from bottom to top.

As a specific example, the shape of the through hole of the blocking section 412 is adapted to the radial cross section at a position slightly higher than the lifting rod 53 of the bearing portion 531, so that the blocking section 412 can bear on the bearing portion 531 while the blocking section 412 can move upward relative to the lifting rod 53.

Furthermore, the plurality of bearing portions 531 are arranged in sequence around the lifting rod 53 in the circumferential direction as viewed in the axial direction of the lifting rod 53, so that the respective blocking sections 412 of the segment groups 42 are arranged in a stacked manner from bottom to top in sequence during the movement of the segment groups 42 to the bottommost position, and the stacking process does not interfere. When the segment group 42 needs to be used, the lifting assembly 50 drives the lifting rod 53 to ascend, and after the lifting rod 53 ascends, the blocking segments 412 of the segment group 42 are respectively correspondingly arranged on the plurality of supporting parts 531 of the lifting rod 53.

In one embodiment, the substrate processing apparatus further comprises a controller (not shown) and a thickness sensor. The controller is electrically connected to the thickness sensor and the lifting assembly 50, the thickness sensor is used for sensing the thickness distribution information of the surface of the substrate 80, and the controller is used for correspondingly controlling the lifting assembly 50 to act according to the thickness distribution information of the surface of the substrate 80.

Alternatively, the thickness sensor includes, but is not limited to, one or more laser range finders, ultrasonic range finders, magnetic induction range finders, and the like, as long as the thickness distribution information of the surface of the substrate 80 can be acquired.

Referring to fig. 1, in one embodiment, the substrate processing apparatus further comprises a pumping mechanism 70. The pumping mechanism 70 includes, but is not limited to, a vacuum pump, which may be, for example, a turbo-molecular pump (TMP). The pumping mechanism 70 is in communication with the reaction chamber 10. The pumping mechanism 70 is operated to pump out the reaction gas inside the reaction chamber 10. The suction mechanism 70 is disposed, for example, on the side, bottom, or other position of the reaction chamber 10.

Referring to fig. 1 to 3, in one embodiment, a method for conditioning a substrate processing apparatus includes:

step S100, obtaining thickness distribution information of the surface of the substrate 80;

step S200, controlling at least one lifting assembly 50 to lift and adjust the height position of the corresponding segment group 42 according to the thickness distribution information of the surface of the substrate 80.

According to the adjusting method of the substrate processing device, in the process of etching the substrate 80, the thickness distribution information of each part on the surface of the substrate 80 is timely obtained, the corresponding segmentation group 42 is correspondingly determined and adjusted to move up and down according to the thickness distribution information of each part, and a large amount of researches show that the gas flow rate of the local area above the substrate 80 corresponding to the position of the segmentation group 42 can be correspondingly adjusted by adjusting the height position of the segmentation group 42 in a lifting mode, so that the uniformity of the etching rate of each part on the surface of the substrate 80 is adjusted, and the yield of products is further improved.

In one embodiment, step S300 includes:

step S310, determining a relatively thick area of the surface of the substrate 80 according to the thickness distribution information of the surface of the substrate 80;

in step S320, the lifting assembly 50 corresponding to the area with the relatively thick thickness is controlled to raise the height position of the segment group 42, and/or the lifting assembly 50 corresponding to the area with the relatively thin thickness is controlled to lower the height position of the segment group 42.

In one embodiment, the method of conditioning a substrate processing apparatus further comprises the steps of: the thickness differences of different positions on the surface of the substrate 80 are obtained according to the thickness distribution information, the movement of the lifting assembly 50 is controlled according to the thickness differences, and/or warning operation is performed when the thickness differences exceed a preset value.

In one embodiment, the various thickness differences and the different lifting heights of the lifting assembly 50 are associated to form a database, and during actual operation, the corresponding lifting assembly 50 is controlled to lift with reference to the database. In addition, after the elevation assembly 50 elevates and adjusts the height position of the segment group 42, the above steps S100 to S300 are repeated, and the elevation height value corresponding to the thickness difference is updated according to the processing result of each time the surface of the substrate 80 is processed. Wherein, when the thickness difference is larger, the lifting height of the lifting assembly 50 is larger; conversely, the smaller the difference in thickness, the smaller the elevation height of the elevation assembly 50.

In one embodiment, a conditioning apparatus of a substrate processing apparatus, the conditioning apparatus of the substrate processing apparatus includes: thickness distribution information acquisition module and lift module. The thickness distribution information acquisition module is used to acquire thickness distribution information of the surface of the substrate 80. The lifting module is used for controlling at least one lifting assembly 50 to lift and adjust the height position of the corresponding segment group 42 according to the thickness distribution information of the surface of the substrate 80.

According to the adjusting device of the substrate processing device, in the process of etching the substrate 80, the thickness distribution information of each part on the surface of the substrate 80 is timely acquired, the corresponding segmentation group 42 is correspondingly determined and adjusted to move up and down according to the thickness distribution information of each part, and a large amount of research finds that the gas flow rate of a local area above the substrate 80 corresponding to the position of the segmentation group 42 can be correspondingly adjusted by adjusting the height position of the segmentation group 42 in a lifting mode, so that the uniformity of the etching rate of each part on the surface of the substrate 80 is adjusted, and the yield of products is further improved.

For the specific definition of the conditioning device of the substrate processing device, reference may be made to the above definition of the conditioning method of the substrate processing device, which is not described in detail here. The respective modules in the conditioning apparatus of the substrate processing apparatus described above may be entirely or partially implemented by software, hardware, and a combination thereof. The modules can be embedded in a hardware form or independent from a processor in the computer device, and can also be stored in a memory in the computer device in a software form, so that the processor can call and execute operations corresponding to the modules. It should be noted that, in the embodiment of the present application, the division of the module is schematic, and is only one logic function division, and there may be another division manner in actual implementation.

It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by hardware related to instructions of a computer program, which can be stored in a non-volatile computer-readable storage medium, and when executed, the computer program can include the processes of the embodiments of the methods described above. Any reference to memory, storage, database or other medium used in the embodiments provided herein can include at least one of non-volatile and volatile memory. Non-volatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical storage, or the like. Volatile Memory can include Random Access Memory (RAM) or external cache Memory. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM), among others.

In one embodiment, a computer device is further provided, which includes a memory and a processor, the memory stores a computer program, and the processor implements the steps of the above method embodiments when executing the computer program.

In an embodiment, a computer-readable storage medium is provided, on which a computer program is stored which, when being executed by a processor, carries out the steps of the above-mentioned method embodiments.

In the etching process of the substrate 80, the computer device and the computer readable storage medium timely obtain the thickness distribution information of each part on the surface of the substrate 80, correspondingly determine and adjust the lifting movement of the corresponding segment group 42 according to the thickness distribution information of each part, and find out through a large amount of researches that the gas flow rate of the local area above the substrate 80 corresponding to the position of the segment group 42 can be correspondingly adjusted by adjusting the height position of the segment group 42 in a lifting manner, so that the uniformity of the etching rate of each part on the surface of the substrate 80 is adjusted, and the yield of products is further improved.

The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above examples merely represent several embodiments of the present disclosure, which are described in more detail and detail, but are not to be construed as limiting the scope of the disclosure. It should be noted that various changes and modifications can be made by one skilled in the art without departing from the spirit of the disclosure, and these changes and modifications are all within the scope of the disclosure. Therefore, the protection scope of the present disclosure should be subject to the appended claims.

In the description of the present disclosure, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present disclosure and to simplify the description, but are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting of the present disclosure.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present disclosure, "a plurality" means at least two, e.g., two, three, etc., unless explicitly specifically limited otherwise.

In the present disclosure, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integral with; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present disclosure can be understood by those of ordinary skill in the art as appropriate.

In the present disclosure, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are for purposes of illustration only and do not denote a single embodiment.

Claims

1. A gas confinement assembly, comprising:

2. The gas confinement assembly of claim 1, wherein the deflectable portion is any one or combination of slits, notches, or deformable connectors disposed on the confinement ring.

3. The gas confinements assembly of claim 2 wherein the height of said repositionable section at said gap is less than the height of said blocking section, said repositionable section and two of said blocking sections connected thereto being of unitary construction.

4. The gas confinement assembly of claim 2, wherein the deformable connector is an elastic connecting tube, and two ends of the elastic connecting tube are respectively sleeved on the ends of two adjacent barrier sections.

5. The gas confinement assembly of any one of claims 1-4, wherein the dislocated portions of the confinement ring are equally spaced.

6. The gas confinement assembly of any one of claims 1-4, wherein the confinement ring is a plurality of confinement rings, and the plurality of confinement rings are coaxially arranged in sequence from bottom to top.

7. The gas confinement assembly of claim 6, wherein the number of the dislocateable portions of each confinement ring is the same, and the position of the dislocateable portions of each confinement ring is correspondingly arranged; the blocking sections of the restraint rings are correspondingly arranged, the blocking sections which are oppositely arranged are combined to form segmentation groups, and the position of each segmentation group can be respectively adjusted up and down under the driving of the lifting assembly.

8. A substrate processing apparatus comprising the gas confinement assembly of any one of claims 1-7, wherein the substrate processing apparatus further comprises:

the electrostatic chuck is arranged in the reaction chamber and is used for supporting a substrate;

a gas injection section located above the electrostatic chuck;

the lifting assemblies are respectively connected with the blocking sections in a one-to-one correspondence mode and are used for driving the corresponding blocking sections to move up and down.

9. The substrate processing apparatus of claim 8, wherein the lift assembly comprises a stepper motor and lead screw assembly; the stepping motor is connected with the screw rod assembly, and the screw rod assembly is connected with the corresponding blocking section.

10. The substrate processing apparatus according to claim 9, wherein the lift assembly further comprises a lifting rod connected to the lead screw assembly, the lead screw assembly is connected to the blocking section through the lifting rod, and the lifting rod is provided with a supporting portion for supporting the blocking section; the blocking section is provided with a through hole, and the lifting rod movably penetrates through the through hole.

11. The substrate processing apparatus according to claim 10, wherein a plurality of the support portions are provided, the plurality of the support portions are arranged in sequence along an axial direction of the lift rod, and the plurality of the support portions are arranged at a plurality of different positions in a circumferential direction of the lift rod, respectively, when viewed along the axial direction of the lift rod; the restraint rings are arranged coaxially from bottom to top and are arranged in one-to-one correspondence to the bearing parts.

12. The substrate processing apparatus of claim 8, further comprising a controller and a thickness sensor, wherein the controller is electrically connected to the thickness sensor and the lifting assembly, respectively, the thickness sensor is configured to sense thickness distribution information of the surface of the substrate, and the controller is configured to correspondingly control the lifting assembly to operate according to the thickness distribution information of the surface of the substrate.

13. A method of adjusting a substrate processing apparatus using the substrate processing apparatus according to any one of claims 8 to 12, characterized by comprising the steps of:

acquiring thickness distribution information of the surface of the substrate;

14. The adjusting method according to claim 13, wherein the controlling at least one lifting assembly to lift and lower according to the thickness distribution information of the substrate surface to adjust the height position of the corresponding blocking section comprises:

15. The conditioning method according to claim 13, characterized in that the conditioning method of the substrate processing apparatus further comprises the steps of: and obtaining thickness differences of different positions on the surface of the substrate according to the thickness distribution information, controlling the lifting assembly to act according to the thickness differences, and/or performing warning operation when the thickness differences exceed preset values.

16. A conditioner of a substrate processing apparatus for the substrate processing apparatus according to any one of claims 8 to 12, comprising:

17. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor realizes the steps of the method of any one of claims 13 to 15 when executing the computer program.

18. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 13 to 15.