CN208923045U - Wafer processing apparatus - Google Patents
Wafer processing apparatus Download PDFInfo
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- CN208923045U CN208923045U CN201821876296.3U CN201821876296U CN208923045U CN 208923045 U CN208923045 U CN 208923045U CN 201821876296 U CN201821876296 U CN 201821876296U CN 208923045 U CN208923045 U CN 208923045U
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Abstract
The utility model provides a kind of Wafer processing apparatus, opening time and/or closed shutter shut-in time that genuine switchs the nonadjustable valve system starting gate of speed of gate can be extended by delay control device, to improve because the knife switch on cavity is too fast to lead to the deposit flaking on cavity inner wall the problem of, reduce the generation of crystal column surface dust particale, and then improve product yield, reduce board cleaning frequency and production cost, the technical solution of the utility model is suitable for the various wafer processors that genuine valve system is unable to control the switching speed for the gate that it is connected, i.e. cavity not only includes reaction chamber, it further include transfer chamber, cooling chamber, purge chamber, hothouse etc..
Description
Technical field
The utility model relates to semiconductor production manufacturing technology field, in particular to a kind of Wafer processing apparatus.
Background technique
With the diminution of device critical dimensions, more and more crucial is become to the control that crystal column surface is stained.If producing
The pollution sources such as dust particale are introduced in the process, it is possible to be caused the open circuit or open circuit of circuit, thus be manufactured in semiconductor technology
In, how to avoid the problem that the pollution in technique manufacture is to have to concern.With in production, Wafer processing apparatus is automated
The interaction of the raising of degree, personnel and product tails off, and prevents from bringing the emphasis of dust particale to be more put into crystalline substance in production
Above dust particale caused by circle processing equipment, such as the deposition accumulated on apparatus cavity inner wall (surfaces such as including slide holder)
Object thickens with the lasting increase using time or access times of the equipment, when accumulation deposit thickness to a certain extent
When, it can be influenced by external force or self gravity and fall off and generate dust particale, these dust particales are fallen may make in crystal column surface
Component failure.For this purpose, in process of production, often need to clean the chamber inner wall and other component of Wafer processing apparatus,
The deposit of accumulation is removed, to prevent wafer caused by falling off because of it from staining.But carrying out to high-frequency chamber cleaning can lead again
Production capacity is caused to reduce the problem of shortening with service life of equipment.
In addition, the dust particale pollution problem of film deposition equipment is the emphasis of concern in various Wafer processing apparatus
One of, please refer to Figure 1A and Figure 1B, this kind of board generally include cavity (chamber) 11 and for control the cavity 11 with
The gate 12 of extraneous on-off, the opening and closing of the gate 12 are controlled by 20 (e.g. dead-beat on-off action of a valve system
Valve system gate valve), and the speed of the genuine open and close gate 11 of the valve system 20 is non-adjustable, i.e., valve system 20 makes
The genuine switching speed of gate 12 is non-adjustable.When carrying out thin film vapor deposition technique, gate 11 can be opened by valve system 20,
Wafer 30 is fitted on the slide holder 10 in cavity, then by 20 closed shutter 11 of valve system to turn off cavity and extraneous company
Knot forms vacuum cavity, later, using energy system (not shown) to energy needed for cavity introducing reaction (as utilized heating
System heats settling chamber), and the gaseous chemistry containing atom needed for forming film or molecule is passed through into cavity
Gas, the chemical gas raw reaction of hybrid concurrency in the cavity, finally forms the solid-state for wishing to be formed in 30 surface aggregation of wafer
Film and gaseous products after film to be deposited reaches required thickness, are connected to the exhaust system of cavity and system, will be in cavity
Gaseous products discharge, and make cavity vacuum breaker, then by 20 starting gate 11 of valve system to open cavity, and then take out brilliant
Circle 30.In this film deposition process, in addition to other than 30 surface of wafer forms film, inevitable also can include on slide holder 10
Accumulation of deposits 40 on chamber walls surface including surface.Therefore, the sedimentation time in the cavity is longer or using secondary
When number is more, the deposit 40 accumulated on cavity inner wall surface can become very thick, easily fall off and generate dust particale 40a,
In the case where valve system 20 switchs 11 excessive velocities of gate, be easy to cause biggish impact force to cavity, dust particale 40a by
Influence to the impact external force can be easy to fall or raise, and then be attached on 30 surface of wafer, and 30 surface of wafer is caused to stain
And defect, the final yield rate for reducing product.
Currently, the dust particale pollution how reduced in the Wafer processing apparatus such as film deposition equipment has become semiconductor
One of Important Problems paid close attention in manufacturing field.
Utility model content
The purpose of this utility model is to provide a kind of Wafer processing apparatus, are able to extend the speed of genuine switch gate not
Adjustable valve system opens the opening time of the gate on cavity and/or closes the shut-in time of the gate, to reduce wafer
The attachment of surface dust particle, and then product yield is improved, reduce board cleaning frequency and production cost.
In order to solve the above technical problems, the utility model provides a kind of Wafer processing apparatus, comprising:
For placing the cavity of wafer, the side wall of the cavity is equipped with and can be turned on and pent gate；
It is arranged on the cavity side and the nonadjustable valve system of speed of genuine switch gate, the valve system includes
It cylinder, the valve film being arranged in the cylinder, the Pneumatic connecting rod being connect with the valve film and is connected to the cylinder multiple
Blow vent, the Pneumatic connecting rod connects the gate, for opening and closing the gate；And
Delay control device at least one described blow vent of the valve system, the delay control device are set
For controlling the air inlet of the blow vent or the speed of outlet, the unlatching that the valve system opens the gate is extended with valve system
Time and/or the extension valve system close the shut-in time of the gate.
Optionally, the delay control device is the adjustable mechanical valve of switching speed, and the mechanical valve is needle valve, cut-off
Valve, gate valve, plug valve, ball valve or butterfly valve.
Optionally, the delay control device is solenoid valve or the electronic valve with sensor.
Optionally, the valve system is opened the opening time of the gate and/or closes institute by the delay control device
The shut-in time for stating gate extends 1s~10s.
Optionally, the valve system further includes the valve deck for being set to the outside of the cylinder, and one end of the valve deck is fixed
It connects the Pneumatic connecting rod and stretches out one end outside the cylinder, the other end of the valve deck is fixedly connected with the gate, described
When valve deck rises, cavity described in the closing gate, the delay control device is arranged at the blow vent for outlet,
To extend the time that the valve deck rises, and then extend the shut-in time that the valve system closes the gate.
Optionally, the Wafer processing apparatus is film deposition equipment, etching apparatus, lithographic equipment, ion implantation device
Or diffusion furnace apparatus.
Optionally, the cavity is reaction chamber, transfer chamber, purge chamber, hothouse or cooling chamber.
The utility model also provides a kind of wafer processing method, using Wafer processing apparatus described in the utility model come pair
Wafer is handled, and the nonadjustable valve system of the speed for switching gate by genuine is being needed to open and/or close the crystalline substance
When justifying the gate on the cavity of processing equipment, the delay control device valve system passed through in the Wafer processing apparatus extends
The valve system opens the opening time of the gate and/or extends the shut-in time that the valve system closes the gate.
Optionally, the Wafer processing apparatus is film deposition equipment, to the wafer in the Wafer processing apparatus
When needing to take out the wafer after the completion of surface deposition film and film deposition, institute is extended by the delay control device
The valve system for stating film deposition equipment opens the opening time of the gate；And/or in the Wafer processing apparatus to
Before the crystal column surface deposition film, the closing that the valve system closes the gate is extended by the delay control device
Time.
Compared with prior art, the technical solution of the utility model has the advantages that
1, can by delay control device control genuine switch gate the nonadjustable valve system of speed cylinder into
Gas speed (pressurized control) or discouraged speed (release control) can control the valve system by delay control device and open
It opens the opening time of the gate on cavity and/or closes the shut-in time of the gate, such as by the shut-in time of the gate
3s is extended to from 0.8s, leads to deposition on cavity inner wall because closing gate causes greater impact power to cavity fastly very much to improve
The problem of object peels off reduces the attachment of crystal column surface dust particale, and then improves product yield, reduces board cleaning frequency and life
Produce cost.
2, original Wafer processing apparatus can be directly improved with lower cost, is set with reducing original wafer-process
The attachment of the surface dust particle of the wafer of standby output, and then product yield is improved, board cleaning frequency and production cost are reduced,
Its valve opening is unable to control suitable for genuine and closes the various wafer processors of the speed of the gate on cavity, i.e. cavity
Include not only reaction chamber, further includes transfer chamber, cooling chamber, purge chamber, hothouse etc..
Detailed description of the invention
Figure 1A is using the device structure schematic diagram opened when gate carries out film deposition in existing film deposition equipment.
Device structure schematic diagram when Figure 1B is closed shutter after the completion of film deposits.
Fig. 2 is the nonadjustable valve of speed of the genuine switch gate in the Wafer processing apparatus of an embodiment of the present invention
The attachment structure schematic diagram of mechanism and delay control device.
Fig. 3 is the structural schematic diagram (including into outgassing direction) when valve system shown in Fig. 2 opens gate.
Structural schematic diagram (including into outgassing direction) when Fig. 4 is valve system closed shutter shown in Fig. 2.
Fig. 5 A is the dust particale situation of the crystal column surface detected after existing film deposition equipment closed shutter；
Fig. 5 B be the utility model specific embodiment film deposition equipment closed shutter after detect crystal column surface it is micro-
Dirt particle situation；
Fig. 6 is that the speed of the genuine switch gate in the Wafer processing apparatus of another embodiment of the utility model is nonadjustable
The attachment structure schematic diagram of valve system and delay control device.
Wherein, appended drawing reference is as follows:
10- slide holder；11- cavity；12- gate；The nonadjustable valve system of speed of 20- genuine switch gate；200- gas
Cylinder；200a, 200b- gas chamber；201- valve film；202- Pneumatic connecting rod；203- valve deck；204,205- blow vent；30- wafer；40- chamber
Deposit on internal wall；The dust particale that 40a- is peeled off；50,60- postpones control device.
Specific embodiment
Figure 1A and Figure 1B are please referred to, utility model people is the study found that cause the post-depositional crystal column surface of film to have micronic dust
The reason of grain, is mainly: by after the wafer that film deposits is put into cavity 11, the closing of 20 closed shutter 12 of valve system
Speed is non-adjustable and closes too fast.The closing of gate 12 is too fast, will directly result in settling chamber's (i.e. cavity) by biggish impact
Power, so that the deposit 40 (i.e. dust particale 40a) around chamber walls and slide holder 10 is by biggish external impacts, easily
It falls off and flies upward, and then fall on 30 surface of wafer, and be attached on 30 surface of wafer, in turn result in the surface of wafer 30
Defect.
The utility model provides a kind of Wafer processing apparatus and wafer processing method, core concept are, opens in genuine
Increase by a delay control device at the nonadjustable valve system of the speed of barrier gate door, to reduce the lock on the valve system unlatching cavity
The opening speed of door and/or the closing velocity for closing the gate, and then extend the unlatching that the valve system opens the gate
Time and/or the shut-in time for closing the gate, the switch of the gate is avoided to cause biggish impact force to cavity, thus
The deposit on cavity inner wall is reduced to fall off and fly upward due to by biggish external impacts to the problem of attachment on crystal column surface,
And then product yield is improved, board cleaning frequency and production cost can also be reduced.
To be clearer and more comprehensible the purpose of this utility model, feature, with reference to the accompanying drawing to the technical side of the utility model
Case is described in detail, however, the utility model can be realized with different forms, it should not be to be confined to the implementation
Example.It should be noted that attached drawing is all made of very simplified form and using non-accurate ratio, only to conveniently, lucidly
Aid in illustrating the purpose of the utility model embodiment.
Fig. 2 and Fig. 3 are please referred to, an embodiment of the present invention provides a kind of Wafer processing apparatus, comprising: for placing crystalline substance
The nonadjustable valve system 20 of speed and a delay control device 50 of round cavity 11, genuine switch gate.The cavity
Having on 11 side wall (can be the side wall between bottom wall or roof or bottom wall and roof) can be turned on and pent lock
Door 12.The gate 12 can be with the gate of dead-beat on-off action or the gate of rocker-arm on-off action etc..The valve system 20
The side of the cavity is set, is the valve that can generate the on-off action of gate 12.In the present embodiment, the valve system 20 is
The valve system of dead-beat on-off action, including cylinder 200, valve film 201, Pneumatic connecting rod 202, valve deck 203 and two can be generated
A blow vent 204,205, and the laterally setting of valve film 201, the cylinder 200 is divided to for upper and lower two gas chambers 200a, 200b, ventilation
Mouthfuls 204 are arranged in the side of gas chamber 200b and are connected to gas chamber 200b, blow vent 205 be arranged in the side of gas chamber 200a and with gas
Room 200a connection.The valve deck 203 is arranged outside cylinder 200, and one end of Pneumatic connecting rod 202 is fixedly connected with valve film 201, another
End is fixedly connected with valve deck 203, and for realizing the linkage between valve film 201 and valve deck 203, the other end of valve deck 203 is fixedly connected
The gate 12, for driving the gate 12 to be switched.When the valve deck 203 rises, the gate 12 is closed to close
The cavity 11 when the valve deck 203 is fallen, opens the gate 12 to open the cavity 11.The blow vent 204 is in valve
Air inlet is used for when 20 starting gate 12 of mechanism, in 20 closing gate valve of valve system for losing heart (i.e. outlet), the blow vent 205
In 20 starting gate 12 of valve system for losing heart (i.e. outlet), air inlet, the delay are used in 20 closing gate valve of valve system
Control device 50 is arranged on the blow vent 204, and the shut-in time for extending 20 closed shutter 12 of valve system.Wherein,
Valve deck 203 is set between Pneumatic connecting rod 202 and gate 12, is conducive to the maintenance and replacement of gate 12 and valve system 20.Certainly, exist
In the other embodiments of the utility model, the setting of valve deck 203 also can be omitted, gate 12 is directly connected to Pneumatic connecting rod
On 202.
When needing to handle a wafer using the Wafer processing apparatus, needs first to place wafer into cavity, need at this time
Gate 12 is opened by the valve system 20, to open cavity 11, referring to FIG. 3, at this point, 204 air inlet of blow vent, ventilation
205 outlets of mouth (i.e. discharge air), and delay control device 50 can be failure to actuate at this moment, that is, keep 20 starting gate of valve system
12 original opening speed, 204 air inlet of blow vent increase the air pressure in gas chamber 200a, pneumatically connect so that valve film 201 drives
Bar 202 moves down, so that valve deck 203 is fallen, gate 12 enters opening state (being turned on), so that cavity 11 and the external world are even
Logical, wafer is able to be placed into cavity 11.Need to close cavity 11 later, with formed can on wafer deposition film vacuum
Environment, referring to FIG. 4,205 air inlet of blow vent is needed at this time, 204 outlet of blow vent (i.e. discharge air), the dress of delay control at this time
50 movements are set, to slow down the outlet speed (or for speed of losing heart) of blow vent 204, so that valve film 201 is slowly to gas chamber
200a is mobile, and valve film 201 drives Pneumatic connecting rod 202 slowly to move up, so that valve deck 203 slowly rises, gate 12 is slow
It closes, final plant closure cavity 11, so that cavity 11 becomes confined space, i.e., in this process, delay control device 50 slows down
Original closing velocity of 20 closed shutter 12 of valve system extends the shut-in time of gate 12, such as extends from original 0.8s
To 1s~10s, so that the impact force that gate 12 is engaged with the opening of cavity 11 becomes smaller (or even level off to 0), in cavity 11
Original dust particale can will not continue firmly to be adhered to due to the closing motion of gate 12 by greater impact power on wall
On cavity wall, i.e., it will not fall or be flown upward onto crystal column surface in the closing process of gate 12, therefore wafer table can be reduced
Planar defect.Later, by the vacuum pump pumping (not shown) of connection cavity 111, make to form a pressure difference between cavity 11 and the external world,
The pressure differential range is zero to one atmospheric pressure (1atm or 760torr), for example, when the pressure difference is an atmospheric pressure, the chamber
Body 11 is vacuum cavity.After the completion of the film deposition on wafer, (it can not schemed by the exhaust system of Wafer processing apparatus
Show) and the devices such as vacuum pump, first make the pressure in cavity 11 close to external atmosphere pressure, it then can be again by valve system
20 starting gates 12, and then cavity 11 is opened to take out wafer.
In the other embodiments of the utility model, during 20 starting gate 12 of valve system, it can also make
It must postpone the work of control device 50, be reduced with the intake velocity for controlling blow vent 204 by delay control device 50, so that valve machine
The opening speed of 20 starting gate 12 of structure is slack-off, so that the opening time of gate 12 extends, the opening time example after extension
For example 1s~10s, so as to avoid because valve system 20 open it is too fast due to cause dust particale on 11 inner wall of cavity by compared with
The problem of big impact force, and then the dust particale improved on cavity inner wall falls off and flies upward to the wafer being placed into cavity 11
Problem on surface.
In above-described embodiment, when delay control device 50 can be only used for extending the closing of 20 closed shutter 12 of valve system
Between, it not only can also be used to extend the opening time of 20 starting gate 12 of valve system, but also for extending 20 closed shutter 12 of valve system
Shut-in time.In the other embodiments of the utility model, delay control device 50 can be only used for extension valve system 20 and open
Open the opening time of gate 12.
Optionally, the delay control device 50 is the adjustable mechanical valve of switching speed, to reduce cost, the mechanical valve
For needle valve, shut-off valve, gate valve, plug valve, ball valve or butterfly valve.The delay control device 50 can also be solenoid valve or have
The electronic valve of sensor can directly be controlled by the controller of Wafer processing apparatus itself, prolong prolonged control to improve
The degree of automation of precision and Wafer processing apparatus.
The embodiment of the present invention Wafer processing apparatus can be film deposition equipment, etching apparatus, lithographic equipment, ion note
Enter equipment or diffusion furnace apparatus, accordingly, the cavity can be settling chamber, etching chamber, ion implantation chamber, furnace chamber, exposure room
Equal reaction chambers, are also possible to transfer chamber, purge chamber, hothouse or cooling chamber.Wherein, the film deposition equipment is, for example, chemistry
Vapor deposition (chemical vapor deposition, CVD) equipment or physics mutually deposit (physical vapor
Deposition, PVD) equipment, chemical vapor depsotition equipment is, for example, plasma auxiliary chemical vapor deposition (plasma
Enhanced chemical vapor deposition, PECVD) equipment or Metalorganic chemical vapor deposition (metal
Organic chemical vapor deposition, MOCVD) equipment, the Pvd equipment is, for example, that sputter is set
Standby or evaporated device.
Above-mentioned Wafer processing apparatus, due to extending the opening time of 20 starting gate 12 of valve system and/or extending
The shut-in time of 20 closed shutter 12 of valve system, therefore can be opened to avoid gate 12 too fast and/or close too fast and lead to chamber
The problem of dust particale on wall is by biggish impact force in vivo, can improve the dust particale on cavity inner wall and fall off and fly
The problem of raising, to reduce because the dust particale on cavity inner wall is attached to wafer surface defects caused by crystal column surface, together
When board whether need to clear up and will receive the case of surface defects of the wafer of Wafer processing apparatus product and influence, and the utility model
Wafer processing apparatus reduce wafer surface defects caused by the dust particale on cavity inner wall, therefore the crystalline substance of the utility model
The board cleaning frequency of circle processing equipment is reduced.The Wafer processing apparatus of the utility model can be adapted for equipment manufacturer
The case where delay control device assembling is carried out before the Wafer processing apparatus that dispatches from the factory, can be applicable in integrated circuit fabrication plant
Equipment is carried out on the basis of original Wafer processing apparatus improves situation.
Therefore, the case where delay control device assembling is carried out before the Wafer processing apparatus that dispatches from the factory for equipment manufacturer, this
Utility model provides a kind of wafer processing method based on the new Wafer processing apparatus for being assembled with delay control device, the wafer
Processing method is needing the nonadjustable valve system of the speed for switching gate by genuine to open and/or close the wafer-process
When gate on the cavity in equipment, extended described in valve system opens by the delay control device in the Wafer processing apparatus
The opening time of gate and/or the shut-in time for closing the gate.
In an embodiment of the utility model, when the Wafer processing apparatus is film deposition equipment, at the wafer
Reason method is membrane deposition method, please refers to Fig. 3 and Fig. 4, specifically includes the following steps:
Firstly, the valve system 20 (i.e. the speed of genuine switch gate is non-adjustable) by the Wafer processing apparatus opens lock
Door 12 is to open cavity 11, during starting gate 12,204 air inlet of blow vent of valve system 20, and 205 outlet of blow vent
(i.e. discharge air), the variation of air pressure makes so that valve film 201 drives Pneumatic connecting rod 202 to move down in gas chamber 200a and 200b
It obtains valve deck 203 to fall, gate 12 is opened with the opening speed of genuine, is finally fully opened, and make cavity 11 and the external world even
It is logical.
Then, a wafer is put into the cavity 11.
Then, the gate 12 is closed by the valve system 20, during closing gate 12, valve system 20
Blow vent 204 lose heart, 205 air inlet of blow vent (air), at the same postpone control device 50 control blow vent 204 discouraged speed
It reduces, the variation of air pressure is so that valve film 201 drives Pneumatic connecting rod 202 to move up, so that valve deck 203 in gas chamber 200a and 200b
It lifts, gate 12 enters closed state, so that cavity 11 and the external world disconnect and become confined space.Due to passing through delay control dress
Setting 50 reduces the discouraged speed of blow vent 204, therefore has slowed down the speed that valve film 201 moves up, and then extend gate
12 shut-in time, such as the shut-in time of gate 12 is extended into 1s~10s from 0.8s, so as to avoid gate 12 from closing
It is too fast and the problem of cause the dust particale on cavity inner wall to be fallen off or fly upward by biggish impact force, and then improve cavity
Dust particale on inner wall is attached to the problem of being placed on the intracorporal crystal column surface of chamber and leading to wafer surface defects.
Then, it the processing such as vacuumized, heated to the cavity 11, and be further passed through gaseous state into the cavity 11
The chemical gas containing atom needed for forming film or molecule, the raw reaction of chemical gas hybrid concurrency in cavity 11,
Finally assemble the solid film and gaseous products to be formed and wish to be formed in crystal column surface.
Later, it after film to be deposited reaches required thickness, can be arranged by the exhaust system of Wafer processing apparatus
Gas, so that the intracorporal pressure of chamber is restored to atmospheric pressure.
Finally, to open cavity, taking out again by 20 starting gate 12 of valve system and being deposited with required film on surface
Wafer.
When preferably, in above process, by 20 starting gate 12 of valve system, also controlled by delay control device 50
The intake velocity of blow vent 204 reduces, and to slow down the speed that valve film 201 moves down, and then extends the opening time of gate 12,
Such as the opening time of gate 12 is extended into 1s~10s from 0.8s, lead to chamber so as to avoid gate 12 from opening too fast
The problem of dust particale on internal wall is fallen off or flies upward by biggish impact force, and then improve the micronic dust on cavity inner wall
The problem of particle is attached on the crystal column surface placed in the cavity and leads to wafer surface defects.
Situation, this reality are improved for carrying out equipment on the basis of original Wafer processing apparatus in integrated circuit fabrication plant
A kind of wafer processing method is provided with a novel embodiment, it can be before carrying out wafer-process, first to genuine wafer-process
Equipment improves, and adds delay control device for it, carries out wafer-process later.Fig. 2 to Fig. 4 is please referred to, at the wafer
Reason method specifically includes the following steps:
Firstly, provide a Wafer processing apparatus, the Wafer processing apparatus have for place wafer cavity 11 and
It is arranged on the cavity side and genuine switchs the nonadjustable valve system 20 of speed of gate, is set on the side wall of the cavity 11
There is the gate 12 that can be opened and closed, the valve system 20 is used to control the switch of the gate 12, to control cavity 11 and the external world
On-off, the valve system 20 include cylinder 200, the valve film 201 being arranged in the cylinder 200, connect with the valve film 201
Pneumatic connecting rod 202 and the multiple blow vents 204,205 being connected to the cylinder 200, the Pneumatic connecting rod 202 be directly connected to or
It is being indirectly connected with the gate 12 by a valve deck 203, for opening and closing the gate 12；
Then, a delay control device is added at least one described blow vent (204 or 205) of the valve system 20
50；
Then, the gate 12 is opened by the valve system 20, to open the cavity 11, and by a wafer to be processed
It is put into the cavity 11, detailed process can be with reference to described above, and details are not described herein；
Then, the gate 12 is closed by the valve system 20, to close the cavity 11, and in the cavity 11
The wafer is processed, detailed process can be with reference to described above, and details are not described herein；
After processing is completed, the gate 12 is opened by the valve system 20, to open the cavity 11, and will be described
Wafer takes out from the cavity 11, and detailed process can be with reference to described above, and details are not described herein.
Wherein, in above-mentioned wafer processing method, when closing the gate 12 by the valve system 20, pass through institute
It states delay 50 valve system of control device and extends the shut-in time that the valve system 20 closes the gate 12, and/or, passing through
When stating valve system 20 and opening the gate 12, the valve system 20 is extended by the delay control device 50 and opens the gate
12 opening time.
Fig. 5 A and Fig. 5 B is please referred to, in order to further verify the embodiment of the utility model bring technical effect, Wo Menxian
The film deposition equipment of the nonadjustable valve system of speed of gate and its gate of control is switched to multiple with genuine using one
Wafer carries out film deposition, after every wafer is placed into cavity, is required to close on cavity by the valve system
Gate, and the shut-in time of the valve system is 0.8s, later, has been carried out to these crystal column surfaces for having carried out film deposition micro-
Dirt particle detections, testing result is as shown in Figure 5A, has on more wafer (i.e. dust particale data are more than upper control line) surface
Dust particale situation severely exceed.When we are in the nonadjustable valve of speed of the genuine switch gate of the film deposition equipment
A delay control device is added at mechanism and when the delay control device is used only for the closing by the valve system closed shutter
Between extend to 3s, i.e., film deposition is being carried out to multiple wafers using adding the film deposition equipment after delay control device,
After being placed into cavity of every wafer, it is also desirable to which the valve system closes the gate on cavity, and the valve system closes institute
The shut-in time for stating gate is 3s, later, has carried out dust particale detection to these crystal column surfaces for having carried out film deposition, has examined
Survey result is as shown in Figure 5 B, and the dust particale situation on all crystal column surfaces is (being in control line or less) up to standard,
Dust particale on every platelet circular surfaces is few, and wafer loss rate substantially reduces, and the yield of wafer greatly improves.Thus illustrate,
The Wafer processing apparatus and wafer processing method of the utility model, design is simple, only by the speed in genuine switch gate
Increase by a delay control device at nonadjustable valve system, to extend the opening time of valve system starting gate and/or close lock
The shut-in time of door, so that it may substantially reduce the generation of crystal column surface dust particale, and then improve product yield, and reduce board
Clear up frequency and production cost.
It should be noted that being illustrated by taking a delay control device 50 as an example, still in the various embodiments described above
The technical solution of the utility model is not merely defined in this, in some cases, the disengaging gas velocity degree of single one blow vent
Control is not able to satisfy entire valve system to the opening time of gate and the extension demand of shut-in time, therefore in the utility model
In other embodiments, referring to FIG. 6, when valve system 20 has multiple blow vent 204,205, it can be equal at each blow vent
One delay control device is set, so that the disengaging gas velocity degree at each blow vent is controlled (reduction), for example, valve system
20 include two blow vents 204,205, a delay control device 50 is arranged, at blow vent 204 to control blow vent for mouth
Another delay control device 60 is arranged in 204 intake velocity and outlet speed at blow vent 205, for mouth control ventilation
The intake velocity and outlet speed of mouth 205, to come in fact in delay control device 50 and the collective effect for postponing control device 60
The extension control of the shut-in time of the opening time and/or closed shutter of existing 20 starting gate of valve system.
It is cavity and the external world when opening gate with valve system 20 in the various embodiments described above in addition it is also necessary to illustrate
Cavity and the external world are illustrated for disconnecting when connection, 20 closed shutter of valve system, but the technical solution of the utility model
It is not merely defined in this, in the other embodiments of the utility model, gate is also possible to reversed gate, i.e. valve system 20 closes
Cavity and extraneous disconnection when cavity is in communication with the outside when closing gate, valve system 20 opens gate.
Foregoing description is only the description to the utility model preferred embodiment, not to any limit of the scope of the utility model
Fixed, any change, the modification that the those of ordinary skill in the utility model field does according to the disclosure above content belong to right and want
Seek the protection scope of book.
Claims (7)
1. a kind of Wafer processing apparatus characterized by comprising
For placing the cavity of wafer, the side wall of the cavity is equipped with and can be turned on and pent gate；
It is arranged on the cavity side and genuine switchs the nonadjustable valve system of speed of gate, the valve system includes gas
It cylinder, the valve film being arranged in the cylinder, the Pneumatic connecting rod being connect with the valve film and is connected to the cylinder multiple logical
Port, the Pneumatic connecting rod connects the gate, for opening and closing the gate；And
Delay control device at least one described blow vent of the valve system is set, and the delay control device is used for
Control the air inlet of the blow vent or the speed of outlet, with extend the valve system open the gate opening time and/or
Extend the shut-in time that the valve system closes the gate.
2. Wafer processing apparatus as described in claim 1, which is characterized in that the delay control device is that switching speed is adjustable
Mechanical valve, the mechanical valve be needle valve, shut-off valve, gate valve, plug valve, ball valve or butterfly valve.
3. Wafer processing apparatus as described in claim 1, which is characterized in that the delay control device is solenoid valve or has
The electronic valve of sensor.
4. Wafer processing apparatus as described in claim 1, which is characterized in that the delay control device opens the valve system
The opening time for opening the gate and/or the shut-in time for closing the gate extend 1s~10s.
5. Wafer processing apparatus as described in claim 1, which is characterized in that the valve system further includes being set to the cylinder
Outside valve deck, one end of the valve deck is fixedly connected with the Pneumatic connecting rod and stretches out one end outside the cylinder, the valve
The other end of lid is fixedly connected with the gate, when the valve deck rises, cavity described in the closing gate, and the delay control dress
It installs at the blow vent for outlet, to extend the time that the valve deck rises, and then extends the valve system and close
Close the shut-in time of the gate.
6. Wafer processing apparatus as described in claim 1, which is characterized in that the Wafer processing apparatus is that film deposition is set
Standby, etching apparatus, lithographic equipment, ion implantation device or diffusion furnace apparatus.
7. such as Wafer processing apparatus described in any one of claims 1 to 6, which is characterized in that the cavity is reaction chamber, passes
Send room, purge chamber, hothouse or cooling chamber.
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| CN201821876296.3U CN208923045U (en) | 2018-11-13 | 2018-11-13 | Wafer processing apparatus |
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| CN201821876296.3U CN208923045U (en) | 2018-11-13 | 2018-11-13 | Wafer processing apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118073248A (en) * | 2024-04-18 | 2024-05-24 | 粤芯半导体技术股份有限公司 | Method for detecting etching equipment and method for etching wafer |
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2018
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118073248A (en) * | 2024-04-18 | 2024-05-24 | 粤芯半导体技术股份有限公司 | Method for detecting etching equipment and method for etching wafer |
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