KR20070109298A - Semiconductor manufacturing device and method for transfering semiconductor substrates - Google Patents

Abstract

A semiconductor manufacturing apparatus and a semiconductor substrate transfer method using the same are provided to prevent a substrate from being polluted by particles when transferring the substrate between chambers by installing a buffer unit to store for a moment the transferred substrate. A semiconductor manufacturing apparatus comprises process chambers(400), a load lock chamber(300), a transfer robot(510), a transfer chamber(500) and a buffer unit(600). The load lock chamber takes substrates to be transferred to the process chambers. The transfer chamber is installed between the load lock chamber and the process chambers, and comprises the transfer robot for transferring the substrates between the load lock chamber and the process chambers. The buffer unit stores the substrate unloaded from the process chambers to the transfer chamber.

Description

Semiconductor manufacturing apparatus and transfer method of semiconductor substrate using the same {SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR TRANSFERING SEMICONDUCTOR SUBSTRATES}

1 is a schematic block diagram showing an example of a cluster type semiconductor manufacturing apparatus according to the prior art;

2 is a schematic structural diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention;

3 is a schematic cross-sectional view of the semiconductor manufacturing apparatus shown in FIG. 2;

4 is a schematic operation state diagram of the semiconductor manufacturing apparatus illustrated in FIGS. 2 and 3;

5 is a schematic structural diagram of a semiconductor manufacturing apparatus according to another embodiment of the present invention;

FIG. 6 is a schematic cross-sectional view of the semiconductor manufacturing apparatus shown in FIG. 5;

FIG. 7 is a schematic operation state diagram of the semiconductor manufacturing apparatus illustrated in FIGS. 5 and 6;

8 is a schematic structural diagram of a semiconductor manufacturing apparatus according to still another embodiment of the present invention;

9 is a schematic cross-sectional view of the semiconductor manufacturing apparatus shown in FIG. 8;

FIG. 10 is a schematic operation state diagram of the semiconductor manufacturing apparatus illustrated in FIGS. 8 and 9.

<Description of Symbols for Main Parts of Drawings>

100: load port 200: substrate transfer module

300: load lock chamber 400: process chamber

410: door 500: transfer chamber

510: transfer robot 600: buffer unit

610: buffer chamber 620: substrate support member

640: drive member

The present invention relates to a semiconductor manufacturing apparatus and method, and more particularly, to a cluster type semiconductor manufacturing apparatus and a transfer method of a semiconductor substrate using the same.

Generally, semiconductor devices are manufactured by depositing and patterning various materials on a substrate in a thin film form. To this end, different steps of different processes such as a deposition process, an etching process, a cleaning process, and a drying process are required. In each process, the substrate is mounted and processed in a process chamber that provides optimum conditions for the progress of the process.

In recent years, as the semiconductor devices become more compact and highly integrated, process precisions, complexity, and wafer caliber are required, and the semiconductor device manufacturing process is collectively processed in view of the increase in the throughput associated with the increase in the number of complex processes and the sheeting. A cluster type semiconductor manufacturing apparatus that can be used has attracted attention.

1 is a schematic diagram illustrating an example of a cluster type semiconductor manufacturing apparatus according to the prior art.

Referring to FIG. 1, the cluster type semiconductor manufacturing apparatus 1 includes a load port 10 in which a container 12 containing a plurality of substrates is placed, and a substrate transfer module 20 installed adjacent to the load port 10. ), A load lock chamber 30 receiving a substrate from the substrate transfer module 20 and maintaining the initial low vacuum state, a plurality of process chambers 40 for sheet-fed substrate processing, and a load lock chamber 30. And a transfer chamber 50 disposed between the process chambers 40.

The transfer chamber 50 is provided with a transfer device 60 for transferring a substrate between the process chambers 40 or between the process chambers 40 and the load lock chamber 30. The transfer device 60 has a drive part 62 installed on the bottom surface of the transfer chamber 50. The robot arm assembly 64 is rotatably coupled to the upper side of the driver 62. The robot arm assembly 64 is provided with first and second arm blades 66a and 66b of a dual blade type for supporting a substrate. Subsequently, a substrate to be processed is placed on the first arm blade 66a, and a substrate on which the processing is completed is placed on the second arm blade 66b.

A slit valve 42 is provided between the transfer chamber 50 and each of the process chambers 40, and the transfer chamber 50 and the process chamber are controlled by controlling the entry and exit of gas and impurities using the slit valve 42. The pressure between the 40 is controlled.

The slit valve 42 between the transfer chamber 50 and the process chambers 40 is opened to load the substrate to be processed into the process chamber 40, and the first arm blade 66a on which the substrate is seated is opened. When entering into the process chamber 40, due to the pressure difference between the transfer chamber 50 and the process chamber 40, the vortex phenomenon occurs from the transfer chamber 50 in the low vacuum state toward the process chamber 40 in the high vacuum state. Occurs.

However, since the dual blade type arm blades 66a and 66b are driven together in the same direction by the robot arm assembly 64, the second arm blade 66b on which the substrate on which the process is completed is seated is also processed in the process chamber ( 40) move to the side. At this time, the second arm blade 66b moves to an adjacent region of the slit valve 42 where the vortex phenomenon occurs, and particles due to vortex are generated on the surface of the processed substrate seated on the second arm blade 66b. There was a problem that causes process failure in subsequent processes.

Therefore, the present invention was created to solve the problem in view of the problems of the conventional semiconductor manufacturing apparatus as described above, the object of the present invention is the particle of the substrate by the vortex during substrate transfer between the process chamber and the transfer chamber Disclosed is a semiconductor manufacturing apparatus capable of preventing contamination and a method of transferring a semiconductor substrate using the same.

In order to achieve the above object, a semiconductor manufacturing apparatus according to the present invention comprises: process chambers; A load lock chamber receiving a substrate to be transferred to the process chambers; A transfer chamber disposed between the load lock chamber and the process chambers and having a transfer robot for transferring a substrate between the process chambers or between the process chambers and the load lock chamber; And a buffer unit for storing the substrate on which the processing process of being unloaded from the process chambers to the transfer chamber is carried out.

According to one feature of the invention, the buffer unit is preferably installed inside the transfer chamber, it is preferable to include a substrate support member on which the substrate on which the processing process transferred from the transfer robot is placed.

According to another feature of the invention, the buffer unit comprises a buffer chamber disposed adjacent to one side of the transfer chamber; And a substrate support member installed in the buffer chamber and supporting the substrate on which the processing process transferred to the buffer chamber by the transfer robot is performed.

According to one aspect of the invention, the buffer unit preferably further comprises a drive member for moving the substrate support member in the vertical direction.

Preferably, the drive member includes a cylinder that linearly reciprocates by the pressure of the working fluid.

According to an aspect of the present invention, there is provided a method of transferring a semiconductor substrate, the method comprising: transferring a first substrate from a process chamber to a transfer chamber; Loading the first substrate transferred to the transfer chamber into the buffer unit; Loading a second substrate transferred from the load lock chamber into the transfer chamber into the process chamber; Unloading the first substrate loaded in the buffer unit; And conveying the unloaded first substrate to the load lock chamber.

Hereinafter, a semiconductor manufacturing apparatus and a method of transferring a semiconductor substrate using the same according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

(Example 1)

2 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to an embodiment of the present invention, FIG. 3 is a schematic cross-sectional view of the semiconductor manufacturing apparatus illustrated in FIG. 2, and FIG. 4 is a semiconductor manufacturing apparatus illustrated in FIGS. 2 and 3. Is a schematic operation state diagram.

2 to 4, the cluster type semiconductor manufacturing apparatus according to the present embodiment includes a load port 100, a substrate transfer module 200, a load lock chamber 300, process chambers 400, and a transfer. Chamber 500.

In the load port 100, a container 110 loaded with a plurality of substrates to be processed in the process chambers 400 to be described later is placed by an automation system (not shown). The container 110 is a means for accommodating a plurality of substrates on which the same process is performed in a predetermined number of units and transferring the same to each process facility. A front opening carrier FOUP may be used.

The substrate transfer module 200 is disposed adjacent to the load port 100 on which the container 110 is placed. The substrate transfer module 200 transfers the substrate from the container 110 placed in the load port 100 to the load lock chamber 300 to be described later using the robot 210.

The load lock chamber 300 is disposed at the rear end of the substrate transfer module 200 to receive the substrate from the load port 100 by the substrate transfer module 200. When the transfer of the substrate to the load lock chamber 300 is completed, the controller (not shown) reduces the pressure of the inside of the load lock chamber 300 to the initial low vacuum state so that impurities do not enter the load lock chamber 300. .

A transfer chamber 500 to be described later is disposed adjacent to one side of the load lock chamber 300, and the process chambers 400 are arranged around the transfer chamber 500 in a predetermined arrangement. Doors 410 and 420 are installed between the transfer chamber 500, the process chambers 400, and the load lock chamber 300 to open and close an entrance and exit (not shown) formed to allow access of the substrate. The doors 410 and 420 block pressure between the chambers by intermittent entry and exit of gas and impurities between the transfer chamber 500, the process chambers 400, and the load lock chamber 300.

The process chambers 400 may be provided with a plurality of chambers for performing various substrate processes. For example, the process chambers 400 may be provided as a chamber for performing an etching process or a chamber for performing a strip process.

The transfer chamber 500 is disposed between the load lock chamber 300 and the process chambers 400 to transfer the substrate between the process chambers 400 or between the load lock chamber 300 and the process chambers 400. Do this. At least one transfer robot 510 for transferring a substrate is provided inside the transfer chamber 500.

The transfer robot 510 includes a drive 512, a robot arm assembly 514, and arm blades 516, 518. The driving unit 512 is installed on the bottom surface of the transfer chamber 500 and has driving means such as a stepping motor. The robot arm assembly 514 is rotatably coupled to the upper side of the driver 512. The robot arm assembly 514 is controlled by the drive 512. The robot arm assembly 514 may perform an operation for transferring a substrate by receiving power from the driving unit 512, and may also perform an upward or downward operation in the vertical direction. On both sides of the robot arm assembly 514 are first and second arm blades 516 and 518 of dual blade type for supporting a substrate, respectively. In the first arm blade 516, a first substrate W1 may be disposed, and in the second arm blade 518, a second substrate W2 may be disposed.

The buffer unit 600 is disposed at a position adjacent to the transfer robot 510 in the transfer chamber 500. The buffer unit 600 serves to temporarily store the substrate W1 in which the unloading process is performed from the process chambers 400 to the transfer chamber 500. The buffer unit 600 has a substrate supporting member 620 installed inside the transfer chamber 500, and the substrate supporting member 620 has a substrate W1 on which a processing process transferred from the transfer robot 510 is performed. Lose. The substrate supporting member 620 is raised or lowered in the up and down direction by the driving member 640 disposed below the substrate supporting member 620. As the driving member 640, a pneumatic cylinder or a hydraulic cylinder that linearly reciprocates by the pressure of the working fluid may be used, and a power transmission means using a motor may be used.

Referring to the process of transferring the semiconductor substrate between the chambers using the semiconductor manufacturing apparatus according to the present embodiment having the configuration as described above are as follows.

First, the second substrate W2 to be subjected to the substrate processing process is seated on the second arm blade 518 of the transfer robot 510 and transferred from the load lock chamber 300 to the transfer chamber 500. After the second substrate W2 is transferred into the transfer chamber 500, the first substrate W1 having undergone the substrate processing in the process chamber 400 is transferred to the first arm blade 516 of the transfer robot 510. It is seated and transferred to the transfer chamber 500. Then, the transfer robot 510 is rotated, and as shown in FIG. 3, the second substrate W2 is aligned to face the door 410 of the process chamber 400.

The first substrate W1 is then loaded from the first arm blade 516 into the substrate support member 620 of the buffer unit 600. After the first substrate W1 is loaded into the buffer unit 600, the transfer between the transfer chamber 500 and the process chamber 400 to bring the second substrate W2 to be processed into the process chamber 400. The door 410 is opened, the second arm blade 518 on which the second substrate W2 is seated enters the process chamber 400, and the second substrate W2 is loaded into the process chamber 400. At this time, due to the pressure difference between the transfer chamber 500 and the process chamber 400, a vortex phenomenon occurs from the transfer chamber 500 side in the low vacuum state to the process chamber 400 side in the high vacuum state. However, since the first substrate W1 subjected to the treatment process is loaded on the substrate support member 620 of the buffer unit 600 spaced apart from the region where the vortex phenomenon occurs, particle contamination caused by the vortex phenomenon is prevented. You can do it.

The first substrate W1 loaded in the buffer unit 600 is again unloaded by the first arm blade 516 and then conveyed to the load lock chamber 300.

(Example 2)

5 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to another embodiment of the present invention, FIG. 6 is a schematic cross-sectional view of the semiconductor manufacturing apparatus illustrated in FIG. 5, and FIG. 7 is a semiconductor manufacturing apparatus illustrated in FIGS. 5 and 6. Is a schematic operation state diagram.

Here, the same components as those shown in FIGS. 2 to 4 are denoted by the same reference numerals, and detailed description thereof will be omitted.

5 to 7, the buffer unit 600 has a buffer chamber 610 disposed adjacent to one side of the transfer chamber 500. The substrate support member 620 is installed inside the buffer chamber 610. The substrate supporting member 620 is provided with a substrate W1 on which a processing process transferred from the transfer robot 510 is performed. The substrate supporting member 620 is raised or lowered in the up and down direction by the driving member 640 disposed below the substrate supporting member 620. As the driving member 640, a pneumatic cylinder or a hydraulic cylinder that linearly reciprocates by the pressure of the working fluid may be used, and a power transmission means using a motor may be used.

Referring to the process of transferring the semiconductor substrate between the chambers using the semiconductor manufacturing apparatus according to another embodiment of the present invention having a buffer unit having the above configuration as follows.

First, the second substrate W2 to be subjected to the substrate processing process is seated on the second arm blade 518 of the transfer robot 510 and transferred from the load lock chamber 300 to the transfer chamber 500. After the second substrate W2 is transferred into the transfer chamber 500, the first substrate W1 having undergone the substrate processing in the process chamber 400 is transferred to the first arm blade 516 of the transfer robot 510. It is seated and transferred to the transfer chamber 500. Then, the transfer robot 510 is rotated so that the second substrate W2 is aligned to face the door 410 of the process chamber 400, as shown in FIG. 6.

Thereafter, the first arm blade 516 on which the first substrate W1 is seated enters the buffer chamber 610 of the buffer unit 600, and the first substrate W1 supports the substrate from the first arm blade 516. Loaded into member 620. After the first substrate W1 is loaded into the substrate support member 620 in the buffer chamber 610, the transfer chamber 500 and the transfer chamber 500 may be used to bring the second substrate W2 into the process chamber 400 to be processed. The door 410 between the process chambers 400 is opened, and the second arm blade 518 on which the second substrate W2 is seated enters the process chamber 400 so that the second substrate W2 is formed in the process chamber ( Brought in). At this time, due to the pressure difference between the transfer chamber 500 and the process chamber 400, a vortex phenomenon occurs from the transfer chamber 500 side in the low vacuum state to the process chamber 400 side in the high vacuum state. However, since the first substrate W1 subjected to the treatment process is loaded on the substrate support member 620 of the buffer unit 600 spaced apart from the region where the vortex phenomenon occurs, particle contamination caused by the vortex phenomenon is prevented. You can do it.

The first substrate W1 loaded on the substrate support member 620 in the buffer chamber 610 is again unloaded by the first arm blade 516 and then conveyed to the load lock chamber 300.

(Example 3)

8 is a schematic configuration diagram of a semiconductor manufacturing apparatus according to still another embodiment of the present invention, FIG. 9 is a schematic cross-sectional view of the semiconductor manufacturing apparatus illustrated in FIG. 8, and FIG. 10 is a semiconductor manufacturing apparatus illustrated in FIGS. 8 and 9. This is a schematic operational state diagram of the device.

Here, the same components as those shown in FIGS. 2 to 4 or 5 to 7 are denoted by the same reference numerals, and detailed description thereof will be omitted.

8 to 10, the transfer chamber 500 is disposed between the load lock chamber 300 and the process chambers 400 so as to be between the process chambers 400 or between the load lock chamber 300 and the process chambers ( It serves to transfer the substrate between the 400. At least one substrate transfer device 700 for transferring a substrate is provided in the transfer chamber 500.

The substrate transfer apparatus 700 includes a driver 710, robot arms 720a and 720b, and arm blades 730a and 730b. The drive unit 710 has drive means such as a stepping motor. The first robot arm 720a and the second robot arm 720b are connected to both sides of the driving unit 710, and the first and second robot arms 720a and 720b operate independently by the driving unit 710. This is controlled. A first arm blade 730a on which the transfer substrate is seated and supported is provided at an end of the first robot arm 720a, and a second arm blade 730b is provided at an end of the second robot arm 720b.

Each of the first and second robot arms 720a, 720b has drive link members 722, 722 ′ and driven link members 724, 724 ′. The drive link members 722, 722 ′ are connected to the drive 710 so as to be able to rotate in opposite directions with respect to the drive 710 on a plane parallel to the mounting surface of the substrate transfer device 700. One end of the driven link members 724, 724 'is rotatably coupled to one end of the drive link members 722, 722', and the other end of the driven link members 724, 724 'has a first mounting surface of the substrate. It is rotatably connected to both sides of the arm blade 730a. With this configuration, when the drive link members 722, 722 'rotate, the driven link members 724, 724' rotate around the hinge coupling axis of the drive link members 722, 722 'and the driven link members 724, 724'. The first arm blade 730a, which is connected to the driven link members 724, 724 ', makes a linear motion in its longitudinal direction.

Referring to the process of transferring the semiconductor substrate between the chambers using the semiconductor manufacturing apparatus according to another embodiment of the present invention provided with a substrate transfer apparatus having the above configuration as follows.

First, the second substrate W2 to be subjected to the substrate treatment process is seated on the second arm blade 730b of the substrate transfer apparatus 700 and is transferred from the load lock chamber 300 to the transfer chamber 500. After the second substrate W2 is transferred into the transfer chamber 500, the first substrate W1 having the substrate processing process in the process chamber 400 is the first arm blade 730a of the substrate transfer apparatus 700. It is seated in and transferred to the transfer chamber 500. And the substrate transfer apparatus 700 is rotated, as shown in FIG. 9, the second substrate W2 is aligned to face the door 410 of the process chamber 400.

Thereafter, the door 410 between the transfer chamber 500 and the process chamber 400 is opened to bring the second substrate W2 to be processed into the process chamber 400, and the second substrate W2 is seated. The second arm blade 730b enters the process chamber 400 and the second substrate W2 is loaded into the process chamber 400. At this time, due to the pressure difference between the transfer chamber 500 and the process chamber 400, a vortex phenomenon occurs from the transfer chamber 500 side in the low vacuum state to the process chamber 400 side in the high vacuum state. However, the first substrate W1 subjected to the processing process is mounted on and supported by the first arm blade 730a of the first robot arm 720a which is driven independently of the second robot arm 720b so that a vortex phenomenon occurs. Since it is spaced a certain distance, it is possible to prevent particle contamination caused by the vortex phenomenon.

Then, the first robot arm 720a is driven independently of the second robot arm 720b so that the first substrate W1 seated and supported by the first arm blade 730a of the first robot arm 720a is loaded lock. It is conveyed to the chamber 300.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

As described above, according to the present invention, it is possible to prevent particle contamination of the substrate due to vortices when the substrate is transferred between chambers in the semiconductor facility, and to prevent process defects in advance, thereby improving productivity of the semiconductor manufacturing process.

Claims (6)

Process chambers; A load lock chamber receiving a substrate to be transferred to the process chambers; A transfer chamber disposed between the load lock chamber and the process chambers and having a transfer robot for transferring a substrate between the process chambers or between the process chambers and the load lock chamber; And a buffer unit for storing a substrate on which a processing process of being unloaded from the process chambers into the transfer chamber is carried out. The method of claim 1, The buffer unit, And a substrate support member disposed inside the transfer chamber and on which the substrate on which the processing step transferred from the transfer robot has progressed is placed. The method of claim 1, The buffer unit, A buffer chamber disposed adjacent to one side of the transfer chamber; And a substrate support member installed in the buffer chamber, the substrate supporting member supporting the substrate on which the processing process transferred by the transfer robot into the buffer chamber has been performed. The method of claim 2 or 3, The buffer unit, And a drive member for moving the substrate support member in the vertical direction. The method of claim 4, wherein And the drive member comprises a cylinder which linearly reciprocates under the pressure of the working fluid. In the transfer method of a semiconductor substrate for transferring a substrate between chambers in a semiconductor facility, Transferring the first substrate from the process chamber to the transfer chamber; Loading the first substrate transferred to the transfer chamber into a buffer unit; Loading a second substrate transferred from the load lock chamber into the transfer chamber into the process chamber; Unloading the first substrate loaded in the buffer unit; Transferring the unloaded first substrate to the load lock chamber.

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