TWI753451B - Gas regulating device and plasma etching equipment using the same - Google Patents

Abstract

A gas conditioning device and plasma etching equipment using the same, the gas conditioning device is arranged in a vacuum reaction chamber of a semiconductor processing equipment, the gas conditioning device comprises at least one primary gas diffusion tank and at least one secondary gas diffusion tank, the primary gas diffusion The tank is connected with a plurality of gas inlets to obtain reaction gas, a plurality of gas outlets are arranged on the secondary gas diffusion tank to provide reaction gas into the vacuum reaction chamber, and a plurality of gas channels are arranged between adjacent gas diffusion tanks , in order to realize the gas communication between the gas diffusion tanks. In the present invention, by arranging a plurality of layers of gas diffusion grooves in the reaction chamber, and independently adjusting the gas flow in different radial angle ranges, 360 in the reaction chamber can be achieved. The uniform gas distribution in the circumferential direction ensures the uniformity of etching, improves the etching efficiency, and further improves the yield of the product.

Description

Gas regulating device and plasma etching equipment using the same

The invention relates to the field of semiconductor manufacturing, in particular to a gas conditioning device and a plasma etching device using the same.

The plasma etching equipment needs to input reactive gas and dissociate the reactive gas into plasma to realize the etching process of the wafer. In some plasma etching equipment, it is necessary to have a side air inlet device to compensate or adjust the etching uniformity. As shown in Figures 1 and 2, the side gas inlet device is usually arranged in the reaction chamber 1 and has one or two gas inlets 2. One end of the gas inlet 2 is connected to the gas supply device 5 through a gas pipeline, and the other side is connected to the gas supply device 5. One end is connected to the annular air groove 3 arranged in the side wall of the reaction chamber, and the gas enters the annular air groove 3 through the gas pipeline through the gas supply device 5 through the air inlet 2, and then passes through a plurality of nozzles 4 ( A nozzle or a gas injection hole enters the interior of the reaction chamber 1 . The distances between the different nozzles 4 or the gas injection holes on the side air inlet device and the air inlet 2 are not equal. The farther away from the nozzle 4 of the air inlet 2 or the gas injection hole, the smaller the gas pressure of the injected gas, which causes the uneven distribution of the gas in the circumferential direction inside the reaction chamber 1, thus affecting the uniformity and efficiency of etching. , In addition, the gas flow in different radial directions cannot be independently controlled, and the effective adjustment of the treatment process cannot be achieved.

The invention provides a gas adjusting device and a plasma etching device using the same, which can independently adjust the gas flow in different radial angle ranges, realize uniform gas distribution in the 360° circumferential direction in the reaction chamber, and ensure the etching uniformity, improve the etching efficiency, and improve the product yield.

In order to achieve the above object, the present invention provides a gas conditioning device, which is arranged in a semiconductor processing equipment and is used for delivering reaction gas to a vacuum reaction chamber of the semiconductor processing equipment. The gas conditioning device includes: a gas tank device, which includes a first-stage gas diffusion tank and the secondary gas diffusion tank, the primary gas diffusion tank is in gas communication with at least one gas inlet, and is used for the primary diffusion of the reaction gas introduced by the gas inlet; the secondary gas diffusion tank is provided with a plurality of gas outlets and the vacuum reaction chamber gas communication ; Gas communication between the primary gas diffusion tank and the secondary gas diffusion tank.

A plurality of gas channels are arranged between the primary gas diffusion tank and the secondary gas diffusion tank, and the gas channels are used for realizing gas communication between the primary gas diffusion tank and the secondary gas diffusion tank.

At least one intermediate gas diffusion tank is arranged between the primary gas diffusion tank and the secondary gas diffusion tank, and a plurality of gas channels are arranged between the intermediate gas diffusion tank, the primary gas diffusion tank and the secondary gas diffusion tank, and the gas channels are used to realize the intermediate gas The diffusion tank is in gas communication with the primary gas diffusion tank and the secondary gas diffusion tank.

The primary gas diffusion tank includes at least two primary gas diffusion regions isolated from each other, and each primary gas diffusion region is connected to at least one gas inlet.

The secondary gas diffusion tank includes at least two secondary gas diffusion regions isolated from each other, and each secondary gas diffusion region is in gas communication with the primary gas diffusion region through a gas channel.

At least one of the primary gas diffusion groove and the secondary gas diffusion groove is a continuous annular gas groove.

The air inlet, the gas channel and the air outlet are staggered in the radial direction to avoid the formation of a through-air channel, which ensures that the reaction gas can be fully diffused in the gas tank device and realizes the uniform distribution of the gas.

The width of the interval between the primary gas diffusion regions is less than or equal to the width of the gas channel, and less than or equal to the width of the gas outlet; The width of the spaced portion between the secondary gas diffusion regions is less than or equal to the width of the gas channel, and less than or equal to the width of the gas outlet.

The space between the primary gas diffusion areas, the space between the secondary gas diffusion areas, the air inlet, the gas channel and the air outlet are arranged radially staggered to avoid the formation of through-air channels and ensure that the reaction gas can be in the gas Fully diffused in the tank device to achieve uniform distribution of gas.

Each air inlet is provided with a pneumatic component and a flow control component. The pneumatic component is used to control the on-off of the gas entering the gas tank device, and the flow control component is used to realize the flow regulation of the reaction gas entering the gas tank device.

A heating device is arranged around the air tank device.

The gas conditioning device further includes a downwardly extending liner for avoiding deposition of contaminants on the sidewalls of the reaction chamber.

The gas outlet is a nozzle or a gas injection hole.

The semiconductor processing equipment is plasma etching equipment.

The present invention further provides a plasma etching equipment, the plasma etching equipment includes a vacuum reaction chamber, the vacuum reaction chamber includes a cylindrical reaction chamber side wall and a top insulating window, and a gas regulating device is arranged between the reaction chamber side wall and the top insulating window. The present invention disposes multiple layers of gas diffusion inside the reaction chamber Slots and independent regulation of gas flow in different radial angle ranges, 360 in the reaction chamber. The uniform gas distribution in the circumferential direction ensures the uniformity of etching, improves the etching efficiency, and further improves the yield of the product.

1,100: reaction chamber

2,21: Air intake

3: Annular air groove

4: Nozzle

5: Gas supply device

10: Gas supply device

21-1: First Air Inlet

21-2: Second Air Inlet

21-3: The third air intake

21-4: Fourth Air Inlet

31: Gas injection holes

41: Lining

101: First-stage gas diffusion tank

101-1: The first part of the first stage gas diffusion tank

101-2: The second part of the first stage gas diffusion tank

101-3: The third part of the first stage gas diffusion tank

101-4: Part IV Primary Gas Diffusion Tank

102: Second stage gas diffusion tank

102-1: The first part of the secondary gas diffusion tank

102-2: The second part of the secondary gas diffusion tank

102-3: The third part of the secondary gas diffusion tank

102-4: The fourth part of the secondary gas diffusion tank

103: Gas channel

104: Interval Section

105: Sidewall of the reaction chamber

110: Pedestal

115: Electrostatic chuck

120: Substrate

125: exhaust pump

130: Insulation window

140: Inductively coupled coil

145: RF Power Source

150: Gas Regulator

160: Plasma

501: Heating device

FIG. 1 is a schematic structural diagram of a side air intake device in the prior art.

FIG. 2 is a top cross-sectional view of the side air intake device in FIG. 1 .

FIG. 3 is a schematic diagram of an inductively coupled plasma etching apparatus applying a gas conditioning device provided by the present invention.

Fig. 4 is a top view of an embodiment of a gas regulating device provided by the present invention.

Fig. 5 is a top view of another embodiment of a gas regulating device provided by the present invention.

FIG. 6 is a side cross-sectional view of FIG. 5 .

The preferred embodiments of the present invention will be described in detail below according to FIG. 3 to FIG. 6 .

The invention provides a gas adjusting device, which is arranged in a vacuum reaction chamber of a semiconductor processing equipment, and realizes supplying reaction gas from the side wall of the reaction chamber.

As shown in FIG. 3, taking an Inductively Coupled Plasma (ICP) etching apparatus as an example, the plasma etching apparatus includes a vacuum reaction chamber 100, and the vacuum reaction chamber 100 includes a substantially cylindrical shape made of a metal material. The side wall 105 of the reaction chamber, an insulating window 130 is arranged above the side wall 105 of the reaction chamber, an inductive coupling coil 140 is arranged above the insulating window 130 , and the inductive coupling coil 140 is connected to the radio frequency power source 145 . A gas regulating device 150 is arranged in the side wall 105 of the reaction chamber, and the gas regulating device 150 is connected to the gas Body supply device 10 . The reactive gas in the gas supply device 10 enters the vacuum reaction chamber 100 through the gas conditioning device 150, and the radio frequency power of the radio frequency power source 145 drives the inductive coupling coil 140 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reactive gas is ionized to generate electricity. Slurry 160. A susceptor 110 is provided at a downstream position of the vacuum reaction chamber 100 , and an electrostatic chuck 115 is placed on the susceptor 110 for supporting and fixing the substrate 120 . The plasma 160 contains a large number of active particles such as electrons, ions, excited atoms, molecules and free radicals, and the above active particles can undergo various physical and chemical reactions with the surface of the substrate 120 to be processed, so that the morphology of the substrate surface changes. , that is, to complete the etching process. An exhaust pump 125 is further disposed below the vacuum reaction chamber 100 for discharging reaction by-products into the vacuum reaction chamber.

A gas conditioning device 150 provided by the present invention includes: a gas tank device, which includes at least two gas diffusion tanks, which are arranged in the form of concentric rings, the outermost gas diffusion tank is the closest to the side wall of the reaction chamber, and the outermost gas diffusion tank is the closest. It is connected with the gas inlet to obtain the reaction gas. The innermost gas diffusion tank has the farthest distance from the side wall of the reaction chamber. At least two gas channels are arranged between the diffusion grooves to realize gas communication between the gas diffusion grooves, so as to realize the uniform diffusion and distribution of the reaction gas from the outer gas diffusion groove to the inner gas diffusion groove; at least two air inlets One end of the air inlet is connected to the gas supply device, and the other end is connected to the outermost gas diffusion tank, which is used to guide the reaction gas in the gas supply device into the gas tank device; at least two gas outlets are arranged in the innermost gas diffusion tank On the tank, it is used to send the reaction gas in the gas tank device into the reaction chamber, the gas outlet can be set as a nozzle or a gas injection hole, and all the gas outlets can be evenly distributed along the 360° circumferential direction, for example, assuming a nozzle or gas injection If the number of holes is n, the circumferential angle between every two adjacent nozzles or gas injection holes is (360°)/n. The air outlets can also be distributed unevenly as required. For example, in a certain radial range (such as 45°~60°), it is necessary to increase the amount of gas entering, and then more air outlets can be provided in the radial range.

Further, the gas diffusion tank may be a complete annular gas diffusion tank, that is, the inside of the gas diffusion tank is completely connected. In one embodiment, the gas diffusion tank may also include at least two fan annular gas diffusion tanks, all of which The fan annular gas diffusion grooves form a ring, but the fan annular gas diffusion grooves are not connected to each other, and have a space between them. The width of the space should not exceed the width of the gas channel, nor exceed the nozzle or gas jet. The width of the hole, so as to ensure that the interval between all the fan-shaped gas diffusion grooves is not too large, and the interval part should also be arranged radially staggered with the gas channel and nozzle (or gas injection hole), due to the gas diffusion groove at the end of the groove. The gas flow rate may be relatively slow, so avoid setting the gas channel and nozzle (or gas injection hole) at the end of the gas diffusion tank, so as to better ensure the uniform diffusion and flow of the reaction gas in the gas tank device. For the outermost gas diffusion tank, it must be ensured that each fan annular gas diffusion tank forming the outermost gas diffusion tank must be connected to at least one air inlet.

As shown in FIG. 4, in an embodiment of the present invention, the gas tank device is arranged in the reaction chamber 100 of the ICP etching equipment, and the gas tank device includes two-stage gas diffusion tanks, which are distributed on the same plane and are concentric circles. Arranged in ring form. The outermost gas diffusion tank 101 is close to the outer wall of the reaction chamber 100 and is referred to as the first-stage gas diffusion tank, and the innermost gas diffusion tank 102 is correspondingly referred to as the second-level gas diffusion tank. The first-stage gas diffusion tank 101 and the second-stage gas diffusion tank 102 are both complete annular gas diffusion tanks. The interior of the first-stage gas diffusion tank 101 is completely connected, and the interior of the second-stage gas diffusion tank 102 is also completely connected. of. Four air inlets 21 are provided, one end of each air inlet 21 is connected to the gas supply device through a gas pipeline, and the other end is connected to the first-stage gas diffusion tank 101. The circumferential angle of the interval between adjacent air inlets 21 is 90°. Each air inlet is provided with a pneumatic component and a flow control component. The pneumatic component is used to control the on-off of the gas entering the gas tank device, and the flow control component is used to realize the flow regulation of the reaction gas entering the gas tank device. Eight gas channels 103 are arranged between the first-stage gas diffusion tank 101 and the second-stage gas diffusion tank 102 , and the reactive gas in the first-stage gas diffusion tank 101 enters the second-stage gas diffusion tank 102 through the gas channels 103 . Try to stagger the gas channel 103 and the air inlet 21 in the radial direction It is arranged to prevent the air inlet 21 and the gas channel 103 from forming a through-air channel, which prevents the reaction gas from fully diffusing in the first-stage gas diffusion tank 101 . Sixteen gas injection holes 31 are arranged on the second-stage gas diffusion groove 102 , and the gas injection holes 31 are evenly distributed along a 360° circumferential direction, and the circumferential angle between two adjacent gas injection holes 31 is 22.5°. The gas injection holes 31 and the gas passages 103 are arranged alternately in the radial direction as far as possible to avoid the formation of through passages between the gas injection holes 31 and the gas passages 103 , and prevent the reaction gas from fully diffusing in the second-stage gas diffusion groove 102 .

The reaction gas in the gas supply device enters the first-stage gas diffusion tank 101 through the four air inlets 21 , and the reaction gas is blocked by the gas diffusion tank walls of the first-stage gas diffusion tank 101 . During the diffusion process, the reactive gas enters the second-stage gas diffusion tank through the gas channel 103 , and is also blocked by the gas diffusion tank wall of the second-stage gas diffusion tank 102 . , and finally the reaction gas enters the reaction chamber 100 through the gas injection hole 31 .

After the reaction gas is diffused through the two-stage gas diffusion groove, a high uniformity can be obtained in the 360° circumferential direction. The air inlet 21, the gas channel 103 and the gas injection hole 31 are staggered in the radial direction to avoid the formation of through-air channels. , to ensure that the reaction gas can be fully diffused in the two-stage gas diffusion tank, and finally achieve uniform distribution of gas density in the second-stage gas diffusion tank 102. Finally, when the reaction gas in the second-stage gas diffusion tank 102 penetrates the gas injection When the hole 31 enters the reaction chamber 100 , uniform gas distribution is realized in the 360° circumferential direction in the reaction chamber 100 , which ensures a uniform etching speed and improves the product yield.

In order to realize the independent control of the amount of gas entering the reaction chamber in different radial directions, the gas diffusion tank of the same stage can be divided into different regions, and independent gas flow control is performed for each isolated region, so as to realize the control of different gas in the reaction chamber. The independent adjustment of the gas flow in the radial direction can better adjust the gas distribution in the reaction chamber and achieve uniform etching. As shown in FIG. 5, in another embodiment of the present invention, the gas tank device is arranged in the reaction chamber 100 of the ICP etching equipment, and the entire gas tank device is evenly divided into four parts Each part occupies a circumferential angle of 90°, and each part contains two-stage gas diffusion grooves, which are distributed on the same plane and arranged in the form of concentric fan rings. The radial angle range corresponding to the first part of the air groove device is 90°~180°, the radial angle range corresponding to the second part air groove device is 0°~90°, and the radial angle range corresponding to the third part air groove device is 270°~360°, the radial angle range corresponding to the fourth part of the air groove device is 180°~270°. The outermost gas diffusion tank is close to the outer wall of the reaction chamber 100 and is called a primary gas diffusion tank, and the innermost gas diffusion tank is correspondingly called a secondary gas diffusion tank. All fan-shaped gas diffusion grooves in each layer of gas diffusion grooves together form a complete ring, that is, all fan-shaped primary gas diffusion grooves together form a complete ring, and all fan-shaped secondary gas diffusion grooves form a complete ring together. The grooves also together form a complete torus. The first part of the gas tank device includes a first part of the primary gas diffusion tank 101-1 and a first part of the second stage gas diffusion tank 102-1, and the first part of the primary gas diffusion tank 101-1 and the first part of the second stage gas diffusion tank 102-1 are both fans An annular gas diffusion tank, two gas channels 103 are arranged between the first part of the primary gas diffusion tank 101-1 and the first part of the secondary gas diffusion tank 102-1, and the first part of the primary gas diffusion tank 101-1 is connected to the first air inlet 21 -1, the first part of the secondary gas diffusion tank 102-1 is provided with four gas injection holes 31. The second partial gas tank device includes a second partial primary gas diffusion tank 101-2 and a second partial secondary gas diffusion tank 102-2, a second partial primary gas diffusion tank 101-2 and a second partial secondary gas diffusion tank 102 -2 are fan annular gas diffusion grooves, two gas channels 103 are arranged between the second part of the primary gas diffusion groove 101-2 and the second part of the secondary gas diffusion groove 102-2, and the second part of the primary gas diffusion groove 101- 2 is connected to the second air inlet 21-2, and four gas injection holes 31 are provided on the second part of the secondary gas diffusion tank 102-2. The third part of the gas tank device includes a third part of the primary gas diffusion tank 101-3 and a third part of the secondary gas diffusion tank 102-3, a third part of the primary gas diffusion tank 101-3 and a third part of the secondary gas diffusion tank 102 -3 are fan annular gas diffusion tanks, two gas channels 103 are arranged between the third part of the primary gas diffusion tank 101-3 and the third part of the secondary gas diffusion tank 102-3, and the third part of the primary gas diffusion tank 101- 3 is connected to the third air inlet 21-3, and four gas injection holes 31 are provided on the third part of the secondary gas diffusion tank 102-3. The fourth part of the gas tank device includes the fourth part of the primary gas diffusion tank 101-4 and the fourth part of the second stage gas diffusion tank 102-4, the fourth part of the first stage gas diffusion tank 101-4 and the fourth part of the second stage gas diffusion tank 102-4 are fan annular gas diffusion tanks, the fourth part of the first stage gas diffusion tank 101-4 and the fourth part of the second stage gas diffusion tank 102-4 Two gas channels 103 are arranged between the gas diffusion grooves 102-4, the fourth part of the primary gas diffusion groove 101-4 is connected to the fourth air inlet 21-1, and the fourth part of the secondary gas diffusion groove 102-4 is provided with four gas channels 103. A gas injection hole 31 . The first part of the first stage gas diffusion tank 101-1, the second part of the first stage gas diffusion tank 101-2, the third part of the first stage gas diffusion tank 101-3 and the fourth part of the first stage gas diffusion tank 101-4 form a ring, but the first part The first stage gas diffusion tank 101-1, the second part of the first stage gas diffusion tank 101-2, the third part of the first stage gas diffusion tank 101-3 and the fourth part of the first stage gas diffusion tank 101-4 are not connected to each other, There is a spacer 104 between them, and the width of the spacer 104 is set to a small width, which may not exceed the width of the gas channel 103, so as to ensure that the space between all the fan-shaped gas diffusion grooves will not be too large, and ensure that the gas diffusion grooves are at 360° Uniform gas passages are arranged in the circumferential direction, and the spacer 104 should also be arranged radially staggered with the gas passages 103. Since the gas flow rate at the end of the gas diffusion groove may be relatively slow, avoid setting the gas passages 103 in the gas diffusion groove. The end of the tank, so that the uniform diffusion and flow of the reaction gas in the gas diffusion tank can be better ensured. The first part of the secondary gas diffusion groove 102-1, the second part of the secondary gas diffusion groove 102-2, the third part of the secondary gas diffusion groove 102-3 and the fourth part of the secondary gas diffusion groove 102-4 form a ring , but the first part of the secondary gas diffusion tank 102-1, the second part of the secondary gas diffusion tank 102-2, the third part of the secondary gas diffusion tank 102-3 and the fourth part of the secondary gas diffusion tank 102-4 are mutually They are not connected with each other, and there is an interval portion 104 between them. The width of the interval portion 104 should be set to a small width, which may not exceed the width of the gas injection hole 31, so as to ensure that all the fan-shaped gas diffusion grooves are not spaced apart from each other. will be too large, and the spacer portion 104 should also be arranged radially staggered with the gas injection holes 31. Since the gas flow rate at the end of the gas diffusion groove may be relatively slow, avoid setting the gas injection holes 31 at the end of the gas diffusion groove, so that It can better ensure the uniform diffusion and flow of the reaction gas in the gas diffusion tank. Each air inlet is provided with a pneumatic component and a flow control component. The pneumatic component is used to control the on-off of the gas entering the air tank device, and the flow control component is used to realize the intake air. The flow rate adjustment of the reaction gas in the tank device. As far as possible, the gas channel 103 and the gas inlet are arranged staggered in the radial direction to prevent the gas inlet and the gas channel 103 from forming a through-air channel, which prevents the reaction gas from fully diffusing in the primary gas diffusion tank. The sixteen gas injection holes 31 are evenly distributed along a 360° circumferential direction, and the circumferential angle between two adjacent gas injection holes 31 is 22.5°. The gas injection holes 31 and the gas passages 103 are arranged alternately in the radial direction as far as possible to avoid the formation of through passages between the gas injection holes 31 and the gas passages 103 and hinder the full diffusion of the reaction gas in the secondary gas diffusion tank.

The reaction gas in the gas supply device enters the gas tank device of each part through each air inlet respectively and is distributed into the reaction chamber. Specifically, for the first part of the gas tank device, the reactive gas in the gas supply device enters the first part of the primary gas diffusion tank 101-1 through the first air inlet 21-1, and the reactive gas is subjected to the first part of the primary gas diffusion tank 101-1. The gas diffusion tank wall is blocked by the first part of the first-stage gas diffusion tank 101-1. During the diffusion process, the reaction gas enters the first part of the second-stage gas diffusion tank 102-1 through the gas channel 103, and is also affected by the first part of the second gas diffusion tank 102-1. The barrier of the gas diffusion groove wall of the primary gas diffusion groove 102-1 transmits and diffuses in the first part of the secondary gas diffusion groove 102-1, and finally the reaction gas enters the reaction chamber 100 through the gas injection hole 31. By controlling the pneumatic components on the first air inlet 21-1 to control the gas on/off at a radial angle of 90°~180°, and by controlling the flow control components on the first air inlet 21-1 to adjust the 90°~ Gas flow over 180° radial angle. If it is necessary to further increase the gas flow rate and flow velocity within the radial angle range corresponding to the first part of the gas groove device, the number of the gas injection holes 31 provided on the first part of the secondary gas diffusion groove 102-1 can be increased, for example, if it is necessary to increase If the gas flow is within the angular range of 90°~120°, a plurality of gas injection holes 31 can be added at the corresponding positions on the first part of the secondary gas diffusion groove 102-1 corresponding to this angle range to increase the gas injection amount. Similarly, for the second part of the gas tank device, the reactive gas in the gas supply device enters the second part of the primary gas diffusion tank 101-2 through the second gas inlet 21-2, and the reactive gas is subjected to the second part of the primary gas diffusion tank 101. -2 is blocked by the wall of the gas diffusion tank, and the diffusion is transmitted in the second part of the primary gas diffusion tank 101-2. During the diffusion process, the reaction gas enters the second part of the secondary gas diffusion tank 102-2 through the gas channel 103, and the same received the second The barrier of the gas diffusion groove wall of the second-stage gas diffusion groove 102-2 transmits and diffuses in the second part of the secondary gas diffusion groove 102-2, and finally the reaction gas enters the reaction chamber 100 through the gas injection hole 31. By controlling the pneumatic components on the second air inlet 21-2 to control the gas on/off at the radial angle of 180°~270°, and by controlling the flow control components on the second air inlet 21-2 to adjust the 180°~ Gas flow over 270° radial angle. If it is necessary to further increase the gas flow and flow rate within the radial angle range corresponding to the second part of the gas groove device, the number of the gas injection holes 31 provided on the second part of the secondary gas diffusion groove 102-2 can be increased. For the third part of the gas tank device, the reactive gas in the gas supply device enters the third part of the first-stage gas diffusion tank 101-3 through the third gas inlet 21-3, and the reaction gas is subjected to the third part of the first-stage gas diffusion tank 101-3. The barrier of the gas diffusion tank wall transmits and diffuses in the third part of the primary gas diffusion tank 101-3. During the diffusion process, the reactive gas enters the third part of the secondary gas diffusion tank 102-3 through the gas channel 103, and is also affected by the third part of the secondary gas diffusion tank 102-3. Part of the secondary gas diffusion groove 102-3 is blocked by the gas diffusion groove walls, and the third part of the secondary gas diffusion groove 102-3 transmits and diffuses, and finally the reaction gas enters the reaction chamber 100 through the gas injection hole 31. By controlling the pneumatic components on the third air inlet 21-3 to control the gas on-off at the radial angle of 270°~360°, and by controlling the flow control components on the third air inlet 21-3 to adjust the 270°~ Gas flow over a 360° radial angle. If it is necessary to further increase the gas flow and flow velocity within the radial angle range corresponding to the third part of the gas groove device, the number of the gas injection holes 31 provided on the third part of the secondary gas diffusion groove 102-3 can be increased. For the fourth part of the gas tank device, the reaction gas in the gas supply device enters the fourth part of the first-stage gas diffusion tank 101-4 through the fourth gas inlet 21-4, and the reaction gas is subjected to the fourth part of the first-stage gas diffusion tank 101-4. The barrier of the gas diffusion tank wall transmits and diffuses in the fourth part of the primary gas diffusion tank 101-4. During the diffusion process, the reactive gas enters the fourth part of the secondary gas diffusion tank 102-4 through the gas channel 103, and is also affected by the fourth part of the second gas diffusion tank 102-4. Part of the secondary gas diffusion groove 102-4 is blocked by the gas diffusion groove walls, and the fourth part of the secondary gas diffusion groove 102-4 transmits and diffuses, and finally the reaction gas enters the reaction chamber 100 through the gas injection hole 31. By controlling the pneumatic components on the fourth air inlet 21-4 to control the gas on-off at the radial angle of 0°~90°, by controlling the flow control components on the fourth air inlet 21-4 to adjust the 0°~ 90° radial angle gas flow. If it is necessary to further increase the gas flow and flow velocity within the radial angle range corresponding to the fourth part of the gas groove device, the number of the gas injection holes 31 provided on the fourth part of the secondary gas diffusion groove 102-4 can be increased.

In addition to dividing the first-stage gas diffusion tank into four regions in the above-mentioned embodiment, in other embodiments, the first-stage gas diffusion tank can be further divided into two, three, or more than four regions. The primary gas diffusion area is all connected with an air inlet, and parameters such as gas flow and pressure entering the primary gas diffusion area can be independently controlled. Correspondingly, each primary gas diffusion area is matched with the primary and secondary gas diffusion areas. By setting separate gas diffusion areas, the air flow rate of different areas can be adjusted in the radial direction in the reaction chamber, and can be matched with other substrate processing. parameters, the uniformity of the substrate processing is adjusted, and the problem that the edge region of the substrate is difficult to be processed uniformly at different phase angles in the prior art is solved.

As shown in FIG. 5 , a heating device 501 is arranged around the gas tank device, and the heating device 501 can control the temperature of the reaction gas to prevent the reaction gas from depositing in the gas diffusion tank. The heating device 501 can be continuously arranged around the gas diffusion tank. In other embodiments, the heating device 501 can also be arranged in different regions. For example, the heating device can be arranged in a plurality of regions according to the partitioned arrangement of the primary gas diffusion tank. To further improve the independent control of different gas diffusion regions.

As shown in FIG. 6, the gas conditioning device further includes a downwardly extending liner 41 for avoiding deposition of contaminants on the sidewalls of the reaction chamber. In this embodiment, the setting of the gas regulating device and the inner liner 41 is integrally formed, which can reduce the provision of a protective coating between the gas regulating device and the inner liner, and reduce the RF transmission loss in the reaction chamber.

After the reaction gas is diffused through at least two stages of gas diffusion grooves and the gas flow rate within a certain radial angle range is independently adjusted, a high uniformity can be obtained in the 360° circumferential direction, and the reaction chamber 100 can achieve uniformity in the 360° circumferential direction. The best gas distribution ensures uniform etching speed and improves product yield. In the present invention, multi-layer gas diffusion grooves are arranged inside the reaction chamber, and different radial angle ranges are applied. The gas flow in the enclosure is independently adjusted, and uniform gas distribution is achieved in the 360° circumferential direction in the reaction chamber, which ensures the uniformity of etching, improves the etching efficiency, and improves the yield of the product.

While the content of the present invention has been described in detail with reference to the above preferred embodiments, it should be recognized that the above description should not be construed as limiting the present invention. Various modifications and alternatives to the present invention will be apparent to those of ordinary skill in the art upon reading the foregoing disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.

21: Air intake

31: Gas injection holes

100: reaction chamber

101: First-stage gas diffusion tank

102: Second stage gas diffusion tank

103: Gas channel

Claims (13)

A gas conditioning device for conveying reaction gas into the vacuum reaction chamber from a horizontal radial angle of a vacuum reaction chamber of a semiconductor etching equipment, wherein the gas conditioning device comprises: a gas tank device, which comprises a first-stage gas diffusion tank and a primary and secondary gas diffusion tank; the primary gas diffusion tank includes at least two arc-shaped primary gas diffusion regions isolated from each other, and each of the arc-shaped primary gas diffusion regions is in gas communication with at least one air inlet for the The reaction gas introduced by the air inlet is diffused in the first stage; the second stage gas diffusion tank includes at least two arc-shaped second stage gas diffusion regions isolated from each other, and each of the second stage gas diffusion regions is provided with a plurality of gas outlets and the vacuum reaction chamber. Gas communication; gas communication between each of the primary gas diffusion regions and the secondary gas diffusion regions. The gas conditioning device according to claim 1, wherein a plurality of gas channels are arranged between the primary gas diffusion tank and the secondary gas diffusion tank, and the gas channels are used to realize the primary gas diffusion tank and the secondary gas diffusion tank gas connection. The gas conditioning device according to claim 1, wherein at least one intermediate gas diffusion tank is arranged between the primary gas diffusion tank and the secondary gas diffusion tank, and the intermediate gas diffusion tank is connected to the primary gas diffusion tank and the secondary gas diffusion tank. A plurality of gas channels are arranged between the diffusion tanks, and the gas channels are used to realize gas communication between the intermediate gas diffusion tank, the primary gas diffusion tank and the secondary gas diffusion tank. The gas conditioning device according to claim 1, wherein at least one of the primary gas diffusion groove and the secondary gas diffusion groove is a continuous annular gas groove. The gas conditioning device according to claim 2, wherein the air inlet, the gas channel and the air outlet are arranged alternately in the radial direction, avoiding the formation of through-air channels, ensuring that the reaction gas can be fully diffused in the gas tank device, and achieving Uniform distribution of gas. The gas conditioning device according to claim 1, wherein the width of the interval between the primary gas diffusion regions is less than or equal to the width of the gas passage, and is less than or equal to the width of the gas outlet; The width of the spaced portion is less than or equal to the width of the gas passage, and less than or equal to the width of the gas outlet. The gas conditioning device as claimed in claim 6, wherein the spaced portions between the primary gas diffusion regions, the spaced portions between the secondary gas diffusion regions, the gas channel and the gas outlet are staggered in the radial direction, The formation of through-air channels is avoided, so as to ensure that the reaction gas can be fully diffused in the gas tank device, so as to realize the uniform distribution of the gas. The gas conditioning device according to claim 1, wherein each of the air inlets is provided with a pneumatic component and a flow control component, the pneumatic component is used to control the on-off of the gas entering the air tank device, and the flow control component is used for In order to realize the flow regulation of the reaction gas entering the gas tank device. The gas conditioning device of claim 1, wherein a heating device is disposed around the gas tank device. The gas conditioning device of claim 1, wherein the gas conditioning device further comprises a downwardly extending liner for preventing contaminants from depositing on the sidewall of the reaction chamber. The gas regulating device of claim 1, wherein the gas outlet is a nozzle or A gas injection hole. The gas conditioning apparatus of claim 1, wherein the semiconductor processing equipment is a plasma etching equipment. A plasma etching device, wherein the plasma etching device includes a vacuum reaction chamber, the vacuum reaction chamber includes a cylindrical reaction chamber sidewall and a top insulating window, and the cylindrical reaction chamber sidewall and the top insulating window are arranged as follows: A gas regulating device according to any one of claim 1 to claim 12.

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