CN113330142A

CN113330142A - Gas inlet device for a CVD reactor

Info

Publication number: CN113330142A
Application number: CN201980089790.6A
Authority: CN
Inventors: M.科尔伯格; F.鲁达耶维特; M.穆基诺维奇; M.普菲斯特勒
Original assignee: Aixtron SE
Current assignee: Aixtron SE
Priority date: 2018-11-28
Filing date: 2019-11-27
Publication date: 2021-08-31
Also published as: KR20210094019A; DE102018130139A1; EP3887569A2; JP2022510900A; WO2020109361A2; JP7461351B2; TW202035777A; WO2020109361A3; JP2024079752A

Abstract

The invention relates to a gas inlet device for a CVD reactor (1), comprising a gas inlet device that can be fastened to a fastening section (3) having a gas supply line (5), the gas inlet device having a plurality of gas distribution layers that are arranged one above the other and each have a gas distribution wall (6) with a gas outlet opening (7), the gas outlet openings (7) being in fluid communication with a gas distribution chamber (8) that is enclosed by the gas distribution wall (6), wherein gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) with inlets (10) open into the gas distribution chamber (8), and the gas distribution chambers (8) of different gas distribution layers are separated from one another by a separating base (11). According to the invention, a flow barrier is provided between the inlet opening (10) of the inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) and the gas distribution wall (6). Furthermore, the gas inlet device is formed by a plurality of disk-shaped gas distributors (4.1, 4.2, 4.3, 4.4) which are arranged one above the other.

Description

Gas inlet device for a CVD reactor

Technical Field

The invention relates to a gas inlet device for a CVD reactor, comprising a gas inlet device that can be fastened to a fastening section with a gas supply line, the gas inlet device having a plurality of gas distribution layers that are arranged one above the other and each have a gas distribution wall with a gas outlet opening that is in fluid communication with a gas distribution chamber enclosed by the gas distribution wall, wherein gas inlet channels open into the gas distribution chambers, the gas distribution chambers of the gas distribution layers being separated from one another by a separating floor, wherein the gas inlet channels are arranged in particular in a cylindrical central section of the gas inlet device.

The invention relates to a CVD reactor provided with such a gas inlet device.

Background

DE102008055582Al describes a gas inlet device made of quartz. The air intake described there has a central body arranged around the figure axis of the air intake. In the central region of the intake device, a plurality of intake channels extend, which are arranged concentrically to one another and open into a collecting opening extending over the entire circumference. Adjacent to the discharge opening of the gas supply channel, a gas distribution chamber annularly surrounding the central portion is connected, which is divided by a separating bottom into a plurality of gas distribution layers lying one above the other. The radially outer edge of each gas distribution chamber is surrounded by a gas distribution wall which has a plurality of gas passage openings which open into gas outlet openings through which process gases can be fed into the process chamber of the CVD reactor. A separate process gas can be fed into each of the plurality of gas distribution chambers. Different process gases can flow into the process chamber adjoining the gas inlet device at mutually different heights, separately from one another. In which a substrate is supported on a susceptor heated from below, which substrate can be coated with a group III-V layer or a group IV layer or a group II-VI layer using the MOCVD process.

A method for structuring quartz bodies is known from DE10029110B4, EP3036061B1, DE202017002851U1 and DE102018202687a 1. A quartz blank having a polished surface is first treated with a laser beam. During which the laser beam generates ultrashort pulses and is focused. The focal spot is moved in a writing motion, for example line by line, through the volume of the quartz blank. In the focal spot the laser beam reaches an intensity above a threshold intensity while the quartz material undergoes a material transition. The converted material may then be removed with a fluid etchant such as a potassium hydroxide solution. It is known from the prior art to use this method for producing a liquid channel for a nozzle body of a spray head or a spray can. It is also known to manufacture cavity structures in components of projection exposure systems. It is also known to use this process, known as SLE (selective laser induced etching), to make microchannels, shaped holes and cuts in transparent components made of quartz glass, borosilicate glass, sapphire and ruby. DE 10241964A 1, DE 10247921A 1, DE 102014104218A 1 and US 2009/0260569A1 are also part of the prior art.

Disclosure of Invention

The object of the present invention is to improve an intake device of the type mentioned at the outset in a manner that is advantageous in terms of use, wherein it is provided in particular that the intake device is designed such that it is easier to handle and is also designed such that it is technically easy to produce and assemble. Furthermore, a method is specified with which intake device designs that were previously impossible to manufacture can be realized.

This object is achieved by the invention specified in the claims, while the dependent claims represent not only advantageous developments of the invention specified in the dependent claims, but also independent solutions to this object.

First and mainly according to the first aspect of the invention, it is proposed that at least one of the preferably plurality of mutually superposed gas distribution layers has a flow barrier. The flow barrier may extend through the gas distribution chamber such that the flow barrier divides the gas distribution chamber into an upstream section and a downstream section, the upstream section interfacing with the mouth of the inlet passage. The downstream section may interface with another flow barrier. The downstream section may also interface with the gas distribution wall. The flow barrier surrounds, preferably annularly and particularly preferably annularly, the central section, which has the outlet opening of the inlet channel. The flow barrier may also directly interface with the gas distribution wall. The flow barrier has a gas passage channel, through which the gas passes into the gas passage holes of the gas distribution wall. The gas passage channel has a smaller cross-sectional area than the gas passage holes. The gas passage channel can be a gas passage opening through which the process gas can flow from the upstream section of the gas distribution chamber into the downstream section of the gas distribution chamber. The flow barrier forms a pressure barrier such that there is a higher gas pressure on the upstream side of the flow barrier than on the downstream side of the flow barrier. Thereby, the gas flow exiting from the flow barrier is homogenized on the exit face of the flow barrier. The gas passage openings are preferably arranged in substantially the same distribution on the gas outlet side of the flow barrier. The gas outlet face of the flow barrier is preferably the same as the gas outlet face of the gas distribution wall as the circumferential face, in particular the outer circumferential face, of the cylinder. The opening may have a diameter of less than 0.1mm, less than 0.2mm, less than 0.5mm, less than 1mm, less than 2mm or less than 3 mm. The gas passage channels of the flow barrier may also be slits.

According to a second aspect of the invention, the gas distribution layers lying one above the other are each formed by a disk-shaped gas distribution section, wherein the gas distribution section is preferably formed by a gas distribution body/section. The gas distribution section can be designed in the shape of a disc. The gas distribution wall can be connected to the separating bottom in a material-uniform or material-bonded manner, wherein the separating bottom has the shape of a circular disk. The central section rises from the separating bottom. The central section is in particular base-shaped and forms a discharge opening of the gas inlet channel into the gas distribution chamber. The central section can have an upwardly directed broad side which extends in particular in a plane, wherein the upper edge of the gas distribution wall can also extend in this plane of extension. These gas distributors/segments are in particular designed substantially identically. They have a preferably flat bottom side. The gas distributors/segments can be stacked on top of one another in such a way that the broad side of the central segment of the lower gas distributor/segment lies flat against the bottom side of the separating bottom of the upper gas distributor/segment. In particular, it is also provided that the upwardly directed top side of the gas distribution wall rests sealingly against the bottom side of the separating bottom, so that by stacking at least two gas distribution bodies/sections, the gas distribution chamber is closed downwardly and upwardly by the separating bottom, respectively. The gas distribution chamber is preferably open only in the radial direction, wherein the gas distribution chamber is open in the radially outward direction by means of the gas passage openings of the gas distribution wall and in the radially inward direction by the inlet openings of the inlet channels. Furthermore, it is provided that at least some of the gas distribution bodies/sections have passage openings in their central sections. The passage opening is open towards the upper broad side and towards the bottom side of the separating bottom, so that the passage opening can connect the inlet opening of the gas passage of the lower gas distributing body/section with the passage opening of the upper gas distributing body/section. A plurality of superposed gas passage openings thus form the inlet passage.

Another aspect of the invention relates to the arrangement of a central opening in the air intake device, which central opening may be a flushing channel or a fixing opening for a fixing screw.

Another aspect of the invention relates to the fastening of the air inlet device to the fastening section. The fixing section may be fixed on a cover portion of the reactor wall, wherein the cover portion may be separated from a lower portion of the reactor shell for maintenance of the reactor. During this time, the gas inlet means is removed from the process chamber. According to the invention, the air inlet device is fastened to the fastening section by means of a fastening means which passes through a fastening opening of the air inlet device. In particular, it is provided that the gas distribution layer is formed by a substantially disk-shaped gas distribution body/section. A fixing opening for receiving a fixing element, which may be a screw, extends through the gas distribution body/section. The fixation opening may be a central opening extending in a central section of the gas distributing body/section. These gas ligands/segments may be connected to one another in a material-bonded manner. But they may also be connected to one another in a material-uniform manner. The entire air inlet device can thus be composed of several parts. But it may also be made in one piece. The gas inlet device is preferably designed as a rotationally symmetrical body and has a central fastening opening, wherein a plurality of gas inlet channels opening into gas distribution layers that differ from one another can extend in the circumferential direction around the fastening opening. Alternatively or in combination with the central fastening opening, however, it is also possible to provide non-central, eccentric fastening openings, through which the intake device can be fastened to the fastening surface. The non-central fastening opening can in particular be arranged on a flange section which projects radially beyond the gas distribution wall. The flange portion can be used to fix the air inlet device to the support.

According to a further aspect of the invention, it is provided that the intake channels formed by the cylindrical central section of the intake device do not run concentrically with respect to one another, but are arranged in the circumferential direction separately from one another about an axis which may be the drawing axis. The inlet channels are arranged next to one another in a cross-sectional plane through the central section. The inlets of the different inlet channels are arranged offset from one another in the circumferential direction around the central section. The discharge opening is preferably directed radially outward. In this embodiment, it is provided in particular that the central section is surrounded by at least one flow barrier, so that a gas flow which is distributed uniformly in the circumferential direction can substantially flow out of the gas passage openings which extend over the circumference of the flow barrier, which gas flow can be passed into the downstream section of the gas distribution chamber, from where the process gas can flow into the process chamber through the passage openings of the gas distribution wall.

The gas inlet device according to the invention can be composed of quartz, as described above. But it may also consist of metal, in particular refined steel. If the air inlet is made of refined steel or another metal, it is preferably made of a plurality of parts, wherein the individual parts of the air inlet are connected to one another in a form-fitting manner, for example by means of a screw connection, or in a material-bonded manner, for example by means of a weld seam. The gas feed-through holes may be formed by drilling. In a preferred embodiment of the invention, however, the gas inlet is made of quartz. It is also possible here for the individual components of the gas inlet device, namely the gas distribution wall, the separating floor, the base-shaped central section and the flow barrier, to be produced separately from one another and then connected by means of a suitable material-bonding medium, namely, for example, borosilicate glass. In a further preferred embodiment, the gas inlet device is formed by a plurality of disk-shaped gas distribution bodies which are arranged one above the other and can be formed in one piece. They can be produced from disk-shaped quartz bodies, in particular using the SLE process (selective laser-induced etching) for this purpose. For this process, in a first process step, a local material transformation of the homogeneous quartz precursor takes place. For this purpose, an ultrashort pulse laser beam is focused on a focal spot in the micrometer range, while the focal spot is guided through the volume of the quartz body in a writing manner by the movement of the laser beam relative to the quartz workpiece. The material transition of the quartz material is carried out in the focal spot of the laser beam by a multiphoton process. The material thus converted can be removed in a second process step by means of an etching fluid. The etching fluid is preferably a liquid, such as KOH. By means of the method, a gas distribution wall, its gas passage openings, a central base, its gas supply lines and a flow barrier extending between the central section and the gas distribution wall and its passage openings can be produced in a disk-shaped quartz base body. The disk-shaped gas distribution bodies/segments of uniform material produced in this way can then be stacked and connected to one another in a material-bonded manner. In a particularly preferred variant of the invention, the gas distributing body materials are uniformly connected to one another. The SLE process described above is also used for producing such a one-piece gas inlet device made from a uniform quartz blank. In this manufacturing process, a solid quartz body is first manufactured, which has a polished surface. The cavity is then exposed by a focused laser beam. The exposed material is then removed with an etching fluid. If the intake device has the aforementioned flange section, the flange section can be connected to the gas distributor body in a material-uniform manner and can likewise be produced by the SLE process.

Drawings

Embodiments of the invention are further elucidated below with reference to the drawing. In the drawings:

FIG. 1 shows a schematic longitudinal cross section of a CVD reactor with a first exemplary embodiment of a gas inlet device 2 according to the invention,

fig. 2 shows in a perspective view five gas distributing bodies 4.1, 4.2, 4.3, 4.4 and 4.5,

figure 3 shows the air inlet means in one view,

figure 4 shows a second exemplary embodiment of an air inlet device in the representation according to figure 1,

figure 5 shows in enlarged form a part V in figure 4,

figure 6 shows a cross-section according to line VI-VI in figure 4,

figure 7 shows an air intake device of a second embodiment of the present invention,

figure 8 shows a view similar to figure 5 of another embodiment of the air inlet arrangement,

FIG. 9 shows a view similar to FIG. 5 of another embodiment of an air intake device.

Detailed Description

Fig. 1 shows a schematic, essentially structural representation of a CVD reactor, in the process chamber 20 of which a CVD deposition process can be carried out, in which, in particular, semiconductor layers can be deposited on a plurality of substrates 21. The substrate 21 may be composed of a III-V compound, silicon, sapphire, or other suitable material. One or more layers, which may be composed of elements of main group IV, III-V or II-VI, are deposited on the substrate. The various process gases are passed through the gas inlet 2 with the aid of a carrier gas, for example H₂Or a noble gas, is introduced into the process chamber 20, wherein the process gas may comprise a hydride of main group V, a hydride of main group IV, or an organometallic compound of main group IV or main group III. The susceptor 19 of the carrier substrate 21, which is made of coated graphite or the like, is brought from below to the process temperature by means of a heating device 24, so that the process gas fed into the center of the process chamber 20 by means of the gas feed device is pyrolytically decomposed on the surface of the substrate arranged circularly around this center to form a layer, in particular a single crystal. The process gas flowing radially through the process chamber 20 leaves the process chamber 20 through a gas outlet 22, which gas outlet 22 surrounds the susceptor 19 and is connected to a vacuum pump, not shown.

The base 19 can rest on a support plate 32, which support plate 32 is in turn carried by a support tube 33. The susceptor 19, which is only schematically shown in fig. 1, can be rotated about an axis by means not shown.

Reference numeral 34 denotes a diffusion barrier between the heating device 24 and the susceptor 19.

Inside the reactor housing 1, there is a process chamber ceiling 23, through which process chamber ceiling 23 the fastening section 3 projects into the process chamber 20. The gas inlet device 2 is fastened to a fastening section 3, which may consist of metal, in particular refined steel.

The gas inlet means 2 may consist of metal, in particular refined steel. The gas inlet means 2 is preferably made of quartz. The air inlet means 2 may consist of metal, in particular non-ferrous metals or refined steel. However, the gas inlet means 2 is preferably made of a ceramic material and particularly preferably of quartz.

In the intake device 2 shown in fig. 1, the lower section of the intake device 2 with the outlet opening is inserted into a recess 25 of the base 19. The upper part of the air inlet device 2 forming the flange portion 36 can be connected to the lower region in a material-uniform manner. The passage opening forming the flushing passage 17' extends through the centre of the air inlet means 2. Fastening openings are schematically indicated by reference numeral 35, through which the air inlet device 2 can be fastened to a support by means of screws which act through the fastening openings 35.

In the exemplary embodiment shown in fig. 4, a fastening section 3 is shown, which fastening section 3 has a lower section 3 ″ and an upper section 3' ". However, this section 3 ″ can also be a material-integral component of the air inlet device 2. In the fastening opening 35, a fastening screw is shown here which is screwed into a threaded hole of the upper section 3' ″.

The fastening portion 3 has a substantially flat fastening surface 3' which points downward, i.e. toward the base 19. In the central region of the fastening surface 3', in the present exemplary embodiment, there are five gas channels arranged around the center, which are connected to the inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 of the inlet device 2. The inlet channel 9.1, 9.2, 9.3, 9.4, 9.5 surrounds a fastening opening 27 in which a nut 28 is mounted in a rotationally fixed manner, which nut is supported on a spring 29. The shank of the fixing screw 30 is screwed into this nut 28, the head of the fixing screw 30 being supported on a base plate 31, in particular made of quartz. In a recess 25 projecting into the base 19Between the base plate 31 and the fastening surface 3' of the fastening section 3, there are five disk-shaped gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5, which are of essentially identical structural design but differ from one another in the design of the central section 15. The substrate 31 may also consist of ceramic materials, non-ferrous metals, in particular refined steel. The gas ligands 4.1 to 4.5 are stacked for different purposes from each other. Cl can be separated by two upper gas ligands 4.1, 4.2₂Into the process chamber 20 to clean the process chamber 20. Process gas can be fed into the process chamber 20 through the lower gas distribution bodies 4.3 to 4.5.

In the drawing, no sealing means are shown, by means of which the upper edge of the uppermost gas distributing body 4.1 can be sealed off from the fastening surface 3'. The section indicated by 3 "in fig. 4 may form a sealed fitting.

The gas distributing bodies/sections 4.1, 4.2, 4.3, 4.4 and 4.5 shown in fig. 2 each have a disk-shaped substrate which forms a separating base 11, by means of which separating base 11 the gas distributing bodies 4.1, 4.2, 4.3, 4.4 and 4.5 lying one above the other are separated from one another.

Extending from the circular edge of the separating bottom 11 is a circular gas distribution wall 6, which gas distribution wall 6 has a plurality of uniformly arranged gas passage openings 13. The gas passage openings 13 have a diameter of less than 3mm, in particular less than 1 mm. The gas passage openings 13 extending in the radial direction each open into the gas outlet opening 7. The height of the gas distributing body 4.1, 4.2, 4.3, 4.4, 4.5, measured in the direction of the axis of the gas inlet means 2 with reference to the figure axis, may be between 5mm and 2 cm. The width of the gas distribution wall 6, which extends in the radial direction with reference to the figure axis, can likewise be in the range between 0.5cm and 2 cm. The wall thickness of the gas distribution wall 6 can, however, also be less than 0.5cm, and in particular 1 mm.

The gas distribution wall 6 encloses a gas distribution chamber 8 extending around the central section 15. The gas distribution chamber 8 is in this embodiment divided into three annular sections 8', 8 "and 8"'. The first section 8' of the gas distribution chamber 8 extends from the gas distribution wall 6 to a flow barrier 12, which flow barrier 12 is arranged concentrically with the gas distribution wall 6. Radially inside the section 8 'of the gas distribution chamber 8, which section 8' is surrounded by the flow barrier 12, a second flow barrier 12', which also extends concentrically with the gas distribution wall 6, extends, which second flow barrier 12' surrounds the section 8 "'of the gas distribution chamber 8, which section 8"' borders or adjoins the central section 15. The flow barriers 12, 12' have the same height as the gas distribution wall 6 and in this embodiment also the same radial width. The distance between two adjacent flow barriers 12, 12' or the distance between the central section 15 and the flow barrier 12' or the distance between the flow barrier 12 and the gas distribution wall 6 is greater than the wall thickness of the flow barrier 12, 12' or the gas distribution wall 6. The radial width of the sections 8', 8", 8"' of the gas distribution chamber 8 is in particular greater than 1 cm. The wall thickness of the flow barriers 12, 12' may be different. The wall thickness may also be greater than the radial extension of the intermediate spaces 8', 8"' between the flow barriers 12, 12 '. The radial width of the sections 8', 8"' of the gas distribution chamber 8 may also be less than 5 mm.

In the embodiment shown in fig. 9, the flow barrier 12 "' even directly interfaces with the gas distribution wall 6.

In the embodiment shown in fig. 2, the annular flow barriers 12, 12 'have gas passage holes 14, 14' arranged in a uniform circumferential distribution. The diameter of the gas passage holes 14, 14' may be the same as the diameter of the gas passage holes 13. However, it can also be provided that the gas passage openings 14 'of the inner flow barrier 12' have a smaller diameter than the gas passage openings 14 of the outer flow barrier 12, and the gas passage openings 13 of the gas distribution wall 6 have a larger diameter than the gas passage openings 14 of the flow barrier 12. The flow barriers 12, 12' cause a pressure difference between the upstream and downstream sections of the gas distribution chamber 8.

In particular, it is provided that the gas passage openings 14, 14 'of the flow barriers 12, 12' are offset from one another and not aligned with one another. The same applies correspondingly to the gas passage openings 14 of the flow barrier 12 and the gas passage openings 13 of the gas distribution wall 6. The gas passage openings 14 extend offset and are not aligned with the gas passage openings 13.

The central section 15 is designed as a base and has the same axial height as the flow barrier 12, 12 'or the gas distribution wall 6, so that the top sides of the flow barrier 12, 12' and the gas distribution wall lie in the same plane, in which plane the broad sides of the base 15 also extend.

Each base has an inlet opening 10, via which inlet opening 10 the inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 assigned to the respective gas distribution body 4.1, 4.2, 4.3, 4.4 and 4.5 open into a radially inner section 8 ″ of the gas distribution chamber 8. The inlet opening 10 may extend from the top side of the separating bottom 11 to the bottom side of the separating bottom 11 of the gas distributing body above.

In the exemplary embodiment shown in fig. 4, the uppermost gas distribution body 4.1, which directly adjoins the fastening surface 8, has four passage openings 16 arranged in the circumferential direction around the fastening opening 17, which are assigned to the inlet channels 9.2, 9.3, 9.4, 9.5, respectively. The inlet channel 9.1 assigned to the uppermost gas distributor element/section 4.1 opens into the inlet opening 10, which is preceded by a baffle 18.

In the exemplary embodiment shown in fig. 1, the top side of the uppermost gas distribution body 4.1 can be connected to a flange section 36 in a material-uniform manner, in which flange section 36 a plurality of gas supply lines 5 extend.

The second gas distributor body 4.2 has, as seen from above, only three passage openings 16, which belong to the inlet passages 9.3, 9.4 and 9.5, respectively. The inlet channel 9.2 opens here into the inlet opening 10, before which there is also a baffle 18 and the inlet opening 10 is arranged offset in the circumferential direction with respect to the inlet opening 10 of the gas distributor block 4.1.

The gas distributor 4.3 arranged below the gas distributor 4.2 has only two passage openings 16, which are assigned to the inlet channels 9.4 and 9.5. The inlet channel 9.3 opens here into an inlet opening 10 which is arranged offset with respect to the inlet opening 10 for the inlet gas 4.2.

The gas distributor 4.4 arranged below the gas distributor 4.3 has only one passage opening 16, which is assigned to the inlet passage 9.5. The inlet channel 9.5 opens into an inlet opening 10 arranged offset in the circumferential direction with respect to the inlet opening 10 of the inlet channel 4.3.

The gas distributor body 4.5 arranged lowermost has no passage openings 16. In the central section 15 of the lowermost gas distributor body 4.5, the gas inlet channels 9.5 open into the outlet openings 10, which are arranged offset in the circumferential direction.

With reference to the drawing axis of the gas inlet device 2, the inlets 10 of all gas distribution bodies 4.1 to 4.5 open in different azimuthal directions.

Below the lowermost arranged gas distribution body/section 4.5 there is a base plate 31, which base plate 31 has a countersink for receiving the screw head of the fixing screw 30.

It is considered advantageous if the air inlet device 2 can be removed from the fastening section 3 only by loosening the fastening screws 30.

It is also considered advantageous that either the individual gas ligands 4.1, 4.2, 4.3, 4.4 and 4.5, respectively, can be "machined out of a solid" quartz blank. It is also considered advantageous that the entire gas inlet device 2 can be produced from a single blank together with the gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5, which are then connected to one another in a material-uniform manner. The gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5 are then gas distribution sections in which the materials of the gas inlet device 2 are uniformly connected to one another.

For the production of gas inlet device 2, the SLE process described above is preferably used, in which material changes are made to a certain extent in a written manner in the volume region of the quartz blank by means of a strongly focused and ultrashort pulsed laser beam. These volume regions are the gas passage openings 13, the gas passage openings 14 and 14', the sections 8', 8", 8" ' of the gas distribution chamber 8, the inlet channels 9.1, 9.2, 9.3, 9.4, 9.5, their inlets 10 and the fastening openings 17. After the material conversion, the converted material is dissolved out of the quartz body by means of an etching liquid. The embodiment of the gas inlet means 2 shown in fig. 1 can be manufactured entirely from one blank using the SLE process.

It is considered particularly advantageous that the manufacturing method can be used to minimize the number of parts to be assembled.

The embodiment shown in fig. 7 is a gas inlet device 2 with two superposed gas distribution chambers 8, wherein the gas distribution chamber 8 is divided into two sections by means of a flow barrier 12, namely an upstream section 8 ″ and a downstream section. However, it is also possible to arrange a plurality of gas distribution chambers in an overlapping manner, which can each be supplied by a gas duct. Gas channels 9.1, 9.2 open into each gas distribution chamber 8. The substantially cylindrical body of the gas inlet means 2 has gas passage holes 13, 14, 14' on its cylindrical outer circumference and thus forms the gas distribution wall 6. The two gas distribution chambers 8 are separated from each other by means of a separating bottom 11. The substrate 31 forms the bottom of the lower gas distribution chamber 8.

The gas inlet means 2 consists of an integral quartz piece. The cavity is manufactured by adopting an SLE process.

Fig. 8 shows another variant of the gas inlet device, in which the flow barrier 12 has a smaller height than the gas distribution wall 6. A gas through channel 14 "is formed between the bottom side of the separating bottom 11 and the top side of the annular flow barrier 12. Here, a circumferential gap is meant. In a variant not shown, however, the slot can also be divided in the azimuth direction by webs.

In the embodiment shown in fig. 9, the flow barrier 12 "directly adjoins the gas distribution wall 6. In this exemplary embodiment, the gas passage opening 14 with a small cross-sectional area opens into the gas passage opening 13 with a larger cross-sectional area, which gas passage opening 13 extends to the gas outlet opening 7.

The

flow barriers

12, 12', 12 "embodied in these embodiments form pressure barriers. The inlets 10 of the inlet channels 9.1 to 9.5 are arranged eccentrically with respect to the course of the gas distribution wall 6. The flow path between the inlet opening and the gas passage opening 13 is therefore different. In order to avoid an uneven gas flow entering the process chamber 20 from the gas outlet opening 7 due to the eccentric arrangement of the gas inlet 10, the gas through-

channels

14, 14', 14 "are dimensioned such that a higher pressure is formed inside the gas distribution chamber 8 than outside the gas distribution chamber 8 and that the overpressure is sufficiently large that the

flow barriers

12, 12', 12" homogenize the process gas flow entering the process chamber 20. In other words, the same amount of gas flows into the process chamber per unit area over the entire circumferential length of the gas outlet face formed by the cylindrical outer peripheral surface.

The above explanations, which have been provided to explain the invention covered by the present application in its entirety, further improve the prior art by at least the following combinations of features, while two, more or all of these combinations of features can also be combined, namely:

a gas inlet arrangement, characterized in that at least one first flow barrier 12, 12 'with one or more gas passage channels 14, 14' extends in at least one gas distribution chamber 8 between the inlet opening 10 of the gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5 and the gas distribution wall 6.

An air inlet arrangement, characterized in that a flow barrier 12, 12' surrounds a central section 15, which central section 15 has an inlet opening 10 of an air inlet channel 9.1, 9.2, 9.3, 9.4, 9.5.

An air inlet arrangement, characterized in that at least two flow barriers 12, 12 'are arranged one behind the other in the flow direction, wherein the at least two flow barriers 12, 12' and in particular the gas distribution wall 6 are arranged concentrically around a central section 15.

A gas inlet arrangement, characterized in that at least one flow barrier 12, 12' divides the gas distribution chamber 8 into an upstream section 8", 8'" and a downstream section 8', 8", or that the flow barrier 12" has a gas through channel 14, which gas through channel 14 directly borders a gas through hole 13 of the gas distribution wall 6 of larger cross-section leading into the gas outlet opening 7.

A gas inlet arrangement, characterized in that each gas distribution layer is designed as a disk-shaped gas distribution section 4.1, 4.2, 4.3, 4.4, 4.5, wherein the gas distribution wall 6 is connected with the edge of the separating bottom 11 at least by sealing against each other, the central section 15 rises from the separating bottom 11, the central section 15 has an inlet opening 10 of the inlet channels 9.1, 9.2, 9.3, 9.4, 9.5, wherein the upwardly directed broad side 15' of the central portion 15 of the lower gas distribution portion 4.2, 4.3, 4.4, 4.5 lies flat against or is connected to the underside of the separating bottom 11 of the upper gas distribution portion 4.1, 4.2, 4.3, 4.4, and the passage opening 16 of the central section 15 of the upper gas distribution section 4.1, 4.2, 4.3, 4.4 is in fluid communication with the inlet opening 10 of the inlet passage 9.1, 9.2, 9.3, 9.4, 9.5 of the lower gas distribution section 4.2, 4.3, 4.4, 4.5 and is open towards the upper broad side 15'.

A gas inlet arrangement, characterized in that the separating bottom 11 is materially uniformly connected to the central section 15 and/or the gas distribution wall 6.

An air inlet arrangement, characterized in that the central section 15 is formed by a socket (Sockel).

A gas inlet arrangement, characterized in that each gas distribution layer is formed by a disc-shaped gas distribution section 4.1, 4.2, 4.3, 4.4, 4.5 and is provided with openings 17, 17' extending through the entire gas inlet means 2.

An air inlet arrangement, characterized in that the opening 17 forms a fixing opening for fixing the air inlet means 2 on the fixing section 3 or that the opening 17 forms a flushing channel 17'.

A gas inlet arrangement is characterized in that disk-shaped gas distribution sections 4.1, 4.2, 4.3, 4.4, 4.5, which are arranged one above the other, are in particular gas distribution bodies which are connected to one another in a material-uniform or material-bonded manner.

An air inlet arrangement, characterized in that the inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 are arranged next to one another in a cross-sectional plane through the central section 15, the inlets 10 of the inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 which differ from one another being arranged offset from one another in the circumferential direction around the central section 15.

An air inlet arrangement, characterized in that the air inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 are arranged around a central fixed opening 17.

Gas inlet device, characterized in that the gas inlet means 2 consists of quartz, the material-integrated gas distribution body/section 4.1, 4.2, 4.3, 4.4, 4.5 or the material-integrated gas inlet means 2 is manufactured by a selective laser-induced etching process, during which a material transformation takes place at the focal spot of a focused laser beam and the transformed material is removed by means of an etching fluid.

A method, characterized in that a gas distribution body 4.1, 4.2, 4.3, 4.4, 4.5 or a gas inlet device 2 with a plurality of gas distribution sections 4.1, 4.2, 4.3, 4.4, 4.5, respectively, is produced in one piece by selective laser-induced etching.

A method is characterized in that the merging openings 10 are arranged inside the gas distribution chamber 8 such that the process gas flow flowing out of them reaches the individual gas through holes 13 via flow paths of different lengths and that at least one

flow barrier

12, 12', 12 "in the gas distribution chamber 8 homogenizes the process gas flowing out of the gas outlet openings 7.

All features disclosed are essential to the invention (individually, and also in combination with one another). The disclosure of this application also includes the entire contents of the disclosure of the related/attached priority documents (copies of the prior application) and also for the purpose of including the features of these documents in the claims of this application. The dependent claims characterize independent inventive extensions of the prior art with respect to their features even if the claims are not cited, in particular in order to carry out divisional applications on the basis of these claims. The solution specified in each claim may additionally have one or more of the features specified in the above description, in particular provided with reference signs and/or given in the list of reference signs. The invention also relates to a design form in which individual features mentioned in the above description are not implemented, in particular if they are deemed not necessary for the respective application purpose or can be replaced by other technically equivalent alternatives.

List of reference numerals

1CVD reactor

2 air intake device

3 fixing the section

3' fixing surface

4.1 gas-distributing ligand/segment

4.2 gas-distributing ligand/segment

4.3 gas-distributing ligand/segment

4.4 gas-distributing ligand/segment

4.5 gas-distributing ligand/segment

5 gas supply line

6 gas distribution wall

7 air outlet opening

8 gas distribution chamber

8' downstream section

8"' upstream section

9.1 air intake channel

9.2 air intake channel

9.3 air intake channel

9.4 air intake channel

9.5 air intake channel

10 sink inlet

11 dividing bottom

12 flow barrier

12' flow barrier

13 gas through hole

14 gas passing through channel

14' gas passing through channel

14' gas through passage

15 center section, base

15' wide side

16 channel port

17 fixed opening

17' flushing channel

18 baffle plate

19 base

20 process chamber

21 substrate

22 gas outlet

23 process chamber top plate

24 heating device

25 concave part

26 air outlet opening

27 fixed opening

28 nut

29 spring

30 set screw

31 base plate

32 support disc

33 support the pipe

34 diffusion barrier

35 fixed opening

36 flange section

Claims

1. A gas inlet apparatus for a CVD reactor (1) having a gas inlet device which can be fastened to a fastening section (3) having a gas supply line (5), the gas inlet device having a plurality of gas distribution layers lying one above the other, each of which has a gas distribution wall (6) with a gas outlet opening (7), the gas outlet openings (7) being in fluid communication with a gas distribution chamber (8) enclosed by the gas distribution walls (6), wherein gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) with a gas inlet opening (10) each open into the gas distribution chamber (8), the gas distribution chambers (8) of the different gas distribution layers each being separated from one another by a separating floor (11), wherein the gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) are arranged in a cylindrical central section (15) of the gas inlet device (2), the inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) are arranged next to one another in a cross-sectional plane through the central section (15), the inlets (10) of the inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) that are different from one another being arranged offset from one another in the circumferential direction around the central section (15).

2. An air inlet arrangement according to claim 1, characterized in that the air inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) is arranged around the central opening (17, 17') or the central axis.

3. Gas inlet arrangement according to one of the preceding claims, characterized in that the gas inlet means (2) consists of quartz, the gas distribution body/section (4.1, 4.2, 4.3, 4.4, 4.5) in one piece of material or the gas inlet means (2) in one piece of material being manufactured by a selective laser-induced etching process in which a material transformation takes place at the focal spot of a focused laser beam and the transformed material is removed by means of an etching fluid.

4. A gas inlet device for a CVD reactor (1), having a gas inlet device which can be fastened to a fastening section (3) having a gas supply line (5), the gas inlet device having a plurality of gas distribution layers lying one on top of the other, which each have a gas distribution wall (6) with a gas outlet opening (7), which gas outlet openings (7) are in fluid communication with a gas distribution chamber (8) enclosed by the gas distribution walls (6), wherein gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) with a gas inlet opening (10) open into the gas distribution chamber (8), the gas distribution chambers (8) of the different gas distribution layers being separated from one another by a separating bottom (11), characterized in that each gas distribution layer is designed as a disc-shaped gas distribution section (4.1, 4.2, 4.3, 4.4, 4.5), wherein the gas distribution walls (6) are connected to the edges of the separating bottom (11) at least by sealing abutment against one another, the central section (15) rises from the separating floor (11), the central section (15) having a collecting opening (10) for the gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5), wherein the upwardly directed broad side (15') of the central section (15) of the lower gas distribution section (4.2, 4.3, 4.4, 4.5) lies flat against or is connected to the underside of the separating floor (11) of the upper gas distribution section (4.1, 4.2, 4.3, 4.4), and the passage opening (16) of the central section (15) of the upper gas distribution section (4.1, 4.2, 4.3, 4.4) is in fluid communication with the broad side (10 ') of the gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) of the lower gas distribution section (4.1, 4.2, 4.3, 4.4, 4.5) and the collecting opening (10 ') is open towards the upper side.

5. The gas inlet arrangement as claimed in one of the preceding claims, characterized in that the separating bottom (11) is connected in material-united manner to the central section (15) and/or to the gas distribution wall (6).

6. An air inlet arrangement according to any of the preceding claims, characterized in that the central section (15) is formed by a base.

7. A gas inlet arrangement for a CVD reactor (1) with a gas inlet device which can be fastened to a fastening section (3) with a gas supply line (5) and has a plurality of gas distribution layers lying one above the other, each having a gas distribution wall (6) with gas outlet openings (7), which gas outlet openings (7) are in fluid communication with a gas distribution chamber (8) enclosed by the gas distribution wall (6), wherein gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) each open into the gas distribution chamber (8), the gas distribution chambers (8) of the different gas distribution layers each being separated from one another by a separating bottom (11), characterized in that each gas distribution layer is formed by a disk-shaped gas distribution section (4.1, 4.2, 4.3, 4.4, 4.5) and is provided with an opening (17) extending through the entire gas inlet device (2), 17').

8. The air inlet arrangement as claimed in claim 7, characterized in that the opening (17) forms a fastening opening for fastening the air inlet device (2) to the fastening section (3) or the opening (17) forms a flushing channel (17').

9. The gas inlet arrangement as claimed in one of the preceding claims, characterized in that the disk-shaped gas distribution sections (4.1, 4.2, 4.3, 4.4, 4.5) which are arranged one above the other are gas distribution bodies which are connected to one another, in particular in a material-uniform or material-bonded manner.

10. A gas inlet device for a CVD reactor (1), having a gas inlet device which can be fastened to a fastening section (3) having a gas supply line (5), the gas inlet device having a plurality of gas distribution layers lying one above the other, each gas distribution layer having a gas distribution wall (6) with a gas outlet opening (7), the gas outlet openings (7) being in fluid communication with a gas distribution chamber (8) enclosed by the gas distribution walls (6), wherein gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) with a gas inlet opening (10) each open into the gas distribution chamber (8), the gas distribution chambers (8) of the different gas distribution layers being separated from one another by a separating bottom (11), characterized in that at least one gas passage or a plurality of gas passages (14) extends in at least one gas distribution chamber (8) between the gas inlet opening (10) of the gas inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) and the gas distribution wall (6), 14', 14") of the first flow barrier (12, 12', 12").

11. The intake apparatus according to one of the preceding claims, wherein the flow barrier (12, 12') surrounds a central section (15), the central section (15) having a discharge opening (10) of the intake channel (9.1, 9.2, 9.3, 9.4, 9.5).

12. The intake apparatus according to one of the preceding claims, wherein at least two flow barriers (12, 12') are arranged one behind the other in the flow direction, wherein the at least two flow barriers (12, 12') and in particular the gas distribution wall (6) are arranged concentrically around the central section (15).

13. The gas inlet arrangement as claimed in one of the preceding claims, characterized in that the at least one flow barrier (12, 12') divides the gas distribution chamber (8) into an upstream section (8", 8'") and a downstream section (8', 8"), or in that the flow barrier (12") has a gas passage channel (14), which gas passage channel (14) directly borders a gas passage opening (13) of the gas distribution wall (6) which opens into the gas outlet opening (7) with a larger cross section.

14. Method for producing a gas inlet device (2) of a gas inlet apparatus according to one of the preceding claims, characterized in that a gas distributor body (4.1, 4.2, 4.3, 4.4, 4.5) or a gas inlet device (2) having a plurality of gas distribution sections (4.1, 4.2, 4.3, 4.4, 4.5) is produced in each case in one piece by selective laser-induced etching.

15. A method for feeding process gases into a process chamber (20) of a CVD reactor (1), which are fed into a corresponding gas distribution chamber (8) of a gas inlet device (2) via a gas feed line (5) or, separately from one another, via a plurality of gas feed lines (5), gas inlet channels (9.1 to 9.5) connected in each case and a corresponding gas collecting opening (10), the process gases being fed from the gas distribution chamber (8) through gas passage openings (13) of a gas distribution wall (6) leading into a gas outlet opening (7) into the process chamber (20), characterized in that the gas collecting opening (10) is arranged inside the gas distribution chamber (8) in such a way that the process gas flows flowing out of it via flow paths of different lengths to the individual gas passage openings (13) and at least one flow barrier (12) in the gas distribution chamber (8), 12', 12") causes homogenization of the process gas flowing out of the gas outlet opening (7).

16. An air inlet arrangement or method, characterized by one or more of the characterizing features of one of the preceding claims.