JP7461351B2 - Gas inlet device for CVD reactor - Google Patents

Description

The present invention relates to a gas inlet device for a CVD reactor, comprising a gas inlet member fixable to a fixing part having a gas supply conduit and having a plurality of gas distribution levels arranged above one another, each of which has a gas distribution wall with a gas outlet opening, which is in fluid communication with a gas distribution chamber surrounded by the gas distribution wall, in which the gas inlet channel opens into the gas distribution chamber and in which the gas distribution chambers of the gas distribution levels are separated by a separating base, in which the gas inlet channel is arranged, in particular, in a columnar central part of the gas inlet member.

The invention further relates to a CVD reactor equipped with such a gas inlet device.

A gas inlet member made of quartz is described in US Pat. The gas inlet member described therein has a central body disposed about the illustrated axis of the gas inlet member. A plurality of concentrically arranged gas inlet channels extend in the central region of the gas inlet member, which open into openings extending over the entire circumference. Connected to the opening of the gas inlet channel is a ring-shaped, centrally surrounding gas distribution chamber, which is separated by a separating base into a plurality of gas distribution levels arranged one above the other. The radially outer edge of each gas distribution chamber is surrounded by a gas distribution wall having a plurality of gas passage holes opening into the gas outlet opening and Process gases can be supplied to the process chamber of the CVD reactor through. Each of the plurality of gas distribution chambers can be supplied with an individual process gas. Different process gases can flow into process chambers separated from each other at different heights and connected to the gas inlet member. In the process chamber, a substrate is placed on a susceptor that is heated from below, on which a III-V layer or a group IV layer or a group II-VI layer can be deposited by MOCVD.

From US Pat. Nos. 5,999,103, 5,104,105 and 5, a method for constructing a quartz body is known. A quartz blank with a polished surface is first treated with a laser beam. The laser beam is then generated in ultrashort pulses and focused. The focus passes through the volume of the quartz blank, for example line by line, in a writing-like motion. At the focus, the laser beam reaches an intensity exceeding a threshold intensity, whereby a material modification of the quartz material occurs. The modified material can then be removed with a liquid etchant, for example a potassium hydroxide solution. From the prior art, it is known to produce liquid channels for nozzle bodies of spray heads or spray cans by these methods. It is further known to produce cavity structures in components for projection exposure systems. It is further known to produce microchannels, shaped holes, notches, etc. in transparent components such as quartz glass, borosilicate glass, sapphire and ruby using a method called SLE (selective laser-induced etching). The prior art further includes US Pat. Nos. 5,133,523, 5,136,104 and 5,137,105.

German Patent Application No. 10 2008 055 582 German Patent No. 100 29 110 European Patent No. 3 036 061 German Utility Model Application Publication No. 20 2017 002 851 DE 10 2018 202 687 A1 DE 10241964 A1 DE 10241964 A1 DE 102014104218 A1 US Patent Application Publication No. 2009/0260569

The invention is based on the object of constructing a gas inlet member of the type described above in a way that is advantageous for use. In that case, in particular it is provided to configure the gas inlet member. The object of the invention is to design the gas inlet member in such a way that it is easier to handle and also easier to technically finish and assemble. Furthermore, a method is provided for realizing a shape of the gas inlet member that has not been possible heretofore.

This problem is solved by the invention indicated in the claims, the dependent claims not only indicating advantageous further developments of the invention indicated in each dependent claim, but also indicating independent solutions to the problem.

Firstly and essentially, according to a first aspect of the invention, it is provided that at least one of the preferably multiple one above the other gas distribution levels has a flow barrier. The flow barriers extend through the gas distribution chamber such that they separate the gas distribution chamber into an upstream part adjacent to the opening of the gas inlet channel and a downstream part. The downstream part can be adjacent to a further flow barrier. However, the downstream part can also be adjacent to the gas distribution wall. The flow barrier preferably surrounds the central part with the opening of the gas inlet channel in the shape of a ring, and particularly preferably in the shape of a circular ring. However, the flow barrier can also be directly adjacent to the gas distribution wall. The flow barrier has gas passage channels that open into the gas passage holes of the gas distribution wall. The gas passage channels have a smaller cross section than the gas passage holes. The gas passage channels can be gas passage holes, through which the process gas can flow from the upstream part of the gas distribution chamber to the downstream part of the gas distribution chamber.
The flow barrier forms a pressure barrier, which results in a higher gas pressure upstream of the flow barrier than downstream of the flow barrier. This results in a uniform gas flux coming out of the flow barrier across the gas outlet surface of the flow barrier. The gas passage holes are preferably arranged on the gas outlet surface of the flow barrier with a substantially uniform distribution. The gas outlet surface of the flow barrier is preferably a circumferential surface and in particular a cylindrical outer surface, like the gas outlet surface of the gas distribution wall. The holes can have a diameter of less than 0.1 mm, less than 0.2 mm, less than 0.5 mm, less than 1 mm, less than 2 mm or less than 3 mm. However, the gas passage channels of the flow barrier can also be gaps.

According to a second aspect of the invention, each of the gas distribution levels arranged one above the other is formed by a disc-shaped gas distribution part. In that case, the gas distribution part is preferably formed by a gas distribution body/part. The gas distribution part can be formed in the shape of a circular disc. The gas distribution wall is connected materially or materially uniformly to the separating base, the separating base having the shape of a circular disc. The central portion can stand up from the separation base. Its central part is particularly pedestal-shaped and forms the opening of the gas inlet channel which opens into the gas distribution chamber. The central part can in particular have an upwardly directed main surface extending in one plane, in which plane the upper edge of the gas distribution wall can also extend.
The gas distribution bodies/sections are in particular of substantially the same shape. They preferably have a flat underside. The gas distribution bodies/sections are stacked one above the other in such a way that the main surface of the central part of the lower gas distribution body/section lies flush with the lower surface of the separation base of the upper gas distribution body/section. . In this case, in particular, the upwardly facing upper side of the gas distribution wall is connected in a sealing manner to the lower side of the separation base, so that at least two gas distributors/parts are located one above the other, so that the gas distribution chamber can be arranged both downwardly and upwardly. are also closed on a separate basis. The gas distribution chamber is preferably only radially open, in which case the gas distribution chamber opens radially outwards via the gas passage holes in the gas distribution wall and by the opening of the gas inlet channel. Open radially inward.
It is further provided that at least one of the gas distribution bodies/sections has one through hole in its central part. The through hole is open both to the upper main surface of the separation base and to the lower main surface, so that the through hole is an opening of the gas channel of the lower gas distribution body/part. can be connected to the through-hole of the upper gas distribution body/part. The plurality of gas through holes arranged one above the other thus form a gas inlet channel.

A further aspect of the invention relates to the configuration of the central hole in the gas inlet member, which can be a purge channel or a fixing hole for a fixing screw.

A further aspect of the invention relates to the fastening of the gas inlet member to a fixing part, which can be fastened to a ceiling part of the reactor wall, in which case the ceiling part can be removed from the lower part of the reactor housing for maintenance of the reactor, in which case the gas inlet member is lifted out of the process chamber. According to the invention, the gas inlet member is fastened to the fixing part by fastening means which are inserted into fastening holes in the gas inlet member.
It is particularly provided that the gas distribution level is formed by a substantially disk-shaped gas distribution body/part. Through the gas distribution body/part, a fastening hole extends for receiving a fastening element, which may be a screw. The fastening hole may be a central hole extending into the center of the gas distribution body/part. The gas distribution bodies/parts may be materially uniformly connected to one another. However, they may also be materially integrally connected to one another. The entire gas inlet element may therefore be made of several parts. However, it may also be made in one piece. The gas inlet element is preferably formed as a rotationally symmetrical body and has a central fastening hole. In that case, several gas inlet channels may extend around the fastening hole in the circumferential direction, which open into different gas distribution levels.
However, instead of or in combination with the central fixing hole, off-centre fixing holes can be provided, by means of which the gas inlet member can be fixed to a fixing surface. The off-centre fixing holes can in particular be arranged in a flange portion which projects radially beyond the gas distribution wall, by means of which the gas inlet member can be fixed to a support.

According to a further aspect of the invention, the gas inlet channels formed from the columnar central part of the gas inlet member do not extend concentrically with respect to each other, but in a circumferential direction about an axis that can respectively be the axis in the drawing. provided that they are arranged separately from each other. According to the invention, the gas inlet channels are located next to each other in a cross section through the central part. The openings of the different gas inlet channels are arranged circumferentially offset from each other about the central portion. The openings preferably point radially outward.
In this embodiment, in particular, the central portion is surrounded by at least one flow barrier so that the gas flow exits in a substantially uniform circumferential distribution from gas passage holes extending on the circumferential surface of the flow barrier. What can be provided. The gas passage holes open into the downstream part of the gas distribution chamber, from where the process gas can flow into the process chamber through the passage holes in the gas distribution wall.

The gas inlet element formed according to the invention as described above can be made of quartz. However, it can also be made of metal, in particular stainless steel. If the gas inlet element is made of stainless steel, it is preferably made in several parts. In that case, the individual parts of the gas inlet element are firmly connected, for example by a screw connection, or materially connected, for example by a welded seam. The gas passage holes can be formed by drilling. However, in a preferred embodiment of the invention, the gas inlet element is made of quartz. Here too, it is possible to make the individual components of the gas inlet element, i.e. the gas distribution wall, the separating base, the pedestal-like central part and the flow barrier, separately from one another and then join them with a suitable material closing means, for example borosilicate glass.
In a likewise preferred embodiment, the gas inlet element has a number of disk-shaped gas distributors arranged one above the other, which can be formed in one piece. They can be milled out of a disk-shaped quartz body, in particular using the SLE method (selective laser-induced etching). In this method, in a first process step, a local material modification of a homogeneous quartz blank body is performed. For this, an ultrashort-pulsed laser beam is focused to a focal point in the micrometer range, the focal point being guided through the volume of the quartz body by moving the laser beam relative to the quartz workpiece. A material modification of the quartz material at the focal point of the laser beam is performed by a multi-photon process. The material modified in this way can be removed in a second process step by an etching liquid. The etching liquid is preferably a liquid, for example KOH. In this way, a flow barrier can be produced in the disk-shaped quartz base body, including a gas distribution wall, its gas passage holes, a central base, its gas supply conduits, and its passage holes extending between the central part and the gas distribution wall. The thus produced, materially one-piece, disk-shaped gas distributor bodies/parts can then be stacked one on top of the other and in particular bonded to one another in a materially uniform manner.
In a particularly preferred variant of the invention, the gas distributors are connected to each other in a materially integral manner. For the production of the gas inlet member made from such a homogeneous, one-piece quartz blank, the SLE method, which is also described above, is used. In this production method, a solid quartz body with a polished surface is first produced. Then, a cavity is exposed using a focused laser beam. The exposed material is then removed using an etching solution. If the gas inlet member has a flange portion as described above, the flange portion can be materially connected to the gas distributor and can also be produced using the SLE method.
These and other embodiments of the invention are described in greater detail with respect to the following drawings.

FIG. 1 shows, essentially diagrammatically in longitudinal section, the structure of a CVD reactor equipped with a first embodiment of a gas inlet member 2 according to the invention. FIG. 2 shows a perspective view of five gas distribution bodies 4.1, 4.2, 4.3, 4.4, 4.5 arranged one above the other and forming the gas inlet member 2. FIG. FIG. 3 is a diagram of the gas inlet member. FIG. 4 shows a second exemplary embodiment of the gas inlet member similar to FIG. FIG. 5 is an enlarged view of the V cross section in FIG. 4. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. FIG. 7 is a gas inlet member according to a second exemplary embodiment of the present invention. FIG. 8 is a view similar to FIG. 5 of a further exemplary embodiment of a gas inlet member. FIG. 9 is a view similar to FIG. 5 of a further exemplary embodiment of a gas inlet member.

FIG. 1 shows substantially schematically the configuration of a CVD reactor in which a process chamber 20 can carry out CVD deposition processes. In this case, in particular semiconductor layers can be deposited on a plurality of substrates 21 . Substrate 21 is made of III-V compounds, silicon, sapphire, or other suitable materials. One or more layers composed of elements of group IV semiconductors, group III-V semiconductors, or group II-VI semiconductors can be deposited on the substrate. Through the gas inlet member 2, various process gases are introduced into the process chamber 20 using a carrier gas, for example H ₂ or a noble gas. In that case, the process gas may contain a hydride of a group V semiconductor, a group IV semiconductor or an organometallic compound of a group IV semiconductor, or a group III semiconductor. A susceptor 19 made of coated graphite or the like carrying a substrate 21 is heated from below to a process temperature by a heating device 24, so that a process gas is supplied to the center of the process chamber 20 using a gas inlet member. In particular, a single crystal layer is formed by pyrolysis on the surface of a substrate arranged circularly around the centre. Process gas flowing radially through the process chamber 20 exits the process chamber 20 through a gas outlet 22 surrounding the susceptor 19 . The gas outlet 22 is connected to a suction pump (not shown).

The susceptor 19 rests on a support disk 32 which is supported by a support tube 33. By means of means not shown, the susceptor 19, which is shown only schematically in FIG. 1, can be rotated about an axis.

Reference numeral 34 indicates a diffusion barrier between the heating device 24 and the susceptor 19.

Inside the reactor housing 1 there is a process chamber ceiling 23 through which the fixing part 3 projects into the process chamber 20 . A gas inlet member 2 is fastened to a fastening part 3 which can be made of metal, in particular stainless steel.

The gas inlet member 2 may be made of metal, in particular stainless steel. However, preferably, the gas inlet member 2 is made of quartz. The gas inlet member 2 may be made of metal, in particular a non-ferrous metal or stainless steel. However, preferably, the gas inlet member 2 is made of a ceramic material, in particular quartz.

In the gas inlet member 2 shown in FIG. 1, the lower part of the gas inlet member 2 having the gas outlet opening is fitted into the recess 25 of the susceptor 19. The upper part of the gas inlet member 2 forming the flange portion 36 can be materially connected integrally with the lower region. Extending through the center of the gas inlet member 2 is a through hole forming a purge channel 17'. Reference numeral 35 schematically indicates a fixing hole, with which the gas inlet member 2 can be fixed on the support member by means of a screw passing through the fixing hole 35.

In the exemplary embodiment shown in FIG. 4, a fixing part 3 is shown having a lower part 3" and an upper part 3'". Here, however, the lower part 3" can also be a materially integral part of the gas inlet member 2. Here, in the fixing hole 35, a fixing screw is shown which is screwed into a threaded hole in the upper part 3'".

The fixing part 3 has a substantially flat downward fixing surface 3' facing the susceptor 19. The central region of the fixing surface 3' has in the exemplary embodiment five centrally arranged gas channels, which are the gas inlet channels 9.1, 9.2, 9. 3, 9.4, and 9.5, respectively. The gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 surround a fixed hole 27 in which a nut 28 is rotatably mounted, the nut 28 It is supported on a spring 29. The screw thread of a fixing screw 30 is screwed into the nut 28, the head of which is supported on a base plate 31, in particular made of quartz. Five disc-shaped gas distributors 4.1, 4.2, 4.3, 4. 4 and 4.5, which have substantially the same shape but differ from each other with respect to the shape of the central portion 15. The base plate 31 can also be made of a ceramic material, of a non-ferrous metal, and in particular of stainless steel. The gas distribution bodies 4.1 to 4.5 arranged one above the other serve different purposes. The two upper gas distribution bodies 4.1, 4.2 make it possible to supply the process chamber 20 with Cl ₂ for cleaning the process chamber 20. Process gases can be supplied to the process chamber 20 by means of the lower gas distribution bodies 4.3 to 4.5.

A seal (not shown) seals the upper edge of the gas distribution body 4.1 arranged in the uppermost position against the fixing surface 3'. The portion marked 3'' in Figure 4 forms the seal adapter.

The gas distributors/parts 4.1, 4.2, 4.3, 4.4 and 4.5 shown in FIG. 2 each have a disk-shaped base plate that forms a separation base 11, by which the gas distributors 4.1, 4.2, 4.3, 4.4 and 4.5 arranged above and below are separated from each other.

A circular ring-shaped gas distribution wall 6 extends on the circular edge of the separation base 11 and has a plurality of evenly distributed gas passage holes 13 . These gas passage holes 13 have a diameter of less than 3 mm, in particular less than 1 mm. The radially extending gas passage holes 13 each open into one gas outlet opening 7 . The height of the gas distributors 4.1, 4.2, 4.3, 4.4, 4.5 measured in the axial direction of the gas inlet member 2 (with respect to the axis in the figure) is between 5 mm and 2 cm. It can be done as it is. The width of the radially extending gas distribution wall 6 (with respect to the axis in the figure) can likewise lie in the range from 0.5 cm to 2 cm. However, the wall thickness of the gas distribution wall 6 can also be less than 0.5 cm, in particular 1 mm.

The gas distribution wall 6 surrounds the gas distribution chamber 8, which extends around the central portion 15. The gas distribution chamber 8 is separated in the exemplary embodiment into three ring-shaped portions 8', 8", 8'". The first portion 8' of the gas distribution chamber 8 extends from the gas distribution wall 6 to the flow barrier 12, which is arranged concentrically with the gas distribution wall 6. Radially inward of the portion 8' of the gas distribution chamber 8 surrounded by the flow barrier 12 extends a second flow barrier 12', which also extends concentrically with the gas distribution wall 6, which surrounds the portion 8'" of the gas distribution chamber 8, which portion 8'" is adjacent to the central portion 15. The flow barriers 12, 12' have the same height as the gas distribution wall 6 and, in the exemplary embodiment, the same radial width. The distance between two adjacent flow barriers 12, 12' or between the central portion 15 and the flow barrier 12' or between the flow barrier 12 and the gas distribution wall 6 is greater than the wall thickness of the flow barrier 12, 12' or the gas distribution wall 6. The radial width of the portions 8', 8", 8'" of the gas distribution chamber 8 is in particular greater than 1 cm. The wall thickness of the flow barriers 12, 12' can be different. The wall thickness can be greater than the radial length of the space 8', 8", 8'" between the flow barriers 12, 12'. The radial width of the portions 8', 8", 8'" of the gas distribution chamber 8 can also be less than 5 mm.

In the exemplary embodiment shown in FIG. 9, the ring-shaped flow barrier 12, 12' is even directly adjacent to the gas distribution wall 6.

In the exemplary embodiment shown in FIG. 2, the ring-shaped flow barrier 12, 12' has gas passage holes 14, 14' arranged uniformly distributed in the circumferential direction. The diameter of the gas passage holes 14, 14' can be the same as that of the gas passage holes 13. However, it is also provided that the gas passage holes 14' of the inner flow barrier 12' have a smaller diameter than the gas passage holes 14 of the outer flow barrier 12 and that the gas passage holes 13 of the gas distribution wall 6 have a larger diameter than the gas passage holes 14 of the flow barrier 12. The flow barriers 12, 12' create a pressure difference between the upstream and downstream parts of the gas distribution chamber 8.

It is in particular provided that the gas passage holes 14, 14' of the flow barriers 12, 12' are offset from one another and are not aligned with one another. The same applies to the gas passage holes 14 of the flow barrier 12 and the gas passage holes 13 of the gas distribution wall 6. The gas passage holes 14 extend offset from and are not aligned with the gas passage holes 13.

The central portion 15 is formed as a pedestal and has the same axial height as the flow barrier 12, 12' or the gas distribution wall 6, so that the upper surfaces of the flow barrier 12, 12' and the gas distribution wall 6 lie in the same plane, within which the main surface of the pedestal 15 also extends.

Each pedestal has an opening 10 through which the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 assigned to each gas distributor 4.1, 4.2, 4.3, 4.4, 4.5 open into a radially inner portion of the gas distribution chamber 8. The openings 10 can extend from the upper surface of the separation base 11 to the lower surface of the separation base 11 of the gas distributor above it.

In the exemplary embodiment shown in FIG. 4, the gas distributor 4.1, which is located at the top position and directly connected to the fixed surface 3', has four through holes 16 arranged circumferentially around the fixed hole 17, which are assigned to the gas inlet channels 9.2, 9.3, 9.4, 9.5, respectively. The gas inlet channel 9.1 assigned to the top gas distributor/part 4.1 opens into an opening 10 in front of which a straightening wall 18 is located.

In the exemplary embodiment shown in FIG. 1, the upper surface of the gas distribution body 4.1 arranged in the uppermost position is materially integral with a flange portion 36 into which a plurality of gas supply conduits 5 extend. It is connected.

Viewed from above, the second gas distributor 4.2 has only three through holes 16, each of which belongs to a gas inlet channel 9.3, 9.4 and 9.5. The gas inlet channel 9.2 here also opens into an opening 10 in front of which a straightening wall 18 is located, the opening 10 being circumferentially offset with respect to the opening 10 of the gas distributor 4.1.

The gas distributor 4.3 arranged below the gas distributor 4.2 still has only two through holes 16, which are assigned to the gas inlet channels 9.4 and 9.5. The gas inlet channel 9.3 opens here into an opening 10, which opening 10 is arranged offset with respect to the opening 10 of the gas distributor 4.2.

The gas distributor 4.4, which is arranged below the gas distributor 4.3, has only one through hole 16, which is assigned to the gas inlet channel 9.5. The gas inlet channel 9.4 here opens into an opening 10, which is arranged circumferentially offset with respect to the opening 10 of the gas distributor 4.3.

The gas distributor 4.5 located in the lowest position does not have through holes 16. In the central part 15 of the gas distributor 4.5 located in the lowest position, the gas inlet channel 9.5 opens into an opening 10 that is again arranged offset in the circumferential direction.

The openings 10 of all gas distributors 4.1 to 4.5 open in different orientations with respect to the illustrated axis of the gas inlet member 2.

At the underside of the gas distributor/part 4.5, which is located in the lowest position, is a base plate 31 having a recess for receiving the screw head of the fixing screw 30.

It may be advantageous if the gas inlet member 2 is removable from the fixing part 3 by simply loosening the fixing screw 30.

It is considered further advantageous that each of the individual gas distributors 4.1, 4.2, 4.3, 4.4 and 4.5 can be machined "from solid" from a quartz blank. The entire gas inlet member 2 with the gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5 materially connected to one another in one piece is then machined from a single blank. It is also considered advantageous to be able to do so. The gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5 are thus gas distribution parts of the gas inlet member 2 which are integrally connected to one another in material terms.

For the manufacture of the gas inlet member 2, the above-mentioned SLE is preferably used. In that case, a highly focused and ultrashort-pulsed laser beam is used to material-modify volumetric regions of a quartz blank as if written. These volumetric regions are the gas passage holes 13, the gas passage holes 14 and 14', the parts 8', 8", 8'" of the gas distribution chamber 8, the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5, their openings 10, and the fixing holes 17. After the material has been modified, the modified material is removed from the quartz body using an etching solution. The exemplary embodiment of the gas inlet member 2 shown in FIG. 1 can be manufactured entirely from a blank using the SLE process.

This manufacturing method is also considered particularly advantageous in that it minimizes the number of parts that are combined.

7 shows an exemplary embodiment of a gas inlet member 2 with two gas distribution chambers 8 arranged one above the other, which are separated by a flow barrier 12 into two parts, i.e. one upstream part 8" and one downstream part 8'. However, it is also possible to arrange several gas distribution chambers one above the other, which can each be supplied by a gas channel. A gas inlet channel 9.1, 9.2 opens into each gas distribution chamber 8. The substantially cylindrical gas inlet member 2 has gas passage holes 13, 14, 14' on its cylindrical surface, thereby forming a gas distribution wall 6. The two gas distribution chambers 8 are separated from each other by a separating base 11. A base plate 31 forms the base of the lower gas distribution chamber 8.

The gas inlet member 2 is made of a single piece of quartz. The cavity is fabricated using an SLE process.

Figure 8 shows a further variant of the gas inlet member, according to which the flow barrier 12 has a lower height than the gas distribution wall 6. Between the lower surface of the separation base 11 and the upper surface of the ring-shaped flow barrier 12, a gas passage channel 14" is formed. This is a circumferential gap. In a variant not shown, however, this gap may also be divided azimuthally by webs.

In the exemplary embodiment shown in FIG. 9, the flow barrier 12″ is directly adjacent to the gas distribution wall 6. In this exemplary embodiment, the gas passage hole 14 with a small cross section opens into the gas passage hole 13 with a larger cross section that extends to the gas outlet opening 7.

The flow barriers 12, 12', 12'' illustrated in the exemplary embodiment form a pressure barrier. The openings 10 of the gas inlet channels 9.1 to 9.5 are The flow distance between the aperture and the gas passage hole 13 is eccentrically arranged.The flow distance between the aperture and the gas passage hole 13 therefore varies.The eccentric arrangement of the aperture 10 results in non-uniform gas flow entering the process chamber 20 from the gas outlet aperture 7. In order to prevent The gas passage holes 14, 14', 14'' are dimensioned to equalize the process gas flow into the chamber 20. In other words, the same amount of gas per unit area is formed by the outer cylindrical surface. The gas enters the process chamber through the entire exit surface.

The foregoing is intended to generally describe the invention that is the subject of this application, and which independently advances the prior art by at least the following combinations of features: It is also possible to combine two or more of them or all of them.

A gas inlet device characterized in that at least one first flow barrier 12, 12' having one or more gas passage holes 14, 14' extends into at least one gas distribution chamber 8 between the gas inlet channel 9.1, 9.2, 9.3, 9.4, 9.5 and the gas distribution wall 6.

A gas inlet device characterized in that the flow barriers 12, 12' surround a central portion 15 having openings 10 for the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5.

At least two flow barriers 12, 12' are arranged one after the other in the flow direction, in which case the at least two flow barriers 12, 12' and in particular the gas distribution wall 6 are arranged concentrically about the central part 15. A gas inlet device characterized in that:

At least one flow barrier 12, 12' separates the gas distribution chamber 8 into an upstream part 8", 8'" and a downstream part 8', 8", or a flow barrier 12" connects the gas outlet opening 7. Gas inlet device characterized in that it has a gas passage channel 14'' directly adjacent to the gas passage hole 13 of the gas distribution wall 6, which has a larger open cross section.

Each gas distribution level is formed as a disk-shaped gas distribution section 4.1, 4.2, 4.3, 4.4, 4.5, in which the gas distribution wall 6 is connected at least in sealing contact with the edge of the separation base 11 and a central section 15 having openings 10 for the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 stands up from the separation base 11, in which the upwardly facing main surface 15' of the central section 15 of the gas distribution sections 4.2, 4.3, 4.4, 4.5 , is flush with or connected to the underside of the separation base 11 of the upper gas distribution section 4.1, 4.2, 4.3, 4.4, and the through hole 16 in the central part 15 of the upper gas distribution section 4.1, 4.2, 4.3, 4.4 is in fluid communication with the opening 10 of the gas inlet channel 9.2, 9.3, 9.4, 9.5 of the lower gas distribution section 4.2, 4.3, 4.4, 4.5 and opens to the upper main surface 15'.

A gas inlet device characterized in that the separation base 11 is materially integrally connected to the central portion 15 and/or the gas distribution wall 6.

A gas inlet device characterized in that the central part 15 is formed by a pedestal.

Each gas distribution level is formed by a disc-shaped gas distribution part 4.1, 4.2, 4.3, 4.4, 4.5 and a hole extending through the entire gas inlet member 2. A gas inlet device characterized in that 17, 17' are provided.

A gas inlet device characterized in that the hole 17 forms a fixing hole for fixing the gas inlet member 2 to the fixing part 3, or the hole 17 forms a purge channel 17'.

Disk-shaped gas distribution parts 4.1, 4.2, 4.3, 4.4, 4.5 arranged one above the other are in particular connected to one another in a materially integral or materially uniform manner. A gas inlet device characterized in that it is a distributor.

gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 located next to each other in a cross section through the central part 15 and different from each other; Gas inlet device characterized in that the openings 10 of 9.2, 9.3, 9.4, 9.5 are arranged offset from each other in the circumferential direction about the central part 15.

A gas inlet device characterized in that the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5 are arranged around a central fixing hole 17.

A gas inlet device characterized in that the gas inlet member is made of quartz and that the materially integral gas distributor/part 4.1, 4.2, 4.3, 4.4, 4.5 or the materially integral gas inlet member is produced by selective laser-induced etching, in which modification of the material takes place at the focus of a focused laser beam and the modified material is removed by an etching solution.

A method characterized in that the gas inlet member 2 having the gas distributor 4.1, 4.2, 4.3, 4.4, 4.5 or a plurality of gas distributor sections 4.1, 4.2, 4.3, 4.4, 4.5, respectively, is integrally produced by selective laser-induced etching.

At least one flow barrier 12 , 12 ′, 12 in the gas distribution chamber 8 is arranged such that the process gas flow emerging from the opening 10 covers different lengths of flow distance to the individual gas passage holes 13 . ” is characterized in that the openings 10 are arranged in the gas distribution chamber 8 so as to homogenize the process gas exiting the gas outlet openings 7.

All features disclosed are essential to the invention (not only on their own, but also in combination with each other). The disclosure content of related/attached priority documents (copies of earlier applications) is also fully included in the disclosure of this application for the purpose of including the features of these documents in the claims of this application. The dependent claims feature an independent and inventive further development of the prior art even without the features of the cited claims, in particular for filing a divisional application on the basis of these claims. The invention specified in each claim may additionally have one or more features specified in the foregoing description, particularly those provided with reference signs and/or identified in the description of the signs.
The invention also provides, in particular, that some of the features mentioned in the foregoing description, insofar as they are obviously optional in the respective intended use or can be replaced by other technically equivalent means. Regarding the design form in which is not implemented.

1 CVD reactor 2 Gas inlet member 3 Fixed part 3' Fixed surface 4.1, 4.2, 4.3, 4.4, 4.5 Gas distribution body/part 5 Gas supply conduit 6 Gas distribution wall 7 Gas outlet opening 8 Gas distribution chamber 8', 8" Downstream section 8'" Upstream section 9.1, 9.2, 9.3, 9.4, 9.5 Gas inlet channel 10 Opening 11 Separation base 12, 12' Flow barrier 13 Gas passage holes 14, 14' Gas passage holes 14" Gas passage channels 15 Central part, pedestal 15' Main surface 16 Through holes 17 Fixed holes 17' Purge channel 18 Rectification wall 19 Susceptor 20 Process chamber 21 Substrate 22 Gas outlet 23 Process chamber Ceiling 24 Heating device 25 Recess 26 Gas outlet opening 27 Fixing hole 28 Nut 29 Spring 30 Fixing screw 31 Base plate 32 Support disk 33 Support tube 34 Diffusion barrier 35 Fixing hole 36 Flange part

Claims (13)

Gas inlet of a CVD reactor (1) having a gas inlet member (2) fixable to a fixing part (3) with a gas supply conduit (5) and comprising a plurality of gas distribution levels arranged one above the other The apparatus, wherein each of said gas distribution levels has a gas distribution wall (6) comprising a gas outlet opening (7), said gas outlet opening (7) being surrounded by said gas distribution wall (6). The gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) with openings (10) are in fluid communication with the gas distribution chamber (8), in which case the gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) are The gas distribution chambers (8) each opening into the gas distribution chamber (8) and of different gas distribution levels are each separated from one another by a separation base (11), in which case the gas inlet channel (9 .1, 9.2, 9.3, 9.4, 9.5) is arranged in the columnar central part (15) of the gas inlet member (2),
The gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) are adjacent to each other in a cross section through the central part (15) and have different gas inlets. The openings (10) of the channels (9.1, 9.2, 9.3, 9.4, 9.5) are arranged offset from each other in a circumferential direction about the central part (15). A gas inlet device characterized by: characterized in that said gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) are arranged around a central hole (17, 17') or central axis. A gas inlet device according to claim 1. said gas inlet member (2) is made of quartz; The gas inlet member (2) integral with the is manufactured by a selective laser-induced etching method, in which modification of the material takes place at the focus of the focused laser light and the modified material is removed by an etching solution. A gas inlet device according to claim 1, characterized in that: A gas inlet device for a CVD reactor (1) comprising a gas inlet member (2) fixable to a fixing part (3) with a gas supply conduit (5) and comprising a plurality of gas distribution levels arranged one above the other, each of said gas distribution levels having a gas distribution wall (6) with a gas outlet opening (7) in fluid communication with a gas distribution chamber (8) surrounded by said gas distribution wall (6), wherein gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) with openings (10) open into said gas distribution chamber (8) and wherein said gas distribution chambers (8) of different gas distribution levels are separated from each other by respective separating bases (11),
Each gas distribution level is formed as a disk-shaped gas distribution part (4.1, 4.2, 4.3, 4.4, 4.5), in which the gas distribution walls (6) are materially and integrally connected to each other with the edges of the separation base (11) by at least one sealing mechanism, and a central part (15) having the openings (10) of the gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) is materially and integrally connected to the separation base (11) and is formed as a pedestal and stands up from the separation base (11),
In this case, the upwardly facing main surface (15') of the central part (15) of the lower gas distribution part (4.2, 4.3, 4.4, 4.5) is arranged flush with or connected to the lower surface of the separation base (11) of the upper gas distribution part (4.1, 4.2, 4.3, 4.4), and
1. A gas inlet device comprising: a through hole (16) in a central part (15) of the upper gas distribution part (4.1, 4.2, 4.3, 4.4) in fluid communication with the opening (10) of the gas inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) of the lower gas distribution part (4.2, 4.3, 4.4, 4.5) and opening on an upper main surface (15'). Gas inlet device according to claim 4, wherein the separation base (11) is connected in a materially integral manner to the central part (15) and/or to the gas distribution wall (6). Gas inlet device according to claim 1, characterized in that the central part (15) is formed by a pedestal. A gas inlet device for a CVD reactor (1) comprising a gas inlet member (2) fixable to a fixing part (3) with a gas supply conduit (5) and comprising a plurality of gas distribution levels arranged one above the other, each of said gas distribution levels having a gas distribution wall (6) with a gas outlet opening (7) in fluid communication with a gas distribution chamber (8) surrounded by said gas distribution wall (6), wherein gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) respectively open into said gas distribution chamber (8) and wherein said gas distribution chambers (8) of different gas distribution levels are respectively separated from one another by a separating base (11),
1. A gas inlet device comprising: a gas inlet level, the gas inlet level being formed as a disk-shaped gas distribution part (4.1, 4.2, 4.3, 4.4, 4.5) and provided with holes (17, 17') extending over the entire gas inlet member (2), the holes (17) forming fixing holes for fixing the gas inlet member (2) to a fixing part (3) or the holes (17) forming purge channels (17') . The gas inlet device according to claim 3, characterized in that the disk-shaped gas distribution sections (4.1, 4.2, 4.3, 4.4, 4.5) arranged one above the other are gas distribution bodies that are materially integral or materially uniformly connected to each other. Gas inlet of a CVD reactor (1) having a gas inlet member (2) fixable to a fixing part (3) with a gas supply conduit (5) and comprising a plurality of gas distribution levels arranged one above the other The apparatus, wherein each of said gas distribution levels has a gas distribution wall (6) comprising a gas outlet opening (7), said gas outlet opening (7) being surrounded by said gas distribution wall (6). gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) with openings (10) in fluid communication with a gas distribution chamber (8) provided with an opening (10); In the gas inlet device, each opening into the gas distribution chambers (8) and in which the gas distribution chambers (8) of different gas distribution levels are separated from each other by a separation base (11),
at least one gas distribution chamber (8) between the opening (10) of said gas inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) and said gas distribution wall (6); ) extends at least one first flow barrier (12, 12', 12'') with one or more gas passage channels (14, 14', 14'');
Said flow barrier (12, 12') is located between a gas distribution wall (6) and a central part (15), said central part (15) being connected to said gas inlet channel (9.1, 9.2). , 9.3, 9.4, 9.5) and surrounded by said flow barrier (12, 12'), in which case:
Gas inlet device, characterized in that said flow barrier (12, 12') has the same height as said gas distribution wall (6). 10. Gas inlet device according to claim 9 , characterized in that the flow barrier (12, 12') surrounds a central part (15) comprising the openings (10) of the gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5). At least two flow barriers (12, 12') are arranged one behind the other in the flow direction, in which case said at least two flow barriers (12, 12') and/or said gas distribution wall (6) Gas inlet device according to claim 9 , characterized in that the inlets are arranged concentrically around the central part (15). At least one flow barrier (12, 12') separates the gas distribution chamber (8) into an upstream part (8", 8'") and a downstream part (8', 8"), or a plurality of said a gas distribution wall (6) in which the flow barrier (12'') has a gas passage channel (14''), said gas passage channel (14'') having a larger cross section opening into a gas outlet opening (7); Gas inlet device according to claim 9 , characterized in that it is directly adjacent to the gas passage hole (13) of the gas inlet device. A method for manufacturing a gas inlet member (2) of a gas inlet device according to claim 1, 4, 7 or 9 , comprising:
Gas distributor (4.1, 4.2, 4.3, 4.4, 4.5) or multiple gas distributors (4.1, 4.2, 4.3, 4.4, 4.5) ) are each produced integrally by selective laser-induced etching.

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