CN106894001B - The even device of air of combined type - Google Patents
The even device of air of combined type Download PDFInfo
- Publication number
- CN106894001B CN106894001B CN201510952009.7A CN201510952009A CN106894001B CN 106894001 B CN106894001 B CN 106894001B CN 201510952009 A CN201510952009 A CN 201510952009A CN 106894001 B CN106894001 B CN 106894001B
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- air inlet
- air
- disk group
- compression ring
- gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Abstract
The present invention relates to the technical fields of thin film preparation process, disclose a kind of even device of air of combined type, in its cavity for being installed on chemical gas-phase deposition system or atomic layer deposition system, the cavity has inner cavity, and it is connected to the air inlet and air outlet of its inner cavity, the even device of air of the combined type includes even compression ring, even gas disk group and air inlet pipe, even gas disk group is set in inner cavity and is located in air inlet and air outlet, even compression ring is set to the outer rim of air inlet, and one end of air inlet pipe passes through cavity and is connected to even compression ring.The even device of air of combined type proposed by the present invention, in air inlet, even compression ring is set, and even gas disk group is set in the air inlet and air outlet of cavity, the gas flow of different location is controlled by adjusting even gas disk group upper vent hole size, not only increase the uniformity of air inlet, the non-uniform problem of outlet caused by also solving because of gas outlet position, size and pumping speed difference, while the uniformity of outlet is also improved, to be effectively guaranteed the uniformity of thicknesses of layers.
Description
Technical field
The present invention relates to the technical field of thin film preparation process more particularly to a kind of even device of air of combined type.
Background technique
Thin film preparation process is the important component in semiconductor fabrication process, be generally divided into physical film deposition, chemistry at
Film and physics and chemically composited masking technique.Wherein, (the Atomic layer of the atomic layer deposition in chemical film forming method
Deposition, abbreviation ALD) technology and chemical vapor deposition (Chemical vapor deposition, abbreviation CVD) skill
Art requires to be passed through corresponding reaction gas into reaction system.
For the CVD system of large cavity and ALD system, the uniformity of thicknesses of layers is a very important finger
Mark, and the uniformity of thicknesses of layers is frequently subjected to the influence of the factors such as intake method, air inlet hole site, exhaust hole site.But
Film thickness uniformity in the CVD system and ALD system of existing large cavity is poor, therefore, how to propose that one kind can be effective
Control intake method, air inlet hole site, the even device of air for being vented hole site and controlling film thickness uniformity, are urgently to solve in the industry
Certainly the technical issues of.
Summary of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, a kind of even device of air of combined type is provided, is improved
The uniformity of air inlet and outlet, ensure that the equal of thicknesses of layers in the cavity of chemical gas-phase deposition system or atomic layer deposition system
Even property.
The embodiment of the invention provides a kind of even device of air of combined type, are installed on chemical gas-phase deposition system or atomic layer deposition
In the cavity of product system, the cavity has inner cavity, and is connected to the air inlet and air outlet of the inner cavity, and the combined type is even
Device of air includes even compression ring, even gas disk group and air inlet pipe, the even gas disk group be set in the inner cavity and be located at it is described into
On port and the gas outlet, the even compression ring is set to the outer rim of the air inlet, and one end of the air inlet pipe passes through described
Cavity is simultaneously connected to the even compression ring.
Further, the even gas disk group includes the first even gas disk group and the second even gas disk group, the first even gas disk group
It is set on the air inlet, the second even gas disk group is set on the gas outlet.
Further, the described first even gas disk group includes disk, and is set to multiple same on the disk one side
Heart annulus offers multiple first through hole on the disk, offers on the concentric loop logical corresponding to the multiple first
Multiple second through-holes in hole, and the first through hole and second through-hole be stacked be staggered to form can outlet venthole.
Preferably, multiple second through-holes on each concentric loop are spaced apart along its even circumferential, and the disk
It is in be evenly spaced on that upper each first through hole, which corresponds to each second through-hole on the concentric loop,.
Further, the described first even gas disk group further includes multiple connectors, the disk and the multiple concentric loop
It is connected by the multiple connector.
Preferably, the connector is soket head cap screw or magnet.
Further, the structure of the described second even gas disk group is identical as the structure of the described first even gas disk group.
Further, the even compression ring connects multiple air inlet pipe, and is all provided between each air inlet pipe and the even compression ring
It is equipped with control valve.
Preferably, the control valve is VCR ball valve.
Further, the junction of the even compression ring and the air inlet pipe is sealed by high temperature gummed tape.
Based on the above-mentioned technical proposal, even compression ring is arranged in air inlet in the even device of air of combined type proposed by the present invention, and in chamber
Even gas disk group is arranged in the air inlet and air outlet of body, and the gas of different location is controlled by adjusting even gas disk group upper vent hole size
Body flow not only increases the uniformity of air inlet, going out caused by also solving because of gas outlet position, size and pumping speed difference
The non-uniform problem of gas, while the uniformity of outlet is also improved, to be effectively guaranteed the uniformity of thicknesses of layers.
Detailed description of the invention
Fig. 1 is the stereoscopic schematic diagram that the even device of air of combined type that the embodiment of the present invention proposes is assemblied in cavity；
Fig. 2 is the perspective view of the explosion that the even device of air of combined type that the embodiment of the present invention proposes is assemblied in cavity；
Fig. 3 is the schematic perspective view of the cavity in the embodiment of the present invention；
Fig. 4 is the perspective view of the explosion of the first even gas disk group in the embodiment of the present invention；
Fig. 5 is even compression ring and the structural schematic diagram after air inlet pipe and control valve assembly in the embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It should be noted that it can be directly another when element is referred to as " being fixed on " or " being set to " another element
On one element or it may be simultaneously present centering elements.When an element is known as " being connected to " another element, it can be with
It is directly to another element or may be simultaneously present centering elements.
It is only phase each other in addition, it should also be noted that, positional terms such as left and right, upper and lower in the embodiment of the present invention
It is reference to concept or with the normal operating condition of product, and should not be regarded as restrictive.Below in conjunction with tool
Realization of the invention is described in detail in body embodiment.
As shown in Figures 1 to 5, the embodiment of the present invention proposes a kind of even device of air 2 of combined type, is installed on chemical gaseous phase
(cavity 1 is inner chamber body in itself, or referred to as reaction cavity in the cavity 1 of depositing system or atomic layer deposition system.Outer chamber
It does not draw, is put into cavity 1 is whole in outer chamber, be air inlet pipeline and heating device between inner chamber body and outer chamber,
Can also the space between inner chamber body and outer chamber be filled with inert gas and protected), herein, which has inner cavity 10, with
And it is connected to air inlet 11 and the gas outlet 12 of the inner cavity 10, air inlet 11 and gas outlet 12 are separately positioned on the both ends of cavity 1, into
Port 11 and gas outlet 12 are circular port, and the internal diameter of air inlet 11 is greater than the internal diameter of gas outlet 12.Specifically, the combined type
Even device of air 2 includes even compression ring 21, even gas disk group 22 and air inlet pipe 23, wherein the inner cavity of cavity 1 is arranged in even gas disk group 22
In 10 and it is located on air inlet 11 and gas outlet 12, meanwhile, the outer rim of air inlet 11 is arranged in even compression ring 21, herein, even compression ring
21 are located at the outside of the even gas disk group 22 on air inlet 11, in addition, one end of air inlet pipe 23 connects after passing through cavity 1 with even compression ring 21
It connects and is connected to, the other end of the air inlet pipe 23 is located at the outside of cavity 1 and connects with external feeder (being not drawn into attached drawing)
It connects.Gas is passed into even compression ring 21 by air inlet pipe 23 by feeder gas supply, and gas is from multiple stomatas on even compression ring 21
210 outputs, the even gas disk group 22 on air inlet 11 enter the inner cavity 10 of cavity 1, the even gas being subsequently passed through on gas outlet 12
Disk group 22, and then exported from gas outlet 12, herein, even gas disk group 22 can control difference by changing the size of its upper vent hole
The gas flow of position, to realize the uniformity for adjusting air inlet and outlet.
The even device of air of combined type that the embodiment of the present invention proposes, has a characteristic that
The even device of air of combined type that the embodiment of the present invention proposes, is arranged even on the air inlet 11 of cavity 1 and gas outlet 12
Gas disk group 22, and even compression ring 21 is set in air inlet 11, the gas flow of different location is controlled by adjusting even gas disk group 22,
To realize the uniformity for adjusting air inlet and outlet, in this way, not only increasing the uniformity of air inlet, also solve because of gas outlet position
It sets, the non-uniform problem of outlet caused by size and pumping speed difference, the uniformity of outlet is improved, to effectively guarantee
The uniformity of thicknesses of layers.
Further, in an embodiment of the present invention, above-mentioned even gas disk group 22 includes that the first even gas disk group 221 and second is even
Gas disk group 222, here, the first even gas disk group 221 and the second even gas disk group 222 are respectively positioned in the inner cavity 10 of above-mentioned cavity 1, and the
One even gas disk group 221 is arranged on air inlet 11, and the second even gas disk group 222 is arranged on gas outlet 12.In this way, air-flow by into
When port 11, the uniformity of air inlet is improved under the adjustment effect of the first even gas disk group 221, in addition, air-flow is by inner cavity 10
When by gas outlet 12, the uniformity of outlet is improved under the adjustment effect of the second even gas disk group 222.As described above, passing through
On air inlet 11 and the first even gas disk group 221 and the second even gas disk group 222 is respectively set on gas outlet 12, realize air inlet and
Effective adjusting of outlet, ensure that the uniformity of air inlet and outlet.Certainly, according to the actual situation and demand, in its of the invention
In his embodiment, above-mentioned even gas disk group 22 can be also other compositions.
Further, in an embodiment of the present invention, the above-mentioned first even gas disk group 221 include disk 2211 and it is multiple with one heart
Annulus 2212, the multiple circle of concentric loop 2212 circles are nested to form discotic, and herein, multiple concentric loops 2212 are arranged in disk
On 2211 side surface.Here, multiple first through hole a are offered on disk 2211, offer correspondence on concentric loop 2212
Multiple second through-hole b of multiple first through hole a.When multiple concentric loops 2212 are arranged disc-shaped and post in 2211 side of disk
When on surface, the second through-hole b on first through hole a and concentric loop 2212 on disk 2211, which is stacked, is staggered to form the logical of outlet
Stomata, the venthole are the lap of first through hole a and the second through-hole b, herein, by adjusting concentric loop 2212 and disk
2211 relative position, i.e., adjustable vent size, and then realize that the uniformity of disengaging gas is adjusted.
Further, in an embodiment of the present invention, multiple second through-hole b on above-mentioned each concentric loop 2212 are along it
Even circumferential is spaced apart, i.e., multiple second through-hole b uniform intervals form circumferential, when multiple concentric loops 2212 are arranged in disk
When shape, multiple second through-hole b thereon form circular array；Also, each first through hole a on above-mentioned disk 2211 with it is concentric
Each second through-hole b on annulus 2212 is corresponded, that is to say, that between multiple first through hole a on the disk 2211 are uniform
Every being distributed rounded array, it is covered with entire disk 2211 from inside to outside.Certainly, according to the actual situation and demand, of the invention
In other embodiments, on the multiple second through-hole b and above-mentioned disk 2211 on above-mentioned each concentric loop 2212 multiple
One through-hole a can be also other distribution forms, such as rectangular array, triangular array etc..
Further, in an embodiment of the present invention, the above-mentioned first even gas disk group 221 further includes multiple connectors 2213,
Above-mentioned disk 2211 and above-mentioned multiple concentric loops 2212 are formed by the connection of multiple connectors 2213 to be detachably fixed.Work as disk
When needing to adjust relative position between 2211 and concentric loop 2212, connector 2213 only need to be unclamped, i.e., adjustable disk 2211
Relative position between concentric loop 2212.Herein, pass through multiple 2213 clutch disks 2211 of connector and multiple concentric circles
Ring 2212 avoids placement or causes the relative motion of upper lower burrs when adjusting even gas disk, ensure that the first even gas disk group 221 is whole
Stability.
Further, in an embodiment of the present invention, above-mentioned connector 2213 is preferably soket head cap screw.In addition, for
The lesser even gas disk of venthole, can change soket head cap screw into magnet and concentric loop is fixed.Certainly, according to practical feelings
Condition and demand, in other embodiments of the invention, above-mentioned connector 2213 can also be other connecting elements, not make herein unique
It limits.
Further, in an embodiment of the present invention, the structure of the above-mentioned second even gas disk group 222 and the above-mentioned first even gas disk
The structure of group 221 is identical.Herein, the structure of the second even gas disk group 222 is no longer applied and is stated, and specific structure can refer to above-mentioned about the
The narration of one even 221 structure of gas disk group.When the even device of air of the combined type is installed, the second even gas disk group 222 and the first even gas disk group
221 are oppositely arranged.Certainly, in other embodiments of the invention, according to plated film original part, gas outlet size, gas outlet position and
The speed of evacuation of vacuum pump is different, and the second even gas disk group 222 can also be different with the structure of the first even gas disk group 221.
In an embodiment of the present invention, connect multiple air inlet pipe 23 on above-mentioned even compression ring 21, and each air inlet pipe 23 with it is even
Control valve 24 is provided between compression ring 21, herein, control valve 24 is preferably VCR ball valve, certainly, the control valve 24
It can be other types special valve.Here, even compression ring 21 is separately connected by multiple control valves 24 and multiple air inlet pipe 23, root
The control valve 24 not used can be closed according to technique difference, in this way, avoiding the intersection between different presomas in air inlet pipeline
Pollution.
Further, in an embodiment of the present invention, above-mentioned 21 convenient disassembly of even compression ring, and can be replaced according to concrete technology
The even compression ring of different size.Even compression ring 21 uses movable connection type with air inlet pipe 23, and disassembly is very convenient, and even compression ring
21 with the junction of air inlet pipe 23 using high temperature gummed tape sealing.
Based on the above-mentioned technical proposal, the present invention be directed to film thickness uniformities in the CVD system of large cavity and ALD system
There is convenient disassembly, disengaging tolerance to be continuously adjusted, use for the problem of difference, the even device of air of combined type for designing and processing, the device
The advantages that method is simple, the thicknesses of layers control suitable for the ALD and CVD system of large cavity, can largely reduce
The manufacturing cost of jig.Especially it is worth noting that the specific structure of even gas disk group 22, here, the even gas disk group 22 is by structure phase
The even gas disk group 221 of same first and the second even gas disk group 222 form, and the first even gas disk group 221 (the second even gas disk group 222) uses
The double-deck even gas disk design, is mainly made of two parts, i.e. the even gas disk of the even gas disk in upper layer and lower layer, wherein the even gas disk of lower layer is
Disk 2211 is provided with multiple first through hole a thereon, and multiple first through hole a are arranged with circular array, and are covered with from inside to outside whole
A disk 2211；The even gas disk in upper layer is made of several concentric loops 2212, the aperture size and quantity above each annulus with
The disk 2211 of lower layer is identical.At work, disk 2211 is completely coincident with the through-hole on concentric loop 2212, according in experiment
The uniformity of different location thicknesses of layers in cavity 1, while the first even gas disk group 221 and the second even gas disk group 222 are adjusted, rotation
The annulus of 2211 upper layer corresponding position of disk, changes the size of venthole, controls the gas flow of different location, and then certain
The uniformity of range internal control thicknesses of layers.On the even gas disk of the even gas disk in upper layer and lower layer the shape of aperture can be it is fan-shaped, round,
Rectangular and triangle, or the combination of the above shape.
Due to the embodiment of the present invention propose the even device of air of combined type be entire depositing system a part, whole system by
Heating part between outer chamber, inner chamber body (also known as reaction chamber, i.e., above-mentioned cavity 1) and interior outer chamber is constituted.In use, will be interior
Cavity is placed in outer chamber, and air inlet pipe 23 and control valve 24 are attached, and is then put in the second even gas disk group 222 interior
Film coating jig and coated element are put on the second even gas disk group 222 by the bottom of cavity, then put the first even gas disk group 221,
Before testing, gas vent and following gas vent above two even gas disk groups are completely coincident, and place into even compression ring 21,
(when disassembly, do not have to dismantle even compression ring 21, the first even gas disk group 221 is taken out out of even 21 ring of compression ring) and make even compression ring 21
On four bayonets be aligned with air inlet pipe 23 and sealed with high temperature gummed tape.In addition, according to after test on different location coated element
The difference of thicknesses of layers, to the air inlet and venthole on different location in the first even gas disk group 221 and the second even gas disk group 222
The size of (venthole) is adjusted, to reach the consistent purpose of thicknesses of layers on different location.To the concentric circles on even gas disk
After ring is adjusted, it is fixed using soket head cap screw, when gas disk even with adjustment-free, causes the relative motion of upper lower burrs, for
The lesser even gas disk of venthole, can change soket head cap screw into magnet and annulus is fixed.In addition, on even compression ring 21
Stomata 210, can also be improved according to experimental result, thus it is possible to vary the size and location of stomata 210, in the present embodiment
The stomata 210 of even compression ring 21 is a row, can also be changed to two row or multi-row.
Embodiment described above, the only specific embodiment of the invention, but scope of protection of the present invention is not limited thereto,
Anyone skilled in the art in the technical scope disclosed by the present invention, can readily occur in various equivalent repair
Change, replace and improve etc., these modifications, replacement and improvement should be covered by the protection scope of the present invention.Therefore, this hair
Bright protection scope should be subject to the protection scope in claims.
Claims (6)
1. the even device of air of combined type, is installed in the cavity of chemical gas-phase deposition system or atomic layer deposition system, the cavity
With inner cavity, and the air inlet and air outlet of the connection inner cavity, which is characterized in that the even device of air of combined type includes even
Compression ring, even gas disk group and air inlet pipe, the even gas disk group be set in the inner cavity and be located at the air inlet and it is described go out
On port, the even compression ring is set to the outer rim of the air inlet, one end of the air inlet pipe pass through the cavity and with it is described
Even compression ring connection；
The even gas disk group includes the first even gas disk group and the second even gas disk group, and the first even gas disk group is set to the air inlet
On mouth, the second even gas disk group is set on the gas outlet；
The first even gas disk group includes disk, and the multiple concentric loops being set on the disk one side, the circle
Multiple first through hole are offered on disk, are offered on the concentric loop logical corresponding to multiple the second of the multiple first through hole
Hole, and the first through hole and second through-hole be stacked be staggered to form can outlet venthole；
The first even gas disk group further includes multiple connectors, and the disk and the multiple concentric loop pass through the multiple company
Fitting formation is detachably connected.
2. the even device of air of combined type as described in claim 1, which is characterized in that multiple second on each concentric loop are logical
Hole is spaced apart along its even circumferential, and each first through hole is logical corresponding on the concentric loop each described second on the disk
Hole is in be evenly spaced on.
3. such as the even device of air of the described in any item combined types of claim 1 to 2, which is characterized in that the second even gas disk group
Structure is identical as the structure of the described first even gas disk group.
4. such as the even device of air of the described in any item combined types of claim 1 to 2, which is characterized in that the even compression ring connection is multiple
Air inlet pipe, and control valve is provided between each air inlet pipe and the even compression ring.
5. the even device of air of combined type as claimed in claim 4, which is characterized in that the control valve is VCR ball valve.
6. the even device of air of combined type as claimed in claim 4, which is characterized in that the connection of the even compression ring and the air inlet pipe
Place is sealed by high temperature gummed tape.
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| CN201510952009.7A CN106894001B (en) | 2015-12-17 | 2015-12-17 | The even device of air of combined type |
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| CN201510952009.7A CN106894001B (en) | 2015-12-17 | 2015-12-17 | The even device of air of combined type |
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| CN106894001B true CN106894001B (en) | 2019-04-12 |
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| CN108149223B (en) * | 2017-12-27 | 2020-08-07 | 长沙新材料产业研究院有限公司 | MPCVD cavity structure and MPCVD equipment |
| CN109363390A (en) * | 2018-11-28 | 2019-02-22 | 浙江天隆厨房设备工程有限公司 | A kind of storage space adjustable intelligent warm stage |
| DE102018130139A1 (en) * | 2018-11-28 | 2020-05-28 | Aixtron Se | Gas inlet device for a CVD reactor |
| CN110306171B (en) * | 2019-06-28 | 2023-09-08 | 郑州磨料磨具磨削研究所有限公司 | Deposition chamber with improved gas distribution and MPCVD device |
| CN110923644B (en) * | 2020-02-12 | 2020-06-19 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for reactive sputtering |
| CN112371452B (en) * | 2020-11-04 | 2022-03-18 | 上海华力集成电路制造有限公司 | Air regulating device for semiconductor manufacturing process environment |
| CN114134486B (en) * | 2021-12-09 | 2023-06-09 | 拓荆科技股份有限公司 | Uniform gas structure of reaction cavity |
| CN114790574B (en) * | 2022-05-16 | 2023-07-28 | 浙江大学 | Flow-adjustable vertical silicon epitaxial reaction chamber air inlet device |
| CN117059529B (en) * | 2023-10-11 | 2023-12-19 | 江苏邑文微电子科技有限公司 | Gas homogenizing device and semiconductor etching equipment |
| CN117418218A (en) * | 2023-12-19 | 2024-01-19 | 北京北方华创微电子装备有限公司 | Air inlet assembly, air inlet device and semiconductor process chamber |
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| TW587139B (en) * | 2002-10-18 | 2004-05-11 | Winbond Electronics Corp | Gas distribution system and method for the plasma gas in the chamber |
| CN101355010A (en) * | 2007-07-26 | 2009-01-28 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake installation and reaction chamber |
| JP2010186949A (en) * | 2009-02-13 | 2010-08-26 | Nuflare Technology Inc | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
| CN103184433A (en) * | 2012-05-24 | 2013-07-03 | 北京普纳森电子科技有限公司 | Gas diffusion homogenization device and plasma process equipment using same |
| CN103774120A (en) * | 2013-12-31 | 2014-05-07 | 刘键 | Gas uniformizing device for PECVD (Plasma Enhanced Chemical Vapor Deposition) system |
| CN205258600U (en) * | 2015-12-17 | 2016-05-25 | 杨永亮 | Gas device is spared to combined type |
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|---|---|
| CN106894001A (en) | 2017-06-27 |
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