CN202281042U - Process pipeline system for external equipment - Google Patents
Process pipeline system for external equipment Download PDFInfo
- Publication number
- CN202281042U CN202281042U CN2011203790047U CN201120379004U CN202281042U CN 202281042 U CN202281042 U CN 202281042U CN 2011203790047 U CN2011203790047 U CN 2011203790047U CN 201120379004 U CN201120379004 U CN 201120379004U CN 202281042 U CN202281042 U CN 202281042U
- Authority
- CN
- China
- Prior art keywords
- inboard
- flow distributor
- air
- airflow
- outer side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a process pipeline system for external equipment, which includes an inner side airflow distributor and an outer side airflow distributor, wherein a process air inlet pipe is connected with the inner side airflow distributor and the outer side airflow distributor respectively; the inner side airflow distributor is connected with inner side nozzles respectively through two inner side airflow pipelines mutually connected in parallel; the outer side airflow distributor is connected with outer side nozzles respectively through two outer side airflow pipelines mutually connected in parallel; and the two inner side airflow pipelines are provided with airflow regulating valves respectively. The process pipeline system can be used for regulating airflow distribution from the one second part to the center of a wafer, and regulate the airflow at the partial area of the wafer, so as to improve the uniformity of the thickness of an epitaxial film of the external equipment, and regulate the film thickness distribution from the one second part to the center of the wafer.
Description
Technical field
The utility model relates to the epitaxial device in a kind of semiconductor fabrication, is specifically related to a kind of process pipeline system of epitaxial device.
Background technique
The process pipeline system of existing epitaxial device is as shown in Figure 1; Comprise inboard air-flow distributor, outside air-flow distributor; The process gas suction tude connects inboard air-flow distributor, outside air-flow distributor respectively; Side nozzle in inboard air-flow distributor connects through inboard airflow pipeline, outside air-flow distributor connects outer side nozzle respectively through two outside airflow pipelines parallel with one another; As shown in Figure 2, interior side nozzle connects the inboard cavity suction port in epitaxy technique chamber, two outer side nozzles connect respectively the epitaxy technique chamber about two outboard chambers suction ports.
Side nozzle and outer side nozzle in this epitaxial device, the process gas in the epitaxy technique must pass through form laminar flow and get into the participation reaction of epitaxy technique chamber then.Two important Control Parameter are arranged: electrical resistivity of epitaxy and thickness in epitaxy technique.The method of wherein regulating film thickness uniformity is the distribution of air flow of regulating inboard and the outside, thereby redistributes the air-flow through technology slice, thin piece center and peripheral, reaches the requirement of regulating film thickness uniformity.
In epitaxial device, process gas is from slice, thin piece surface flow mistake, and slice, thin piece can rotate, thereby obtains the uniformity of thickness preferably.But this regulative mode has a defective: at slice, thin piece edge to slice, thin piece 1/2 place; Air-flow is controlled by inboard air-flow distributor and outside air-flow distributor jointly; Therefore; Epitaxial film thickness in this zone distributes can be adjusted through the variation of inboard air-flow distributor and outside air-flow distributor, thereby can improve the uniformity of thickness.But slice, thin piece 1/2 has only the air communication mistake of inboard air-flow distributor control, therefore to the slice, thin piece center; Epitaxial film thickness in this zone distributes and can't regulate; Cause the thickness of slice, thin piece central point the thinnest, and the thickness at slice, thin piece 1/2 place is the thickest, the uniformity of thickness can't improve.
The model utility content
The utility model technical problem to be solved provides a kind of process pipeline system of epitaxial device, and it can improve the epitaxial film thickness uniformity of epitaxial device.
For solving the problems of the technologies described above, the technical solution of the process pipeline system of the utility model epitaxial device is:
Comprise inboard air-flow distributor, outside air-flow distributor, the process gas suction tude connects inboard air-flow distributor, outside air-flow distributor respectively; Said inboard air-flow distributor connects interior side nozzle respectively through two inboard airflow pipelines parallel with one another, and said outside air-flow distributor connects outer side nozzle respectively through two outside airflow pipelines parallel with one another; Said two inboard airflow pipelines are respectively arranged with barometric damper.
Said two interior side nozzles connect respectively the epitaxy technique chamber about two inboard cavity suction ports; Said two outer side nozzles connect respectively the epitaxy technique chamber about two outboard chambers suction ports.
The technique effect that the utility model can reach is:
The utility model can be realized the adjusting to the air-flow distribution of slice, thin piece 1/2 to slice, thin piece center; Realized air-flow adjustability to the slice, thin piece part area; Thereby can improve the epitaxial film thickness uniformity of epitaxial device, regulate the film thickness distribution of slice, thin piece 1/2 to slice, thin piece center.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is done further detailed explanation:
Fig. 1 is the schematic representation of the process pipeline system of existing technology epitaxial device;
Fig. 2 is the schematic representation of extension process cavity in the existing technology;
Fig. 3 is the schematic representation of the process pipeline system of the utility model epitaxial device;
Fig. 4 is the schematic representation of extension process cavity in the utility model.
Embodiment
As shown in Figure 3; The process pipeline system of the utility model epitaxial device; Comprise inboard air-flow distributor, outside air-flow distributor; The process gas suction tude connects inboard air-flow distributor, outside air-flow distributor respectively, and inboard air-flow distributor connects interior side nozzle respectively through two inboard airflow pipelines parallel with one another, and outside air-flow distributor connects outer side nozzle respectively through two outside airflow pipelines parallel with one another; Two inboard airflow pipelines are respectively arranged with barometric damper;
As shown in Figure 4, two interior side nozzles connect respectively the epitaxy technique chamber about two inboard cavity suction ports, two outer side nozzles connect respectively the epitaxy technique chamber about two outboard chambers suction ports.
The thickness of extension is that the distribution that will regulate thickness necessarily need be regulated the distribution of air-flow by the distribution decision of air-flow.The utility model with the air-flow of inboard air-flow distributor be divided into adjustable about two parts, can reach through the ratio of regulating two parts about inboard air-flow distributor like this and improve the inhomogeneity requirement of epitaxial film thickness.
The utility model is provided with two inboard cavity suction ports, makes inboard air-flow distributor be divided into two parts, thereby improves film thickness uniformity.
Claims (2)
1. the process pipeline system of an epitaxial device comprises inboard air-flow distributor, outside air-flow distributor, and the process gas suction tude connects inboard air-flow distributor, outside air-flow distributor respectively; It is characterized in that: said inboard air-flow distributor connects interior side nozzle respectively through two inboard airflow pipelines parallel with one another, and said outside air-flow distributor connects outer side nozzle respectively through two outside airflow pipelines parallel with one another; Said two inboard airflow pipelines are respectively arranged with barometric damper.
2. the process pipeline system of epitaxial device according to claim 1 is characterized in that: said two interior side nozzles connect respectively the epitaxy technique chamber about two inboard cavity suction ports; Said two outer side nozzles connect respectively the epitaxy technique chamber about two outboard chambers suction ports.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203790047U CN202281042U (en) | 2011-10-09 | 2011-10-09 | Process pipeline system for external equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203790047U CN202281042U (en) | 2011-10-09 | 2011-10-09 | Process pipeline system for external equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202281042U true CN202281042U (en) | 2012-06-20 |
Family
ID=46227210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203790047U Expired - Fee Related CN202281042U (en) | 2011-10-09 | 2011-10-09 | Process pipeline system for external equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202281042U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003886A (en) * | 2018-07-04 | 2018-12-14 | 上海晶盟硅材料有限公司 | The preparation method of middle thickness extension |
-
2011
- 2011-10-09 CN CN2011203790047U patent/CN202281042U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109003886A (en) * | 2018-07-04 | 2018-12-14 | 上海晶盟硅材料有限公司 | The preparation method of middle thickness extension |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI589726B (en) | Shared gas panels in plasma processing chambers employing multi-zone gas feeds | |
| TWI507561B (en) | Showerhead integrating intake and exhaust | |
| JP6837733B2 (en) | Equipment and methods for improving wafer uniformity | |
| WO2011043961A3 (en) | Epitaxial chamber with cross flow | |
| CN106894001B (en) | The even device of air of combined type | |
| SG145663A1 (en) | Method and apparatus for controlling gas flow to a processing chamber | |
| SG145669A1 (en) | Method and apparatus for controlling gas flow to a processing chamber | |
| WO2011149508A3 (en) | Apparatus and method for temperature control of a semiconductor substrate support | |
| CN104975271B (en) | Inlet duct and semiconductor processing equipment | |
| WO2012148801A3 (en) | Semiconductor substrate processing system | |
| WO2009024595A3 (en) | Culture system and method for immunogenicity and immunofunction testing in vitro | |
| EP2740542A3 (en) | Shower device | |
| CN207811933U (en) | A kind of source bottle pressure control system for diffusion furnace | |
| CN110400768B (en) | Reaction chamber | |
| PH12016501973A1 (en) | A pick and place device with automatic pick-up-height adjustment and a method and a computer program product to automatically adjust the pick-up-height of a pick and place device | |
| WO2019119757A1 (en) | Mass flow controller | |
| CN202281042U (en) | Process pipeline system for external equipment | |
| US9478440B2 (en) | Low-pressure chemical vapor deposition apparatus and thin-film deposition method thereof | |
| KR20190066069A (en) | Annealing process methods, process chambers and annealing equipment | |
| CN211897166U (en) | Air intake device and semiconductor device | |
| CN203134753U (en) | Air inlet apparatus used for semiconductor reaction chamber | |
| WO2023279445A1 (en) | Machine table and wafer processing device | |
| WO2011028617A3 (en) | Apparatus and methods for enhanced fluid delivery on bevel etch applications | |
| CN104419912A (en) | Gas inlet device and reaction cavity | |
| CN103839746A (en) | Etching equipment process gas gas-feeding device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131231 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20131231 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120620 Termination date: 20151009 |
|
| EXPY | Termination of patent right or utility model |