CN114790574B - Flow-adjustable vertical silicon epitaxial reaction chamber air inlet device - Google Patents

Flow-adjustable vertical silicon epitaxial reaction chamber air inlet device Download PDF

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Publication number
CN114790574B
CN114790574B CN202210530471.8A CN202210530471A CN114790574B CN 114790574 B CN114790574 B CN 114790574B CN 202210530471 A CN202210530471 A CN 202210530471A CN 114790574 B CN114790574 B CN 114790574B
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flow
air inlet
flow regulating
plate
runner
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CN114790574A (en
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梅德庆
陈宇宏
汪延成
谷子良
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Zhejiang University ZJU
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Zhejiang University ZJU
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a flow-adjustable vertical silicon epitaxial reaction chamber air inlet device. The air inlet device comprises an air inlet structure, a supporting ring, an annular split-flow cavity structure and a flow regulating mechanism; the air inlet structure and the support ring are arranged in the middle of the flow regulating mechanism, and the flow regulating mechanism is arranged on the upper end surface of the annular flow dividing cavity structure; the air inlet structure, the annular shunt cavity structure and the flow regulating mechanism are sequentially communicated; the flow regulating mechanism comprises a rotating seat and a regulating plate layer, and the rotating seat, the air inlet structure, the regulating plate layer and the annular split-flow cavity structure are sequentially and coaxially connected from top to bottom; the air inlet structure is connected with the adjusting plate layer through a supporting ring. The invention can transport the uniform airflow of the components to the silicon wafer substrate, and can change the opening and closing areas of the air inlets of the outer flow channel and the inner flow channel by driving the rotating plate, thereby adjusting the flow ratio among different flow channels, and effectively improving and adjusting the thickness uniformity of the surface of the substrate in the radial direction of the substrate.

Description

Flow-adjustable vertical silicon epitaxial reaction chamber air inlet device
Technical Field
The invention relates to a reaction chamber air inlet device, in particular to a flow-adjustable vertical silicon epitaxial reaction chamber air inlet device.
Background
The silicon epitaxy process is to grow a layer of film with the crystal lattice completely consistent with that of the substrate material on the original silicon substrate material by adopting a chemical vapor deposition method, and dope the epitaxial layer to form P-type or N-type doping so as to regulate and control the resistivity. The epitaxy process is usually carried out at high temperature, the uniformity of the thickness of the epitaxially grown film determines the yield of the subsequent device fabrication, and the thickness and doping uniformity of the epitaxial layer are mainly affected by the uniformity of the process gas.
The general silicon epitaxial reaction chamber comprises an air inlet device, a quartz cavity, a graphite base, a heating device, an exhaust device and the like. When the epitaxial growth device works, the graphite base is heated by the heating device, heat is conducted onto the silicon wafer substrate, carrier gas, reaction source gas, doping gas and the like are introduced into the air inlet device when the surface temperature of the substrate reaches a proper value of epitaxial growth, process gas is transported to the surface of the silicon wafer substrate by the air inlet device to carry out deposition growth, unreacted process gas and reaction byproducts are discharged by the exhaust device, and epitaxial layers with specified thickness are sequentially grown in an epitaxial mode.
The silicon wafer substrate is arranged on the continuously rotating graphite base, so that the thickness condition of the substrate surface generally shows a radial average rule, but when the epitaxial growth is actually carried out, the gas concentration distribution of each radial area of the substrate surface is uneven, the adjustment is difficult, and the thickness and resistivity uniformity of an epitaxial growth layer are deeply influenced.
Disclosure of Invention
In order to solve the problems in the background technology, the invention provides the vertical annular air inlet device which is uniform in air flow mixing and adjustable in air flow at different radial positions on the surface of a substrate.
The technical scheme adopted by the invention is as follows:
the air inlet device of the silicon epitaxial reaction chamber comprises an air inlet structure, a supporting ring, an annular split-flow cavity structure and a flow regulating mechanism; the air inlet structure and the support ring are arranged in the middle of the flow regulating mechanism, and the flow regulating mechanism is arranged on the upper end surface of the annular flow dividing cavity structure; the air inlet structure, the annular shunt cavity structure and the flow regulating mechanism are sequentially communicated.
The flow regulating mechanism comprises a rotating seat and a regulating plate layer, and the rotating seat, the air inlet structure, the regulating plate layer and the annular split-flow cavity structure are sequentially and coaxially connected from top to bottom; the air inlet structure is connected with the adjusting plate layer through a supporting ring.
The rotating seat of the flow regulating mechanism comprises a rotating plate II, a rotating plate I and a rotating base which are coaxially and sequentially arranged in a stacked manner from top to bottom.
The rotating plate II can rotate around the axis of the rotating plate II on the upper end face of the rotating plate I when rotating; the rotating plate I can rotate around the axis of the rotating plate I on the upper end face of the rotating base during rotation.
Two opposite sides of the outer periphery bottom edge of the rotating plate II are respectively provided with a rotating plate II rotating sliding block along the axial direction, and the two rotating plate II rotating sliding blocks are respectively provided with a rotating plate II locking hole along the radial direction of the rotating plate II; two fan-shaped rotating plate I rotating grooves are formed in two symmetrical sides of the upper end face of the rotating plate I, and fan-shaped rotating plate I locking grooves are formed in the outer peripheral side faces of the rotating plate I below the two rotating plate I rotating grooves respectively; each rotating plate I locking groove is respectively communicated with a corresponding rotating plate I rotating groove; every rotatory slider of rotor plate II is installed in a rotor plate I rotatory groove to the slip down respectively, and rotor plate II rotatory slider's rotor plate II locking hole just faces rotor plate I locking groove, and rotor plate II rotatory slider only can rotate along circumference in rotor plate I rotatory inslot.
When the rotating slide block of the rotating plate II rotates to the appointed position, the locking hole of the rotating plate II is limited at the appointed position in the locking groove of the rotating plate I through the set screw penetrating through the locking groove of the rotating plate I.
The two opposite sides of the outer periphery bottom edge of the rotating plate I are respectively provided with a rotating plate I rotating slide block along the axial direction, and the two rotating plate I rotating slide blocks are respectively provided with a rotating plate I locking hole along the radial direction of the rotating plate I; the rotating base is cylindrical, two fan-shaped rotating base rotating grooves are formed in two symmetrical sides of the upper end face of the rotating base, fan-shaped rotating base locking grooves are formed in the outer peripheral side faces of the rotating base below the two rotating base rotating grooves respectively, and each rotating plate I locking groove is communicated with a corresponding rotating plate I rotating groove respectively; each rotating plate I rotating slide block is respectively installed in a rotating base rotating groove in a downward sliding mode, a rotating plate I locking hole of each rotating plate I rotating slide block is opposite to the corresponding rotating base locking groove, and the rotating plate I rotating slide blocks can only rotate in the rotating base rotating groove along the circumferential direction.
When the rotating plate I rotates the sliding block to the appointed position, the locking hole of the rotating plate I is limited at the appointed position in the locking groove of the rotating base through the set screw penetrating through the locking groove of the rotating base.
The same positions of the peripheral side surfaces of the rotating plate II and the rotating plate I are respectively provided with a rotating strip for driving the rotating plate II and the rotating plate I to rotate.
The regulating plate layer of the flow regulating mechanism comprises an outer flow channel flow regulating plate, a middle flow channel flow regulating plate and a flow regulating motherboard which are coaxially and orderly overlapped from top to bottom and are mutually communicated.
The outer runner flow regulating plate comprises two concentric outer runner rings, the two outer runner rings are connected through a plurality of rib plates, and a plurality of outer runner flow regulating holes are uniformly arranged on one outer runner ring at intervals along the circumferential direction of the outer side of the outer runner flow regulating plate.
The middle runner flow regulating plate comprises two concentric middle runner rings, the two middle runner rings are connected through a plurality of rib plates, and a plurality of middle runner flow regulating holes are uniformly arranged on one middle runner ring on the inner side of the middle runner flow regulating plate at intervals along the circumferential direction.
The flow regulating motherboard is in a circular ring shape, a plurality of outer flow channel air inlets are uniformly spaced on the inner side of the flow regulating motherboard annular surface along the circumferential direction, and a plurality of middle flow channel air inlets are uniformly spaced on the outer side of the flow regulating motherboard annular surface along the circumferential direction.
An annular gap formed between two outer runner rings of the outer runner flow regulating plate is a middle runner communication groove, and a central through hole of one outer runner ring at the inner side of the outer runner flow regulating plate is a first inner runner communication hole; an annular gap formed between two middle runner rings of the middle runner flow regulating plate is an outer runner communication groove, and a central through hole of one middle runner ring at the inner side of the middle runner flow regulating plate is a second inner runner communication hole; the central through hole of the flow regulating motherboard is an air inlet hole of the inner runner.
The first inner runner communication hole, the second inner runner communication hole and the inner runner air inlet hole are communicated in sequence and have the same diameter; the middle flow channel communicating groove, each middle flow channel flow regulating hole and each middle flow channel air inlet hole are opposite to and communicated with each other from top to bottom in sequence; the outer flow regulating holes, the outer flow communicating grooves and the outer flow air inlets are opposite to and communicated with each other from top to bottom.
Each middle runner flow regulating hole is opposite to one middle runner air inlet hole; each outer flow regulating hole is opposite to one corresponding outer flow air inlet hole.
The aperture of the outer flow channel air inlet hole of the flow regulating motherboard is equal to the aperture of the outer flow channel flow regulating hole of the outer flow channel flow regulating plate; the aperture of the middle runner air inlet hole of the flow regulating motherboard is equal to the aperture of the middle runner flow regulating hole of the middle runner flow regulating plate; the aperture of the outer flow channel air inlet hole of the flow regulating motherboard is smaller than that of the middle flow channel air inlet hole.
The ring width of the middle flow channel communicating groove of the outer flow channel flow regulating plate is equal to the aperture of the middle flow channel air inlet hole of the flow regulating motherboard; the annular width of the outer flow channel communication groove of the middle flow channel flow regulating plate is equal to the aperture of the outer flow channel air inlet hole of the flow regulating motherboard.
The number of the outer-flow-channel air inlets of the flow regulating motherboard is equal to the number of the outer-flow-channel flow regulating holes of the outer-flow-channel flow regulating plate; the number of the middle runner air inlets of the flow regulating motherboard is equal to the number of the middle runner flow regulating holes of the middle runner flow regulating plate; the number of the outer flow channel air inlet holes is greater than the number of the middle flow channel air inlet holes.
The center of the outer flow passage flow regulating plate is provided with an upward tubular rotating shaft I; the center of the middle runner flow regulating plate is upwards provided with a rotating shaft II, and the outer diameter of the rotating shaft II is equal to the inner diameter of the rotating shaft I.
The rotating shaft II penetrates through the center of the rotating shaft I and upwards penetrates through a rotating seat of the flow regulating mechanism, and is further fixedly connected to the center of the rotating plate II; the rotating shaft I upwards penetrates through the rotating seat of the flow regulating mechanism and is further fixedly connected to the center of the rotating plate I.
The outer side surface of the rotating shaft I is sleeved with a magnetic fluid sealing device for sealing.
When the rotating plate II rotates, the rotating shaft II and the middle runner flow regulating plate are driven to rotate around the axis of the rotating plate II, so that the communication area between the right opposite middle runner flow regulating hole and the middle runner air inlet hole is changed, and the effect of regulating the middle runner air inlet flow is achieved.
When the rotating plate I rotates, the rotating shaft I and the outer flow regulating plate are driven to rotate around the axis of the rotating plate I, so that the communication area between the opposite outer flow regulating hole and the outer flow air inlet hole is changed, and the effect of regulating the air inflow of the outer flow is achieved.
The diameters of the outer flow channel flow regulating plate and the middle flow channel flow regulating plate are the same, and the diameter of the flow regulating motherboard is larger than that of the middle flow channel flow regulating plate.
The inner diameter of the supporting ring is equal to the diameter of the middle runner flow regulating plate, and the thickness of the supporting ring is equal to the sum of the thicknesses of the outer runner flow regulating plate and the middle runner flow regulating plate.
The support ring is sleeved on the outer side surfaces of the outer flow passage flow regulating plate and the middle flow passage flow regulating plate, the upper end surface and the lower end surface of the support ring are respectively welded with the air inlet structure and the flow regulating motherboard, and the outer flow passage flow regulating plate and the middle flow passage flow regulating plate are sealed between the air inlet structure and the flow regulating motherboard.
The support ring does not block the air inlet structure and the through holes of the flow regulating motherboard.
The air inlet structure is disc-shaped, and the bottom of the disc-shaped air inlet structure extends outwards in the radial direction and is fixedly connected with the upper end surface of the support ring; the center of the air inlet structure is provided with an axial communication hole, and a mixing cavity, a diffusion hole and a diffusion cavity which are sequentially communicated from top to bottom are formed in the air inlet structure; the communication hole is not communicated with the mixing cavity, and the diffusion cavity is communicated with the air inlet structure to assist the air flow to diffuse.
The center top surface of the mixing cavity is downwards provided with a conical flow expansion structure, and the center of the outer top surface of the conical flow expansion structure is connected with a communication hole; a plurality of tangential air inlet channels connected with an external gas pipeline are uniformly arranged on the side wall of the mixing cavity at intervals and are used for introducing process gas and mixing; the expansion hole is a circular truncated cone-shaped cavity, and the diameter of the top surface of the circular truncated cone shape is smaller than that of the mixing cavity; the junction of the diffusion hole and the diffusion cavity is a larger round angle.
The diffusion chamber is a downward horn-shaped chamber, and each transition part of the inner flow channel of the diffusion chamber is provided with a round corner for stable diffusion of air flow, and the diameter of the bottom surface of the diffusion chamber is equal to the diameter of the outer flow channel flow regulating plate.
The rotating shaft I upwards penetrates through the communication hole of the air inlet structure and then penetrates through the rotating plate I of the rotating seat of the flow regulating mechanism, and the diameter of the rotating shaft I is equal to that of the communication hole.
The annular flow distribution cavity structure is disc-shaped, and the upper part of the disc-shaped annular flow distribution cavity structure extends radially and is fixedly connected with the lower end face of the outer edge of the flow regulation motherboard.
The inside of the annular flow distribution cavity structure is provided with a columnar flow distribution cavity communicated with the annular flow distribution cavity structure, a primary flow distribution plate and a secondary flow distribution plate which are arranged at intervals from top to bottom are arranged in the flow distribution cavity, and the primary flow distribution plate and the secondary flow distribution plate divide the flow distribution cavity into three layers of cavities which are mutually circulated from top to bottom; the diameters of the primary flow dividing plate and the secondary flow dividing plate are equal to the inner diameter of the flow dividing cavity.
The split flow cavity is internally provided with two cylinders which are arranged at intervals and concentric with the split flow cavity, the two cylinders divide the split flow cavity into three non-communicated interval areas which are radially distributed from the center of a circle, namely a cylindrical central interval area, a circular middle interval area and a circular outer interval area in sequence; the height of the two cylinders is equal to or greater than the height of the diversion cavity.
The upper end face of one cylinder close to the center of the flow distribution cavity is positioned at the lower end face of the inner edge of the flow regulation motherboard, and the upper end face of one cylinder far away from the center of the flow distribution cavity is positioned at the lower end face of the interval area between the outer flow channel air inlet hole and the middle flow channel air inlet hole of the flow regulation motherboard.
The inner runner air inlet of the flow regulating motherboard is communicated with the central interval region of the flow dividing cavity, the middle runner air inlet of the flow regulating motherboard is communicated with the middle interval region of the flow dividing cavity, and the outer runner air inlet of the flow regulating motherboard is communicated with the outer interval region of the flow dividing cavity.
The cavity of the central interval area on the upper side of the primary flow dividing plate is an inner flow passage which is communicated with an air inlet hole of the inner flow passage; the cavity of the middle interval area on the upper side of the primary flow dividing plate is a middle flow passage which is communicated with the air inlet holes of each middle flow passage; the cavity of the outer interval area on the upper side of the primary flow dividing plate is an outer flow channel which is communicated with each outer flow channel air inlet hole.
And (3) introducing process gas into an air inlet structure of the air inlet device, and finally flowing out of the annular shunt cavity structure to perform silicon epitaxial growth reaction.
A plurality of first-stage flow-dividing holes are uniformly arranged on the first-stage flow-dividing plate at intervals, and a plurality of second-stage flow-dividing holes are uniformly arranged on the second-stage flow-dividing plate at intervals; the aperture of the first-stage flow-dividing aperture is larger than that of the second-stage flow-dividing aperture; the number of the first-stage flow-dividing holes is smaller than that of the second-stage flow-dividing holes, namely the second-stage flow-dividing holes are distributed more densely, and the aperture is smaller.
The beneficial effects of the invention are as follows:
the invention provides a flow-adjustable vertical silicon epitaxial reaction chamber air inlet device, wherein an air inlet structure adopts tangential air inlet and is provided with a conical flow expansion structure; the annular split flow cavity is designed in a two-stage split flow mode, the inner flow channel is designed in a cylindrical mode, and the middle flow channel and the outer flow channel are designed in an annular mode; the flow regulating mechanism controls the opening and closing area of the air inlet hole of the outer flow channel and the middle flow channel on the flow regulating motherboard by rotating the flow regulating plate. The gain effect is: different process gases can be fully diffused after being uniformly mixed in the air inlet structure, the air inlet flow of the outer flow channel and the air inlet flow of the inner flow channel can be independently regulated by utilizing the flow regulating mechanism, the concentration distribution of the process gases above different radial positions of the silicon wafer substrate can be effectively controlled by changing the flow ratio between the different flow channels, and further the thickness uniformity of the silicon wafer epitaxial layer can be effectively improved.
Drawings
FIG. 1 is an exploded view of the general assembly of the present invention;
FIG. 2 is an exploded view of the flow regulating mechanism of the present invention;
FIG. 3 is an enlarged exploded view of the rotating base, the rotating plate I, and the rotating plate II of the flow regulating mechanism of the present invention;
fig. 4 (a) is a top view of the air intake structure of the present invention;
FIG. 4 (b) is a cross-sectional view of the air intake structure of the present invention;
FIG. 5 (a) is a top view of the annular manifold structure of the present invention;
FIG. 5 (b) is a cross-sectional view of the annular manifold structure of the present invention;
FIG. 6 is a schematic diagram of an outer flow passage flow regulating plate of the present invention regulating the flow of outer flow passage intake air;
FIG. 7 is a schematic diagram of the flow of intake air in the flow channel of the present invention being regulated by the flow channel regulating plate;
in the figure: 1. an air intake structure, 2, a support ring, 3, an annular split-flow chamber structure, 4, a flow regulating mechanism, 10, a magnetic fluid sealing device, 11, a first inner flow passage communication hole, 12, an outer flow passage flow regulating plate, 13, an intermediate flow passage communication groove, 14, an outer flow passage flow regulating hole, 15, an intermediate flow passage flow regulating plate, 16, an outer flow passage communication groove, 17, an intermediate flow passage flow regulating hole, 18, a flow regulating motherboard, 19, an outer flow passage air intake hole, 20, an intermediate flow passage air intake hole, 21, an inner flow passage air intake hole, 22, a second inner flow passage communication hole, 23, a rotation shaft II,24, a rotation shaft I,25, a rotation base, 26, a rotation plate I,27, rotating plate II,43, tangential air inlet channel, 45, mixing chamber, 46, flow expansion hole, 47, flow expansion chamber, 48, communication hole, 49, conical flow expansion structure, 51, rotating plate II rotating slide block, 52, rotating plate II locking hole, 53, rotating plate I locking groove, 54, rotating plate I rotating slide block, 55, rotating plate I locking hole, 56, rotating base locking groove, 57, rotating base rotating groove, 58, rotating plate I rotating groove, 61, inner flow channel, 62, middle flow channel, 63, outer flow channel, 64, first-stage flow distribution hole, 65, second-stage flow distribution hole, 66, first-stage flow distribution plate, 67, second-stage flow distribution plate.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings and specific examples.
As shown in fig. 1, the air inlet device of the invention comprises an air inlet structure 1, a support ring 2, an annular split-flow cavity structure 3 and a flow regulating mechanism 4; the air inlet structure 1 and the support ring 2 are arranged in the middle of the flow regulating mechanism 4, and the flow regulating mechanism 4 is arranged on the upper end surface of the annular split-flow cavity structure 3; the air inlet structure 1, the annular split-flow cavity structure 3 and the flow regulating mechanism 4 are communicated in sequence. The flow regulating mechanism 4 comprises a rotating seat and an adjusting plate layer, and the rotating seat, the air inlet structure 1, the adjusting plate layer and the annular split-flow cavity structure 3 are coaxially connected from top to bottom in sequence; the air inlet structure 1 and the adjusting plate layer are connected through a supporting ring 2.
As shown in fig. 2 and 3, the rotary seat of the flow rate adjusting mechanism 4 includes a rotary plate II27, a rotary plate I26, and a rotary base 25 which are coaxially stacked in this order from top to bottom; the rotating plate II27 can rotate around the axis of the rotating plate II on the upper end surface of the rotating plate I26 during rotation; the rotation plate I26 is rotatable about its own axis on the upper end face of the rotation base 25 when rotated.
The two opposite sides of the outer periphery bottom edge of the rotating plate II27 are respectively provided with a rotating plate II rotating sliding block 51 along the axial direction, and the two rotating plate II rotating sliding blocks 51 are respectively provided with a rotating plate II locking hole 52 along the radial direction of the rotating plate II 27; two fan-shaped rotating plate I rotating grooves 58 are formed in two symmetrical sides of the upper end face of the rotating plate I26, and fan-shaped rotating plate I locking grooves 53 are formed in the peripheral side faces of the rotating plate I26 below the two rotating plate I rotating grooves 58 respectively; each rotating plate I locking groove 53 is respectively communicated with a corresponding rotating plate I rotating groove 58; each rotating plate II rotating slider 51 is slidably mounted in one rotating plate I rotating groove 58 downward, and the rotating plate II locking holes 52 of the rotating plate II rotating sliders 51 are opposite to the rotating plate I locking grooves 53, and the rotating plate II rotating sliders 51 can only rotate circumferentially in the rotating plate I rotating grooves 58.
When the rotating plate II rotating slider 51 rotates to a designated position, the rotating plate II locking hole 52 is restrained at the designated position in the rotating plate I locking groove 53 by a set screw passing through the rotating plate I locking groove 53.
The two opposite sides of the outer periphery bottom edge of the rotating plate I26 are provided with rotating plate I rotating sliding blocks 54 along the axial direction, and the two rotating plate I rotating sliding blocks 54 are provided with rotating plate I locking holes 55 along the radial direction of the rotating plate I26; the rotating base 25 is cylindrical, two fan-shaped rotating base rotating grooves 57 are formed in two symmetrical sides of the upper end face of the rotating base 25, fan-shaped rotating base locking grooves 56 are formed in the peripheral side face of the rotating base 25 below the two rotating base rotating grooves 57 respectively, and each rotating plate I locking groove 53 is communicated with a corresponding rotating plate I rotating groove 58 respectively; each of the rotating plate I rotating sliders 54 is slidably mounted downward in one of the rotating base rotating grooves 57, and the rotating plate I locking holes 55 of the rotating plate I rotating sliders 54 are opposed to the rotating base locking grooves 56, and the rotating plate I rotating sliders 54 can only rotate circumferentially in the rotating base rotating grooves 57.
When the rotating plate I rotating slider 54 rotates to a designated position, the rotating plate I locking hole 55 is restrained at the designated position in the rotating base locking groove 56 by a set screw passing through the rotating base locking groove 56.
The rotation bars for driving the rotation plates II27 and I26 to rotate are provided at the same positions on the outer peripheral sides of the rotation plates II27 and I26.
As shown in fig. 2, the regulating plate layer of the flow regulating mechanism 4 includes an outer-channel flow regulating plate 12, a middle-channel flow regulating plate 15, and a flow regulating motherboard 18, which are coaxially stacked in this order from top to bottom and are communicated with each other.
The outer flow-path flow-rate regulating plate 12 comprises two concentric outer flow-path circular rings, the two outer flow-path circular rings are connected through a plurality of rib plates, and a plurality of outer flow-path flow-rate regulating holes 14 are uniformly arranged on one outer flow-path circular ring of the outer side of the outer flow-path flow-rate regulating plate 12 at intervals along the circumferential direction.
The middle runner flow regulating plate 15 comprises two concentric middle runner rings, the two middle runner rings are connected through a plurality of rib plates, and a plurality of middle runner flow regulating holes 17 are uniformly arranged on one middle runner ring on the inner side of the middle runner flow regulating plate 15 at intervals along the circumferential direction.
The flow regulating motherboard 18 is annular, a plurality of outer runner air inlets 19 are uniformly spaced apart along the circumferential direction on the inner side of the annular surface of the flow regulating motherboard 18, and a plurality of middle runner air inlets 20 are uniformly spaced apart along the circumferential direction on the outer side of the annular surface of the flow regulating motherboard 18.
An annular gap formed between two outer runner rings of the outer runner flow regulating plate 12 is a middle runner communication groove 13, and a central through hole of one outer runner ring at the inner side of the outer runner flow regulating plate 12 is a first inner runner communication hole 11; an annular gap formed between two middle runner rings of the middle runner flow regulating plate 15 is an outer runner communication groove 16, and a central through hole of one middle runner ring at the inner side of the middle runner flow regulating plate 15 is a second inner runner communication hole 22; the central through hole of the flow regulating motherboard 18 is an inner runner air inlet 21.
The first inner flow passage communication hole 11, the second inner flow passage communication hole 22 and the inner flow passage air intake hole 21 are communicated in sequence and have the same diameter; the middle flow channel communicating groove 13, each middle flow channel flow rate regulating hole 17 and each middle flow channel air inlet hole 20 are opposite to and communicated with each other from top to bottom in sequence; each outer flow regulating hole 14, each outer flow communicating groove 16 and each outer flow air inlet hole 19 are opposite to and communicated with each other from top to bottom in sequence; each middle runner flow regulating hole 17 is opposite to one middle runner air inlet hole 20; each outer flow passage flow adjustment aperture 14 is directly opposite a respective outer flow passage inlet aperture 19.
The aperture of the outer flow passage air inlet hole 19 of the flow passage motherboard 18 is equal to the aperture of the outer flow passage air inlet hole 14 of the outer flow passage air adjustment plate 12; the aperture of the middle runner air inlet hole 20 of the flow regulating motherboard 18 is equal to the aperture of the middle runner flow regulating hole 17 of the middle runner flow regulating plate 15; the outer flow channel inlet holes 19 of the flow regulating motherboard 18 have a smaller aperture than the middle flow channel inlet holes 20.
The ring width of the middle runner communication groove 13 of the outer runner flow regulating plate 12 is equal to the aperture of the middle runner air inlet hole 20 of the flow regulating motherboard 18; the outer flow channel communication groove 16 of the middle flow channel flow regulating plate 15 has a ring width equal to the aperture of the outer flow channel air inlet hole 19 of the flow regulating motherboard 18.
The number of outer-flow-path air intake holes 19 of the flow-regulating motherboard 18 is equal to the number of outer-flow-path flow-regulating holes 14 of the outer-flow-path flow-regulating plate 12; the number of the middle runner air inlet holes 20 of the flow regulating motherboard 18 is equal to the number of the middle runner flow regulating holes 17 of the middle runner flow regulating plate 15; the number of outer flow passage intake holes 19 is greater than the number of intermediate flow passage intake holes 20.
The center of the outer flow passage flow regulating plate 12 is provided with an upward tubular rotating shaft I24; the center of the middle runner flow regulating plate 15 is provided with a rotating shaft II23 upwards, and the outer diameter of the rotating shaft II23 is equal to the inner diameter of the rotating shaft I24.
The rotating shaft II23 penetrates through the center of the rotating shaft I24 and upwards penetrates through the rotating seat of the flow regulating mechanism 4, and is further fixedly connected to the center of the rotating plate II 27; the rotating shaft I24 upwards penetrates through the rotating seat of the flow regulating mechanism 4 and is further fixedly connected to the center of the rotating plate I26; the magnetic fluid sealing device 10 is sleeved on the outer side surface of the rotating shaft I24 for sealing.
When the rotating plate II27 rotates, the rotating shaft II23 and the middle runner flow regulating plate 15 are driven to rotate around the axis of the rotating plate II, so that the communication area between the right opposite middle runner flow regulating hole 17 and the middle runner air inlet hole 20 is changed, and the effect of regulating the air inlet flow of the middle runner 62 is achieved.
When the rotating plate I26 rotates, the rotating shaft I24 and the outer flow-rate regulating plate 12 are driven to rotate around the axis of the rotating plate I, so that the communication area between the opposite outer flow-rate regulating hole 14 and the outer flow-rate air inlet 19 is changed, and the effect of regulating the air inlet flow rate of the outer flow channel 63 is achieved.
The diameters of the outer runner flow regulating plate 12 and the middle runner flow regulating plate 15 are the same, and the diameter of the flow regulating motherboard 18 is larger than that of the middle runner flow regulating plate 15; the inner diameter of the support ring 2 is equal to the diameter of the middle flow passage flow adjustment plate 15, and the thickness of the support ring 2 is equal to the sum of the thicknesses of the outer flow passage flow adjustment plate 12 and the middle flow passage flow adjustment plate 15.
The support ring 2 is sleeved on the outer side surfaces of the outer flow passage flow regulating plate 12 and the middle flow passage flow regulating plate 15, the upper end surface and the lower end surface of the support ring 2 are respectively welded with the air inlet structure 1 and the flow regulating motherboard 18, and the outer flow passage flow regulating plate 12 and the middle flow passage flow regulating plate 15 are sealed between the air inlet structure 1 and the flow regulating motherboard 18. The support ring 2 does not block the air intake structure 1 and the through holes of the flow regulating motherboard 18.
As shown in a and b of fig. 4, the air inlet structure 1 is disc-shaped, and the bottom of the disc-shaped air inlet structure 1 extends outwards radially and is fixedly connected with the upper end surface of the support ring 2; the center of the air inlet structure 1 is provided with an axial communication hole 48, and the inside of the air inlet structure 1 is provided with a mixing cavity 45, a diffusion hole 46 and a diffusion cavity 47 which are sequentially communicated from top to bottom; the communication hole 48 is not communicated with the mixing chamber 45, and the diffusion chamber 47 penetrates the air intake structure 1 to assist the air flow diffusion.
The center top surface of the mixing cavity 45 is downwards provided with a conical flow expansion structure 49, and the center of the outer top surface of the conical flow expansion structure 49 is connected with a communication hole 48; a plurality of tangential air inlet channels 43 connected with an external air pipeline are uniformly arranged on the side wall of the mixing cavity 45 at intervals and are used for introducing and mixing process gases; the flow expansion hole 46 is a truncated cone-shaped cavity, and the diameter of the top surface of the truncated cone shape is smaller than that of the mixing cavity 45; the junction of the diffuser bore 46 and the diffuser chamber 47 is a relatively large rounded corner.
The diffusion chamber 47 is a downward horn-shaped chamber, and each transition part of the inner flow passage of the diffusion chamber 47 is provided with a round corner for stable diffusion of air flow, and the diameter of the bottom surface of the diffusion chamber 47 is equal to the diameter of the outer flow passage flow regulating plate 12.
The rotating shaft I24 passes through the communication hole 48 of the air inlet structure 1 upwards and then passes through the rotating plate I26 of the rotating seat of the flow adjusting mechanism 4, and the diameter of the rotating shaft I24 is equal to the diameter of the communication hole 48.
As shown in a and b of fig. 5, the annular shunt cavity structure 3 is disc-shaped, and the upper part of the disc-shaped annular shunt cavity structure 3 extends radially and is fixedly connected with the lower end face of the outer edge of the flow regulating motherboard 18; the annular flow distribution cavity structure 3 is internally provided with a columnar flow distribution cavity communicated with the annular flow distribution cavity structure 3, a primary flow distribution plate 66 and a secondary flow distribution plate 67 which are arranged at intervals from top to bottom are arranged in the flow distribution cavity, and the primary flow distribution plate 66 and the secondary flow distribution plate 67 divide the flow distribution cavity into three layers of cavities which are mutually circulated from top to bottom; the primary and secondary flow splitter plates 66 and 66 have diameters equal to the diameter of the splitting cavity.
The split flow cavity is internally provided with two cylinders which are arranged at intervals and concentric with the split flow cavity, the two cylinders divide the split flow cavity into three non-communicated interval areas which are radially distributed from the center of a circle, namely a cylindrical central interval area, a circular middle interval area and a circular outer interval area in sequence; the height of the two cylinders is equal to or greater than the height of the diversion cavity.
The upper end surface of one cylinder close to the center of the split flow chamber is positioned at the lower end surface of the inner edge of the flow regulating motherboard 18, and the upper end surface of one cylinder far from the center of the split flow chamber is positioned at the lower end surface of the interval region between the outer flow channel air inlet hole 19 and the middle flow channel air inlet hole 20 of the flow regulating motherboard 18.
The inner runner inlet holes 21 of the flow regulating motherboard 18 communicate with the central spaced region of the flow splitting chamber, the respective middle runner inlet holes 20 of the flow regulating motherboard 18 communicate with the intermediate spaced region of the flow splitting chamber, and the respective outer runner inlet holes 19 of the flow regulating motherboard 18 communicate with the outer spaced region of the flow splitting chamber.
The cavity of the central interval area on the upper side of the primary flow dividing plate 66 is an inner flow passage 61, and the inner flow passage 61 is communicated with the inner flow passage air inlet 21; the cavity of the middle interval area on the upper side of the primary flow dividing plate 66 is a middle flow passage 62, and the middle flow passage 62 is communicated with each middle flow passage air inlet hole 20; the outer space area of the upper side of the primary flow dividing plate 66 is provided with an outer flow channel 63, and the outer flow channel 63 is communicated with each outer flow channel air inlet hole 19.
A plurality of first-stage flow-dividing holes 64 are uniformly arranged on the first-stage flow-dividing plate 66 at intervals, and a plurality of second-stage flow-dividing holes 65 are uniformly arranged on the second-stage flow-dividing plate 67 at intervals; the aperture of the first-stage flow-dividing aperture 64 is larger than the aperture of the second-stage flow-dividing aperture 65; the number of primary flow apertures 64 is smaller than the number of secondary flow apertures 65, i.e., the secondary flow apertures 65 are more densely distributed and have smaller apertures.
And (3) introducing process gas into the air inlet structure 1 of the air inlet device, and finally flowing out of the annular shunt cavity structure 3 to perform silicon epitaxial growth reaction.
The specific implementation process is as follows:
as shown in fig. 6 and 7, the rotating plate II27 and the rotating plate I26 are rotated around their own axes by toggling the rotating strips of the rotating plates II27 and I26; the rotating plate II27 rotates to drive the rotating shaft II23 and the middle runner flow regulating plate 15 to rotate around the axis of the rotating plate II, so that the communication area between the opposite middle runner flow regulating hole 17 and the middle runner air inlet hole 20 is changed, and the air inlet flow of the middle runner 62 can be regulated; the larger the communication area is, the larger the intake air flow is, the smaller the communication area is, and the smaller the intake air flow is; the rotating plate I26 rotates to drive the rotating shaft I24 and the outer flow regulating plate 12 to rotate around the axis of the rotating plate I, so that the communication area between the opposite outer flow regulating hole 14 and the outer flow inlet 19 is changed, and the air inlet flow of the outer flow channel 63 can be regulated; when the rotating plate II27 and the rotating plate I26 rotate to the specified angles, the locking rotating plate II27 and the rotating plate I26 are fixed, and the flow adjusting process is completed.
After the flow regulation process is finished, introducing process gas from a plurality of tangential air inlet channels 43 communicated with external pipelines of a mixing cavity 45 of the air inlet structure 1, wherein three tangential air inlet channels 43 can be formed in the concrete implementation process, and the mixed process gas can be carrier gas hydrogen, silicon source, doping gas and the like; the process gas is uniformly mixed in the mixing cavity 45 of the air inlet structure 1, flows into the diffusion cavity 47 after sequentially passing through the conical flow expansion structure 49 and the flow expansion holes 46, then flows into the flow distribution cavity of the annular flow distribution cavity structure 3 after sequentially passing through the outer flow passage flow adjustment plate 12, the middle flow passage flow adjustment plate 15 and the flow adjustment mother plate 18, and forms uniform vertical airflow to flow to the outside of the annular flow distribution cavity structure 3 after sequentially carrying out two-stage flow distribution through the first-stage flow distribution plate 66 and the second-stage flow distribution plate 67 of the annular flow distribution cavity structure 3, carrying out the silicon epitaxial growth process and forming an epitaxial layer.
And (3) feeding back and adjusting by detecting the thickness uniformity of the epitaxial layer after epitaxial growth, if the thickness uniformity does not reach the expected result, re-performing the flow adjustment process, introducing process gas for re-detection until the detection reaches the expected result, and obtaining the flow ratio after the annular shunt cavity structure 3 is circulated from the inner flow channel 61, the middle flow channel 62 and the outer flow channel 63 at the moment, thereby obtaining more suitable technological parameters of silicon epitaxial growth and performing subsequent silicon epitaxial wafer production.
The foregoing detailed description is provided to illustrate the present invention and not to limit the scope of the invention, i.e., the equivalent changes and modifications within the spirit and scope of the invention and the claims should be considered as falling within the scope of the invention.

Claims (3)

1. The utility model provides a flow adjustable vertical silicon epitaxial reaction chamber air inlet unit which characterized in that: comprises an air inlet structure (1), a supporting ring (2), an annular diversion cavity structure (3) and a flow regulating mechanism (4); the air inlet structure (1) and the supporting ring (2) are arranged in the middle of the flow regulating mechanism (4), and the flow regulating mechanism (4) is arranged on the upper end surface of the annular split-flow cavity structure (3); the air inlet structure (1), the annular shunt cavity structure (3) and the flow regulating mechanism (4) are sequentially communicated; the flow regulating mechanism (4) comprises a rotating seat and a regulating plate layer, and the rotating seat, the air inlet structure (1), the regulating plate layer and the annular flow dividing cavity structure (3) are coaxially connected from top to bottom in sequence; the air inlet structure (1) is connected with the adjusting plate layer through a supporting ring (2);
the rotating seat of the flow regulating mechanism (4) comprises a rotating plate II (27), a rotating plate I (26) and a rotating base (25) which are coaxially and sequentially arranged from top to bottom in a stacking manner; the rotating plate II (27) rotates around the axis of the rotating plate II on the upper end surface of the rotating plate I (26) during rotation; the rotating plate I (26) rotates around the axis of the rotating plate I and rotates on the upper end surface of the rotating base (25) when rotating;
the regulating plate layer of the flow regulating mechanism (4) comprises an outer flow channel flow regulating plate (12), a middle flow channel flow regulating plate (15) and a flow regulating motherboard (18) which are coaxially stacked from top to bottom and are communicated with each other; the outer flow regulating plate (12) comprises two concentric outer flow rings, the two outer flow rings are connected through a plurality of rib plates, and a plurality of outer flow regulating holes (14) are uniformly arranged on one outer flow ring at the outer side of the outer flow regulating plate (12) at intervals along the circumferential direction; the middle runner flow regulating plate (15) comprises two concentric middle runner rings, the two middle runner rings are connected through a plurality of rib plates, and a plurality of middle runner flow regulating holes (17) are uniformly arranged on one middle runner ring on the inner side of the middle runner flow regulating plate (15) at intervals along the circumferential direction; the flow regulating motherboard (18) is in a circular ring shape, a plurality of outer flow channel air inlets (19) are uniformly spaced on the inner side of the annular surface of the flow regulating motherboard (18) along the circumferential direction, and a plurality of middle flow channel air inlets (20) are uniformly spaced on the outer side of the annular surface of the flow regulating motherboard (18) along the circumferential direction;
an annular gap formed between two outer runner rings of the outer runner flow regulating plate (12) is a middle runner communication groove (13), and a central through hole of one outer runner ring at the inner side of the outer runner flow regulating plate (12) is a first inner runner communication hole (11); an annular gap formed between two middle runner rings of the middle runner flow regulating plate (15) is an outer runner communication groove (16), and a central through hole of one middle runner ring at the inner side of the middle runner flow regulating plate (15) is a second inner runner communication hole (22); the central through hole of the flow regulating motherboard (18) is an inner runner air inlet hole (21); the first inner runner communication hole (11), the second inner runner communication hole (22) and the inner runner air inlet hole (21) are communicated in sequence and have the same diameter; the middle runner communication groove (13), each middle runner flow regulating hole (17) and each middle runner air inlet hole (20) are opposite to and communicated with each other from top to bottom in sequence; each outer flow regulating hole (14), each outer flow communicating groove (16) and each outer flow air inlet hole (19) are opposite to and communicated with each other from top to bottom in sequence; each middle runner flow regulating hole (17) is opposite to one middle runner air inlet hole (20); each outer flow regulating hole (14) is opposite to one outer flow air inlet hole (19);
the aperture of the outer flow channel air inlet hole (19) of the flow regulating motherboard (18) is equal to the aperture of the outer flow channel flow regulating hole (14) of the outer flow channel flow regulating plate (12); the aperture of the middle runner air inlet hole (20) of the flow regulating motherboard (18) is equal to the aperture of the middle runner flow regulating hole (17) of the middle runner flow regulating plate (15); the aperture of the outer flow channel air inlet hole (19) of the flow regulating motherboard (18) is smaller than that of the middle flow channel air inlet hole (20);
the ring width of the middle runner communication groove (13) of the outer runner flow regulating plate (12) is equal to the aperture of the middle runner air inlet hole (20) of the flow regulating motherboard (18); the annular width of the outer flow channel communication groove (16) of the middle flow channel flow regulating plate (15) is equal to the aperture of the outer flow channel air inlet hole (19) of the flow regulating motherboard (18); the number of the outer-flow-path air inlet holes (19) of the flow-path motherboard (18) is equal to the number of the outer-flow-path adjusting holes (14) of the outer-path flow-path adjusting plate (12); the number of the middle runner air inlets (20) of the flow regulating motherboard (18) is equal to the number of the middle runner flow regulating holes (17) of the middle runner flow regulating plate (15); the number of the outer flow channel air inlets (19) is larger than that of the middle flow channel air inlets (20);
the center of the outer flow-path flow regulating plate (12) is provided with an upward tubular rotating shaft I (24); the center of the middle runner flow regulating plate (15) is provided with a rotating shaft II (23) upwards; the rotating shaft II (23) penetrates through the center of the rotating shaft I (24) and upwards penetrates through the rotating seat of the flow regulating mechanism (4), and is further fixedly connected to the center of the rotating plate II (27); the rotating shaft I (24) upwards penetrates through a rotating seat of the flow regulating mechanism (4) and is further fixedly connected to the center of the rotating plate I (26); when the rotating plate II (27) rotates, the rotating shaft II (23) and the middle runner flow regulating plate (15) are driven to rotate around the axis of the rotating plate II, so that the communication area between the right opposite middle runner flow regulating hole (17) and the middle runner air inlet hole (20) is changed; when the rotating plate I (26) rotates, the rotating shaft I (24) and the outer flow regulating plate (12) are driven to rotate around the axis of the rotating plate I, so that the communication area between the opposite outer flow regulating hole (14) and the outer flow air inlet hole (19) is changed;
the annular flow distribution cavity structure (3) is disc-shaped, and the upper part of the disc-shaped annular flow distribution cavity structure (3) extends radially and is fixedly connected with the lower end face of the outer edge of the flow regulation motherboard (18); a columnar flow distribution cavity communicated with the annular flow distribution cavity structure (3) is formed in the annular flow distribution cavity structure (3), a first-stage flow distribution plate (66) and a second-stage flow distribution plate (67) which are arranged at intervals from top to bottom are arranged in the flow distribution cavity, and the first-stage flow distribution plate (66) and the second-stage flow distribution plate (67) divide the flow distribution cavity into three layers of cavities which flow mutually from top to bottom; the diameters of the primary flow dividing plate (66) and the secondary flow dividing plate (67) are equal to the inner diameter of the flow dividing cavity; the split flow cavity is internally provided with two cylinders which are arranged at intervals and concentric with the split flow cavity, the two cylinders divide the split flow cavity into three non-communicated interval areas which are radially distributed from the center of a circle, namely a cylindrical central interval area, a circular middle interval area and a circular outer interval area in sequence; the heights of the two cylinders are equal to the height of the diversion cavity; the upper end face of one cylinder close to the center of the flow distribution cavity is positioned at the lower end face of the inner edge of the flow regulation motherboard (18), and the upper end face of one cylinder far away from the center of the flow distribution cavity is positioned at the lower end face of a spacing area between an outer flow channel air inlet hole (19) and a middle flow channel air inlet hole (20) of the flow regulation motherboard (18); the inner runner air inlet holes (21) of the flow regulating motherboard (18) are communicated with the central interval region of the flow dividing cavity, the middle runner air inlet holes (20) of the flow regulating motherboard (18) are communicated with the middle interval region of the flow dividing cavity, and the outer runner air inlet holes (19) of the flow regulating motherboard (18) are communicated with the outer interval region of the flow dividing cavity; introducing gas into an air inlet structure (1) of the air inlet device, and finally flowing out of an annular shunt cavity structure (3) to perform silicon epitaxial growth reaction;
a plurality of first-stage flow-dividing holes (64) are uniformly arranged on the first-stage flow-dividing plate (66) at intervals, and a plurality of second-stage flow-dividing holes (65) are uniformly arranged on the second-stage flow-dividing plate (67) at intervals; the aperture of the first-stage flow-dividing aperture (64) is larger than that of the second-stage flow-dividing aperture (65); the number of primary flow-dividing holes (64) is smaller than the number of secondary flow-dividing holes (65);
the cavity of the central interval area on the upper side of the primary flow dividing plate (66) is an inner flow passage (61), and the inner flow passage (61) is communicated with an inner flow passage air inlet hole (21); the cavity of the middle interval area on the upper side of the primary flow dividing plate (66) is a middle flow channel (62), and the middle flow channel (62) is communicated with each middle flow channel air inlet hole (20); the cavity of the outer interval area on the upper side of the primary flow dividing plate (66) is an outer flow channel (63), and the outer flow channel (63) is communicated with each outer flow channel air inlet hole (19).
2. A flow-adjustable vertical silicon epitaxial reactor air inlet device as defined in claim 1, wherein: the diameters of the outer flow channel flow regulating plate (12) and the middle flow channel flow regulating plate (15) are the same, and the diameter of the flow regulating motherboard (18) is larger than that of the middle flow channel flow regulating plate (15); the inner diameter of the supporting ring (2) is equal to the diameter of the middle runner flow regulating plate (15), and the thickness of the supporting ring (2) is equal to the sum of the thicknesses of the outer runner flow regulating plate (12) and the middle runner flow regulating plate (15); the support ring (2) is sleeved on the outer side surfaces of the outer flow passage flow regulating plate (12) and the middle flow passage flow regulating plate (15), the upper end surface and the lower end surface of the support ring (2) are respectively welded with the air inlet structure (1) and the flow regulating motherboard (18), and the outer flow passage flow regulating plate (12) and the middle flow passage flow regulating plate (15) are sealed between the air inlet structure (1) and the flow regulating motherboard (18).
3. A flow-adjustable vertical silicon epitaxial reactor air inlet device as defined in claim 1, wherein: the air inlet structure (1) is disc-shaped, and the bottom of the disc-shaped air inlet structure (1) extends outwards and radially and is fixedly connected with the upper end surface of the support ring (2); the center of the air inlet structure (1) is provided with an axial communication hole (48), and a mixing cavity (45), a diffusion hole (46) and a diffusion cavity (47) which are sequentially communicated from top to bottom are formed in the air inlet structure (1); the communication hole (48) is not communicated with the mixing cavity (45), and the diffusion cavity (47) penetrates through the air inlet structure (1); the central top surface of the mixing cavity (45) is downwards provided with a conical flow expansion structure (49), and the side wall of the mixing cavity (45) is uniformly provided with a plurality of tangential air inlet channels (43) connected with an external air pipeline at intervals; the expansion hole (46) is a truncated cone-shaped cavity, and the diameter of the top surface of the truncated cone is smaller than that of the mixing cavity (45); the diffusion cavity (47) is a downward horn-shaped cavity, and the diameter of the bottom surface of the diffusion cavity (47) is equal to the diameter of the outer flow passage flow regulating plate (12); the rotating shaft I (24) upwards penetrates through the communication hole (48) of the air inlet structure (1) and then penetrates through the rotating plate I (26) of the rotating seat of the flow regulating mechanism (4).
CN202210530471.8A 2022-05-16 2022-05-16 Flow-adjustable vertical silicon epitaxial reaction chamber air inlet device Active CN114790574B (en)

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