CN113293359A - PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned manner - Google Patents
PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned manner Download PDFInfo
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- CN113293359A CN113293359A CN202010110843.2A CN202010110843A CN113293359A CN 113293359 A CN113293359 A CN 113293359A CN 202010110843 A CN202010110843 A CN 202010110843A CN 113293359 A CN113293359 A CN 113293359A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
Abstract
The invention relates to a PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned manner, which comprises an upper layer gas inlet disc, a middle layer gas homogenizing disc and a lower layer gas homogenizing disc, wherein: the three disks are sequentially overlapped up, middle and down, a convex wall-groove matching connection structure is arranged between the contact surfaces of the upper layer air inlet disk and the lower layer air homogenizing disk, and the contact surfaces of the upper layer air inlet disk and the lower layer air homogenizing disk are matched and fixedly connected with a screw hole through a screw; the three disks are uniformly divided into three circles, namely a central ring, a secondary inner ring and an outer ring, the area formed by the central ring on the three disks in the axial direction is used for central gas homogenizing, the area formed by the inner ring on the three disks in the axial direction last time is used for middle gas homogenizing, the area formed by the outer ring on the three disks in the axial direction is used for edge gas homogenizing, and the central gas homogenizing, the middle gas homogenizing and the edge gas homogenizing are coaxial; the gas homogenizing device is divided into three independent gas inlet areas, namely, central gas homogenizing, middle gas homogenizing and edge gas homogenizing, and a more uniform film is obtained by adjusting the gas inlet amount and the gas inlet proportion of each gas inlet area.
Description
Technical Field
The invention belongs to the technical field of micro-nano processing, and particularly relates to a PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioning manner.
Background
At present, the traditional PECVD gas homogenizing device is divided into two layers for homogenizing gas, a main gas inlet is dispersed to a first-stage gas homogenizing structure, and then the first-stage gas homogenizing structure is dispersed to a second-stage gas homogenizing structure to obtain more uniform gas distribution. However, it is difficult to deposit a film having good uniformity by the above-mentioned conventional gas uniformizing apparatus. Because the plasma generated by the conventional gas uniformizing device is not uniformly distributed, the uniformity of the thin film is directly influenced, for example, the thin film can show that the thickness of the thin film (or thin) deposited at the center of the wafer is thin (or thick) at the edge. The film with better uniformity is deposited by adjusting the process parameters such as cavity pressure, gas flow and/or proportion, the distance between the hot table and the gas homogenizing device, the radio frequency power, the temperature of the hot table and the like. Adjusting film uniformity is a complex and costly menu development process, and the above parameters affecting the film deposition process affect each other, and in addition, there are cases where the process window is limited by the film specifications.
Disclosure of Invention
The invention provides a PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned mode, which is made of aluminum alloy materials. Compared with a partition ceramic heating table, the aluminum alloy gas homogenizing device has the advantages of easiness in processing, high yield, low cost and the like. By adjusting the flow rate and the proportion of the reaction gas in each area, a more uniform film can be obtained.
The technical scheme adopted by the invention for solving the technical problems is as follows: the utility model provides a but even gas device of subregion control inlet flow and proportion, includes the even gas disc of upper air inlet disc, the even gas disc of middle level, the even gas disc of lower floor, wherein:
the three disks are sequentially overlapped up, middle and down, a lug-groove matched connecting structure is arranged between the contact surfaces of the upper layer air inlet disk and the lower layer air homogenizing disk, and the contact surfaces of the upper layer air inlet disk and the lower layer air homogenizing disk are fixedly connected with each other in a matched mode through screws and screw holes;
the three disks are divided into three circles, namely a central ring, a secondary inner ring and an outer ring, the area formed by the central ring on the three disks in the axial direction is used for central gas distribution, the area formed by the inner ring on the three disks in the axial direction last time is used for middle gas distribution, and the area formed by the outer ring on the three disks in the axial direction is used for edge gas distribution;
the circular air inlet hole columns are distributed in the central ring, the secondary inner ring and the outer ring area on the three disks;
the central gas homogenizing, the middle gas homogenizing and the edge gas homogenizing are coaxial.
Preferably, the gas distribution device further comprises a circular ring shallow groove a and a circular ring shallow groove b, wherein the circular ring shallow groove a and the circular ring shallow groove b are both arranged on one surface, close to the middle-layer gas homogenizing disc, of the upper-layer gas inlet disc; the central ring area and the secondary inner ring area on the upper layer air inlet disc are bounded by the circular ring-shaped shallow groove a, and the secondary inner ring area and the outer ring area are bounded by the circular ring-shaped shallow groove b.
Preferably, the diameter of the circular ring shallow groove a is larger than that of the circular ring shallow groove b, and the diameter ranges of the circular ring shallow groove a and the circular ring shallow groove b are both 50-300 mm.
Preferably, the circle center of the central ring area of the upper layer air inlet disc is provided with one circular air inlet hole column, and the secondary inner ring area and the outer ring area are respectively provided with four circular air inlet hole columns.
Preferably, the air distribution device further comprises a circular ring-shaped partition wall a, a circular ring-shaped partition wall b and a side wall a, wherein the circular ring-shaped partition wall a, the circular ring-shaped partition wall b and the side wall a are arranged on one surface, close to the upper layer air inlet disc, of the middle layer air distribution disc, and the side wall a is vertically arranged at the outer circumference of the middle layer air distribution disc; the circular ring-shaped partition wall a and the circular ring-shaped partition wall b are respectively embedded into the circular ring-shaped shallow groove a and the circular ring-shaped shallow groove b.
Preferably, the gas distribution device further comprises a ring-shaped shallow groove c and a ring-shaped shallow groove d, wherein the ring-shaped shallow groove c and the ring-shaped shallow groove d are formed in one surface, close to the lower-layer gas distribution disc, of the middle-layer gas distribution disc, and the ring-shaped partition walls a and the ring-shaped partition walls b are respectively arranged in one-to-one correspondence with the ring-shaped shallow groove c and the ring-shaped shallow groove d; the central ring area and the secondary inner ring area on the middle-layer air-homogenizing disc are bounded by the circular ring-shaped partition wall a and the circular ring-shaped shallow groove c, and the secondary inner ring area and the outer ring area are bounded by the circular ring-shaped partition wall b and the circular ring-shaped shallow groove d.
Preferably, the diameter of the circular ring-shaped partition wall a is smaller than that of the circular ring-shaped partition wall b, the diameter of the side wall a is 210-310 mm, and the diameter of the circular ring-shaped shallow groove c is smaller than that of the circular ring-shaped shallow groove d; the diameter ranges of the circular ring-shaped partition wall a, the circular ring-shaped partition wall b, the circular ring-shaped shallow grooves c and the circular ring-shaped shallow grooves d are all 50-300 mm, and the height ranges are all 18-24 mm.
Preferably, the air refining device further comprises a circular ring-shaped partition wall c, a circular ring-shaped partition wall d and a side wall b, wherein the circular ring-shaped partition wall c, the circular ring-shaped partition wall d and the side wall b are arranged on one surface, close to the middle-layer air refining disc, of the lower-layer air refining disc; the circular ring-shaped partition wall c and the circular ring-shaped partition wall d are respectively embedded into the circular ring-shaped shallow groove c and the circular ring-shaped shallow groove d; the side wall b is vertically arranged at the outer circumference of the lower air-homogenizing disc.
Preferably, the diameter ranges of the circular partition wall c and the circular partition wall d are both 50-300 mm, and the height ranges are both 18-24 mm; the inner diameter of the side wall b is 210.3-310.3 mm.
Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:
the invention provides an adjustable mode for obtaining a more uniform film, and the more uniform film is obtained by adjusting the air inflow and the air intake ratio of each annular area. The gas homogenizing device overcomes the defect that the original PECVD gas homogenizing structure can not control the gas flow and the gas proportion in a partition mode, and provides a more perfect scheme for obtaining a more uniform film.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic structural view of an upper intake disc of the present invention;
FIG. 3 is a bottom view of the upper intake disk of the present invention;
FIG. 4 is a schematic structural view of a middle gas distribution disk of the present invention;
FIG. 5 is a bottom view of the middle gas distribution disk of the present invention;
FIG. 6 is a schematic structural view of the lower gas distribution disk of the present invention.
In the figure: 10. an upper layer air inlet disc; 11. a circular shallow groove a; 12. a circular shallow groove b; 20. a middle air-homogenizing disc; 21. a circular ring-shaped partition wall a; 22. a circular ring-shaped partition wall b; 23. a side wall a; 24. a circular shallow groove c; 25. a circular shallow groove d; 30. a lower air-homogenizing disc; 31. a circular ring-shaped partition wall c; 32. a circular ring-shaped partition wall d; 33. a side wall b; 40. circular inlet hole post.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.
The invention belongs to the technical field of micro-nano processing, and relates to a film deposition process. The PECVD method comprises two substrates of a capacitor consisting of a gas homogenizing device and a hot stage, wherein the gas homogenizing device is connected with a radio frequency source, the hot stage is grounded with the inner wall of a cavity, and a plasma field is formed between the gas homogenizing device and the hot stage. In order to obtain a uniform film, the film with good uniformity can be obtained through adjusting process parameters such as the pressure of a valence cavity, the flow and the proportion of gas, the distance between a hot table and a gas homogenizing device, the power, the temperature of the hot table and the like, the uniformity adjustment is a complex process, the parameters of the film are mutually influenced, in addition, the adjustable process parameter range is limited, and the difficulty is brought to obtaining the uniform film.
Therefore, the invention provides a gas homogenizing device capable of controlling the gas inlet flow and proportion in a partitioning manner, and a uniform film can be obtained by adjusting the flow and proportion of the reaction gas in each area. The following provides the best embodiments of the invention, specifically as follows:
example 1
As shown in figure 1, the invention consists of three parts, namely an upper layer air inlet disc 10, a middle layer air distribution disc 20 and a lower layer air distribution disc 30, wherein the three discs are sequentially overlapped up, middle and down.
The three disks are divided into three circles, namely a central ring, a secondary inner ring and an outer ring, the area formed by the central ring on the three disks in the axial direction is central air-homogenizing, the area formed by the inner ring on the three disks in the axial direction last time is middle air-homogenizing, and the area formed by the outer ring on the three disks in the axial direction is edge air-homogenizing; the central gas homogenizing, the middle gas homogenizing and the edge gas homogenizing are coaxial. The gas homogenizing device is divided into three independent gas inlet areas, namely, central gas homogenizing, middle gas homogenizing and edge gas homogenizing, and a more uniform film is obtained by adjusting the gas inlet amount and the gas inlet proportion of each gas inlet area.
As shown in fig. 2 and 3, fig. 2 is a schematic structural diagram of the upper layer intake disc 10, and fig. 3 is a bottom view of the upper layer intake disc 10. In the figure, it can be seen that the outer circumference of the lower surface of the upper layer air intake disc 10 is a groove, that is, the lower surface of the upper layer air intake disc 10 is convex at the position of the outer circumference, and the convex outer circumference is the boundary of the upper outer ring of the upper layer air intake disc 10.
The lower surface of the upper layer air inlet disc 10 is provided with a circular ring shallow groove a11 and a circular ring shallow groove b12, the circular ring shallow groove a11 is arranged between the central ring area and the secondary inner ring area on the upper layer air inlet disc 10, and the circular ring shallow groove b12 is arranged between the secondary inner ring area and the outer ring area. The upper layer air inlet disc 10 is further provided with a plurality of circular air inlet hole columns 40, one circular air inlet hole column 40 is arranged at the center of the center ring area of the upper layer air inlet disc 10, and four circular air inlet hole columns 40 are respectively arranged in the secondary inner ring area and the outer ring area. The four circular inlet holes 40 in the secondary inner ring area and the four circular inlet holes 40 in the outer ring area are distributed at every 90 degrees. Namely, the upper layer air inlet disc 10 is provided with 9 circular air inlet hole columns 40, the circular air inlet hole columns 40 at the circle center of the inner ring area are taken as intersection points, and the rest eight circular air inlet hole columns 40 are distributed in a cross shape. The diameters of the circular ring shallow groove a11 and the circular ring shallow groove b12 are 100mm and 200mm respectively, the depth is 3mm, and the width is 2 mm.
As shown in fig. 4 and 5, fig. 4 is a schematic structural view of the middle gas distribution disk 20, and fig. 5 is a bottom view of the middle gas distribution disk 20. The middle gas-homogenizing disc 20 has a plurality of circular gas-dispersing holes 40 distributed uniformly in three circle regions, namely, a central ring, a secondary inner ring and an outer ring. The gas dispersing holes 40 formed in the upper surface of the middle gas homogenizing disc 20 are used for dispersing gas introduced into the circular gas inlet hole columns 40 on the upper gas inlet disc 10, wherein the diameter of the circular gas dispersing holes 40 on the middle gas homogenizing disc 20 is 1.8mm, and the number of the circular gas dispersing holes 40 is 378. The upper surface of the middle air homogenizing disc 20 is provided with a circular ring-shaped partition wall a21, a circular ring-shaped partition wall b22 and a side wall a 23. The circular ring-shaped partition wall a21 corresponds to the circular ring-shaped shallow groove a11 on the lower surface of the upper layer air inlet disc 10 and can be embedded into the circular ring-shaped shallow groove a11 in a clamping manner; the circular ring-shaped partition wall b22 corresponds to the circular ring-shaped shallow groove b12 on the lower surface of the upper layer air inlet disc 10 and can be embedded into the circular ring-shaped shallow groove b12 in a clamping manner. The side wall a23 is vertically arranged at the outer circumference of the middle air distribution disc 20, and the diameter of the middle air distribution disc 20, namely the diameter of the side wall a23, is consistent with the diameter of the protrusion at the outer circumference of the lower surface of the upper air inlet disc 10. The diameters of the circular partition wall a21 and the circular partition wall b22 are 100mm and 200mm respectively, the height is 21.4mm, and the thickness is 1.97 mm; the side wall a23 is 310mm in diameter, 20mm in height and 2.5mm in thickness. The lower surface of the middle-layer air-homogenizing disc 20 is provided with a circular ring-shaped shallow groove c24 and a circular ring-shaped shallow groove d25 at positions corresponding to the circular ring-shaped partition wall a21 and the circular ring-shaped partition wall b22 respectively, the diameters of the circular ring-shaped shallow groove c24 and the circular ring-shaped shallow groove d25 are 100mm and 200mm respectively, the depths are 3mm, and the widths are 2mm respectively.
As shown in fig. 6, fig. 6 is a structural schematic view of the lower air distribution disc 30. And a plurality of gas dispersing holes 40 are uniformly distributed in three circle areas of a central ring, a secondary inner ring and an outer ring of the lower gas homogenizing disc 30. The lower surface of the lower air homogenizing disc 30 is a smooth flat plate. The upper surface of the lower air homogenizing disc 30 is provided with a circular ring-shaped partition wall c31, a circular ring-shaped partition wall d32 and a side wall b 33. The circular ring-shaped partition wall c31 corresponds to the circular ring-shaped shallow groove c24 on the lower surface of the middle-layer air homogenizing disc 20 and can be embedded into the circular ring-shaped shallow groove c24 in a clamping manner; the circular ring-shaped partition wall d32 corresponds to the circular ring-shaped shallow groove d25 on the lower surface of the middle-layer air-homogenizing disc 20 and can be embedded in the circular ring-shaped shallow groove d25 in a clamping manner. The side wall b33 is vertically arranged at the outer circumference of the lower air distribution disc 30, and the diameter of the lower air distribution disc 30 is consistent with that of the upper air inlet disc 10. The diameters of the circular partition wall c31 and the circular partition wall d32 are 100mm and 200mm respectively, the height is 21.4mm, and the thickness is 1.97 mm; the diameter of the side wall b33 is 310.3mm, and the height is 45 mm.
As shown in fig. 1, a convex-concave matching connection structure is provided between the contact surfaces of the upper layer air inlet disc 10 and the lower layer air distribution disc 30, the convex refers to the side wall b33 on the lower layer air distribution disc 30, and the concave refers to the concave at the outer circumference of the lower surface of the upper layer air inlet disc 10; meanwhile, the contact surfaces of the upper layer air inlet disc 10 and the lower layer air homogenizing disc 30 are fixedly connected through screws and screw holes in a matched mode.
The gas homogenizing device is divided into three independent gas inlet areas, namely, central gas homogenizing, middle gas homogenizing and edge gas homogenizing, and a more uniform film is obtained by adjusting the gas inlet amount and the gas inlet proportion of each gas inlet area. The central gas homogenizing is a region axially formed by central rings on the three disks, namely a closed cylindrical region formed by the annular partition wall a21 between the upper layer gas inlet disk 10 and the middle layer gas homogenizing disk 20, a closed cylindrical region formed by the annular partition wall c31 between the middle layer gas homogenizing disk 20 and the lower layer gas homogenizing disk 30, and a set of the two regions; the middle gas homogenizing is a region formed by three discs in the previous inner ring axial direction, namely a closed annular region formed by the annular partition wall a21 and the annular partition wall b22 between the upper layer gas inlet disc 10 and the middle layer gas homogenizing disc 20, and a closed annular region formed by the annular partition wall c31 and the annular partition wall d32 between the middle layer gas homogenizing disc 20 and the lower layer gas homogenizing disc 30, and the two regions are integrated; the edge air distribution is a region formed by the three upper and outer rings of the disks in the axial direction, namely a closed annular region formed by the annular partition wall b22 and the side wall a23 between the upper layer air inlet disk 10 and the middle layer air distribution disk 20, and a closed annular region formed by the annular partition wall d32 and the side wall b33 between the middle layer air distribution disk 20 and the lower layer air distribution disk 30, and a set of the two regions.
In order to obtain a more uniform film, the invention provides a novel PECVD gas homogenizing device capable of adjusting gas distribution. The air homogenizing device is divided into two layers, each layer is divided into three circles of a central ring, a secondary inner ring and an outer ring for independent air intake, and air intake areas formed by the three layers of the central ring, the secondary inner ring and the outer ring are respectively central air homogenizing, middle air homogenizing and edge air homogenizing. The reaction gas is introduced into the upper surface of the upper layer gas inlet disc 10, and is divided into central gas homogenizing, middle gas homogenizing and edge gas homogenizing through the circular gas inlet hole columns 40 in three circle areas of the central ring, the secondary inner ring and the outer ring on the upper layer gas inlet disc 10; then the reaction gas in each area is uniformly distributed through the gas dispersion holes 40 in the three circle areas of the central ring, the secondary inner ring and the outer ring on the middle-layer gas-homogenizing disc 20 and passes through the lower-layer gas-homogenizing disc 30; then, the gas distributing holes 40 in the three-circle areas of the central ring, the secondary inner ring and the outer ring on the lower gas homogenizing disc 30 uniformly distribute the reaction gas again, and thus, a uniform film can be formed on the wafer below.
The invention can adjust the air input and air input proportion of each annular area to obtain more uniform film. The gas homogenizing device overcomes the defect that the original PECVD gas homogenizing structure can not control the gas flow and the gas proportion in a partition mode, and provides a more perfect scheme for obtaining a more uniform film.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The meaning of "and/or" as used herein is intended to include both the individual components or both.
The term "connected" as used herein may mean either a direct connection between components or an indirect connection between components via other components.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (9)
1. A PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned manner is characterized in that: including upper air inlet disc (10), the even gas disc of middle level (20), even gas disc of lower floor (30), wherein:
the three disks are sequentially overlapped up, middle and down, a lug-groove matched connecting structure is arranged between the contact surfaces of the upper layer air inlet disk (10) and the lower layer air homogenizing disk (30), and meanwhile, the contact surfaces of the upper layer air inlet disk (10) and the lower layer air homogenizing disk (30) are fixedly connected in a matched mode through screws and screw holes;
the three disks are divided into a central ring, a secondary inner ring and an outer ring for three circles of air homogenization, the area formed by the central ring on the three disks in the axial direction is central air homogenization, the area formed by the inner ring on the three disks in the axial direction last time is middle air homogenization, and the area formed by the outer ring on the three disks in the axial direction is edge air homogenization;
the air supply device also comprises a plurality of circular air inlet hole columns (40), wherein the circular air inlet hole columns (40) are used for supplying air to the central ring, the secondary inner ring and the outer ring areas of the three disks;
the central gas homogenizing, the middle gas homogenizing and the edge gas homogenizing are coaxial.
2. A PECVD homogenizing device according to claim 1, with zoned control of inlet gas flow and ratio, characterized by: the gas-distributing disc also comprises a circular ring shallow groove a (11) and a circular ring shallow groove b (12), wherein the circular ring shallow groove a (11) and the circular ring shallow groove b (12) are both arranged on one surface, close to the middle-layer gas-distributing disc (20), of the upper-layer gas inlet disc (10); the central ring area and the secondary inner ring area on the upper layer air inlet disc (10) are bounded by the circular ring-shaped shallow groove a (11), and the secondary inner ring area and the outer ring area are bounded by the circular ring-shaped shallow groove b (12).
3. The gas homogenizing device according to claim 2, wherein the gas homogenizing device comprises: the diameter of the circular ring shallow groove a (11) is larger than that of the circular ring shallow groove b (12), the diameter ranges of the circular ring shallow groove a (11) and the circular ring shallow groove b (12) are both 50-300 mm, the depth is 3mm, and the width is 2 mm.
4. A PECVD homogenizing device according to claim 1, with zoned control of inlet gas flow and ratio, characterized by: the circle center of the central ring area of the upper layer air inlet disc (10) is provided with one circular air inlet hole column (40), and the secondary inner ring area and the outer ring area are respectively provided with four circular air inlet hole columns (40).
5. A PECVD homogenizing device according to claim 2, with zoned control of inlet gas flow and ratio, characterized by: the air distribution device is characterized by further comprising a circular ring-shaped partition wall a (21), a circular ring-shaped partition wall b (22) and a side wall a (23), wherein the circular ring-shaped partition wall a (21), the circular ring-shaped partition wall b (22) and the side wall a (23) are arranged on one surface, close to the upper-layer air inlet disc (10), of the middle-layer air distribution disc (20), and the side wall a (23) is vertically arranged at the outer circumference of the middle-layer air distribution disc (20); the circular ring-shaped partition wall a (21) and the circular ring-shaped partition wall b (22) are respectively embedded into the circular ring-shaped shallow grooves a (11) and the circular ring-shaped shallow grooves b (12).
6. A PECVD gas uniformizing apparatus capable of controlling inlet gas flow and ratio in a partitioned manner as claimed in claim 5, wherein: the gas distribution device is characterized by further comprising a circular ring shallow groove c (24) and a circular ring shallow groove d (25), wherein the circular ring shallow groove c (24) and the circular ring shallow groove d (25) are formed in one surface, close to the lower-layer gas distribution disc (30), of the middle-layer gas distribution disc (20), and the circular ring partition walls a (21) and the circular ring partition walls b (22) are respectively arranged in one-to-one correspondence with the circular ring shallow grooves c (24) and the circular ring shallow grooves d (25); the central ring area and the secondary inner ring area on the middle-layer air-homogenizing disc (20) are bounded by the circular ring-shaped partition wall a (21) and the circular ring-shaped shallow groove c (24), and the secondary inner ring area and the outer ring area are bounded by the circular ring-shaped partition wall b (22) and the circular ring-shaped shallow groove d (25).
7. The gas homogenizing device according to claim 6, wherein the gas homogenizing device comprises: the diameter of the circular ring-shaped partition wall a (21) is smaller than that of the circular ring-shaped partition wall b (22), the outer diameter of the side wall a (23) is 210-310 mm, and the diameter of the circular ring-shaped shallow groove c (24) is smaller than that of the circular ring-shaped shallow groove d (25); the diameter ranges of the circular ring-shaped partition wall a (21), the circular ring-shaped partition wall b (22), the circular ring-shaped shallow grooves c (24) and the circular ring-shaped shallow grooves d (25) are all 50-300 mm, and the height ranges are all 18-24 mm.
8. The gas homogenizing device according to claim 6, wherein the gas homogenizing device comprises: the air distribution device is characterized by further comprising a circular ring-shaped partition wall c (31), a circular ring-shaped partition wall d (32) and a side wall b (33), wherein the circular ring-shaped partition wall c (31), the circular ring-shaped partition wall d (32) and the side wall b (33) are arranged on one surface, close to the middle air distribution disc (20), of the lower air distribution disc (30); the circular ring-shaped partition wall c (31) and the circular ring-shaped partition wall d (32) are respectively embedded into the circular ring-shaped shallow groove c (24) and the circular ring-shaped shallow groove d (25); the side wall b (33) is vertically arranged at the outer circumference of the lower air-homogenizing disc (30).
9. The apparatus of claim 8, wherein the apparatus further comprises a flow control valve for controlling the flow and ratio of the inlet air: the diameter ranges of the circular partition wall c (31) and the circular partition wall d (32) are both 50-300 mm, and the height ranges are both 18-24 mm; the inner diameter of the side wall b (33) is 210.3-310.3 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010110843.2A CN113293359A (en) | 2020-02-24 | 2020-02-24 | PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned manner |
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| CN202010110843.2A CN113293359A (en) | 2020-02-24 | 2020-02-24 | PECVD gas homogenizing device capable of controlling gas inflow and proportion in a partitioned manner |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114790574A (en) * | 2022-05-16 | 2022-07-26 | 浙江大学 | Vertical silicon epitaxial reaction chamber air inlet device with adjustable flow |
| CN117059529A (en) * | 2023-10-11 | 2023-11-14 | 江苏邑文微电子科技有限公司 | Gas homogenizing device and semiconductor etching equipment |
| CN117059529B (en) * | 2023-10-11 | 2023-12-19 | 江苏邑文微电子科技有限公司 | Gas homogenizing device and semiconductor etching equipment |
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