CN103160813B - A kind of reaction chamber and apply the plasma processing device of this reaction chamber - Google Patents
A kind of reaction chamber and apply the plasma processing device of this reaction chamber Download PDFInfo
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- CN103160813B CN103160813B CN201110424577.1A CN201110424577A CN103160813B CN 103160813 B CN103160813 B CN 103160813B CN 201110424577 A CN201110424577 A CN 201110424577A CN 103160813 B CN103160813 B CN 103160813B
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Abstract
A kind of reaction chamber and apply the plasma processing device of this reaction chamber, comprise outer chamber, inner cavity chamber and air shooter, described inner cavity chamber is arranged in described outer chamber, gas passage is formed between described inner cavity chamber and described outer chamber, described gas passage is communicated with the exhaust-duct of outer chamber, described air shooter is arranged in described inner cavity chamber, described air shooter is provided with the inlet mouth to described inner cavity chamber delivery technology gas, the locular wall of described inner cavity chamber is provided with venting port, wherein, the venting port regulon for regulating described venting port size is provided with at described vent position, thus the temperature distribution of inner cavity chamber can be regulated, and then the adjustability of plasma processing device can be improved.
Description
Technical field
The present invention relates to microelectronic processing technique field, particularly, relate to a kind of reaction chamber and apply the plasma processing device of this reaction chamber.
Background technology
Metal organic chemical vapor deposition (Metal Organic Chemical VaporDeposition, hereinafter referred to as MOCVD) technology makes organic metal raw material gas, hydrogenated gas or halogenation gas thermolysis and the technology obtaining film is easily controlled because it has film coating composition, plated film even compact and the advantage such as sticking power is excellent and be widely used in preparing various film
Fig. 1 is the structure diagram of existing a kind of MOCVD device.Refer to Fig. 1, MOCVD device comprises reaction chamber 1, reaction chamber 1 comprises outer chamber 10 and is arranged on the inner cavity chamber 11 of outer chamber 10 inside, the external diameter of inner cavity chamber 11 is less than the internal diameter of outer chamber 10, thus formed between outer chamber 10 and inner cavity chamber 11 can the gas passage 13 that flows of supplied gas, gas passage 13 is communicated with the exhaust-duct 14 be positioned at bottom outer chamber 10.Top for the induction trunk 16 autoreaction chamber 1 of delivery technology gas is stretched in inner cavity chamber 11, and the multiple pallets 15 be provided with on induction trunk 16 for the workpieces to be machined such as carrying substrates 18, multiple pallet 15 along induction trunk 16 length direction interval arrange and vertical with induction trunk 16.Intake ducting 16 is provided with inlet mouth 17 near the position of the upper surface of pallet 15, and process gas is entered in inner cavity chamber 11 by inlet mouth 17.The locular wall of inner cavity chamber 11 is provided with multiple venting port 12, participates in reacted process gas and discharge inner cavity chamber 11 from venting port 12, then converge to exhaust-duct 14 by gas passage 13 and discharge.
In actual use, because the size of venting hole 12 is fixed, cannot regulate by the temperature of venting hole 12 pairs of workpieces to be machined 18, this makes the adjustability of existing MOCVD device to processing parameter poor.
Summary of the invention
For solving the problem, the invention provides a kind of reaction chamber and apply the plasma processing device of this reaction chamber, the size of its venting port can regulate, thus can assist the temperature distribution regulating inner cavity chamber, and then can improve the adjustability of plasma processing device.
A kind of reaction chamber is provided for realizing object of the present invention, comprise outer chamber, inner cavity chamber and air shooter, described inner cavity chamber is arranged in described outer chamber, and gas passage is formed between described inner cavity chamber and described outer chamber, described gas passage is communicated with the exhaust-duct of outer chamber, described air shooter is arranged in described inner cavity chamber, described air shooter is provided with the inlet mouth to described inner cavity chamber delivery technology gas, the locular wall of described inner cavity chamber is provided with venting port, wherein, the venting port regulon for regulating described venting port size is provided with at described vent position.
Wherein, described venting port regulon comprises shutter and drive unit, the locular wall that described shutter is close to described inner cavity chamber arranges and is positioned at described vent position, and described drive unit drives described shutter to move, with the size regulating described shutter to block described venting port.
Wherein, described inner cavity chamber is columnar structured, and described shutter is annulus, and described drive unit is linear electric motors, and described linear electric motors drive described shutter to move on the axial direction due of described inner cavity chamber.
Wherein, described inner cavity chamber is columnar structured, described shutter is annulus, described shutter is provided with the through hole measure-alike with described venting port, described drive unit is rotating machine, described rotating machine drives described shutter around the center rotating of described inner cavity chamber, thus regulates the overlap ratio of described through hole and described venting port.
Wherein, the axial direction due of described inner cavity chamber is provided with the described venting port of many rows, and the quantity of shutter is corresponding with the row of described venting port, multiple described shutter is linked together by web plate, and described drive unit drives described multiple shutter to move.
Wherein, the thickness of described shutter is 1 ~ 2mm.
Wherein, multiple pallet for carrying workpiece to be machined is provided with in described inner cavity chamber, multiple described pallet the length direction interval of described air shooter arrange and vertical with described air shooter, described air shooter is provided with the inlet mouth corresponding with described tray number, the locular wall of described inner cavity chamber is provided with the venting port corresponding with described tray number.
Preferably, on the axial direction due of described inner cavity chamber, described inlet mouth is higher than the upper surface of described pallet, and described venting port is lower than the lower surface of described pallet.
Wherein, be provided with the ruhmkorff coil for heating described outer chamber inside in the outside of described outer chamber, described ruhmkorff coil is connected with AC power.
The present invention also provides a kind of plasma processing device, it comprises reaction chamber, central air induction system and exhaust system, wherein, described reaction chamber have employed above-mentioned reaction chamber provided by the invention, described central air induction system is connected with described air shooter, and described exhaust system is connected with the venting port of described outer chamber.
The present invention has following beneficial effect:
Reaction chamber provided by the invention, it is by arranging venting port regulon in the position of the venting port being close to inner cavity chamber, the size of venting port can be regulated, thus have adjusted the thermal losses speed of reaction chamber, and then change the temperature distribution of reaction chamber, this achieve plasma processing device by the regulative mode regulating the size of venting port to assist the temperature distribution regulated in reaction chamber, and then improve the adjustability of plasma processing device.
Plasma processing device provided by the invention, it is by adopting reaction chamber provided by the invention, by the regulative mode regulating the size of venting port to assist the temperature distribution regulated in reaction chamber, and then the adjustability of plasma processing device can be improve.
Accompanying drawing explanation
Fig. 1 is the structure diagram of the reaction chamber of existing a kind of MOCVD device;
Fig. 2 a is the structure diagram of reaction chamber provided by the invention;
Fig. 2 b is the schematic diagram of first embodiment of the invention shutter;
Fig. 2 c is the connection diagram of the multiple shutter of the present invention;
Fig. 2 d is that exhaust ports is in the partial schematic diagram of full-gear;
Fig. 2 e is that exhaust ports is in the partial schematic diagram of closing condition;
Fig. 3 a is the schematic diagram of second embodiment of the invention shutter; And
Fig. 3 b is the schematic diagram of the multiple shutter of second embodiment of the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, reaction chamber provided by the invention and plasma processing device are illustrated in detail.
Embodiment one
Fig. 2 a is the structure diagram of reaction chamber provided by the invention.Refer to Fig. 2 a, reaction chamber 2 comprises columnar structured outer chamber 20 and inner cavity chamber 21 and air shooter 28, wherein, is provided with ruhmkorff coil 29 in the outside of outer chamber 20, it is connected with AC power (not shown), in order to heat the inside of outer chamber 20; Inner cavity chamber 21 is arranged in outer chamber 20, thus be formed between inner cavity chamber 21 and outer chamber 20 can supplied gas flowing gas passage 23, gas passage 23 is communicated with the exhaust-duct 201 be arranged at bottom outer chamber 20, converges to exhaust-duct 201 discharge in order to make the gas in gas passage 23; Three row's venting ports 211 are provided with on the locular wall of inner cavity chamber 21 and along the axial direction due of inner cavity chamber 21, and each row's venting port 211 being circumferentially uniformly distributed in inner cavity chamber 21, so that the gas uniform of inner cavity chamber 21 is discharged; The top of air shooter 28 autoreaction chamber 2 stretches in inner cavity chamber 21 along the axis direction of inner cavity chamber 21, and air shooter 28 is arranged at intervals with three layers of inlet mouth 281 along its length, for delivery technology gas in inner cavity chamber 21; Further, three pallets, 27, three pallets 27 being also provided with to carry workpiece to be machined 26 in inner cavity chamber 21 are disposed on air shooter 28 along the length direction of air shooter 28, and vertical with air shooter 28.Further, the number of plies being arranged on the inlet mouth 281 on air shooter 28 and the row being arranged on the venting port 211 on the locular wall of inner cavity chamber 21 all corresponding with the quantity of pallet 27.As a preferred version of the present embodiment, the position of inlet mouth 281 on air shooter 28 is near the upper surface of corresponding pallet 27, and the position of venting port 211 on the locular wall of inner cavity chamber 21 is near the lower surface of corresponding pallet 27.By inlet mouth 281 being arranged on the position of the upper surface near corresponding pallet 27, process gas can be made to spread along the upper surface of pallet 27 to the surrounding of inner cavity chamber 21, thus add the density of the process gas participating in reaction, and then improve the utilization ratio of process gas, shorten the process time, improve process efficiency; By venting port 211 being arranged on the lower surface near corresponding pallet 27, can preventing unreacted process gas from directly discharging inner cavity chamber 21 from venting port 211, thus decreasing the waste of process gas, and then reducing production cost.
It should be noted that, be not limited thereto in actual applications, as long as inlet mouth 281 on the axial direction due of inner cavity chamber 21 higher than the upper surface of corresponding pallet 27, and venting port 211 on the axial direction due of inner cavity chamber 21 lower than the lower surface of pallet 27, all can realize object of the present invention.
Also it should be noted that, in the present embodiment, in inner cavity chamber 21, be provided with three pallets 27 along the axial direction due of inner cavity chamber 21.But the quantity of pallet 27 is not limited thereto in actual applications, the quantity of pallet 27 can also be one, more than two and four, and is arranged on the number of plies of the inlet mouth 281 on air shooter 28 and to be arranged on the row of the venting port 211 on the locular wall of inner cavity chamber 21 all corresponding with the quantity of pallet 27.
Fig. 2 b is the schematic diagram of first embodiment of the invention shutter.Fig. 2 c is the connection diagram of the multiple shutter of the present invention.See also Fig. 2 b and Fig. 2 c, in the present embodiment, reaction chamber 2 also comprises the venting port regulon of the size for regulating venting port 211, venting port regulon comprises shutter 24 and the drive unit (not shown) in order to drive shutter 24 to move, wherein, shutter 24 is an annulus, and its thickness is 1 ~ 2mm, and the height of shutter 24 is not less than the size of venting port 211, thus make shutter 24 can block venting port 211 completely.
In the present embodiment, the locular wall of inner cavity chamber 21 is provided with three row's venting ports 211 along its axial direction due, corresponding, three shutters 24 are provided with along the axially spaced-apart of inner cavity chamber 21 in inner cavity chamber 21, and, between adjacent two shutters 24, be also provided with multiple web plate 25, in order to be linked together by three shutters 24, thus make the action simultaneously of three shutters 24.As shown in Figure 2 a, the locular wall that each shutter 24 is close to inner cavity chamber 21 arranges and is positioned at the position of corresponding venting port 211, and the spacing that the spacing and adjacent two between adjacent two shutters 24 arranges venting port 211 is equal, thus can regulate the size of venting port 211 equably.Be appreciated that the quantity of shutter 24 object that can realize regulate venting port size equal to the row of the venting port 211 be arranged in inner cavity chamber 21.
In the present embodiment, drive unit is linear electric motors, does straight line up-and-down movement in order to drive three shutters 24 along the axis of inner cavity chamber 21 simultaneously.During use, linear electric motors drive shutter 24 to move along the axis direction of inner cavity chamber 21 is upper and lower.The partial schematic diagram that Fig. 2 d is venting port when being maximum.Fig. 2 e partial schematic diagram that to be venting port be when closing.See also Fig. 2 d and Fig. 2 e, when the lower end of shutter 24 is higher than venting port 211, venting port 211 is maximum, and now the heat that outwards sheds from venting port 211 of inner cavity chamber 21 is maximum, thus the thermal losses speed of reaction chamber 2 is maximum; In the process that shutter 24 declines, venting port 211 reduces gradually, and the heat that inner cavity chamber 21 outwards sheds from venting port 211 reduces gradually, thus the thermal losses speed of reaction chamber 2 reduces gradually; When shutter 24 drops to its lower end lower than venting port 211, venting port 211 is closed, and now the heat that outwards sheds from venting port 211 of inner cavity chamber 21 is minimum, thus the thermal losses speed of reaction chamber 2 is minimum.Upper and lower motion by shutter 24 regulates the size of venting port 211, can regulate the thermal losses speed of reaction chamber 2, thus have adjusted the temperature distribution in reaction chamber 2, and then improve the adjustability of plasma processing device.
It should be noted that, in the present embodiment, the row of venting port 211 is three rows, and the quantity of shutter 24 is three.But the present invention is not limited thereto, the row of venting port 211 can be any amount, corresponding, the quantity of shutter 24 is equal with the row of venting port 211.
Also it should be noted that, in the present embodiment, the spacing that the spacing and adjacent two between two adjacent shutters 24 arranges venting port 211 is identical.But be not limited thereto in actual applications, the spacing of two adjacent shutters 24 also can be different, can regulate venting hole 211 size equally, thus reach the object of the temperature distribution on the axial direction due regulating inner cavity chamber 21 by shutter 24.
In the present embodiment, the height of shutter 24 is not less than the size of venting port 211, but is not limited thereto in actual applications, and the height of shutter 24 also can be less than the size of venting port 211.In other words, the present embodiment limits, as long as can reach the object regulating venting port 211 size the height of shutter 24 is not special.
It should be noted that, in the present embodiment, linear electric motors drive the action simultaneously of three shutters 24 by web plate 25.But in actual applications, can also be that three shutters 24 arrange separately three linear electric motors, separately to drive three upper and lower motions of shutter 24, namely independently the size of three row's venting ports is regulated, thus regulate the temperature distribution on the axial direction due of inner cavity chamber 21.
Also it should be noted that, in the present embodiment, outer chamber 20 and inner cavity chamber 21 are columnar structured, corresponding, shutter 24 is annulus, but is not limited thereto in actual applications, and the structure of outer chamber 20 and inner cavity chamber 21 can also be other ring structure such as square, polygonal casing, and the structure of shutter 24 is corresponding with the structure of outer chamber 20 and inner cavity chamber 21, and the locular wall being close to inner cavity chamber 21 is arranged.
Embodiment two
Fig. 3 a is the schematic diagram of second embodiment of the invention shutter.Refer to Fig. 3 a, in the present embodiment, shutter 24 for being close to the annulus of the locular wall of columnar inner cavity chamber 21, and is provided with the through hole 241 identical with the size of venting port 211.Drive unit is rotating machine, rotates around the axis of inner cavity chamber 21 in order to drive shutter 24.During use, shutter 24 carries out clockwise or rotates counterclockwise under the drive of rotating machine.When through hole 241 overlaps completely with venting port 211, venting port 211 is maximum, and now the heat that outwards sheds from venting port 211 of inner cavity chamber 21 is maximum, thus the thermal losses speed of reaction chamber 2 is maximum; In the process that through hole 241 and venting port 211 are interlaced, through hole 241 reduces gradually with the overlap ratio of venting port 211, and the heat that inner cavity chamber 21 outwards sheds from venting port 211 reduces gradually, thus the thermal losses speed of reaction chamber 2 reduces gradually; When through hole 241 staggers completely with venting port 211, venting port 211 is closed, and now the heat that outwards sheds from venting port 211 of inner cavity chamber 21 is minimum, and the thermal losses speed of reaction chamber 2 is minimum.Like this, rotation by shutter 24 regulates the size of venting port 211, the thermal losses speed of reaction chamber 2 can be regulated, thus the temperature distribution that have adjusted in reaction chamber 2, this achieve plasma processing device by regulating the size of venting port to regulate the temperature distribution in reaction chamber, thus improve the adjustability of plasma processing device.In addition, the further feature of the second embodiment is identical with the first embodiment, repeats no more here.
It should be noted that, shutter 24 can be all-in-one-piece annulus, and the quantity of through hole 241 is corresponding with the quantity of venting port 211; Shutter 24 can also be the multiple shutters 24 arranged along the axially spaced-apart of inner cavity chamber 21, as shown in Figure 3 b.Multiple shutter 24 can be linked together by web plate 25, thus make the action simultaneously of multiple shutter 24, also rotating machine can be set respectively, thus drive each shutter 24 independently, and then the temperature distribution on the axis direction of inner cavity chamber 21 can be regulated.Further, the quantity of shutter 24 is corresponding with the row of venting port 211, and the quantity of through hole 241 on each shutter 24 is corresponding with the quantity of often arranging venting port 211.
In sum, the above-mentioned reaction chamber that the present embodiment provides, it arranges venting port regulon by the position of the venting port at inner cavity chamber's inner close fitting locular wall, the size of venting port can be regulated, thus the thermal losses speed of reaction chamber can be regulated, and then have adjusted the temperature distribution of reaction chamber, this achieve plasma processing device by the mode regulating the size of venting port to assist the temperature distribution regulated in reaction chamber, and then improve the adjustability of plasma processing device.
The present invention also provides a kind of plasma processing device, and it comprises reaction chamber, central air induction system and exhaust system, and wherein, central air induction system is connected with air shooter; Exhaust system is connected with the exhaust-duct of outer chamber; Reaction chamber have employed the above-mentioned reaction chamber that the present embodiment provides.
Plasma processing device provided by the invention, it is by adopting reaction chamber provided by the invention, by the mode regulating the size of venting port to assist the temperature distribution regulated in reaction chamber, and then can improve the adjustability of plasma processing device.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (8)
1. a reaction chamber, comprise outer chamber, inner cavity chamber and air shooter, described inner cavity chamber is arranged in described outer chamber, and gas passage is formed between described inner cavity chamber and described outer chamber, described gas passage is communicated with the exhaust-duct of outer chamber, described air shooter is arranged in described inner cavity chamber, described air shooter is provided with the inlet mouth to described inner cavity chamber delivery technology gas, the locular wall of described inner cavity chamber is provided with venting port, it is characterized in that, be provided with at described vent position, for regulating the venting port regulon of described venting port size, to regulate the temperature distribution of described reaction chamber,
Described reaction chamber also comprises the multiple pallets for carrying workpiece to be machined be located in described inner cavity chamber, multiple described pallet the length direction interval of described air shooter arrange and vertical with described air shooter, described air shooter is provided with the inlet mouth corresponding with described tray number, the locular wall of described inner cavity chamber is provided with the venting port corresponding with described tray number, and, on the axial direction due of described inner cavity chamber, described inlet mouth is higher than the upper surface of described pallet, and described venting port is lower than the lower surface of described pallet.
2. reaction chamber according to claim 1, it is characterized in that, described venting port regulon comprises shutter and drive unit, the locular wall that described shutter is close to described inner cavity chamber arranges and is positioned at described vent position, described drive unit drives described shutter to move, with the size regulating described shutter to block described venting port.
3. reaction chamber according to claim 2, it is characterized in that, described inner cavity chamber is columnar structured, and described shutter is annulus, described drive unit is linear electric motors, and described linear electric motors drive described shutter to move on the axial direction due of described inner cavity chamber.
4. reaction chamber according to claim 2, it is characterized in that, described inner cavity chamber is columnar structured, described shutter is annulus, described shutter is provided with the through hole measure-alike with described venting port, described drive unit is rotating machine, and described rotating machine drives described shutter around the center rotating of described inner cavity chamber, thus regulates the overlap ratio of described through hole and described venting port.
5. the reaction chamber according to claim 3 or 4, it is characterized in that, the axial direction due of described inner cavity chamber is provided with the described venting port of many rows, and the quantity of shutter is corresponding with the row of described venting port, multiple described shutter is linked together by web plate, and described drive unit drives described multiple shutter to move.
6. reaction chamber according to claim 2, is characterized in that, the thickness of described shutter is 1 ~ 2mm.
7. reaction chamber according to claim 1, is characterized in that, be provided with the ruhmkorff coil for heating described outer chamber inside in the outside of described outer chamber, described ruhmkorff coil is connected with AC power.
8. a plasma processing device, it comprises reaction chamber, central air induction system and exhaust system, it is characterized in that, described reaction chamber adopts the reaction chamber in claim 1-7 described in any one, described central air induction system is connected with described air shooter, and described exhaust system is connected with the venting port of described outer chamber.
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| CN201110424577.1A CN103160813B (en) | 2011-12-14 | 2011-12-14 | A kind of reaction chamber and apply the plasma processing device of this reaction chamber |
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| CN201110424577.1A CN103160813B (en) | 2011-12-14 | 2011-12-14 | A kind of reaction chamber and apply the plasma processing device of this reaction chamber |
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| CN103160813B true CN103160813B (en) | 2015-10-21 |
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| CN104681385B (en) * | 2013-12-03 | 2017-01-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Air-intake device, reaction cavity and plasma processing equipment |
| CN104538016B (en) * | 2014-12-10 | 2018-03-09 | 上海电器科学研究院 | A kind of silencer |
| CN112159971B (en) * | 2020-09-25 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Semiconductor cavity |
| CN114990526B (en) * | 2022-06-01 | 2024-05-28 | 上海鑫华夏半导体设备有限公司 | High capacity CVD apparatus equipped with exhaust module unit |
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|---|---|---|---|---|
| US4711197A (en) * | 1986-10-16 | 1987-12-08 | Thermco Systems, Inc. | Gas scavenger |
| CN101288157A (en) * | 2005-10-11 | 2008-10-15 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| CN101849279A (en) * | 2007-09-04 | 2010-09-29 | 株式会社Eugene科技 | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102732860B (en) * | 2011-04-14 | 2015-01-14 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and chemical vapor deposition equipment with reaction chamber |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4711197A (en) * | 1986-10-16 | 1987-12-08 | Thermco Systems, Inc. | Gas scavenger |
| CN101288157A (en) * | 2005-10-11 | 2008-10-15 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| CN101849279A (en) * | 2007-09-04 | 2010-09-29 | 株式会社Eugene科技 | Exhaust unit, exhaust method using the exhaust unit, and substrate processing apparatus including the exhaust unit |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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