JP7460621B2 - Method of manufacturing CVD reactor components - Google Patents

Description

The present invention relates to a method for manufacturing a component of a CVD reactor made of quartz and having at least one cavity.

The present invention relates to the use of components manufactured from quartz blanks.

A gas inlet unit made of quartz is described in the patent application WO 2005/023363. The gas inlet unit described there has a central body arranged around the geometric axis of the gas inlet unit. In the central region of the gas inlet unit extend several gas inlet ducts arranged concentrically with one another, which open into outlets extending over the entire circumference. The outlets of the gas inlet ducts adjoin a gas distribution chamber annularly surrounding the central part, which is separated by separation beds into several gas distribution levels arranged above and below. The radial outer edge of each gas distribution chamber is surrounded by a gas distribution wall having a number of gas passage holes leading to the gas outlet openings, through which process gases can be supplied to the process chamber of the CVD reactor. Each of the several gas distribution chambers can be supplied with an individual gas mixture of process gases, so that the process gases can flow at different levels into the process chamber adjacent to the gas inlet unit. In the process chamber, the substrate is placed on a susceptor heated from below and can be coated with III-V, IV or II-VI layers.

Methods for structuring quartz bodies are known from US Pat. Nos. 5,993,623, 5,103,112, 5,106,121, 5,108,136, 5,105,143, 5,200,255, 5,200,306, 5,301,161, 5,302,176, 5,403,182, 5,504,194, 5,505,197, 6,606,161, 6,701,182, 6,813,196, 7,942,197, 8,146,199, 9,151,202, 9,163,197, 9,172,199, 10,187,102, 10,194,103, 10,195,104, 10,196,111, 10,197,121, 10,198,136, 10,199,147, 11,199,157, 12,199,162, 13,199,177, 14,199,189, 15,200,267, 16,200,271, 17,200,282, 17,200,297, 18,211, 199,198, 19,221, 199,199, 19,236, 199,199, 19,243, 199,199, 19,255, 199,199, 19,266

The prior art also includes Patent Documents 6 to 10 and Non-Patent Documents 1 and 2.

German Patent Application No. 10 2008 055 582 German Patent No. 100 29110 European Patent No. 3 036 061 German Utility Model Application Publication No. 20 2017 002 851 DE 10 2018 202 687 A1 DE 102 47 921 A1 DE 10 2010 000 554 A1 DE 10 2014104 218 A1 German Utility Model Application Publication No. 20 2017 005165 German Utility Model Application Publication No. 20 2018 003 890

"Selective, Laser-Induced Etching of Fused Silica at High Scan-Speeds Using KOH", JLMN Journal of Laser Micro/Nanoengineering, Vol. 9, No. 2, 2014, pp. 126-131 "Selective Laser-Induced Etching of 3D Precision Quartz Glass Components for Microfluidic Applications - Up-Scaling of Complexity and Speed", Micromachines, Vol. 8(4), 2017, No. 110, pp. 1-10

The fundamental object of the invention is, in particular, the specification of a method by which components of CVD reactors of complex design can be manufactured from quartz, and the specification of such quartz components.

That object is achieved by the invention specified in the claims, the dependent claims not only representing advantageous developments of the subject matter stated in the independent claims, but also being independent solutions of the object.

The quartz component of the CVD reactor according to the invention has a cavity created by selective laser induced etching (SLE). In this method, local material modification of the initially homogeneous quartz body is carried out in the first process step. For this purpose, an ultrashort pulsed laser beam is focused to a focus in the micrometer range, which is moved through the mass of the quartz body by a three-dimensional movement of the laser beam relative to the quartz workpiece. First, a solid quartz body is created, which can have a polished surface. A focused laser beam is used to expose bulk areas away from the surface. Material modification of the quartz material is carried out at the focus of the laser beam by a multi-photon process.
Material modified in this way can be removed in a second process step using an etchant. The etching fluid preferably takes the form of a liquid, such as KOH. The components of the invention in a CVD reactor will be manufactured using this method, which is a technique known per se. For example, a flow barrier comprising a gas distribution wall, its gas passage holes, a central pedestal, its gas supply line, and its passage holes and extending between the central part and the gas distribution wall can be manufactured using this method on a disc-shaped quartz base. It can be made into the main body. The disc-shaped gas distribution bodies/sections made in one piece in material in this way can then be stacked one on top of the other and, in particular, can be connected to one another by material bonding.
In a particularly preferred variant of the invention, the gas distribution bodies are connected to one another in a materially integral manner. The SLE method described above is also used for the manufacture of such integral gas inlet units made from homogeneous quartz blanks. The method according to the invention can be used in particular to make those components of CVD reactors that cannot be made by other forming processes such as casting, blow molding or machining. Components manufactured according to the invention can have complex cavity geometries and can be used in CVD reactors at temperatures of 500° C. and above. In this case contact can be made with hydrides of main groups IV-, V-, VI- or with organometallic compounds of elements of main groups II-, III-, V- or halogens.
The quartz component of the invention is in particular a substrate carrier, a gas outlet unit, a gas inlet unit, a shield plate, a susceptor, an optical path plate, a sheath or a cover plate. In that case, in particular, these components have a cavity arrangement with a large number of gas passage holes extending between the two surfaces of the components and arranged in an essentially uniform manner on the gas outlet surface. What is provided is provided. Such components are intended in particular to generate a homogeneous gas flow in the process chamber of a CVD reactor, and for this purpose the gas outlet openings of the gas outlet surface, i.e. the free ends of the gas passage holes, are are uniformly distributed over the surface. The gas passage holes can have a diameter of less than 0.1 mm. However, gas passage holes having a diameter smaller than 3 mm, 2 mm, 1 mm, 0.5 mm, or 0.2 mm are also provided.
Furthermore, it is preferably provided that the component has a cavity formed by at least one large chamber forming a gas distribution chamber. The gas distribution chamber branches into a number of gas passage holes, so that the gas outlet opening can communicate with one common gas distribution chamber or with several gas distribution chambers. At least one gas supply line opens into the gas distribution chamber. In particular, it is provided that the inner surface of the gas distribution chamber is designed in a materially integral manner and is only interrupted by the outlet of the at least one gas supply line and the opening of the gas passage hole.
It is thus provided that a gas supply line with a small free cross-section opens into a gas distribution chamber with a large free cross-section, the free cross-section extending at right angles to the direction of flow. The free cross-sectional area of the gas distribution chamber can be at least 10 times larger, preferably 20 times larger than the free cross-sectional area of the at least one gas supply line or the sum of the free cross-sectional areas of the gas supply lines. Further, the free cross-sectional area of the gas distribution chambers extending transversely to the flow through the component is at least 2 times, 5 times, 10 times the sum of the free cross-sectional areas of the gas passage holes exiting the gas distribution chambers. preferably at least 20 times, at least 50 times, or at least 100 times.
Furthermore, in particular it can be provided that the gas passage holes opening into the gas outlet openings extend substantially parallel to one another. If the gas outlet opening is in a plane, the gas passage holes preferably run in mathematically parallel directions. If the gas outlet opening is on the cylindrical outer circumferential surface, the gas passage holes preferably extend radially. Furthermore, the gas outlet holes can be provided out of alignment with the gas supply line or lines.
Furthermore, the cavity of the quartz component can be provided in particular such that the gas supply line does not extend in a straight line, but has several turning points. The gas supply line can have a plurality of linearly extending sections that transition into each other in the form of kink points. However, the gas supply line can also run in a curved manner through the quartz component, in particular on a three-dimensional tortuous path.
In particular, the process is carried out in a CVD reactor where the process temperature exceeds 600, 800, 1000, or 1200°C so that the components can be heated to these temperatures. In particular, the quartz component can be heated to any temperature acceptable for use with quartz components.

Hereinafter, examples of embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 shows essentially diagrammatically in longitudinal section the structure of a CVD reactor equipped with a gas introduction unit 2 according to the invention. FIG. 2 shows five gas distributors 4.1, 4.2, 4.3, 4.4 and 4.5 arranged one above the other to form a gas inlet unit 2. FIG. 3 shows the gas inlet unit. FIG. 4 shows the gas inlet unit shown in FIG. 3 in a cross section taken along line IV-IV in FIG. FIG. 5 shows an enlarged view of detail V of FIG. FIG. 6 shows a cross section along line VI-VI in FIG. FIG. 7 shows a second exemplary embodiment of the gas inlet unit. FIG. 8 shows a third exemplary embodiment in a view similar to FIG. 1, with a gas inlet unit 2 configured according to the invention, a susceptor 19 configured according to the invention, a substrate carrier 33 configured according to the invention, a gas outlet 22 configured according to the invention, and a light path plate 34 configured according to the invention. FIG. 9 shows an enlarged view of detail IX of FIG. FIG. 10 shows an enlarged detail of X in FIG. FIG. 11 shows a cross section along line XI-XI of FIG. FIG. 12 shows a fourth exemplary embodiment of the present invention shown similarly to FIG. 1, with a gas inlet unit 2 constructed in accordance with the invention, a shield plate 42 constructed in accordance with the invention, and a susceptor 19 constructed in accordance with the invention. FIG. 13 shows a cross section along line XIII-XIII in FIG. FIG. 14 shows a cross section taken along line XIV-XIV in FIG. FIG. 15 shows a further exemplary embodiment of a sheath configuration for an optical waveguide. FIG. 16 shows a cross section along line XVI-XVI in FIG.

FIG. 1 shows, essentially in a schematic manner, the structure of a CVD reactor, in which a CVD deposition process can be carried out, in which layers, in particular semiconductor layers, can be deposited on a number of substrates 21. The substrates 21 can consist of III-V compounds, silicon, sapphire or another suitable material. One or more layers are deposited on the substrates, which can consist of elements of the IV, III-V or II-VI main groups. Various process gases are introduced into the process chamber 20 through a gas inlet unit 2, for example by a carrier gas, which can be H ₂ or a noble gas. The process gases can then comprise hydrides of the IV or V main groups or organometallic compounds of the IV or III main groups. A susceptor 19, which can be coated graphite or similar and which carries the substrates 21, is brought to the process temperature from below by a heating device 24, so that the process gases supplied by the gas inlet unit to the center of the process chamber 20 pyrolyze on the surfaces of the substrates arranged in a circle around the center to form layers, in particular monocrystalline layers. Process gases flowing radially through the process chamber 20 exit the process chamber 20 through a gas outlet 22 that surrounds the susceptor 19. The gas outlet 22 is connected to a suction pump (not shown).

The susceptor 19 is supported on a support plate 44 made of quartz. The support plate 44 is supported on a support tube 45 also made of quartz. A diffusion barrier 46 made of quartz extends between the heater 24 and the susceptor 19.

Inside the reactor housing 1, a process chamber ceiling 23 is arranged, through which an attachment part 3 protrudes into the process chamber 20. The gas inlet unit 2 is fixed to the attachment part 3, which may be made of metal, in particular stainless steel.

The gas distributors/sections 4.1, 4.2, 4.3, 4.4 and 4.5 shown in FIG. 2 each have a disk-shaped base plate on which a separation bed 11 is provided, by which the gas distributors 4.1, 4.2, 4.3, 4.4 and 4.5 arranged above each other are separated from each other.

A circular gas distribution wall 6 extends from the circular edge of the separation bed 11 and has a large number of uniformly arranged gas passage holes 13. The gas passage holes 13 have a diameter of less than 3 mm, in particular less than 1 mm. Each of the radially extending gas passage holes 13 opens into a gas outlet opening 7. The height of the gas distributors 4.1, 4.2, 4.3, 4.4, 4.5, measured in the axial direction (relative to the geometric axis) of the gas inlet unit 2, may be between 5 mm and 2 cm. The radially extending width (relative to the geometric axis) of the gas distribution wall 6 may likewise be between 0.5 cm and 2 cm.

The gas distribution wall 6 surrounds a gas distribution chamber 8 extending around the central part 15 . In the exemplary embodiment, the gas distribution chamber 8 is divided into three annular sections 8', 8'' and 8'''. A first section 8' of the gas distribution chamber 8 extends from the gas distribution wall 6 to a flow barrier 12 arranged concentrically with the gas distribution wall 6. Radially inside the section 8'' of the gas distribution chamber 8 surrounded by the flow barrier 12 extends a second flow barrier 12' running concentrically with respect to the gas distribution wall 6, the flow barrier 12' , surrounding section 8'' of gas distribution chamber 8. Section 8'' is adjacent to central part 15. Flow barriers 12, 12' have the same height as gas distribution wall 6 and, in the exemplary embodiment, also have the same radial width. The distance between two adjacent flow barriers 12, 12' or between the central part 15 and the flow barrier 12' or between the flow barrier 12 and the gas distribution wall 6 is equal to the distance between the flow barriers 12, 12' or the wall thickness of the gas distribution wall 6. In particular, the radial width of the sections 8', 8'', 8'' of the gas distribution chamber 8 is greater than 1 cm.

The annular flow barrier 12, 12' has gas passage holes 14, 14' arranged in a uniform circumferential distribution. The diameter of the gas passage holes 14, 14' can have the same diameter as the gas passage holes 13. However, the gas passage holes 14' of the inner flow barrier 12' can also be arranged to have a smaller diameter than the gas passage holes 14 of the outer flow barrier 12, and the gas passage holes 13 of the gas distribution wall 6 can also be arranged to have a larger diameter than the gas passage holes 14 of the flow barrier 12.

The central part 15 is designed as a pedestal and has the same axial height as the flow barrier 12, 12' or the gas distribution wall 6, so that the upper ends of the flow barrier 12, 12' and the gas distribution wall are in the same plane in which the main surface 15', which is the broad surface of the pedestal 15, also extends.

Each pedestal has an outlet 10 from which the gas inlet ducts 9.1, 9.2, 9.3, 9.4 and 9.5 associated with the respective gas distributors 4.1, 4.2, 4.3, 4.4, 4.5 open into the radially inner section 8" of the gas distribution chamber 8. The outlets 10 extend from the upper surface of the separation bed 11 to the lower surface of the separation bed 11 of the upper gas distributor.

It would also be advantageous if the individual gas distributors 4.1, 4.2, 4.3, 4.4 and 4.5 could each be machined "from solid" from a quartz blank. It would also be advantageous if the entire gas inlet unit 2 with the gas distributors 4.1, 4.2, 4.3, 4.4 and 4.5 could then be machined from a single blank, which would then be joined together in a materially integral manner.

The above-mentioned SLE method is preferably used for the manufacture of the gas inlet unit 2, in which a highly focused ultrashort pulsed laser beam is used to modify the material of the bulk areas of the quartz blank by means of writing forms. These bulk areas are the gas passage holes 13, the gas passage holes 14, the sections 8', 8", 8"' of the gas distribution chamber 8, the gas inlet ducts 9.1, 9.2, 9.3, 9.4, 9.5, their outlets 10 and the attachment holes 17. After the material modification has taken place, the modified material is dissolved from the quartz body by an etching solution.

This manufacturing method would be particularly advantageous if it could minimize the number of assembled parts.

The second exemplary embodiment shown in FIG. 7 is a gas inlet unit 2 with two gas distribution chambers 8 arranged one above the other. In that case, the gas distribution chamber is divided by a flow barrier 12 into two sections, namely an upstream section 8" and a downstream section 8'. A gas duct 9.1, 9.2 opens into each gas distribution chamber 8. The essentially cylindrical body of the gas inlet unit 2 has gas passage holes 13, 14, 14' on its cylindrical outer circumferential surface, thereby forming a gas distribution wall 6. The two gas distribution chambers 8 are separated from each other by a separation floor 11. A base plate 31 forms the floor of the lower gas distribution chamber 8.

The gas inlet unit 2 consists of a single piece of quartz. The cavity is fabricated using an SLE process.

In the second exemplary embodiment shown in Figures 8-11, the susceptor 19, the gas outlet 22, the substrate carrier 33, the gas inlet unit 2, and the light passage plate 34 are made of quartz. These components are also manufactured using the SLE process.

Susceptor 19 has a gas supply line 39 that can be used to supply purge gas to pocket 40 . A substrate carrier 33 floating on a gas cushion is supported within a pocket 40. The gas generating the gas cushion is supplied via supply line 39.

The substrate carrier 33 has a supply line 39 on its underside which opens into a gas distribution chamber 38, which in turn has an opening into a pocket 40 in the substrate carrier 33. The substrate 21 is supported in the pocket 40' in the substrate carrier 33.

For the susceptor 19 and substrate carrier 33, the distribution chamber 38 and supply lines 39 are manufactured in an SLE process.

The gas outlet 22 also has a cavity. It surrounds the susceptor 19 and takes the form of an annular body with a plurality of upwardly directed openings, through which the process gas supplied to the process chamber of the CVD reactor flows into the gas collection chamber and from there through the gas outlet holes. Process gas can exit through it.

A plurality of gas inlet openings arranged on an arc are provided through which process gas flows into the annular gas collection chamber. The gas inlet openings have a smaller free cross-sectional area than the gas collection chamber. The gas outlet hole or holes also collectively have a smaller free cross-sectional area than the free cross-sectional area of the gas collection chamber.

The gas inlet unit 2 can be configured as shown in Figures 1 to 6 or as shown in Figure 7.

Reference numeral 32 denotes a pyrometer capable of measuring the temperature of the susceptor surface or the surface of the substrate 21. The process chamber ceiling 23 has a quartz light passage plate 34, which has at least one light passage hole 36. In an exemplary embodiment, three light passage holes 36 are provided, each with a light path passing through it.

10 and 11 show an enlarged view of the light passage hole 36. The light passage hole 36 is surrounded by a gas distribution chamber 38, from which a purge channel 37 extends to the light passage hole 36 and purges the light passage hole 36 with purge gas. The distribution chamber 38 surrounds the light passage hole 36 with a circular ring. A radially inwardly directed purge channel 37 extends from the distribution chamber 38, the purge channel 37 extending obliquely with respect to the direction of the light passage hole 36.

A supply line 39 is provided through which purge gas can be supplied to the distribution chamber 38.

The exemplary embodiment shown in Figures 12 to 14 shows a CVD reactor 1 with a showerhead gas inlet unit 2, in which two different process gases can be supplied to the respective gas distribution chambers 8 through two gas inlet ducts 9.1, 9.2, respectively. The two gas distribution chambers 8 are arranged vertically one above the other and each have a gas passage hole 13, 13' that terminates at the gas outlet face of the gas inlet unit 2. In each gas distribution chamber 8, a flow barrier 12, 12' with a gas passage hole 14 is arranged, which acts as a pressure barrier.

Adjacent to the gas outlet surface 43 is a coolant space 41 through which coolant can flow to cool the gas inlet unit 2. The gas passage holes 13, 13' pass through the coolant space 41.

Below the gas outlet surface 43 is a shield plate 42, which also has a gas passage hole 13.

Beneath the shield plate 42 extends a susceptor 19 made of quartz which is provided with pockets, into each of which a substrate carrier 33 is inserted which rests on a gas cushion.

As in the exemplary embodiment described above, a heating device 24 is provided to raise the susceptor 19 to the process temperature.

15 and 16 show the sheath 48 of the optical waveguide 49. An optical waveguide 49 is inserted into the central cavity 36. Gas passage holes 37 open into the cavity 36 , and these holes form an acute angle and connect to gas supply lines 39 , which extend in the axial direction of the cavity 36 and parallel to the inner wall of the cavity 36 . There is. A plurality of cavities 37, 39 forming a purge line for the purpose of supplying purge gas to the cavity 36 are arranged and arranged evenly around the circumference.

The above-mentioned quartz components (gas passage plate 34, substrate carrier 33, susceptor 19, gas outlet 22, gas inlet unit 2, support plate 44, support tube 45, diffusion barrier 46, sheath 48, and shield plate 42) can each be manufactured from a quartz blank using the SLE process. It is then also envisaged to manufacture only individual components, e.g. gas inlet unit 2 or susceptor 19, using the SLE process and then bonding the components together with a suitable material binder, e.g. borosilicate cement.

The above is intended to describe inventions covered by the application as a whole which in each case independently further develop the prior art by means of a combination of at least the following features, where combinations of two, several or all of these features are also possible:

The method is characterized in that cavities 8', 8", 8"'; 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41 are created by selective laser etching.

Use of a part manufactured from a quartz blank, with at least one cavity 8', 8", 8"'; 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41 are produced by selective laser etching as components of the CVD reactor 1, in which case the fluid flows into at least one cavity 8', 8'' , 8''; 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41; In that case, the components are heated to temperatures above 500°C during use and contain hydrides of the IV-, V-, or VI-main group and/or of the II-, III-, or V-main group. Contact with elemental organometallic or halogen compounds.

The method or use is characterized in that the components are a gas inlet unit 2, a substrate carrier 33, a gas outlet unit 22, a shield plate 42, a susceptor 19, a light passage plate 34, a support tube 45, a diffusion barrier 46, a support plate 44, a sheath 48, or a cover plate.

A method or use characterized in that at least one cavity 8', 8", 8"'; 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41 has a plurality of gas passage holes 13, 14, 14' extending between two surfaces of the component and arranged in an essentially uniform manner on the gas outlet face.

The method or use is characterized in that the diameter of the gas passage holes 13, 14, 14', 37 is less than 3 mm, 2 mm, 1 mm, 0.5 mm, 0.2 mm, or 0.1 mm.

or a method characterized in that at least one cavity has a gas distribution chamber 8, 8', 8'', 38, which communicates with a plurality of gas passage holes 13, 14, 14', 37; use.

A method or use characterized in that the inner surface of the gas distribution chamber 8, 8', 8", 38 is closed in a materially integral manner, except for the gas supply lines 9.1, 9.2, 9.3, 9.4, 9.5, 39 leading thereto and the gas passage holes 13, 14, 14', 37 emerging therefrom.

A method or use characterized in that the free cross-sectional area of the gas distribution chamber 8, 8', 8", 38 extending transversely to the flow through the component is at least 10 times, at least 20 times, at least 50 times, or at least 100 times the sum of the free cross-sectional areas of the gas supply lines 9.1, 9.2, 9.3, 9.4, 9.5, 39 leading to the gas distribution chamber or the gas passage holes 13, 14, 14' exiting the gas distribution chamber.

Method or use characterized in that the gas supply lines 9.1, 9.2, 9.3, 9.4, 9.5, 39 are not aligned with the gas passage holes 13, 14, 14', 37 .

The method or use is characterized in that at least one cavity is a recess 40, 40' for accommodating a substrate 21 or a substrate holder 33.

A method or use characterized in that the gas line 38, 39 has at least one cavity, does not extend in a straight line or has one or more turning points.

A method or use characterized in that during use the component is exposed to temperatures in excess of 600°C, 800°C, 1000°C or 1200°C.

All disclosed features are essential to the invention (both for themselves and in combination with one another). The disclosure of the present application includes in its entirety the disclosure content of the relevant/added priority documents (copies of the earlier application), also with a view to incorporating the features of these documents in the claims of the present application. The dependent claims are characterized by an independent, inventive further development of the prior art, even without the features of the claims cited, in particular in order to file a divisional application on the basis of these claims. The invention specified in each claim may additionally have one or more features specified in the preceding description, in particular those given reference signs and/or specified in the explanation of the signs. The present invention also relates in particular to embodiments in which individual ones of the features mentioned in the preceding description are not implemented, insofar as they are obviously unnecessary for the respective purpose of use or can be replaced by other means having the same technical effect.

1 CVD reactor 2 Gas inlet unit 3 Attachment part 3' Attachment surface 4.1 Gas distribution body/section 4.2 Gas distribution body/section 4.3 Gas distribution body/section 4.4 Gas distribution body/section 4.5 Gas Distribution body/section 5 Gas supply line 6 Gas distribution wall 7 Gas outlet opening 7' Gas outlet opening 8 Gas distribution chamber 8' Downstream section 8'' Downstream section 8''' Upstream section 9.1 Gas inlet duct 9.2 Gas inlet duct 9.3 Gas inlet duct 9.4 Gas inlet duct 9.5 Gas inlet duct 10 Outlet 11 Separation bed 12 Flow barrier 12' Flow barrier 13 Gas passage hole 13' Gas passage hole 14 Gas passage hole 14' Gas passage hole 15 Center Part pedestal 15' Main surface 16 Outlet opening 17 Attachment hole 18 Baffle 19 Susceptor 20 Process chamber 21 Substrate 22 Gas outlet, unit 23 Process chamber ceiling 24 Heating device 25 Recess 26 Gas outlet hole 27 Attachment hole 28 Nut 29 Spring 30 Fixing screw 31 Base plate 32 Pyrometer 33 Substrate carrier, -holder 34 Optical passage plate 35 Cavity, optical path 36 Cavity, optical passage hole 37 Cavity, gas passage hole, purge channel 38 Cavity, gas distribution chamber 39 Cavity, gas supply line 40 Cavity, recess , pocket 40' recess, pocket 41 cavity, coolant space 42 gas outlet surface 43 support plate 44 support tube 45 diffusion barrier 46 flange portion 47 sheath 49 optical waveguide

Claims (6)

A method for manufacturing a gas distribution device for gas distribution in a CVD reactor (1) , comprising the fabrication of a plurality of disk-shaped gas distributors (4.1, 4.2, 4.3, 4.4, 4.5) ,
each of said disk-shaped gas distributors (4.1, 4.2, 4.3, 4.4, 4.5) is produced in a materially integral manner by selective laser etching ;
said gas distributors (4.1, 4.2, 4.3, 4.4, 4.5) are stacked one on top of the other,
Each of the disk-shaped gas distributors (4.1, 4.2, 4.3, 4.4, 4.5) has
A central portion (15);
a gas distribution chamber (8) formed by a cavity;
a separation bed (11) forming the floor of said gas distribution chamber (8);
a gas distribution wall (6) having a plurality of gas passage holes (13) extending from the gas distribution chamber (8);
the gas distribution device having a plurality of gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5) each communicating with one of the gas distribution chambers (8) and located in the central portion (15);
The method according to claim 1, wherein said central portion (15) has the same axial height as said gas distribution wall (6) and the upper end of said gas distribution wall (6) is in the same plane in which the main surface (15') of said central portion (15) also extends . 2. The method of claim 1, wherein the gas distributor (4.1, 4.2, 4.3, 4.4, 4.5) is made of quartz. 1 . The plurality of gas passage holes ( 13 ) extending between two surfaces of the gas distribution wall ( 6 ) are arranged in a uniform distribution on the gas outlet surface. Or the method described in 2. The method according to any one of claims 1 to 3, characterized in that the gas passage holes (13) have a diameter smaller than 3 mm. 5. The method according to claim 1, wherein the outlets (10) of the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5) are not aligned with the gas passage holes (13). 6. The method according to claim 1, further comprising the step of: disposing a flow barrier (12, 12') between the gas distribution wall (6) and the central portion (15), the flow barrier (12, 12') surrounding the central portion (15) and having a plurality of gas passage holes (14, 14').

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