EP3887568A2

EP3887568A2 - Method for producing a component part of a cvd reactor

Info

Publication number: EP3887568A2
Application number: EP19816553.2A
Authority: EP
Inventors: Marcel Kollberg; Francisco Ruda Y Witt
Original assignee: Aixtron SE
Current assignee: Aixtron SE
Priority date: 2018-11-28
Filing date: 2019-11-27
Publication date: 2021-10-06
Also published as: US20220033965A1; DE102018130140A1; TW202035778A; WO2020109357A3; JP7460621B2; CN113302333A; WO2020109357A2; KR20210094043A; JP2022513144A

Abstract

The invention relates to the use of a component made of a quartz blank, as a component part of a CVD reactor (1), in which component at least one cavity (8', 8", 8''; 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41) has been created by selective laser etching, wherein a fluid flows through the at least one cavity (8', 8'', 8''; 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41), and the component, when in use, is heated to temperatures in excess of 500°C and comes into contact with hydrides of the main groups IV, V or VI and/ or with organometallic compounds or halogenides of elements of the main groups II, III or V.

Description

description

Process for making a component of a CVD reactor

Technical field

The invention relates to a method for producing a component of a CVD reactor, which consists of quartz and has at least one cavity. The invention relates to the use of a component made of a quartz blank.

State of the art

[0003] A gas inlet element made of quartz is described in DE 10 2008 055 582 A1. The gas inlet element described there has a central body which is arranged around a figure axis of the gas inlet element. In the central region of the gas inlet member, there are a plurality of gas inlet channels arranged concentrically to one another, which open into mouths that extend over an entire circumference. At the mouths of the gas inlet channels, the central section is surrounded by gas chambers which are separated by dividing floors into several gas distribution levels arranged one above the other. The radially outer edge of each of the gas distribution chambers is surrounded by a gas distribution wall, which have a multiplicity of gas passage openings which open into gas outlet openings, through which process gases can be fed into a process chamber of a CVD reactor. Each of the several gas distribution chambers can be fed with an individual gas mixture of a process gas, so that the process gases can flow in different levels from one another into a process chamber adjoining the gas inlet element. In the process chamber lie on one of below heated susceptor substrates that can be coated with III-V layers or with IV layers or with II-VI layers.

Methods for structuring quartz bodies are known from DE 100 29 110 B4, EP 3 036 061 B1, DE 20 2017 002 851 Ul and DE 10 2018 202 687 Al. A quartz blank with a polished surface is first treated with a laser beam. The laser beam generates ultrashort pulses and is focused. The focus is moved in a writing movement, for example line by line, through the volume of the quartz blank. In focus, the laser beam reaches an intensity above a threshold intensity, at which material conversion takes place in the quartz material. The converted material can then be removed with a fluid etchant, for example potassium hydroxide solution. It is known from the prior art to use this method to produce liquid channels for nozzle bodies of spray heads or spray cans. It is also known to manufacture cavity structures in components for a projection exposure system. It is also known to use this method, known as SLE (selective laser-induced etching), to produce microchannels, shaped bores and cuts in transparent components made of quartz glass, borosilicate glass, sapphire and ruby.

The prior art also includes the article "Selective, Laser-induced Etching of Fused Silica at High Scan-Speeds Using KOH, JLMN- Journal of Laser Micro / Nanoengineering Vol. 9, No. 2, 2014, p. 126 -131 "and DE 102 47 921 Al, DE 10 2010 000 554 Al, DE 10 2014 104 218 Al,

DE 20 2017 005 165 Ul and DE 20 2018 003 890 Ul as well as the article "Selective Laser-induced Etching of 3D Precision Quartz Glass Components for Microfluidic Applications - Up-Scaling of Complexity and Speed. In Micromachines, Vol. 8 (4th ), 2017, No. 110, pp. 1-10 ". Summary of the invention

The invention has for its object to provide a method with which in particular complex components of a CVD reactor can be made of quartz, and to specify such a quartz part.

[0007] The object is achieved by the invention specified in the claims, the subclaims not only representing advantageous developments of the invention specified in the respective independent claims, but also independent solutions to the object.

The part of a CVD reactor according to the invention consisting of quartz has cavities which are produced by selective laser-induced etching (SLE). In this method, a local material conversion of the homogeneous quartz starting body is carried out in a first process step. For this purpose, an ultrashort pulsed laser beam is focused on a focus in the micrometer range, with the focus being guided through the volume of the quartz body in writing by a three-dimensional movement of the laser beam relative to the quartz workpiece. The first step is to manufacture a solid quartz body that can have a polished surface. A focused laser beam is used to expose volume areas that are distant from the surface. Using a multi-photon process, the focus of the laser beam is a material conversion of the quartz material. The material converted in this way can be removed in a second process step using an etching fluid. The etching fluid is preferably a liquid, for example KOH. According to the invention, this method, known per se, is intended to manufacture components of a CVD reactor. For example, with this method, the gas distribution wall, its gas passage openings, the central base, its gas supply lines and the distance between the central section can be in a disk-shaped quartz base body and gas distribution wall extending flow barrier including the passage opening are manufactured. The disk-shaped gas distribution bodies / sections which are produced in this way and have the same material can then be stacked one on top of the other and, in particular, be integrally connected to one another. In a particularly preferred variant of the invention, the gas distribution bodies are connected to one another in the same material. The previously described SLE method is also used to produce such a one-piece gas inlet organ made from a uniform quartz blank. With the method according to the invention, in particular those components of a CVD reactor can be manufactured which cannot be manufactured by other shaping methods, for example by casting, blowing or machining. The components produced according to the invention can have complex cavity designs and are able to be used at temperatures above 500 ° C. in a CVD reactor, where they come into contact with hydrides of the IV, V or VI main group or with organometallic compounds or halogens of elements of the II, III or V main group. The quartz parts according to the invention are in particular substrate carriers, gas outlet elements, gas inlet elements, screen plates, susceptors, light passage plates, cladding tubes or cover plates, it being provided in particular that these components have cavity arrangements which have a multiplicity of gas passage openings which extend between two surfaces of the component and in Are arranged substantially uniformly on a gas outlet surface. Such components serve in particular the purpose of generating a homogeneous gas flow in a process chamber of a CVD reactor, for which purpose the gas outlet openings of a gas outlet surface, that is to say the free ends of gas through-holes, are distributed uniformly over a surface. The gas passage bores can have a diameter that is less than 0.1 mm. However, it is also provided that the gas passage bores have a diameter that is less than 3 mm,

2 mm, 1 mm, 0.5 mm or 0.2 mm. It is also preferably provided that the component has a cavity which is at least formed by a large chamber which forms a gas distribution chamber. The Gasverteilkam mer branches into a variety of gas through holes, so that gas outlet openings can communicate with a common or with several gas distribution chambers. At least one gas supply line opens into the gas distribution chamber. It is particularly provided that an inner surface of the gas distribution chamber is made of the same material and is interrupted only by the mouth of the at least one gas supply line and the openings of the gas through holes. It can thus be provided that a gas supply line with a small free flow cross-section opens into a gas distribution chamber which has a large free cross-section, the free cross-sectional area extending perpendicular to the direction of flow. The free cross section of the gas distribution chamber can be at least ten times, preferably twenty times larger than the free cross section of the at least one gas feed line or the sum of the free cross sections of several gas feed lines. It is further provided that the free cross section of the gas distribution chamber extending transversely to the flow through the constituent is at least twice, five times, ten times, preferably at least twenty times, at least fifty times or at least one hundred times as large as the sum of the free cross sections from the Gas distribution chamber leading gas passage bore. In particular, it can further be provided that the gas passage bores, which open into a gas outlet opening, run essentially parallel to one another. If the gas outlet openings are in one plane, the gas through holes preferably run mathematically parallel. If the gas outlet openings lie on a cylindrical surface, the gas passage bores preferably run in a radial direction. It can further be provided that the gas outlet bores are not aligned with one or more gas supply lines. Furthermore, it can be provided that the cavities, in particular gas lines, do not run in a straight line within the quartz component, but rather have several change of direction positions. The gas supply lines can have rectilinear sections which merge into one another in the form of kinks. However, the gas lines can also wind through the quartz component and in particular run along a three-dimensionally winding path. In particular, it is provided that processes are carried out in the CVD reactor in which the process temperature is greater than 600, 800, 1,000 or 1,200 ° C., so that the constituent can be heated to these temperatures. The quartz part can in particular be heated to any temperature that is permissible for the use of quartz parts.

BRIEF DESCRIPTION OF THE DRAWINGS An exemplary embodiment of the invention is explained below with reference to the attached drawings. Show it:

Fig. 1 in a longitudinal cross section essentially schematically

Structure of a CVD reactor with a gas inlet element 2 according to the invention,

2 is a perspective view of five gas distribution bodies 4.1, 4.2,

4.3, 4.4 and 4.5, which form a gas inlet gate 2 arranged one above the other,

3 a gas inlet element in a view,

4 shows the gas inlet element shown in FIG. 3 in section along the line IV-IV in FIG. 3,

5 enlarged, the section V in Figure 4, 6 shows a section along the line VI-VI in FIG. 4,

7 shows a second exemplary embodiment of a gas inlet element,

8 shows a third exemplary embodiment in a representation according to FIG. 1 with a gas inlet valve 2 designed according to the invention, a susceptor 19 designed according to the invention, a substrate carrier 33 designed according to the invention, a gas outlet 22 designed according to the invention and with a light passage plate 34 designed according to the invention,

9 enlarged, the detail IX in Figure 8,

10 enlarged, the detail X in Figure 8,

11 shows the section along the line XI-XI in FIG. 10,

12 shows a fourth exemplary embodiment of the invention in a representation according to FIG. 1 with a gas inlet element 2 designed according to the invention, a shield plate 42 designed according to the invention and a susceptor 19 designed according to the invention,

13 shows the section along the line XIII-XIII in FIG. 12,

14 shows the section along the line XIV-XIV in FIG. 12,

Fig. 15 shows another embodiment in the form of a cladding tube for an optical waveguide and 16 shows the section along the line XVI-XVI in FIG. 15.

Description of the embodiments

Figure 1 shows essentially schematically the structure of a CVD reactor, in the process chamber 20, a CVD deposition process can be carried out, in which an in particular semiconducting layer can be deposited on several substrates 21. The substrates 21 can consist of III-V compounds, silicon, sapphire or another suitable material. One or more layers are deposited on the substrate, which may consist of elements from the IV main group, the III-V main group or the II-VI main group. Various process gases are introduced into the process chamber 20 through a gas inlet member 2 by means of a carrier gas, for example Fh, or a noble gas, the process gases Hyd ride of the V main group, the IV main group or metal-organic compounds of the IV main group or the III- Main group can contain. A substrate 19 carrying susceptor 19 made of coated graphite or the like is applied from below with a heating device 24 to a process temperature, so that the process gases fed into the center of the process chamber 20 by means of the gas inlet element are arranged on the surfaces of the circles around the Disassemble the center-arranged substrates pyrolytically to form a single-crystal layer. The process gas, which flows through the process chamber 20 in the radial direction, leaves the process chamber 20 through a gas outlet 22 surrounding the susceptor 19, which is connected to a vacuum pump, not shown.

The susceptor 19 is supported on a support plate 44 made of quartz. The support plate 44 is supported on a support tube 45, which if just consists of quartz. A diffusion barrier 46 made of quartz extends between the heating device 24 and the susceptor 19. Within the reactor housing 1 there is a process chamber cover 23 through which a fastening section 3 protrudes into the process chamber 20. The gas inlet element 2 is fastened to the fastening section 3, which can consist of metal, in particular stainless steel.

The gas distribution body / sections shown in Figure 2 4.1, 4.2, 4.3, 4.4 and 4.5 each have a circular disc-shaped base plate, which forms a partition 11, by means of which gas distribution body 4.1, 4.2, 4.3, 4.4 and arranged one above the other 4.5 are separated.

From the circular edge of a partition 11 extends an annular gas distribution wall 6, which has a plurality of evenly arranged gas through holes 13. The gas passage holes 13 have a diameter which is less than 3 mm and in particular less than 1 mm. The gas passage bores 13, which extend in the radial direction, each open into a gas outlet opening 7. The height of a gas distribution body 4.1, 4.2, 4.3, 4.4, 4.5 measured in the axial direction - with respect to the figure axis - of the gas inlet member 2 can be between 5 mm and 2 cm be. The width of the gas distribution wall 6, which extends in the radial direction - based on the figure axis - can likewise be in the range between 0.5 cm and 2 cm.

The gas distribution wall 6 surrounds a gas distribution chamber 8 which extends around the central section 15. The gas distribution chamber 8 is, for example, divided into three annular sections 8 ', 8 "and 8 in the embodiment. A first section 8' of the gas distribution chamber 8 extends from the gas distribution wall 6 to a flow barrier 12 which is arranged concentrically with the gas distribution wall 6. Radially within the section 8 'of the gas distribution chamber 8 which is surrounded by the flow barrier 12, a second likewise extends Flow barrier 12 'running centrally to the gas distribution wall 6, which surrounds a section 8'"of the gas distribution chamber 8 which adjoins the central section 15. The flow barriers 12, 12 'have the same height as the gas distribution wall 6 and, in the exemplary embodiment, also the same radial width The distance between two adjacent flow barriers 12, 12 'or between the central section 15 and the flow barriers 12' or between the flow barriers 12 and the gas distribution wall 6 is greater than the wall thickness of the flow barriers 12, 12 'or the gas distribution wall 6. The radial The width of the sections 8 ', 8 ", 8'" of the gas distribution chamber 8 is in particular greater than 1 cm.

The annular flow barriers 12, 12 'have gas passage holes 14, 14' which are arranged in a uniform circumferential distribution. The diameter of the gas passage bore 14, 14 'can have the same diameter as that of the gas passage bore 13. However, it is also provided that the gas passage bores 14 'of an inner flow barrier 12' have a smaller diameter than the gas passage bores 14 of an outer flow barrier 12 and that the gas passage bores 13 of the gas distribution wall 6 have a larger diameter than the gas passage bores 14 the flow barrier 12. The central section 15 is designed as a base and has the same axial height as the flow barriers 12, 12 'or the gas distribution wall 6, so that the upper sides of the flow barriers 12, 12' and the gas distribution wall lie in the same plane, in which a broad side surface 15 'of the base 15 also extends. Each of the bases has a mouth 10 with which the respective

Gas distribution body 4.1, 4.2, 4.3, 4.4 and 4.5 assigned gas inlet duct 9.1, 9.2, 9.3, 9.4, 9.5 opens into the radially inner section 8 "of the gas distribution chamber 8. The openings 10 extend from the top of the partition 11 to the bottom of the partition 11 of an upper gas distributor.

[0019] It is also considered advantageous that either the individual gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5 can in each case be worked "from the full" out of a quartz blank. It is also considered advantageous that the entire gas inlet element 2 also includes The gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5, which are then interconnected in the same material, can be worked out from a single blank.

For the production of the gas inlet element 2, the SLE method already mentioned above is preferably used, in which, with a strongly focused and ultrashort pulsed laser beam, the volume ranges of the quartz blank material are changed to a certain extent. These volume areas are the gas passage bores 13, the gas passage bores 14, the sections 8 ', 8 ", 8" of the gas distribution chamber 8, the gas inlet channels 9.1, 9.2, 9.3, 9.4, 9.5, their mouths 10 and the fastening opening 17. After that Ma material conversion, the converted material is removed from the quartz body by means of an etching liquid.

It is considered particularly advantageous that the parts to be assembled can be minimized with this production method.

The second exemplary embodiment shown in FIG. 7 is a gas inlet element 2 with two gas distribution chambers 8 arranged one above the other, the gas distribution chambers 8 being divided into two sections by means of a flow barrier 12, namely an upstream section 8 ″ and a downstream section A gas chamber opens into each gas distribution chamber 8. nal 9.1, 9.2. The essentially cylindrical body of the gas inlet element 2 has gas passage bores 13, 14, 14 'on its cylindrical surface and thereby forms a gas distribution wall 6. The two gas distribution chambers 8 are separated from one another by means of a partition 11. A base plate 31 forms the bottom of the lower gas distribution chamber 8.

The gas inlet member 2 consists of a one-piece quartz part. The cavities are manufactured using the SLE process.

In the second exemplary embodiment shown in FIGS. 8 to 11, there is a susceptor 19, a gas outlet 22, a substrate carrier 33, a gas inlet member 2 and a light passage plate 34 made of quartz. These components are also manufactured using the SLE process.

The susceptor 19 has a gas supply line 39, with which a flushing gas can be fed into a pocket 40. In the pocket 40 is a substrate 33, which hovers on a gas cushion. The gas generating the gas cushion is fed in through the feed line 39.

The substrate carrier 33 has on its underside a feed line 39 which opens into a gas distribution chamber 38, which in turn has openings which open into a pocket 40 of the substrate carrier 33. The substrate 21 is stored in the pocket 40 'of the substrate carrier 33. The distribution chamber 38 and the feed line 39 are at 19 and at

Substrate carrier 33 made with the SLE method.

[0028] The gas outlet 22 also has cavities. It is a ring-shaped body which surrounds the susceptor 19 and which follows several Has openings facing above, through which the process gas fed into the process chamber of the CVD reactor can flow into a gas collection chamber, from which the process gas can exit through a gas outlet opening.

There are several gas feed openings arranged on an arc of a circle through which the process gas flows into the annular gas collecting chamber. The gas inlet openings have a smaller free cross section than the gas collection chamber. One or more gas outlet openings in total also have a smaller free cross section than the cross section of the gas collection chamber.

The gas inlet element 2 can be configured according to FIGS. 1 to 6 or according to FIG. 7.

The reference numeral 32 denotes pyrometers with which temperatures of the susceptor surface or the surface of the substrate 21 can be measured. In the process chamber ceiling 23 there is a light passage plate 34 made of quartz, which has at least one light passage opening 36. In the exemplary embodiment, three light passage openings 36 are provided, each through which an optical path passes.

Figures 10 and 11 show the light passage opening 36 enlarged. The light passage opening 36 is surrounded by a gas distribution chamber 38, from which flushing channels 37 extend to the light passage opening 36 in order to flush the light passage opening 36 with a flushing gas. The distribution chamber 38 surrounds the light passage opening 36 in a ring shape. From the distributing chamber 38 radially inwardly directed rinsing channels 37 start, the rinsing channels 37 extending obliquely to the direction of the light passage opening 36. A feed line 39 is provided through which a flushing gas can be fed into the distribution chamber 38.

The exemplary embodiment shown in FIGS. 12 to 14 shows a CVD reactor 1 with a showerhead gas inlet element 2, in which two different process gases can be fed into one gas distribution chamber 8 through two gas inlet channels 9.1, 9.2. The two gas distribution chambers 8 lie vertically one above the other and each have gas passage bores 13, 13 ′, which end in a gas outlet surface of the gas inlet element 2. Within each gas distribution chamber 8 there is a flow barrier 12, 12 'with gas passage bores 14, the flow barriers 12, 12' acting as pressure barriers.

A coolant volume 41 adjoins the gas outlet surface 43, through which a coolant can flow in order to cool the gas inlet element 2. The gas passage bores 13, 13 'pass through the coolant volume 41.

A shield plate 42, which also has gas passage bores 13, is arranged below the gas outlet surface 43.

A susceptor 19 made of quartz extends below the screen plate 42 and has pockets in each of which there are substrate carriers 33 which rest on a gas cushion.

As in the previous exemplary embodiments, a heating device 24 is provided in order to bring the susceptor 19 to a process temperature. Figures 15 and 16 show a cladding tube 48 for a Lichtwellenlei ter 49. In a central cavity 36, the optical fiber 49 is inserted. In the cavity 36 open gas passage holes 37 which connect to gas supply lines 39 forming an acute angle, the run parallel to the inner wall of the cavity 36 in the axial direction of the cavity 36. There are several evenly distributed arrangements of cavities 37, 39 provided in the circumferential direction, which form the purge lines for feeding a purge gas into the cavity 36.

The quartz parts described above (gas passage plate 34, substrate support 33, susceptor 19, gas outlet 22, gas inlet member 2, support plate 44, support tube 45, diffusion barrier 46, cladding tubes 48 and shield plate 42) can each be made from a quartz blank with the SLE - Process are manufactured, it also being provided that only individual components, for example the gas inlet device 2 or the susceptor 19, are manufactured using the SLE method and the components are connected to one another with a suitable material-locking agent, for example by means of a boron silicate cement.

[0041] The above statements serve to explain the inventions covered by the application as a whole, which further develop the state of the art independently at least through the following combinations of features, two, more or all of these combinations of features also being able to be combined, namely :

A method, which is characterized in that the cavity 85 8 ", 8"; 13, 14, 14 '; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41 is made by selective laser etching. Use of a component made from a quartz blank, in which at least one cavity 85 8 ", 8"; 13, 14, 145 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41 was generated, as part of a CVD reactor 1, wherein through the at least one cavity 85 8 ", 8"; 13, 14, 145 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41 a fluid flows and the component, when used, is heated to temperatures above 500 ° C. and comes into contact with hydrides of the IV, V or VI main group and / or with metal organic compounds or halogen compounds of elements of the II, III or V main group.

A method or use, which are characterized in that the component comprises a gas inlet member 2, a substrate support 33, a gas outlet member 22, a screen plate 42, a susceptor 19, a light passage plate 34, a support tube 45, a diffusion barrier 46 , A support plate 44, cladding tube 48 or a cover plate.

A method or use, which are characterized in that the at least one cavity 85 8 ", 8"; 13, 14, 145 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37, 38, 39, 40, 41 has a plurality of gas passage openings 13, 14, 14 ', which extend between two surfaces of the component and are arranged substantially uniformly distributed on a gas outlet surface.

A method or use, which are characterized in that the gas passage bore 13, 14, 145 37 has a diameter which is less than 3 mm, 2 mm, 1 mm, 0.5 mm, 0.2 mm or Is 0.1 mm.

A method or use, which are characterized in that the at least one cavity is a gas distribution chamber 8, 85 8 ", 38 which communicates with the plurality of gas passage bores 13, 14, 14 ', 37.

A method or use, which are characterized in that an inner surface of the gas distribution chamber 8, 83 8 ", 38 except for the gas supply lines leading into it 9.1, 9.2, 9.3, 9.4, 9.5, 39 and the executing from it Gas passage bores 13, 14, 145 37 material ge is closed.

A method or use, which are characterized in that the free cross-section of the gas distribution chamber 8, 85 8'5 38 extending transversely to the flow through the component is at least ten times, at least twenty times, at least fifty or at least one hundred times as large such as the sum of the free cross sections of the gas supply lines 9.1, 9.2, 9.3, 9.4, 9.5, 39 leading into the gas distribution chamber or of the gas passage bores 13, 14, 145 37 leading out of it. A method or use which is characterized in that are that the gas supply lines 9.1, 9.2, 9.3, 9.4, 9.5, 39 are out of alignment with the gas passage bores 13, 14, 145 37.

A method or a use, which are characterized in that the at least one cavity is a depression 40, 40 'for receiving a substrate 21 or a substrate holder 33.

A method or a use, which are characterized in that the at least one cavity is a gas line 38, 39, which does not run in a straight line, or has one or more change of direction points. A method or use which is characterized in that the component is exposed to temperatures of greater than 600, greater than 800, greater than 1,000 or greater than 1,200 ° C when used.

All disclosed features are essential to the invention (by themselves, but also in combination with one another). The disclosure of the associated / attached priority documents (copy of the prior application) is hereby also included in full in the disclosure of the application, also for the purpose of including features of these documents in claims of the present application. The sub-claims characterize, even without the features of a referenced claim, independent inventive developments of the prior art with their features, in particular in order to make divisional applications based on these claims. The invention specified in each claim can additionally have one or more of the features specified in the preceding description, in particular provided with reference numbers and / or in the list of reference numbers. The invention also relates to design forms in which some of the features mentioned in the preceding description are not realized, in particular insofar as they are recognizably unnecessary for the respective intended use or can be replaced by other technically equivalent means.

List of reference numbers

1 CVD reactor 14 gas passage hole

2 gas inlet member 14 'gas passage hole

3 fastening section 15 central section, base 3 'fastening surface 15' broadside surface

4.1 Gas distribution body / section 16 passage opening

4.2 Gas distribution body / section 17 Fastening opening

4.3 Gas distribution body / section 18 baffle

4.4 Gas distribution body / section 19 Susceptor

4.5 Gas distribution body / section 20 process chamber

5 gas supply line 21 substrate

6 gas distribution wall 22 gas outlet, organ

7 gas outlet opening 23 process chamber ceiling 7 'gas outlet opening 24 heating device

8 gas distribution chamber 25 recess

8 'downstream section 26 gas outlet opening

8 "downstream section 27 mounting hole

upstream section 28 nut

9.1 Gas inlet channel 29 spring

9.2 Gas inlet duct 30 fastening screw

9.3 Gas inlet duct 31 base plate

9.4 Gas inlet channel 32 pyrometers

9.5 Gas inlet duct 33 substrate carrier, holder

10 mouth 34 light passage plate

11 divider 35 cavity, optical path

12 flow barrier 36 cavity, light passage 12 'flow barrier opening

13 gas passage bore 37 cavity, gas passage bore 13 'gas passage bore, flushing channel Cavity, gas distribution chamber cavity, gas supply cavity, recess, pocket recess, pocket

Cavity, coolant volume

Shield plate

Gas outlet area

Support plate

Support tube

Diffusion barrier

Flange section

Cladding tube

optical fiber

Claims

Expectations

1. A method for producing a component of a CVD reactor (1) which consists of quartz and at least one cavity (8 ', 8 ", 8 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35 , 36, 37, 38, 39, 40, 41), characterized in that the cavity (8 ', 8 ", 8 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36 , 37, 38, 39, 40, 41) is made by selective laser etching.

2. Use of a component made of a quartz blank, in which at least one cavity (8 ', 8 ", 8"; 13, 14, 14'; 9.1, 9.2, 9.3, 9.4, 9.5; 35, 36, 37 , 38, 39, 40, 41) was generated as part of a CVD reactor (1), with 13, 14, 145 9.1, 9.2, 9.3, 9.4, 9.5 through the at least one cavity (85 8 ", 8") ; 35, 36, 37, 38, 39, 40, 41) a fluid flows and the component, when used, is heated to temperatures above 500 ° C. and comes into contact with hydrides of the IV, V or VI main group and / or with organometallic compounds or halogen compounds of elements of the II, III or V main group. 3. The method according to claim 1 or use according to claim 2, characterized in that the component comprises a gas inlet member (2), a substrate carrier (33), a gas outlet member (22), a screen plate (42), a susceptor (19) , A light passage plate (34), a support tube (45), a diffusion barrier (46), a support plate (44), cladding tube (48) or a cover plate. 4. The method according to any one of claims 1 or 3 or use according to

Claim 2, characterized in that the at least one cavity (85 8 ", 8"; 13, 14, 145 9.1, 9.2, 9.

3, 9.

4, 9.5; 35, 36, 37, 38, 39, 40, 41) has a plurality of gas passage openings (13, 14, 14 ') which extend between two surfaces of the component and are arranged essentially uniformly distributed on a gas outlet surface.

5. The method or use according to any one of the preceding claims, characterized in that the gas passage bore (13, 14, 14 ', 37) has a diameter which is less than 3 mm, 2 mm, 1 mm, 0.5 mm, 0, Is 2 mm or 0.1 mm.

6. The method or use according to any one of the preceding claims, characterized in that the at least one cavity has a gas distribution chamber (8, 85 8 ", 38) which communicates with the plurality of gas through holes (13, 14, 145 37).

7. The method or use according to one of the preceding claims, characterized in that an inner surface of the gas distribution chamber (8, 85 8 ", 38) except for the gas feed lines (9.1,

9.2, 9.3, 9.4, 9.5, 39) and the gas passage bores (13, 14, 145 37) leading out of it are closed using the same material.

8. The method or use according to any one of the preceding claims, characterized in that the free cross section of the gas distribution chamber (8, 85 8 ", 38) extending transversely to the flow through the component at least ten times, at least twenty times, at least fifty times or at least a hundred times as much is as large as the sum of the free cross sections of the gas supply lines leading into the gas distribution chamber (9.1, 9.2, 9.3, 9.4, 9.5, 39) or of the gas through holes (13, 14, 145 37) leading out of it.

9. The method or use according to claim 7 or 8, characterized in that the gas supply lines (9.1, 9.2, 9.3, 9.4, 9.5, 39) are except the escape position to the gas passage bores (13, 14, 145 37).

10. The method or use according to any one of the preceding claims, characterized in that the at least one cavity is a recess (40, 40 ') for receiving a substrate (21) or a substrate holder (33).

11. The method or use according to any one of the preceding claims, characterized in that the at least one cavity is a gas line (38, 39) which is not straight, or has one or more direction change points.

12. The method or use according to any one of the preceding claims, characterized in that the component in its use

Temperatures of greater than 600, greater than 800, greater than 1,000 or greater than 1,200 ° C is exposed.

13. Device for gas distribution in a CVD reactor with a gas supply line (9.1, 9.2, 9.3, 9.4, 9.5, 39) leading into a gas distribution chamber (8, 8 ', 8 ", 38) formed by a cavity and a plurality out of it leading gas passage bores (13, 14, 14 ', 37), characterized in that the inner surface of the gas distribution chamber (8, 85 8 ",

38) except for the gas supply lines leading into it (9.1, 9.2, 9.3, 9.4, 9.5,

39) and the gas passage bores (13, 14, 145 37) leading out of it are closed using the same material.

14. The method, use or device, characterized by one or more of the characterizing features of one of the preceding claims.