TW202213616A - Transport ring for a CVD reactor - Google Patents
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- TW202213616A TW202213616A TW110123925A TW110123925A TW202213616A TW 202213616 A TW202213616 A TW 202213616A TW 110123925 A TW110123925 A TW 110123925A TW 110123925 A TW110123925 A TW 110123925A TW 202213616 A TW202213616 A TW 202213616A
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Abstract
Description
本發明係有關於一種運輸環,用於運輸基板且/或用於將基板放置於CVD反應器之殼體之製程室中的基板座上,此運輸環具有圍繞軸線延伸的環形本體,該本體具有環形的下部,其中,該下部具有外區段並且在該外區段之徑向以內具有用於放置基板之邊緣的放置面,其中,該外區段係藉由間隔件以承載環形的上部,而該上部在平行於該軸線之方向上係與該外區段之徑向外側區域隔開一定距離。The present invention relates to a transport ring for transporting substrates and/or for placing substrates on substrate holders in a process chamber of a CVD reactor housing, the transport ring having an annular body extending around an axis, the body has an annular lower portion, wherein the lower portion has an outer section and radially inwardly of the outer section has a resting surface for placing the edge of the substrate, wherein the outer section supports the annular upper portion by means of spacers , and the upper portion is spaced a certain distance from the radially outer region of the outer section in a direction parallel to the axis.
本發明進一步係關於一種用於承托基板之裝置,具有此種運輸環。The invention further relates to a device for supporting substrates having such a transport ring.
本發明進一步係關於一種具有用於承托基板之裝置的CVD反應器,該裝置具有運輸環。The invention further relates to a CVD reactor having a device for supporting a substrate, the device having a transport ring.
本發明進一步係關於一種製造運輸環之方法。The present invention further relates to a method of manufacturing a transport ring.
CVD反應器具有對外氣密的殼體,殼體中設有基板座,基板座承載一個或數個基板架,基板架上可各佈置一個基板。藉由設於殼體中的加熱裝置,可將基板座加熱至製程溫度。由數種組分組成的製程氣體可被送入在基板座與製程室頂部之間延伸的製程室中。該等組分可為載氣、第三主族元素之有機金屬化合物及第五主族元素之氫化物。透過熱解及化學反應,在基板表面沉積層。為了搬運基板而設置有運輸環,其係自下方托持基板邊緣。此種運輸環記載於DE 10 2017 129 699 A1。The CVD reactor has a shell that is airtight to the outside, and a substrate seat is arranged in the shell. The substrate seat supports one or several substrate racks, and one substrate can be arranged on each of the substrate racks. The substrate holder can be heated to the process temperature by the heating device provided in the casing. A process gas consisting of several components can be fed into a process chamber extending between the substrate holder and the top of the process chamber. These components may be a carrier gas, organometallic compounds of elements of the third main group, and hydrides of elements of the fifth main group. Through pyrolysis and chemical reactions, layers are deposited on the surface of the substrate. In order to transport the substrate, a transport ring is provided, which holds the edge of the substrate from below. Such a transport ring is described in DE 10 2017 129 699 A1.
關於CVD反應器的細節描述另見DE 103 23 085 A1、US 2018/138074 A1及DE 10 2017 101 648 A1。For a detailed description of the CVD reactor see also DE 103 23 085 A1, US 2018/138074 A1 and DE 10 2017 101 648 A1.
佈置在CVD反應器內部且特別是緊鄰基板或基板架的CVD反應器部件,必須被設計成使得形成於基板之朝向製程室的一側之溫度剖面儘可能平滑。該技術關注於儘可能平坦的溫度剖面,以便基板表面之表面溫度之局部偏差儘可能小。The CVD reactor components arranged inside the CVD reactor and in particular in the immediate vicinity of the substrate or substrate holder must be designed such that the temperature profile formed on the side of the substrate facing the process chamber is as smooth as possible. This technique focuses on a temperature profile that is as flat as possible so that local deviations in the surface temperature of the substrate surface are as small as possible.
US 2018/0030617 A1揭露一種具有下部的運輸環,該下部可承載基板且具有諸多間隔件,在該等間隔件上可放置環形的上部,從而在下部與上部之間形成透氣的縫隙。US 2018/0030617 A1 discloses a transport ring having a lower portion that can carry a substrate and has spacers on which an annular upper portion can be placed, thereby forming a gas-permeable gap between the lower portion and the upper portion.
本發明之目的在於改良同類型運輸環以利其使用,且特別是提供一種可用簡化方式製造此種運輸環之方法。藉由此種傳輸環,在基板之處理過程中,能在朝向製程室之基板表面實現儘可能平坦的溫度分佈。另外,自基板架到基板亦形成明確的溫度躍變。The object of the present invention is to improve the transport ring of the same type to facilitate its use, and in particular to provide a method of manufacturing such a transport ring in a simplified manner. By means of such a transfer ring, during the processing of the substrate, a temperature distribution as flat as possible can be achieved on the surface of the substrate facing the process chamber. In addition, there is also a well-defined temperature jump from the substrate holder to the substrate.
該目的藉由申請專利範圍所給出之發明而達成,其中,附屬項不僅為並列請求項中所提供之解決方案的有利改良,亦為能達成該目的之獨立解決方案。This object is achieved by the invention given in the scope of the patent application, wherein the subsidiary item is not only an advantageous improvement of the solution provided in the concurrent claim, but also an independent solution to achieve the object.
不同於DE 10 2017 129 699 A1中所描述之運輸環,本發明之間隔件係沿周向彼此間隔開。本發明之間隔件可為空間上彼此分開的單接條。藉由間隔件以將下部與上部間隔開。可如下設置:間隔件圍繞軸線(特別是裝置之對稱軸線)周向均勻分佈。間隔件較佳為單接條,方位角的間隙在諸單接條之間延伸。在此等方位角的間隙中,上部自由地跨越下部。在上部與下部之間存在有縫隙,以軸線觀之,該縫隙在徑向向內方向及徑向向外方向上皆為開放的。熱輻射可通過此縫隙。然而,氣體亦可穿過該縫隙。因此,該縫隙可供熱流通過,或者說可用來輸送熱量。誠然,該縫隙係使得自運輸環底面到運輸環頂面之熱流小於不具有縫隙的運輸環。該縫隙實質上中斷了豎向上的熱傳導。縫隙高度可對有待達到的目標溫度起決定性作用。可如下設置:縫隙具有兩個彼此平行延伸的限制面。第一個限制面由形成外環的上部之底面所形成。第二限制面可由下部之外區段所形成。兩個限制面可皆為平面。兩個相鄰的單接條之間的間隙之圓周角可大於單接條之圓周角。間隙之圓周角可大於60°。單接條之圓周角可小於10°、15°、20°或30°。可設置三個、四個、五個或六個圍繞軸線周向均勻分佈的單接條。根據本發明之第二態樣(可包含第一態樣之特徵),如下設置:下部及上部係藉由數個彼此分開的單接條以同質地相互連接,並且單接條之平面輪廓較佳係呈三角形。其中,長的三角形邊可與上部之徑向內緣面所形成的定心面重合。單接條之三角形平面輪廓之兩條較短三角形邊可為同等長度。該等三角形邊(特別是較短的三角形邊)可相交於一個交點。該交點可與下部或上部之外周面相隔開。該交點亦可與上部之內周面隔開。特別是如下設置:一個單接條之兩條三角形邊係分別與一個相鄰的單接條之一條三角形邊對齊。根據本發明之第三態樣(可包含本發明之其他態樣的特徵),如下設置:數個彼此間隔開的環形區段(特別是環形物體)係彼此重疊。特別是如下設置:在最上面的外環與基體之間設有中間環。外環及中間環可藉由間隔件相互連接,其中,間隔件係由如前所述之單接條所形成。中間環及基體亦可藉由單接條相互連接,其中,將基體與中間環連接起來的單接條係被佈置成與將中間環與最上面的外環連接起來的單接條錯開一定角度。可設置數個中間環,其中,在上下疊置的諸多環之間分別形成有縫隙,該縫隙較佳地具有彼此平行延伸的縫隙壁。一個或數個上下疊置且特別是在基體上方延伸的環係可疊合地彼此重疊。根據本發明之另一態樣(可包含本發明之前述態樣的特徵),數個環形物體可由同一種材料或由不同材料製成。兩個由同一種材料製成的物體較佳係同質地相互連接,因此,藉由材料去除方法以製造物體之間的間隙。兩個由不同材料製成的物體可為兩個可相互分離的單體。較佳地,材料可考慮採用石墨、SiC、陶瓷材料、石英或金屬材料。外環特別是執行熱屏蔽功能,且為此而藉由前述構件以與基體熱解耦。可如下設置:運輸環係由至少兩個單件組成,其中,下單件形成下部,上單件形成上部。前述縫隙係位於下部與上部之間,並且沿方位角方向在間隔件之間延伸。間隔件可由單接條形成,諸單接條係同質地對應於下部且/或同質地對應於上部。該等單件中之一者之每個單接條皆可對應於另一單件之一個凹部。在此情況下,該等單接條之自由端可分別接合到一個凹部中。單接條及凹部可藉由切削加工方法以製成。以製造技術角度看,若單接條與上部同質地形成,則特別有利。間隔件既可由上部形成,亦可由下部形成。Unlike the transport ring described in
根據本發明之用於在CVD反應器中進行處理期間承托基板的裝置,除了上述運輸環之外,更具有基板架。基板架形成包圍中央基座的支撐凸肩,而該中央基座係可支撐基板。運輸環可放置於基座上。在處理過程中,基板可以不放置在運輸環之放置面上。基板之邊緣區域在放置面上方延伸。然而,亦可如下設置:基板在處理過程中以其邊緣放置在放置面上。如此一來,基板既可放置在運輸環之放置面上,亦可放置在基板架之承載凸起上。運輸環具有徑向突出部,而抓取器之指部可伸到該突出部下方以抬升運輸環,其中,運輸環之放置面係自下方托持基板之徑向外側距離。The device according to the invention for supporting substrates during processing in a CVD reactor has, in addition to the above-mentioned transport ring, a substrate holder. The substrate holder forms a support shoulder surrounding a central base that supports the substrate. The transport ring can be placed on the base. During processing, the substrate may not be placed on the placement surface of the transport ring. The edge region of the substrate extends above the placement surface. However, it is also possible to provide that the substrate is placed with its edge on the placement surface during processing. In this way, the substrate can be placed either on the placing surface of the transport ring or on the bearing protrusion of the substrate holder. The transport ring has a radial protrusion, and the fingers of the gripper can extend under the protrusion to lift the transport ring, wherein the placing surface of the transport ring is a radially outer distance from below to hold the substrate.
本發明之CVD反應器係以數個上述裝置為其特徵,諸裝置可圍繞著位於製程室中心的氣體入口構件而呈環形佈置。氣體出口構件則可圍繞承載著基板承托裝置的圓盤形基板座而延伸。The CVD reactor of the present invention is characterized by several of the above-described devices, which may be arranged in a ring around a gas inlet member located in the center of the process chamber. The gas outlet member may then extend around the disc-shaped substrate holder carrying the substrate holder.
本發明進一步係關於一種製造方法,特別是前述運輸環之製造方法。其中,首先製造特別是旋轉對稱的一體式的環形基體,該基體具有可用來製造下部之區段,且該區段具有可用來製造上部之區段。在特別是以材料去除方式對坯件進行成形之後,製成設置在下部與上部之間的縫隙。此係可藉由直線工作的工具來完成。該縫隙可用鋸子鋸切而成,用雷射束製成,或者以拉緊的金屬絲進行電火花腐蝕而形成。在此過程中產生多邊形的切口,使得單接條具有前述之三角形平面輪廓。The present invention further relates to a manufacturing method, especially the manufacturing method of the aforementioned transport ring. In this case, firstly, a one-piece, in particular rotationally symmetrical, annular base body is produced, which has a section from which the lower part can be produced and which has a section which can be used for the production of the upper part. After forming the blank, in particular by material removal, the gap provided between the lower part and the upper part is produced. This can be done with tools that work in a straight line. The gap can be cut with a saw, made with a laser beam, or spark eroded with taut wire. In this process a polygonal cut is created, so that the single connection has the aforementioned triangular planar profile.
下面參照所附圖式闡述本發明之實施例。圖1粗略地且示意性地示出具有殼體29的CVD反應器,在該殼體中設有可被加熱裝置24加熱的基板座23,而該基板座係向下界定出製程室28,製程室頂部27則向上界定出該製程室。製程室28之中央設有氣體入口構件25,藉由該氣體入口構件,可將製程氣體送入製程室28。藉由加熱製程室28,且特別是藉由加熱基板座23所承載的數個基板架17,可將基板架17所承載的基板21加熱至製程溫度,使得,製程氣體熱解並且彼此發生化學反應,以在基板21之朝向製程室28的寬側表面上沉積出層。用於將製程氣體送入製程室28之載氣以及氣態反應產物係可經由包圍基板座23的氣體出口構件26以被移除。Embodiments of the present invention are described below with reference to the accompanying drawings. Fig. 1 shows roughly and schematically a CVD reactor with a
圖4至圖10以不同實施例所圖示之基板承托裝置具有基板架17,其具有實質上平直的底面18,該底面係可浮動地支撐在設於基板座23中之凹槽的底部。為此,在其凹槽中注入沖洗氣體以形成氣墊。基板承托裝置係被蓋板22所包圍,諸蓋板之朝向製程室28的頂面係與基板承托裝置之環形的頂面對齊。4 to 10 illustrate the substrate holding device in different embodiments having a
基板架17具有包圍基板架17之中心區域的台階32,運輸環1之底面8係靠在該台階上。基板架17之中心區域穿過運輸環1之環形的空腔,而該環形空腔係被運輸環之內壁12所包圍。例如略微彎曲的頂面19係在基板架17之向上朝向製程室的一側延伸,而在該頂面上可形成諸多承載凸起30,基板21之底面可放置在該等承載凸起上。基板21之徑向外緣區域可徑向向外突出於基板架17之中心區域。The
運輸環1係由至少一個上部3及下部2組成。下部2形成基體,而該基體係形成了放置在支撐凸肩32上的底面8,且形成了在基板21之徑向外緣下方延伸的放置面5。在製程室28中處理基板期間,放置面5可與基板21之底面間隔開。The
由運輸環1之下部2之外區段6所形成的徑向外側區域係徑向向外突出於基板架17。該徑向外側區域形成了著力面6',圖中未示出的抓取器之抓取指可伸到該著力面下方以抬升運輸環1。當運輸環1向上運動時,圓形的放置面5則接觸性貼靠著基板21之底面以抬起基板21,其前提是基板21之邊緣並非已放置在放置面5上。The radially outer region formed by the
運輸環1之上部3形成為外環3。外環3僅定點地(即,透過單接條7)連接下部2。如圖5所示,僅三個間隔件7分別以單接條之形式圍繞對稱軸線A周向均勻地分佈即已足夠。The
圖6示出一個變體,在該變體中共設有五個圍繞軸線A周向均勻分佈的單接條7。單接條7具有三角形平面輪廓,其中,長三角形邊15可與外環3之徑向的內側面9重合。外環3之內側面9係形成為一定心面,基板21之外緣則可支撐在該定心面上。FIG. 6 shows a variant in which there are a total of five single connecting
單接條7之三角形平面輪廓分別具有兩條等長的短三角形邊16。如下設置:短三角形邊16分別與相鄰的單接條7之短三角形邊16對齊。此節在圖5及圖6中以輔助線示出。為了在製造技術上實現此點,可透過鋸切、以拉緊的金屬絲進行電火花腐蝕、或藉由雷射束來產生兩個相鄰單接條7之間的間隙31。然而,亦可透過研磨或其他切削加工方法來產生該等間隙。間隔件7可佈置於運輸環之徑向內側,即,佈置於定心面9之區域內。間隔件7亦可佈置於運輸環之徑向外側。亦即,間隔件7既可為包圍放置面5的環形結構之徑向內周壁之區段,亦可為該環形結構之徑向外周壁之區段。The triangular plane outlines of the single connecting
間隙31圍繞軸線的方位角角可為單接條7延伸所覆蓋之方位角角的至少兩倍、三倍、四倍或五倍,其中,單接條7較佳係採用相同設計,並且以均勻的角度分佈圍繞軸線A佈置。藉由前述製造方法,可製造上部3與下部2之間的縫隙4,該縫隙具有兩個平行限制面4',其中,上限制面4'係由上部3所形成,下限制面4''則由下部2所形成。The azimuth angle of the
上部3之周面10'及下部2之周面10較佳係在相同的柱體外表面延伸。The peripheral surface 10' of the
兩個限制面4'、4''之間的距離D可在0.01 mm與2 mm之間,0.05 mm與2 mm之間,或者在0.5 mm與2 mm之間的範圍內。該距離可約為1 mm。長三角形邊15可在20 mm與30 mm之間的範圍內。單接條7之截面之三角形之高度可為7 mm。The distance D between the two limiting surfaces 4', 4'' may be in the range between 0.01 mm and 2 mm, between 0.05 mm and 2 mm, or between 0.5 mm and 2 mm. This distance may be approximately 1 mm. The long triangle sides 15 may be in the range between 20 mm and 30 mm. The height of the triangle of the cross-section of the single connecting
在圖4及圖5所示之實施例中,單獨一個外環3在下部2上方延伸。除單接條7之外,該外環係沿著整個周邊區域與下部2隔開距離D。In the embodiment shown in FIGS. 4 and 5 , a single
圖8示出運輸環1的一個變體,在該變體中,在最上面的外環3與下部2之間設有中間環11,該中間環係疊合地佈置在外環3下方。在運輸環1之頂面(由外環3之可見表面所形成,而該可見表面係與圖2所示之蓋板22之頂面對齊)與下部2(即,基體)之間現在則有兩個縫隙4,以軸線A觀之,該等縫隙係軸向地間隔開。FIG. 8 shows a variant of the
單接條7係在下部2與中間環11之間延伸,並且周向均勻地分佈。單接條7'在中間環11與上部3之間延伸,並且同樣為周向均勻地分佈。然而,它們與單接條7錯開一定角度,且特別是佈置在空隙上。因此,一個單接條7'大致位於兩個單接條7之間的中心位置。The single-
圖9所示之實施例與前述實施例之間的區別主要在於,外環3具有徑向的突出部14,並且以該突出部徑向地突出於基體2之周面10。在此實施例中,抓取器能以外環3為著力點。此處亦由單接條7所形成的間隔件可具有上述之三角形截面形狀。然而,單接條7亦可呈輻條形。The main difference between the embodiment shown in FIG. 9 and the previous embodiments is that the
在圖10所示之實施例中,運輸環1之兩個部分(即,下部2及上部3)係由可相互分離的物體所形成。下部2之外區段6形成朝上的平直表面,該平直表面則形成縫隙限制面4'。數個單接條7以凸起形式自此限制面4'沿軸線A之方向伸出。環形的上部3可插接於此等凸起上。為此,環形的上部3可具有多個凹部13,凸起之朝上的自由端係可接合到該等凹部中,從而實現位置固定。In the embodiment shown in Figure 10, the two parts of the transport ring 1 (ie the
在圖11所示之實施例中,運輸環1之下部2及上部3係為可相互分離之物體。不同於上述實施例,一個或數個單接條7現在並非自下部2伸出,而是自上部3伸出。單接條7係與上部3同質地形成。下部2在對應部位處具有諸多凹部13,單接條7之自由端可接合到該等凹部中,以便將上部3相對立於下部2以固定在其位置上。圖中所示的實施例係圖示了基板21被擱放在承載凸起30上之佈局。因此,在基板21之底面與基板架17之頂面19之間形成了空腔20。基板21之徑向外緣與放置面5的距離較小,因此,基板21之邊緣僅在運輸環1被抬升時會與放置面5接觸。在其他實施例中可如下設置:基板21之邊緣永久地放置在放置面5上。在此情況下,在頂面19與基板21之底面之間亦可形成一空腔。In the embodiment shown in FIG. 11 , the
承載凸起30亦可為可用來抬升基板21之活動的元件。The bearing
前述實施係用於說明本申請案整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,此等特徵組合中的兩個、數個或所有特徵組合亦可相互組合,即:The foregoing embodiments are used to illustrate the inventions contained in the present application as a whole, and these inventions independently constitute improvements over the prior art through at least the following feature combinations, wherein two, several or all of these feature combinations Combinations can also be combined with each other, namely:
一種裝置,其特徵在於:諸間隔件7、7'係由在圍繞軸線A之周向上彼此間隔開的單接條7、7'形成。A device characterized in that the
一種裝置,其特徵在於:諸單接條7、7'係圍繞軸線A周向均勻分佈,並且藉由方位角的間隙31彼此分開,在該間隙中,上部3在形成沿徑向兩側開放的縫隙4之情況下係在該下部2上方懸空延伸,並且/或者,在上部3與下部2之間延伸的縫隙4具有彼此平行延伸的限制面4'及4'',並且/或者,兩個單接條7、7'之間的方位角的間隙31之圓周角係較單接條7、7'所占的圓周角至少大三倍,或者至少大四倍或五倍。A device, characterized in that the
一種裝置,其特徵在於:諸單接條7、7'同質連接下部2及上部3,並且/或者,諸單接條7、7'之平面輪廓係呈三角形,並且/或者,平面輪廓呈三角形的諸單接條7、7'具有一條長三角形邊15及兩條短三角形邊16,而該長三角形邊係與由上部3所形成的定心面9重合,並且/或者,諸單接條7、7'之兩條短三角形邊16係相交於一點,而該點在徑向向內方向上係與下部2或上部3之周面10、10'間隔開,並且/或者,三角形的單接條7、7'具有兩條三角形邊16,該等三角形邊係分別與直接相鄰的單接條7、7'之一條三角形邊16對齊。A device, characterized in that: the single connecting
一種裝置,其特徵在於:一個或數個沿軸線A之方向彼此間隔開的環形物體3、11係彼此重疊,並且/或者,數個環形物體3、11係疊合地上下疊置並且藉由間隔件7、7'以彼此間隔開,並且/或者,該等間隔件7係同質地由上部3或下部2形成,並且/或者,同質地由上部3或下部2形成的間隔件7係分別接合到下部2或上部3之凹部13中,並且/或者,在環形的上部3與環形的下部2之間設有環形的中間環11,該中間環係透過諸多第一單接條7'以連接上部3,並且透過諸多第二單接條7以連接下部2,其中,該等第一單接條7'與該等第二單接條7係彼此錯開一定角度。A device characterized in that one or several
一種裝置,其特徵在於:下部2及一個或數個環形的上部3係由同一種材料或由不同材料製成,其中,該等材料為石墨、SiC、陶瓷材料、石英或金屬材料。A device characterized in that the
一種裝置,其特徵在於:運輸環1係根據前述五種裝置中任一種進行設計。A device characterized in that the
一種CVD反應器,具有:對外氣密的殼體29、在殼體29中設於製程室頂部27與基板座23之間的製程室28、用於將製程氣體送入製程室28的氣體入口構件25、用於排出氣態反應產物的氣體出口構件26、用於加熱基板座23的加熱裝置24、及至少一個如同前述第六個裝置之用於承托基板21的裝置。A CVD reactor comprising: a
一種製造裝置之方法,其特徵在於:首先,連同上部3一起製造出一體式的基體2,而該上部係與基體2同質地形成,而後,藉由材料去除方法,在上部3與基體2所形成的下部2之間製造縫隙4,使得縫隙4在剩餘的諸單接條7、7'之間而在徑向向內方向及徑向向外方向上皆為開放的。A method of manufacturing a device, characterized in that: first, an
一種方法,其特徵在於:縫隙4係藉由以拉緊的金屬絲進行電火花腐蝕或藉由雷射束而產生。A method, characterized in that the
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故,本申請案之揭露內容亦包含相關/所附優先權檔案(先前申請案副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請案之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一或數項。本發明亦有關於如下設計形式:前述說明中所述及之個別特徵不實現,特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。All disclosed features (either as a single feature or as a combination of features) are essential to the invention. Therefore, the disclosure content of this application also includes all the content disclosed in the related/attached priority files (copy of the previous application), and the features described in these files are also included in the scope of the patent application of this application. The subordinate items describe the features of the improvement scheme of the present invention with respect to the prior art with its features, and its purpose is mainly to file a divisional application on the basis of these claims. The invention given in each claim may further have one or more of the features given in the preceding description, in particular indicated by symbols and/or given in the description of symbols. The invention also relates to designs in which individual features mentioned in the preceding description are not implemented, in particular features which are not necessary for a specific application or which can be replaced by other technically equivalent components.
1:運輸環;(環形)本體 2:下部;基體 3:上部;外環;環形物體 4:縫隙 4':(上)限制面;(縫隙)限制面 4'':(下)限制面 5:放置面 6:(下部)外區段 6':著力面 7:間隔件;(第二)單接條 7':間隔件;(第一)單接條 8:(運輸環)底面 9:(徑向)內側面;定心面 10:(下部/基體)周面 10':(上部)周面 10'':(中間環)周面 11:中間環;環形物體 12:(運輸環)內壁 13:凹部 14:突出部 15:(長)三角形邊 16:(短)三角形邊 17:基板架 18:(基板架)底面 19:(基板架)頂面 20:空腔 21:基板 22:蓋板 23:基板座 24:加熱裝置 25:氣體入口構件 26:氣體出口構件 27:製程室頂部 28:製程室 29:殼體 30:承載凸起 31:(方位角)間隙 32:支撐凸肩;(基板架)台階 A:(對稱)軸線 A':(對稱)軸線 D:(限制面之間)距離 1: transport ring; (ring) body 2: lower part; base 3: upper part; outer ring; annular object 4: Gap 4': (upper) limit surface; (gap) limit surface 4'': (bottom) limit surface 5: Place the surface 6: (lower) outer section 6': focus face 7: spacer; (second) single connection 7': spacer; (first) single connection 8: (transport ring) bottom surface 9: (radial) inner surface; centering surface 10: (lower/substrate) peripheral surface 10': (upper) peripheral surface 10'': (intermediate ring) peripheral surface 11: Intermediate ring; annular object 12: (transport ring) inner wall 13: Recess 14: Protrusions 15: (long) triangle sides 16: (Short) Triangle Side 17: Substrate rack 18: (substrate frame) bottom surface 19: (substrate frame) top surface 20: cavity 21: Substrate 22: Cover 23: Substrate base 24: Heating device 25: Gas inlet member 26: Gas outlet components 27: The top of the process room 28: Process room 29: Shell 30: Bearing protrusion 31: (azimuth) clearance 32: support shoulder; (substrate frame) step A: (symmetric) axis A': (symmetric) axis D: (limit between faces) distance
圖1為CVD反應器之示意剖面圖。
圖2為按照圖1中II-II切割線以示出承載數個基板21之基板座23的俯視圖,其中,每個基板21皆由基板承托裝置所承載。
圖3為圖2中III部分之放大圖。
圖4為第一實施例之基板承托裝置沿圖3中IV-IV線所截取之剖面圖。
圖5為用以說明間隔件7之位置及平面輪廓的基板承托裝置之俯視圖,其中,輔助線條係用以圖示三角形邊16之走向。
圖6為另一實施例如圖5之視圖,其中,輔助線條在此亦表示三角形邊之走向。
圖7為圖6中VII部分之放大圖。
圖8為基板承托裝置之另一實施例之如圖4之視圖。
圖9為另一實施例之如圖4之視圖。
圖10為另一實施例之透視立體圖。
圖11為另一實施例之如圖10之透視立體圖。
FIG. 1 is a schematic cross-sectional view of a CVD reactor.
2 is a top view of the
1:運輸環;(環形)本體 1: transport ring; (ring) body
2:下部;基體 2: lower part; base
3:上部;外環;環形物體 3: upper part; outer ring; annular object
4:縫隙 4: Gap
4':(上)限制面;(縫隙)限制面 4': (upper) limit surface; (gap) limit surface
4":(下)限制面 4": (bottom) limit surface
5:放置面 5: Place the surface
6:(下部)外區段 6: (lower) outer section
6':著力面 6': focus face
7:間隔件;(第二)單接條 7: spacer; (second) single connection
8:(運輸環)底面 8: (transport ring) bottom surface
9:(徑向)內側面;定心面 9: (radial) inner surface; centering surface
10:(下部/基體)周面 10: (lower/substrate) peripheral surface
10':(上部)周面 10': (upper) peripheral surface
12:(運輸環)內壁 12: (transport ring) inner wall
17:基板架 17: Substrate rack
18:(基板架)底面 18: (substrate frame) bottom surface
19:(基板架)頂面 19: (substrate frame) top surface
20:空腔 20: cavity
21:基板 21: Substrate
30:承載凸起 30: Bearing protrusion
32:支撐凸肩;(基板架)台階 32: support shoulder; (substrate frame) step
A:(對稱)軸線 A: (symmetric) axis
D:(限制面之間)距離 D: (limit between faces) distance
Claims (18)
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DE102020117645.7A DE102020117645A1 (en) | 2020-07-03 | 2020-07-03 | Transport ring for a CVD reactor |
DE102020117645.7 | 2020-07-03 |
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TW202213616A true TW202213616A (en) | 2022-04-01 |
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TW110123925A TW202213616A (en) | 2020-07-03 | 2021-06-30 | Transport ring for a CVD reactor |
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DE (1) | DE102020117645A1 (en) |
TW (1) | TW202213616A (en) |
WO (1) | WO2022002848A2 (en) |
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DE102021126019A1 (en) | 2021-10-07 | 2023-04-13 | Aixtron Se | CVD reactor with a support ring or support ring for a substrate |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5421401A (en) * | 1994-01-25 | 1995-06-06 | Applied Materials, Inc. | Compound clamp ring for semiconductor wafers |
DE10135151A1 (en) | 2001-05-29 | 2002-12-05 | Aixtron Ag | Arrangement consisting of a supporting body and a gas-bearing and rotary driven substrate holder |
DE10323085A1 (en) | 2003-05-22 | 2004-12-09 | Aixtron Ag | CVD coater |
DE102012106796A1 (en) | 2012-07-26 | 2014-01-30 | Aixtron Se | Device useful for thermal treatment of a semiconductor substrate, comprises susceptor, which forms the base of a process chamber and comprises substrate support base, substrate support ring and heat source |
KR102528559B1 (en) | 2016-07-26 | 2023-05-04 | 삼성전자주식회사 | Apparatus for manufacturing a large size substrate |
US20180138074A1 (en) | 2016-11-11 | 2018-05-17 | Samsung Electronics Co., Ltd. | Carrier ring and chemical vapor deposition apparatus including the same |
CN110536976B (en) * | 2017-01-27 | 2022-03-15 | 艾克斯特朗欧洲公司 | Transport ring |
DE102017101648A1 (en) | 2017-01-27 | 2018-08-02 | Aixtron Se | transport ring |
US20180334746A1 (en) * | 2017-05-22 | 2018-11-22 | Lam Research Corporation | Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch |
DE102017129699A1 (en) | 2017-12-13 | 2019-06-13 | Aixtron Se | Device for holding and transporting a substrate |
DE102018113400A1 (en) | 2018-06-06 | 2019-12-12 | Aixtron Se | CVD reactor with support ring for substrate handling |
DE102019114249A1 (en) | 2018-06-19 | 2019-12-19 | Aixtron Se | Arrangement for measuring the surface temperature of a susceptor in a CVD reactor |
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2020
- 2020-07-03 DE DE102020117645.7A patent/DE102020117645A1/en active Pending
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2021
- 2021-06-28 WO PCT/EP2021/067689 patent/WO2022002848A2/en active Application Filing
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DE102020117645A1 (en) | 2022-01-05 |
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