DE10135151A1 - Arrangement consisting of a supporting body and a gas-bearing and rotary driven substrate holder - Google Patents
Arrangement consisting of a supporting body and a gas-bearing and rotary driven substrate holderInfo
- Publication number
- DE10135151A1 DE10135151A1 DE10135151A DE10135151A DE10135151A1 DE 10135151 A1 DE10135151 A1 DE 10135151A1 DE 10135151 A DE10135151 A DE 10135151A DE 10135151 A DE10135151 A DE 10135151A DE 10135151 A1 DE10135151 A1 DE 10135151A1
- Authority
- DE
- Germany
- Prior art keywords
- ring
- substrate holder
- arrangement according
- gas
- particular according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67784—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations using air tracks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Die Erfindung betrifft eine aus einem Tragkörper und darauf gasgelagerten und drehangetriebenen Substrathal ter bestehende Anordnung, wobei die Gaslagerung und der Drehantrieb mittels in die Trennfuge zwischen Tragkör per und Substrat aus Düsen einströmendes Gas gebildet sind.The invention relates to a from a support body and thereupon gas-supported and rotating driven substrate neck ter existing arrangement, the gas storage and the Rotary drive by means of the joint between the supporting body per and substrate gas flowing from nozzles formed are.
Eine derartige Anordnung ist aus dem US-Patent 4,860,687 vorbekannt. Dort besteht der Tragkörper aus einer Platte, aus welcher ein Zentrierstift ragt. Um den Zentrierstift sind spiralartig Nuten angeordnet, in welche Düsen münden, durch welche ein Gas in die bogen förmigen Nuten eintritt. Auf dem Zapfen liegt eine kreisscheibenförmige Platte, die von den aus den Düsen austretenden Gasströmen gasgelagert ist. Die in die Bogen-Nuten umgelenkten Gasströme nehmen die Platte in Strömungsrichtung mit, so dass ein viskoser Drehantrieb erzeugt wird.Such an arrangement is from the US patent 4,860,687 previously known. There the support body consists of a plate from which a centering pin protrudes. Around the centering pin are spirally arranged in which nozzles open, through which a gas into the bent shaped grooves occurs. There is one on the spigot circular disk-shaped plate by the out of the nozzles escaping gas flows is stored in gas. The in the Arc grooves deflected gas flows take the plate in Flow direction with, so that a viscous rotary drive is produced.
Der Substrathalter und die darauf aufliegende Platte werden von unten bspw. mittels Hochfrequenz beheizt.The substrate holder and the plate resting on it are heated from below, for example by means of high frequency.
Der Erfindung liegt die Aufgabe zugrunde, eine Vorrich tung anzugeben, mittels derer eine schnelle Wärmebehand lung eines auf einem Substrathalter aufliegenden Sub strates möglich ist.The invention has for its object a Vorrich specify by means of which a quick heat treatment development of a sub resting on a substrate holder strates is possible.
Diese Aufgabe ist zunächst und im Wesentlichen vom Gegenstand des Anspruches 1 gelöst, in welchem darauf abgestellt ist, dass der Tragkörper und der Substrathal ter als Ringe ausgebildet sind. Die in den weiteren Ansprüchen angegebenen Gegenstände betreffen sowohl vorteilhafte Weiterbildungen zum Gegenstand des Anspru ches 1 als auch gleichzeitig davon und von der oben genannten Aufgabenstellung unabhängige, eigenständige technische Lösungsvorschläge. Es wird dabei darauf abgestellt, dass die Ringe selbstzentrierend aufeinan derliegen. Der eine Ring kann hierzu einen in eine Ringaussparung des anderen Ringes eingreifenden Ring wulst aufweisen. Der Ringwulst kann als Keil ausgebil det sein, der in einer entsprechende Gegenkeilfläche des anderen Ringes eingreift. Das Substrat liegt jetzt nur mit seinem Rand auf dem Rand des drehangetriebenen Ringes. Es sind keine weiteren Zentner- oder Lager hilfsmittel erforderlich. Insbesondere ist der Ort, an welchem sich die gedachte Drehachse befindet frei. Dies bedeutet, dass das auf dem rotierenden Ring aufliegende Substrat von unten durch den Ring bspw. mittels infraro ter Strahlung beheizt werden kann. Gleichzeitig kann von oben her eine Bestrahlung des Substrates erfolgen, so dass die Homogenität der Wärmebeaufschlagung verbes sert ist. Die Düsen münden wie beim Stand der Technik an sich bekannt in Nuten, insbesondere Bogennuten. Anders als beim Stand der Technik sind die Bogennuten jedoch auch so gestaltet, dass sich entgegengesetzte Strömungen ausbilden können. Dadurch kann der drehange triebene Ring in unterschiedliche Drehrichtungen ge dreht werden. Er kann aber auch durch Gegenstrom ge bremst werden. Die Bremsung erfolgt dann ausschließlich über das Gaspolster, welches thermisch-isolierend zwi schen den beiden Ringen wirkt. Dies führt zu einem thermisch isolierten Stillstand des drehantreibbaren Ringes. Die Abbremsung in den Stillstand erfolgt ebenso wie der Drehantrieb partikelfrei, das heißt ohne eine Festkörperreibung. Die Ringe können aus Quarz oder aus Keramik bestehen. Insbesondere der untere Ring besteht aus diesem Material. Die erfindungsgemäße Anordnung ist insbesondere Teil einer Vorrichtung zum thermischen Behandeln von Halbleiterscheiben während des Produkti onsprozesses für Halbleiterbauelemente. Insbesondere dient die Anordnung dazu, ein kreisscheibenförmiges Substrat randunterfasst zu lagern, die Lagerung soll dabei möglichst thermisch-isoliert vom restlichen Teil der Vorrichtung erfolgen. Erfindungsgemäß lassen sich diese Vorgaben damit erfüllen. Zudem ist durch die Rotation sichergestellt, dass die thermische Behandlung rotationssymmetrisch homogen erfolgt. Damit ist auch bei einer großen Skalierung eine große Homogenität gewährleistet. In einer Weiterbildung der Erfindung kann vorgesehen sein, dass der Rand des Substrates lediglich auf nadelförmigen Spitzen des drehangetriebe nen Ringes aufliegt. Damit ist die Wärmeabfuhr oder die Wärmezufuhr vom oder zum Substrat im Wege der Wärmelei tung durch Oberflächenkontakt minimiert. Auch dies fördert die Homogenität der thermischen Behandlung.This task is first and foremost of Subject of claim 1 solved, in which thereon is turned off that the support body and the substrate neck ter are formed as rings. The others Items specified in claims concern both advantageous developments on the subject of the claim ches 1 as well as simultaneously and from the above mentioned task independent, independent technical solutions. It will be on it turned off that the rings are self-centering on each other derliegen. One ring can do this in one Ring recess of the other ring engaging ring have bead. The ring bead can be formed as a wedge be in a corresponding mating wedge surface engages the other ring. The substrate is now only with its edge on the edge of the rotary Ring. There are no more hundredweight camps tools required. In particular, the place is at which the imaginary axis of rotation is free. This means that it rests on the rotating ring Substrate from below through the ring, for example using infrared ter radiation can be heated. At the same time the substrate is irradiated from above, so that the homogeneity of heat exposure is better sert is. The nozzles open out as in the prior art known per se in grooves, in particular curved grooves. The arch grooves are different from the prior art but also designed so that opposing ones Can develop currents. This allows the rotating rod driven ring in different directions of rotation be rotated. But it can also by countercurrent ge be slowed down. The braking then takes place exclusively over the gas cushion, which is thermally insulating between between the two rings. This leads to one thermally insulated standstill of the rotary drive Ring. The braking to a standstill also takes place like the rotary drive particle-free, that is without one Solid friction. The rings can be made of quartz or Ceramics exist. In particular, the lower ring is made from this material. The arrangement according to the invention is in particular part of a device for thermal Treating semiconductor wafers during production on process for semiconductor devices. In particular the arrangement serves to be a circular disc To store substrate framed, the storage should Thereby thermally insulated from the rest of the part the device. According to the invention thus meet these requirements. In addition, the Rotation ensures that the thermal treatment rotationally symmetrical homogeneous. That is also with a large scaling a great homogeneity guaranteed. In a further development of the invention can be provided that the edge of the substrate only on needle-shaped tips of the rotary gear NEN ring rests. So that is the heat dissipation or Heat supply from or to the substrate by means of heat minimized by surface contact. This too promotes the homogeneity of the thermal treatment.
Ein Ausführungsbeispiel der Erfindung wird nachfolgend anhand beigefügter Zeichnungen erläutert. Es zeigen:An embodiment of the invention is as follows explained with the accompanying drawings. Show it:
Fig. 1 die Anordnung in der Draufsicht, Fig. 1 shows the arrangement in plan view,
Fig. 2 einen Schnitt gemäß der Linie II-II in Fig. 1, Fig. 2 shows a section according to line II-II in Fig. 1,
Fig. 3 eine Ausschnittsvergrößerung des statischen Ringes im Bereich III in Fig. 1, Fig. 3 shows an enlarged detail of the static ring in the area III in Fig. 1,
Fig. 4 eine Darstellung gemäß Fig. 2 einer zweiten Ausführungsform, Fig. 4 is a representation according to FIG. 2 of a second embodiment,
Fig. 5 eine Darstellung gemäß Fig. 2 einer dritten Ausführungsform, Fig. 5 is a view according to Fig. 2 of a third embodiment,
Fig. 6 eine Draufsicht auf den drehangetriebenen Ring ohne daraufliegendes Substrat eines weiteren Ausführungsbeispiels und Fig. 6 is a plan view of the rotationally driven ring without a substrate of another embodiment lying thereon
Fig. 7 einen Schnitt gemäß der Linie VII-VII in Fig. 6. Fig. 7 shows a section according to line VII-VII in Fig. 6.
Die Anordnung, die in den Figuren schematisch darge stellt ist, ist Teil einer Vorrichtung zum thermischen Behandeln von Halbleiter-Wafern. Diese Behandlung kann unter einer Inertgasatmosphäre stattfinden. Dazu wird der Wafer 3, der als Substrat zu bezeichnen ist, von oben mittels Lampen beheizt. Das von den Lampen ausge hende infrarote Licht 6 beheizt die Substratoberseite. Von unten wird das Substrat ebenfalls mittels Lampen beheizt. Das von diesen Lampen ausgehende infrarote Licht 5 beheizt das Substrat 3 von unten.The arrangement, which is shown schematically in the figures, is part of a device for the thermal treatment of semiconductor wafers. This treatment can take place under an inert gas atmosphere. For this purpose, the wafer 3 , which is to be called the substrate, is heated from above by means of lamps. The infrared light 6 starting from the lamps heats the top of the substrate. The substrate is also heated from below by means of lamps. The infrared light 5 emanating from these lamps heats the substrate 3 from below.
Die Anordnung besitzt einen stationären Ring 1, der aus Quarz oder aus Keramik gefertigt werden kann. Auf dem stationären Ring 1 liegt ein drehangetriebener Ring 2. Beide Ringe sind etwa gleich groß.The arrangement has a stationary ring 1 , which can be made of quartz or ceramic. On the stationary ring 1 there is a rotary driven ring 2 . Both rings are approximately the same size.
Auf dem drehangetriebenen Ring 2 liegt mit seinem Rand das Substrat 3 auf. Das Substrat 3 liegt demzufolge hohl auf dem Substrathalter 2.The substrate 3 rests on the rotary driven ring 2 with its edge. The substrate 3 accordingly lies hollow on the substrate holder 2 .
Die Trennebene, die sich zwischen dem stationären Ring 1 und dem rotierenden Ring 2 befindet bildet einen Ringwulst aus. Dieser Ringwulst ist bevorzugt dem sta tionären Ring 1 zugeordnet. Der Ringwulst ragt in eine entsprechend negative Ringaussparung des rotierenden Ringes 2 ein, so dass eine formschlüssige Zentrierung der beiden Ringe aufeinander gewährleistet ist. The parting plane, which is located between the stationary ring 1 and the rotating ring 2 , forms an annular bead. This ring bead is preferably assigned to the sta tionary ring 1 . The ring bead protrudes into a correspondingly negative ring recess in the rotating ring 2 , so that a form-fitting centering of the two rings on one another is ensured.
Bei dem in Fig. 4 dargestellten Ausführungsbeispiel besitzt der Ringwulst eine Dachform. Die entsprechende Nut besitzt eine Kerbform.In the embodiment shown in Fig. 4, the annular bead has a roof shape. The corresponding groove has a notch shape.
Bei dem in Fig. 5 dargestellten Ausführungsbeispiel besitzt der Wulst wie auch bei dem in Fig. 2 dargestell ten Ausführungsbeispiel im Querschnitt eine Bogenform. Wegen der thermischen Expansion des rotierenden Ringes 2 ist die dem Wulst zugeordnete Nut des Ringes 2 radial einwärts versetzt angeordnet.In the embodiment shown in FIG. 5, the bead has an arc shape in cross section, as in the embodiment shown in FIG. 2. Because of the thermal expansion of the rotating ring 2 , the groove of the ring 2 assigned to the bead is arranged offset radially inwards.
In dem stationären Ring 1 befinden sich Gaszuleitungen 8, die in Düsen 11 bzw. 12 münden. Die Düsen 11 bzw. 12 münden im Bereich der Trennebene zwischen den beiden Ringen 1, 2. Zufolge des aus den Düsen 11, 12 austreten den Gases bildet sich zwischen den beiden Ringen 1, 2 ein Spalt 7 aus. Dieser Spalt 7 bildet ein Gaslager für den rotierenden Ring 1.In the stationary ring 1 there are gas supply lines 8 which open into nozzles 11 and 12 , respectively. The nozzles 11 and 12 open in the area of the parting plane between the two rings 1 , 2 . As a result of the gas emerging from the nozzles 11 , 12 , a gap 7 is formed between the two rings 1 , 2 . This gap 7 forms a gas bearing for the rotating ring 1 .
Wie insbesondere aus der Fig. 3 zu entnehmen ist, mün den die Düsen 11, 12 in Bogennuten 9, 10. Diese Bogennu ten 9, 10 geben dem aus den Düsen 11, 12 mündenden Gas eine Vorzugs-Strömungsrichtung in Richtung des Nuten verlaufes. Die beiden Strömungsrichtungen in den in Fig. 3 dargestellte Nuten 10 und 11 sind entgegenge setzt gerichtet. Zufolge einer viskosen Ankopplung des Gasstroms, welcher durch die Nuten 10, 11 strömt, wird der rotierende Ring 2 drehmitgenommen.As can be seen in particular from FIG. 3, the nozzles 11 , 12 in arc grooves 9 , 10 . This Bogennu ten 9 , 10 give the gas emanating from the nozzles 11 , 12 a preferred flow direction in the direction of the grooves. The two flow directions in the grooves 10 and 11 shown in FIG. 3 are directed in opposite directions. As a result of a viscous coupling of the gas flow which flows through the grooves 10 , 11 , the rotating ring 2 is rotated.
Es sind jeweils eine Vielzahl von Bogennuten 9, 10 vorgesehen, wobei sich die Nuten 9, 10 in Ringumfas sungsrichtung gleichverteilt abwechseln. Fließt nur durch die Nuten 9 ein Gasstrom, so wird der rotierende Ring im Uhrzeigersinn mitgeschleppt. Fließt dagegen nur durch die Bogennuten 10 ein Gasstrom, so wird der rotie rende Ring 2 im Gegenuhrzeigersinn mitgenommen. Durch Wechsel der Strömungsrichtung kann ein in Drehung ver setzter Ring 1 gebremst werden. Wird durch beide Düsen 11, 12 ein Gasstrom in die jeweiligen Nuten 9, 10 einge leitet, so heben sich die beiden Drehmomente auf. Da durch ist das Gaslager auch ohne Drehung betreibbar.A plurality of arc grooves 9 , 10 are provided, the grooves 9 , 10 alternating solution distribution in the Ringumfas alternate. If a gas flow only flows through the grooves 9 , the rotating ring is dragged along in a clockwise direction. In contrast, flows only through the arc grooves 10, a gas stream, the rotating ring 2 is taken counterclockwise. By changing the direction of flow, a ring 1 set in rotation can be braked. If a gas flow is introduced into the respective grooves 9 , 10 through both nozzles 11 , 12 , the two torques cancel each other out. As a result, the gas bearing can also be operated without rotation.
Der Drehantrieb und die Abbremsung des Ringes 2 erfolgt thermisch isoliert zum Ring 1. In der abgebremsten Stellung ist durch eine Balancierung der beiden Gasströ me ein thermisch isolierter Stillstand erzielbar.The rotary drive and the braking of ring 2 is thermally insulated from ring 1 . In the braked position, a thermally insulated standstill can be achieved by balancing the two gas flows.
Als Material für den drehangetriebenen Ring 2 kommt bevorzugt ein solchen in Betracht, welches eine gering Wärmeabsorption besitzt. Insbesondere wird ein solches Material verwendet, welches eine geringe Infrarot-Ab sorption besitzt.As material for the rotationally driven ring 2 , preference is given to one which has low heat absorption. In particular, such a material is used, which has a low infrared absorption.
In der in den Fig. 6 und 7 dargestellten Variante liegt das Substrat 3 lediglich auf drei nadelförmigen Fortsätzen 13 auf, die dem drehangetriebenen Ring 2 zugeordnet sind. Dadurch ist der Flächenkontakt zwi schen Substrat 3 und drehangetriebenen Ring 2 mini miert. Dies führt zu einer weiteren Verbesserung der thermisch isolierten Lagerung des Substrates 3.In the variant shown in FIGS. 6 and 7, the substrate 3 rests only on three needle-shaped extensions 13 , which are assigned to the rotary driven ring 2 . As a result, the surface contact between the substrate 3 and rotating ring 2 is minimized. This leads to a further improvement in the thermally insulated mounting of the substrate 3 .
Alle offenbarten Merkmale sind (für sich) erfindungswe sentlich. In die Offenbarung der Anmeldung wird hiermit auch der Offenbarungsinhalt der zugehörigen/beigefügten Prioritätsunterlagen (Abschrift der Voranmeldung) voll inhaltlich mit einbezogen, auch zu dem Zweck, Merkmale dieser Unterlagen in Ansprüche vorliegender Anmeldung mit aufzunehmen.All features disclosed are (by themselves) fiction sentlich. In the disclosure of the registration is hereby also the disclosure content of the associated / attached Priority documents (copy of pre-registration) full included in content, also for the purpose of characteristics of these documents in claims of the present application to include.
Claims (13)
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10135151A DE10135151A1 (en) | 2001-05-29 | 2001-07-19 | Arrangement consisting of a supporting body and a gas-bearing and rotary driven substrate holder |
PCT/EP2002/004406 WO2002097867A1 (en) | 2001-05-29 | 2002-04-22 | Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive |
EP02740493A EP1397827B1 (en) | 2001-05-29 | 2002-04-22 | Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive |
DE50212020T DE50212020D1 (en) | 2001-05-29 | 2002-04-22 | ARRANGEMENT COMPRISING A CARRIER BODY AND THEREFORE GAS-SUPPORTED AND TRANSMITTED SUBSTRATE HOLDER |
KR10-2003-7015102A KR20040007581A (en) | 2001-05-29 | 2002-04-22 | Arrangement comprising a support body with a substrate holder mounted thereon on a gas bearing with rotating drive |
JP2003500954A JP2004528721A (en) | 2001-05-29 | 2002-04-22 | Apparatus composed of a support and a substrate holder that is gas-supported thereon and is driven to rotate |
TW091109445A TW524732B (en) | 2001-05-29 | 2002-05-07 | Support body with a substrate holder mounted on a rotating drive |
US10/722,848 US7282096B2 (en) | 2001-05-29 | 2003-11-26 | Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10126274 | 2001-05-29 | ||
DE10135151A DE10135151A1 (en) | 2001-05-29 | 2001-07-19 | Arrangement consisting of a supporting body and a gas-bearing and rotary driven substrate holder |
Publications (1)
Publication Number | Publication Date |
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DE10135151A1 true DE10135151A1 (en) | 2002-12-05 |
Family
ID=7686608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE10135151A Withdrawn DE10135151A1 (en) | 2001-05-29 | 2001-07-19 | Arrangement consisting of a supporting body and a gas-bearing and rotary driven substrate holder |
Country Status (2)
Country | Link |
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KR (1) | KR20040007581A (en) |
DE (1) | DE10135151A1 (en) |
Cited By (5)
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DE102005055252A1 (en) * | 2005-11-19 | 2007-05-24 | Aixtron Ag | CVD reactor with slide-mounted susceptor holder |
CN110788926A (en) * | 2019-12-04 | 2020-02-14 | 徐州飞梦电子科技有限公司 | Repeated-engraving positioning and punching device for irregular shell of electronic product |
DE102020117645A1 (en) | 2020-07-03 | 2022-01-05 | Aixtron Se | Transport ring for a CVD reactor |
DE102020122198A1 (en) | 2020-08-25 | 2022-03-03 | Aixtron Se | Substrate holder for a CVD reactor |
WO2023057542A1 (en) | 2021-10-07 | 2023-04-13 | Aixtron Se | Cvd reactor with a supporting ring, and supporting ring for a substrate |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100621220B1 (en) * | 2004-12-28 | 2006-09-13 | 동부일렉트로닉스 주식회사 | Apparatus for reducing friction of racer using gas |
-
2001
- 2001-07-19 DE DE10135151A patent/DE10135151A1/en not_active Withdrawn
-
2002
- 2002-04-22 KR KR10-2003-7015102A patent/KR20040007581A/en not_active Application Discontinuation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005055252A1 (en) * | 2005-11-19 | 2007-05-24 | Aixtron Ag | CVD reactor with slide-mounted susceptor holder |
CN110788926A (en) * | 2019-12-04 | 2020-02-14 | 徐州飞梦电子科技有限公司 | Repeated-engraving positioning and punching device for irregular shell of electronic product |
CN110788926B (en) * | 2019-12-04 | 2021-07-02 | 徐州飞梦电子科技有限公司 | Repeated-engraving positioning and punching device for irregular shell of electronic product |
DE102020117645A1 (en) | 2020-07-03 | 2022-01-05 | Aixtron Se | Transport ring for a CVD reactor |
DE102020122198A1 (en) | 2020-08-25 | 2022-03-03 | Aixtron Se | Substrate holder for a CVD reactor |
WO2023057542A1 (en) | 2021-10-07 | 2023-04-13 | Aixtron Se | Cvd reactor with a supporting ring, and supporting ring for a substrate |
DE102021126019A1 (en) | 2021-10-07 | 2023-04-13 | Aixtron Se | CVD reactor with a support ring or support ring for a substrate |
Also Published As
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KR20040007581A (en) | 2004-01-24 |
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