TW202117060A - Flat component that can be used in a CVD reactor - Google Patents
Flat component that can be used in a CVD reactor Download PDFInfo
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- TW202117060A TW202117060A TW109121688A TW109121688A TW202117060A TW 202117060 A TW202117060 A TW 202117060A TW 109121688 A TW109121688 A TW 109121688A TW 109121688 A TW109121688 A TW 109121688A TW 202117060 A TW202117060 A TW 202117060A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45508—Radial flow
Abstract
Description
本發明係有關於一種可在CVD反應器中用作為頂板的扁平組件,具有可朝向第一個製程室的第一寬側以及背對第一寬側的第二寬側,其中,此組件具有內區域以及與該內區域間隔開的外區域。第二寬側具有一個或數個由固定元件所形成的固定凸肩。諸固定元件可被保持元件之保持凸肩托持,以便將此頂板緊固於製程室中的基板座上方。The present invention relates to a flat component that can be used as a top plate in a CVD reactor, having a first wide side facing the first process chamber and a second wide side facing away from the first wide side, wherein the component has The inner area and the outer area spaced from the inner area. The second wide side has one or more fixing shoulders formed by fixing elements. The fixing elements can be held by the holding shoulders of the holding elements, so as to fasten the top plate above the substrate holder in the process chamber.
本發明還有關於一種設有此種頂板的CVD反應器,用於對基板進行熱處理,且特別是用於在基板上沉積出層,其中,此CVD反應器特別是MOCVD反應器。本發明還有關於一種在此種CVD反應器中安裝或拆卸頂板的方法。本發明還有關於一種可在CVD反應器中用作為頂板的扁平組件之製造方法,以及此扁平組件在CVD反應器中用作為頂板之用途。The present invention also relates to a CVD reactor provided with such a top plate for heat treatment of a substrate, and particularly for depositing a layer on the substrate, wherein the CVD reactor is particularly a MOCVD reactor. The present invention also relates to a method for installing or removing the top plate in such a CVD reactor. The present invention also relates to a method for manufacturing a flat component that can be used as a top plate in a CVD reactor, and the use of the flat component as a top plate in a CVD reactor.
US 10,418,264 B2描述一種具有頂板的CVD反應器,其頂板具有兩個彼此背對的寬側表面。在寬側表面上設有諸多開口。此等開口中插設有作為嵌件之固定元件。諸固定元件具有可被保持元件托持的底切的區域。US 10,418,264 B2 describes a CVD reactor with a top plate, which has two wide side surfaces facing away from each other. There are many openings on the wide side surface. Fixing elements as inserts are inserted in these openings. The fixing elements have undercut areas that can be held by the holding elements.
WO 2014/064179描述一種CVD反應器之頂板,佈置於氣體入口構件之排氣面下方,而該氣體入口構件係呈蓮蓬頭形。此頂板具有中央區域及鄰接該中央區域的外區域。中央區域覆蓋基板座,待熱處理的基板則係平放於基板座上。以頂板之中心為參照,外區域係沿徑向向外方向突出於基板座之徑向外緣。在此一外區域中設有具有固定凸肩的固定元件,而諸固定凸肩係被保持元件之保持凸肩托持。其中,保持元件之各自形成一個保持凸肩的末端部分係穿過頂板之最外部的邊緣之窗口,以便托持頂板。WO 2014/064179 describes a top plate of a CVD reactor, which is arranged below the exhaust surface of a gas inlet member, and the gas inlet member is in the shape of a shower head. The top plate has a central area and an outer area adjacent to the central area. The central area covers the substrate holder, and the substrate to be heat-treated is placed flat on the substrate holder. Taking the center of the top plate as a reference, the outer area protrudes from the radial outer edge of the base plate holder in a radially outward direction. A fixing element with fixing shoulders is provided in this outer area, and the fixing shoulders are held by the holding shoulders of the holding element. Wherein, the end portions of the holding elements each forming a holding shoulder pass through the window of the outermost edge of the top plate so as to support the top plate.
EP 2 741 316 B1及EP 2 741 371 A1分別描述一種具有製程室頂部的CVD反應器,其底部係由基板座形成,其頂部則由扁平組件形成。扁平組件係支撐在諸多支撐凸肩上,而該等支撐凸肩係佈置於CVD反應器殼體之內腔之徑向外部的區域中。
US 2004/0005731 A1描述一種具有氣體入口構件的CVD反應器,其氣體入口構件係佈置於製程室之中央,用於將製程氣體導入製程室中,而製程室之頂部係由數個相互支撐的扁平組件所形成。US 2004/0005731 A1 describes a CVD reactor with a gas inlet member. The gas inlet member is arranged in the center of the process chamber for introducing process gas into the process chamber, and the top of the process chamber is supported by several mutually supporting Formed by flat components.
WO 99/43874 A1描述一種CVD反應器,其製程室具有扁平的頂板,該頂板係呈圓盤形,具有中央的開口,而由中央的氣體入口構件所承載。WO 99/43874 A1 describes a CVD reactor whose process chamber has a flat top plate. The top plate is in the shape of a disk with a central opening and is carried by a central gas inlet member.
此外,US 5,855,679及US 6,036,782亦屬於先前技術,其描述了固定元件,藉由諸固定元件,可將頂板固定於CVD反應器之上部的區域。In addition, US 5,855,679 and US 6,036,782 also belong to the prior art, which describe fixing elements by which the top plate can be fixed to the upper area of the CVD reactor.
本發明之目的在於對頂板、CVD反應器、頂板之製造方法以及頂板在CVD反應器中的安裝方法,進行有利於使用的改良。The purpose of the present invention is to improve the top plate, the CVD reactor, the method of manufacturing the top plate, and the installation method of the top plate in the CVD reactor, which is beneficial to use.
其目的係藉由申請專利範圍中所提供的發明而達成,其中,附屬項不僅構成並列請求項之有利改良方案,亦構成該目的之獨立解決方案。Its purpose is achieved by the invention provided in the scope of the patent application, in which the appendix not only constitutes a beneficial improvement plan for the parallel claims, but also constitutes an independent solution to the purpose.
本發明首先且實質上係關於扁平組件之改良,此扁平組件在CVD反應器中可用於或用作為頂板。此頂板具有兩個相背對的寬側。此等寬側較佳為平行延伸的平坦表面,其中,該等寬側中之一者係朝向製程室,第二個寬側則背對製程室。背對製程室的第二寬側具有諸多固定元件,藉由該等固定元件,可將此頂板固定在反應器殼體上。本發明提出:設有至少一個固定元件。較佳係設有數個固定元件。可設置數個佈置於圍繞一中心的圓弧線上的固定元件,其中,該中心係位於扁平組件之環形的開口中。固定元件具有固定凸肩。在第一變體中,本發明提出:僅可從扁平組件之第二寬側表面抵達固定元件。固定元件可為背向第二寬側的突起。然而,固定元件亦可為凹槽。其中,其凹槽具有最大的深度延伸,該深度延伸係小於扁平組件之材料厚度,亦即,小於較佳地由相互平行延伸的平面所形成的兩個相背對的寬側之間距。根據本發明,形成朝向製程室而連續不間斷的第一寬側。在第二寬側表面具有固定元件之處,相對立設置的第一寬側表面係不間斷地連續延伸。如此一來,形成固定元件的凹槽之底部與第一寬側表面之間被扁平組件之體積部分所隔開。凹槽由此具有閉合的底部表面。扁平組件之朝向製程室的表面較佳係沿其整個表面延伸皆為光滑或均勻結構化。該表面可呈現具有中央開口的環形。此外,該表面較佳係在朝向製程室的寬側上不具有開口。在本發明之第二變體(可與本發明之第一變體結合)中,如下設置:固定元件係在頂板裝入CVD反應器內之狀態下,佈置於基板之豎向上方,而基板係佈置在特別是由基板座所形成的製程室底部表面上。特別是如下設置:扁平組件具有內區域及外區域,其中,內區域比外區域更靠近中心。可如下設置:頂板之中心由中央的開口所形成,在裝入CVD反應器內之狀態下,氣體入口構件穿過該中央的開口。特別是如下設置:固定元件相較於外區域之外緣,係更靠近此開口之邊緣。特別是如下設置:固定元件與開口之邊緣係直接相鄰。開口之邊緣可在圓弧線上延伸。其圓弧線之中心可為此扁平組件之對稱中心,而此扁平組件之外緣同樣可在圓弧線上延伸。在本發明之進一步方案中提出:固定凸肩係由孔、凹口或凹槽之底切部所形成。該孔可為盲孔。固定凸肩亦可由突起、特別是肋條之底切部所形成。固定凸肩較佳係由橫向於第二寬側表面延伸的壁之底切部所形成,其中,此壁可由凹槽或突起所形成。諸凹槽可為單孔,該等單孔係彼此間隔開,或者圍繞頂板之中心而周向均佈設置。該等孔(特別是盲孔)可具有鑰匙孔狀的輪廓。盲孔可藉由切削加工方法而製成。特別是如下設置:盲孔係以銑削方式製成。特別是使用在周緣及寬側表面上具有切削邊的側刃銑刀。藉由佈置於寬側表面上的切削邊以產生凹槽,直到形成與朝向製程室的寬側間隔開的底部表面。此係藉由銑削工具之豎向位移以實現。而後,藉由銑削工具之水平位移以產生固定凸肩。在本發明的一個變體中提出:被用來將頂板固定在CVD反應器之殼體上的寬側係具有一個或數個突起。該等突起之每一者皆可形成固定凸肩。但亦如下設置:一個固定突起形成數個固定凸肩。在本發明的一個變體中提出:固定凸肩係由同心圍繞扁平組件之中心而延伸的肋條之底切部所形成。亦即,設置肋狀的突起,該突起亦可圍繞扁平組件之中央開口而延伸,其中,該突起可直接鄰接中央的開口,特別是可形成該中央的開口之邊緣。然而,環形的固定凸肩不僅可由肋條形成,亦可由凹槽形成。The present invention is first and essentially related to the improvement of flat components, which can be used or used as top plates in CVD reactors. This top plate has two opposite wide sides. The equal width sides are preferably flat surfaces extending in parallel, wherein one of the wide sides faces the process chamber, and the second wide side faces away from the process chamber. The second wide side facing away from the process chamber has many fixing elements, and the top plate can be fixed on the reactor shell by the fixing elements. The present invention proposes that at least one fixing element is provided. Preferably, several fixing elements are provided. Several fixing elements arranged on a circular arc around a center can be provided, wherein the center is located in the annular opening of the flat component. The fixing element has a fixing shoulder. In the first variant, the invention proposes that the fixing element can only be reached from the second wide side surface of the flat component. The fixing element may be a protrusion facing away from the second wide side. However, the fixing element can also be a groove. Among them, the groove has the largest depth extension, which is smaller than the material thickness of the flat component, that is, smaller than the distance between two opposite wide sides preferably formed by planes extending parallel to each other. According to the present invention, a first wide side that is continuous and uninterrupted toward the process chamber is formed. Where the second wide-side surface has the fixing element, the first wide-side surface disposed oppositely extends continuously without interruption. In this way, the bottom of the groove forming the fixing element and the first wide side surface are separated by the volume of the flat component. The groove thus has a closed bottom surface. The surface of the flat component facing the process chamber is preferably smooth or uniformly structured along its entire surface. The surface may assume a ring shape with a central opening. In addition, the surface preferably does not have an opening on the wide side facing the process chamber. In the second variant of the present invention (which can be combined with the first variant of the present invention), the following arrangement is provided: the fixing element is arranged vertically above the substrate with the top plate installed in the CVD reactor, and the substrate The system is arranged on the bottom surface of the process chamber, especially formed by the substrate holder. In particular, the arrangement is as follows: the flat component has an inner area and an outer area, wherein the inner area is closer to the center than the outer area. It can be arranged as follows: the center of the top plate is formed by the central opening, and the gas inlet member passes through the central opening in the state of being loaded into the CVD reactor. In particular, the arrangement is as follows: the fixing element is closer to the edge of the opening than the outer edge of the outer region. In particular, it is provided that the fixing element is directly adjacent to the edge of the opening. The edge of the opening can extend on the arc line. The center of the arc line can be the center of symmetry of the flat component, and the outer edge of the flat component can also extend on the arc line. In a further aspect of the present invention, it is proposed that the fixed shoulder is formed by the undercut of the hole, notch or groove. The hole can be a blind hole. The fixed shoulders can also be formed by protrusions, especially the undercuts of the ribs. The fixing shoulder is preferably formed by an undercut portion of a wall extending transversely to the second wide side surface, wherein the wall may be formed by a groove or a protrusion. The grooves can be single holes, and the single holes are spaced apart from each other, or evenly arranged circumferentially around the center of the top plate. The holes (especially blind holes) may have a keyhole-like profile. Blind holes can be made by cutting methods. In particular, the arrangement is as follows: the blind holes are made by milling. In particular, a side cutter with cutting edges on the peripheral edge and wide side surface is used. The cutting edges arranged on the wide side surface are used to create grooves until a bottom surface spaced from the wide side facing the process chamber is formed. This is achieved by the vertical displacement of the milling tool. Then, a fixed shoulder is generated by the horizontal displacement of the milling tool. In a variant of the present invention, it is proposed that the wide side used to fix the top plate on the shell of the CVD reactor has one or several protrusions. Each of these protrusions can form a fixed shoulder. But it is also arranged as follows: a fixing protrusion forms a plurality of fixing shoulders. In a variant of the present invention, it is proposed that the fixed shoulder is formed by an undercut of a rib extending concentrically around the center of the flat component. That is, a rib-like protrusion is provided, and the protrusion can also extend around the central opening of the flat component, wherein the protrusion can directly abut the central opening, especially the edge of the central opening can be formed. However, the annular fixed shoulder can be formed not only by ribs, but also by grooves.
使用上述頂板的CVD反應器具有可被抽空的氣密的殼體。殼體內部設有基板座以容置有待被熱處理且特別是有待被塗佈的基板。基板可平放於諸多基板架上,而該等基板架係分別嵌設在基板座之一個凹陷中,且在該處支承於氣墊上。產生氣墊的氣體流較佳係定向流入凹陷中,使得基板架在基板之熱處理期間受驅動而旋轉。基板座可安置在桿體上,而該桿體係可繞桿體軸旋轉,使得基板座可在旋轉平面內旋轉。基板座之下方可設置加熱裝置,藉此可將基板座加熱至製程溫度。加熱裝置可為射頻加熱器或紅外線加熱器。設有氣體入口構件,藉此可將諸多製程氣體饋送到CVD反應器之製程室中。該等製程氣體較佳為第三主族有機金屬化合物及第五主族氫化物。因此,該CVD反應器較佳可為MOCVD反應器。在較佳技術方案中,氣體入口構件係穿過頂板之中央的開口而伸入製程室中,使得製程氣體可從氣體入口構件之排氣區流入製程室中,並且沿豎向穿過製程室。前述扁平組件在此種CVD反應器中係用作為頂板。為了將頂板固定於基板座上方並且使頂板沿豎向且/或沿傾斜方向定向,而使得朝向製程室的寬側平行於製程室底部表面或垂直於基板座之旋轉軸,設有保持元件。保持元件較佳係從CVD反應器之殼體之頂部突出。該處亦可設有多個調整元件,藉由該等調整元件,可分別使一個保持元件沿豎向位移且/或繞豎軸旋轉。根據本發明,CVD反應器具有一個或數個保持元件,而該等保持元件係具有可托持諸固定凸肩的保持凸肩。保持凸肩可由橫向於保持元件之桿體而突出的翼部所形成,或者由盤體所形成。其盤體可呈圓盤形。保持元件之桿體在圓盤之中心連接盤體。盤體或翼部之延伸表面較佳地橫向於保持元件之桿體之延伸方向延伸。保持元件較佳地被建構為可藉由圍繞其各自的桿體旋轉,而從釋放位置進入托持位置。保持凸肩在托持位置上托持著固定凸肩。在本發明的一個變體中,保持凸肩特別是由盤體所形成,則頂板係藉由繞其軸線旋轉,而從釋放位置進入托持位置。為此,固定元件具有前述之鑰匙孔狀的凹槽之形狀。其中,先藉由頂板之豎向的向上運動,以將保持凸肩(即,盤體)插入盲孔中。而後,使頂板繞其圖面軸線(figure axis)旋轉,直至保持凸肩進入鑰匙孔狀的盲孔之窄部中,其中,盤體之邊緣部分托持住固定凸肩。在此變體中,保持凸肩亦可由翼部所形成,而諸翼部係僅在一個方向上從保持元件之桿體之自由端突出。在此變體中亦可如下設置:保持凸肩並非藉由扁平組件之旋轉,而是藉由保持元件之桿體之旋轉,而從釋放位置進入托持位置。拆卸頂板時,根據具體所採用的變體,若非使頂板繞其軸線小幅回轉,則是藉由保持元件之桿體之旋轉以使保持元件之保持凸肩個別地脫離其托持位置。The CVD reactor using the above-mentioned top plate has an airtight casing that can be evacuated. A substrate seat is provided inside the casing to accommodate the substrate to be heat-treated, and in particular, to be coated. The substrate can be laid flat on a plurality of substrate holders, and the substrate holders are respectively embedded in a recess of the substrate holder, and are supported on the air cushion there. The gas flow that generates the air cushion is preferably directed to flow into the recess, so that the substrate holder is driven to rotate during the heat treatment of the substrate. The substrate holder can be arranged on the rod body, and the rod system can rotate around the rod body axis, so that the substrate holder can rotate in the rotation plane. A heating device can be arranged under the substrate holder, so that the substrate holder can be heated to the process temperature. The heating device can be a radio frequency heater or an infrared heater. A gas inlet member is provided, so that many process gases can be fed into the process chamber of the CVD reactor. The process gases are preferably Group III organometallic compounds and Group V hydrides. Therefore, the CVD reactor can preferably be a MOCVD reactor. In a preferred technical solution, the gas inlet member extends into the process chamber through the opening in the center of the top plate, so that the process gas can flow into the process chamber from the exhaust area of the gas inlet member, and pass through the process chamber in the vertical direction. . The aforementioned flat component is used as a top plate in this CVD reactor. In order to fix the top plate above the substrate holder and orient the top plate in a vertical and/or oblique direction so that the wide side facing the process chamber is parallel to the bottom surface of the process chamber or perpendicular to the rotation axis of the substrate holder, a holding element is provided. The holding element preferably protrudes from the top of the shell of the CVD reactor. There may also be a plurality of adjusting elements, by means of these adjusting elements, one holding element can be displaced in the vertical direction and/or rotated around the vertical axis. According to the present invention, the CVD reactor has one or more holding elements, and the holding elements have holding shoulders that can hold the fixed shoulders. The holding shoulder may be formed by a wing protruding transversely to the rod body of the holding element, or may be formed by a disc body. The disc body can be in the shape of a disc. The rod body of the holding element is connected to the disc body in the center of the disc. The extension surface of the disc body or the wing portion preferably extends transversely to the extension direction of the rod body of the holding element. The holding elements are preferably constructed to be able to enter the holding position from the release position by rotating around their respective rod bodies. The holding shoulder holds the fixed shoulder at the holding position. In a variant of the present invention, the retaining shoulder is especially formed by the disc body, and the top plate is moved from the release position to the holding position by rotating about its axis. To this end, the fixing element has the shape of the aforementioned keyhole-shaped groove. Wherein, first, the vertical upward movement of the top plate is used to insert the retaining shoulder (ie, the plate body) into the blind hole. Then, the top plate is rotated around its figure axis until the holding shoulder enters the narrow part of the keyhole-shaped blind hole, wherein the edge part of the disc body supports and holds the fixed shoulder. In this variant, the retaining shoulders can also be formed by wings, and the wings protrude from the free end of the rod of the retaining element in only one direction. In this variant, it can also be arranged as follows: the holding shoulder is not driven by the rotation of the flat component, but by the rotation of the rod of the holding element, and enters the holding position from the release position. When disassembling the top plate, according to the specific variants used, if the top plate is not slightly rotated around its axis, it is the rotation of the rod of the holding element to separate the holding shoulders of the holding element from its holding position.
下面參考所附圖式闡述本發明之實施例。圖式中所示之裝置係為具有反應器殼體1的MOCVD反應器,該反應器殼體係由諸如不鏽鋼殼體或鋁殼體之類的金屬殼體所形成。其殼體可被抽空。氣體入口構件22從殼體1之頂部伸入殼體1之內部,而殼體中設有製程室3,該製程室向上係由頂板2所界定,向下則由基板座20所界定。藉由氣體入口構件22,可將製程氣體饋送到製程室3中,以便於該處在平放於製程室底部表面11上的基板10上沉積半導體層。為此,諸製程氣體係經由排氣區23以進入製程室3中,該等製程氣體較佳為由載氣運送的第三主族有機金屬化合物及第五主族氫化物。The embodiments of the present invention are described below with reference to the accompanying drawings. The device shown in the figure is a MOCVD reactor with a reactor shell 1, and the reactor shell system is formed by a metal shell such as a stainless steel shell or an aluminum shell. The housing can be evacuated. The
基板座20係由桿體21所承載,該桿體可圍繞旋轉軸受到驅動,基板座下方則設有可將基板座20加熱至製程溫度的加熱裝置19。透過桿體21而為凹槽底部的排氣開口(未圖示)提供氣體(未圖示),以支承基板架24。從排氣開口排出氣體流,該氣體流使基板架24保持旋轉懸浮。The
在反應器殼體1內部,以石墨製成的頂板2係在與製程室底部表面11豎向間隔一定距離的位置上延伸。此頂板特別是以經塗佈的石墨製成的頂板,由扁平組件2所形成。頂板2可具有石墨芯部,其表面例如塗佈有陶瓷材料。扁平組件2具有中央的開口12,氣體入口構件22則穿過該中央的開口。頂板2之內區域6與開口12之邊緣相接,該內區域係鄰接開口12之邊緣。實質上呈圓盤形的頂板2具有徑向的外周緣,該外周緣係形成為外區域7之邊界。內區域6在鋪設有基板10之製程室底部表面11的豎向上方延伸,外區域7則在製程室底部表面11被基板10佔據之此區域的徑向外側延伸。頂板2具有形成第一寬側4的底面,該第一寬側係在一個平面內延伸,且應儘可能地平行於製程室底部表面11延伸。在基板座20可受驅動而繞旋轉軸旋轉的反應器中,第一寬側4較佳係垂直於其旋轉軸延伸。第二寬側5係與第一寬側4相對立設置,而該第二寬側並非必須平行於第一寬側4延伸,亦不必在一個平面內延伸。但在實施例中,第二寬側5係平行於第一寬側4延伸。Inside the reactor shell 1, a
根據本發明,第二寬側5具有形成固定元件8的結構,特別是空間結構,而諸固定元件係與保持元件25共同作用而將頂板2保持在預定的位置上。其空間結構被設計為侷限於第二寬側5,且不影響第一寬側4之連續的二維平面延伸。According to the present invention, the second
可設置一個或數個特別是圍繞頂板2之圖面軸線周向均佈設置的固定元件8。但,亦可設置單獨一個固定元件8,其係沿著較大的表面區域延伸,且特別是在第二寬側5上沿一圓弧線延伸。固定元件8與頂板2之中心之間存在較佳地最小的徑向距離。第一寬側在第二寬側5具有固定元件8之處具有光滑或均勻結構化的連續表面。One or several fixing
在圖1至圖7所示之實施例中,固定元件8係由凹槽所形成,且特別是由盲孔所形成。諸固定元件係為分別與一個保持元件25共同作用的單體凹槽。盲孔14各自具有其底部16,該底部具有閉合的表面,即,不具有通往相對立設置的第一寬側4的開口。因此,頂板2之較佳地以石墨製成的芯部之體積區域17在盲孔14的諸底部16之間延伸。盲孔14較佳係用側刃銑刀製成,而側刃銑刀係先藉由豎向運動產生凹槽,而後藉由水平運動產生固定凸肩9。其中,形成凹槽之窄部15。凹槽整體上獲得鑰匙孔狀的輪廓。In the embodiment shown in FIGS. 1 to 7, the fixing
保持元件25之保持凸肩26可伸入以此方式製成的凹槽中。在圖1至4所示之實施例中,保持凸肩26係由圓形的盤體29所形成,桿體27橫向於盤體延伸平面而從該盤體之中心突出。然而,盤體29亦可具有多邊形的輪廓。The holding
安裝頂板2時,首先,豎向向上移動頂板,直至由盤體29所形成的保持凸肩26伸入盲孔14中。接著,使頂板2圍繞其穿過中央開口12而延伸的軸線作旋轉運動,藉此,使頂板2透過旋轉式固定運動而與盤體29形成形狀配合連接,其中,由盤體29之寬側表面所形成的保持凸肩26係托持著固定元件8之固定凸肩9。頂板2較佳地可與保持元件25形成卡口式連接。When installing the
在圖6至圖7所示之實施例中,保持凸肩26係由橫向於桿體27之延伸方向而突出的翼部28所形成。翼部28之寬側表面形成了保持凸肩26,其係在托持位置上貼靠固定凸肩9。In the embodiment shown in FIGS. 6 to 7, the retaining
在此實施例中,頂板2亦可藉由卡口式運動而固定在反應器殼體1上。然而,在此變體中,亦可藉由使桿體27繞其軸線單獨旋轉以完成固定。此係藉由調整元件30以實現,諸調整元件係使保持元件25既能沿豎向運動,亦能沿旋轉方向運動。In this embodiment, the
藉由調整元件30,可改變頂板2之傾斜姿態,以便能使第一寬側4呈現平行於製程室底部表面11之姿態。With the
圖8至圖11所示之實施例與前述實施例之區別在於:固定元件8並非由凹槽所形成,而是由突起所形成。在實施例中,突起18由肋條所形成,該肋條係沿著中央的開口12之邊緣延伸。突起18在其遠離於中央的開口12的一側上具有形成固定凸肩9的切口。固定凸肩9可被保持元件25之保持凸肩26所托持。在此實施例中,保持元件25同樣具有沿豎向延伸的長條形桿體27,在其桿體自由端上設有橫向於桿體27之延伸方向而從桿體突出的翼部28。翼部28之朝上的表面形成保持凸肩26,藉由使保持元件25圍繞其桿體軸旋轉,可將保持凸肩送入托持住固定凸肩9的托持位置。The difference between the embodiment shown in FIGS. 8 to 11 and the previous embodiment is that the fixing
在實施例中,頂板2係由塗佈有碳化矽(SiC)的石墨體所形成。然而,頂板2亦可由其他材料構成,例如,石英、石墨、陶瓷材料等等。在實施例中,頂板2係一體成型。然而,頂板亦可如US 2004/0003779 A1所描述般由數個部分組成。由若干嵌套式環形體所形成的頂板之諸組成部分,可由互不相同的部分組成。舉例而言,一個部分可由石英構成,另一個部分可由塗佈有碳化矽的石墨構成。In the embodiment, the
可設置圖中未示出的多個彈簧,保持元件25係藉由該等彈簧以懸掛狀態固定在調整元件30上,或者,該等彈簧起保持凸肩之作用。頂板係藉由升降運動並透過保持元件25之豎向位移而實現下降或抬升,其升降運動可以手動、氣動、電力或液壓方式加以驅動。為此,特別是設有固定佈置於反應器殼體1上的升降元件30。頂板之材料厚度較佳係處於4 mm與20 mm之間的範圍。藉由保持元件25,可調節製程室之高度,該高度則處於10 mm與40 mm之間的範圍。A plurality of springs not shown in the figure may be provided, and the holding
除了在實施例中鄰近中心而佈置的固定元件8及保持元件25以外,亦可進一步設置鄰近徑向外緣而佈置、特別是亦佈置於頂板2之外區域7中的其他固定元件8或保持元件25。數個固定元件8可佈置在圍繞扁平組件2之對稱中心的圓弧線R上。其配置可為均勻的角度分佈。升降元件30可由圖中未示出的控制裝置以電力方式操作。保持元件25之旋轉運動亦可在控制裝置控制下以機電方式進行。In addition to the fixing
氣體入口構件22之穿過中央開口12的部分係可伸入基板座20之凹槽中。排氣區23較佳地在圓柱面上延伸。The part of the
在前述實施例中,頂板2即為扁平組件。在圖中未示出的實施例中,此扁平組件亦可由數個單件所構成,而該等單件在組裝狀態下形成一個扁平組件。扁平組件2可由數個環形的單體所組成,其中,一個環形單體(例如,徑向外側或徑向內側的環形單體)具有固定元件8。此環形體可形成可供其他環形體支撐的支撐側面,該其他環形體或是包圍具有固定元件8的環形體,或是被具有固定元件8的環形體所包圍。固定元件8可具有與圖1至11所描述之固定元件相同的功能及外形。In the foregoing embodiment, the
以下被視為有利的:固定元件8可僅藉由切削加工方法而形成在具有光滑的寬側表面的圓盤形胚料中。為此,以下被證明是有利的:固定元件形成盲孔,其中,盲孔之底部在材料上與此組件相一致。與盲孔相對立設置的寬側表面具有材料單一的連續表面。進一步有利地,具有圓形輪廓的盲孔係與窄部相接。窄部15可具有寬度W,該寬度係小於盲孔之開口之直徑D。窄部較佳地形成有兩個相對立的邊緣34。窄部15之邊緣34分別定義一個固定凸肩9。兩個平行於彼此而延伸的壁32之間的較寬的容積係在固定凸肩9下方延伸,其中,該等壁32具有等於圓形盲孔之直徑D的間距A。壁32在形成倒圓狀的壁33之情況下彼此銜接。窄部15之與盲孔相對立設置的末端具有倒圓狀的邊緣,其係將邊緣34平滑地連接起來。窄部15之倒圓狀的邊緣係與壁33同軸延伸。此組件在保持元件25上的固定,係藉由此組件相對立於保持元件25的相對旋轉而實現。The following is regarded as advantageous: the fixing
前述實施例係用於說明本申請案整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,此等特徵組合中的兩個、數個或所有特徵組合亦可相互組合,即:The foregoing embodiments are used to illustrate the inventions included in the application as a whole. These inventions are at least independently constituted by the following feature combinations to form an improvement over the prior art. Among them, two, several or all of these feature combinations Feature combinations can also be combined with each other, namely:
一種可在CVD反應器中用作為製程室3之頂板的扁平組件2,此扁平組件具有可朝向製程室3的第一寬側表面4以及背對第一寬側表面的第二寬側表面5,其中,第二寬側表面5具有一個或數個固定元件8,其係分別具有可被托持的固定凸肩9並且係由凹槽所形成,其中,第一寬側表面4在該第二寬側表面於其相對立側上具有固定元件8的部位處具有閉合的表面,其特徵在於:固定元件8為盲孔,其具有在材料上與此組件2相一致的封閉的底部。A
一種組件,其特徵在於:該盲孔具有圓形的開口,而具有寬度W的窄部15係與該開口相接,該寬度係小於該盲孔之直徑D,其中,窄部15之兩個相對立的邊緣34分別形成一個固定凸肩9。A component characterized in that: the blind hole has a circular opening, and a
一種組件,其特徵在於:此組件2之內區域6係鄰接中央的開口12,並且,諸固定元件8相較於外區域7之外緣係更靠近開口12之邊緣。An assembly characterized in that the
一種組件,其特徵在於:固定凸肩9係透過切削加工方法,且/或藉由側刃銑刀,以形成於由石墨構成的此組件之至少一個芯部上。A component is characterized in that the fixed
一種組件,其特徵在於:數個固定元件8佈置於圍繞此組件2之中心的圓弧線R上,以及/或者,背對至少一個固定元件8的第一寬側表面4係具有沿其整個表面延伸皆呈光滑或均勻結構化的閉合的表面。An assembly characterized in that: a plurality of fixing
一種組件,其特徵在於:窄部15之兩個各被一個固定凸肩9跨越的相對立的壁32具有等於直徑D的間距A。An assembly characterized in that the two
一種CVD反應器,其特徵在於:固定凸肩9係由肋狀的突起18之底切部所形成,而該突起係同心圍繞此組件2之中央的開口12延伸。A CVD reactor is characterized in that the fixed
一種組件,其特徵在於:固定凸肩9係佈置在肋狀的突起18之徑向朝外的壁上。A component is characterized in that the fixed
一種CVD反應器,其特徵在於:扁平組件2係根據前述諸項發明中任一者而建構,並且由一個或數個保持元件25保持,而該等保持元件係具有托持諸多固定凸肩9的多個保持凸肩26。A CVD reactor, characterized in that: the
一種CVD反應器,其特徵在於:諸保持元件25係為高度可調整,且/或具有由隔熱材料構成的長條形的桿體27。A CVD reactor is characterized in that the holding
一種CVD反應器,其特徵在於:保持凸肩26係由佈置於保持元件25之自由端上的翼部28或盤體29所形成,以及/或者,保持凸肩26可藉由保持元件25之旋轉及/或藉由該扁平組件之旋轉,以離開或進入托持固定凸肩(9)的托持位置。A CVD reactor characterized in that: the retaining
一種CVD反應器,其特徵在於:在CVD反應器之基板座20上方的位置處,將扁平組件2固定在諸多保持元件25上,其中,旋轉保持元件25或扁平組件2。A CVD reactor is characterized in that a
一種組件、一種CVD反應器、一種方法、一種用途,其特徵在於:具有前述諸項發明之特徵中之一者。A component, a CVD reactor, a method, and a use are characterized by having one of the characteristics of the aforementioned inventions.
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故,本申請案之揭露內容亦包含相關/所附優先權檔案(在先申請案副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請案之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明,其目的主要在於可在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一或數項。本發明亦有關於如下設計形式:前述說明中所述及之個別特徵不實現,而特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。All the disclosed features (as individual features or combinations of features) are the essence of the invention. Therefore, the disclosure content of this application also includes all the content disclosed in the related/attached priority files (copy of the previous application), and the features described in these files are also included in the scope of the patent application of this application. The appendix uses its characteristics to describe the characteristics of the improvement scheme of the present invention with respect to the prior art, and its purpose is mainly to make a divisional application on the basis of these claims. The invention given in each claim may further have one or several of the features given in the foregoing description, especially marked with symbols and/or given in the symbol description. The present invention also relates to the following design forms: the individual features described in the foregoing description are not realized, and are especially unnecessary for specific applications or features that can be replaced by other technically equivalent components.
1:(反應器)殼體 2:(扁平)組件/頂板 3:製程室 4:(第一)寬側/寬側表面 5:(第二)寬側/寬側表面 6:(扁平組件/頂板)內區域 7:(扁平組件/頂板)外區域 8:固定元件 9:固定凸肩 10:基板 11:製程室底部表面 12:(中央)開口 13:壁部 14:盲孔 15:窄部 16:(盲孔)底部 17:體積區域 18:(肋狀)突起 19:加熱裝置 20:基板座 21:桿體 22:氣體入口構件 23:排氣區 24:基板架 25:保持元件 26:保持凸肩 27:桿體 28:翼部 29:盤體 30:調整元件/升降元件 31:壁 32:壁 33:壁 34:(窄部15)邊緣 A:(壁32)間距 D:(盲孔14)直徑 R:(圍繞組件之中心)圓弧線 W:(窄部15)寬度1: (reactor) shell 2: (flat) component/top plate 3: Process room 4: (first) wide side/wide side surface 5: (Second) wide side/wide side surface 6: (flat module/top plate) inner area 7: (flat component/top plate) outer area 8: fixed components 9: fixed shoulder 10: substrate 11: The bottom surface of the process chamber 12: (center) opening 13: Wall 14: Blind hole 15: Narrow part 16: (blind hole) bottom 17: Volume area 18: (rib-shaped) protrusion 19: Heating device 20: base plate seat 21: Rod body 22: Gas inlet component 23: Exhaust area 24: substrate rack 25: Keep components 26: Keep the shoulders 27: Rod body 28: Wing 29: Disc body 30: Adjusting element/lifting element 31: Wall 32: wall 33: wall 34: (narrow part 15) edge A: (wall 32) spacing D: (blind hole 14) diameter R: (around the center of the component) arc line W: (narrow part 15) width
圖1為具有本發明之用於保持頂板的保持配置的CVD反應器之示意剖面圖。
圖2為圖1中部分II之放大圖。
圖3為以圖2中箭頭III所示視向觀測到的頂板2之第二寬側表面之示意圖。
圖4為根據圖2及圖3之鑰匙孔狀的固定元件之透視立體圖。
圖5為頂板2以及圍繞中央開口而周向均佈設置的固定元件之俯視圖。
圖6為第二實施例之如圖2所示之視圖。
圖7為第二實施例之如圖4所示之視圖。
圖8為第三實施例之類似於圖1而其中僅圖示扁平組件2、反應器殼體1之一部分及保持元件25的視圖。
圖9為圖8所示實施例之頂板之俯視圖。
圖10為圖8所示實施例之由拱肋狀突起所形成的固定元件之透視立體圖。
圖11為根據圖10但顯示托持位置之視圖。Fig. 1 is a schematic cross-sectional view of a CVD reactor having a holding arrangement for holding a top plate of the present invention.
Fig. 2 is an enlarged view of part II in Fig. 1.
FIG. 3 is a schematic diagram of the second wide side surface of the
1:(反應器)殼體 1: (reactor) shell
2:(扁平)組件/頂板 2: (flat) component/top plate
3:製程室 3: Process room
4:(第一)寬側/寬側表面 4: (first) wide side/wide side surface
5:(第二)寬側/寬側表面 5: (Second) wide side/wide side surface
6:(扁平組件/頂板)內區域 6: (flat module/top plate) inner area
7:(扁平組件/頂板)外區域 7: (flat component/top plate) outer area
8:固定元件 8: fixed components
9:固定凸肩 9: fixed shoulder
10:基板 10: substrate
11:製程室底部表面 11: The bottom surface of the process chamber
12:(中央)開口 12: (center) opening
19:加熱裝置 19: Heating device
20:基板座 20: base plate seat
21:桿體 21: Rod body
22:氣體入口構件 22: Gas inlet component
23:排氣區 23: Exhaust area
24:基板架 24: substrate rack
25:保持元件 25: Keep components
30:調整元件/升降元件 30: Adjusting element/lifting element
Claims (13)
Applications Claiming Priority (2)
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DE102019117479.1A DE102019117479A1 (en) | 2019-06-28 | 2019-06-28 | Flat component that can be used in a CVD reactor |
DE102019117479.1 | 2019-06-28 |
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TW202117060A true TW202117060A (en) | 2021-05-01 |
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TW109121688A TW202117060A (en) | 2019-06-28 | 2020-06-24 | Flat component that can be used in a CVD reactor |
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DE (1) | DE102019117479A1 (en) |
TW (1) | TW202117060A (en) |
WO (1) | WO2020260449A1 (en) |
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US5855679A (en) * | 1995-03-30 | 1999-01-05 | Nec Corporation | Semiconductor manufacturing apparatus |
JP3480271B2 (en) * | 1997-10-07 | 2003-12-15 | 東京エレクトロン株式会社 | Shower head structure of heat treatment equipment |
DE69810969T2 (en) | 1998-02-24 | 2003-08-07 | Aixtron Ag | ARRANGEMENT FOR THE TOP WALL OF A REACTOR FOR EPITAXIC GROWTH |
DE10043601A1 (en) | 2000-09-01 | 2002-03-14 | Aixtron Ag | Device and method for depositing, in particular, crystalline layers on, in particular, crystalline substrates |
DE10043599A1 (en) | 2000-09-01 | 2002-03-14 | Aixtron Ag | Device for depositing, in particular, crystalline layers on one or more, in particular likewise, crystalline substrates |
US8152954B2 (en) * | 2007-10-12 | 2012-04-10 | Lam Research Corporation | Showerhead electrode assemblies and plasma processing chambers incorporating the same |
JP5865625B2 (en) | 2011-08-05 | 2016-02-17 | 昭和電工株式会社 | Epitaxial wafer manufacturing apparatus and manufacturing method |
DE102012110125A1 (en) * | 2012-10-24 | 2014-04-24 | Aixtron Se | Device for treating substrates with a replaceable ceiling plate and method for replacing such a ceiling plate |
DE102012222364A1 (en) | 2012-12-05 | 2014-06-05 | E.G.O. Elektro-Gerätebau GmbH | Connector and device with such a connector |
JP6379550B2 (en) * | 2014-03-18 | 2018-08-29 | 東京エレクトロン株式会社 | Deposition equipment |
US10418264B2 (en) * | 2016-06-08 | 2019-09-17 | Hermes-Epitek Corporation | Assembling device used for semiconductor equipment |
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