TW202037753A - Substrate holder for use in a cvd reactor - Google Patents
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- TW202037753A TW202037753A TW108145147A TW108145147A TW202037753A TW 202037753 A TW202037753 A TW 202037753A TW 108145147 A TW108145147 A TW 108145147A TW 108145147 A TW108145147 A TW 108145147A TW 202037753 A TW202037753 A TW 202037753A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Abstract
Description
本發明係有關於一種用於應用在CVD反應器中的裝置,具有一基板架,其包含至少三個起始於寬側面的承凸,該等承凸具有位於共同之平面中之具備第一圓當量直徑的承載面,並係佈置成使得基板之經支撐於承載面上之邊緣區域包圍的中心區域具有與寬側面的距離。 The present invention relates to a device for use in a CVD reactor. It has a substrate holder, which includes at least three bearing projections starting from a wide side surface, and the bearing projections have a first The carrying surface of the equivalent circle diameter is arranged so that the central area surrounded by the edge area of the substrate supported on the carrying surface has a distance from the wide side surface.
前述類型之基板架被應用在用於固持扁平基板的CVD反應器中,其中,自下寬側面對基板架進行加熱。上寬側面將熱散發至貼靠於基板架上之基板。由於基板因熱變形或其他應變而無法平面式地抵靠在基板架寬側上,於是基板架的寬側面上產生承凸,基板的邊緣區域支撐在承凸上。如此一來,基板之邊緣區域被設於圓弧線上之數個承凸點狀支撐。透過熱輻射或熱傳導來進行自基板架之寬側面至基板的熱輸運,其中,熱傳導取決於位於製程室內之氣體之導熱特性,此氣體位於基板之底側與基板架之寬側面之間。與位於承凸之間之區域相比,承凸範圍內之區域特定的熱輸運更大,故在承凸之區域內,在基板表面上會出現更高的溫度。在為基板表面塗佈Ⅲ-V族半導體層時,可能會在承凸處出現不均勻。US 2003/0209326 A1描述過設於基板座之腔之底部邊緣區域內的凹部,其中插入有銷件。插入凹部的銷件構成承凸,其具有直徑約600μm的承載面。基板之底側與基板座之寬側面的 距離在此亦為約600μm。 The aforementioned type of substrate holder is used in a CVD reactor for holding flat substrates, wherein the substrate holder is heated from the lower wide side. The upper wide side dissipates the heat to the substrate leaning on the substrate holder. Since the substrate cannot be flat against the wide side of the substrate holder due to thermal deformation or other strains, a bearing protrusion is generated on the wide side of the substrate holder, and the edge area of the substrate is supported on the bearing protrusion. In this way, the edge area of the substrate is supported by a number of convex points arranged on the arc line. The heat transfer from the wide side of the substrate holder to the substrate is carried out through heat radiation or heat conduction. The heat transfer depends on the thermal conductivity of the gas in the process chamber, which is located between the bottom side of the substrate and the wide side of the substrate holder. Compared with the area located between the protrusions, the area within the protrusions has a greater specific heat transport, so in the area of the protrusions, higher temperatures appear on the substrate surface. When the III-V group semiconductor layer is coated on the surface of the substrate, unevenness may appear in the convex part. US 2003/0209326 A1 describes a recess provided in the bottom edge region of the cavity of the substrate holder, in which a pin is inserted. The pin inserted into the recess constitutes a bearing protrusion, which has a bearing surface with a diameter of about 600 μm. Between the bottom side of the substrate and the wide side of the substrate holder The distance here is also about 600 μm.
US 6,840,767 B2描述過一種具有用於容置基板的支承面的基板座,此支承面由數個均勻地分佈在支承面的範圍內的凸起構成,其中,數個凸起中之每一者皆形成具有約250μm的圓當量直徑的承載面。 US 6,840,767 B2 describes a substrate holder with a supporting surface for accommodating the substrate. The supporting surface is composed of a plurality of protrusions uniformly distributed within the range of the supporting surface, wherein each of the plurality of protrusions Both form a bearing surface with a circular equivalent diameter of about 250 μm.
US 2010/0227455 A1描述過一種包含設於其中之腔的基板座,在腔中設有在邊緣側經支撐的基板。 US 2010/0227455 A1 describes a substrate holder including a cavity provided therein, and a substrate supported on the edge side is provided in the cavity.
為了將待塗佈之基板之表面上之水平溫度梯度最小化,DE 10 2016 103 530 A1已提出:使承凸起始於寬側之構建為凹槽的凹部。呈截錐狀起始於凹部的承凸的圓頂狀端面應與基板之底側接觸,其中,接觸面應具有最大300μm的圓當量直徑。
In order to minimize the horizontal temperature gradient on the surface of the substrate to be coated,
本發明之目的在於:提供用以進一步減小表面中之前述溫度不均勻性的措施。 The object of the present invention is to provide measures to further reduce the aforementioned temperature non-uniformity in the surface.
該目的透過申請專利範圍所給出之發明而達成,其中,附屬項不僅為獨立項所給出之發明的有利改良方案,亦為該目的之獨創解決方案。 This objective is achieved through the inventions given in the scope of the patent application. Among them, the appendix is not only a beneficial improvement scheme of the invention given in the independent item, but also an original solution for the objective.
根據本發明之一作為對在DE 10 2016 103 530 A1中描述之裝置之改良方案的態樣,該承凸係由至少兩個疊置的柱區段構成,其中,最上部的柱區段形成一平整的承載面。該最上部的柱區段可具有承凸之最小的圓當量直徑。該最下部的柱區段可具有承凸之最大的圓當量直徑。在此亦較佳地,該承凸起始於寬側面之一平整區段。但亦可採用以下方案:該最下部的柱區段係被環形凹部、特別是被經倒圓之底部包圍。在總高度超出300μm的情況下,該承凸係構建為兩階式。在
此情形下,該第二下階部之直徑可落在介於1200μm與1500μm之間的範圍內。該上階部之直徑可為300μm,並且特別是小於基板之材料厚度。
According to one aspect of the present invention as an improvement to the device described in
根據本發明之作為對在US 2003/0209326 A1中描述之裝置之改良方案的第二態樣,該等承凸與寬側面之緣邊的距離最大為6000μm、3000μm、1000μm、600μm或300μm。該寬側面之經緣邊之延伸界定的直徑較佳略小於經承凸承載之基板的直徑,使得基板藉由邊緣區域伸出寬側面之緣邊。在此突出區域下可設有承載環,其可供抓臂之指部自下方卡住,從而被從基板架取下。藉由此承載環能夠對基板進行操縱。該等承凸可佈置在寬側面之一邊緣條帶中,其具有最大為6000μm、3000μm、1000μm、600μm或300μm的條帶寬度。但較佳地,該等承凸係直接位於緣邊處,其中,緣邊特別是與一周面(其為圓柱面)鄰接。此周面又可與一階部鄰接,該階部特別是適於支撐該承載環。在本發明之具有獨立含義之另一態樣中,該等承凸之高度大於其最大直徑。特定言之,承凸之圓當量直徑最大為300μm,且其高度至少為400μm。該等承凸應直接起始於該寬側面之一平整區段。在此,該寬側面之平整區段至少在一與承凸間隔5000μm的區域內延伸。 According to the second aspect of the present invention as an improvement to the device described in US 2003/0209326 A1, the distance between the bearing protrusions and the edge of the broad side surface is a maximum of 6000 μm, 3000 μm, 1000 μm, 600 μm or 300 μm. The diameter defined by the extension of the wide side surface is preferably slightly smaller than the diameter of the substrate carried by the projection, so that the substrate extends beyond the edge of the wide side surface through the edge area. A bearing ring can be provided under this protruding area, which can be clamped by the fingers of the grasping arm from below, so as to be removed from the substrate holder. With this carrier ring, the substrate can be manipulated. The bearing protrusions may be arranged in an edge strip of one of the wide sides, which has a strip width of 6000 μm, 3000 μm, 1000 μm, 600 μm, or 300 μm at most. However, preferably, the bearing protrusions are directly located at the edge, wherein the edge is particularly adjacent to the peripheral surface (which is a cylindrical surface). This peripheral surface can again adjoin a step, which is particularly suitable for supporting the carrier ring. In another aspect of the present invention with independent meaning, the height of the bearing protrusions is greater than the maximum diameter. In particular, the maximum circle equivalent diameter of the bearing protrusion is 300 μm, and its height is at least 400 μm. The projections should start directly from a flat section of the wide side. Here, the flat section of the broad side surface extends at least in an area separated from the supporting protrusion by 5000 μm.
一種特別是根據本發明的第三態樣(該態樣亦為對根據DE 10 2016 103 530 A1之裝置的改良方案)的裝置提出:所有接觸面皆由在一共同的平面中延伸之承載面構成。本發明之實施方式可具有平整的承載面,其具有最大為600μm、較佳最大為300μm的第一圓當量直徑。承載面之圓當量最小直徑可為150μm或300μm。承凸之高度可落在介於150與400μm之間的範圍內。可採用以下方案:截錐狀承凸之壁部以無曲折點的方式起始於環形凹部。 A device particularly according to the third aspect of the invention (this aspect is also an improvement of the device according to DE 10 2016 103 530 A1) proposes that all contact surfaces are formed by a bearing surface extending in a common plane constitute. Embodiments of the present invention may have a flat bearing surface with a first equivalent circle diameter of at most 600 μm, preferably at most 300 μm. The minimum circle equivalent diameter of the bearing surface can be 150μm or 300μm. The height of the bearing protrusion can fall within a range between 150 and 400 μm. The following solution can be adopted: the wall portion of the truncated cone-shaped convex bearing starts from the annular recess in a manner without bending points.
前述態樣可具有下列可選的特性。該可等於承載面與經寬側面界定之基準平面的距離的高度係大於該平整承載面之圓當量直徑。該圓當量直徑等於具有與該承載面相同的面積的圓的直徑。在一改良方案中,該承凸之最大直徑可小於600μm。直徑在此亦指圓當量直徑,其等於具有與承凸相同的橫截面積的圓的直徑。此外,特別是根據本發明之一自有態樣,承載面之圓當量直徑及/或承凸之最大橫截面之圓當量直徑小於基板之厚度,其中,該基板為扁平體。承凸之高度可為至少100μm、至少200或至少400μm。在本發明之一改良方案中,該承凸之橫截面並非圓形。承凸可具有多邊形平面圖。該平面圖可為六角形或矩形。此外,該承凸可由一柱狀體構成,該柱狀體之平面圖可為圓形或非圓形。但亦可採用以下方案:承凸之橫截面沿背離寬側面的方向減小。據此,承凸之最大橫截面例如可為承凸之基面,承凸藉由該基面起始自寬側面。在此情形下,承凸之最小橫截面為承載面。承凸之橫截面可自寬側面朝向承載面持續減小。但該橫截面亦可分階式減小。據此,該承凸例如可具有兩個階部區段,其分別具有橫截面不同的柱狀形態。該等平整的承載面位於一共同的平面中,該平面對應基板之底側。根據本發明之一較佳方案,該等承凸直接地起始於該寬側面。在此情形下,基準平面穿過承凸之根部延伸。但在本發明之一方案中,該承凸亦可經環狀凹部包圍,如同DE 10 2016 103 530 A1或US 2003/0209326 A1所揭示的那般。在此情形下,基準面穿過凹部之徑向外緣延伸,該凹部可為凹槽。但基準面亦可穿過凹部之最低點延伸。在本發明之一改良方案中,該承凸係材料一致地對應該基板架。該基板架可由碳化矽或包覆石墨構成。為製造本發明之基板架,使用由石墨或尤佳由碳化矽構成之坯料,特別是藉由銑刀對該坯料進行磨料加工。藉由該銑刀例如逐
步地將寬側面加深,其中,承凸保持不變。藉由該方法還能產生階部,可將一支承環附接在該階部上,該支承環用於將經承凸承載之基板取下。此外,該裝置亦可具有基板座,該基板座具有供基板架置入的腔。在一方案中,該基板架自身可實現基板座之功能並具有數個基板載位,該等基板載位分別具有承凸,其佈置在一圍繞中心的圓弧線上。較佳分別設有六個承凸。
The aforementioned aspect may have the following optional characteristics. The height that can be equal to the distance between the bearing surface and the reference plane defined by the broad side surface is greater than the equivalent circle diameter of the flat bearing surface. The circle equivalent diameter is equal to the diameter of a circle having the same area as the bearing surface. In an improved solution, the maximum diameter of the bearing protrusion may be less than 600 μm. The diameter here also refers to a circle equivalent diameter, which is equal to the diameter of a circle having the same cross-sectional area as the bearing projection. In addition, particularly according to an aspect of the present invention, the equivalent circle diameter of the bearing surface and/or the equivalent circle diameter of the largest cross section of the bearing protrusion is smaller than the thickness of the substrate, wherein the substrate is a flat body. The height of the protrusion may be at least 100 μm, at least 200, or at least 400 μm. In an improved solution of the present invention, the cross section of the bearing protrusion is not circular. The bearing projection may have a polygonal plan view. The plan view can be hexagonal or rectangular. In addition, the bearing protrusion can be formed by a columnar body, and the plan view of the columnar body can be circular or non-circular. However, the following scheme can also be adopted: the cross-section of the bearing protrusion decreases in the direction away from the wide side. Accordingly, the maximum cross-section of the bearing protrusion can be, for example, the base surface of the bearing protrusion, from which the bearing protrusion starts from the wide side surface. In this case, the smallest cross section of the bearing is the bearing surface. The cross section of the bearing protrusion can continuously decrease from the wide side to the bearing surface. However, the cross section can also be reduced in steps. Accordingly, the bearing protrusion may have, for example, two step sections, which respectively have columnar shapes with different cross sections. The flat bearing surfaces are located in a common plane corresponding to the bottom side of the substrate. According to a preferred solution of the present invention, the bearing protrusions directly start from the wide side surface. In this case, the reference plane extends through the root of the bearing. However, in one aspect of the present invention, the bearing protrusion can also be surrounded by a ring-shaped recess, as disclosed in
1:CVD反應器 1: CVD reactor
2:氣體入口構件 2: Gas inlet component
3:基板座 3: substrate holder
4:製程室 4: Process room
5:製程室頂部 5: The top of the process room
6:腔 6: cavity
7:氣體輸送管線 7: Gas transmission pipeline
8:腔底 8: bottom of cavity
9:加熱裝置 9: heating device
10:基板架 10: substrate rack
11:下寬側面 11: Lower wide side
12:上寬側面 12: Upper wide side
13:承凸 13: bearing convex
13':側面 13': side
14:承載面 14: bearing surface
14':平面 14': plane
15:上區段 15: Upper section
16:下區段 16: lower section
17:基板 17: substrate
17':基板底側 17': bottom side of substrate
18:基準平面 18: Datum plane
19:承載環 19: Carrying ring
20:凹槽,凹部 20: grooves, recesses
20':邊緣 20': Edge
20":頂點線 20": Vertex line
21:階部 21: Stage
22:承載凸肩 22: bearing shoulder
23:突出區域 23: prominent area
24:周面 24: circumference
25:緣邊 25: Edge
A1:區段 A1: Section
B:厚度 B: thickness
D1:直徑 D1: diameter
D2:直徑 D2: diameter
D3:直徑 D3: diameter
R:邊緣區域 R: marginal area
Z:中心區域 Z: central area
a:距離 a: distance
h:高度 h: height
下面結合附圖對本發明之實施例進行說明。其中: The embodiments of the present invention will be described below with reference to the drawings. among them:
圖1為CVD反應器1之示意性橫截面圖, Figure 1 is a schematic cross-sectional view of a CVD reactor 1,
圖2為圖1中之局部Ⅱ的放大圖, Figure 2 is an enlarged view of part Ⅱ in Figure 1,
圖3為圖2中之局部Ⅲ的放大圖, Figure 3 is an enlarged view of part Ⅲ in Figure 2,
圖4為本發明第二實施例如圖3所示之視圖, Figure 4 is a view of the second embodiment of the present invention as shown in Figure 3,
圖5為根據圖3中之線V-V的剖面圖, Figure 5 is a cross-sectional view according to the line V-V in Figure 3,
圖6為本發明第三實施例如圖3所示之視圖,以及 Figure 6 is a view of the third embodiment of the present invention as shown in Figure 3, and
圖7為基板架10之俯視圖,用以闡明承凸13之位置。
FIG. 7 is a top view of the
圖1為包含反應器殼體的CVD反應器1的示意性剖面圖,製程室4位於該反應器殼體中。氣體入口構件2伸入製程室4,透過該氣體入口構件能夠將諸如第Ⅲ主族元素之有機金屬化合物以及第V主族元素之氫化物的製程氣體與載氣一起饋送入製程室4。在朝上方向上,藉由視情況經冷卻之製程室頂部5界定製程室4。在朝下方向上,透過由石墨或類似適宜材料構成之基板座3界定製程室4。在基板座3下方設有加熱裝置9,藉由該加熱裝置將熱輸送至基板座3。
Fig. 1 is a schematic cross-sectional view of a CVD reactor 1 including a reactor shell, and a process chamber 4 is located in the reactor shell. The
在基板座3之面向製程室4的頂側上,在一圍繞基板座
3之中心的圓形佈局中設有數個腔6,在該等腔中設有各一基板架10。透過氣體輸送管線7能夠將一載氣饋送入腔6,基板架10貼靠在該載氣上。產生該承載基板架10的氣墊,使得基板架10以置入腔6的方式實施圍繞該基板架之軸線的旋轉。基板架10之底側11可以是平整的。但該底側亦可具有若干空間結構。就此而言,圖式並非遵循比例繪製。
On the top side of the
基板架10具有徑向外側階部21,在該階部上貼靠有承載環19,該承載環具有徑向朝內的承載階部22,以及該承載環透過一突出區域23伸出基板架10之徑向外側區域。承載環19之頂側大致與基板座3之頂側齊平。
The
如圖2、3、4及6所示,基板架10具有與下寬側面11相對的上寬側面12,其實質上在一平面中延伸。承凸13起始於上寬側面12之邊緣段。如圖7所示,設有總共六個以均勻的角度分佈圍繞基板架10之中心佈置的承凸13。承凸13具有各一承載面14,其中,所有承凸13之承載面14在一共同的平面中延伸。此平面由基板17之底側17'形成,該基板由基板架10承載。圓盤形基板17具有中心區域Z,其以距離a中空地位於寬側面12上方。僅在邊緣區域R內藉由承凸13承載基板17,其中,基板17之最外緣位於承載凸肩22上方,故可透過抬升承載環19將基板17自基板架10移除。
As shown in FIGS. 2, 3, 4, and 6, the
在承凸13之如圖3及圖4所示之實施例中,涉及由碳化矽製造之基板架10。基板架10係透過磨料工藝,例如藉由銑刀自實心材料加工出。與此對應地,承凸13係以材料一致的方式與基板架10之塊材連接。承凸13具有六角形平面圖。承凸13之最大橫截面位於承凸13之根部區域內,在該根部區域內,承凸13起始於在一平面中
延伸至承凸13之邊緣的寬側面12。
In the embodiment shown in FIGS. 3 and 4 of the bearing
在如圖4所示之實施例中,承載面14具有實質上與承凸13之根部區域之橫截面相同的橫截面。D1表示在一平面中延伸之承載面14的圓當量直徑。D2表示承凸13之在寬側面12中延伸之根部面的圓當量直徑。在本實施例中,圓當量直徑D1與D2一樣大並且為約300μm。但該等直徑亦可達到600μm。承凸13之高度h在此為約400μm。高度h亦可更小,但特別是大於100μm。總共六個承凸13起始於寬側面12之一平整區段。寬側面平面至少在以5mm的半徑圍繞承凸的區域內延伸。較佳地,整個寬側面12不具有階部或者其他凸起或凹部。寬側面12至少近乎平整地延伸,使得在各位置上,其與在具備數學精確性的平面中延伸的基準平面的最大距離為10μm。
In the embodiment shown in FIG. 4, the bearing
圖3示出承凸13之一實施例,該承凸由兩個疊置的柱區段15、16構成。下區段16具有最大橫截面,該橫截面具有約為600μm的圓當量直徑D2。上區段15具有約300μm的圓當量直徑D1。高度h在此亦為約400μm。該二疊置的柱形區段15、16可具有非圓形的,特別是多邊形、六角形或矩形的橫截面。介於上區段15與下區段16之間之階面較佳平行於寬側面12或承載面14延伸。在本實施例中,寬側面12之設計與如圖3所示的設計相同。
FIG. 3 shows an embodiment of the bearing
圖6示出承凸13之第三實施例。基板架10在此可由石墨製成,並在成型後塗佈有碳化矽。承凸13在此具有一側面,其沿呈截錐狀之包絡面延伸。該包絡面可為旋轉面。該包絡面特別是為經反轉之錐面。在如圖3及圖5所示之實施例中,承凸13直接起始於一平面,與此不同地,在如圖6所示之實施例中,承凸13起始於沿承凸13之邊緣延伸的凹部20。
FIG. 6 shows a third embodiment of the bearing
在如圖4及圖6所示之實施例中,承凸13直接位於寬側面12之邊緣24處,在該邊緣處,寬側面12與一由柱面壁形成之周面24鄰接。周面24過渡進入階部21,承凸13位於該階部上。承凸13之徑向背離基板架10之中心的一側由柱面之一區段構成。承凸13之此徑向朝外的壁部係與經承凸13承載之基板17的緣邊間隔一區段A1,其中,此距離可為3至3.5mm。
In the embodiment shown in FIGS. 4 and 6, the bearing
如圖6所示之凹部20可沿一弧線延伸,該弧線之中心為承凸13之中心。凹部20之圓形輪廓線之外徑D3在此可落在介於1500μm與2000μm之間的範圍內。凹槽20之深度可為50μm。凹槽20之頂點線20'可界定一基準平面18,自該基準平面出發測量高度h,其在此為約150μm。承載面14之圓當量直徑D1在此同樣可小於300μm。在本實施例中,該圓當量直徑為約150μm。
The
基板底側17'與寬側面12的距離a在此可落在100μm的範圍內。寬側面12可除環形凹部20以外皆平整延伸,其中,平面亦指以下面:其略微呈凹面狀延伸,並且在各位置上與具備數學精確性的基準平面偏離最多10μm、最多20μm或最多50μm。
The distance a between the
在如圖3所示之實施例中,該二階部可具有相同的階部高度。承載面14之圓當量直徑D1在此可小於400μm,較佳小於300μm。但該圓當量直徑亦可大於300μm,並且具有例如600μm的最大值。二階式承凸13之最下部的階部的直徑D2可為1000μm、1200μm甚或1500μm。最下部的階部的圓當量直徑D2特別是小於1500μm、小於1200μm或小於1000μm。
In the embodiment shown in FIG. 3, the second step may have the same step height. The equivalent circle diameter D1 of the bearing
本發明之主要特徵如下:承凸13構成具有高度及直徑的間隔元件,其中,該直徑小於750μm並且較佳為約300μm。承凸
13特別是為基板架10之材料一致的組成部分。該等承凸特別是並非嵌件,而是透過磨料工藝製造。承載元件之數目較佳小於10。承載元件之數目特別是大於或等於3、4、5或6,其中,該等承載元件係徑向均勻地圍繞一中心分佈。此外,承凸13之圓當量直徑可小於其高度h。此外可採用以下方案:基板架10為基板座配置之部件,其中,基板座3具有數個腔,其圍繞基板座3之中心均勻分佈,並且在每個腔中皆設有一基板架。該基板架較佳由矽石墨製成。但該基板架亦可由石墨製成,且隨後被塗佈碳化矽。在一尤佳技術方案中,該承載元件具有二階形狀、截錐形或柱形。
The main feature of the present invention is as follows: the bearing
前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,此等特徵組合中的兩項、數項或其全部亦可相互組合,即: The foregoing embodiments are used to illustrate the inventions contained in the application as a whole. These inventions are at least independently constituted by the following feature combinations to form improvements over the prior art, wherein two, several or all of these feature combinations Can also be combined with each other, namely:
一種裝置,其特徵在於:承凸13由至少兩個疊置的柱區段15、16構成,其中,最上部的柱區段15具有形成接觸面的具備第一圓當量直徑D1的平整承載面14,以及最下部的柱區段16具有第二圓當量直徑D2。
A device, characterized in that: the bearing
一種裝置,其特徵在於:承凸13之最大橫截面之第二圓當量直徑D2小於600μm。
A device characterized in that the second circle equivalent diameter D2 of the largest cross section of the bearing
一種裝置,其特徵在於:承凸13與寬側面12之緣邊25的距離最大為6000μm、3000μm、1000μm、600μm或300μm。
A device is characterized in that the distance between the supporting
一種裝置,其特徵在於:承凸13係直接佈置在緣邊25處,或佈置在具有最大6000μm、3000μm、1000μm、600μm或300μm之徑向延伸的邊緣條帶內。
A device is characterized in that the bearing
一種裝置,其特徵在於:緣邊25與一周面24鄰接,該
周面又與一階部鄰接。
A device, characterized in that: the
一種裝置,其特徵在於:承凸13之側面13'至少局部地沿截錐狀包絡面延伸。
A device is characterized in that the side surface 13' of the bearing
一種裝置,其特徵在於:等同於承載面14與經寬側面12界定之基準平面18的距離的高度h至少為400μm,以及/或者,承載面14具有最大600μm、特別是最大300μm的第一圓當量直徑D1,以及/或者,承凸13直接地起始於寬側面12之一平整區域或一凹部。
A device, characterized in that: the height h equivalent to the distance between the bearing
一種裝置,其特徵在於:承凸13之橫截面並非圓形,並且特別是具有多邊形、六角形或矩形的平面圖。
A device is characterized in that the cross section of the bearing
一種裝置,其特徵在於:承凸13係材料一致地對應基板架10,其中,基板架10由石墨或碳化矽構成。
A device is characterized in that the material of the bearing and convex 13 series corresponds to the
一種方法,其特徵在於:透過磨料工藝從由石墨或碳化矽構成之坯料之實心材料加工出承凸13。
A method, characterized in that the bearing
一種裝置,其特徵在於:承凸13之最大圓當量直徑大於其高度h。
A device characterized in that the maximum circle equivalent diameter of the bearing
一種應用,其特徵在於:經承凸13承載之基板的厚度小於承載面14之第一圓當量直徑D1。
An application is characterized in that the thickness of the substrate carried by the bearing
所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明(即使不含相關請求項之特徵),其目的主要在於在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一 或數項。本發明亦有關於如下設計形式:前述說明中所述及之個別特徵不實現,特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。 All disclosed features (as single features or feature combinations) are the essence of the invention. Therefore, the disclosed content of this application also includes all the content disclosed in the related/attached priority files (copy of the earlier application), and the features described in these files are also included in the scope of patent application of this application. The ancillary items describe the characteristics of the improvement scheme of the present invention with respect to the prior art with its characteristics (even if the characteristics of the related claims are not included), and its purpose is to make a divisional application on the basis of these claims. The invention given in each claim may further have one of the features given in the foregoing description, especially marked with symbols and/or given in the symbol description Or several items. The present invention also relates to the following design forms: the individual features mentioned in the foregoing description are not realized, especially features that are not necessary for specific applications or can be replaced by other technically equivalent components.
6:腔 6: cavity
10:基板架 10: substrate rack
12:上寬側面 12: Upper wide side
13:承凸 13: bearing convex
14:承載面 14: bearing surface
17:基板 17: substrate
17':基板底側 17': bottom side of substrate
B:厚度 B: thickness
D1:直徑 D1: diameter
D2:直徑 D2: diameter
a:距離 a: distance
h:高度 h: height
Claims (12)
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DE102018131987.8 | 2018-12-12 | ||
DE102018131987.8A DE102018131987A1 (en) | 2018-12-12 | 2018-12-12 | Substrate holder for use in a CVD reactor |
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US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
US6576064B2 (en) * | 1997-07-10 | 2003-06-10 | Sandia Corporation | Support apparatus for semiconductor wafer processing |
US6634882B2 (en) | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
US20030209326A1 (en) | 2002-05-07 | 2003-11-13 | Mattson Technology, Inc. | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
US20040226513A1 (en) * | 2003-05-12 | 2004-11-18 | Applied Materials, Inc. | Chamber for uniform heating of large area substrates |
JP5024382B2 (en) * | 2007-08-03 | 2012-09-12 | 信越半導体株式会社 | Susceptor and silicon epitaxial wafer manufacturing method |
WO2009060912A1 (en) | 2007-11-08 | 2009-05-14 | Sumco Corporation | Epitaxial film growing method, wafer supporting structure and susceptor |
US20100107974A1 (en) * | 2008-11-06 | 2010-05-06 | Asm America, Inc. | Substrate holder with varying density |
JP2013053355A (en) * | 2011-09-05 | 2013-03-21 | Taiyo Nippon Sanso Corp | Vapor phase deposition apparatus |
DE102011055061A1 (en) * | 2011-11-04 | 2013-05-08 | Aixtron Se | CVD reactor or substrate holder for a CVD reactor |
KR20150015714A (en) * | 2013-08-01 | 2015-02-11 | 삼성전자주식회사 | The susceptor and the apparatus including the same |
EP3073521B1 (en) * | 2013-11-22 | 2022-04-20 | Kyocera Corporation | Electrostatic chuck |
DE102015118215A1 (en) * | 2014-11-28 | 2016-06-02 | Aixtron Se | Substrate holding device with isolated support projections for supporting the substrate |
WO2017031106A1 (en) * | 2015-08-18 | 2017-02-23 | Veeco Instruments Inc. | Process-specific wafer carrier correction to improve thermal uniformity in chemical vapor deposition systems and processes |
DE102016103530A1 (en) | 2016-02-29 | 2017-08-31 | Aixtron Se | Substrate holding device with projecting from an annular groove supporting projections |
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