TW202037753A - Substrate holder for use in a cvd reactor - Google Patents

Substrate holder for use in a cvd reactor Download PDF

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TW202037753A
TW202037753A TW108145147A TW108145147A TW202037753A TW 202037753 A TW202037753 A TW 202037753A TW 108145147 A TW108145147 A TW 108145147A TW 108145147 A TW108145147 A TW 108145147A TW 202037753 A TW202037753 A TW 202037753A
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bearing
substrate
diameter
edge
substrate holder
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TW108145147A
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Chinese (zh)
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維德 法蘭西斯科 魯德
馬塞爾 科爾柏格
奧利佛 施昂
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德商愛思強歐洲公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention relates to an apparatus for use in a CVD reactor (1), having a substrate holder (10) having at least three support protrusions (13) arising from a broadside face (12), which have support faces (14) lying in a common plane and having a circle-equivalent first diameter (D1) and which are arranged such that a central zone (Z) of a substrate (17), which is surrounded by an edge zone (R) supported on the support faces (14), has a distance (a) from the broadside face (12). According to the invention, the support protrusions (13) can be arranged directly on the edge of the broadside face (12) or in an edge strip having a radial extension of 600 [mu]m. The support protrusions (13) can furthermore be multilevel.

Description

應用於CVD反應器中的基板架 Substrate rack used in CVD reactor

本發明係有關於一種用於應用在CVD反應器中的裝置,具有一基板架,其包含至少三個起始於寬側面的承凸,該等承凸具有位於共同之平面中之具備第一圓當量直徑的承載面,並係佈置成使得基板之經支撐於承載面上之邊緣區域包圍的中心區域具有與寬側面的距離。 The present invention relates to a device for use in a CVD reactor. It has a substrate holder, which includes at least three bearing projections starting from a wide side surface, and the bearing projections have a first The carrying surface of the equivalent circle diameter is arranged so that the central area surrounded by the edge area of the substrate supported on the carrying surface has a distance from the wide side surface.

前述類型之基板架被應用在用於固持扁平基板的CVD反應器中,其中,自下寬側面對基板架進行加熱。上寬側面將熱散發至貼靠於基板架上之基板。由於基板因熱變形或其他應變而無法平面式地抵靠在基板架寬側上,於是基板架的寬側面上產生承凸,基板的邊緣區域支撐在承凸上。如此一來,基板之邊緣區域被設於圓弧線上之數個承凸點狀支撐。透過熱輻射或熱傳導來進行自基板架之寬側面至基板的熱輸運,其中,熱傳導取決於位於製程室內之氣體之導熱特性,此氣體位於基板之底側與基板架之寬側面之間。與位於承凸之間之區域相比,承凸範圍內之區域特定的熱輸運更大,故在承凸之區域內,在基板表面上會出現更高的溫度。在為基板表面塗佈Ⅲ-V族半導體層時,可能會在承凸處出現不均勻。US 2003/0209326 A1描述過設於基板座之腔之底部邊緣區域內的凹部,其中插入有銷件。插入凹部的銷件構成承凸,其具有直徑約600μm的承載面。基板之底側與基板座之寬側面的 距離在此亦為約600μm。 The aforementioned type of substrate holder is used in a CVD reactor for holding flat substrates, wherein the substrate holder is heated from the lower wide side. The upper wide side dissipates the heat to the substrate leaning on the substrate holder. Since the substrate cannot be flat against the wide side of the substrate holder due to thermal deformation or other strains, a bearing protrusion is generated on the wide side of the substrate holder, and the edge area of the substrate is supported on the bearing protrusion. In this way, the edge area of the substrate is supported by a number of convex points arranged on the arc line. The heat transfer from the wide side of the substrate holder to the substrate is carried out through heat radiation or heat conduction. The heat transfer depends on the thermal conductivity of the gas in the process chamber, which is located between the bottom side of the substrate and the wide side of the substrate holder. Compared with the area located between the protrusions, the area within the protrusions has a greater specific heat transport, so in the area of the protrusions, higher temperatures appear on the substrate surface. When the III-V group semiconductor layer is coated on the surface of the substrate, unevenness may appear in the convex part. US 2003/0209326 A1 describes a recess provided in the bottom edge region of the cavity of the substrate holder, in which a pin is inserted. The pin inserted into the recess constitutes a bearing protrusion, which has a bearing surface with a diameter of about 600 μm. Between the bottom side of the substrate and the wide side of the substrate holder The distance here is also about 600 μm.

US 6,840,767 B2描述過一種具有用於容置基板的支承面的基板座,此支承面由數個均勻地分佈在支承面的範圍內的凸起構成,其中,數個凸起中之每一者皆形成具有約250μm的圓當量直徑的承載面。 US 6,840,767 B2 describes a substrate holder with a supporting surface for accommodating the substrate. The supporting surface is composed of a plurality of protrusions uniformly distributed within the range of the supporting surface, wherein each of the plurality of protrusions Both form a bearing surface with a circular equivalent diameter of about 250 μm.

US 2010/0227455 A1描述過一種包含設於其中之腔的基板座,在腔中設有在邊緣側經支撐的基板。 US 2010/0227455 A1 describes a substrate holder including a cavity provided therein, and a substrate supported on the edge side is provided in the cavity.

為了將待塗佈之基板之表面上之水平溫度梯度最小化,DE 10 2016 103 530 A1已提出:使承凸起始於寬側之構建為凹槽的凹部。呈截錐狀起始於凹部的承凸的圓頂狀端面應與基板之底側接觸,其中,接觸面應具有最大300μm的圓當量直徑。 In order to minimize the horizontal temperature gradient on the surface of the substrate to be coated, DE 10 2016 103 530 A1 has proposed: a concave part constructed as a groove starting from the wide side of the bearing protrusion. The dome-shaped end surface of the truncated cone shape starting from the concave portion should be in contact with the bottom side of the substrate, and the contact surface should have a maximum equivalent circle diameter of 300 μm.

本發明之目的在於:提供用以進一步減小表面中之前述溫度不均勻性的措施。 The object of the present invention is to provide measures to further reduce the aforementioned temperature non-uniformity in the surface.

該目的透過申請專利範圍所給出之發明而達成,其中,附屬項不僅為獨立項所給出之發明的有利改良方案,亦為該目的之獨創解決方案。 This objective is achieved through the inventions given in the scope of the patent application. Among them, the appendix is not only a beneficial improvement scheme of the invention given in the independent item, but also an original solution for the objective.

根據本發明之一作為對在DE 10 2016 103 530 A1中描述之裝置之改良方案的態樣,該承凸係由至少兩個疊置的柱區段構成,其中,最上部的柱區段形成一平整的承載面。該最上部的柱區段可具有承凸之最小的圓當量直徑。該最下部的柱區段可具有承凸之最大的圓當量直徑。在此亦較佳地,該承凸起始於寬側面之一平整區段。但亦可採用以下方案:該最下部的柱區段係被環形凹部、特別是被經倒圓之底部包圍。在總高度超出300μm的情況下,該承凸係構建為兩階式。在 此情形下,該第二下階部之直徑可落在介於1200μm與1500μm之間的範圍內。該上階部之直徑可為300μm,並且特別是小於基板之材料厚度。 According to one aspect of the present invention as an improvement to the device described in DE 10 2016 103 530 A1, the bearing is composed of at least two stacked column sections, wherein the uppermost column section forms A flat bearing surface. The uppermost column section may have the smallest equivalent circle diameter of the bearing. The lowermost column section may have the largest equivalent circle diameter of the bearing. It is also preferable here that the bearing projection starts from a flat section of the wide side. However, the following solution can also be adopted: the lowermost column section is surrounded by an annular recess, in particular by a rounded bottom. When the total height exceeds 300 μm, the convex-bearing system is constructed as a two-step type. in In this case, the diameter of the second lower step portion may fall within a range between 1200 μm and 1500 μm. The diameter of the upper step portion may be 300 μm, and is particularly smaller than the material thickness of the substrate.

根據本發明之作為對在US 2003/0209326 A1中描述之裝置之改良方案的第二態樣,該等承凸與寬側面之緣邊的距離最大為6000μm、3000μm、1000μm、600μm或300μm。該寬側面之經緣邊之延伸界定的直徑較佳略小於經承凸承載之基板的直徑,使得基板藉由邊緣區域伸出寬側面之緣邊。在此突出區域下可設有承載環,其可供抓臂之指部自下方卡住,從而被從基板架取下。藉由此承載環能夠對基板進行操縱。該等承凸可佈置在寬側面之一邊緣條帶中,其具有最大為6000μm、3000μm、1000μm、600μm或300μm的條帶寬度。但較佳地,該等承凸係直接位於緣邊處,其中,緣邊特別是與一周面(其為圓柱面)鄰接。此周面又可與一階部鄰接,該階部特別是適於支撐該承載環。在本發明之具有獨立含義之另一態樣中,該等承凸之高度大於其最大直徑。特定言之,承凸之圓當量直徑最大為300μm,且其高度至少為400μm。該等承凸應直接起始於該寬側面之一平整區段。在此,該寬側面之平整區段至少在一與承凸間隔5000μm的區域內延伸。 According to the second aspect of the present invention as an improvement to the device described in US 2003/0209326 A1, the distance between the bearing protrusions and the edge of the broad side surface is a maximum of 6000 μm, 3000 μm, 1000 μm, 600 μm or 300 μm. The diameter defined by the extension of the wide side surface is preferably slightly smaller than the diameter of the substrate carried by the projection, so that the substrate extends beyond the edge of the wide side surface through the edge area. A bearing ring can be provided under this protruding area, which can be clamped by the fingers of the grasping arm from below, so as to be removed from the substrate holder. With this carrier ring, the substrate can be manipulated. The bearing protrusions may be arranged in an edge strip of one of the wide sides, which has a strip width of 6000 μm, 3000 μm, 1000 μm, 600 μm, or 300 μm at most. However, preferably, the bearing protrusions are directly located at the edge, wherein the edge is particularly adjacent to the peripheral surface (which is a cylindrical surface). This peripheral surface can again adjoin a step, which is particularly suitable for supporting the carrier ring. In another aspect of the present invention with independent meaning, the height of the bearing protrusions is greater than the maximum diameter. In particular, the maximum circle equivalent diameter of the bearing protrusion is 300 μm, and its height is at least 400 μm. The projections should start directly from a flat section of the wide side. Here, the flat section of the broad side surface extends at least in an area separated from the supporting protrusion by 5000 μm.

一種特別是根據本發明的第三態樣(該態樣亦為對根據DE 10 2016 103 530 A1之裝置的改良方案)的裝置提出:所有接觸面皆由在一共同的平面中延伸之承載面構成。本發明之實施方式可具有平整的承載面,其具有最大為600μm、較佳最大為300μm的第一圓當量直徑。承載面之圓當量最小直徑可為150μm或300μm。承凸之高度可落在介於150與400μm之間的範圍內。可採用以下方案:截錐狀承凸之壁部以無曲折點的方式起始於環形凹部。 A device particularly according to the third aspect of the invention (this aspect is also an improvement of the device according to DE 10 2016 103 530 A1) proposes that all contact surfaces are formed by a bearing surface extending in a common plane constitute. Embodiments of the present invention may have a flat bearing surface with a first equivalent circle diameter of at most 600 μm, preferably at most 300 μm. The minimum circle equivalent diameter of the bearing surface can be 150μm or 300μm. The height of the bearing protrusion can fall within a range between 150 and 400 μm. The following solution can be adopted: the wall portion of the truncated cone-shaped convex bearing starts from the annular recess in a manner without bending points.

前述態樣可具有下列可選的特性。該可等於承載面與經寬側面界定之基準平面的距離的高度係大於該平整承載面之圓當量直徑。該圓當量直徑等於具有與該承載面相同的面積的圓的直徑。在一改良方案中,該承凸之最大直徑可小於600μm。直徑在此亦指圓當量直徑,其等於具有與承凸相同的橫截面積的圓的直徑。此外,特別是根據本發明之一自有態樣,承載面之圓當量直徑及/或承凸之最大橫截面之圓當量直徑小於基板之厚度,其中,該基板為扁平體。承凸之高度可為至少100μm、至少200或至少400μm。在本發明之一改良方案中,該承凸之橫截面並非圓形。承凸可具有多邊形平面圖。該平面圖可為六角形或矩形。此外,該承凸可由一柱狀體構成,該柱狀體之平面圖可為圓形或非圓形。但亦可採用以下方案:承凸之橫截面沿背離寬側面的方向減小。據此,承凸之最大橫截面例如可為承凸之基面,承凸藉由該基面起始自寬側面。在此情形下,承凸之最小橫截面為承載面。承凸之橫截面可自寬側面朝向承載面持續減小。但該橫截面亦可分階式減小。據此,該承凸例如可具有兩個階部區段,其分別具有橫截面不同的柱狀形態。該等平整的承載面位於一共同的平面中,該平面對應基板之底側。根據本發明之一較佳方案,該等承凸直接地起始於該寬側面。在此情形下,基準平面穿過承凸之根部延伸。但在本發明之一方案中,該承凸亦可經環狀凹部包圍,如同DE 10 2016 103 530 A1或US 2003/0209326 A1所揭示的那般。在此情形下,基準面穿過凹部之徑向外緣延伸,該凹部可為凹槽。但基準面亦可穿過凹部之最低點延伸。在本發明之一改良方案中,該承凸係材料一致地對應該基板架。該基板架可由碳化矽或包覆石墨構成。為製造本發明之基板架,使用由石墨或尤佳由碳化矽構成之坯料,特別是藉由銑刀對該坯料進行磨料加工。藉由該銑刀例如逐 步地將寬側面加深,其中,承凸保持不變。藉由該方法還能產生階部,可將一支承環附接在該階部上,該支承環用於將經承凸承載之基板取下。此外,該裝置亦可具有基板座,該基板座具有供基板架置入的腔。在一方案中,該基板架自身可實現基板座之功能並具有數個基板載位,該等基板載位分別具有承凸,其佈置在一圍繞中心的圓弧線上。較佳分別設有六個承凸。 The aforementioned aspect may have the following optional characteristics. The height that can be equal to the distance between the bearing surface and the reference plane defined by the broad side surface is greater than the equivalent circle diameter of the flat bearing surface. The circle equivalent diameter is equal to the diameter of a circle having the same area as the bearing surface. In an improved solution, the maximum diameter of the bearing protrusion may be less than 600 μm. The diameter here also refers to a circle equivalent diameter, which is equal to the diameter of a circle having the same cross-sectional area as the bearing projection. In addition, particularly according to an aspect of the present invention, the equivalent circle diameter of the bearing surface and/or the equivalent circle diameter of the largest cross section of the bearing protrusion is smaller than the thickness of the substrate, wherein the substrate is a flat body. The height of the protrusion may be at least 100 μm, at least 200, or at least 400 μm. In an improved solution of the present invention, the cross section of the bearing protrusion is not circular. The bearing projection may have a polygonal plan view. The plan view can be hexagonal or rectangular. In addition, the bearing protrusion can be formed by a columnar body, and the plan view of the columnar body can be circular or non-circular. However, the following scheme can also be adopted: the cross-section of the bearing protrusion decreases in the direction away from the wide side. Accordingly, the maximum cross-section of the bearing protrusion can be, for example, the base surface of the bearing protrusion, from which the bearing protrusion starts from the wide side surface. In this case, the smallest cross section of the bearing is the bearing surface. The cross section of the bearing protrusion can continuously decrease from the wide side to the bearing surface. However, the cross section can also be reduced in steps. Accordingly, the bearing protrusion may have, for example, two step sections, which respectively have columnar shapes with different cross sections. The flat bearing surfaces are located in a common plane corresponding to the bottom side of the substrate. According to a preferred solution of the present invention, the bearing protrusions directly start from the wide side surface. In this case, the reference plane extends through the root of the bearing. However, in one aspect of the present invention, the bearing protrusion can also be surrounded by a ring-shaped recess, as disclosed in DE 10 2016 103 530 A1 or US 2003/0209326 A1. In this case, the reference plane extends through the radially outer edge of the recess, which may be a groove. However, the reference plane can also extend through the lowest point of the recess. In an improved solution of the present invention, the convex-bearing system material uniformly corresponds to the substrate holder. The substrate holder can be composed of silicon carbide or coated graphite. In order to manufacture the substrate holder of the present invention, a blank made of graphite or silicon carbide is used, in particular, the blank is subjected to abrasive processing by a milling cutter. With the milling cutter, for example, one by one Step by step deepen the wide side, where the bearing convexity remains unchanged. With this method, a step can also be produced, and a support ring can be attached to the step, and the support ring is used to remove the substrate carried by the projection. In addition, the device may also have a substrate holder, and the substrate holder has a cavity for mounting the substrate. In one solution, the substrate holder itself can realize the function of the substrate holder and has a plurality of substrate holders, and the substrate holders respectively have bearing protrusions arranged on a circular arc around the center. Preferably, six bearing projections are provided respectively.

1:CVD反應器 1: CVD reactor

2:氣體入口構件 2: Gas inlet component

3:基板座 3: substrate holder

4:製程室 4: Process room

5:製程室頂部 5: The top of the process room

6:腔 6: cavity

7:氣體輸送管線 7: Gas transmission pipeline

8:腔底 8: bottom of cavity

9:加熱裝置 9: heating device

10:基板架 10: substrate rack

11:下寬側面 11: Lower wide side

12:上寬側面 12: Upper wide side

13:承凸 13: bearing convex

13':側面 13': side

14:承載面 14: bearing surface

14':平面 14': plane

15:上區段 15: Upper section

16:下區段 16: lower section

17:基板 17: substrate

17':基板底側 17': bottom side of substrate

18:基準平面 18: Datum plane

19:承載環 19: Carrying ring

20:凹槽,凹部 20: grooves, recesses

20':邊緣 20': Edge

20":頂點線 20": Vertex line

21:階部 21: Stage

22:承載凸肩 22: bearing shoulder

23:突出區域 23: prominent area

24:周面 24: circumference

25:緣邊 25: Edge

A1:區段 A1: Section

B:厚度 B: thickness

D1:直徑 D1: diameter

D2:直徑 D2: diameter

D3:直徑 D3: diameter

R:邊緣區域 R: marginal area

Z:中心區域 Z: central area

a:距離 a: distance

h:高度 h: height

下面結合附圖對本發明之實施例進行說明。其中: The embodiments of the present invention will be described below with reference to the drawings. among them:

圖1為CVD反應器1之示意性橫截面圖, Figure 1 is a schematic cross-sectional view of a CVD reactor 1,

圖2為圖1中之局部Ⅱ的放大圖, Figure 2 is an enlarged view of part Ⅱ in Figure 1,

圖3為圖2中之局部Ⅲ的放大圖, Figure 3 is an enlarged view of part Ⅲ in Figure 2,

圖4為本發明第二實施例如圖3所示之視圖, Figure 4 is a view of the second embodiment of the present invention as shown in Figure 3,

圖5為根據圖3中之線V-V的剖面圖, Figure 5 is a cross-sectional view according to the line V-V in Figure 3,

圖6為本發明第三實施例如圖3所示之視圖,以及 Figure 6 is a view of the third embodiment of the present invention as shown in Figure 3, and

圖7為基板架10之俯視圖,用以闡明承凸13之位置。 FIG. 7 is a top view of the substrate holder 10 to clarify the position of the bearing protrusion 13.

圖1為包含反應器殼體的CVD反應器1的示意性剖面圖,製程室4位於該反應器殼體中。氣體入口構件2伸入製程室4,透過該氣體入口構件能夠將諸如第Ⅲ主族元素之有機金屬化合物以及第V主族元素之氫化物的製程氣體與載氣一起饋送入製程室4。在朝上方向上,藉由視情況經冷卻之製程室頂部5界定製程室4。在朝下方向上,透過由石墨或類似適宜材料構成之基板座3界定製程室4。在基板座3下方設有加熱裝置9,藉由該加熱裝置將熱輸送至基板座3。 Fig. 1 is a schematic cross-sectional view of a CVD reactor 1 including a reactor shell, and a process chamber 4 is located in the reactor shell. The gas inlet member 2 extends into the process chamber 4, through which process gases such as organometallic compounds of main group III elements and hydrides of main group V elements can be fed into the process chamber 4 together with carrier gas. In the upward direction, the process chamber 4 is defined by the top 5 of the cooling process chamber as appropriate. In the downward direction, the process chamber 4 is defined through the substrate holder 3 made of graphite or similar suitable material. A heating device 9 is provided under the substrate holder 3, and heat is transferred to the substrate holder 3 by the heating device.

在基板座3之面向製程室4的頂側上,在一圍繞基板座 3之中心的圓形佈局中設有數個腔6,在該等腔中設有各一基板架10。透過氣體輸送管線7能夠將一載氣饋送入腔6,基板架10貼靠在該載氣上。產生該承載基板架10的氣墊,使得基板架10以置入腔6的方式實施圍繞該基板架之軸線的旋轉。基板架10之底側11可以是平整的。但該底側亦可具有若干空間結構。就此而言,圖式並非遵循比例繪製。 On the top side of the substrate holder 3 facing the process chamber 4, a surrounding substrate holder Several cavities 6 are provided in the circular layout at the center of 3, and a substrate holder 10 is provided in each of the cavities. A carrier gas can be fed into the cavity 6 through the gas delivery pipeline 7, and the substrate holder 10 abuts on the carrier gas. The air cushion that carries the substrate holder 10 is generated, so that the substrate holder 10 rotates around the axis of the substrate holder in a manner of being inserted into the cavity 6. The bottom side 11 of the substrate holder 10 may be flat. However, the bottom side can also have several spatial structures. In this regard, the schema is not drawn to scale.

基板架10具有徑向外側階部21,在該階部上貼靠有承載環19,該承載環具有徑向朝內的承載階部22,以及該承載環透過一突出區域23伸出基板架10之徑向外側區域。承載環19之頂側大致與基板座3之頂側齊平。 The substrate holder 10 has a radially outer step 21 on which a carrier ring 19 is attached. The carrier ring has a radially inward carrier step 22, and the carrier ring extends out of the substrate carrier through a protruding area 23 The radial outer area of 10. The top side of the carrier ring 19 is substantially flush with the top side of the substrate holder 3.

如圖2、3、4及6所示,基板架10具有與下寬側面11相對的上寬側面12,其實質上在一平面中延伸。承凸13起始於上寬側面12之邊緣段。如圖7所示,設有總共六個以均勻的角度分佈圍繞基板架10之中心佈置的承凸13。承凸13具有各一承載面14,其中,所有承凸13之承載面14在一共同的平面中延伸。此平面由基板17之底側17'形成,該基板由基板架10承載。圓盤形基板17具有中心區域Z,其以距離a中空地位於寬側面12上方。僅在邊緣區域R內藉由承凸13承載基板17,其中,基板17之最外緣位於承載凸肩22上方,故可透過抬升承載環19將基板17自基板架10移除。 As shown in FIGS. 2, 3, 4, and 6, the substrate holder 10 has an upper wide side surface 12 opposite to the lower wide side surface 11, which extends substantially in a plane. The bearing protrusion 13 starts from the edge section of the upper wide side surface 12. As shown in FIG. 7, there are a total of six bearing protrusions 13 arranged around the center of the substrate holder 10 with a uniform angular distribution. The bearing protrusions 13 each have a bearing surface 14, wherein the bearing surfaces 14 of all the bearing protrusions 13 extend in a common plane. This plane is formed by the bottom side 17 ′ of the substrate 17, which is carried by the substrate holder 10. The disc-shaped substrate 17 has a central area Z which is located hollow above the wide side surface 12 by a distance a. The substrate 17 is carried by the bearing protrusion 13 only in the edge region R, wherein the outermost edge of the substrate 17 is located above the bearing shoulder 22, so the substrate 17 can be removed from the substrate holder 10 by lifting the bearing ring 19.

在承凸13之如圖3及圖4所示之實施例中,涉及由碳化矽製造之基板架10。基板架10係透過磨料工藝,例如藉由銑刀自實心材料加工出。與此對應地,承凸13係以材料一致的方式與基板架10之塊材連接。承凸13具有六角形平面圖。承凸13之最大橫截面位於承凸13之根部區域內,在該根部區域內,承凸13起始於在一平面中 延伸至承凸13之邊緣的寬側面12。 In the embodiment shown in FIGS. 3 and 4 of the bearing protrusion 13, it involves a substrate holder 10 made of silicon carbide. The substrate holder 10 is processed from a solid material through an abrasive process, for example, a milling cutter. Correspondingly, the bearing protrusion 13 is connected to the block material of the substrate holder 10 in a material consistent manner. The bearing protrusion 13 has a hexagonal plan view. The largest cross-section of the bearing projection 13 is located in the root region of the bearing projection 13, in which the bearing projection 13 starts in a plane The wide side surface 12 extending to the edge of the bearing protrusion 13.

在如圖4所示之實施例中,承載面14具有實質上與承凸13之根部區域之橫截面相同的橫截面。D1表示在一平面中延伸之承載面14的圓當量直徑。D2表示承凸13之在寬側面12中延伸之根部面的圓當量直徑。在本實施例中,圓當量直徑D1與D2一樣大並且為約300μm。但該等直徑亦可達到600μm。承凸13之高度h在此為約400μm。高度h亦可更小,但特別是大於100μm。總共六個承凸13起始於寬側面12之一平整區段。寬側面平面至少在以5mm的半徑圍繞承凸的區域內延伸。較佳地,整個寬側面12不具有階部或者其他凸起或凹部。寬側面12至少近乎平整地延伸,使得在各位置上,其與在具備數學精確性的平面中延伸的基準平面的最大距離為10μm。 In the embodiment shown in FIG. 4, the bearing surface 14 has a cross section that is substantially the same as the cross section of the root region of the bearing protrusion 13. D1 represents the equivalent circle diameter of the bearing surface 14 extending in a plane. D2 represents the circle-equivalent diameter of the root surface of the bearing projection 13 extending in the wide side surface 12. In this embodiment, the circle equivalent diameter D1 is as large as D2 and is about 300 μm. However, the diameter can also reach 600 μm. The height h of the bearing protrusion 13 here is about 400 μm. The height h can also be smaller, but especially greater than 100 μm. A total of six bearing projections 13 start from a flat section of the broad side 12. The broad side plane extends at least in the area surrounding the bearing with a radius of 5 mm. Preferably, the entire wide side surface 12 does not have steps or other protrusions or recesses. The wide side surface 12 extends at least approximately flatly, so that at each position, the maximum distance between it and a reference plane extending in a plane with mathematical accuracy is 10 μm.

圖3示出承凸13之一實施例,該承凸由兩個疊置的柱區段15、16構成。下區段16具有最大橫截面,該橫截面具有約為600μm的圓當量直徑D2。上區段15具有約300μm的圓當量直徑D1。高度h在此亦為約400μm。該二疊置的柱形區段15、16可具有非圓形的,特別是多邊形、六角形或矩形的橫截面。介於上區段15與下區段16之間之階面較佳平行於寬側面12或承載面14延伸。在本實施例中,寬側面12之設計與如圖3所示的設計相同。 FIG. 3 shows an embodiment of the bearing projection 13 which is composed of two superimposed column sections 15, 16. The lower section 16 has the largest cross section with an equivalent circle diameter D2 of about 600 μm. The upper section 15 has an equivalent circle diameter D1 of approximately 300 μm. The height h here is also about 400 μm. The two-stacked cylindrical sections 15, 16 may have a non-circular, in particular polygonal, hexagonal or rectangular cross-section. The step surface between the upper section 15 and the lower section 16 preferably extends parallel to the wide side surface 12 or the bearing surface 14. In this embodiment, the design of the wide side surface 12 is the same as that shown in FIG. 3.

圖6示出承凸13之第三實施例。基板架10在此可由石墨製成,並在成型後塗佈有碳化矽。承凸13在此具有一側面,其沿呈截錐狀之包絡面延伸。該包絡面可為旋轉面。該包絡面特別是為經反轉之錐面。在如圖3及圖5所示之實施例中,承凸13直接起始於一平面,與此不同地,在如圖6所示之實施例中,承凸13起始於沿承凸13之邊緣延伸的凹部20。 FIG. 6 shows a third embodiment of the bearing projection 13. The substrate holder 10 can be made of graphite and coated with silicon carbide after molding. The bearing protrusion 13 here has a side surface which extends along the enveloping surface in the shape of a truncated cone. The envelope surface may be a rotating surface. The envelope surface is especially a conical surface that has been reversed. In the embodiment shown in FIGS. 3 and 5, the bearing projection 13 starts directly from a plane. In contrast, in the embodiment shown in FIG. 6, the bearing projection 13 starts along the bearing projection 13 The edge of the recess 20 extends.

在如圖4及圖6所示之實施例中,承凸13直接位於寬側面12之邊緣24處,在該邊緣處,寬側面12與一由柱面壁形成之周面24鄰接。周面24過渡進入階部21,承凸13位於該階部上。承凸13之徑向背離基板架10之中心的一側由柱面之一區段構成。承凸13之此徑向朝外的壁部係與經承凸13承載之基板17的緣邊間隔一區段A1,其中,此距離可為3至3.5mm。 In the embodiment shown in FIGS. 4 and 6, the bearing projection 13 is directly located at the edge 24 of the wide side surface 12, where the wide side surface 12 is adjacent to a peripheral surface 24 formed by a cylindrical wall. The peripheral surface 24 transitions into the step 21, on which the bearing protrusion 13 is located. The side of the bearing protrusion 13 away from the center of the substrate holder 10 in the radial direction is formed by a section of a cylindrical surface. The radially outward wall of the bearing protrusion 13 is spaced from the edge of the substrate 17 carried by the bearing protrusion 13 by a section A1, wherein the distance can be 3 to 3.5 mm.

如圖6所示之凹部20可沿一弧線延伸,該弧線之中心為承凸13之中心。凹部20之圓形輪廓線之外徑D3在此可落在介於1500μm與2000μm之間的範圍內。凹槽20之深度可為50μm。凹槽20之頂點線20'可界定一基準平面18,自該基準平面出發測量高度h,其在此為約150μm。承載面14之圓當量直徑D1在此同樣可小於300μm。在本實施例中,該圓當量直徑為約150μm。 The concave portion 20 shown in FIG. 6 may extend along an arc, and the center of the arc is the center of the bearing protrusion 13. The outer diameter D3 of the circular contour line of the recess 20 may fall within a range between 1500 μm and 2000 μm. The depth of the groove 20 may be 50 μm. The apex line 20' of the groove 20 can define a reference plane 18 from which the height h is measured, which is about 150 μm here. The equivalent circle diameter D1 of the bearing surface 14 can also be less than 300 μm here. In this embodiment, the equivalent circle diameter is about 150 μm.

基板底側17'與寬側面12的距離a在此可落在100μm的範圍內。寬側面12可除環形凹部20以外皆平整延伸,其中,平面亦指以下面:其略微呈凹面狀延伸,並且在各位置上與具備數學精確性的基準平面偏離最多10μm、最多20μm或最多50μm。 The distance a between the bottom side 17 ′ of the substrate and the wide side surface 12 may fall within the range of 100 μm. The wide side surface 12 can extend flatly except for the annular recess 20, where the plane also refers to the following: it extends slightly in a concave shape and deviates from the reference plane with mathematical accuracy at each position by up to 10μm, up to 20μm or up to 50μm .

在如圖3所示之實施例中,該二階部可具有相同的階部高度。承載面14之圓當量直徑D1在此可小於400μm,較佳小於300μm。但該圓當量直徑亦可大於300μm,並且具有例如600μm的最大值。二階式承凸13之最下部的階部的直徑D2可為1000μm、1200μm甚或1500μm。最下部的階部的圓當量直徑D2特別是小於1500μm、小於1200μm或小於1000μm。 In the embodiment shown in FIG. 3, the second step may have the same step height. The equivalent circle diameter D1 of the bearing surface 14 may be less than 400 μm, preferably less than 300 μm. However, the circle-equivalent diameter may also be greater than 300 μm, and have a maximum value of, for example, 600 μm. The diameter D2 of the lowermost step of the two-step bearing protrusion 13 may be 1000 μm, 1200 μm or even 1500 μm. The equivalent circle diameter D2 of the lowermost step is particularly smaller than 1500 μm, smaller than 1200 μm, or smaller than 1000 μm.

本發明之主要特徵如下:承凸13構成具有高度及直徑的間隔元件,其中,該直徑小於750μm並且較佳為約300μm。承凸 13特別是為基板架10之材料一致的組成部分。該等承凸特別是並非嵌件,而是透過磨料工藝製造。承載元件之數目較佳小於10。承載元件之數目特別是大於或等於3、4、5或6,其中,該等承載元件係徑向均勻地圍繞一中心分佈。此外,承凸13之圓當量直徑可小於其高度h。此外可採用以下方案:基板架10為基板座配置之部件,其中,基板座3具有數個腔,其圍繞基板座3之中心均勻分佈,並且在每個腔中皆設有一基板架。該基板架較佳由矽石墨製成。但該基板架亦可由石墨製成,且隨後被塗佈碳化矽。在一尤佳技術方案中,該承載元件具有二階形狀、截錐形或柱形。 The main feature of the present invention is as follows: the bearing protrusion 13 constitutes a spacer element having a height and a diameter, wherein the diameter is less than 750 μm and preferably about 300 μm. Bearing convex 13 is particularly a component of the same material of the substrate holder 10. These projections are especially not inserts, but are manufactured through abrasive processes. The number of supporting elements is preferably less than 10. The number of load-bearing elements is particularly greater than or equal to 3, 4, 5 or 6, wherein the load-bearing elements are distributed evenly around a center in the radial direction. In addition, the circle equivalent diameter of the bearing protrusion 13 may be smaller than its height h. In addition, the following solution can be adopted: the substrate holder 10 is a component of the substrate holder configuration, wherein the substrate holder 3 has several cavities, which are evenly distributed around the center of the substrate holder 3, and a substrate holder is provided in each cavity. The substrate holder is preferably made of silicon graphite. But the substrate holder can also be made of graphite and then coated with silicon carbide. In a particularly preferred technical solution, the carrying element has a second-order shape, a truncated cone or a cylindrical shape.

前述實施方案係用於說明本申請整體所包含之發明,該等發明至少透過以下特徵組合分別獨立構成相對於先前技術之改良方案,其中,此等特徵組合中的兩項、數項或其全部亦可相互組合,即: The foregoing embodiments are used to illustrate the inventions contained in the application as a whole. These inventions are at least independently constituted by the following feature combinations to form improvements over the prior art, wherein two, several or all of these feature combinations Can also be combined with each other, namely:

一種裝置,其特徵在於:承凸13由至少兩個疊置的柱區段15、16構成,其中,最上部的柱區段15具有形成接觸面的具備第一圓當量直徑D1的平整承載面14,以及最下部的柱區段16具有第二圓當量直徑D2。 A device, characterized in that: the bearing projection 13 is composed of at least two stacked column sections 15, 16, wherein the uppermost column section 15 has a flat bearing surface with a first circle equivalent diameter D1 forming a contact surface 14, and the lowermost column section 16 has a second equivalent circle diameter D2.

一種裝置,其特徵在於:承凸13之最大橫截面之第二圓當量直徑D2小於600μm。 A device characterized in that the second circle equivalent diameter D2 of the largest cross section of the bearing protrusion 13 is less than 600 μm.

一種裝置,其特徵在於:承凸13與寬側面12之緣邊25的距離最大為6000μm、3000μm、1000μm、600μm或300μm。 A device is characterized in that the distance between the supporting protrusion 13 and the edge 25 of the wide side surface 12 is at most 6000 μm, 3000 μm, 1000 μm, 600 μm or 300 μm.

一種裝置,其特徵在於:承凸13係直接佈置在緣邊25處,或佈置在具有最大6000μm、3000μm、1000μm、600μm或300μm之徑向延伸的邊緣條帶內。 A device is characterized in that the bearing projection 13 is directly arranged at the edge 25, or arranged in an edge strip with a maximum radial extension of 6000 μm, 3000 μm, 1000 μm, 600 μm or 300 μm.

一種裝置,其特徵在於:緣邊25與一周面24鄰接,該 周面又與一階部鄰接。 A device, characterized in that: the edge 25 is adjacent to the peripheral surface 24, the The peripheral surface is adjacent to the first step.

一種裝置,其特徵在於:承凸13之側面13'至少局部地沿截錐狀包絡面延伸。 A device is characterized in that the side surface 13' of the bearing protrusion 13 extends at least partially along the truncated cone-shaped envelope surface.

一種裝置,其特徵在於:等同於承載面14與經寬側面12界定之基準平面18的距離的高度h至少為400μm,以及/或者,承載面14具有最大600μm、特別是最大300μm的第一圓當量直徑D1,以及/或者,承凸13直接地起始於寬側面12之一平整區域或一凹部。 A device, characterized in that: the height h equivalent to the distance between the bearing surface 14 and the reference plane 18 defined by the wide side surface 12 is at least 400 μm, and/or the bearing surface 14 has a first circle with a maximum of 600 μm, in particular a maximum of 300 μm The equivalent diameter D1, and/or, the bearing projection 13 directly starts from a flat area or a recess of the wide side surface 12.

一種裝置,其特徵在於:承凸13之橫截面並非圓形,並且特別是具有多邊形、六角形或矩形的平面圖。 A device is characterized in that the cross section of the bearing protrusion 13 is not circular, and particularly has a polygonal, hexagonal or rectangular plan view.

一種裝置,其特徵在於:承凸13係材料一致地對應基板架10,其中,基板架10由石墨或碳化矽構成。 A device is characterized in that the material of the bearing and convex 13 series corresponds to the substrate holder 10, wherein the substrate holder 10 is made of graphite or silicon carbide.

一種方法,其特徵在於:透過磨料工藝從由石墨或碳化矽構成之坯料之實心材料加工出承凸13。 A method, characterized in that the bearing protrusion 13 is processed from a solid material of a blank made of graphite or silicon carbide through an abrasive process.

一種裝置,其特徵在於:承凸13之最大圓當量直徑大於其高度h。 A device characterized in that the maximum circle equivalent diameter of the bearing protrusion 13 is greater than its height h.

一種應用,其特徵在於:經承凸13承載之基板的厚度小於承載面14之第一圓當量直徑D1。 An application is characterized in that the thickness of the substrate carried by the bearing protrusion 13 is smaller than the first equivalent circle diameter D1 of the carrying surface 14.

所有已揭露特徵(作為單項特徵或特徵組合)皆為發明本質所在。故本申請之揭露內容亦包含相關/所附優先權檔案(在先申請副本)所揭露之全部內容,該等檔案所述特徵亦一併納入本申請之申請專利範圍。附屬項以其特徵對本發明針對先前技術之改良方案的特徵予以說明(即使不含相關請求項之特徵),其目的主要在於在該等請求項基礎上進行分案申請。每個請求項中所給出的發明可進一步具有前述說明中給出的、特別是以符號標示且/或在符號說明中給出的特徵中之一 或數項。本發明亦有關於如下設計形式:前述說明中所述及之個別特徵不實現,特別是對於具體用途而言為非必需的或者可被技術上具有相同功效的其他構件所替代之特徵。 All disclosed features (as single features or feature combinations) are the essence of the invention. Therefore, the disclosed content of this application also includes all the content disclosed in the related/attached priority files (copy of the earlier application), and the features described in these files are also included in the scope of patent application of this application. The ancillary items describe the characteristics of the improvement scheme of the present invention with respect to the prior art with its characteristics (even if the characteristics of the related claims are not included), and its purpose is to make a divisional application on the basis of these claims. The invention given in each claim may further have one of the features given in the foregoing description, especially marked with symbols and/or given in the symbol description Or several items. The present invention also relates to the following design forms: the individual features mentioned in the foregoing description are not realized, especially features that are not necessary for specific applications or can be replaced by other technically equivalent components.

6:腔 6: cavity

10:基板架 10: substrate rack

12:上寬側面 12: Upper wide side

13:承凸 13: bearing convex

14:承載面 14: bearing surface

17:基板 17: substrate

17':基板底側 17': bottom side of substrate

B:厚度 B: thickness

D1:直徑 D1: diameter

D2:直徑 D2: diameter

a:距離 a: distance

h:高度 h: height

Claims (12)

一種用於應用在CVD反應器(1)中的裝置,具有一基板架(10),其包含至少三個起始於寬側面(12)的承凸(13),一扁平的基板(17)之邊緣區域(R)能夠在形成接觸面的情況下支撐在該等承凸上而使得該基板(17)之經邊緣區域(R)包圍之中心區域(Z)具有與寬側面(12)的距離(a),其中,該等承凸(13)之高度(h)大於該等接觸面之第一圓當量直徑(D1),該直徑最大為300μm並且大於承凸(13)之最大橫截面之第二圓當量直徑(D2),其特徵在於:該承凸(13)由至少兩個疊置的柱區段(15、16)構成,其中,最上部的柱區段(15)具有形成接觸面的具備該第一圓當量直徑(D1)的平整承載面(14)以及最下部的柱區段(16)具有該第二圓當量直徑(D2)。 A device for use in a CVD reactor (1), having a substrate holder (10), which includes at least three bearing protrusions (13) starting from a wide side surface (12), and a flat substrate (17) The edge area (R) can be supported on the bearing protrusions under the condition of forming a contact surface so that the central area (Z) surrounded by the edge area (R) of the substrate (17) has the same distance as the wide side (12) Distance (a), where the height (h) of the bearing projections (13) is greater than the first circle equivalent diameter (D1) of the contact surfaces, and the diameter is at most 300μm and larger than the maximum cross section of the bearing projections (13) The second equivalent circle diameter (D2) is characterized in that the bearing projection (13) is composed of at least two stacked column sections (15, 16), wherein the uppermost column section (15) has a The flat bearing surface (14) with the first equivalent circle diameter (D1) and the lowermost column section (16) of the contact surface have the second circle equivalent diameter (D2). 如請求項1之裝置,其中,該承凸(13)之最大橫截面之第二圓當量直徑(D2)小於600μm。 The device of claim 1, wherein the second circle equivalent diameter (D2) of the largest cross-section of the bearing protrusion (13) is less than 600 μm. 一種用於應用在CVD反應器(1)中的裝置,具有一基板架(10),其包含至少三個起始於寬側面(12)的承凸(13),該等承凸具有位於共同之平面中之具備第一圓當量直徑(D1)的承載面(14),並係佈置成使得基板(17)之經支撐於承載面(14)上之邊緣區域(R)包圍的中心區域(Z)具有與寬側面(12)的距離(a),其特徵在於:該等承凸(13)與寬側面(12)之緣邊(25)的距離最大為6000μm、3000μm、1000μm、600μm或300μm。 A device for use in a CVD reactor (1) has a substrate holder (10), which includes at least three bearing projections (13) starting from the wide side (12), and the bearing projections have a common The bearing surface (14) with the first circle equivalent diameter (D1) in the plane is arranged such that the central area (R) surrounded by the edge region (R) of the substrate (17) supported on the bearing surface (14) Z) has a distance (a) from the wide side surface (12), characterized in that: the distance between the bearing protrusions (13) and the edge (25) of the wide side surface (12) is a maximum of 6000μm, 3000μm, 1000μm, 600μm or 300μm. 如請求項3之裝置,其中,該等承凸(13)係直接佈置在該緣邊(25)處,或佈置在具有最大6000μm、3000μm、1000μm、600μm或300μm之徑向延伸的邊緣條帶內。 Such as the device of claim 3, wherein the bearing protrusions (13) are directly arranged at the edge (25), or arranged on an edge strip with a maximum radial extension of 6000μm, 3000μm, 1000μm, 600μm or 300μm Inside. 如請求項3之裝置,其中,該緣邊(25)與一周面(24) 鄰接,該周面又與一階部鄰接。 Such as the device of claim 3, wherein the edge (25) and the peripheral surface (24) Adjacent, the peripheral surface is adjacent to the first step. 如請求項1之裝置,其中,該承凸(13)之側面(13')至少局部地沿截錐狀包絡面延伸。 The device of claim 1, wherein the side surface (13') of the bearing protrusion (13) at least partially extends along the truncated cone-shaped envelope surface. 如請求項1之裝置,其中,等同於該承載面(14)與經該寬側面(12)界定之基準平面(18)的距離的高度(h)至少為400μm,以及/或者,承載面(14)具有最大600μm、或最大300μm的第一圓當量直徑(D1),以及/或者,該承凸(13)直接地起始於寬側面(12)之一平整區域或一凹部。 The device of claim 1, wherein the height (h) equivalent to the distance between the bearing surface (14) and the reference plane (18) defined by the broad side surface (12) is at least 400 μm, and/or the bearing surface ( 14) Having a first equivalent circle diameter (D1) of up to 600 μm, or up to 300 μm, and/or, the bearing protrusion (13) directly starts from a flat area or a recessed portion of the broad side surface (12). 如請求項1之裝置,其中,該等承凸(13)之橫截面並非圓形,以及/或者具有多邊形、六角形或矩形的平面圖。 Such as the device of claim 1, wherein the cross section of the bearing protrusions (13) is not circular, and/or has a polygonal, hexagonal, or rectangular plan view. 如請求項2之裝置,其中,該等承凸(13)係材料一致地對應該基板架(10),其中,基板架(10)由石墨或碳化矽構成。 Such as the device of claim 2, wherein the material of the bearing protrusions (13) corresponds to the substrate frame (10) uniformly, wherein the substrate frame (10) is made of graphite or silicon carbide. 一種製造請求項1之裝置的方法,其特徵在於:透過磨料工藝從由石墨或碳化矽構成之坯料之實心材料加工出該等承凸(13)。 A method for manufacturing the device of claim 1, which is characterized in that the bearing protrusions (13) are processed from a solid material of a blank made of graphite or silicon carbide through an abrasive process. 如請求項1之前言或如前述請求項中任一項之裝置,其中,該等承凸(13)之最大圓當量直徑大於其高度(h)。 The device as described in the preamble of claim 1 or any one of the foregoing claims, wherein the largest circle equivalent diameter of the bearing protrusions (13) is greater than the height (h). 一種請求項1之裝置在CVD反應器中的應用,其特徵在於:經該等承凸(13)承載之基板的厚度小於該等承載面(14)之第一圓當量直徑(D1)。 An application of the device of claim 1 in a CVD reactor, characterized in that the thickness of the substrate carried by the bearing protrusions (13) is smaller than the first circle equivalent diameter (D1) of the carrying surfaces (14).
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