TW202035777A - Gas inlet device for a CVD reactor - Google Patents

Abstract

The invention relates to a gas inlet device for a CVD reactor (1) comprising a gas inlet organ that can be fastened to a fastening portion (3) having gas supply conduits (5), said organ comprising multiple gas distribution levels arranged one above the other, each level having a gas distribution wall (6) with gas outlet openings (7) that are fluidically connected to a gas distribution chamber (8) surrounded by the gas distribution wall (6), wherein the mouths (10) of respective gas inlet channels (9.1, 9.2, 9.3, 9.4, 9.5) open into the gas distribution chamber (8) and the gas distribution chambers (8) of different gas distribution levels are separated from one another by a base partition (11). According to the invention, a flow barrier is situated between the mouth (10) of the gas inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) and the gas distribution wall (6). In addition, the gas inlet device consists of multiple discoid gas distribution bodies (4.1, 4.2, 4.3, 4.4) arranged one above the other.

Description

Air inlet device of CVD reactor

The present invention relates to a gas inlet device for a CVD reactor, which includes a gas inlet member that can be fixed on a fixed section with a plurality of gas delivery lines, and the gas inlet member includes a plurality of stacked gas distribution levels. The distribution horizontal planes respectively have a gas distribution wall containing a plurality of exhaust ports, and the gas distribution wall is fluidly connected to the gas distribution chamber surrounded by the gas distribution wall, wherein an air inlet passage is in communication with the gas distribution chamber, and the The gas distribution chamber of the gas distribution level is separated by a separation bottom, wherein the gas inlet channels are especially arranged in a cylindrical central section of the gas inlet member.

The invention also relates to a CVD reactor equipped with such a gas inlet device.

DE 10 2008 055 582 A1 describes a gas inlet member made of quartz. The gas inlet member described in this case has a central body arranged around the graphic axis of the gas inlet member. A plurality of concentrically arranged air inlet passages extend in the central area of the gas inlet member, which communicate with each other through outlets extending in the entire circumference. A plurality of gas distribution chambers surrounding the central section are connected to the outlets of the gas inlet passages, and these gas distribution chambers are separated by the separation bottoms in a plurality of stacked gas distribution horizontal planes. The radial outer edge of each of these gas distribution chambers is surrounded by a gas distribution wall having a plurality of vents, and these vents are used to feed the process gas into the CVD The exhaust port of the process chamber of the reactor is connected. Each of these multiple gas distribution chambers can be fed with a separate process gas. These different process gases can flow into the process chamber connected to the gas inlet member separately at different heights. In the process chamber, a substrate is placed flat on a substrate holder heated from below, which can be coated with a III-V layer or an IV layer or a II-VI layer through the MOCVD process.

DE 100 29 110 B4, EP 3 036 061 B1, DE 20 2017 002 851 U1 and DE 10 2018 202 687 A1 disclose methods for structuring quartz bodies. First, a laser beam is used to process a quartz blank with a polished surface. During this process, the laser beam generates ultrashort pulses and is focused. The focus is like writing movement, for example, line by line, moving through the volume of the quartz blank. In the focal point, the laser beam reaches a certain intensity above a threshold intensity, where a material transformation occurs in the quartz material. The converted material can then be removed through a liquid etchant (eg, caustic potassium solution). According to the prior art, this method can be used to manufacture the liquid channel for the nozzle body of the spray head or spray can. What is also known to us is the cavity structure in the components of the manufacturing projection exposure facility. What is also known to us is that this method, also known as SLE (selective laser-induced etching), is used to manufacture microchannels in transparent parts made of quartz glass, borosilicate glass, sapphire and ruby. , Form drilling and forming incision. In addition, DE 10241964 A1, DE 10247921 A1, DE 102014104218 A1 and US 2009/0260569 A1 are also prior art.

The purpose of the present invention is to improve the aforementioned type of gas inlet member to facilitate its use, wherein the gas inlet member is especially designed to make it easy to operate, and also designed to make it technically easy to manufacture and install. The present invention should also provide a method for realizing the technical solution of the gas inlet component that has not been made so far.

This objective is achieved through the invention given in the scope of the patent application, in which the appendix is not only a beneficial improvement plan of the invention given in the parallel claims, but also an original solution for this objective.

According to the first aspect of the present invention, the present invention first and essentially proposes that at least one of the plurality of stacked gas distribution levels preferably has a flow barrier. The flow barrier may extend through the gas distribution chamber so that the flow barrier divides the gas distribution chamber into an upstream section and a downstream section adjacent to the outlet of the air inlet channel. The downstream section may adjoin another flow barrier. The downstream section can also adjoin the gas distribution wall. The flow barrier is preferably annular, and more preferably annularly surrounds a central section with the outlet of the intake passage. The flow barrier can also be adjacent to the gas distribution wall. The flow barrier wall has a plurality of ventilation channels which are connected with the ventilation holes of the gas distribution wall. The ventilation passages have a smaller cross section than the ventilation holes. The vent passages may be vent holes for the process gas to flow from the upstream section of the gas distribution chamber into the downstream section of the gas distribution chamber. The flow barrier forms a pressure barrier, so there is a greater air pressure on the upstream side of the flow barrier than on the downstream side of the flow barrier. In this way, the gas flow discharged from the flow barrier is uniformized on the exhaust surface of the flow barrier. The air vents are preferably arranged substantially evenly distributed on the exhaust surface of the flow barrier. The exhaust surface of the flow barrier is preferably the same as the exhaust surface of the gas distribution wall as the peripheral surface of a certain cylinder, especially the side surface. The diameter of the openings may be less than 0.1 mm, less than 0.2 mm, less than 0.5 mm, less than 1 mm, less than 2 mm, or less than 3 mm. The ventilation channel of the flow barrier can also be a gap.

According to the second aspect of the present invention, each of the multiple stacked gas distribution levels is constituted by a disc-shaped gas distribution section, wherein the gas distribution section is preferably constituted by a gas distribution body/gas distribution section . The gas distribution section may have a disc shape. The gas distribution wall can be connected to the separation bottom in a uniform or material-bonded manner. It is a disc shape from the bottom. A central section can be extended from the separation bottom. The central section is particularly in the shape of a support and forms the outlet of the air inlet passage communicating with the gas distribution chamber. The central section may have a wide side facing upwards, especially extending in a plane, wherein the upper edge of the gas distribution wall may also extend in this extending plane. In particular, the gas distribution bodies/gas distribution sections are substantially the same in structure. It has a bottom side which is preferably flat. The gas distribution bodies/gas distribution sections can be stacked together so that the wide side of the central section of the lower gas distribution body/gas distribution section is flat against the upper gas distribution body/gas distribution section Separate the bottom on the bottom side. The top side of the gas distribution wall pointing upwards, especially the bottom side of the separation bottom, can also be sealed tightly, so that through the stacking of at least two gas distribution bodies/gas distribution sections up and down, the gas distribution chamber faces downwards And the upward direction is each closed by a separate bottom. The gas distribution chambers are preferably exposed only in the radial direction, wherein the gas distribution chamber is exposed through the vent of the gas distribution wall radially outward, and passes through the outlet of the inlet passage radially inward. According to another aspect, at least a part of the gas distribution bodies/gas distribution sections has a through hole in its central section. The let-through hole is exposed toward the upper wide side and the bottom side of the separation bottom, so that the let-through hole can connect the outlet of the gas channel of the lower gas distribution body/gas distribution section and the upper gas distribution body/gas distribution section The allow through holes are connected together. As a result, a plurality of stacked gas passage holes form an air inlet passage.

Another aspect of the present invention relates to the arrangement of the central opening in the gas inlet member. The central opening can be a flushing channel or a fixing opening for fixing screws.

Another aspect of the present invention relates to the fixing of the gas inlet member in the fixing section. The fixing section may be fixed on the cover of the reactor wall, wherein, in order to maintain the reactor, the cover may be separated from the lower part of the reactor shell. Over here During the process, take out the gas inlet component from the self-made process chamber. According to the present invention, the gas inlet member is fixed on the fixing section by a fixing member passing through the fixing opening of the gas inlet member. The gas distribution levels are particularly composed of a gas distribution body/gas distribution section substantially in the shape of a disc. The fixing opening for accommodating the fixing element extends through the gas distribution bodies/gas distribution sections, and the fixing element can be a screw. The fixed opening may be a central opening extending in the central section of the gas distribution bodies/gas distribution sections. The gas distribution bodies/gas distribution sections can be connected by material bonding. However, it can also be connected uniformly. Therefore, the entire gas inlet member can be multi-component. However, it can also be made in one piece. The gas inlet member is preferably constructed as a rotationally symmetric body and has a central fixed opening, wherein a plurality of air inlet passages can extend around the fixed opening in the circumferential direction, which communicate with mutually different gas distribution levels. As an alternative to the central fixed opening or in combination with the central fixed opening, a number of distributed eccentric fixed openings can also be provided to fix the gas inlet member on the fixed surface. The decentralized fixing openings can be arranged in particular on the flange section radially projecting from the gas distribution wall. The flange section is used to fix the gas inlet member on a certain carrier.

According to another aspect of the present invention, the many intake passages formed by a cylindrical central section of the gas inlet member are not arranged concentrically, but are arranged circumferentially around a certain axis separated from each other, and the axis may be a graphic axis . According to the present invention, the air intake passages are arranged side by side in a cross-sectional plane passing through the central section. The outlets of different intake passages are arranged to be staggered from each other in the circumferential direction around the central section. The outlets preferably point in the radially outer direction. Especially in this technical solution, the central section is surrounded by at least one flow barrier, so that from the vent extending along the circumferential surface of the flow barrier, a gas flow that is substantially evenly distributed in the circumferential direction can flow out, which is related to the gas distribution. The downstream section of the chamber is connected, and the process gas can flow into the process chamber from the downstream section through the through hole of the gas distribution wall.

The gas inlet member adopting the aforementioned construction scheme of the present invention may be composed of quartz. However, it can also be composed of metal, especially stainless steel. In the case where the gas inlet member is made of stainless steel or another metal, it is preferable to adopt a multi-component manufacturing solution, wherein the components of the gas inlet member are connected in a form-fitting manner (for example, through a screw connection), or materially joined Ground (for example, through welds). The vents can be made by drilling. In a preferred technical solution of the present invention, the gas inlet member is made of quartz. In this case, the components of the gas inlet member, namely, the gas distribution wall, the separating bottom, the support-like central section, and the flow barrier are manufactured separately from each other, and then the components are joined by suitable materials (such as borosilicate Glass) connected together. In another preferred technical solution, the gas inlet member is composed of a plurality of disc-shaped stacked gas distribution bodies, and the gas distribution bodies can adopt an integrated construction scheme. The gas distributors can be processed by a disc-shaped quartz body, and for this purpose, the SLE method (selective laser-induced etching) is particularly used. When using this method, the first process step is to perform local material conversion on the homogeneous quartz starting material. To this end, an ultra-short pulse laser beam is focused on a micron-level focal point, where the focal point is moved in a manner of writing through the volume of the quartz body through the movement of the laser beam relative to the quartz workpiece. Transform the quartz material in the focal point of the laser beam through a multiphoton process. An etching fluid can be used to remove the converted material in the second process step. The etching fluid is preferably a liquid such as KOH. In this way, the gas distribution wall, its gas passage hole, the center support, its gas delivery pipeline, and the flow barrier between the central section and the gas distribution wall and its passage can be made in the disc-shaped quartz matrix. hole. Subsequently, the disc-shaped gas distribution bodies/gas distribution sections made of the aforementioned method and made of the same material can be stacked together, and especially connected by material bonding. In a particularly preferred embodiment of the present invention, the materials of the gas distribution systems are uniformly connected. The above-mentioned SLE method is also used to manufacture this integrated It is a gas inlet member made of a single quartz blank. When using this manufacturing method, first, a solid quartz body with a polished surface is made. Subsequently, a focused laser beam irradiates its many cavities. Then, the irradiated material is removed with an etching fluid. In the case where the gas inlet member has the aforementioned flange section, the flange section can be connected to the gas distribution bodies in a consistent material, and can also be made by the SLE method.

1: CVD reactor; reactor shell

2: Gas inlet component

3: Fixed section

3': fixed surface

3": (down) section

3''': (upper) section

4.1: Gas distribution body/gas distribution section

4.2: Gas distribution body/gas distribution section

4.3: Gas distribution body/gas distribution section

4.4: Gas distribution body/gas distribution section

4.5: Gas distribution body/gas distribution section

5: Gas transmission pipeline

6: Gas distribution wall

7: Exhaust port

8: Gas distribution room

8': (gas distribution chamber) (downstream) section; middle cavity

8": (gas distribution chamber) (up/downstream) section; middle cavity

8''': (gas distribution chamber) (upstream) section; middle cavity

9.1: intake channel

9.2: intake channel

9.3: intake channel

9.4: intake channel

9.5: intake channel

10: Exit

11: Separate the bottom

12: Flow barrier

12': Flow barrier

12": Flow barrier

13: Vent hole/mouth

14: Ventilation channel; ventilation hole

14': ventilation channel; ventilation hole

14": ventilation channel

15: central section; support

15': (center section/support) wide side

16: allow through hole

17: (fixed) opening

17': opening; flushing channel

18: bezel

19: substrate holder

20: Process room

21: substrate

22: Gas outlet

23: The top of the process room

24: heating device

25: (substrate holder) recess

26: exhaust port

27: fixed opening

28: Nut

29: Spring

30: fixing screw

31: bottom plate

32: Support plate

33: Support tube

34: diffusion barrier

35: fixed opening

36: Flange section

Fig. 1 is a longitudinal cross-sectional view of a substantially schematic structure of a CVD reactor. The CVD reactor has the gas inlet member 2 of the present invention of the first embodiment.

Fig. 2 is a perspective perspective view of five gas distribution bodies 4.1, 4.2, 4.3, 4.4, and 4.5, which are stacked to form the gas inlet member 2.

Figure 3 is a view of a gas inlet member.

4 is a schematic diagram of a second embodiment of the gas inlet member in the view shown in FIG. 1. FIG.

Fig. 5 is an enlarged view of part V in Fig. 4.

Fig. 6 is a cross-sectional view taken along the line VI-VI in Fig. 4;

Fig. 7 is a schematic diagram of the gas inlet member of the second embodiment of the present invention.

Fig. 8 is a view similar to Fig. 5 of another embodiment of the gas inlet member.

Fig. 9 is a view similar to Fig. 5 of another embodiment of the gas inlet member.

The embodiments of the present invention will be described below with reference to the drawings. FIG. 1 substantially schematically shows the structure of a CVD reactor. A CVD deposition process can be implemented in the process chamber 20 of the CVD reactor, in which a semiconductor layer, in particular, can be deposited on a plurality of substrates 21. The substrate 21 may be composed of III-V compound, silicon, sapphire or other suitable materials. One or more layers are deposited on the substrate, which may be composed of elements of main group IV, main group III-V, or main group II-VI. Through the gas inlet member 2, different process gases are introduced into the process chamber 20 by means of a carrier gas (such as H ₂ ) or a rare gas. The process gases may contain the hydrides of the V main group and the IV main group or the first Organometallic compounds of main group IV or main group III. The substrate holder 19, which carries the substrate 21 and is made of coated graphite or similar material, is heated from bottom to top by the heating device 24 to the process temperature, so that it is fed into the center of the process chamber 20 by the gas inlet member The process gas is thermally decomposed on the surface of the substrate arranged in a ring around the center to form a single crystal layer. The process gas flowing through the process chamber 20 in the radial direction exits the process chamber 20 through a gas outlet 22 surrounding the substrate holder 19, and the gas outlet is connected to a vacuum pump not shown.

The substrate holder 19 is placed on the support plate 32, and the latter is carried by the support tube 33. By means of components not shown, the substrate holder 19 shown only schematically in FIG. 1 can rotate around a certain axis.

Reference numeral 34 denotes a diffusion barrier between the heating device 24 and the substrate holder 19.

A process chamber top 23 is provided in the reactor shell 1, and the fixed section 3 penetrates the process chamber top to extend into the process chamber 20. A gas inlet member 2 is fixed on the fixing section 3 which may be made of metal, especially stainless steel.

The gas inlet member 2 may be composed of metal, particularly stainless steel. However, the gas inlet member 2 is preferably made of quartz. The gas inlet member 2 may be composed of metal, especially non-ferrous metal or stainless steel. However, the gas inlet member 2 is preferably made of ceramic material, more preferably made of quartz.

In the gas inlet member 2 shown in FIG. 1, the lower section of the gas inlet member 2 having a plurality of exhaust ports is inserted in the recess 25 of the substrate holder 19. Gas inlet The upper part of the member 2 forming a flange section 36 can be connected to the lower area in a consistent material. A through hole forming the flushing channel 17 ′ passes through the center of the gas inlet member 2. The reference symbol 35 schematically represents a fixing opening, which is used to fix the gas inlet member 2 on the carrier by a screw passing through the fixing opening 35.

In the embodiment shown in FIG. 4, a fixed section 3 is shown, which has a lower section 3" and an upper section 3"'. The section 3" can also be a component of the same material of the gas inlet member 2 here. . Here, a number of fixing screws are shown in the fixing opening 35, which are screwed into the threaded holes of the upper section 3"'.

The fixing section 3 has a substantially flat fixing surface 3 ′, which is directed downward, that is, directed to the substrate seat 19. In this embodiment, five gas channels arranged around the center are provided in the central area of the fixed surface 3', which are respectively connected to one of the gas inlet channels 9.1, 9.2, 9.3, 9.4, and 9.5 of the gas inlet member 2. The intake passages 9.1, 9.2, 9.3, 9.4, 9.5 surround the fixed opening 27, and a nut 28 is supported in the fixed opening in a rotationally fixed manner, which is supported on a spring 29. The threaded rod of the fixing screw 30 is screwed into the nut 28, and the screw head of the fixing screw is supported on the bottom plate 31, which is especially made of quartz. Between the bottom plate 31 extending into the recess 25 of the substrate holder 19 and the fixing surface 3'of the fixing section 3, there are five disc-shaped gas distributors 4.1, 4.2, 4.3, 4.4 and 4.5, and their structures are substantially the same. However, the structure of the center section 15 is different. The bottom plate 31 can also be made of ceramic materials, non-ferrous metals, especially stainless steel. The stacked gas distributors 4.1 to 4.5 are used for different purposes. Cl ₂ used for cleaning the process chamber 20 can be fed into the process chamber 20 through the two upper gas distributors 4.1 and 4.2. The process gas can be fed into the process chamber 20 through the gas distributor 4.3 to 4.5 below.

The figure does not show a seal for isolating the upper edge of the uppermost gas distributor 4.1 from the fixing surface 3'. The section indicated by 3" in Figure 4 can form a sealed adapter Device.

The gas distribution body/gas distribution sections 4.1, 4.2, 4.3, 4.4, and 4.5 shown in Figure 2 each have a disc-shaped bottom plate, which is formed to stack the stacked gas distribution bodies 4.1, 4.2, 4.3, 4.4, and 4.5. Separate bottom 11 spaced apart from each other.

Taking the circular edge of the separating bottom 11 as a starting point, an annular gas distribution wall 6 extends with a plurality of evenly arranged vent holes 13. The diameter of the vent hole 13 is less than 3 mm, particularly less than 1 mm. The vent holes 13 extending radially communicate with an exhaust port 7 respectively. The height of the gas distributors 4.1, 4.2, 4.3, 4.4, 4.5 measured along the axis of the gas inlet member 2 (relative to the graphic axis) can be 5 mm to 2 cm. The width of the gas distribution wall 6 measured along the radial direction (relative to the graph axis) can also be 0.5 cm to 2 cm. The wall thickness of the gas distribution wall 6 may also be less than 0.5 cm, especially 1 mm.

The gas distribution wall 6 surrounds the gas distribution chamber 8, and the gas distribution chamber extends around the central section 15. The gas distribution chamber 8 is divided into three annular sections 8', 8" and 8"' in this embodiment. The first section 8'of the gas distribution chamber 8 extends from the gas distribution wall 6 to the gas distribution wall 6 Concentrically arranged flow barriers 12. In the radial interior of the section 8'surrounded by the flow barriers 12 of the gas distribution chamber 8, there is a second flow barrier 12' which is also arranged concentrically with the gas distribution wall 6, which surrounds The section 8'" of the gas distribution chamber 8 adjacent to the central section 15. The flow barriers 12, 12' and the gas distribution wall 6 have the same height, and in this embodiment also have the same radial width. Two phases The distance between adjacent flow barriers 12, 12', or between the central section 15 and the flow barrier 12', or between the flow barrier 12 and the gas distribution wall 6 is greater than the distance between the flow barriers 12, 12' or the gas distribution wall 6 Wall thickness. The radial widths of the sections 8', 8" and 8"' of the gas distribution chamber 8 are especially greater than 1 cm. The wall thickness of the flow barriers 12, 12' can be different. These wall thicknesses can also be large The radial extent of the intermediate cavity 8', 8", 8"' between the flow barriers 12, 12'. The radial widths of the sections 8', 8" and 8"' of the gas distribution chamber 8 are also Can be less than 5mm.

In the embodiment shown in FIG. 9, the flow barrier 12 ′″ is even adjacent to the gas distribution wall 6.

In the embodiment shown in Figure 2, the annular flow barriers 12, 12' have vent holes 14, 14' evenly distributed in the circumferential direction. The diameter of the vent holes 14 and 14 ′ can be equal to the diameter of the vent hole 13. The diameter of the vent hole 14' of the inner flow barrier 12' may also be smaller than the diameter of the vent hole 14 of the outer flow barrier 12, and the diameter of the vent hole 13 of the gas distribution wall 6 may be larger than the vent hole 14 of the flow barrier 12 The diameter. The flow barriers 12, 12' generate a pressure difference between the upstream section and the downstream section of the gas distribution chamber 8.

In particular, the vent holes 14, 14' of the flow barriers 12, 12' are staggered and not aligned with each other. The same is true for the vent holes 14 of the flow barrier 12 and the vent holes 13 of the gas distribution wall 6. The vent holes 14 and the vent holes 13 are staggered and not aligned.

The central section 15 is constructed as a support and has the same axial height as the flow barrier 12, 12' or the gas distribution wall 6. Therefore, the top side of the flow barrier 12, 12' and the gas distribution wall are in the same plane , And the wide side of the support 15 extends in the plane.

Each support has an outlet 10, through which the inlet channels 9.1, 9.2, 9.3, 9.4, and 9.5 series of the corresponding gas distribution bodies 4.1, 4.2, 4.3, 4.4 and 4.5 and the gas distribution chamber 8 are allocated The radially inner section 8" is connected. The outlet 10 can extend from the top side of the separation bottom 11 to the bottom side of the separation bottom 11 of the upper gas distributor.

In the embodiment shown in FIG. 4, the uppermost gas distribution body 4.1 directly connected to the fixed surface 3'has four through holes arranged circumferentially around the fixed opening 17 16, which are respectively allocated to an intake channel 9.2, 9.3, 9.4, 9.5. The inlet passage 9.1 allocated to the uppermost gas distribution body/gas distribution section 4.1 is connected to the outlet 10, and a baffle 18 is provided in front of the outlet.

In the embodiment shown in FIG. 1, the top side of the uppermost gas distribution body 4.1 can be materially connected to the flange section 36 uniformly, in which a plurality of gas delivery lines 5 extend.

Viewed from the top down, the second gas distribution body 4.2 has only three let-through holes 16, which belong to the intake channels 9.3, 9.4 and 9.5 respectively. The air inlet passage 9.2 communicates with the outlet 10 here, and a baffle 18 is also provided in front of the outlet, and it is arranged in a circumferential direction staggered from the outlet 10 of the gas distributor 4.1.

The gas distribution body 4.3 located below the gas distribution body 4.2 only has two let-through holes 16 which are allocated to the air inlet channels 9.4 and 9.5. The air inlet passage 9.3 is here connected with the outlet 10, and the outlet is staggered from the outlet 10 of the gas distribution body 4.2.

The gas distribution body 4.4 located below the gas distribution body 4.3 has only one let-through hole 16, which is allocated to the air inlet channel 9.5. The air inlet passage 9.5 is here connected with the outlet 10, and the outlet is circumferentially staggered from the outlet 10 of the air inlet passage 4.3.

The lowermost gas distribution body 4.5 does not have a through hole 16. In the central section 15 of the lowermost gas distribution body 4.5, the air inlet passage 9.5 communicates with the outlet 10 that is also circumferentially staggered.

The outlets 10 of all the gas distributors 4.1 to 4.5 are connected with different azimuth directions relative to the graphic axis of the gas inlet member 2.

A bottom plate 31 is provided below the lowermost gas distribution body/gas distribution section 4.5, which has a settling of the screw head of the fixing screw 30.

As an advantageous solution, the gas inlet member 2 can be separated from the fixing section 3 only by loosening the fixing screw 30.

As another advantageous solution, each of the gas distribution bodies 4.1, 4.2, 4.3, 4.4, and 4.5 can be processed "entirely" from a quartz blank. As another advantageous solution, the entire gas inlet member 2 together with the gas distribution bodies 4.1, 4.2, 4.3, 4.4, and 4.5, which are materially connected in this case, can be processed from a single blank. In this case, the gas distribution bodies 4.1, 4.2, 4.3, 4.4, and 4.5 become gas distribution sections in which the material of the gas inlet member 2 is uniformly connected.

Preferably, the aforementioned SLE method is used to manufacture the gas inlet member 2, in which a high-intensity focused and ultra-short pulse laser beam is used to change the material of several volume regions of the quartz blank in a certain writing manner. These areas of equal volume refer to the vent holes 13, the vent holes 14 and 14', the sections 8', 8", 8"' of the gas distribution chamber 8, the air inlet channels 9.1, 9.2, 9.3, 9.4, 9.5, The outlet 10 of the channel and the fixed opening 17. After the material is converted, the converted material is separated from the quartz body by an etching solution. The embodiment of the gas inlet member 2 shown in Figure 1 can be made from a blank by the SLE method as a whole to make.

As a particularly advantageous solution, this manufacturing method can minimize the parts to be installed.

The embodiment shown in FIG. 7 is a gas inlet member 2 with two stacked gas distribution chambers 8, wherein the gas distribution chambers 8 are divided into two sections by the flow barrier 12, namely the upstream section 8" And the downstream section. A plurality of gas distribution chambers can also be arranged stacked, which can be fed by a gas channel. Each gas distribution chamber 8 is connected to a gas channel 9.1, 9.2. The gas inlet member 2 is substantially The cylindrical body has a number of vent holes 13, 14, 14' on its cylindrical side, thereby forming a gas distribution wall 6. The two gas distribution chambers 8 are separated by a separation bottom 11. The bottom plate 31 forms the bottom The bottom of the gas distribution chamber 8.

The gas inlet member 2 is composed of an integrated quartz component. Many cavities are made by SLE method.

FIG. 8 shows another solution of the gas inlet member. In this gas inlet member, the flow barrier 12 has a height smaller than that of the gas distribution wall 6. A ventilation channel 14" is formed between the bottom side of the separation bottom 11 and the top side of the annular flow barrier 12. The ventilation channel here refers to a surrounding gap. In a solution not shown, the gap may also be along the azimuthal direction Are separated by connecting pieces.

In the embodiment shown in FIG. 9, the flow barrier 12" is adjacent to the gas distribution wall 6. In this embodiment, the vent hole 14 with a smaller cross section is connected to the vent hole 13 with a larger cross section extending to the exhaust port 7. Connected.

The flow barriers 12, 12', 12" appearing in these embodiments form a pressure barrier. The outlets 10 of the inlet channels 9.1 to 9.5 and the gas distribution wall 6 are arranged eccentrically. Therefore, the outlets and the vents 13 The flow distance is different. In order to prevent the eccentric arrangement of the outlet 10 from causing the gas flow from the exhaust port 7 to enter the process chamber 20 unevenly, the ventilation channels 14, 14', 14" are dimensioned so that the gas distribution The pressure inside the chamber 8 is greater than that outside the gas distribution chamber 8, and this overpressure is sufficient to make the flow barriers 12, 12', 12" homogenize the flow of the process gas entering the process chamber 20. In other words: it is formed by a cylindrical outer surface Within the entire circumference of the exhaust surface, the same amount of gas per unit area flows into the process chamber.

The foregoing embodiments are used to illustrate the inventions contained in this application as a whole. These inventions are at least independently constituted by the following feature combinations to form improvements over the prior art. Among them, two, several or more of these feature combinations All can also be combined with each other, namely:

An air inlet device, characterized in that: in at least one gas distribution chamber 8, between the outlet 10 of the air inlet passages 9.1, 9.2, 9.3, 9.4, 9.5 and the gas distribution wall 6, there are one or more vents extending At least one first flow barrier 12, 12' of the channel 14, 14'.

An air intake device is characterized in that: flow barriers 12, 12' surround a central section 15 with outlets 10 of air intake channels 9.1, 9.2, 9.3, 9.4, and 9.5.

An air intake device, characterized in that: at least two flow barriers 12, 12' are arranged in sequence along the flow direction, wherein the at least two flow barriers 12, 12' and especially the gas distribution wall 6 surround the central section 15 concentric arrangement.

An air intake device, characterized in that: at least one flow barrier 12, 12' divides the gas distribution chamber 8 into an upstream section 8", 8"' and a downstream section 8', 8", or the flow barrier 12" has A number of air passages 14 which are adjacent to the gas distribution wall 6 and communicate with the exhaust ports 7 and have a large cross section of air holes 13.

An air intake device, characterized in that: each gas distribution level is constructed as a disc-shaped gas distribution section 4.1, 4.2, 4.3, 4.4, 4.5, on the gas distribution section, the gas distribution wall 6 and the separation bottom 11 The edges are connected at least through a hermetic abutment, and a central section 15 extends from the separating bottom 11. The central section has an outlet 10 of air inlet channels 9.1, 9.2, 9.3, 9.4, and 9.5, in which the gas is distributed below The upwardly directed wide side 15' of the central section 15 of the sections 4.2, 4.3, 4.4, and 4.5 is flatly abutted on the bottom side of the separation bottom 11 of the upper gas distribution section 4.1, 4.2, 4.3, and 4.4 or with respect to it Connected, and, one of the through holes 16 of the central section 15 of the upper gas distribution section 4.1, 4.2, 4.3, 4.4 is connected to the inlet passages 9.1, 9.2, of the lower gas distribution section 4.2, 4.3, 4.4, 4.5 9.3, 9.4, 9.5 outlet 10 fluid Connected and exposed to the upper wide side 15'.

An air inlet device is characterized in that the material of the separating bottom 11 is uniformly connected with the central section 15 and/or the gas distribution wall 6.

An air intake device is characterized in that the central section 15 is composed of a seat.

An air inlet device, characterized in that: each gas distribution level is composed of disc-shaped gas distribution sections 4.1, 4.2, 4.3, 4.4, 4.5, and is provided with openings 17, 17 extending through the entire gas inlet member 2 '.

An air intake device is characterized in that the opening 17 forms a fixed opening for fixing the gas inlet member 2 on the fixed section 3, or the opening 17 forms a flushing channel 17'.

An air intake device is characterized in that: a plurality of stacked disc-shaped gas distribution sections 4.1, 4.2, 4.3, 4.4, 4.5 are especially gas distribution bodies connected by the same material or material joints.

An air intake device, characterized in that: a plurality of air intake passages 9.1, 9.2, 9.3, 9.4, 9.5 are arranged side by side in a cross-sectional plane passing through the central section 15, and the air intake passages 9.1, 9.2, 9.3 are different from each other The outlets 10 of 9.4, 9.5 are staggered around the central section 15 in the circumferential direction.

An air intake device is characterized in that the air intake passages 9.1, 9.2, 9.3, 9.4, and 9.5 are arranged around a fixed opening 17 in the center.

An air inlet device, characterized in that: the gas inlet member 2 is made of quartz, and a plurality of gas distribution bodies/gas distribution sections 4.1, 4.2, 4.3, 4.4, 4.5 integrated with materials or the gas inlet member 2 series integrated with materials It is made by selective laser etching, in which material conversion is performed in the focus of the focused laser beam, and the etching flow The body removes the converted material.

A method, characterized in that: a plurality of gas distribution bodies 4.1, 4.2, 4.3, 4.4, 4.5 or gas inlets having multiple gas distribution sections 4.1, 4.2, 4.3, 4.4, 4.5 are manufactured integrally by selective laser etching Component 2.

A method is characterized in that: the outlet 10 is arranged inside the gas distribution chamber 8, so that the process gas flow discharged therefrom can pass through different lengths and flow to the flow distances of the vent holes 13, and at least one of the gas distribution chambers 8 The flow barriers 12, 12', 12" cause the process gas discharged from the exhaust ports 7 to be uniform.

All disclosed features (as single features or feature combinations) are the essence of the invention. Therefore, the disclosure content of this application also includes all the content disclosed in the related/attached priority files (copy of the previous application), and the features described in these files are also included in the scope of the patent application of this application. The ancillary items describe the characteristics of the improvement scheme of the present invention with respect to the prior art with its characteristics (even if the characteristics of the related claims are not included), and its purpose is to make a divisional application on the basis of these claims. The invention given in each claim may further have one or several of the features given in the foregoing description, especially marked with element symbols and/or given in the symbol description. The present invention also relates to the following design forms: the individual features described in the foregoing description are not realized, and are especially unnecessary for specific purposes or features that can be replaced by other technically equivalent components.

2: Gas inlet component

4.1: Gas distribution body/gas distribution section

4.2: Gas distribution body/gas distribution section

4.3: Gas distribution body/gas distribution section

4.4: Gas distribution body/gas distribution section

4.5: Gas distribution body/gas distribution section

6: Gas distribution wall

7: Exhaust port

8': (gas distribution chamber) (downstream) section; middle cavity

8": (gas distribution chamber) (up/downstream) section; middle cavity

8''': (gas distribution chamber) (upstream) section; middle cavity

11: Separate the bottom

12: Flow barrier

12': Flow barrier

13: Vent hole/mouth

14: Ventilation channel; ventilation hole

14': ventilation channel; ventilation hole

30: fixing screw

31: bottom plate

Claims (15)

A gas inlet device for a CVD reactor, comprising a gas inlet member (2) that can be fixed on a fixed section (3) with a plurality of gas delivery lines (5), the gas inlet member containing a plurality of stacked gases Distribution level, each of the gas distribution levels has a gas distribution wall (6) including a plurality of exhaust ports (7), and the exhaust ports are connected to a gas distribution chamber (6) surrounded by the gas distribution wall (6). 8) Fluid connection, wherein there is an air inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) respectively connected with the gas distribution chamber (8) through an outlet (10), and the gas distribution chambers of different gas distribution levels (8) are separated by a separate bottom (11), wherein the air inlet passages (9.1, 9.2, 9.3, 9.4, 9.5) are arranged in a cylindrical central section of the gas inlet member (2) ( In 15), it is characterized by: The air intake passages (9.1, 9.2, 9.3, 9.4, 9.5) are arranged side by side in the cross-sectional plane passing through the central section (15), and the air intake passages (9.1, 9.2, 9.3, 9.4) are different from each other. 9.5) The outlets (10) of 9.5) are staggered to each other around the central section (15) in the circumferential direction. Such as the air intake device of claim 1, wherein the air intake passages (9.1, 9.2, 9.3, 9.4, 9.5) are arranged around a central opening (17, 17') or a central axis. Such as the air intake device of claim 1, wherein the gas inlet member (2) is composed of quartz, and a plurality of gas distribution bodies/gas distribution sections (4.1, 4.2, 4.3, 4.4, 4.5) or materials integrated with materials The integrated gas inlet member (2) is made by a selective laser etching method, wherein the material conversion is performed in the focus of the focused laser beam, and the converted material is removed by the etching fluid. A gas inlet device for a CVD reactor, comprising a gas inlet member (2) that can be fixed on a fixed section (3) with a plurality of gas delivery lines (5), the The gas inlet member includes a plurality of superimposed gas distribution levels, and the gas distribution levels respectively have a gas distribution wall (6) including a plurality of exhaust ports (7), and the exhaust ports are connected to the gas distribution wall (6) An enclosed gas distribution chamber (8) is fluidly connected, wherein an air inlet passage (9.1, 9.2, 9.3, 9.4, 9.5) communicates with the gas distribution chamber (8) through an outlet (10), and, The gas distribution chambers (8) of different gas distribution levels are separated by a separation bottom (11), which are characterized by: Each gas distribution level is constructed as a disc-shaped gas distribution section (4.1, 4.2, 4.3, 4.4, 4.5), on the gas distribution section, the gas distribution wall (6) and the edge of the separation bottom (11) It is connected at least through a hermetic abutment, and a central section (1.5) extends from the separating bottom (11), and the central section has an outlet for the air inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) (10), wherein the upwardly directed wide side (15') of the central section (15) of the lower gas distribution section (4.2, 4.3, 4.4, 4.5) is flat against the upper gas distribution section (4.1 , 4.2, 4.3, 4.4) on or connected to the bottom side of the separation bottom (11), and one of the central sections (15) of the upper gas distribution section (4.1, 4.2, 4.3, 4.4) is allowed to pass The hole (16) is fluidly connected to the outlet (10) of the inlet passage (9.1, 9.2, 9.3, 9.4, 9.5) of the lower gas distribution section (4.2, 4.3, 4.4, 4.5), and faces the upper wide The side (15') is exposed. Such as the air intake device of claim 4, wherein the separating bottom (11) is connected with the central section (15) and/or the gas distribution wall (6) in a consistent material. Such as the air intake device of claim 1, wherein the central section (15) is composed of a seat. A gas inlet device for a CVD reactor, comprising a gas inlet member (2) that can be fixed on a fixed section (3) with a plurality of gas delivery lines (5), the gas inlet member containing a plurality of stacked gases Distribution level The surfaces respectively have a gas distribution wall (6) including a plurality of exhaust ports (7), and the exhaust ports are fluidly connected with a gas distribution chamber (8) surrounded by the gas distribution wall (6), wherein, An air inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) respectively communicates with the gas distribution chamber (8), and the gas distribution chambers (8) of different gas distribution levels are separated by a separation bottom (11) respectively , Which is characterized by: Each gas distribution level is composed of disc-shaped gas distribution sections (4.1, 4.2, 4.3, 4.4, 4.5), and is provided with an opening (17, 17') extending through the entire gas inlet member (2). Such as the air intake device of claim 7, wherein the opening (17) forms a fixed opening for fixing the gas inlet member (2) on the fixed section (3), or the opening (17) forms A flushing channel (17'). Such as the air intake device of claim 7, wherein the stacked disc-shaped gas distribution sections (4.1, 4.2, 4.3, 4.4, 4.5) are in particular gas distribution bodies that have the same material or are joined together. A gas inlet device for a CVD reactor, comprising a gas inlet member (2) that can be fixed on a fixed section (3) with a plurality of gas delivery lines (5), the gas inlet member containing a plurality of stacked gases Distribution level, each of the gas distribution levels has a gas distribution wall (6) including a plurality of exhaust ports (7), and the exhaust ports are connected to a gas distribution chamber (6) surrounded by the gas distribution wall (6). 8) Fluid connection, in which there is an air inlet channel (9.1, 9.2, 9.3, 9.4, 9.5) respectively connected with the gas distribution chamber (8) through an outlet (10), and the gas distribution of different gas distribution levels The chamber (8) is separated by a separating bottom (11), which is characterized by: In at least one gas distribution chamber (8), between the outlet (10) of the inlet passage (9.1, 9.2, 9.3, 9.4, 9.5) and the gas distribution wall (6), there are one or more Ventilation At least one first flow barrier (12, 12', 12") of the channel (14, 14', 14"). For example, the air intake device of claim 10, wherein the flow barrier (12, 12') surrounds a central section (15), and the central section has air intake channels (9.1, 9.2, 9.3, 9.4, 9.5) Exit (10). Such as the air intake device of claim 10, wherein at least two flow barriers (12, 12') are arranged in sequence along the flow direction, and wherein the at least two flow barriers (12, 12') and especially the gas The distribution wall (6) is arranged concentrically around the central section (15). Such as the air intake device of claim 10, wherein the at least one flow barrier (12, 12') divides the gas distribution chamber (8) into an upstream section (8", 8"') and a downstream section (8') , 8"), or, the flow barrier (12") has a number of ventilation channels (14), which are adjacent to the gas distribution wall (6) and communicate with the exhaust ports (7) and have a larger cross section Many vent holes (13). A method of manufacturing the gas inlet member of the gas inlet device of any one of claims 1 to 13, characterized in that: Integrally use selective laser etching to manufacture many gas distribution bodies (4.1, 4.2, 4.3, 4.4, 4.5) or a gas inlet member (4.1, 4.2, 4.3, 4.4, 4.5) with multiple gas distribution sections (4.1, 4.2, 4.3, 4.4, 4.5) 2). A method for feeding process gas into the process chamber of a CVD reactor, the process gas systems via a gas delivery pipeline (5) or separate from each other via a plurality of gas delivery pipelines (5), respectively connected to the gas inlet channel (9.1 to 9.5) and their respective outlets (10), which are respectively fed into a gas distribution chamber (8) of a gas inlet member (2), and from the gas distribution chamber (8), the process gas systems Pass through a plurality of vents (13) of a gas distribution wall (6) communicating with a plurality of exhaust ports (7) to enter the process chamber (20), which Features are: The outlet (10) is arranged inside the gas distribution chamber (8), so that the process gas flow discharged from it can pass through different lengths and flow to the flow distances of the vent holes (13), and the gas distribution chamber (8) At least one of the flow barriers (12, 12', 12") causes the homogenization of the process gas discharged from the exhaust ports (7).

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