CN117512565B - Film deposition cavity and air inlet mechanism thereof - Google Patents
Film deposition cavity and air inlet mechanism thereof Download PDFInfo
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- CN117512565B CN117512565B CN202311414014.3A CN202311414014A CN117512565B CN 117512565 B CN117512565 B CN 117512565B CN 202311414014 A CN202311414014 A CN 202311414014A CN 117512565 B CN117512565 B CN 117512565B
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- 230000007246 mechanism Effects 0.000 title claims abstract description 73
- 230000008021 deposition Effects 0.000 title abstract description 31
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 29
- 238000004891 communication Methods 0.000 claims description 13
- 230000007423 decrease Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 8
- 235000007164 Oryza sativa Nutrition 0.000 claims description 3
- 235000009566 rice Nutrition 0.000 claims description 3
- 238000000605 extraction Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 56
- 238000000151 deposition Methods 0.000 abstract description 39
- 238000005086 pumping Methods 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 300
- 239000010409 thin film Substances 0.000 description 18
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 239000006227 byproduct Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 3
- 241000209094 Oryza Species 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The embodiment of the disclosure relates to the field of semiconductor manufacturing, and provides a thin film deposition cavity and an air inlet mechanism thereof. The air intake mechanism includes: the air inlet assembly is arranged at the top of the cavity of the film deposition cavity, and an air inlet channel is arranged in the air inlet assembly and is used for communicating an air inlet pipe for providing air; the air knife air outlet assembly is fixed with the air inlet assembly through the fixing mechanism; the air knife air outlet assembly comprises at least two air knives which are arranged at intervals around the circumferential direction of the air inlet channel, an air passage is formed in the air knives, the air inlet end of the air passage is communicated with the air inlet channel, the air outlet surface of the air knives is provided with a plurality of air outlets which are arranged at intervals, and the air outlets are communicated with the air outlet end of the air passage; the driving motor is used for driving the air knife air outlet assembly to rotate. The embodiment of the disclosure can at least improve the efficiency of film deposition, the uniformity of the film and the gas pumping speed in the film deposition cavity.
Description
Technical Field
The embodiment of the disclosure relates to the field of semiconductor manufacturing, in particular to a film deposition cavity and an air inlet mechanism thereof.
Background
The deposition process is a film forming process common in semiconductor manufacturing processes. The deposition processes mainly include chemical vapor deposition (CVD, chemical vapor deposition), physical vapor deposition (PVD, physical vapor deposition), and atomic layer deposition (ALD, atomic layer deposition).
Taking chemical vapor deposition as an example, chemical vapor deposition is a process technology in which reactant substances react chemically under gaseous conditions to generate solid substances which are deposited on the surface of a wafer to prepare a target film. The process technology is realized through a thin film deposition cavity.
However, the efficiency of film deposition, uniformity of film, and gas pumping rate in the film deposition chamber are all currently being improved.
Disclosure of Invention
The embodiment of the disclosure provides an air inlet mechanism and a thin film deposition cavity, which can at least improve the efficiency of depositing a thin film and the uniformity of the thin film.
According to some embodiments of the present disclosure, an aspect of the embodiments of the present disclosure provides a gas inlet mechanism for supplying a gas into a chamber of a thin film deposition chamber, the gas inlet mechanism comprising: the air inlet assembly is arranged at the top of the cavity, and is internally provided with an air inlet channel which is used for communicating an air inlet pipe for providing air; the air knife air outlet assembly is fixed with the air inlet assembly through the fixing mechanism; the air knife air outlet assembly comprises at least two air knives which are arranged around the circumferential direction of the air inlet channel at intervals, an air passage is formed in the air knives, the air inlet end of the air passage is communicated with the air inlet channel, the air outlet surface of the air knives is provided with a plurality of air outlets which are arranged at intervals, and the air outlets are communicated with the air outlet end of the air passage; the driving motor is used for driving the air knife air outlet assembly to rotate.
In some embodiments, the air knife is provided with a plurality of mutually independent air passages, and the air passages are in one-to-one correspondence with the air outlets.
In some embodiments, the gas passages are cavities located within the air knives, and the gas passages within different air knives are in communication; and a plurality of air outlets are communicated with the cavity.
In some embodiments, a plurality of said air knives form a straight, cross or rice shape.
In some embodiments, the air knife comprises: the first air outlet assembly is internally provided with the air passage, and the air flowing direction of the air passage is inclined relative to the air flowing direction of the air inlet channel; the second air outlet assembly is internally provided with a plurality of air outlets penetrating through the second air outlet assembly, and the air outlets are communicated with the air outlet end of the air passage; wherein, the direction of giving vent to anger of gas outlet is vertical direction.
In some embodiments, the air knife includes a central portion that is directly opposite the air intake assembly; the distribution density of the air outlets gradually decreases in a direction along the edge of the air knife toward the center portion.
In some embodiments, the air knife includes a central portion that is directly opposite the air intake assembly; the air outlet amounts of the different air outlets gradually decrease in a direction along the edge of the air knife toward the center portion.
In some embodiments, the intake passage includes: a first air intake passage and a second air intake passage which are independent of each other, the first air intake passage being for communication with a first air intake pipe that supplies a first gas, the second air intake passage being for communication with a second air intake pipe that supplies a second gas; the gas passage comprises a first gas passage and a second gas passage which are mutually independent, the gas inlet end of the first gas passage is communicated with the first gas inlet channel, and the gas inlet end of the second gas passage is communicated with the second gas inlet channel; the plurality of air outlets includes: the first type of air outlets are communicated with the air outlet end of the first air passage; the second-class air outlet is communicated with the air outlet end of the second air passage; wherein the first type air outlets and the second type air outlets are alternately arranged.
According to some embodiments of the present disclosure, there is also provided, in another aspect, a thin film deposition chamber including: a chamber; the base is arranged at the bottom of the cavity and used for bearing a wafer; the air extraction opening is arranged in a part of the bottom area of the cavity; the air inlet mechanism of any embodiment, wherein the air inlet assembly is arranged at the top of the cavity, and the fixing mechanism and the air knife outlet are arranged in the cavity.
In some embodiments, the location of the gas outlet is a plasma electrode plate.
The technical scheme provided by the embodiment of the disclosure has at least the following advantages:
In the technical scheme of the air inlet mechanism provided by the embodiment of the disclosure, the air inlet mechanism is used for providing air into the cavity of the film deposition cavity. The air intake mechanism includes: the air knife comprises an air inlet assembly, a fixing mechanism and an air knife air outlet assembly, wherein the air inlet assembly is arranged at the top of a cavity of the film deposition cavity, an air inlet channel is arranged in the air inlet assembly, and the air inlet channel is used for communicating an air inlet pipe for providing air. The air knife air outlet assembly is fixed with the air inlet assembly through a fixing mechanism. The air knife air outlet assembly comprises at least two air knives which are arranged around the air inlet channel at intervals in the circumferential direction, an air passage is arranged in the air knives, and the air inlet end of the air passage is communicated with the air inlet channel. The air outlet surface of the air knife is provided with a plurality of air outlets which are arranged at intervals. The air outlet is communicated with the air outlet end of the air passage. The air intake mechanism further includes a drive motor. The driving motor is used for driving the air knife air outlet assembly to rotate. Because the air inlet channel of the air inlet assembly is communicated with the air passage of the air knife air outlet assembly, the air outlet end of the air passage is communicated with the air outlet, so that air can enter from the air inlet channel, pass through the air passage of the air knife air outlet assembly and then enter the cavity of the film deposition cavity from the air outlet. In the embodiment of the disclosure, the driving motor can drive the air knife air outlet assembly to rotate, and can drive the air in the air passage in the air knife air outlet assembly to rotate by taking the air inlet passage as the center of circle, and the air rotation speed of the air passage far away from the air outlet of the air inlet passage is greater than that of the air passage near the air outlet of the air inlet passage due to the effect of centrifugal force, so that the flow rate of the air coming out of the air outlet far away from the air inlet passage in unit time is greater than that of the air coming out of the air outlet near the air inlet passage, the density of the air coming out of the air outlet near the air inlet passage in unit time is greater than that of the air coming out of the air outlet near the air inlet passage, and the density difference between the air coming out of the air outlet near the air inlet passage and the air outlet far away from the air inlet passage due to the difference of the path length of the air passage is reduced, and the density of the air on the wafer surface near the air inlet passage in unit time is close to the wafer surface near the air inlet passage and the wafer surface far away from the air inlet passage is close to the wafer surface in unit time, and the uniformity of the deposited film is improved.
In addition, the air knife air outlet assembly rotates to drive the gas in the gas passage in the air knife air outlet assembly to rotate, so that the flow speed of the gas is increased, the gas reaches the wafer more quickly, the gas density on the wafer in unit area can be improved, and the efficiency of depositing the film can be improved. In addition, the air knife air outlet assembly can rotate to drive the gas in the gas passage in the air knife air outlet assembly to rotate, so that the flowing speed of the gas is increased, and the pumping speed of the gas from the bottom of the cavity can be improved.
Drawings
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, which are not to be construed as limiting the embodiments unless specifically indicated otherwise; in order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the conventional technology, the drawings required for the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort to those of ordinary skill in the art.
FIGS. 1 to 3 are schematic structural views of several thin film deposition chambers according to the related art;
fig. 4 is a schematic structural view of an air intake mechanism according to an embodiment of the present disclosure;
FIGS. 5 and 6 are schematic views of two cross-sectional structures of FIG. 4 taken along the line A1-A2;
Fig. 7 to 12 are schematic bottom views of air knives according to embodiments of the present disclosure;
fig. 13 and 14 are two schematic structural views of an air intake mechanism according to an embodiment of the present disclosure;
FIGS. 15 to 17 are schematic bottom views of several air knives according to embodiments of the present disclosure;
FIG. 18 is a schematic view of an air intake mechanism according to an embodiment of the present disclosure;
Fig. 19 is a schematic structural view of a thin film deposition chamber according to an embodiment of the present disclosure.
Detailed Description
Fig. 1 to 3 are schematic structural views of several thin film deposition chambers in the related art.
Fig. 1 is a schematic structural diagram of a thin film deposition chamber, and fig. 2 is a plan view of an air outlet face 112 of the air inlet mechanism 102 in fig. 1. Referring to fig. 1 and 2, the thin film deposition chamber may be a CVD deposition chamber or an ALD deposition chamber, and the chamber of the thin film deposition chamber has an inlet 110 at the top and an exhaust port 120 at the bottom. The gas enters from the gas inlet 110 of the chamber 100, is discharged through the gas outlet 122 of the gas outlet face 112 of the gas inlet mechanism 102, contacts the wafer 11 placed on the bearing table 101, generates a target film product on the surface of the wafer 11, and the byproducts and the waste gas of the reaction are discharged from the gas exhaust port 120. The air inlet mechanism 102 is of a spray type design and comprises a porous spray head, and gas is conveyed to the surface of the wafer 11 through the porous spray head.
In the thin film deposition chamber, since the gas inlet 110 is disposed right above the relative center of the wafer 11, the uniformity of gas distribution on the surface of the wafer 11 is relatively high, so that the uniformity of the deposited thin film is high. However, the thin film deposition chamber described above has a problem in that the pumping speed of the gas pumped out through the pumping port 120 is low.
FIG. 3 is a schematic view of another thin film deposition chamber. Referring to fig. 3, the thin film deposition chamber may also be a CVD deposition chamber or an ALD deposition chamber using a gas cross-flow design, the chamber 200 having an inlet port 210 and an exhaust port 220 on opposite sides, respectively. The gas enters from the gas inlet 210 of the chamber 200, contacts the wafer 11 placed on the carrier 201, generates a target film product on the surface of the wafer 11, and the byproducts and the exhaust gas of the reaction are discharged from the exhaust port 220.
In the thin film deposition chamber, the gas pumping speed of pumping the gas through the pumping port 220 is high, but the uniformity of the deposited thin film is poor.
Therefore, it is one of the important points of the current researches to improve the gas inlet mechanism with the gas inlet at the top of the chamber and to increase the gas pumping speed while increasing the uniformity of the thickness of the deposited film. Analysis has found that there are two problems with the design of the air intake mechanism of fig. 1. One is: the gas inlet 110 region generally has a higher precursor concentration and a higher gas pressure, and the likelihood of reactant deposition in the central region of the wafer 11 is higher than the gas exhaust 120, resulting in a higher film thickness in the central region of the wafer 11. For an atomic layer thin film deposition cavity, although the precursor delivery time can be increased to compensate, the deposition rate is reduced and the precursor is wasted. And the second is: the gas inlet 110 is typically at a higher pressure, and generally, for a plasma enhanced vapor phase thin film deposition chamber, the quality (density, impurity content, crystallinity, etc.) of the thin film near the gas inlet 110 is better and the quality of the thin film is less good in the region far from the gas inlet 110 during the same plasma pulse time, so that the deposited thin film is not uniform.
In summary, the air flow rate of the air inlet mechanism of the existing porous spray type film deposition cavity is low, so that the film deposition rate is low, the air pressure of the air inlet opposite to the area is high, and the air flow difference between the central area and the edge area of the air flow is high, namely the air density of the air inlet opposite to the area is higher than that of the edge area, so that the deposited film is uneven. Therefore, the efficiency of depositing the thin film and the uniformity of the deposited thin film are improved. And because the gas flow rate is slow, the gas pumping rate is also relatively slow.
With further reference to fig. 1 and 2, the air intake mechanism 102 has an air passage (not shown) therein, one end of the air passage being in communication with the air inlet 110, and the other end of the air passage being in communication with the air outlet 122. Wherein the path length of the gas path near the gas outlet 122 of the gas inlet 110 is smaller than the path length of the gas path far from the gas outlet 122 of the gas inlet 110, so that the energy loss of the gas from the gas inlet 110 to the gas outlet 122 near the gas inlet 110 is smaller than the energy loss of the gas from the gas inlet 110 to the gas outlet 122 far from the gas inlet 110, the gas flow speed of the gas path connected near the gas outlet 122 of the gas inlet 110 is higher than the gas flow speed of the gas path connected far from the gas outlet 122 of the gas inlet 110, that is, the density of the gas coming out of the gas outlet 122 near the gas inlet 110 is higher than the density of the gas coming out of the gas outlet 122 far from the gas inlet 110 in unit time, and the film thickness near the gas inlet 110 on the wafer 11 is higher than the film thickness far from the gas inlet 110, so that the deposited film is uneven.
Therefore, the efficiency of depositing the thin film, the uniformity of the thin film, and the pumping speed of the gas in the thin film deposition chamber are all to be improved.
Embodiments of the present disclosure provide a gas inlet mechanism for providing a gas into a chamber of a thin film deposition chamber. The air intake mechanism includes: the air knife comprises an air inlet assembly, a fixing mechanism, an air knife air outlet assembly and a driving motor. The air inlet channel of the air inlet assembly is communicated with the air passage of the air knife air outlet assembly, and the air outlet end of the air passage is communicated with the air outlet, so that air can enter from the air inlet channel, pass through the air passage of the air knife air outlet assembly and then enter from the air outlet to the cavity of the film deposition cavity. The driving motor can drive the air knife to rotate, the air knife air outlet assembly can be driven to rotate by taking the air inlet channel as the center of a circle, the air rotation speed of the air channel far away from the air outlet of the air inlet channel is higher than that of the air channel near the air outlet of the air inlet channel due to the action of centrifugal force, the flow rate of the air coming out of the air outlet far away from the air inlet channel in unit time is higher than that of the air coming out of the air outlet near the air inlet channel, the density of the air coming out of the air outlet far away from the air inlet channel in unit time is higher than that of the air coming out of the air outlet near the air inlet channel, and the density difference between the air coming out of the air outlet near the air inlet channel and the air coming out of the air outlet far away from the air inlet channel due to the fact that the path length of the air channel is different can be reduced, so that the density of the air on the wafer surface near the air inlet channel in unit time is close to the density of the air on the wafer surface far away from the air inlet channel, and the uniformity of the deposited film can be improved. In addition, the air knife air outlet assembly rotates to drive the gas in the gas passage in the air knife air outlet assembly to rotate, so that the flow speed of the gas is increased, the gas reaches the wafer faster, the gas density on the wafer in unit area can be improved, the efficiency of depositing the film can be improved, the flow speed of the gas is increased, and the gas pumping speed in the film deposition cavity connected with the air inlet mechanism can be improved.
Embodiments of the present disclosure will be described in detail below with reference to the attached drawings. However, those of ordinary skill in the art will understand that in the various embodiments of the present disclosure, numerous technical details have been set forth in order to provide a better understanding of the present disclosure. The technical solutions claimed in the present disclosure can be implemented without these technical details and with various changes and modifications based on the following embodiments.
Fig. 4 is a schematic structural view of an air intake mechanism according to an embodiment of the present disclosure, and fig. 5 is a schematic structural view of a section of fig. 4 along A1-A2.
Referring to fig. 4 and 5 in combination, the intake mechanism includes: an air inlet assembly 300, a fixing mechanism 301 and an air knife air outlet assembly 302. The intake assembly 300 has an intake passage 310 therein, the intake passage 310 being for communicating with an intake pipe for supplying gas. The air knife air outlet assembly 302 is fixed with the air inlet assembly 300 through a fixing mechanism 301. The air knife air outlet assembly 302 comprises at least two air knives 312 which are circumferentially and alternately arranged around the air inlet channel 310, an air passage 313 is formed in the air knives 312, the air inlet end of the air passage 313 is communicated with the air inlet channel 310, an air outlet surface 314 of the air knives 312 is provided with a plurality of air outlets 315 which are alternately arranged, and the air outlets 315 are communicated with the air outlet end of the air passage 313. The air intake mechanism further includes: a drive motor (not shown). The driving motor is used for driving the air knife air outlet assembly 302 to rotate.
The gas inlet assembly 300 provides gas to the chamber of the film deposition chamber connected with the gas inlet mechanism, in particular, the gas inlet channel 310 in the gas inlet assembly 300 is connected with a gas inlet pipe for providing gas to the chamber of the film deposition chamber connected with the gas inlet mechanism.
In some embodiments, intake assembly 300 includes: mass flow controllers (MFCs, mass Flow Controller). The mass flow controller can control the intake air flow of the intake assembly 300 according to the flow value set by the user, and can improve the practicability of the intake mechanism.
The fixing mechanism 301 is used for connecting the air inlet assembly 300 and the air knife air outlet assembly 302, so that the air inlet assembly 300 is tightly connected with the air knife air outlet assembly 302, and air leakage between the air inlet assembly 300 and the air knife air outlet assembly 302 is avoided, and the reliability of the air inlet mechanism can be improved.
The air knife outlet assembly 302 is configured to deliver the gas entering from the air inlet assembly 300 to the wafer surface. The air knife air outlet assembly 302 is rotatable, and can drive the air in the air knife air outlet assembly 302 to rotate. The air knife air outlet assembly 302 rotates around the air inlet channel 310, the rotation speed of the gas in the gas channel 313 far away from the air outlet 315 of the air inlet channel 310 is greater than that of the gas in the gas channel 313 near to the air outlet 315 of the air inlet channel 310 due to the centrifugal force, so that the flow rate of the gas in the air outlet 315 far away from the air inlet channel 310 in unit time is greater than that of the gas in the air outlet 315 near to the air inlet channel 310, the density of the gas in the air outlet 315 far away from the air inlet channel 310 in unit time can be greater than that of the gas in the air outlet 315 near to the air inlet channel 310, and the density difference between the gas in the air outlet 315 near to the air inlet channel 310 and the gas in the air outlet 313 due to the different path lengths of the gas channel 313 can be reduced, so that the gas density on the wafer surface near to the air inlet channel 310 is close to the gas density on the wafer surface far away from the air inlet channel 310, and the uniformity of the deposited film can be improved. In addition, the air knife air outlet assembly 302 rotates to drive the air in the air knife air outlet assembly 302 to rotate, so that the flowing speed of the air is increased, the speed of the air reaching the wafer is increased, the density of the air on the wafer in unit area can be increased, the film deposition efficiency can be improved, and the air pumping speed in the film deposition cavity connected with the air inlet mechanism can be increased.
The air knife outlet assembly 302 includes at least two air knives 312 spaced circumferentially about the inlet channel 310. The air knife air outlet assembly 302 rotates, and in fact, each air knife 312 rotates to drive the air in the air passage 313 in the air knife 312 to rotate.
The air knife 312 is provided with an air passage 313, an air inlet end of the air passage 313 is connected with the air inlet channel 310, and the other end of the air passage 313 is connected with an air outlet 315 of the air outlet surface 314, so that air can enter through the air inlet channel 310, reach the chamber from the air outlet 315 to contact with the wafer, and a target film is generated on the surface of the wafer.
The surface of the air outlet face 314 of the air knife 312 facing the wafer in the chamber makes the air exhausted from the plurality of air outlets 315 provided on the air outlet face 314 contact with the wafer, and a target film is generated on the surface of the wafer.
It should be noted that, the drawings only illustrate the case where the air outlet 315 is rectangular, and in fact, the air outlet 315 may also be circular or other shapes.
In some embodiments, the air knife 312 has a plurality of independent air passages 313 therein, and the air passages 313 are in one-to-one correspondence with the air outlets 315.
In some embodiments, the plurality of air knives 312 form a straight, cross, or rice shape. That is, the number of air knives 312 may be 2, 4 or 8, and the included angle between any adjacent air knives 312 may be the same.
The same included angle between any adjacent air knives 312 can ensure that the number of air knives swept across each area of the wafer is the same, thereby ensuring that the contact area between the wafer and the gas in each area is the same, and being beneficial to improving the uniformity of the film.
In other examples, the number of air knives 312 may be an odd number, and the included angles between any adjacent air knives 312 may be the same.
It will be appreciated that when the size of the air knives 312 and the rotational speed of the air knives 312 are the same, the more the number of air knives 312, the more the air inlet channels 310, the more the air reaches the wafer surface from the air inlet channels 310 per unit time, i.e. the more the number of air knives 312 can increase the air flow rate on the wafer surface, thereby improving the efficiency of depositing the thin film.
FIG. 6 is a schematic cross-sectional view of the structure of FIG. 4 along the line A1-A2.
Referring to fig. 6, in some embodiments, the air knife 312 includes: the first gas outlet module 3121 and the second gas outlet module 3122, the first gas outlet module 3121 having a gas passage 313 therein, a gas flowing direction of the gas passage 313 being inclined with respect to a gas flowing direction of the gas inlet channel 310. The second gas outlet assembly 3122 has a plurality of gas outlets 315 therein extending through the second gas outlet assembly 3122, and the gas outlets 315 are in communication with the gas outlet ends of the gas channels 313. Wherein, the air outlet direction of the air outlet 315 is the vertical direction.
The first gas outlet assembly 3121 is connected to the gas inlet assembly 300, so that the gas in the gas inlet assembly 300 can enter the first gas outlet assembly 3121, and then flow through the second gas outlet assembly 3122 connected to the first gas outlet assembly 3121 to reach the chamber, so that the gas can contact with the wafer, and a target film is generated on the surface of the wafer.
The gas flowing direction of the gas passage 313 is inclined with respect to the gas flowing direction of the gas inlet passage 310, so that the gas entering the gas inlet passage 310 can be dispersed in various directions, not just in the opposite direction of the gas inlet passage 310, and the contact area of the gas and the wafer can be made larger.
The gas outlet 315 is in communication with the gas passage 313, so that the gas can pass through the gas passage 313 from the gas inlet channel 310, then reach the chamber from the gas outlet 315 to contact the wafer, and a target film is generated on the surface of the wafer.
It should be noted that, the air outlet direction of the air outlet 315 is a vertical direction, and the vertical direction is a direction perpendicular to the carrying surface of the base on which the wafer is placed. Thus, the gas outlet 315 for vertically exhausting gas can make the gas reaching the surface of the wafer contact with the wafer more uniformly, so that the uniformity of the deposited film can be improved.
Fig. 7 is a schematic bottom view of an air knife according to an embodiment of the disclosure.
Referring to fig. 7, in some embodiments, the air knife 312 includes a central portion 316 that faces the air intake assembly 300. The distribution density of the air outlets 315 decreases gradually in a direction along the edge of the air knife 312 toward the center portion 316.
Center portion 316 is the portion facing air intake assembly 300.
The distribution density of the air outlets 315 is gradually decreased in the direction along the edge of the air knife 312 toward the center portion 316, and the number of the air outlets 315 of the center portion 316 is decreased, so that the gas density on the surface of the wafer near the edge of the air knife 312 is smaller than that on the surface of the wafer near the edge of the air knife 312, and the difference between the gas density on the surface of the wafer near the center portion 316 and that near the edge of the air knife 312 due to the different path lengths of the gas passages 313 in the related art can be reduced, thereby improving the uniformity of the thin film.
Fig. 8 and 9 are schematic bottom views of two types of air knives according to an embodiment of the present disclosure.
Referring to both fig. 8 and 9, in some embodiments, the air knife 312 includes a central portion 316 that faces the air intake assembly 300. The different air outlets 315 gradually decrease in air output in a direction along the edge of the air knife 312 toward the center portion 316.
The different air outlets 315 gradually decrease in air output in a direction along the edge of the air knife 312 toward the center portion 316. The density of the gas exiting from the gas outlet 315 near the center portion 316 is made smaller than the density of the gas exiting from the gas outlet 315 near the edge of the air knife 312, so that the density of the gas on the surface of the wafer near the center portion 316 is smaller than the density of the gas on the surface of the wafer near the edge of the air knife 312, the difference between the density of the gas on the surface of the wafer near the center portion 316 and the density of the gas on the surface of the wafer near the edge of the air knife 312 due to the different path lengths of the gas passages 313 can be reduced, and the uniformity of the thin film can be improved.
It will be appreciated that, when the gas output of the gas outlets 315 and the distribution density of the gas outlets 315 gradually decrease in the direction along the edge of the air knife 312 toward the center portion 316, the density of the gas exiting the gas outlets 315 near the center portion 316 may be smaller than the density of the gas exiting the gas outlets 315 near the edge of the air knife 312, and the difference between the density of the gas on the surface of the wafer near the center portion 316 and the density of the gas on the surface of the wafer near the edge of the air knife 312 due to the different path lengths of the gas passages 313 may be reduced, and the effect of reducing the difference in the gas density existing in the related art may be better than the effect of reducing the gas output of the gas outlets 315 or the distribution density of the gas outlets 315 alone in the above embodiment, so that the uniformity of the film may be further improved.
Fig. 10 to 12 are schematic bottom views of air knives according to embodiments of the present disclosure.
Referring also to fig. 10-12, in other examples, the air knife 312 includes a central portion 316 that faces the air intake assembly 300. The distribution density of the air outlets 315 is the same in a direction along the edge of the air knife 312 toward the center portion 316, and the air outlet amounts of the different air outlets 315 are the same.
It will be appreciated that when the total amount of the air output from the air outlets 315 of the air knife 312 is the same, the air inlet mechanism (refer to fig. 12) of the air knife with a larger number of air output from the air outlets 315 is used, so that the air enters the chamber to reach the wafer, and the contact area with the wafer can be more uniform, which is more beneficial to producing the target film with higher uniformity.
Fig. 13 is a schematic structural view of an air intake mechanism according to an embodiment of the present disclosure.
Referring to both fig. 8 and 13, in some embodiments, the air knife 312 includes a central portion 316 that faces the air intake assembly 300. The distance from the air outlet face 314 to the air inlet assembly 300 gradually decreases in a direction along the edge of the air knife 312 toward the center portion 316, and the amount of air output from the various air outlets 315 gradually decreases.
The gas output of the gas outlet 315 gradually decreases in the direction along the edge of the air knife 312 toward the center 316, so that the gas output of the gas outlet 315 at the edge of the air knife 312 is maximized, the density of the gas exiting from the gas outlet 315 at the edge of the air knife 312 can be increased, the difference between the density of the gas exiting from the gas outlet 315 near the center 316 and the density of the gas exiting from the gas outlet 315 near the edge of the air knife 312 due to the different path lengths of the gas passages 313 can be reduced, the density of the gas on the surface of the wafer near the gas inlet channel 310 is close to the density of the gas on the surface of the wafer far from the gas inlet channel 310, and the uniformity of the thin film can be improved.
The driving motor is used for driving the air knife air outlet assembly 302 to rotate. The rotational rate at which the drive motor drives the air knife outlet assembly 302 may be adjusted according to user requirements. The rotational rate of the air knife outlet assembly 302 affects the amount of centrifugal force generated by the air knife outlet assembly 302. Under the action of centrifugal force, the gas rotation speed of the gas passage 313 far away from the gas outlet 315 of the gas inlet channel 310 is greater than that of the gas passage 313 near the gas outlet 315 of the gas inlet channel 310, so that the flow rate of the gas coming out of the gas outlet 315 far away from the gas inlet channel 310 in unit time is greater than that of the gas coming out of the gas outlet 315 near the gas inlet channel 310, the density of the gas coming out of the gas outlet 315 near the gas inlet channel 310 in unit time is greater than that of the gas coming out of the gas outlet 315 near the gas inlet channel 310, and the difference between the density of the gas coming out of the gas outlet 315 near the gas inlet channel 310 and the density of the gas coming out of the gas outlet 315 far away from the gas inlet channel 310 caused by the different path lengths of the gas passage can be reduced, the density of the gas on the surface of the wafer near the gas inlet channel 310 in unit time is close to the density of the gas on the surface of the wafer far away from the gas inlet channel 310, and the uniformity of the deposited film can be improved. And under the action of centrifugal force, the gas in the air knife air outlet assembly 302 can rotate, so that the flow speed of the gas can be increased, the gas speed from the air outlet 315 of the air knife air outlet assembly 302 is increased, the gas density on a wafer in unit area can be provided, and the efficiency of depositing the film can be improved. And the flow speed of the gas becomes fast, so that the gas pumping speed in the film deposition cavity connected with the gas inlet mechanism can be improved.
It will be appreciated that, when the rotational speed of the air knife air outlet assembly 302 is faster, the centrifugal force generated by the air knife air outlet assembly 302 is greater, and the flow speed of the air in the air knife air outlet assembly 302 is also faster, so that the air speed from the air outlet 315 of the air knife air outlet assembly 302 is faster, the density of the air on the wafer per unit area can be improved, and the efficiency of depositing the thin film can be improved. And the flow speed of the gas becomes fast, so that the gas pumping speed in the film deposition cavity connected with the gas inlet mechanism can be improved.
In some examples, the power of the drive motor is positively correlated to the rotational speed of the drive air knife outlet assembly 302, such that the rotational speed of the air knife outlet assembly 302, and thus the efficiency and gas pumping rate of the deposited film, can be adjusted by adjusting the power of the drive motor.
Fig. 14 is a schematic structural view of an air intake mechanism according to an embodiment of the present disclosure, and fig. 15 to 17 are schematic bottom structural views of an air knife according to an embodiment of the present disclosure. Fig. 15 to 17 are schematic bottom views of several bottom views of the air knife in the air intake mechanism of fig. 14, and the air knife in fig. 14 has a first air intake passage, not shown, and a second air intake passage, not shown.
Referring to fig. 14 to 17, in some embodiments, the intake passage 310 includes: the first intake passage 3101 and the second intake passage 3102 are independent of each other. The first intake passage 3101 is for communication with a first intake pipe that supplies a first gas, and the second intake passage 3102 is for communication with a second intake pipe that supplies a second gas. The gas passage 313 includes a first gas passage (not shown) and a second gas passage (not shown) that are independent of each other, an intake end of the first gas passage communicating with the first intake passage, and an intake end of the second gas passage communicating with the second intake passage. The plurality of air outlets 315 include: a first type of air outlet 3151 and a second type of air outlet 3152. The first type outlet 3151 communicates with the outlet end of the first gas passageway. The second type outlet 3152 communicates with the outlet end of the second gas passageway. Wherein the first type air outlets 3151 alternate with the second type air outlets 3152.
The first air inlet channel 3101 is used for being communicated with a first air inlet pipe for providing first air, the second air inlet channel 3102 is used for being communicated with a second air inlet pipe for providing second air, so that different two kinds of air can be simultaneously or sequentially introduced into a film deposition cavity connected with the air inlet mechanism, the requirements of different scenes of scientific researchers are met, and the practicability of the air inlet mechanism is improved.
The first gas passes through the first gas inlet conduit 3101, through the first gas passageway and out the first type gas outlet 3151 into the chamber to contact the wafer. The second gas flows through the second gas inlet conduit 3102, through the second gas passageway, and out the second gas outlet 3152 into the chamber to contact the wafer.
The first gas may be one or more of a reactive gas, a carrier gas, or a purge gas. The second gas may be one or more of a reactive gas, a carrier gas, or a purge gas.
The first type gas outlets 3151 and the second type gas outlets 3152 are alternately arranged, so that the first gas from the first type gas outlets 3151 and the second gas from the second type gas outlets 3152 can contact the surface of the wafer, and can react with another gas or purge the other gas on the surface of the wafer.
Fig. 18 is a schematic structural view of an air intake mechanism according to an embodiment of the present disclosure.
Referring to fig. 18, the gas passages 413 are cavities located in the air knives 412, and the gas passages 413 in different air knives 412 communicate. A plurality of air outlets 415 are in communication with the cavity.
It should be noted that, the air inlet assembly 400, the air inlet channel 410, the fixing mechanism 401, the air knife air outlet assembly 402, the air knife 412, the air passage 413, the air outlet face 414, and the air outlet 415 in the embodiment of the disclosure may refer to the air inlet assembly 300, the air inlet channel 310, the fixing mechanism 301, the air knife air outlet assembly 302, the air knife 312, the air passage 313, the air outlet face 314, and the air outlet 315 in the previous embodiment, which are not described herein.
In the embodiment of the air inlet mechanism, the air knife air outlet assembly rotates by taking the air inlet channel as the center of a circle, and the gas rotation speed of the gas passage far away from the air outlet of the air inlet channel is greater than that of the gas passage near the air outlet of the air inlet channel due to the effect of centrifugal force, so that the flow rate of the gas coming out of the air outlet far away from the air inlet channel in unit time is greater than that of the gas coming out of the air outlet near the air inlet channel, the density of the gas coming out of the air outlet near the air inlet channel in unit time is greater than that of the gas coming out of the air outlet near the air inlet channel, and the density difference between the gas coming out of the air outlet near the air inlet channel and the gas coming out of the air outlet far away from the air inlet channel due to the fact that the path length of the gas passage is different can be reduced, the gas density on the surface of the wafer near the air inlet channel is close to the gas density on the surface of the wafer far away from the air inlet channel, and the uniformity of the film can be improved. In addition, the air knife air outlet assembly rotates to drive the gas in the gas passage in the air knife air outlet assembly to rotate, so that the flow speed of the gas is increased, the gas reaches the wafer faster, the gas density on the wafer in unit area can be improved, the efficiency of depositing the film can be improved, the flow speed of the gas is increased, and the gas pumping speed in the film deposition cavity connected with the air inlet mechanism can be improved.
Accordingly, another embodiment of the present disclosure also provides a thin film deposition chamber having the air intake mechanism of any one of the embodiments described above. The thin film deposition chamber according to another embodiment of the present disclosure will be described in detail with reference to the accompanying drawings, and the same or corresponding parts as those of the previous embodiment may be referred to for the corresponding description of the previous embodiment, which will not be described in detail.
Fig. 19 is a schematic structural view of a thin film deposition chamber according to an embodiment of the present disclosure.
Referring to fig. 19, the thin film deposition chamber includes: chamber 500, base 501, pumping port 502. The susceptor 501 is disposed at the bottom of the chamber 500 for carrying the wafer 11. An exhaust port 502 is provided in a portion of the bottom region of the chamber 500. The thin film deposition chamber further comprises an air intake mechanism of any of the embodiments described above. Wherein, the air inlet assembly 300 of the air inlet mechanism is arranged at the top of the chamber 500, and the fixing mechanism 301 and the air knife 312 are arranged in the chamber.
The thin film deposition chamber is used for realizing a CVD reaction or an ALD reaction to prepare the target thin film. Among them, CVD includes atmospheric pressure chemical vapor deposition (APCVD, atmospheric pressure chemical vapor deposition), low pressure chemical vapor deposition (LPCVD, low pressure chemical vapor deposition), ultra-high vacuum chemical vapor deposition (UHVCVD, ultrahigh vacuum chemical vapor deposition), metal-organic chemical vapor deposition (MOCVD, metal-organic chemical vapor deposition), plasma chemical vapor deposition (PECVD), etc.
The chamber 500 provides a reaction environment for a CVD reaction or an ALD reaction.
The susceptor 501 is used to support the wafer 11, and in some cases, the susceptor 510 may be moved up and down relative to the bottom of the chamber 500, so that the distance between the surface of the wafer 11 and the gas outlet surface 314 of the gas inlet mechanism may be adjusted, and thus the thickness of the thin film deposited on the wafer 11 may be adjusted.
The wafer 11 may be a silicon wafer, a germanium wafer, a silicon germanium wafer, or the like.
The pumping port 502 is used to exhaust byproducts and exhaust gases of the reaction within the chamber 500.
In some embodiments, the gas inlet mechanism may be movable up and down relative to the top of the chamber 500, so that the distance of the gas outlet face 314 from the surface of the wafer 11 may be adjusted, and thus the thickness of the film deposited on the wafer 11 may be adjusted.
In some embodiments, the location of the gas outlet 315 is a plasma electrode plate. For PECVD, the position of the gas outlet 315 is a plasma electrode plate, and the pedestal 501 can also be a plasma electrode plate, so that the gas can be changed into plasma, and a target film is generated on the wafer 11, so that the film deposition cavity can meet the requirements of different CVD production, and the practicability of the film deposition cavity is improved.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of implementing the disclosure, and that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the disclosure, and the scope of the disclosure should be assessed accordingly to that of the appended claims.
Claims (9)
1. A gas inlet mechanism for supplying gas into a chamber of a thin film deposition chamber, the gas inlet mechanism comprising:
The air inlet assembly is arranged at the top of the cavity, and is internally provided with an air inlet channel which is used for communicating an air inlet pipe for providing air;
The air knife air outlet assembly is fixed with the air inlet assembly through the fixing mechanism;
The air knife air outlet assembly comprises at least two air knives which are arranged around the circumferential direction of the air inlet channel at intervals, an air passage is formed in the air knives, the air inlet end of the air passage is communicated with the air inlet channel, the air outlet surface of the air knives is provided with a plurality of air outlets which are arranged at intervals, and the air outlets are communicated with the air outlet end of the air passage; the air knife comprises a center part opposite to the air inlet component; the distribution density of the air outlets gradually decreases in the direction along the edge of the air knife pointing to the central part;
The driving motor is used for driving the air knife air outlet assembly to rotate.
2. The air inlet mechanism according to claim 1, wherein a plurality of mutually independent air passages are arranged in the air knife, and the air passages are in one-to-one correspondence with the air outlets.
3. The air intake mechanism of claim 1, wherein the air passage is a cavity within the air knife and the air passages within different air knives are in communication; and a plurality of air outlets are communicated with the cavity.
4. A gas inlet mechanism according to any one of claims 1 to 3, wherein a plurality of said air knives form a straight, cross or rice shape.
5. An air intake mechanism according to any one of claims 1 to 3, wherein the air knife comprises:
The first air outlet assembly is internally provided with the air passage, and the air flowing direction of the air passage is inclined relative to the air flowing direction of the air inlet channel;
the second air outlet assembly is internally provided with a plurality of air outlets penetrating through the second air outlet assembly, and the air outlets are communicated with the air outlet end of the air passage;
Wherein, the direction of giving vent to anger of gas outlet is vertical direction.
6. The air intake mechanism of claim 1, wherein the air knife comprises a central portion that is directly opposite the air intake assembly; the air outlet amounts of the different air outlets gradually decrease in a direction along the edge of the air knife toward the center portion.
7. The air intake mechanism of claim 1, wherein the air intake passage comprises:
A first air intake passage and a second air intake passage which are independent of each other, the first air intake passage being for communication with a first air intake pipe that supplies a first gas, the second air intake passage being for communication with a second air intake pipe that supplies a second gas;
The gas passage comprises a first gas passage and a second gas passage which are mutually independent, the gas inlet end of the first gas passage is communicated with the first gas inlet channel, and the gas inlet end of the second gas passage is communicated with the second gas inlet channel;
The plurality of air outlets includes:
the first type of air outlets are communicated with the air outlet end of the first air passage;
The second-class air outlet is communicated with the air outlet end of the second air passage;
Wherein the first type air outlets and the second type air outlets are alternately arranged.
8. A thin film deposition chamber, comprising:
A chamber;
the base is arranged at the bottom of the cavity and used for bearing a wafer;
the air extraction opening is arranged in a part of the bottom area of the cavity;
The air intake mechanism of any of claims 1-7, the air intake assembly disposed at a top of the chamber, the securing mechanism and the air knife outlet disposed within the chamber.
9. The thin film deposition chamber of claim 8, wherein the gas outlet is located at a plasma electrode plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202311414014.3A CN117512565B (en) | 2023-10-27 | 2023-10-27 | Film deposition cavity and air inlet mechanism thereof |
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| CN202311414014.3A CN117512565B (en) | 2023-10-27 | 2023-10-27 | Film deposition cavity and air inlet mechanism thereof |
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| CN117512565B true CN117512565B (en) | 2024-06-07 |
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| JPH0443634A (en) * | 1990-06-11 | 1992-02-13 | Fujitsu Ltd | Semiconductor manufacturing equipment |
| JPH05217914A (en) * | 1992-01-30 | 1993-08-27 | Nec Corp | Manufacture of semiconductor |
| JPH08316153A (en) * | 1995-05-19 | 1996-11-29 | Nec Corp | Vapor growth apparatus |
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| KR20170093469A (en) * | 2016-02-05 | 2017-08-16 | (주)브이앤아이솔루션 | Thin film deposition apparatus |
| CN210001931U (en) * | 2019-05-28 | 2020-01-31 | 东泰高科装备科技有限公司 | Spray header device and MOCVD equipment |
| CN211921690U (en) * | 2020-03-27 | 2020-11-13 | 江苏集萃有机光电技术研究所有限公司 | Airflow distribution device and thin film deposition equipment |
| CN115679293A (en) * | 2022-09-30 | 2023-02-03 | 楚赟精工科技(上海)有限公司 | Gas injection mechanism and gas phase reaction device |
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2023
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Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443634A (en) * | 1990-06-11 | 1992-02-13 | Fujitsu Ltd | Semiconductor manufacturing equipment |
| JPH05217914A (en) * | 1992-01-30 | 1993-08-27 | Nec Corp | Manufacture of semiconductor |
| JPH08316153A (en) * | 1995-05-19 | 1996-11-29 | Nec Corp | Vapor growth apparatus |
| JP2002353151A (en) * | 2001-05-30 | 2002-12-06 | Sumitomo Chem Co Ltd | Semiconductor manufacturing apparatus |
| KR20170093469A (en) * | 2016-02-05 | 2017-08-16 | (주)브이앤아이솔루션 | Thin film deposition apparatus |
| CN210001931U (en) * | 2019-05-28 | 2020-01-31 | 东泰高科装备科技有限公司 | Spray header device and MOCVD equipment |
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| CN115679293A (en) * | 2022-09-30 | 2023-02-03 | 楚赟精工科技(上海)有限公司 | Gas injection mechanism and gas phase reaction device |
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| CN117512565A (en) | 2024-02-06 |
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