CN212335288U - Thin film material deposition reaction device and thin film material deposition reaction system - Google Patents
Thin film material deposition reaction device and thin film material deposition reaction system Download PDFInfo
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- CN212335288U CN212335288U CN202020672792.8U CN202020672792U CN212335288U CN 212335288 U CN212335288 U CN 212335288U CN 202020672792 U CN202020672792 U CN 202020672792U CN 212335288 U CN212335288 U CN 212335288U
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Abstract
The utility model discloses a thin film material deposition reaction unit and thin film material deposition reaction system, wherein, thin film material deposition reaction unit includes: the gas distribution table is provided with a diffusion groove, the bottom wall of the diffusion groove is provided with a gas supply hole, and the gas distribution table is used for performing atomic layer deposition on the surface of the membrane material; the diffusion plate is arranged in the diffusion groove and is encircled with the bottom wall of the diffusion groove to form a diffusion cavity, the diffusion plate is provided with a plurality of diffusion holes which are arranged at intervals, and the air supply hole and the plurality of diffusion holes are communicated with the diffusion cavity; the diffusion plate is provided with a concentrated air supply area corresponding to the air supply holes, and the distribution density of the diffusion holes is gradually increased from the concentrated air supply area to the edge of the diffusion plate. The utility model provides a thin film material deposition reaction unit can promote the homogeneity of the sedimentary atomic deposition membrane in membrane material surface.
Description
Technical Field
The utility model relates to an atomic layer deposition technical field, in particular to thin film material deposition reaction unit and thin film material deposition reaction system.
Background
Deposition reaction forms of thin film materials include atomic layer deposition reaction, chemical vapor deposition and the like, and taking the atomic layer deposition reaction of thin film materials as an example, the atomic layer deposition is a technology for forming a monoatomic deposition film by alternately introducing a precursor in a vapor phase into a reaction container to chemisorb and react on a substrate. In an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous atomic film in such a way that only one atomic layer is deposited per reaction.
The precursor enters the reaction container in a gaseous state, the existing precursor is mainly supplied into the reaction container through an air nozzle for centralized air supply, and the precursor entering the reaction container can be contacted with all parts of the surface of the substrate only through a long diffusion process. The concentration of the precursor near the air tap can be obviously higher than that of the precursor far away from the air tap, the surface of the base body closer to the air tap is contacted with the precursor earlier to generate atomic layer deposition reaction, the concentration of the precursor near the air tap is originally higher, the thickness of the atomic layer deposited on the surface of the base body close to the air tap is thicker, the thickness of the atomic layer deposited on the surface of the base body far away from the air tap is thinner, and the thickness of the atomic layer deposited on each part of the surface of the base body is not uniform enough.
The above is only for the purpose of assisting understanding of the technical solutions of the present application, and does not represent an admission that the above is prior art.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a thin film material deposition reaction unit aims at promoting the homogeneity of the sedimentary atomic deposition membrane in membrane material surface.
In order to achieve the above object, the present invention provides a thin film material deposition reaction apparatus, which comprises:
the gas distribution table is provided with a diffusion groove, the bottom wall of the diffusion groove is provided with a gas supply hole, and the gas distribution table is used for performing atomic layer deposition on the surface of the membrane material;
the diffusion plate is arranged in the diffusion groove and is encircled with the bottom wall of the diffusion groove to form a diffusion cavity, the diffusion plate is provided with a plurality of diffusion holes which are arranged at intervals, and the air supply hole and the plurality of diffusion holes are communicated with the diffusion cavity; the diffusion plate is provided with a concentrated air supply area corresponding to the air supply holes, and the distribution density of the diffusion holes is gradually increased from the concentrated air supply area to the edge of the diffusion plate.
In an embodiment of the present invention, the plurality of diffusion holes are radially distributed from the center of the concentrated gas supply region to the edge of the diffusion plate.
In an embodiment of the present invention, the centers of the plurality of diffusion holes may be sequentially connected to form a spiral ring.
In an embodiment of the present invention, the diffusion holes are circular holes, and the hole diameters of the diffusion holes are the same.
In an embodiment of the present invention, the diffusion hole is a circular hole, and the diameter of the diffusion hole is less than or equal to 10 mm.
In an embodiment of the present invention, a shape of any one of the diffusion holes is one of a circle, a square, a kidney, and a long strip.
In an embodiment of the present invention, the cross-sectional area of the diffusion hole gradually decreases from the end close to the bottom wall of the diffusion groove to the end away from the bottom wall of the diffusion groove.
In an embodiment of the present invention, the inner wall of the diffusion groove is tapered.
In an embodiment of the present invention, the thin film material deposition reaction apparatus includes a plurality of diffusion plates, and the plurality of diffusion plates are sequentially disposed at intervals from the bottom wall of the diffusion groove to the notch of the diffusion groove.
Furthermore, the utility model discloses still provide a thin film material deposition reaction system, thin film material deposition reaction system includes:
the thin film material deposition reaction device; and
and the air supply device is connected with the air supply hole and used for supplying air to the diffusion cavity.
The utility model discloses technical scheme sets up the diffusion tank through adopting at gaseous distribution bench, and the diapire of diffusion tank is provided with the air feed hole to set up the diffuser plate in the diffusion tank, set up a plurality of diffusion holes that the interval set up on the diffuser plate. Therefore, after the gaseous precursor is intensively supplied into the diffusion tank through the gas supply holes, the precursor is upwards diffused to the notch of the diffusion tank through the plurality of diffusion holes on the diffusion plate, so that when the film material is conveyed forwards on the gas distribution table, the film material passes through the notch of the diffusion tank and is contacted with the precursor diffused by the diffusion plate, and a more uniform atomic deposition film is formed on the surface of the film material. In addition, because the distribution density of the diffusion holes is gradually increased from the concentrated gas supply area to the edge of the diffusion plate, namely, the diffusion holes with loose distribution density are arranged at the position closer to the gas supply hole on the diffusion plate, and the diffusion holes with tight distribution density are arranged at the position farther away from the gas supply hole on the diffusion plate, the uniformity of the diffusion plate to the precursor is further promoted, and the uniformity of the atomic deposition film deposited on the surface of the film material is further improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural view of a thin film material deposition reaction apparatus of the detection apparatus of the present invention;
FIG. 2 is a schematic cross-sectional view of the diffusion cell of FIG. 1;
fig. 3 is a schematic structural view of the diffuser plate in fig. 1.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 1 | Gas distribution table | 21 | |
| 11 | |
22 | Centralized |
| 12 | |
3 | |
| 2 | Diffusion plate |
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the motion situation, etc. in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is changed accordingly.
In the present application, unless expressly stated or limited otherwise, the terms "connected" and "fixed" are to be construed broadly, e.g., "fixed" may be fixedly connected or detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In addition, descriptions in the present application as to "first", "second", and the like are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. Throughout this document, "and/or" is meant to include three juxtaposed aspects, exemplified by "A and/or B," including either the A aspect, or the B aspect, or both A and B. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
The utility model provides a thin film material deposition reaction unit.
The utility model provides a thin film material deposition reaction unit, refer to fig. 1 to combine fig. 2 to show, thin film material deposition reaction unit includes:
the gas distribution table 1 is provided with a diffusion groove 11, the bottom wall of the diffusion groove 11 is provided with a gas supply hole 12, and the gas distribution table 1 is used for supplying a gaseous precursor or a reactant to the surface of the membrane material so as to enable the surface of the membrane material to perform an atomic deposition reaction to form an atomic deposition layer;
the diffusion plate 2 is arranged in the diffusion groove 11 and is enclosed with the bottom wall of the diffusion groove 11 to form a diffusion cavity 3, the diffusion plate 2 is provided with a plurality of diffusion holes 21 which are arranged at intervals, and the air supply hole 12 and the plurality of diffusion holes 21 are communicated with the diffusion cavity 3; the diffusion plate 2 is formed with a concentrated gas supply area 22 corresponding to the gas supply holes 12, and the distribution density of the plurality of diffusion holes 21 is gradually increased from the concentrated gas supply area 22 toward the edge of the diffusion plate 2.
In this embodiment, the gas distribution table 1 may be provided with a plurality of roller structures for conveying, so as to carry and convey the film material, and the film material in this embodiment may be a soft or hard material that is arbitrarily processed into a film sheet, and is not limited herein.
The film passes through the notches of the diffusion tank 11 while being transported on the gas distribution table 1. The air supply hole 12 is used for introducing gaseous precursors or reactants, so that the precursors or the reactants enter the diffusion groove 11 to be primarily diffused, the diffused precursors or the reactants are naturally diffused to the notch of the diffusion groove 11, the precursors or the reactants have active chemical properties, can be adsorbed on the surface of the membrane material through the notch of the diffusion groove 11, and are deposited on the surface of the membrane material as an atomic deposition layer, so that the surface coating of the membrane material is realized.
The concentrated gas supply region 22 is a region of the diffusion plate 2 facing the gas supply holes 12, and when the gas-state precursor or reactant is supplied into the diffusion slot 11 through the gas supply holes 12, the concentrated gas supply region 22 on the diffusion plate will be exposed to the precursor or reactant with higher concentration and faster flow rate, and the diffusion plate 2 will be exposed to the precursor or reactant with lower concentration and slower flow rate due to the diffusion effect of the precursor or reactant at the edge of the concentrated gas supply region 22 or at a position far from the concentrated gas supply region 22.
By providing a plurality of diffusion holes 21 having a small distribution density in the concentrated gas supply region 22, the amount of the precursor or the reactant passing through the diffusion holes 21 in the concentrated gas supply region 22 can be reduced, and by providing a plurality of diffusion holes 21 having a large distribution density in the periphery of the concentrated gas supply region 22, the amount of the diffusion holes 21 passing through the periphery of the concentrated gas supply region 22 can be increased as appropriate, so that the precursor or the reactant is more uniformly dispersed to the notches of the diffusion grooves 11 after passing through the diffusion plate 2, the precursor or the reactant is more uniformly brought into contact with the surface of the film material, and an atomic deposition film having a uniform thickness is formed on the surface of the film material.
In the embodiment, a diffusion groove 11 is arranged on a gas distribution table 1, a gas supply hole 12 is arranged on the bottom wall of the diffusion groove 11, a diffusion plate 2 is arranged in the diffusion groove 11, and a plurality of diffusion holes 21 are arranged at intervals on the diffusion plate 2. Thus, after the gaseous precursor is supplied into the diffusion tank 11 through the gas supply holes 12, the precursor is diffused upward to the opening of the diffusion tank 11 through the plurality of diffusion holes 21 of the diffusion plate 2, so that when the film is conveyed forward on the gas distribution table 1, the film passes through the opening of the diffusion tank 11 and contacts the precursor diffused by the diffusion plate 2 to form a more uniform atomic deposition film on the surface of the film. In addition, since the distribution density of the plurality of diffusion holes 21 gradually increases from the concentrated gas supply region 22 to the edge of the diffusion plate 2, that is, the plurality of diffusion holes 21 with a loose distribution density are disposed at a position closer to the gas supply holes 12 on the diffusion plate 2, and the plurality of diffusion holes 21 with a tight distribution density are disposed at a position farther from the gas supply holes 12 on the diffusion plate 2, it is advantageous to further improve the uniformity of diffusion of the precursor by the diffusion plate 2, so as to further improve the uniformity of the atomic deposition film deposited on the surface of the film material.
Alternatively, the aperture diameter of the plurality of diffusion holes 21 gradually increases from the center of the concentrated air supply region 22 to the periphery of the concentrated air supply region 22. By providing a plurality of diffusion holes 21 having a small diameter in the concentrated gas supply region 22, the amount of the precursor or the reactant passing through the diffusion holes 21 in the concentrated gas supply region 22 can be reduced, and by providing the diffusion holes 21 having a large diameter in the periphery of the concentrated gas supply region 22, the amount of the diffusion holes 21 passing through the periphery of the concentrated gas supply region 22 can be increased as appropriate, so that the precursor or the reactant is more uniformly dispersed to the notches of the diffusion grooves 12 after passing through the diffusion plate 2, the precursor or the reactant is more uniformly brought into contact with the surface of the film material, and an atomic deposition film having a uniform thickness is formed on the surface of the film material.
In an embodiment of the present invention, the plurality of diffusion holes 21 are radially distributed from the center of the concentrated gas supply region 22 to the edge of the diffusion plate 2.
In the present embodiment, when the plurality of diffusion holes 21 are radially distributed from the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22, the diffusion holes 21 are gradually dispersed from the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22, the distribution density and the pore diameter of the plurality of diffusion holes 21 located in the concentrated gas supply region 22 are small, and the distribution density and the pore diameter of the plurality of diffusion holes 21 located in the periphery of the concentrated gas supply region 22 are large, so that the amount of the precursor or the reactant in the diffusion chamber 3 passing through the diffusion holes 21 in the concentrated gas supply region 22 is reduced, and the amount of the precursor or the reactant in the diffusion chamber 3 passing through the diffusion holes 21 in the periphery of the concentrated gas supply region 22 is increased. With this, the precursor or the reactant is more uniformly dispersed to the notch of the diffusion groove 11 after passing through the diffusion plate 2, and the precursor or the reactant can more uniformly contact the surface of the film material to form an atomic deposition film having a uniform thickness on the surface of the film material.
In an embodiment of the present invention, the centers of the plurality of diffusion holes 21 may be sequentially connected to form a spiral ring.
In the present embodiment, when the plurality of diffusion holes 21 are sequentially arranged from the center of the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22, and the centers of the plurality of diffusion holes 21 can be sequentially connected in a spiral ring shape, the diffusion holes 21 are gradually dispersed from the concentrated gas supply region 22 to the periphery of the concentrated gas supply region 22, the distribution density and the pore diameter of the plurality of diffusion holes 21 located in the concentrated gas supply region 22 are small, and the distribution density and the pore diameter of the plurality of diffusion holes 21 located in the periphery of the concentrated gas supply region 22 are large, so as to reduce the amount of the precursor or the reactant in the diffusion chamber 3 passing through the diffusion holes 21 in the concentrated gas supply region 22, and increase the amount of the precursor or the reactant in the diffusion chamber 3 passing through the diffusion holes 21 in the periphery of the concentrated gas supply region 22. With this, the precursor or the reactant is more uniformly dispersed to the notch of the diffusion groove 11 after passing through the diffusion plate 2, and the precursor or the reactant can more uniformly contact the surface of the film material to form an atomic deposition film having a uniform thickness on the surface of the film material.
In an embodiment of the present invention, referring to fig. 3 in combination with fig. 1, the diffusion holes 21 are circular holes, and the diameters of the plurality of diffusion holes 21 are the same.
In this embodiment, the circular hole is easy to be processed, and when the apertures of the circular diffusion holes 21 are consistent, the difficulty of processing the circular diffusion holes 21 on the diffusion plate 2 is further reduced, which is beneficial to saving the manufacturing cost of the diffusion plate 2. In addition, since the plurality of diffusion holes 21 have the same aperture, the amount of the gaseous precursor or reactant that can pass through each diffusion hole 21 per unit time is equivalent, which is favorable for improving the uniformity of the gaseous precursor or reactant that is diffused through each diffusion hole 21.
In an embodiment of the present invention, referring to fig. 3 in combination with fig. 1, the diffusion holes 21 are circular holes, and the diameter of the diffusion holes 21 is less than or equal to 10 mm.
In the present embodiment, since the precursor or reactant in the gaseous state passes through the diffusion holes 21, the flow rate and flow velocity of the precursor or reactant will be limited by the hole diameter of the diffusion holes 21. When the pore diameter of the diffusion pores 21 is too large, the unit flow rate of the precursor or the reactant through the diffusion pores 21 is too large, and the purpose of uniformly dispersing the precursor or the reactant is not achieved. When the diffusion opening 21 is a circular hole, the diameter of the diffusion hole 21 is 10 mm or less, so that the precursor or reactant can be split by a sufficient number of diffusion holes 21, a more desirable diffusion effect can be achieved, and the precursor or reactant can be uniformly diffused through the diffusion plate 2.
In an embodiment of the present invention, the shape of any diffusion hole 21 is one of a circle, a square, a kidney, and a long strip.
In the present embodiment, the shapes of the diffusion holes 21 may be the same or different, and when the shapes of the diffusion holes 21 are the same, each diffusion hole 21 may be one of a circular shape, a square shape, a kidney shape, and a long strip shape, and the diffusion holes 21 having these shapes are easy to process, have low difficulty in processing, and can reduce the manufacturing cost of the diffusion plate 2. Secondly, the same shape of each diffusion hole 21 is also more beneficial to ensure the uniformity of the gaseous precursor or reactant diffused through each diffusion hole 21. When the shape of some diffusion holes 21 in the plurality of diffusion holes 21 is different from the shape of the rest diffusion holes 21, for example, the shape of some diffusion holes 21 is a waist-shaped hole, and the shape of some diffusion holes 21 is a strip-shaped hole, because the amount of the precursor or reactant coming from the gas supply hole 12 can be received by the diffusion plate 2 at the edge portion far away from the gas supply hole 12, the waist-shaped diffusion holes 21 can be opened at the edge portion far away from the gas supply hole 12 of the diffusion plate 2, so as to increase the throughput of the precursor or reactant at the portion of the diffusion plate 2, and to uniformly diffuse the gaseous precursor or reactant through the diffusion plate 2 as much as possible.
In an embodiment of the present invention, the cross-sectional area of the diffusion holes 21 is gradually reduced from the end close to the bottom wall of the diffusion groove 11 to the end away from the bottom wall of the diffusion groove 11.
In the present embodiment, the diffusion holes 21 are formed in a reverse tapered shape to reduce the amount of the gaseous precursor or reactant rebounded due to being stopped by the diffusion plate 2 when the gaseous precursor or reactant is supplied into the diffusion chamber 3 through the gas supply hole 12, and increase the amount of the gaseous precursor or reactant entering each diffusion hole 21, thereby improving the diffusion rate of the gaseous precursor or reactant while ensuring the uniform diffusion effect of the gaseous precursor or reactant.
In an embodiment of the present invention, the diffusion groove 11 is tapered.
In this embodiment, when the diffusion tank 11 is set in a tapered shape, the width of the notch of the diffusion tank 11 is larger, and when the gaseous precursor or reactant is diffused to the notch of the diffusion tank 11 through the diffusion plate 2, the film material passes through the notch of the diffusion tank 11, the film material can be contacted with more gaseous precursors or reactants, and the surface area of the film material contacted with the gaseous precursors or reactants is larger, so that the efficiency of forming the atomic deposition film on the surface of the film material can be improved.
In an embodiment of the present invention, the thin film material deposition reaction apparatus includes a plurality of diffusion plates 2, and the plurality of diffusion plates 2 are sequentially disposed at intervals from the bottom wall of the diffusion groove 11 to the notch of the diffusion groove 11.
In the present embodiment, a plurality of diffusion plates 2 are disposed in the diffusion tank 11, the plurality of diffusion plates 2 are sequentially spaced from the bottom wall of the diffusion tank 11 to the notches of the diffusion tank 11, and the plurality of diffusion plates 2 are disposed such that the gaseous precursor or reactant introduced into the diffusion tank 11 from the gas supply hole 12 can be more uniformly flowed to the notches of the diffusion tank 11 by multiple diffusion through the plurality of diffusion plates 2, thereby forming a uniform atomic deposition film on the surface of the film material.
Optionally, the bottom wall of the diffusion groove 12 is convexly provided with a limit boss, the limit boss is spaced from the air supply hole 12, and the diffusion plate 2 is abutted and limited on the limit boss. It can be understood that the limiting boss may be a ring-shaped protruding structure disposed on the bottom wall of the diffusion groove 12, or may be a structure including multiple sections of protrusions protruding from the bottom wall of the diffusion groove 12. Diffuser plate 2 is spacing with one side butt of spacing boss 12 diapire dorsad, and the periphery wall of diffuser plate 2 and the lateral wall butt of diffusion groove 12 to support and spacing diffuser plate 2 through spacing protruding, so that diffuser plate 2 is fixed and fixed in diffusion groove 12, guarantee the diffusion effect of diffuser plate 2 to precursor or reactant. The diffusion plate 2 and the bottom wall of the diffusion groove 12 enclose to form a cavity, and the precursor or reactant in the cavity can only be diffused through the diffusion holes 21 on the diffusion plate 2, which is beneficial to improving the diffusion effect of the diffusion plate 2 on the precursor or reactant.
Alternatively, the thin film material deposition reaction apparatus includes a plurality of diffusion plates 2, and the plurality of diffusion plates 2 are sequentially arranged at intervals from the bottom wall of the diffusion tank 12 to the notch of the diffusion tank 12;
a plurality of steps are formed on one side of the limiting boss back to the side wall of the diffusion groove 12, and each diffusion plate 2 is abutted and limited on each step.
In the present embodiment, a plurality of diffusion plates 2 are disposed in the diffusion tank 12, the plurality of diffusion plates 2 are sequentially spaced from the bottom wall of the diffusion tank 12 to the notches of the diffusion tank 12, and the plurality of diffusion plates 2 are disposed such that the gaseous precursor or reactant entering the diffusion tank 12 from the gas supply hole 12 can be more uniformly flowed to the notches of the diffusion tank 12 by multiple diffusion through the plurality of diffusion plates 2, so as to form a uniform atomic deposition film on the surface of the film material.
Optionally, the thin film material deposition reaction apparatus further includes a partition plate covering the notch of the diffusion groove 12, and the partition plate is provided with an opening communicating with the diffusion groove 12.
In this embodiment, the partition covers the opening of the diffusion tank 12, two ends of the partition are respectively connected to two opposite sidewalls of the diffusion tank 12, the partition and the inner wall of the diffusion tank 12 enclose to form a cavity, the diffusion plate 2 is located in the cavity, the gaseous precursor or reactant enters the diffusion tank 12 through the plurality of air supply holes 12, and the precursor or reactant is diffused and distributed to various positions of the cavity by the diffusion plate 2. The partition plate is provided with an opening through which a precursor or a reactant can pass, and the precursor or the reactant can contact and react with the film material through the opening. The setting of baffle and the opening on the baffle makes the precursor or the reactant that diffuse to diffusion tank 12 notch department, can not follow the periphery of diffusion tank 12 notch and flow away outside diffusion tank 12, and precursor or reactant pass through the opening and contact with the membrane material, can increase the time of precursor or reactant and membrane material contact as far as possible, and make the reaction on precursor or reactant and membrane material surface more abundant, are favorable to promoting the utilization ratio of precursor or reactant, avoid the waste of precursor or reactant. Preferably, the opening is formed in the middle of the partition plate, so that the contact time of the precursor or the reactant and the film material is further prolonged, and the reaction of the precursor or the reactant and the surface of the film material is more sufficient.
Furthermore, the utility model discloses still provide a thin film material deposition reaction system, this thin film material deposition reaction system includes: the thin film material deposition reaction device; and
and the air supply device is connected with the air supply hole 12 and is used for supplying air into the diffusion cavity 3.
In this embodiment, the specific structure of the thin film material deposition reaction apparatus refers to the above embodiments, and since the thin film material deposition reaction system adopts all technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are achieved, and no further description is given here.
The gas supply device may be a reaction device for preparing a gaseous precursor or a reactant, the device has an interface for delivering the gaseous precursor or the reactant to the outside, and the interface is connected with the gas supply hole 12 through a pipeline, so that the gaseous precursor or the reactant can be continuously supplied into the gas supply chamber for performing an atomic deposition reaction with the film material to form an atomic deposition film on the surface of the film material.
The above only is the preferred embodiment of the present invention, not limiting the scope of the present invention, all the equivalent structure changes made by the contents of the specification and the drawings under the inventive concept of the present invention, or the direct/indirect application in other related technical fields are included in the patent protection scope of the present invention.
Claims (10)
1. A thin film material deposition reaction apparatus, comprising:
the gas distribution table is provided with a diffusion groove, the bottom wall of the diffusion groove is provided with a gas supply hole, and the gas distribution table is used for performing atomic layer deposition on the surface of the membrane material;
the diffusion plate is arranged in the diffusion groove and is encircled with the bottom wall of the diffusion groove to form a diffusion cavity, the diffusion plate is provided with a plurality of diffusion holes which are arranged at intervals, and the air supply hole and the plurality of diffusion holes are communicated with the diffusion cavity; the diffusion plate is provided with a concentrated air supply area corresponding to the air supply holes, and the distribution density of the diffusion holes is gradually increased from the concentrated air supply area to the edge of the diffusion plate.
2. The thin film material deposition reaction apparatus as claimed in claim 1, wherein the plurality of diffusion holes are radially distributed from a center of the concentrated gas supply region to an edge of the diffusion plate.
3. The thin film material deposition reaction apparatus as claimed in claim 1, wherein centers of the plurality of diffusion holes are sequentially connected in a spiral ring shape.
4. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 3, wherein the diffusion holes are circular holes, and a plurality of the diffusion holes have the same diameter.
5. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 3, wherein the diffusion holes are circular holes having a diameter of 10 mm or less.
6. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 3, wherein any one of the diffusion holes has a shape of one of a circle, a square, a kidney, and a long strip.
7. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 3, wherein a cross-sectional area of the diffusion hole is gradually reduced from an end close to the bottom wall of the diffusion groove to an end far from the bottom wall of the diffusion groove.
8. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 3, wherein the diffusion groove is provided in a tapered shape.
9. The thin film material deposition reaction apparatus as claimed in any one of claims 1 to 3, wherein the thin film material deposition reaction apparatus includes a plurality of the diffusion plates, which are disposed at intervals in order from a bottom wall of the diffusion tank to a notch of the diffusion tank.
10. A thin film material deposition reaction system, comprising:
the thin film material deposition reaction apparatus as claimed in any one of claims 1 to 9; and
and the air supply device is connected with the air supply hole and used for supplying air to the diffusion cavity.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113373430A (en) * | 2021-05-21 | 2021-09-10 | 江苏鹏举半导体设备技术有限公司 | Atomic layer deposition apparatus |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113373430A (en) * | 2021-05-21 | 2021-09-10 | 江苏鹏举半导体设备技术有限公司 | Atomic layer deposition apparatus |
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