JP2001284258A - Semiconductor production system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance the quality of product and the production yield by mixing a plurality of kinds of gas sufficiently so that a film having a uniform concentration composition can be formed with uniform processing gas concentration. SOLUTION: In a semiconductor production system comprising an airtight processing chamber 2, a substrate mounting member 36 provided in the processing chamber, means 38 for heating a substrate 42 mounted on the substrate mounting member, and a hole 34 for jetting processing gas toward the substrate mounting face of the substrate mounting member made oppositely thereto, a mixer plate 52 having first and second major surfaces is disposed upstream the gas jet hole. A plurality of independent grooves 62, 63 are made in the first major surface so that different kinds of gas are fed thereto and at least one recess 65 is made in the second major surface across at least two independent grooves. The recess and the plurality of grooves are interconnected through channels and the different kinds of gas flowing into the plurality of grooves are mixed in the recess before being jetted from the gas jet hole toward the substrate mounting face.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor manufacturing apparatus for manufacturing semiconductor elements from a substrate such as a silicon wafer, and more particularly to a semiconductor manufacturing apparatus for processing a substrate by mixing a plurality of types of gases.

[0002]

2. Description of the Related Art Semiconductor devices include wafers, glass substrates, and the like.
A predetermined thin film is formed on the surface of the substrate by a CVD method, and phosphorus,
The semiconductor manufacturing apparatus is manufactured by diffusing impurities such as boron or by performing etching or the like. The semiconductor manufacturing apparatus includes a reaction furnace for performing the above-described processing on the substrate.

When the surface of the wafer is treated with a treatment gas obtained by mixing a plurality of kinds of gases in the process of manufacturing the semiconductor device, the plurality of kinds of gases are separately supplied to a treatment chamber in a reaction furnace. And then used for processing the wafer.

A conventional semiconductor manufacturing apparatus for forming a film using two kinds of gases will be described with reference to FIGS. 10 and 11. FIG.

The semiconductor manufacturing apparatus shown in FIGS. 10 and 11 is a low-pressure thermal CVD apparatus for processing wafers one by one.
A cold wall reactor 1 is provided. The cold wall reactor 1 has a chamber 2 which is an airtight vacuum vessel, and a space formed in the chamber 2 constitutes a processing chamber. The chamber 2 has a ceiling plate 5 and a bottom plate 6 at the upper and lower open ends of a chamber body 4 in an airtight manner. Inside the chamber 2, a heater unit 3 is provided so as to be able to move up and down.

The chamber body 4 has a large-diameter hole 7 and a small-diameter hole 8 contiguous to and concentric with the large-diameter hole 7.
A cylindrical heater 9 is fitted into the large-diameter hole 7, and a gap is partially formed. An inner cylinder 10 is fitted inside the cylindrical heater 9, and an inner flange 11 is formed at a lower end of the inner cylinder 10, and an inner diameter of the inner flange 11 is the same as the small-diameter hole 8. The inner cylinder 10 is mounted on a step between the large diameter hole 7 and the small diameter hole 8.

The chamber body 4, the cylindrical heater 9,
An exhaust port 12 penetrating the inner cylinder 10 is formed, and an exhaust line (not shown) is connected to the exhaust port 12.

A wafer input port 15 having a flat opening is formed in the chamber main body 4.
5 communicates with the upper part of the small diameter hole 8. The wafer inlet 15 is opened and closed by a gate valve (not shown),
Airtight closure is possible.

A shower head 16 is mounted on the ceiling plate 5, and the shower head 16 is
7, an intermediate plate 18 and a shower plate 19.

The gas introduction cover 17 is air-tightly fixed to the ceiling plate 5 via an O-ring 14. A large-diameter recess 21 and a small-diameter recess 22 are formed concentrically and vertically on the lower surface of the gas introduction cover 17, A step is provided at the boundary between the large-diameter recess 21 and the small-diameter recess 22 located inside.

The intermediate plate 18 is fitted in the large-diameter recess 21. The intermediate plate 18 is in contact with the stepped portion, and a first mixing space 23 is defined by the intermediate plate 18 and the gas introduction cover 17. The upper portion of the shower plate 19 is fitted into the large-diameter recess 21, and the intermediate plate 18 is held between the shower plate 19 and the step portion. A circular recess 24 is formed on the upper surface of the shower plate 19 concentrically with the first mixing space 23, and a second mixing space 25 is defined by the shower plate 19 and the intermediate plate 18. The lower portion of the shower plate 19 is fitted to the center of the ceiling plate 5.

Two gas inlets 26, 27 are formed in the upper surface of the gas inlet cover 17, and the gas inlets 26, 27 are formed.
7, gas supply pipes 28 and 29 are connected.
Reference numerals 8 and 29 are respectively connected to gas supply sources of gas A and gas B (not shown). A TC port 31 is provided at the center of the upper surface of the gas introduction cover 17.
, A thermocouple (not shown) is inserted.

As shown in FIG. 11, the intermediate plate 18 is provided with a thermocouple through hole 32 at the center thereof, and an appropriate number of gas communication holes 33 around the thermocouple through hole 32. Hole 33
Are uniformly distributed on the intermediate plate 18.

A large number of small-diameter gas ejection holes 34 are formed in the lower surface of the shower plate 19, and the gas ejection holes 34 are uniformly distributed within a circle having the same diameter as the diameter of a wafer described later. The gas ejection holes 34 communicate with the second mixing space 25. In the center of the shower plate 19, a thermocouple hole 35 is provided.
Is bored so as not to penetrate, and the T
A thermocouple (not shown) is attached through a C port 31 and the thermocouple through hole 32, so that the temperature of the shower plate 19 can be monitored by the thermocouple.

The heater unit 3 has a susceptor 36, a flat heater 37, a cylindrical body 38, and a support disk 39. The outer diameter of the cylindrical body 38 and the diameter of the support disk 39 are the same. The cylindrical body 38 is provided concentrically on the support disk 39, and the flat heater 37 is provided horizontally inside the cylindrical body 38. Have been. The flat heater 3
Reference numeral 7 denotes a disk shape, which is located in the upper part of the cylindrical body 38 and is mounted on the support disk 39 by a support frame (not shown).

The susceptor 36 is mounted on the upper end of the cylindrical body 38.
Is installed. The susceptor 36 has a disk shape,
A wafer mounting portion 41 having a tapered periphery is provided on the upper surface, and a wafer 42 is mounted on the wafer mounting portion 41.

An upper through hole 43 is formed in the susceptor 36, a middle through hole 44 is formed in the flat heater 37, and a lower through hole 45 is formed in the support disk 39. The middle through hole 44 and the lower through hole 45
Are on the same axis, and the lower through hole 45 is
4 and the upper through hole 43 are smaller in diameter.

A wafer support pin 46 is loosely inserted through the upper through hole 43 and the middle through hole 44. The lower portion of the wafer support pin 46 has a small diameter and a step 47 at the boundary.
Is formed. A small-diameter portion of the wafer support pin 46 is slidably fitted in the lower through hole 45, and the step 4
7 is a stopper. The wafer support pin 46
Are urged upward by required means such as a spring (not shown).

A hollow shaft 48 extending downward is fixed to the center of the support disk 39. The hollow shaft 48 is connected to the bottom plate 6.
And can be moved up and down by a lifting means (not shown). Further, a bellows 49 is provided at a penetrating portion between the bottom plate 6 and the hollow shaft 48, and is hermetically sealed by the bellows 49. A power supply cable (not shown) is inserted into the hollow shaft 48, and the power supply cable is connected to the flat heater 37.

When the processing of the wafer 42 is started by the cold wall reactor 1, the hollow shaft 48 and the heater unit 3 are in a lowered state, the support disk 39 is close to the bottom plate 6, and the wafer The lower end of the support pin 46 abuts against the bottom plate 6, and the wafer support pin 46 is relatively pushed up.
6 protrudes from the susceptor 36.

When a gate valve (not shown) is opened, the wafer 42 is carried in from the wafer inlet 15 by a wafer transfer machine (not shown), and the wafer 42 is placed on the wafer support pins 46.

The gate valve is closed. The hollow shaft 48 is raised, and the heater unit 3 is raised. The wafer support pins 46 do not move while the support disk 39 moves up the small-diameter portion. In a state where the support disk 39 is in contact with the step 47, the wafer support pins 46 are mounted on the upper surface of the susceptor 36. The wafer 42 on the wafer support pins 46 is slightly lowered, and the wafer 42 on the wafer support pins 46 is transferred to the wafer mounting portion 41, and the heater unit 3 contacts the shower plate 19 at a position close to the ceiling plate 5. It is stopped so as to form a required gap therebetween.

The processing chamber is evacuated from the exhaust port 12 by an exhaust line (not shown), and the pressure in the chamber 2 is reduced. Power is supplied to the flat heater 37, and the flat heater 37 heats the wafer 42 to a predetermined temperature from the back surface. The temperature of the shower plate 19 is monitored by a thermocouple (not shown), the amount of power supplied to the flat heater 37 is feedback-controlled, and the temperature of the susceptor 36 and the periphery of the wafer 42 is adjusted.

From the gas supply pipe 28 to the gas inlet 2
6, the gas A is supplied to the first mixing space 23, and at the same time, the gas B is introduced from the gas supply pipe 29 to the first mixing space 23 via the gas inlet 27, and the gas A separately introduced And the gas B are mixed while diffusing in the first mixing space 23. Next, the mixed gas flows into the second mixing space 25 through the gas communication holes 33, and is further mixed while being diffused to become a processing gas. The processing gas is blown onto the wafer 42 through the gas ejection holes 34, and a reaction product generated by heating the processing gas is deposited on the wafer 42, and a film is formed on the surface of the wafer 42.

The exhaust gas after the reaction is discharged from the exhaust port 12. The inner cylinder 10 is heated to a predetermined temperature by the cylindrical heater 9 to prevent film formation on the inner wall surface of the inner cylinder 10 and solidification of the exhaust gas component.

[0026]

However, in the first mixing space 23, the gas A and the gas B are separately introduced from the two gas inlets 26 and 27, respectively. The gas A and the gas B
The gas A and the gas B often pass through the gas communication holes 33 without being sufficiently mixed.

The mixed gas that has passed through the gas communication holes 33 is mixed while being further diffused in the second mixing space 25, but the diffusion is faster than the mixing. Therefore, the processing gas that is not sufficiently mixed is blown from the gas ejection holes 34 of the shower plate 19 to the wafer 42 while the gas component is biased, and the vicinity of the surface of the wafer 42 is converted to the gas component. There is a possibility that there is a bias, the reaction product becomes non-uniform, a film having a uniform concentration composition cannot be obtained, the product quality is reduced, and the yield is reduced.

The present invention has been made in view of the above circumstances and aims to improve the product quality and the yield by sufficiently mixing a plurality of types of gases to form a film having a uniform processing gas concentration and a uniform concentration composition. is there.

[0029]

SUMMARY OF THE INVENTION The present invention provides an airtight processing chamber, a substrate mounting member provided in the processing chamber, heating means for heating a substrate mounted on the substrate mounting member, In a semiconductor manufacturing apparatus provided with a gas ejection hole for ejecting a processing gas in the direction of the substrate mounting surface provided at a position facing the substrate mounting surface of the mounting member, a first main surface on an upstream side; A mixer plate having a downstream second main surface is installed on the upstream side of the gas ejection holes, and a plurality of independent grooves are recessed in the first main surface, and different types of gas are supplied to the grooves. In the second main surface, at least one dent is provided so as to extend over at least two of the independent grooves, and the dent and the plurality of grooves are communicated with each other by a flow path. Different types of gases flowing through the depression are mixed in the depression, and the mixed gas is Through the scan jetting holes, it relates to a semiconductor manufacturing apparatus was set to be ejected to the substrate mounting surface direction.

A plurality of gases are separately supplied to a plurality of independent grooves in the first main surface, and the gases are introduced from the grooves into the depressions in the second main surface through the flow paths. ,
The plurality of gases are mixed in and around the depression. The mixed gas is diffused and mixed between the mixer plate and the gas ejection holes to be uniform. A sufficiently mixed processing gas is sprayed onto the substrate on the mounting member from the gas ejection hole, and a uniform reaction product is deposited on the substrate surface by uniform heating of the processing gas, and the substrate surface is coated with a uniform reaction product. A film having a uniform concentration composition is formed.

[0031]

Embodiments of the present invention will be described below with reference to the drawings.

A first embodiment of the present invention will be described with reference to FIGS.

In FIGS. 1 to 6, those equivalent to those in FIGS. 10 and 11 are denoted by the same reference numerals.

FIG. 1 shows an example in which the present invention is applied to a low-pressure thermal CVD apparatus for processing single wafers in the same manner as the above-mentioned conventional example. The reduced pressure thermal CVD apparatus has a cold wall reactor 1.

The space formed in the chamber 2 constitutes a processing chamber, and the processing chamber is provided with a heater unit 3 so as to be able to move up and down. The chamber 2 has ceiling plates at upper and lower opening ends of a cylindrical chamber body 4 respectively. 5 and a bottom plate 6 are hermetically sealed.

The ceiling plate 5 has a shower head 51
Is provided. The shower head 51 includes a gas introduction cover 17, a mixer plate 52, an intermediate plate 53, and a shower plate 1.
9.

The gas introduction cover 17 is hermetically attached to the ceiling plate 5 via an O-ring 14. A large-diameter concave portion 21 and a small-diameter concave portion 22 are formed concentrically and vertically on the lower surface of the gas introduction cover 17, The large-diameter concave portion 2 located on the outside
A stepped portion is provided at the boundary between 1 and the small-diameter concave portion 22 located inside.

The mixer plate 52 is fitted in the small-diameter recess 22. The mixer plate 52 is formed in a disk shape by cutting an aluminum plate, and the outer diameter is the same as the diameter of the small-diameter recess 22, and a flange 54 having the same diameter as the large-diameter recess 21 is provided on the outer periphery. Is in contact with the step.

The upper part of the shower plate 19 is fitted into the large-diameter recess 21. The shower plate 19 has a short columnar shape made of aluminum, and a circular concave portion 24 is formed on the upper surface concentrically with the large diameter concave portion 21. The disk-shaped intermediate plate 53 is fitted into the circular recess 24. The intermediate plate 5
3 is made of aluminum and has circular concave portions 55 and 56 on both sides.
Are formed. A first mixing space 58 is defined by the intermediate plate 53 and the gas introduction cover 17, and a second mixing space 25 is defined by the intermediate plate 53 and the shower plate 19.
Is defined.

Two gas inlets 26 and 27 are formed in the upper surface of the gas inlet cover 17, and a gas supply pipe 28 and a gas supply pipe 29 are connected to the gas inlet 26 and the gas inlet 27. The gas supply pipe 28 and the gas supply pipe 29 are connected to gas supply sources of a gas A and a gas B (not shown), respectively. The center of the upper surface of the gas introduction cover 17 has a T
A C port 31 is provided, and a thermocouple (not shown) is inserted from the TC port 31.

In the center of the mixer plate 52, a thermocouple through hole 59 is provided.
The thermocouple through hole 59 is located at a position overlapping the TC port 31.

The upper surface (upstream surface) of the mixer plate 52 is the first
The lower surface (downstream surface) is the second main surface 61.
It has become. The first main surface 60 is in close contact with the inner surface of the gas introduction cover 17, and two independent gas A introduction grooves 62 and gas B introduction grooves 63 do not interfere with each other on the first main surface 60. Thus, the first main surface 60 is spirally formed outward from the center of the first main surface 60. One of the gas A introduction grooves 62 communicates with the gas introduction port 26 near the end of the spiral center, and the other gas B introduction groove 63 communicates with the gas introduction port 27 near the end of the spiral center. I have.

The second main surface 61 has the gas A introduction groove 6
2. A concave portion 64 having an outer diameter equal to the outer diameter of the gas B introduction groove 63 is formed.
Are formed along the boundary between the gas A introduction groove 62 and the gas B introduction groove 63 by a required number. As shown in FIGS. 3 and 4, the gas merging depression 65 partially overlaps the gas A introduction groove 62 and the gas B introduction groove 63. An A flow path 66 and a B flow path 67 are penetrated through an overlapping portion of the gas A introduction groove 62, the gas B introduction groove 63, and the gas merging recess 65, and the adjacent A flow path 66 and B flow path 67 are provided. And have the same hole diameter. The positional relationship between the gas merging depression 65 and the A channel 66 and the B channel 67 is as shown in FIG.
The gas merging depression 65 so as to straddle the flow path 66 and the B flow path 67.
Has been determined.

As shown in FIG. 2, the A flow path 66, the B flow path 67, and the gas merging recess 65 are arranged at equal intervals when the gas A introduction groove 62 and the gas B introduction groove 63 are linearly developed. And the holes are arranged so as to be evenly distributed on the second main surface 61, and the hole diameters of the A channel 66 and the B channel 67 are far from the gas inlets 26 and 27 as shown in FIG. The diameter gradually becomes larger (the right side in the figure indicates the center side).

As shown in FIG. 6, the intermediate plate 53 is formed with a thermocouple through hole 57 at the center, and a required number of gas communication holes 68 are provided around the thermocouple through hole 57. The gas communication hole 6
Numeral 8 is not located directly below the gas merging depression 65, but is arranged at a position out of phase with the gas merging depression 65, and the hole diameter of the gas communication hole 68 becomes larger as being closer to the center of the intermediate plate 53. ing.

The gas ejection holes 3 are formed on the lower surface of the shower plate 19.
The gas ejection hole 34 has a smaller diameter than the gas merging recess 65 and the gas communication hole 68, and communicates with the circular recess 24 and the second mixing space 25.

A thermocouple (not shown) is attached to the thermocouple hole 35 of the shower plate 19 through the TC port 31 and the thermocouple holes 57 and 59, and the temperature of the shower plate 19 is monitored by the thermocouple. It is getting.

The chamber main body 4 has a large-diameter hole 7 and small-diameter holes 8 contiguous to and concentric with the large-diameter hole 7 above and below. A cylindrical heater 9 is fitted in the large-diameter hole 7, and an inner cylinder 10 is fitted in the cylindrical heater 9. The inner cylinder 10 is provided with an inner flange 11 at a lower end, and the inner diameter of the inner flange 11 is the same as that of the small-diameter hole 8.
0 is placed on the stepped portion between the large-diameter hole 7 and the small-diameter hole 8.

An exhaust port 12 is formed through the chamber body 4, the cylindrical heater 9, and the inner cylinder 10, and an exhaust line (not shown) is connected to the exhaust port 12.

A wafer inlet 15 having a flat opening is formed in the chamber body 4. The wafer inlet 15 is located at a substantially intermediate height of the chamber main body 4, communicates with the small-diameter hole 8, is opened and closed by a gate valve (not shown), and can be airtightly closed.

The heater unit 3 has a susceptor 36, a flat heater 37, a cylindrical body 38, and a support disk 39. The outer diameter of the cylindrical body 38 is the same as the diameter of the support disk 39, and the cylindrical body 38 is placed on the support disk 39.
Are provided concentrically, and the flat heater 37 is provided horizontally inside the cylindrical body 38. The flat heater 37 has a disk shape, and is located at an upper portion in the cylindrical body 38.
It is mounted on the support disk 39 by a support frame (not shown).

The susceptor 36 is mounted on the upper end of the cylindrical body 38.
Is installed. The susceptor 36 has a disk shape,
A wafer mounting portion 41 is recessed on the upper surface, and a wafer 42 is mounted on the wafer mounting portion 41.

An upper through hole 43 is formed in the susceptor 36, a middle through hole 44 is formed in the flat heater 37, and a lower through hole 45 is formed in the support disk 39. The upper through hole 43, the middle through hole 44, and the lower through hole 45 are on the same axis, and the lower through hole 45 has a smaller diameter than the middle through hole 44 and the upper through hole 43.

The wafer support pins 46 pass through the upper through holes 43 and the middle through holes 44, and the wafer support pins 4
The lower small diameter portion 6 is slidably fitted in the lower through hole 45, and the step 47 is a stopper.

A hollow shaft 48 extending downward is fixed to the center of the support disk 39. The hollow shaft 48 passes through the bottom plate 6 and can be moved up and down by a lifting means (not shown).
A bellows 49 is hermetically mounted between the bottom plate 6 and the hollow shaft 48, and the bellows 49 allows the bottom plate 6
And the hollow shaft 48 are hermetically sealed. . A power supply cable (not shown) is provided inside the hollow shaft 48.
And the power supply cable is connected to the flat heater 37.
It is connected to the.

The operation will be described below.

When the wafer 42 is loaded into the chamber 2, the hollow shaft 48 and the heater unit 3 are in a lowered state, and the lower end of the wafer support pin 46 abuts on the bottom plate 6, and the wafer support The upper part of the pin 46 protrudes from the susceptor 36.

When the gate valve (not shown) is opened, the wafer 42 is loaded from the wafer input port 15 by a wafer transfer device (not shown), and the wafer 42 is placed on the wafer support pins 46. Is placed.

When the gate valve is closed and the hollow shaft 48 is raised, the heater unit 3 is raised. The wafer support pins 46 are relatively lowered with respect to the susceptor 36, and the wafer 42 is transferred from the support pins 46 to the wafer mounting portion 41 with the upper ends of the wafer support pins 46 being lowered below the susceptor 36. Is done. The heater unit 3 is stopped with a space left above.

The processing chamber is evacuated from the exhaust port 12 by an exhaust line (not shown), and the pressure in the chamber 2 is reduced. Power is supplied to the flat heater 37, and the flat heater 37 heats the wafer 42 to a predetermined temperature from the back surface. The temperature of the shower plate 19 is monitored by a thermocouple (not shown), the amount of power supplied to the flat heater 37 is feedback-controlled, and the temperature around the susceptor 36 and the wafer 42 is adjusted to a predetermined temperature.

From the gas supply pipe 28 to the gas inlet 2
6, gas A is introduced near the center of the spiral of the gas A introduction groove 62, and gas B is introduced from the gas supply pipe 29 through the gas introduction port 27 near the center of the spiral of the gas B introduction groove 63. Is done.

The gas A introduction groove 62 and the gas B introduction groove 63
Are gas-tightly closed by the gas introduction cover 17, the gas A introduction groove 62 and the gas B introduction groove 63 become independent gas flow paths, and the gas A flows into the gas A introduction groove 6.
2 and the gas B separately flows through the gas B introduction groove 63.

The gas A is ejected from the A channel 66 to the gas converging recess 65, and the gas B is simultaneously ejected from the B channel 67 to the gas converging recess 65. Gas A and gas B are mixed for the first time. The gas A and the gas B are discharged into the gas merging recess 65 adjacently and at the same flow rate. Since the gas merging depression 65 is a small space, it is easy to mix. The gas A and the gas B are similarly mixed in all the gas merging depressions 65.

As described above, the A channel 66 and the B channel 6
Since the hole diameter of the gas inlet 7 increases as the distance from the gas inlets 26 and 27 increases, the pressure gradient generated by the flow resistance of the A flow path 66 and the B flow path 67 causes the gas inlet 2 to have a larger diameter.
The flow rate is prevented from decreasing as the distance from 6, 27 increases.
The flow rates of the gas A and the gas B flowing out to all the gas merging depressions 65 are set to be the same.

The gas merging recess 65, the A flow path 66, and the B flow path 67 are arranged at equal intervals when the gas A introduction groove 62 and the gas B introduction groove 63 are linearly developed. Since the gas merging depressions 65 are evenly dispersed in the mixer plate 52, the mixed gas is jetted into the first mixing space 58 at a uniform flow rate.

The mixed gas ejected into the first mixing space 58 is further dispersed and mixed, and is ejected from the gas communication hole 68 of the intermediate plate 53 into the second mixing space 25. Since the gas communication holes 68 are out of phase at the same interval as the gas merging depressions 65, the mixed gas is further mixed before being ejected from the gas merging depressions 65 and reaching the gas communication holes 68. Further, the mixed gas jetted from the gas merging depression 65 does not flow directly into the gas communication hole 68, and the mixed gas flow is rectified.

Further, since the hole diameter of the gas communication hole 68 is larger as it is closer to the center, a large amount of the mixed gas flows in the second mixing space 2.
5 and the gas communication hole 6 at the center.
The low distribution density of 8 is compensated for. The intermediate plate 53 has a simple structure and can be easily replaced and remanufactured.

The mixed gas is further diffused and mixed in the second mixing space 25 to form a uniform processing gas. The processing gas is blown from the jet port of the shower plate 19 onto the wafer 42, and The reaction product resulting from the heating of the gas has a uniform composition, the uniform reaction product is deposited on the wafer 42, and a film is formed on the surface of the wafer 42.

The exhaust gas after the reaction is discharged from the exhaust port 12. The inner cylinder 10 is heated to a predetermined temperature by the cylindrical heater 9 to prevent film formation on the inner wall surface of the inner cylinder 10 and solidification of components of exhaust gas.

After the film formation on the wafer 42 is completed, the supply of the gases A and B from the gas supply pipes 28 and 29 is stopped, and the power of the flat heater 37 is turned off.
The hollow shaft 48 and the heater unit 3 are lowered,
The lower end of the wafer support pin 46 abuts against the bottom plate 6, the wafer support pin 46 is relatively raised, and the upper end of the wafer support pin 46 supports the wafer 42.

The gate valve (not shown) is opened, and the wafer 42 is carried out of the wafer input port 15 by the wafer transfer device (not shown).

A second embodiment of the present invention will be described with reference to FIGS.

7 to 9, the same components as those in FIGS. 1 to 6 are denoted by the same reference numerals.

FIG. 7 shows another mixer plate 69.
In the configuration similar to that of the first embodiment, the mixer plate 69 is used instead of the mixer plate 52.

The mixer plate 69 is formed in a disk shape by cutting an aluminum plate, and has a flange 54 on the outer periphery.
A thermocouple through-hole 59 is formed at the center, and two independent gas A introduction grooves 71 and gas B introduction grooves 72 are formed in the upstream surface (first main surface 60) of the mixer plate 69 in a concentric multiple circular shape. Have been.

The gas A introduction groove 71 has a shape in which a plurality of semicircular branch grooves 74, 74 are branched and communicated on both sides of a main groove 73 extending in the radial direction. The branch grooves 74 on both sides are formed concentrically and multiplexly. The outermost branch grooves 74, 74 communicate with each other and have an annular shape.

The gas B introduction groove 72 is also provided in the radial main groove 7.
5 has a plurality of semicircular arc-shaped branch grooves 76, which are branched and communicated on both sides. The main groove 75 is located symmetrically with the main groove 73. The branch grooves 76, 76 are formed at equal intervals and between the branch grooves 74, 74, and the branch grooves 76, 76 have a semicircular shape, and the branch grooves 76, 76 on both sides are formed in a concentric multiple. The innermost branch grooves 76, 76 communicate with each other and have a circular shape.

The upstream surface of the mixer plate 69 (the second main surface 6
1) (not shown, see FIG. 3) has a recess 64 (not shown,
(See FIG. 3). The concave portion 64 is further provided with a gas converging recess 65. The gas merging recess 65 is provided between the branch groove 74 and the branch groove 76, and the gas merging recess 65 and the branch grooves 74 and 76 overlap with the branch groove 74 and the branch groove 76. Between channel A 77 and B
Channels 78 are drilled adjacent to each other. The adjacent A flow path 7
7. The B channel 78 has the same hole diameter and allows different gases to flow.

The A flow path 77, the B flow path 78, and the gas merging recess 65 are equally spaced when the branch grooves 74, 76 are straight, and are evenly distributed on the second main surface 61. The hole diameters of the A flow path 77 and the B flow path 78 gradually increase as the distance from the gas introduction ports 26 and 27 increases, as shown in FIG.

Since the mixer plate 69 is used in the same manner as in FIG. 1 in the first embodiment, the operation will be described with reference to FIG.

The gas A is introduced into the main groove 73 and flows radially outward, and the gas A flows from the main groove 73 to the branch grooves 74, 74.
The gas B flows in the circumferential direction and flows in the main groove 7.
5 and flows radially outward, and from the main groove 75 into the branch grooves 76, and flows in the circumferential direction.

The gas A flowing through the branch grooves 74, 74 is jetted from the A channel 77 into the gas merging recess 65,
The gas B flowing through the branch grooves 76, 76
8, the gas A and the gas B are mixed for the first time in the gas merged depression 65. Since the gas A and the gas B are ejected to the gas merging recess 65 adjacently and at the same flow rate, they are easily mixed.

Since the diameters of the A flow path 77 and the B flow path 78 increase as the distance from the gas introduction ports 26 and 27 increases, the flow rate increases as the distance from the gas introduction ports 26 and 27 increases due to the pressure gradient. Is prevented from decreasing, and the gas flow rates of all the gas merging depressions 65 become substantially the same.

The gas converging cavities 65 and the flow path A flow paths 77 and B flow paths 78 are arranged so as to be equidistant when the branch grooves 74 and 76 are linear. Since the elements 65 are evenly distributed on the mixer plate 69, the mixed gas is jetted into the first mixing space 58 at an even flow rate.

The mixed gas jetted into the first mixing space 58 is further dispersed and mixed, and jetted from the gas communication hole 68 of the intermediate plate 53 into the second mixing space 25.

The mixed gas is further diffused and mixed in the second mixing space 25 to form a uniform processing gas. The processing gas is blown from the gas ejection holes 34 onto the wafer 42, and a reaction product by heating is generated. A uniform reaction product having a uniform composition is deposited on the wafer 42, and a film is formed on the surface of the wafer 42.

The semiconductor manufacturing apparatus of the present invention is not limited to the low pressure thermal CVD apparatus in the above-described embodiment, but can be applied to other substrate processing such as impurity diffusion and etching. The number of types and the number of grooves may be three or more, and it goes without saying that a film having a uniform composition can be obtained even if the intermediate plate is omitted.

[0088]

As described above, according to the present invention, an airtight processing chamber, a substrate mounting member provided in the processing chamber, and a heating means for heating a substrate mounted on the substrate mounting member, In a semiconductor manufacturing apparatus provided with a gas ejection hole for ejecting the processing gas in the direction of the substrate placement surface, the gas ejection hole being provided at a position facing the substrate placement surface of the substrate placement member, A mixer plate having a main surface and a second main surface on the downstream side is installed on the upstream side of the gas ejection hole, and a plurality of independent grooves are recessed in the first main surface, and different types of gas are provided in the grooves. The second main surface is provided with at least one depression extending over at least two of the independent grooves, and the depression and the plurality of grooves are communicated with each other by a flow path. Different types of gases flowing in the plurality of grooves were mixed in the depression and mixed Gas is ejected in the direction of the substrate mounting surface through the gas ejection holes, a plurality of gases are separately supplied to the plurality of independent grooves, and a plurality of gases are supplied from the grooves. Since the gas is introduced into the depression through the flow path, a plurality of gases are mixed in and around the depression, and then diffused and mixed between the mixer plate and the gas ejection holes, and are further homogenized and sufficiently mixed. Since the mixed processing gas is sprayed onto the substrate on the substrate mounting member from the gas ejection hole, a reaction product by heating has a uniform composition,
A film having a uniform concentration composition is formed on the substrate surface, and various excellent effects such as an improvement in product quality and an improvement in yield are exhibited.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view showing a first embodiment of the present invention.

FIG. 2 is a plan view of a mixer plate according to the embodiment.

FIG. 3 is a view as viewed in the direction of arrows AA in FIG. 2;

FIG. 4 is an enlarged sectional view of a portion B in FIG. 3;

FIG. 5 is a view taken in the direction of the arrows CC in FIG. 4;

FIG. 6 is a plan view of the intermediate plate in the embodiment.

FIG. 7 is a plan view of a mixer plate according to a second embodiment of the present invention.

FIG. 8 is an enlarged sectional view of a portion D in FIG. 7;

FIG. 9 is a view as seen from the direction of arrows EE in FIG. 8;

FIG. 10 is a sectional view of a conventional example.

FIG. 11 is a plan view of an intermediate plate in the conventional example.

[Description of Signs] 2 chamber 3 heater unit 5 ceiling plate 17 gas introduction cover 19 shower plate 25 second mixing space 26 gas introduction port 27 gas introduction port 34 gas ejection hole 36 susceptor 37 flat heater 41 wafer mounting section 42 wafer 51 Shower head 52 Mixer plate 53 Intermediate plate 58 First mixing space 60 First main surface 61 Second main surface 62 Gas A introduction groove 63 Gas B introduction groove 65 Gas merge recess 66 A flow path 67 B flow path 68 Gas communication hole 69 Mixer plate 71 Gas A introduction groove 72 Gas B introduction groove 73 Main groove 74 Branch groove 75 Main groove 76 Branch groove 77 A flow path 78 B flow path

Claims (1)

[Claims] An airtight processing chamber; a substrate mounting member provided in the processing chamber; heating means for heating a substrate mounted on the substrate mounting member; and a substrate mounting surface of the substrate mounting member. And a gas ejection hole for ejecting a processing gas in the direction of the substrate mounting surface, the first main surface on the upstream side and the second main surface on the downstream side. A mixer plate having a plurality of independent grooves is provided on the upstream side of the gas ejection holes, and a plurality of independent grooves are formed in the first main surface so that different types of gases are supplied to the grooves. At least one dent is formed in the surface so as to span at least two of the independent grooves, the dent and the plurality of grooves are communicated by a flow path, and different types of gases flowing through the plurality of grooves are provided. The mixed gas is mixed in the depression, and the mixed gas is passed through the gas ejection hole to the substrate. A semiconductor manufacturing apparatus characterized by being ejected in the direction of a mounting surface.