WO2019119907A1

WO2019119907A1 - Vapor deposition device and method

Info

Publication number: WO2019119907A1
Application number: PCT/CN2018/106825
Authority: WO
Inventors: 胡冬冬; 李娜; 陈璐; 许开东; 候永刚; 王铖熠; 车东晨; 孙伟
Original assignee: 江苏鲁汶仪器有限公司
Priority date: 2017-12-22
Filing date: 2018-09-21
Publication date: 2019-06-27
Also published as: CN108048820A

Abstract

A vapor deposition device, comprising a housing (10) which is provided with a concave cavity (11) having an upward opening; a wafer stage (20) disposed inside the concave cavity (11); a sealing assembly (30) for sealing the concave cavity (11), so that a vacuum cavity is formed by the sealing assembly and the concave cavity (11); a gas homogenizing assembly (40) disposed in the vacuum cavity, located above the wafer stage (20), and guiding gas out toward the wafer stage (20); and a gas inlet assembly (50) that penetrates through the sealing assembly (30) and comprises a cleaning gas path and a pulse gas path, the cleaning gas path being communicated with the gas homogenizing assembly, and the pulse gas path being directly communicated with the concave cavity (11). Also disclosed is a vapor deposition method.

Description

Vapor deposition apparatus and vapor deposition method

Technical field

The present invention relates to the field of material preparation technology, and in particular, to a vapor deposition apparatus and a vapor deposition method.

Background technique

Atomic Layer Deposition (ALD) is a technique that deposits a substance layer by layer onto a surface of a substrate in the form of a monoatomic film. Compared with the traditional chemical vapor deposition method, in the atomic layer deposition process, the chemical reaction of a new atomic layer film is directly related to the previous layer, so that only one layer of atoms is deposited per reaction. As a cutting-edge technology in the semiconductor industry, Atomic Layer Deposition has unparalleled advantages in terms of thin film deposition thickness accuracy, step coverage and conformality. It is a pulsed or gas phase precursor source in a high vacuum environment. A process in which a continuous mode is alternately introduced into a process chamber and physical adsorption and chemical reactions are performed on a substrate to deposit a film. The superiority of the atomic layer deposition process makes it widely used in the most advanced chip manufacturing processes such as 45nm and 22nm.

Plasma enhanced atomic layer deposition (PEALD) is very similar to the conventional atomic layer deposition principle except that one or more common reactants in the atomic layer deposition are replaced by plasma in the atomic layer growth step to react with the precursor. The introduction of plasma has improved the traditional atomic layer deposition technology and has more prominent advantages.

Plasma-enhanced chemical vapor deposition (PECVD) is a method of ionizing a gas containing a film-constituting atom by means of microwave or radio frequency, and locally forming a plasma, and the plasma chemical activity is strong, and it is easy to react and deposit on the substrate. Film. In order to allow the chemical reaction to proceed at a lower temperature, the activity of the plasma is utilized to promote the reaction, and thus this chemical vapor deposition technique is called plasma enhanced chemical vapor deposition (PECVD). The film grown by the plasma enhanced chemical vapor deposition process has the advantages of low substrate temperature, fast deposition rate, and good film formation quality. There are fewer pinholes and it is not easy to crack. Therefore, the plasma enhanced chemical vapor deposition process is also the most common and conventional thin film growth process in semiconductor chip processes.

At present, these three growth processes each have their own advantages, but for future applications of advanced chips, sensors, MEMS, etc., more and more cases require three processes to be unified in one reaction chamber to achieve complexity. Film growth. The most typical applications are: alternating growth of ALD films or PECVD films; but the integration of the three processes into a single reaction chamber requires an optimized gas path design and combines the advantages of the three devices.

Therefore, it is desirable to provide an optimized vapor deposition apparatus that is simple in structure and can be used in both plasma enhanced chemical vapor deposition systems and/or atomic layer deposition systems and/or plasma enhanced atomic layer deposition systems.

Summary of the invention

It is an object of the present invention to provide a vapor deposition apparatus comprising: a housing provided with an upwardly open cavity; and a carrier table disposed in the cavity, in accordance with an aspect of the present invention, a capping assembly that covers the cavity, the capping assembly forming a vacuum chamber with the cavity; a homogenizing assembly disposed inside the vacuum chamber and located at the Above the stage, and deriving gas toward the stage; and an air intake assembly extending through the cover assembly and including a cleaning gas path and a pulse gas path, the cleaning gas path and the gas distribution component In the same manner, the pulse gas path directly communicates with the cavity. The vapor deposition apparatus of the present invention has a simple structure and can be used in both a plasma enhanced chemical vapor deposition system and/or an atomic layer deposition system and/or a plasma enhanced atomic layer deposition system.

In the vapor deposition apparatus of the present invention, preferably, the capping assembly includes an annular main cap, an insulating ring, and a cap main body, the annular main cap being disposed at a top end of the casing and opposite to the cavity The cover body covers the cavity, an outer edge of the cover body is disposed on the annular main cover, and the insulating ring is disposed on the cover body and the annular main cover The homogenizing assembly is disposed on a bottom surface of the cap body.

In the vapor deposition apparatus of the present invention, preferably, the insulating ring includes an annular body extending in the axial direction and an annular flange extending radially outward, the annular flange being disposed at a top of the annular main cover The annular body is attached to the inner side wall of the annular main cover, the outer edge of the cover body is disposed on the annular flange, and is fixed on the annular main cover by a fastener .

In the vapor deposition apparatus of the present invention, preferably, the cap body includes a closed cooling groove and an axial through hole through which the intake member passes, and the closed cooling groove is formed on the cap body. And the closed cooling tank includes a coolant inlet and a coolant outlet.

In the vapor deposition apparatus of the present invention, preferably, the air intake assembly includes a cleaning gas passage transmission pipe, a pulse gas passage transmission pipe, an intake seat, a support base, and a split air seat, and the support base is disposed in the seal a cover body aligned with the axial through hole, the air inlet seat is disposed at a top end of the support base, the split air seat is disposed in the support seat, and a bottom end of the split air seat is penetrated The axial through hole communicates with the homogenizing component disposed below the split air seat, and a top end of the split air seat is lower than a top end of the support base to be in the split air seat Forming a dispersion chamber between the top end and the top end of the support base, the pulse gas passage transmission tube sequentially extending through the air inlet seat, the dispersion chamber, the split air seat and the gas distribution assembly and extending to In the cavity, the cleaning gas path transmission pipe only penetrates the gas inlet seat, and the gas distribution gas seat is provided with a plurality of cleaning gas path channels uniformly arranged.

In the vapor deposition apparatus of the present invention, preferably, the air intake assembly further includes a transition seat disposed between the air intake seat and the support base, the transition seat including the pulse gas passage transmission tube a first mounting hole and a cleaning air hole passing through, an upper portion of the cleaning air hole abutting the cleaning air passage transmission tube, a lower portion of the cleaning air hole being inclined toward a center of the transition seat, and communicating to the dispersion chamber .

In the vapor deposition apparatus of the present invention, preferably, the uniform gas assembly includes a first-stage air-conditioning tray and a second-level air-conditioning tray installed at a bottom of the cover body, and the first-stage air-conditioning tray is provided with an upward a first recessed area of the opening, the secondary air-conditioning disc is provided with a second recessed area that is open upward, and the secondary air-conditioning disc is disposed at the bottom of the one-stage air-conditioning disc, and is disposed on the one The outer side of the leveling plate.

In the vapor deposition apparatus of the present invention, preferably, the first-stage homogenizing disk and the second-level uniformizing disk are each provided with a second passage for the pulse gas passage transmission tube to be aligned with the first mounting hole. a mounting hole, the first recessed area is further provided with a plurality of first-level vent holes uniformly arranged, and the second recessed area is further provided with a plurality of second-level vent holes uniformly arranged, and the aperture of the second-level vent hole Less than the pore size of the primary vent.

Further, according to another aspect of the present invention, there is provided a vapor deposition method of coating a semiconductor wafer in a vacuum chamber, comprising: a vapor deposition step of alternately performing the plasma enhancement using the vapor deposition apparatus At least one of a type of chemical vapor deposition process, the atomic layer deposition process, or the plasma enhanced atomic layer deposition process is vapor deposited on a wafer; and a determining step of determining whether the number of coatings in the vapor deposition step is reached The predetermined number of cycles is counted, and if the determination is YES, the vapor deposition process is stopped; if the determination is negative, the vapor deposition step is repeated.

In the vapor deposition method of the present invention, preferably, in the plasma enhanced chemical vapor deposition process, the pulse gas path transmission pipe gas path is closed, and a reaction gas is introduced into the cleaning gas path transmission pipe. The reaction gas sequentially passes through the dispersion chamber and the uniform gas assembly, and is deposited on an upper surface of the wafer disposed on the stage, and a plating film is formed on an upper surface of the wafer, the atomic layer In the deposition process, the cleaning gas passage transmission pipe is closed, and a reaction gas is introduced into the pulse gas passage transmission pipe, and the reaction gas is directly deposited on the upper surface of the wafer disposed on the stage. Forming a plating film on the upper surface of the wafer. In the plasma enhanced atomic layer deposition process, first, a pulse gas is introduced into the precursor through the pulse gas passage tube and enters a vacuum chamber at the wafer. Surface chemical adsorption; then passing the cleaning gas through the cleaning gas path transfer tube, entering the cavity through the homogenizing component, cleaning the reaction chamber, eliminating by-products and excess precursor; and then passing the pulse The road transfer pipe gas path is passed into the plasma to react with the adsorbed precursor to form a film; finally, the cleaning gas is passed through the cleaning gas path transfer tube, and enters the vacuum chamber for cleaning to form on the upper surface of the wafer. Coating.

Through the above technical solution, the vapor deposition apparatus of the present invention can make the reaction gas streams of different growth processes do not interfere with each other, and at the same time share some identical components, and combine them in a single reaction chamber, which is easy to accurately control. The design is compatible with plasma-enhanced chemical vapor deposition systems, atomic layer deposition systems, and plasma-enhanced atomic layer deposition systems. These three systems can be performed without interference, and can also be cross-coated for coating reactions, such as plasma first. The enhanced chemical vapor deposition method is used to coat the base layer, and then the second layer of the film is deposited by atomic layer deposition, followed by plasma enhanced chemical vapor deposition to coat the film, etc., according to the actual process results.

DRAWINGS

Figure 1 is a cross-sectional view of a vapor deposition apparatus of the present invention;

Figure 2 is a perspective view of a closure assembly of the vapor deposition apparatus of the present invention;

Figure 3 is a cross-sectional view of a closure assembly of the vapor deposition apparatus of the present invention;

Figure 4 is a perspective view of an intake assembly of the vapor deposition apparatus of the present invention;

Figure 5 is a cross-sectional view along the x direction of the intake assembly of the vapor deposition apparatus of the present invention;

Figure 6 is a cross-sectional view along the y direction of the intake assembly of the vapor deposition apparatus of the present invention;

Figure 7 is a perspective view of a split air block in the intake assembly of the vapor deposition apparatus of the present invention;

Figure 8 is a perspective view of a first-stage uniformity disk in a homogenizing assembly of the vapor deposition apparatus of the present invention;

Figure 9 is a perspective view of a secondary air distribution plate in a homogenizing assembly of the vapor deposition apparatus of the present invention;

10 is a schematic flow chart showing a superposition process of a single coating method of the vapor deposition apparatus of the present invention;

Figure 11 is a schematic view showing the result of superposition of a single coating method of the vapor deposition apparatus of the present invention;

12 is a schematic flow chart showing a superposition process of performing two coating methods of the vapor deposition apparatus of the present invention;

Figure 13 is a schematic view showing the result of superposition of two coating methods of the vapor deposition apparatus of the present invention;

Figure 14 is a flow chart showing a superposition process of three vapor deposition apparatuses of the vapor deposition apparatus of the present invention;

Fig. 15 is a view showing the result of superposition of three deposition methods of the vapor deposition apparatus of the present invention.

Reference mark:

10 ~ housing; 11 ~ cavity; 20 ~ carrier table; 30 ~ cover assembly; 31 ~ ring main cover; 32 ~ cover body; 321 ~ closed cooling channel; 322 ~ axial through hole; 33 ~ insulation Ring; 331 ~ annular body; 332 ~ annular flange; 34 ~ insulating mat; 40 ~ uniform gas assembly; 41 ~ one level uniform disk; 411 ~ first recessed area; 412 ~ first vent; 42 ~ two Uniform disc; 421 ~ second recessed area; 422 ~ secondary vent; 43 ~ second mounting hole; 50 ~ air intake assembly; 51 ~ cleaning gas transmission tube; 52 ~ pulse gas transmission tube; 53 ~ Air seat; 54～support seat; 55～ split air seat; 551～cleaning air passage; 552～third mounting hole; 553～ boss; 56～dispersion chamber; 57～transition seat; 571～first mounting hole ; 572 ~ cleaning pores; 60 ~ lifting adjustment mechanism; 61 ~ moving rod; 321-1 ~ coolant inlet; 321-2 ~ coolant outlet; 100 ~ wafer.

Detailed ways

The technical solutions in the embodiments of the present invention are clearly and completely described in the following with reference to the accompanying drawings in the embodiments of the present invention. The examples are only intended to illustrate the invention and are not intended to limit the invention. The described embodiments are only a part of the embodiments of the invention, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments of the present invention without creative efforts are within the scope of the present invention.

In the description of the present invention, it is to be noted that the orientation or positional relationship of the terms "upper", "lower", "horizontal", "vertical" and the like is based on the orientation or positional relationship shown in the drawings, only The present invention and the simplification of the description are not to be construed as limiting or limiting the invention.

In addition, in the description of the present invention, it should be noted that the terms "connected" and "connected" are to be understood broadly, and may be, for example, a fixed connection or a detachable connection, unless otherwise explicitly stated and defined. Or integrally connected; may be mechanical connection or electrical connection; may be directly connected, or may be indirectly connected through an intermediate medium, and may be internal communication between the two elements. The specific meaning of the above terms in the present invention can be understood in a specific case by those skilled in the art.

BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing a vapor deposition apparatus of the present invention. As shown in FIG. 1, the vapor deposition apparatus of the present invention comprises: a casing 10 provided with an upwardly open cavity 11; a stage 20 provided inside the cavity 11; a cover assembly 30, which is concave The cavity 11 is capped, and the capping assembly 30 forms a vacuum chamber with the cavity 11; a homogenizing assembly 40 is disposed inside the vacuum chamber and above the stage 20, and derivates gas toward the stage 20. And an air inlet assembly 50, which extends through the cover assembly 30, and includes a cleaning gas path and a pulse gas path. The cleaning gas path communicates with the gas equalization assembly 40, and the pulse gas path directly communicates with the cavity 11. Wherein, the wafer 100 is disposed at the center of the upper surface of the stage 20, and finally the reaction gas is blown to the upper surface of the wafer 100 through the cleaning gas path, the homogenizing assembly 40, and/or the pulse gas path.

In the vapor deposition apparatus of the present invention, the outer shape of the casing 10 may be a rectangular parallelepiped or a cylindrical shape, a central cylindrical hollow region, the stage 20 is located at the inner center of the vacuum chamber, and the cap assembly 30 is located at the device housing 10. Directly above, the outer dimension is larger than the inner dimension of the cavity 11, and there is a sealing groove between the two, and a sealing ring is placed inside to ensure the vacuum inside the reaction chamber to form a vacuum chamber.

The vapor deposition apparatus of the present invention combines a plasma enhanced chemical vapor deposition system, an atomic layer deposition system, and a plasma enhanced atomic layer deposition system, and the apparatus has a uniform gas flow covering the inside of the reaction chamber during the process, and There is a pulsed gas flow, the uniform gas flow is the type of reaction gas required for the plasma enhanced vapor deposition reaction, and the pulsed gas flow is the type of reaction gas required for the atomic layer deposition reaction. The two gas inlet devices can be independent of each other. The work can also be cross-processed in the process. When used independently of each other, plasma-enhanced chemical vapor deposition or atomic layer deposition can be performed separately. When used in combination, the combined reaction of the two systems can be completed.

The vapor deposition apparatus of the present invention can make the reaction gas streams of different growth processes not interfere with each other, and at the same time share some of the same components, combined in a single reaction chamber, and can be easily controlled accurately. The design is compatible with plasma enhanced chemical vapor deposition systems, atomic layer deposition systems, and plasma enhanced atomic layer deposition systems. The three systems can be performed without interference, and can also be cross-coated for coating reactions, such as plasma enhancement first. The chemical vapor deposition method is used to coat the base layer, and then the second layer of the film is deposited by atomic layer deposition, followed by plasma enhanced chemical vapor deposition to coat the film, etc., and the corresponding operation is performed according to the actual process results.

The vapor deposition apparatus of the present invention may further include a lift adjustment mechanism 60 disposed at the bottom of the cavity 11, the lift adjustment mechanism 60 including a movement rod 61 having one end connected to the stage 20 and the other end of the movement rod 61 Extending out of the cavity 11. By adjusting the lifting and lowering mechanism 60, the moving rod 61 is moved together, so that the distance between the wafer 100 and the uniformity assembly 40 can be adjusted, and the distance between the two can be adjusted according to different process requirements.

2 is a perspective view of a capping assembly of a vapor deposition apparatus of the present invention, and FIG. 3 is a cross-sectional view of a capping assembly of the vapor deposition apparatus of the present invention. As shown in FIGS. 1 to 3, the cap assembly 30 includes an annular main cover 31, an insulating ring 33, and a cap main body 32. The annular main cap 31 is disposed at the top end of the housing 10 and aligned with the cavity 11, and the cap is closed. The main body 32 covers the cavity 11, the outer edge of the cover main body 32 is disposed on the annular main cover 31, the insulating ring 33 is disposed between the cover main body 32 and the annular main cover 31, and the uniform assembly 40 is disposed on the cover On the bottom surface of the body 32.

The material of the cover main body 32 is generally aluminum or stainless steel, which is placed on the annular main cover 31, and the material of the annular main cover 31 is also aluminum or stainless steel, so as to prevent direct contact between the two, the short circuit occurs. The cover body 32 is separated from the annular main cover 31 by using an insulating material such as ceramic or polytetrafluoroethylene to isolate the contact of the two metal parts. Preferably, an insulating pad 34 is further disposed between the cap body 32 and the annular main cover 31. The insulating pad 34 is annular and located outside the insulating ring 33. The material may be an insulating material such as ceramic or polytetrafluoroethylene.

The insulating ring 33 has a hollow annular shape having an L-shaped cross section, that is, the insulating ring 33 includes an annular body 331 extending in the axial direction and an annular flange 332 extending radially outward, and the annular flange 332 is disposed on the annular main cover 31. On the top surface, the annular body 331 is fitted to the inner side wall of the annular main cover 31, and the outer edge of the cover main body 32 is disposed on the annular flange 332 and fixed to the annular main cover 31 by fasteners. Isolation of the contact of the two metal parts from the top and the side walls. The annular flange 332 is in contact with the cover main body 32 and the annular main cover 31, respectively, and has a sealing groove between the contact faces, and a sealing ring is placed in the middle, and the edge is pressed by a bolt uniformly disposed in the bolt hole, thereby ensuring The degree of vacuum in the reaction chamber.

The cover main body 32 includes an enclosed cooling groove 321 and an axial through hole 322 through which the intake assembly 50 is passed, the closed cooling groove 321 is formed on the cover main body 32, and the closed cooling groove 321 includes a coolant inlet 321-1 and cooling. Liquid outlet 321-2. The cover body 32 is a welded piece. The water-cooling ring is annular, and two holes are opened therein, which are a coolant inlet 321-1 and a coolant outlet 321-2, respectively. Two cold water nozzles are welded at the position, and then the whole body is welded to the cover main body 32. The cover main body 32 has a closed cooling groove 321 on the surface opposite to the water cooling ring, and the coolant passes through one of the cold water nozzles to enter the closed cooling. The groove 321 flows out from the other cold water nozzle after one round, thereby applying a cooling effect to the entire cover main body 32.

4 is a perspective view of an intake assembly of a vapor deposition apparatus of the present invention, FIG. 5 is a cross-sectional view of the intake assembly of the vapor deposition apparatus of the present invention in the x direction, and FIG. 6 is an intake assembly of the vapor deposition apparatus of the present invention. A cross-sectional view in the y direction, and Fig. 7 is a perspective view of a split air block in the intake assembly of the vapor deposition apparatus of the present invention. As shown in FIGS. 4-7, in the vapor deposition apparatus of the present invention, the intake assembly 50 includes a purge gas passage transfer pipe 51, a pulse gas passage transfer pipe 52, an intake seat 53, a support base 54, and a split air seat 55, The support base 54 is disposed on the cover main body 32 and aligned with the axial through hole 322. The air inlet seat 53 is disposed at the top end of the support base 54, and the split air seat 55 is disposed in the support base 54 to partition the bottom end of the air seat 55. Through the axial through hole 322 and communicating with the gas equalizing assembly 40 disposed under the split air seat 55, the top end of the split air seat 55 is lower than the top end of the support base 54 to the top end of the split air seat 55 and the support base 54. A dispersion chamber 56 is formed between the top ends, and the pulse gas passage transmission tube 52 sequentially penetrates the air inlet seat 53, the dispersion chamber 56, the split air seat 55, and the gas equalization assembly 40 and extends into the cavity 11, and cleans the gas passage transmission tube. 51 only extends through the intake seat 53, and the split air seat 55 is provided with a plurality of cleaning air passages 551 that are evenly arranged. The cleaning gas path transfer pipe 51 and the pulse gas path transfer pipe 52 are externally connected to the reaction gas from the gas cabinet. The gas for cleaning the gas passage transmission pipe 51 is the same, and is a cleaning gas that needs to be filled with the reaction chamber. The pulse gas passage transmission tube 52 has the same gas form and is a precursor pulse gas flow. The cleaning gas passage transmission pipe 51 and the pulse gas passage transmission pipe 52 are fixed in the through hole inside the intake seat 53, and have a seal groove on the outer side of the outlet of each pipe on the back side of the intake seat 53, and a seal ring is placed inside, and the seal ring is used. The bolts fasten the intake seat 53 to the entire welded portion of the purge gas passage transfer pipe 51 and the pulse gas passage transfer pipe 52, and the support base 54 to achieve sealing. The split air seat 55 is a cylindrical structure with a boss 553 at the end, and the boss 553 serves as a support. The cylindrical structure has an annular distributed cleaning air passage 551 extending from the top to the bottom, and the reaction gas in the dispersion chamber 56 The cleaning gas passage 551 enters into the gas equalization assembly 40 while having two relatively large third mounting holes 552 corresponding to the pulse gas passage transfer tubes 52 for mounting the pulse gas passage transfer tubes 52.

As shown in FIG. 5 and FIG. 6, the intake assembly 50 further includes a transition seat 57 disposed between the intake seat 53 and the support base 54, and the transition seat 57 includes a first mounting hole through which the pulse gas passage transmission tube 52 passes. 571 and the cleaning air hole 572, the upper portion of the cleaning air hole 572 is butted against the cleaning gas path conveying pipe 51, and the lower portion of the cleaning air hole 572 is inclined toward the center of the transition seat 57, and communicates to the dispersion chamber 56. The transition seat 57 has a first mounting hole 571 and a cleaning air hole 572, preferably a total of four. The cleaning air hole 572 corresponding to the cleaning gas path conveying pipe 51 is a curved through hole which is inclined vertically to the center first, and the cleaning gas passes through the through hole to enter the dispersion chamber 56, that is, the upper portion of the divided air seat 55. The hole corresponding to the first mounting hole 571 is a stepped vertical through hole, and the pulse gas path conveying pipe 52 is mounted on both holes. The support seat 54 has a hollow flange shape, the upper surface is matched with the air inlet seat 53, the sealing ring is disposed in the middle to seal, and the bolt is fastened; the lower surface is matched with the cover body 32, and the sealing ring is disposed in the middle to seal and fasten the bolt.

The uniform gas assembly 40 includes a primary air level disc 41 and a secondary air level disc 42 mounted on the bottom of the cover main body 32. The first level air level disc 41 is provided with a first recessed area 411 which is open upward, and a secondary air level disc 42 is provided with a second recessed area 421 which is open upward, and the secondary leveling disk 42 is disposed at the bottom of the primary leveling plate 41 and is disposed outside the first level of the leveling plate 41. The primary leveling plate 41 and the secondary leveling plate 42 are flanges, and the primary leveling plate 41 and the secondary leveling plate 42 are fastened to the bottom of the cover 32 by fasteners. The first leveling plate 41 and the second leveling plate 42 are respectively provided with a second mounting hole 43 through which the pulse gas path conveying pipe 52 passes and is aligned with the first mounting hole 571, and the first recessed area 411 is evenly disposed. A plurality of primary vents 412 are disposed, and the second recessed regions 421 are further provided with a plurality of secondary vents 422 arranged uniformly. The aperture of the secondary vents 422 is smaller than the aperture of the primary vents 412.

The reaction gas entering the first recessed region 411 enters the second recessed region 421 through the first-stage venting hole 412 on the primary air-conditioning tray 41, so that the first-stage uniform flow of the reaction gas is achieved, and then passes through the secondary air-conditioning tray 42. The secondary vent 422 is introduced into the vacuum chamber to achieve a secondary flow, that is, an air intake method that covers a uniform air flow inside the reaction chamber. The second mounting hole 43 on the primary air level disc 41 and the second level air level disc 42 corresponds to the pulse gas path transfer tube 52, and the pulse gas path transfer tube 52 extends into the first level air level disc 41 and the second level air level disc 42. Directly to the bottom surface of the secondary air-conditioning tray 42, two bundles of airflow enter the vacuum chamber, that is, a pulsed airflow intake mode.

In addition, the present invention also provides a vapor deposition method for coating a semiconductor wafer in a vacuum chamber, comprising: a vapor deposition step, alternately performing a plasma enhanced chemical vapor deposition process, an atomic layer by using the above vapor deposition apparatus of the present invention At least one of a deposition process or a plasma enhanced atomic layer deposition process performs vapor deposition on a wafer; and a judging step of determining whether the number of coating times in the vapor deposition step has reached a predetermined number of cycles, and determining that it is true Next, the vapor deposition process is stopped; if the determination is negative, the vapor deposition step described above is repeated.

Specifically, in the plasma enhanced chemical vapor deposition process, the pulse gas path transfer pipe gas path 52 is closed, and a reaction gas is introduced into the purge gas path transfer pipe 51, and the reaction gas sequentially passes through the dispersion chamber 56 and the gas equalization assembly 40. And deposited on the upper surface of the wafer 100 disposed on the stage 20, and a plating film is formed on the upper surface of the wafer 100.

In the atomic layer deposition process, the cleaning gas path transfer pipe 51 is closed, and the reaction gas is introduced into the pulse gas path transfer pipe gas path 52. The reaction gas is directly deposited on the upper surface of the wafer 100 disposed on the stage 20, in the wafer. A coating film is formed on the upper surface of 100.

In the plasma enhanced atomic layer deposition process, first, the pulse gas passage 52 is introduced into the precursor pulse gas, and enters the vacuum chamber to be chemically adsorbed on the surface of the wafer 100; and then is introduced through the cleaning gas passage transmission pipe 51. The cleaning gas enters the cavity through the homogenizing component 40, cleans the reaction chamber, and eliminates by-products and excess precursors; then passes through the pulsed gas path to the plasma path 52 to react with the adsorbed precursor to form a thin film. Finally, the cleaning gas is supplied to the cleaning gas passage through the cleaning gas passage, and the cleaning chamber is introduced into the vacuum chamber to form a plating film on the upper surface of the wafer 100.

The vapor deposition method can accurately realize three different coating methods, and the three can be mutually independent and alternately carried out, and the operation is easy, the control is precise, and the structure is simple.

Figure 10 is a flow chart showing the superposition of a single type of coating process. The same type of coating process is performed N times to form a film type 901 on the surface of the wafer 100. First, in step S11, the number of plating cycles is initialized to 1. Next, in step S12, a first layer of film 901-A is deposited on the surface of the substrate. Thereafter, in step S13, it is determined whether or not the number of coating cycles has reached a predetermined number of times. If the determination is "NO", the process returns to step S11 to increase the number of coating cycles by one. Next, proceeding to step S22, a second film 901-B is deposited on the substrate. By this cycle, the second film 901-C... is deposited on the substrate until it is judged as "YES" in the step S13. The coating process used in step S12 may be any one of plasma enhanced chemical vapor deposition, atomic layer deposition, or plasma enhanced atomic layer deposition. Fig. 11 is a view showing the result of superimposing a process of performing a single coating method of the vapor deposition apparatus of the present invention.

In some cases, two of the coating processes, such as plasma enhanced chemical vapor deposition, atomic layer deposition, or plasma enhanced atomic layer deposition, are alternated. Fig. 12 is a flow chart showing the alternate operation of plasma enhanced chemical vapor deposition and atomic layer deposition. As shown in FIG. 12, first, in step S21, the number of plating cycles is initialized to 1. Next, in step S22, the first layer film 701-A is plated on the surface of the substrate by plasma enhanced chemical vapor deposition. In step S23, a second film 701-B is deposited on the first layer film 701-A by atomic layer deposition. Thereafter, in step S24, it is determined whether or not the number of coating cycles has reached a predetermined number of times. If the determination is "NO", the process returns to step S21 to increase the number of coating cycles by one. Next, proceeding to step S22, the third layer film 701-A is plated on the surface of the second layer film 701-B by plasma enhanced chemical vapor deposition. In step S23, a fourth film 701-B is deposited on the third layer film 701-A by atomic layer deposition. This loop is continued until it is judged as YES in step S24. The coating process used in the step S22 and the step S23 may be any two of plasma enhanced chemical vapor deposition, atomic layer deposition or plasma enhanced atomic layer deposition. In addition, the two processes used in each coating process cycle may be different from the two processes used in the last coating process cycle or the next coating process cycle. That is to say, the process used in each coating process cycle can be a combination of any two of plasma enhanced chemical vapor deposition, atomic layer deposition and plasma enhanced atomic layer deposition, and the execution order can also be adjusted at will. Fig. 13 is a view showing the result of superimposing the process of performing the two coating methods of the vapor deposition apparatus of the present invention.

In some more specific cases, three of the coating processes in plasma enhanced chemical vapor deposition, atomic layer deposition, or plasma enhanced atomic layer deposition are required to alternate. Fig. 14 is a flow chart showing the alternate operation of plasma enhanced chemical vapor deposition and atomic layer deposition. As shown in FIG. 14, first, in step S31, the number of plating cycles is initialized to 1. Next, in step S32, the first layer film 801-A is plated on the surface of the substrate by plasma enhanced chemical vapor deposition. In step S33, a second film 801-B is deposited on the first film 801-A by atomic layer deposition. Next, in step S34, a third film 801-C is deposited on the second film 801-B by plasma enhanced atomic layer deposition. Thereafter, in step S35, it is determined whether or not the number of coating cycles has reached a predetermined number of times. If the determination is "NO", the process returns to step S31, and the number of coating cycles is increased by one. Next, in step S32, the fourth layer film 801-A is plated on the surface of the third layer film 801-C by plasma enhanced chemical vapor deposition. In step S33, a fifth film 801-B is deposited on the fourth film 801-A by atomic layer deposition. Next, in step S33, a sixth film 801-C is deposited on the fifth film 801-B by means of plasma enhanced atomic layer deposition. This loop is continued until it is judged as YES in step S35. The coating process used in steps S32 to S34 is three types of plasma enhanced chemical vapor deposition, atomic layer deposition or plasma enhanced atomic layer deposition. In addition, in each coating process cycle, the order of the three processes employed in steps S32 to S34 may be different from the order of the three processes employed in the last coating process cycle or the next coating process cycle. Fig. 15 is a view showing the result of superimposing a process of performing the two coating methods of the vapor deposition apparatus of the present invention.

In summary, the vapor deposition apparatus of the present invention can make the reaction gas streams of different growth processes not interfere with each other, and at the same time integrate some common components into a single reaction chamber, which is easy to accurately control. The design is compatible with plasma enhanced chemical vapor deposition systems, atomic layer deposition systems, and plasma enhanced atomic layer deposition systems. The three systems can be performed without interference, and can also be cross-coated for coating reactions, such as plasma enhancement first. The chemical vapor deposition method is used to coat the base layer, and then the second layer of the film is deposited by atomic layer deposition, followed by plasma enhanced chemical vapor deposition to coat the film, etc., and the corresponding operation is performed according to the actual process results.

The above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of changes or substitutions within the technical scope of the present invention. All should be covered by the scope of the present invention.

Claims

A vapor deposition apparatus characterized in that

include:

a housing (10) provided with an upwardly open cavity (11);

a stage (20) disposed inside the cavity (11);

a capping assembly (30) that covers the cavity (11), the capping assembly (30) forming a vacuum chamber with the cavity (11);

a homogenizing assembly (40) disposed inside the vacuum chamber and above the stage (20) and directing gas toward the stage (20);

An air intake assembly (50) penetrating the cover assembly (30) and including a cleaning gas path and a pulse gas path, the cleaning gas path communicating with the gas equalizing component (40), the pulse gas path being directly Communicating with the cavity (11).
The vapor deposition apparatus according to claim 1, wherein

The cover assembly (30) includes an annular main cover (31), an insulating ring (33) and a cover main body (32), the annular main cover (31) being disposed at a top end of the housing (10), and Aligned with the cavity (11), the cap body (32) covers the cavity (11), and the outer edge of the cap body (32) is disposed on the ring main cover ( 31) The insulating ring (33) is disposed between the cover body (32) and the annular main cover (31), and the uniform component (40) is disposed at the cover body (32) ) on the underside.
The vapor deposition apparatus according to claim 2, wherein

The insulating ring (33) includes an annular body (331) extending in the axial direction and an annular flange (332) extending radially outward, the annular flange (332) being disposed on the annular main cover (31) The annular body (331) is attached to the inner side wall of the annular main cover (31), and the outer edge of the cover body (32) is disposed at the annular flange (332) Upper and fixed to the annular main cover (31) by fasteners.
The vapor deposition apparatus according to claim 3, wherein

The cover body (32) includes a closed cooling groove (321) and an axial through hole (322) through which the intake assembly (50) passes, and the closed cooling groove (321) is formed in the cover The main body (32), and the closed cooling tank (321) includes a coolant inlet (321-1) and a coolant outlet (321-2).
The vapor deposition apparatus according to claim 4, wherein

The air intake assembly (50) includes a cleaning air passage transmission pipe (51), a pulse gas passage transmission pipe (52), an air intake seat (53), a support base (54), and a split air seat (55), the support a seat (54) is disposed on the cover body (32) and aligned with the axial through hole (322), and the air inlet seat (53) is disposed at a top end of the support base (54) The split air seat (55) is disposed in the support base (54), the bottom end of the split air seat (55) penetrates the axial through hole (322), and is disposed in the split air seat ( 55) The gasification assembly (40) underneath is communicated, and the top end of the split gas seat (55) is lower than the top end of the support seat (54) to be at the top end of the split gas seat (55) A dispersion chamber (56) is formed between the top ends of the support seats (54), and the pulse gas passage transmission tube (52) sequentially penetrates the air inlet seat (53), the dispersion chamber (56), and the a split air block (55) and the uniform gas assembly (40) extending into the cavity (11), the cleaning gas path transfer pipe (51) only penetrating the air inlet seat (53) The split air block (55) is provided with a plurality of cleaning air passages (551) arranged uniformly.
The vapor deposition apparatus according to claim 5, wherein

The air intake assembly (50) further includes a transition seat (57) disposed between the air inlet seat (53) and the support base (54), the transition seat (57) including the pulse gas a first mounting hole (571) through which the road conveying pipe (52) passes, and a cleaning air hole (572), an upper portion of the cleaning air hole (572) is abutted with the cleaning gas path conveying pipe (51), the cleaning air hole The lower portion of (572) is inclined toward the center of the transition seat (57) and communicates to the dispersion chamber (56).
The vapor deposition apparatus according to claim 6, wherein

The homogenizing assembly (40) includes a primary airing plate (41) and a secondary air conditioning disk (42) mounted on a bottom of the cover body (32), the first level air plate (41) a first recessed area (411) having an upward opening, the second leveling plate (42) is provided with a second recessed area (421) that is open upward, and the secondary leveling disk (42) is disposed at The bottom of the first level airing plate (41) is disposed on the outer side of the first level airing plate (41).
The vapor deposition apparatus according to claim 7, wherein

The first level air concentrating disk (41) and the second level air concentrating disk (42) are respectively provided with a second for the pulse gas path conveying pipe (52) to pass through and aligned with the first mounting hole (571). a mounting hole (43), wherein the first recessed area (411) is further provided with a plurality of first-level vent holes (412) uniformly arranged, and the second recessed area (421) is further provided with a plurality of evenly arranged two A vent (422) having a smaller aperture than the primary vent (412).
A vapor deposition method for coating a semiconductor wafer in a vacuum chamber, characterized in that

include:

a vapor deposition step of alternately performing the plasma enhanced chemical vapor deposition process, the atomic layer deposition process, or the plasma enhanced atomic layer deposition using the vapor deposition apparatus of any one of claims 1-8 At least one of the processes is vapor deposited on the wafer;

The judging step determines whether the number of plating times in the vapor deposition step has reached a predetermined number of cycles, and if the determination is YES, stops the vapor deposition process; and if the determination is negative, repeats the vapor deposition step.
The vapor deposition method according to claim 9, wherein

In the plasma enhanced chemical vapor deposition process, the pulse gas path transmission pipe gas path (52) is closed, and a reaction gas is introduced into the cleaning gas path transmission pipe (51), and the reaction gas passes through the a dispersion chamber (56) and the uniform gas assembly (40), and deposited on an upper surface of the wafer (100) disposed on the wafer stage (20), at the wafer (100) a coating is formed on the upper surface,

In the atomic layer deposition process, the cleaning gas path transfer pipe (51) is closed, and a reaction gas is introduced into the pulse gas path transfer pipe gas path (52), and the reaction gas is directly deposited on the load. On the upper surface of the wafer (100) of the wafer stage (20), a plating film is formed on the upper surface of the wafer (100).

In the plasma enhanced atomic layer deposition process, first, the precursor gas pulse gas is introduced into the vacuum gas passage (52) through the pulse gas path, and enters the vacuum chamber to be chemically adsorbed on the surface of the wafer (100), and then Passing the cleaning gas through the cleaning gas passage transmission pipe (51), entering the cavity through the uniform gas assembly (40), cleaning the reaction chamber, eliminating by-products and excess precursor, and then transmitting through the pulse gas path The tube gas path (52) is passed into the plasma, reacts with the adsorbed precursor to form a thin film, and finally passes through the cleaning gas passage transfer tube (51) to pass the cleaning gas, and enters the vacuum chamber for cleaning. A plating film is formed on the upper surface of (100).