CN102534570B - Method for preparing microcrystalline silicon film by plasma-enhanced chemical vapor deposition - Google Patents
Method for preparing microcrystalline silicon film by plasma-enhanced chemical vapor deposition Download PDFInfo
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- CN102534570B CN102534570B CN201210001348.3A CN201210001348A CN102534570B CN 102534570 B CN102534570 B CN 102534570B CN 201210001348 A CN201210001348 A CN 201210001348A CN 102534570 B CN102534570 B CN 102534570B
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Abstract
The invention relates to a method for preparing a microcrystalline silicon film by plasma-enhanced chemical vapor deposition, belonging to the technical field of plasma application. The invention relates to a method for preparing the microcrystalline silicon film by the chemical vapor deposition technology which adopts a hollow cathode to enhance plasma, in particular to the technology which utilizes a micro-hollow cathode array electrode structure to increase the density of the plasma so as to further improve the deposition rate of the film. After the micro-hollow cathode array electrode structure is adopted, the discharge efficiency is improved, the monomer pyrolysis rate is further improved, and the density of active groups in the space can be increased, so that the deposition rate of the film is greatly improved, and the deposition temperature is reduced.
Description
Technical field:
The present invention relates to a kind of hollow cathode that adopts and strengthen the method that plasma activated chemical vapour deposition technique is prepared microcrystalline silicon film, especially utilize micro-hollow cathode array electrode structure can increase the sedimentation rate of plasma density and then raising film.
Background technology:
Solar cell utilizes photovoltaic effect directly to convert solar energy into electrical energy, and is one of optimal novel energy.Silica-base film, as a kind of high-level efficiency, solar cell material cheaply, becomes the study hotspot in current this field.People have found that in preparing amorphous silicon membrane process microcrystal silicon battery has better properties and lower cost.When preparing amorphous silicon membrane, change film growth condition, can make part crystallization of silicon in film become little crystal grain.This film that contains silicon microcrystal grain, has material impact to the efficiency of solar cell and life-span.
Microcrystal silicon has the optical band gap close with silicon single crystal (1.12eV), and spectral response range comprises ruddiness and region of ultra-red, and efficiency of conversion is higher, and almost there is no light-induced degradation effect.And the optical band gap of non-crystalline silicon is 1.7eV, greater band gap, can not utilize the ir radiation of ruddiness and long-wave band etc., and efficiency of conversion is low, and has light-induced degradation effect, and its efficiency of conversion can further reduce along with the time, made its development be subject to certain limitation.Light-induced degradation that it is generally acknowledged non-crystalline silicon is relevant with its inner Si-Si bond disorder network structure, dangling bonds and other subsurface defects, therefore, eliminates the unordered network structure that this metastable state just must be improved film, and micritization is exactly an important approach.Microcrystal silicon can make by the preparation method identical with non-crystalline silicon, have low temperature process, consumptive material few, be convenient to big area and the advantage such as prepare, can deposit in cheap flexible substrate, be very promising solar cell material.
The current method of preparing microcrystalline silicon film mainly contains: solid phase crystallization method (SPC, Solid Phase Crystallization), liquid phase epitaxial method (LPE, Liquid Phase Epitaxy), chemical vapour deposition (CVD, Chemical Vapor Deposition) etc.
One, solid phase crystallization method (SPC).Generally elder generation's deposited amorphous silicon thin film at lower temperature, then thermal annealing makes amorphous silicon membrane be activated and recombinate in the Siliciumatom under solid-state, and then changes into microcrystalline silicon film.Solid phase crystallization method comprises High Temperature Furnaces Heating Apparatus Annealing Crystallization method, rapid thermal annealing crystallization method (RTA, Rapid Thermal Annealing), excimer laser crystallization method (ELA, Excimer Laser Annealing) and metal-induced crystallization method (MIC, Metal Induced Crystallization) etc.
High Temperature Furnaces Heating Apparatus Annealing Crystallization method is under vacuum or high pure nitrogen protection, amorphous silicon membrane to be put into stove to anneal, and makes it by non-crystalline state, change polycrystalline state into.If adopt glass substrate or plastic, require annealing temperature lower, this can make the time of annealing longer, and the speed heating up has a significant impact grain size.
Rapid thermal annealing crystallization method is to use halogen tungsten lamp as thermal source, utilizes the heat effect of light and quantum effect to anneal to material, can increase bulk diffusion and surface diffusion coefficient, greatly shortens annealing time, reduces defect concentration simultaneously, can obtain good crystallization effect.But this method annealing temperature is greater than 700 ℃, still belongs to high temperature process.
Excimer laser crystallization method, utilize the high-energy of moment laser pulse generation to incide amorphous silicon membrane surface, only in the thick degree of depth of film top layer 100nm, produce heat effect, make a-Si film reach 1000 ℃ of left and right in moment, thereby realize a-Si to the transformation of p-Si, do not have too much thermal energy conduction to substrate.Choose reasonable swashs light wavelength and power, uses LASER HEATING just can make a-Si film reach the temperature of fusing and the temperature of assurance substrate lower than 450 ℃.The standby microcrystalline silicon film crystal grain of excimer laser crystallization legal system is large, spatial selectivity good, and doping efficiency is high, intracrystalline imperfection is few, electrology characteristic is good, mobility advantages of higher.But, this method is because grain-size is responsive to laser power, and large-area uniformity is poor, poor repeatability, and equipment cost is high, safeguards complexity, makes its application be subject to certain limitation.
Metal-induced crystallization method, utilizes the atoms metal existing in non-crystalline material can reduce the required energy of material crystallization, and crystallisation process can be carried out at lower temperature.Before or after deposition a-Si film, evaporation last layer metal (Al, Ni, Pd) film, then makes it be converted into microcrystalline silicon film with heat-treating methods.Due to the existence of atoms metal, make Si-Si covalent linkage change metallic bond Si-Al into, greatly reduce excitation energy, thereby reduced the crystallization temperature of non-crystalline silicon.But the atoms metal containing in film can become impurity, the one-piece construction of solar cell and performance are impacted.
Two, liquid phase epitaxial method (LPE).At a certain temperature, silicon has certain solubleness in a lot of metals.The temperature that changes saturated solution, silicon will be separated out in solution, thereby may form the epitaxy of silicon, likely obtain the film of microcrystal silicon structure.Microcrystalline silicon film prepared by liquid phase epitaxial method is grown under intimate thermally equilibrated condition, thereby has very low defect concentration and crystal boundary composite reactive, and epitaxial growth temperature is lower, and growth velocity is very fast.In addition, by controlling growth conditions, utilize liquid phase epitaxial method can directly prepare the microcrystal silicon with suede structure.The method is difficult to avoid sneaking into of liquid phase impurity atoms.
Three, chemical vapor deposition (CVD).Chemical vapour deposition is by certain incentive mechanism, reactant gas molecules is excited and resolves into various active groups or ion, these are excited or the ion that decomposites or group are diffused near substrate and react with it, finally on substrate, deposit the uniform thin-film material of one deck.Chemical vapour deposition technique mainly comprises subatmospheric chemical Vapor deposition process (LPCVD, Low Pressure CVD), hot-wire chemical sinks vapour deposition process (HWCVD, Hotwire CVD) and plasma enhanced chemical vapor deposition method (PECVD, Plasma enhanced CVD) etc.
Microcrystalline silicon film quality prepared by subatmospheric chemical Vapor deposition process is good, and crystal grain has preferred orientation, but its grain-size is less, and carrier mobility is large not, is also usually accompanied by the increase of surfaceness, and the electrical stability of device is had a negative impact.Hot filament CVD, deposit film speed, but in preparation process, easily tramp m. atom, pollutes film.
Plasma enhanced chemical vapor deposition method, is to make reactant gases resolve into atom, ion and other active groups with plasma body glow discharge, at substrate surface reactive deposition, finally generates microcrystalline silicon film or amorphous silicon membrane.By optimizing preparation parameter, can make the good microcrystalline silicon film of quality, and temperature is very low, be particularly suitable in the flexible substrate such as plastic film, preparing solar cell, be subject to people's extensive concern.
But common plasma enhanced chemical vapor deposition method, the sedimentation rate of preparing microcrystalline silicon film is slower, and crystal grain is less.For this reason, we are in conjunction with the advantage of hollow cathode discharge, have developed the method that plasma enhanced chemical vapor deposition unit that hollow cathode combines with plate armature is prepared microcrystalline silicon film.Kind electrode structure can improve discharging efficiency, and then improves monomer cleavage rate, increases the active group concentration in space, greatly improves the sedimentation rate of film, and can reduce depositing temperature.
Summary of the invention:
For above-mentioned technical problem, the invention provides a kind of apparatus for atomic layer deposition with array hollow cathode structure,
A kind of apparatus for atomic layer deposition, it is characterized in that: this device comprises gas distributing system 1, vacuum chamber 2, array hollow cathode top electrode 3, flat ground connection lower electrode 4, pumped vacuum systems 5, power-supply system 6, the through hole that described array hollow cathode top electrode 3 is 1-3mm with a plurality of equally distributed diameter ranges, the spacing in adjacent hole is 2-4mm, spacing between array hollow cathode top electrode 3 and flat ground connection lower electrode 4 is 5-20mm, and array hollow cathode top electrode 3 connects the steam line of gas distributing system 1.The terminal stud of described formula hollow cathode array electrode 3 is connected to high voltage electrode one end of described power-supply system 6, and keeping insulation with the vacuum chamber of described device, flat ground connection lower electrode, the ground terminal of described power-supply system 6 is connected on described vacuum chamber 2 and described flat ground connection lower electrode 4.
Described power-supply system 6 is that the very high frequency(VHF) power supply of 60-100MHz is, any in the high-frequency radio frequency power supply of 2-60MHz, the intermediate frequency power supply of 10-60KHz, the unipolarity of 10-60KHz or bipolar pulse direct supply.Described power-supply system adopts pulse control mode can control and regulate the dutycycle in discharge process.
Described flat ground connection lower electrode 4 is provided with heating unit.
The method steps of the above device of application is as follows:
The loop cycle mode that gas distributing system 1 replaces with pulse is to described array hollow cathode top electrode 3 air feed, from the gas of described gas distributing system 1, first by the through hole on described array hollow cathode top electrode 3, then enters vacuum chamber 2.Between described array hollow cathode electrode 3 and described flat ground connection lower electrode 4, apply voltage, ionization of gas is produced to plasma body and carry out thin film deposition, plasma discharge power 30～400W.
Described gas distributing system 1 comprises at least two-way gas piping, and each gas piping comprises check valve, operated pneumatic valve switch and mass flowmeter; Wherein operated pneumatic valve closes the period 0.01～10 second scope, and time precision is less than 0.01 second.
Described power-supply system 6 out-put supply dutycycles 5～90%.
The loop cycle mode that gas distributing system 1 replaces with pulse is to array hollow cathode top electrode 3 supply response monomer gas and argon gas.
The apparatus for atomic layer deposition with array hollow cathode structure the present invention relates to, described gas distributing system 1 can be controlled the serial or parallel connection of many gas circuits.
The apparatus for atomic layer deposition with array hollow cathode structure the present invention relates to, described gas distributing system 1 comprises at least two-way gas piping, air feed individually or simultaneously, described at least two-way gas piping, by mass-flow gas meter and accurate solenoid control, has a gas circuit at least for argon gas in described at least two-way gas piping.
The apparatus for atomic layer deposition with array hollow cathode structure the present invention relates to, described pumped vacuum systems 5, can make the base vacuum of described vacuum chamber reach 1 * 10
-4pa, according to the difference of processing condition, within air pressure during electric discharge can be controlled in the scope of 10-1000Pa.
The apparatus for atomic layer deposition with array hollow cathode structure the present invention relates to, the mode that described flat ground connection lower electrode 4 adopts downside to place, as substrate mounting table, described flat ground connection lower electrode 4 has heating function, and temperature is from adjustable continuously within the scope of 40～600 ℃.
The invention provides a kind of novel method of preparing microcrystalline silicon film, adopting micro-hollow cathode array discharge effect to increase on the basis of plasma density principle, utilize radio frequency or very high frequency(VHF) power supply excitation working gas to produce plasma body, the microcrystalline silicon film of growing on the base materials such as organic film, glass or silicon single crystal; The method specifically comprises the following steps:
A. substrate pre-treatment: use organic film, monocrystalline silicon piece or sheet glass as substrate; To HF acid ultrasonic cleaning for p-type monocrystalline silicon piece, to remove surperficial SiO
2layer, and then use successively dehydrated alcohol, deionized water to carry out ultrasonic cleaning, until silicon chip surface is clean, then with nitrogen, dry up; Sheet glass directly carries out ultrasonic cleaning with dehydrated alcohol, deionized water successively, until glass sheet surface is clean, then with nitrogen, dries up; While adopting organic film as substrate, adopt dehydrated alcohol wiping film surface;
B. vacuum obtains and base station heating: described substrate is placed on lower electrode, with molecular pump and mechanical pump, is evacuated to 1 * 10
-2pa-1 * 10
-4pa; Open base station heating simultaneously, control 40～600 ℃ of base station temperature ranges;
C. thin film deposition: after vacuum tightness and base station temperature reach described b step and require, open inlet system, alternately pass into silicon source gas and hydrogen, when air pressure meets thin film deposition requirement, power-on is discharged, and carries out plasma enhanced chemical vapor deposition microcrystalline silicon film.
D. shutdown: thin film deposition is complete, first stops electric discharge, then closes successively silicon source gas and hydrogen, and gas circuit and vacuum chamber are rinsed with argon gas or nitrogen, finally closes all power supplys and source of the gas.
The method of preparing microcrystalline silicon film the present invention relates to, wherein said silicon source gas adopts SiH
4, SiH
2cl
2, SiHCl
3or SiCl
4in any, or mix appropriate argon gas with enhanced discharge effect, improve the quality of deposit film.
The method of preparing microcrystalline silicon film the present invention relates to can produce the high plasma body of density ratio classic flat-plate formula ground connection lower electrode under radio frequency or the excitation of very high frequency(VHF) power supply.
Accompanying drawing explanation:
Fig. 1 is the apparatus for atomic layer deposition structural representation with array hollow cathode structure;
Fig. 2 is array hollow cathode structure front elevational schematic;
Fig. 3 is array hollow cathode structure schematic side view;
Fig. 4 is gas distributing system schematic diagram;
Fig. 5 is air pressure 220Pa, power 80W, the photo of plasma discharge under interelectrode distance 18mm condition;
Fig. 6 is Raman (Raman) spectrogram of prepared microcrystalline silicon film;
Fig. 7 is the atomic force microscope three-dimensional appearance figure on prepared microcrystalline silicon film surface.
Embodiment
The invention provides a kind of apparatus for atomic layer deposition with array hollow cathode structure.This covering device comprises gas distributing system 1, vacuum chamber 2, array hollow cathode top electrode 3, flat ground connection lower electrode 4, pumped vacuum systems 5, power-supply system 6.Utilize the hollow cathode discharge effect of array hollow cathode top electrode 3, can significantly improve ionisation of gas efficiency, improve air pressure and the plasma density of discharge gas, and then the reaction monomers activation efficiency in raising atomic layer deposition process, increase the active group concentration in space, greatly improve the sedimentation rate of film, and can reduce depositing temperature.Measuring result shows, this array hollow discharge can increase plasma density to 10
11～10
13/ cm
3, reduce energy of plasma below 1eV, 5～10 times of the sedimentation rates of raising film, depositing temperature is envrionment temperature to 600 ℃.And this device can obtain in 100mm diameter range, homogeneity is less than 5%.
Array hollow cathode top electrode 3, is the planar electrode with a lot of tiny through holes, and it forms condenser coupling discharge electrode together with flat ground connection lower electrode 4, and the spacing of two electrodes is adjustable, is the required electrical discharge zone of gas reaction between the two.Array hollow cathode top electrode 3 connects the steam line of gas distributing system 1, the tiny through hole of first arranging by array from the gas of gas distributing system, then enter vacuum chamber, can guarantee the air-flow distribution uniform of electrical discharge zone.Array hollow cathode top electrode 3 is connected to high voltage electrode one end of power-supply system 6, and insulate with vacuum chamber 2.
Gas distributing system 1, by the online air-flow of high-precision micro computer, control, can control the serial or parallel connection of many gas circuits, can pulse replace in loop cycle mode to array hollow cathode top electrode 3 air feed, air-flow first passes through the tiny through hole of array, then enters electrical discharge zone.Gas distributing system 1 comprises at least two-way gas piping, air feed individually or simultaneously, and gas piping is all controlled by mass-flow gas meter and accurate magnetic valve, and the control accuracy of magnetic valve opening and closing speed can reach 0.01 second.Wherein have at least the gas circuit can be for argon gas, argon gas can play substrate and purge, carries the effects such as reaction monomers, ionic discharge.
Power-supply system 6, can be the AC power that frequency is higher (the high-frequency radio frequency power supply of 2-60MHz, or the very high frequency(VHF) power supply of 60-100MHz, or the intermediate frequency power supply of 10-60KHz), also can be unipolarity or the bipolar pulse direct supply of 10-60KHz, preferentially select very high frequency(VHF) power supply.The high-pressure side of power supply is connected on the terminal stud of array hollow cathode top electrode 3, and keeps insulation preferably with miscellaneous part; The ground terminal of power supply is connected on vacuum chamber peace plate-connection ground lower electrode 4.By apply voltage between 3 and 4, ionization of gas can be produced to plasma body.Power-supply system adopts pulse control mode, can control and regulate the dutycycle in discharge process.Power-supply system and gas distributing system are controlled by the unified of micro computer, can collaborative work.
Pumped vacuum systems 5, can make the base vacuum of vacuum chamber reach 1 * 10
-2pa-1 * 10
-4pa or better, according to the difference of processing condition, within air pressure during electric discharge can be controlled in the scope of 10-1000Pa.
Flat ground connection lower electrode 4, the mode that generally adopts downside to place, can be used as substrate mounting table.Flat ground connection lower electrode 4 has heating function, and temperature range is continuous adjustable from 40～600 ℃.
According to content of the present invention, prepare a set of little experimental installation, top electrode is designed to the array hollow cathode structure (seeing accompanying drawing 2) of ladder hole, porous is uniformly distributed, diameter range is 1-3mm, the spacing in adjacent hole is 2-4mm, the planar electrode that is shaped as circular, hexagon, the through hole such as square in hole, selects stainless steel.Power-supply system is the radio-frequency power supply of frequency 27.12MHz, output rating 300W, with automatic adapter.Vacuum pump system, selects rotary-vane vaccum pump and turbo-molecular pump system, and is furnished with the valve that regulates pumping speed.
Under the condition of base vacuum 0.1Pa, electric discharge air pressure 220Pa, argon flow amount 220sccm, lower discharge power 80W, interelectrode distance 18mm, only use argon gas discharging.With langmuir probe, the electron density that records argon plasma can reach 115.2 * 10
10cm
-3, be better than the plasma electron density 28.4 * 10 of the plate electrode under the same terms
10cm
-3.Accompanying drawing 4 is shown in by electric discharge photo.
Take prepare silica-based too can film be example, operating process and the result of use of this device is described.
Take siliceous gas or liquid as silicon source presoma, take hydrogen as reducing gas; Under vacuum or rough vacuum condition, with radio frequency or the excitation of very high frequency(VHF) power supply, produce plasma body, realize pulsed plasma and strengthen chemical vapour deposition microcrystalline silicon film.Technical process is mainly divided into four steps: substrate pre-treatment, vacuum obtain and base station heating, thin film deposition, shutdown.
One. substrate pre-treatment: use organic film, monocrystalline silicon piece or sheet glass as substrate.To 20% HF acid ultrasonic cleaning 60 seconds for p-type monocrystalline silicon piece, to remove surperficial SiO
2layer, and then use successively dehydrated alcohol, deionized water to carry out ultrasonic cleaning, until silicon chip surface is clean, then with clean nitrogen, dry up; The substrates such as sheet glass directly carry out ultrasonic cleaning with dehydrated alcohol, deionized water, until glass sheet surface is clean, then with nitrogen, dry up.
Two. vacuum obtains and base station heating: substrate is placed on lower electrode, when vacuum tightness is less than 10Pa, opens molecular pump, simultaneously the power supply opening to chip bench heating.Vacuum chamber is evacuated to 1 * 10
-3pa, controls 100～600 ℃ of base station temperature ranges.
Three. thin film deposition: when vacuum tightness and base station temperature reach after requirement, open gas distributing system.First input argon gas 5～100sccm, 5～10 minutes, open plasma was carried out plasma surface cleaning to substrate, scavenging period 5～10 minutes.Close plasma discharge power supply; Continue to pass into argon gas 5～10 minutes, close argon gas input; Open silicon source gas, input 5～100sccm silicon source gas, 0.2～5 second time; Close silicon source gas; Input argon gas 5～100sccm, 1～5 second; Close argon gas; Open hydrogen gas, input 5～100sccm hydrogen gas, 0.2～5 second time, while open plasma power supply, plasma discharge power 30～400W; Close hydrogen gas, close plasma electrical source; Input argon gas 5～100sccm, 1～5 second; Close argon gas; This is one-period.Then input respectively silicon source gas, argon gas, hydrogen, argon gas etc. and repeat, realize and proportionally alternately pass into silicon source gas and hydrogen, carry out the deposition of plasma enhanced chemical vapor deposition microcrystalline silicon film.
Four. shutdown: thin film deposition is complete, then closes successively silicon source gas hydrogen, and gas circuit and vacuum chamber are rinsed 10～30 minutes with argon gas, finally closes argon gas, and molecular pump, mechanical pump and all power supplys.
Adopt the apparatus for atomic layer deposition of array hollow cathode structure of the present invention, in conjunction with hollow cathode plasma low temperature, efficient and accurate, the controlled advantage of ald, than classic flat-plate formula ground connection lower electrode arrangement, there is higher discharging efficiency and plasma density, can greatly improve the cleavage rate of reaction monomers.This device has effectively solved the shortcoming that traditional ALD deposition needs heat, can deposit efficiently at a lower temperature several functions film, is conducive to reduce the production cost of film, promotes the development of film and related products.
This device is specially adapted to the accurately preparations such as the silica-base film, aluminum oxide film, titanium nitride membrane of nano thickness.
The peak crystallization in the Raman spectrogram of the microcrystalline silicon film of preparing in this embodiment with 520cm-1 wave number place, the percent crystallization in massecuite of this film sample is 51.8%, changes the microcrystalline silicon film that film deposition conditions can make different percent crystallization in massecuites.
The cylindrical tip in the atomic force microscope three-dimensional appearance figure of the microcrystalline silicon film of preparing in this embodiment with microcrystalline silicon film crystal grain.
Adopt hollow cathode plasma to strengthen the method for chemical vapour deposition, hollow cathode effect during due to electric discharge, than classic flat-plate formula ground connection lower electrode arrangement, there is higher discharging efficiency and plasma density, can greatly improve the cleavage rate of reaction monomers, the operating air pressure of plasma body increases, thereby improve the sedimentation rate of film, be conducive to reduce the production cost of microcrystalline silicon film, promote the development of microcrystalline silicon film solar cell and related products.
Claims (1)
1. the method for a plasma enhanced chemical vapor deposition microcrystalline silicon film, it is characterized in that: application is with lower device, this device comprises gas distributing system (1), vacuum chamber (2), array hollow cathode top electrode (3), flat ground connection lower electrode (4), pumped vacuum systems (5), power-supply system (6), the through hole that described array hollow cathode top electrode (3) is 1-3mm with a plurality of equally distributed diameter ranges, the spacing in adjacent hole is 2-4mm, spacing between array hollow cathode top electrode (3) and flat ground connection lower electrode (4) is 5-20mm, array hollow cathode top electrode (3) connects the steam line of gas distributing system (1), the terminal stud of described array hollow cathode top electrode (3) is connected to high voltage electrode one end of described power-supply system (6), and keeping insulation with the vacuum chamber of described device, flat ground connection lower electrode, the ground terminal of described power-supply system (6) is connected on described vacuum chamber (2) and described flat ground connection lower electrode (4),
Comprise the following steps: the loop cycle mode that gas distributing system (1) replaces with pulse is to described array hollow cathode top electrode (3) air feed, from the gas of described gas distributing system (1), first by the through hole on described array hollow cathode top electrode (3), then enter vacuum chamber (2); Between described array hollow cathode top electrode (3) and described flat ground connection lower electrode (4), apply voltage, ionization of gas is produced to plasma body and carry out thin film deposition, plasma discharge power 30～400W;
Described gas distributing system (1) comprises at least two-way gas piping, and each gas piping comprises check valve, operated pneumatic valve switch and mass flowmeter; Wherein operated pneumatic valve closes the period 0.01～10 second scope, and time precision is less than 0.01 second;
Described power-supply system (6) out-put supply dutycycle 5～90%;
The loop cycle mode that gas distributing system (1) replaces with pulse is to array hollow cathode top electrode (3) supply response monomer gas and argon gas;
Described flat ground connection lower electrode (4) is heated to 40-600 ℃.
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| CN102800749B (en) * | 2012-07-14 | 2015-11-18 | 中国科学院等离子体物理研究所 | A kind of with silicon nanowire suede non-/ preparation method of microcrystalline silicon film material |
| CN103938187B (en) * | 2014-04-29 | 2016-07-06 | 东莞职业技术学院 | Large area film deposition PECVD electrode structure and equipment |
| CN105483654A (en) * | 2016-01-22 | 2016-04-13 | 华北电力大学（保定） | Device for producing nano-crystalline silicon thin film |
| CA3058468A1 (en) * | 2017-03-31 | 2018-10-04 | Duralar Technologies, Llc | Systems and methods for coating surfaces |
| CN108048820A (en) * | 2017-12-22 | 2018-05-18 | 江苏鲁汶仪器有限公司 | Vapor deposition apparatus and vapor deposition method |
| CN108459012A (en) * | 2017-12-28 | 2018-08-28 | 中国科学院合肥物质科学研究院 | Portable laser plasma spark electric discharge component spectrum detecting system |
| CN110331373A (en) * | 2019-07-04 | 2019-10-15 | 国家电网有限公司 | A kind of device and method for realizing the regulation of solid insulation surface conductivity |
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