CN102569533B - Method for preparing passivation antireflection film on front surface of crystalline silicon solar battery - Google Patents
Method for preparing passivation antireflection film on front surface of crystalline silicon solar battery Download PDFInfo
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- CN102569533B CN102569533B CN201210077168.3A CN201210077168A CN102569533B CN 102569533 B CN102569533 B CN 102569533B CN 201210077168 A CN201210077168 A CN 201210077168A CN 102569533 B CN102569533 B CN 102569533B
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000002161 passivation Methods 0.000 title abstract description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000005245 sintering Methods 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 238000004381 surface treatment Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 60
- 229910052710 silicon Inorganic materials 0.000 claims description 44
- 239000010703 silicon Substances 0.000 claims description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000012528 membrane Substances 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 238000000427 thin-film deposition Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- -1 hydrogen silicon nitride Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 9
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 239000000376 reactant Substances 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000007781 pre-processing Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of solar batteries, and in particular relates to a method for preparing a film with antireflection and passivation functions on a front surface of a crystalline silicon solar battery. The method comprises the following steps of: (1) performing battery preprocessing, namely diffusing a baseboard of which the substrate is a textured monocrystalline or polycrystalline silicon wafer to prepare a p-n junction; (2) performing ion surface bombardment, namely feeding argon into a high vacuum environment, and performing surface treatment on the substrate by using an ion source; (3) performing film deposition, namely under the condition that the baseboard is heated, feeding reactant gas, and depositing a hydrogen-containing silicon nitride film or a silicon dioxide/hydrogen-containing silicon nitride film on the substrate by intermediate frequency twin target magnetron sputtering; and (4) performing high-temperature sintering, namely printing the battery and sintering the battery at high temperature. The preparation method is rich in raw material source and low in cost and is safely used, and the low temperature and energy consumption of a preparation process and high uniformity of large-area deposition are achieved; and in addition, through the deposited film, the minority carrier lifetime of the solar battery can be obviously prolonged, surface reflectivity is lowered, and the optical performance and the electrical performance of the crystalline silicon solar battery are improved.
Description
Technical field
The invention belongs to technical field of solar cells, particularly crystal-silicon solar cell front surface has the preparation method of the film of antireflective and deactivation function.
Background technology
Promote conversion efficiency and reduce the developing direction that cost of manufacture is solar cell industry always, for crystal-silicon solar cell, reducing silicon chip surface recombination rate can promote silicon chip electric property effectively; Light trapping structure can be made at battery surface simultaneously, reduce the reflection of incident light.
Surface due to crystalline silicon is not desirable lattice period structure, there is many surface dangling bonds, can increase the recombination-rate surface of silicon chip, reduces the short-circuit current density of battery.Therefore, need to deposit one deck passivating film at battery surface, with saturated surface dangling bonds, reduce surface density of states.
Silicon nitride film according to hydrogen atoms is passivation layer, and on the one hand hydrogen atom wherein can saturated surface dangling bonds; On the other hand because silicon nitride film has higher fixed positive charge density, the minority carrier concentration on surface can be reduced by field effect passivation.For polycrystal silicon cell, in high-temperature sintering process subsequently, the hydrogen atom in film can also be diffused in wafer bulk, fills the defect center between lattice, realizes body passivation effect.
The antireflective coating of battery surface can promote the utilization of battery to incident light.Silicon nitride film is situated between silicon and air due to refractive index, can be deposited on silicon chip front surface as antireflective coating.Simultaneously through the optimization of thickness, antireflection layer can make visible light wave range in sunlight have minimum at the reflectivity of silicon chip surface.
Owing to having passivation and antireflecting advantage concurrently, hydrogeneous silicon nitride film has been widely used in solar cell front surface.At present, in industrial production, main using plasma enhancing chemical vapour deposition (CVD) (PECVD) method is prepared.But PECVD method silane used is a kind of inflammable and explosive gas, require extremely strict to the security protection stored and use; And silane at present still can not be completely domestic, and raw material depends on import, with high costs.When another shortcoming of PECVD method is continuous coating in same chamber, film thickness uniformity is difficult to ensure, has aberration between silicon chip.
Adopt the silicon nitride film that magnetron sputtering deposition is hydrogeneous, it can overcome above-mentioned deficiency.For rf magnetron sputtering, intermediate frequency twin-target sputtering significantly decreases the bombardment of plasma to substrate, and in deposition process, the damage of substrate surface is less, can obtain higher minority carrier lifetime.Because magnetron sputtering can introduce ion source easily, therefore can carry out preliminary treatment to silicon chip surface before deposition, remove surface impurity, improve surface texture.Number of patent application is 200610022062.8, publication number is CN101165205 denomination of invention: a kind ofly adopt the standby application for a patent for invention of mixing the method for hydrogen silicon nitride film of intermediate frequency twin-target sputtering legal system, the method is under 200 ~ 400 DEG C of scopes heat situation to solar battery sheet, reactant gas nitrogen is filled with in magnetron sputtering plating operating room, be filled with ammonia simultaneously, utilize the twin intermediate frequency target rotated to its magnetron sputtering, utilize plasma emission spectral intensity monitor closed loop balance control device to carry out closed loop flow control to being filled with reacting gas nitrogen simultaneously, ammonia flow is controlled with mass flowmenter, on cell piece, deposition mixes the anti reflection passive film of hydrogen silicon nitride.The method does not use ion source to carry out preliminary treatment to silicon chip surface; In addition, in order to add hydrogen atom in film, reacting gas have employed ammonia, and this cannot control separately the ratio of hydrogen atom, and deposition velocity is comparatively slow, and its surface reflectivity is high, and optics and the electric property of crystal-silicon solar cell are poor.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide and a kind ofly prepare at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film, these preparation method's raw material sources are extensive, cost is lower and use safety, temperature and the energy consumption of preparation technology are lower, the uniformity of extensive deposition is good, in addition the film deposited significantly can increase the minority carrier life time of solar cell, reduces surface reflectivity, promotes optics and the electric property of crystal-silicon solar cell.
In order to overcome above-mentioned technical purpose, the present invention realizes by following technical scheme:
Of the present inventionly a kind ofly prepare at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film, its concrete steps are:
(1) battery technique in early stage: select substrate to be the substrate of textured monocrystalline or polysilicon chip, and carry out diffusion for p-n junction;
(2) ion surface bombardment: be filled with argon gas under high vacuum environment, with ion source, surface treatment carried out to substrate;
(3) thin film deposition: when substrate is heated, be filled with reacting gas, adopts intermediate frequency twin-target sputtering, goes out silicon nitride film on substrate at deposited on substrates;
(4) high temperature sintering: after printed battery, high temperature sintering is carried out to battery.
In the present invention, in the thin film deposition steps of described step (3), silicon nitride film is for there being two kinds of forms:
The first, described silicon nitride film contains the silicon nitride film of hydrogen atom, and this thickness depositing the silicon nitride film containing hydrogen atom is 40 ~ 120nm, and refractive index is 1.90 ~ 2.20, and the hydrogen atom containing atomic ratio 8% ~ 20% in silicon nitride film.Described reacting gas is the mist that nitrogen and hydrogen form.
The second, described silicon nitride film is the bilayer film of the silicon nitride of silicon dioxide/hydrogeneous.
When substrate is heated, be first filled with oxygen, adopt intermediate frequency twin-target sputtering, deposit silica membrane on silicon substrate; And then re-fill nitrogen and hydrogen, silica membrane deposits hydrogeneous silicon nitride film, to form the bilayer film of the silicon nitride of silicon dioxide/hydrogeneous.And the silica-film thickness deposited is 5 ~ 25nm; The silica membrane refractive index deposited is 1.35 ~ 1.65; The hydrogeneous silicon nitride film thickness deposited is 40 ~ 150nm; The hydrogeneous silicon nitride film refractive index deposited is 1.85 ~ 2.35; Hydrogen atom containing atomic ratio 10% ~ 20% in the hydrogeneous silicon nitride film deposited.
Stating base plate heating temperature in step (3) is 150 ~ 300 DEG C.
In described step (4), during high temperature sintering, temperature is 400 ~ 900 DEG C.
Compared with prior art, the invention has the beneficial effects as follows:
(1) crystal-silicon solar cell front surface of the present invention prepare raw material sources that method that passivated reflection reducing penetrates film adopts extensively, cost is lower, safe and reliable;
(2) heating-up temperature of preparation method's employing of the present invention is lower, its less energy consumption, the uniformity of its extensive deposition is good, and the film deposited significantly can increase the minority carrier life time of solar cell, reduce surface reflectivity, promote optics and the electric property of crystal-silicon solar cell.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail:
Fig. 1 of the present inventionly prepares at crystal-silicon solar cell front surface the method flow diagram that passivated reflection reducing penetrates film;
Fig. 2 penetrates film schematic diagram at crystal-silicon solar cell individual layer passivated reflection reducing described in the embodiment of the present invention one;
Fig. 3 is the crystal-silicon solar cell dual layer passivation antireflection film schematic diagram described in the embodiment of the present invention two;
Fig. 4 is the vertical view of the intermediate frequency twin-target sputtering equipment in coupled ion source of the present invention;
Fig. 5 is the end view of chain-type sintering furnace of the present invention.
Embodiment
Prepare at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film below by way of two embodiments be described in detail of the present invention:
Embodiment one:
The present embodiment one prepares at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film, specifically provides and adopt intermediate frequency twin-target sputtering to prepare the method that crystal-silicon solar cell front surface individual layer passivated reflection reducing penetrates film.As shown in Figure 2, the structure of described crystal-silicon solar cell is not limited to conventional monocrystalline silicon or polycrystalline silicon solar cell, it specifically comprises p-n junction 1, the passivated reflection reducing that stratiform arranges and penetrates rete 2, front surface grid line metal electrode 3, backplate 4, wherein passivated reflection reducing penetrates the silicon nitride layer (SiNx:H) that the thin-film material that rete 2 adopts is hydrogen atoms, in addition, this crystal-silicon solar cell, can also have backside passivation layer, metallic coil is around running through and the new structure such as back side fourchette.
The concrete steps of the present embodiment are as follows: (as shown in Figure 1, Figure 2, shown in Fig. 4, Fig. 5)
(1) battery technique in early stage: select substrate to be the substrate of textured monocrystalline or polysilicon chip, monocrystalline silicon piece or polysilicon chip are carried out standard RCA wet chemical cleans, remove damage layer, carry out making herbs into wool, diffusion subsequently for p-n junction;
(2) ion surface bombardment: be filled with argon gas under high vacuum environment, with ion source, surface treatment carried out to substrate; Specifically: silicon chip 1 is put on the dolly 15 of magnetron sputtering vacuum chamber 7, open vacuum pump 9, vacuum is evacuated to 1 × 10
-3pa.Pass into argon gas (Ar), open the choke valve of vacuum pump 9, operating air pressure is adjusted to 0.2 ~ 0.6Pa.Open the power supply of ion source 12, by power stability to 300W.The dolly 15 being loaded with silicon chip 1 is moved with the direction horizontal reciprocating of the speed of 500mm/min along guide rail 14, to silicon chip surface bombardment 5min, can by thinning for sample surfaces 10 ~ 20nm.
(3) thin film deposition: when substrate is heated, be filled with reacting gas, adopt intermediate frequency twin-target sputtering, go out passivated reflection reducing at deposited on substrates and penetrate rete 2 (hydrogeneous silicon nitride layer (SiNx:H)) on substrate, concrete operation step is: close ion source 12, open the power supply of the twin silicon target 13 of intermediate frequency, gradually by power ascension to 2 ~ 3W/cm
2, pre-sputtering 5min.A certain proportion of nitrogen (N is added in mixing chamber 11
2) and hydrogen (H
2), subsequently gas is passed into vacuum chamber 7, readjust choke valve, make operating air pressure be stabilized in certain value between 0.4 ~ 1.3Pa.By dolly 15 temperature constant at 150 ~ 300 DEG C, after pre-sputtering terminates, dolly 15 moves with the direction horizontal reciprocating of the speed of 500mm/min along guide rail 14.According to the data that pre-stage test accumulates, after film reaches 40 ~ 120nm thickness, stop sputtering, take out after water-cooled cooling is carried out to crystalline silicon substrate.
(4) above-mentioned film according to actual needs, can adjust the ratio of nitrogen in working gas, to make the refractive index of film between 1.90 ~ 2.20; Can adjust the ratio of hydrogen in working gas, to make hydrogen atom atomic ratio in the film reach 8 ~ 20%, wherein atomic ratio can compose (FTIR) and secondary ion mass spectroscopy (SIMS) is measured with Fourier transform infrared.
(5) high temperature sintering: carry out high temperature sintering to battery after printed battery, fully diffuses in wafer bulk to make hydrogen atom.In order to promote the output of cell piece, the present embodiment does not adopt separately rapid thermal annealing to carry out the body passivation of silicon chip, but combines the high-sintering process after electrode preparation, allows battery only stand a pyroprocess.As shown in Figure 5, high temperature sintering furnace is chain type three-temperature-zone sintering furnace, is respectively baking zone 16, sintering zone 17 and cooling zone 18.High temperature sintering district temperature range is 400 ~ 900 DEG C, and sintering time is 20 ~ 50s.Silicon chip after plated film is carried out silk screen printing and prepare front surface metal grid lines 3 and back electrode 4, then send into sintering furnace and sinter, after sintering, can find that crystalline silicon volume defect significantly reduces by light beam induced current (LBIC) test.
Embodiment two:
The present embodiment is substantially identical with above-described embodiment one, and its difference is: described passivated reflection reducing is penetrated the thin-film material that rete adopts and is followed successively by silicon dioxide 5 (i.e. SiO
2) and hydrogeneous silicon nitride 6 (i.e. SiNx:H), this namely passivated reflection reducing penetrate the bilayer film that rete is the silicon nitride of silicon dioxide/hydrogeneous.
The concrete steps of the present embodiment are as follows: (as shown in Fig. 1, Fig. 3, Fig. 4, Fig. 5)
(1) battery technique in early stage: monocrystalline silicon piece or polysilicon chip are carried out standard RCA wet chemical cleans, removes damage layer.Carry out making herbs into wool, diffusion subsequently for p-n junction.
(2) ion surface bombardment: put into by silicon chip 1 on the dolly 15 of pre-vacuum chamber 8, opens vacuum pump 9, vacuum chamber 7 air pressure is evacuated to 1 × 10
-3pa.Pass into argon gas (Ar), open the choke valve of vacuum pump 9, operating air pressure is adjusted to 0.2 ~ 0.6Pa; Open ion source 12 power supply, by power stability to 300W.The dolly 15 being loaded with silicon chip 1 is moved with the direction horizontal reciprocating of the speed of 500mm/min along guide rail 14, to silicon chip surface bombardment 5min, can by thinning for sample surfaces 10 ~ 20nm.
(3) thin film deposition: close ion source 12, open the power supply of the twin silicon target 13 of intermediate frequency, gradually by power ascension to 2 ~ 3W/cm
2, pre-sputtering 5min.Oxygen (O is passed in vacuum chamber 7
2), readjust choke valve, make operating air pressure be stabilized in certain value between 0.4 ~ 1.3Pa.By dolly 15 temperature constant at 150 ~ 300 DEG C, after pre-sputtering terminates, dolly 15 moves with the direction horizontal reciprocating of the speed of 500mm/min along guide rail 14.Close intermediate frequency power supply after the silicon dioxide layer 5 of deposition about 5 ~ 25nm, remove dolly 15.Close oxygen valve, in mixing chamber 11, pass into nitrogen and hydrogen, regulate choke valve, make operating air pressure be stabilized in certain value between 0.4 ~ 1.3Pa.After opening intermediate frequency power supply, dolly 15 moves with the direction horizontal reciprocating of the speed of 500mm/min along guide rail 14, and silica membrane 5 deposits hydrogeneous silicon nitride film 6.According to the data that pre-stage test accumulates, after film reaches 40 ~ 150nm thickness, stop sputtering, take out after water-cooled cooling is carried out to crystalline silicon substrate.
(4) above-mentioned film according to actual needs, and the ratio of adjustment oxygen in mist, to make the refractive index of silica membrane between 1.35 ~ 1.65; The ratio of adjustment nitrogen in working gas, to make the refractive index of film between 1.85 ~ 2.35; The adjustment ratio of hydrogen in working gas, to make hydrogen atom atomic ratio in the film reach 10 ~ 20%, wherein atomic ratio can compose (FTIR) and secondary ion mass spectroscopy (SIMS) is measured with Fourier transform infrared.
(5) high temperature sintering: adopt the high temperature sintering furnace identical with embodiment one.Silicon chip after plated film is carried out silk screen printing and prepares front surface metal grid lines and back electrode, send into sintering furnace again to sinter, high temperature sintering district temperature range is 400 ~ 900 DEG C, sintering time is 20 ~ 50s, can find that crystalline silicon volume defect significantly reduces after sintering by light beam induced current (LBIC) test.
Claims (4)
1. prepare at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film, its concrete steps are:
(1) battery technique in early stage: select substrate to be the substrate of textured monocrystalline or polysilicon chip, and carry out diffusion for p-n junction;
(2) ion surface bombardment: be filled with argon gas under high vacuum environment, with ion source, surface treatment carried out to substrate;
(3) thin film deposition: when substrate is heated, be first filled with oxygen, adopts intermediate frequency twin-target sputtering, deposits silica membrane on silicon substrate; And then re-filling nitrogen and hydrogen, silica membrane deposits hydrogeneous silicon nitride film, and to form the bilayer film of the silicon nitride of silicon dioxide/hydrogeneous, and the silica-film thickness deposited is 5 ~ 25nm; The silica membrane refractive index deposited is 1.35 ~ 1.65; The hydrogeneous silicon nitride film thickness deposited is 40 ~ 150nm; The hydrogeneous silicon nitride film refractive index deposited is 1.85 ~ 2.35; Hydrogen atom containing atomic ratio 10% ~ 20% in the hydrogen silicon nitride film deposited;
(4) high temperature sintering: after printed battery, high temperature sintering is carried out to battery.
2. according to claim 1ly prepare at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film, it is characterized in that: described ion source and substrate setting parallel to each other.
3. according to claim 1ly prepare at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film, it is characterized in that: described base plate heating temperature is 150 ~ 300 DEG C.
4. according to claim 1ly prepare at crystal-silicon solar cell front surface the method that passivated reflection reducing penetrates film, it is characterized in that: in described step (4), during high temperature sintering, temperature is 400 ~ 900 DEG C.
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| US11313034B2 (en) * | 2016-11-18 | 2022-04-26 | Applied Materials, Inc. | Methods for depositing amorphous silicon layers or silicon oxycarbide layers via physical vapor deposition |
| CN108649101B (en) * | 2018-05-09 | 2020-11-03 | 江西展宇新能源股份有限公司 | Hydrogen atom passivation method and hydrogen atom passivation device |
| CN112133764B (en) * | 2020-09-18 | 2021-11-26 | 江苏东鋆光伏科技有限公司 | PERC battery prepared by magnetron sputtering method and preparation process thereof |
| CN113737145A (en) * | 2021-09-03 | 2021-12-03 | 中国科学院半导体研究所 | Preparation method of reflectivity-adjustable semiconductor laser cavity mask |
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| AU2006203466A1 (en) * | 2006-02-21 | 2007-09-06 | Council Of Scientific & Industrial Research | An improved solar selective coating having higher thermal stability useful for harnessing solar energy and a process for the preparation thereof |
| CN101165205A (en) * | 2006-10-18 | 2008-04-23 | 甘国工 | Method and device for coating anti reflection passive film on crystal silicon solar cell sheet |
| EP1976022A3 (en) * | 2007-03-29 | 2008-12-03 | Applied Materials, Inc. | Method and device for producing an anti-reflection or passivation layer for solar cells |
| CN101805891B (en) * | 2010-04-01 | 2012-01-04 | 河北大学 | Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films |
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