CN102903785A - Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation - Google Patents
Method for improving solar cell sheet conversion efficiency by adopting hydrogenation passivation Download PDFInfo
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- CN102903785A CN102903785A CN2011102138629A CN201110213862A CN102903785A CN 102903785 A CN102903785 A CN 102903785A CN 2011102138629 A CN2011102138629 A CN 2011102138629A CN 201110213862 A CN201110213862 A CN 201110213862A CN 102903785 A CN102903785 A CN 102903785A
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- passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention relates to the manufacturing of crystalline silicon solar energy and particularly relates to a method for improving the solar cell sheet conversion efficiency by adopting hydrogenation passivation. A hydrogenated silicon nitride film layer is deposited on a solar cell sheet through microwaves and is used as a surface passivation layer and an antireflection layer of the conversion efficiency. Hydrogen is introduced before the silicon nitride film layer is formed and is ionized to passivate the cell sheet; after a suspension bond is neutralized, a mixture of precursor gas is introduced to form the silicon nitride layer which has a suitable refractive index, suitable mass density and suitable hydrogen concentration; and the silicon nitride film layer can be used as an antireflection/passivation layer on the solar cell sheet. The silicon nitride layer can be formed on the solar cell sheet through the mixture which basically contains silane and ammonia gas. A plurality of cell sheets are placed on a carrying plate and the carrying plate is conveyed into a depositing cavity to further improve the production capacity.
Description
Technical field
The present invention relates to the manufacturing of crystal silicon solar, specifically a kind of employing increases the method that the hydrogen passivation improves the solar battery sheet conversion efficiency.
Background technology
Solar cell is the photoelectric device that solar energy can be directly changed into electric energy.The most general solar cell material is silicon, exists with the form of monocrystalline or polysilicon.Owing to utilize the cost of electricity-generating of silica-based solar cell to be higher than the cost of electricity-generating of conventional method, can reduce cost of electricity-generating by the method that improves solar battery efficiency.
Cell piece comprises the base, is typically P type silicon, and the emitter region is typically N-type silicon P-N interface and dielectric layer.The P-N interface is arranged between the base and emitter region of solar battery sheet, and excites the generation electron hole pair when incident light.Dielectric layer is used as the passivation layer on surface, emitter region equally as the antireflection layer of solar battery sheet.
When electronics and hole generation compound tense, wherein, electronics and movement of hole opposite direction, compound each other.Each electron-hole pair is when solar cell is compound, and charge carrier disappears, and can reduce thus the efficient of solar cell.In the compound intrinsic silicon that can occur in cell piece or on the surface of cell piece.In intrinsic silicon, compound is because the quantity of defective determines.On the surface of cell piece, the compound unsaturation dangling bonds that determined namely to be present in the surface by the quantity of dangling bonds.Because the silicon crystal lattice of cell piece ends at the cell piece surface, so dangling bonds also are positioned at the surface of cell piece.These unsaturated chemical bonds play a part defective, and are positioned at the energy band scope of silicon, and therefore become the recombination site of electron hole pair.
By reducing surface recombination, the surface passivation of cell piece can greatly improve the efficient of solar energy solar battery sheet.Passivation is defined as the chemistry termination of the lip-deep dangling bonds of silicon crystal lattice.For the surface of passivation cell sheet, form from the teeth outwards dielectric layer.Thereby the quantity of lip-deep dangling bonds is reduced by 3 or 4 orders of magnitude.For solar cell application, dielectric layer is silicon nitride layer normally.Most of dangling bonds are saturated with silicon or nitrogen-atoms.Because silicon nitride is the amorphous material, the silicon crystal lattice between the emitter region extremely mates, and the non crystalline structure mismatch of dielectric layer.Therefore, the quantity of dangling bonds is enough to significantly reduce the efficient of solar battery sheet on the surface after dielectric layer forms, and this just requires the additional passivation on surface, such as the hydrogen passivation.In the situation of polysilicon solar cell, hydrogen can help the defect center on the passivation crystal boundary.
When dielectric layer is silicon nitride layer, by introducing the optimal concentration of the hydrogen atom in the intrinsic dielectric layer.Optimum hydrogen atom concentration is subjected to a plurality of factor affecting, comprises the method for property of thin film and dielectric layer, changes between 5% and 20%.After having deposited dielectric layer, solar battery sheet carries out high-temperature annealing process, is sometimes referred to as sintering process, and cell piece forms Metal Contact.
As everyone knows, the optimum hydrogen atom concentration in the intrinsic dielectric layer is the key parameter for the hydrogen atom passivation technology.For example, according to estimates because the surface lacks the hydrogen atom passivation, can will be to 12-13% from about 14-15% with the efficient of cell piece.
Except surface passivation, can improve by antireflection layer the efficient of cell piece.When light enters when a kind of from a kind of medium, when perhaps entering silicon chip from glass, part light can reflect between two media.Antireflection layer is arranged between the two media.Because silicon nitride can subtract in order to the suspension on the saturated cell piece, because it has the refractive index that can be adjusted into predetermined value.Silicon nitride is as antireflection layer and passivation layer.The problem of deposited silicon nitride comprises that production capacity crosses low and bad film homogeneity on cell piece.The production capacity of silicon nitride depositing system is crossed the low final solar battery sheet cost that increases.Property of thin film inhomogeneity between sheet may reduce the efficient that affects solar battery sheet.
Summary of the invention
The invention provides a kind of employing and increase the method that the hydrogen passivation improves the solar battery sheet conversion efficiency.For achieving the above object, the technical solution used in the present invention is:
A kind of employing increases the method that the hydrogen passivation improves the solar battery sheet conversion efficiency: by microwave on solar battery sheet depositing hydrogenated silicon nitride film layer as surface passivation layer and the antireflection layer of conversion efficiency.
Solar battery sheet is placed in the process cavity, pass into first the hydrogen of 100-4000sccm as passivation gas, produce plasma by microwave, pass into again the NH of 100-5000sccm
3SiH with 200-2000sccm
4As precursor gas, utilize microwave that it is ionized, keep the air pressure of 30Pa in the chamber, Microwave Power Density 0.54W/cm
2, deposited silicon nitride rete on substrate.
The flow of the described passivation gas that passes into is more than or equal to the precursor gas flow.The hydrogen that contains 5%-15% in the silicon nitride film layer of described hydrogenation, mass density are 2.6g/cm
3-2.8g/cm
3, refractive index is 2.0-2.2.
The advantage that the present invention has:
The present invention adopts and increases the method for hydrogen passivation at the solar battery sheet deposited silicon nitride and used as high-quality surface passivation layer and antireflection layer.Silicon nitride layer can have suitable refractive index, and density and hydrogen concentration are so that this layer is used as the antireflection layer on cell piece.
The present invention passed into hydrogen before forming silicon nitride film layer, and with its ionization, cell piece is carried out passivation, in and pass into the mixture of precursor gas after the dangling bonds, formation has appropriate index, mass density, the silicon nitride layer of hydrogen concentration, this silicon nitride layer can be as the antireflective/passivation layer on the solar battery sheet.Can form silicon nitride layer at solar battery sheet by the mixture that substantially comprises silane and ammonia.A plurality of cell pieces are placed on the support plate, and carrier plate transmission is advanced deposition chambers, with further lifting production capacity.
Embodiment
Adopting the PECVD system to process the system of area battery sheet can be with the SiN layer of the hydrogenation of high speed deposition homogeneous.One or more cell piece depositions are arranged in two substantially parallel electrodes of plasma chamber.Chamber distribution substrate supports as the second electrode as the first electrode and chamber cell piece.Precursor gaseous mixture passes into chamber, applies the microwave power activated plasma by one in the electrode, flows through the surface of cell piece with the film material of deposition of desired.Can 36 cell pieces of primary depositing when the present invention operates.
Embodiment 1
Place 36 solar battery sheets at loading stage, transport tape by interior transmission system, process cavity station transmission speed is 80cm/min, pass into first 4000sccm as the hydrogen of passivation gas, produce plasma, microwave power 3300W by microwave, deposition pressure 30Pa, 450 ℃ of depositing temperatures, the passivation of use hydrogen improves the mass density of rete, then passes into the NH of 2500sccm again
3SiH with 1000sccm
4As precursor gas, utilize frequency for the microwave of 2.45GHz it to be ionized, in chamber, keep simultaneously the air pressure of 30Pa, so make its silicon nitride film layer depositing hydrogenated on the substrate as solar battery sheet on passivation and antireflection layer.The hydrogen concentration of the SiN layer of deposition can have for the suitable property of thin film of antireflective/passivation layer.
The mass density of measuring the SiN layer of deposition is 2.6-2.8g/cm
3, refractive index is at 2.0-2.2, and hydrogen concentration is at about 5%-15%.
In addition, the mass density of SiN affects hydrogen concentration during the sintering process.After sintering, for extra-low density SiN 2.2g/g/cm for example
3, hydrogen concentration can reduce 60%, and for more highdensity SiN layer, hydrogen loss can be ignored.Can be sure of that annealed layer has the mass density loss and namely is less than 2.6g/cm
3, can allow the too much hydrogen atom during the sintering process to move, so that hydrogen molecule forms and diffuses out the SiN layer.On the contrary, can be sure of to have the 2.8g/cm of being higher than
3The situation of mass density under, do not allow the enough hydrogen migration rates during the sintering process, thereby avoided hydrogen atom to move to the dangling bonds on non-passivation surface and neutralization surface.
The hydrogen content that records rete through experiment can reach 25% or 30% even higher.With the SiN passivation film of so high hydrogen concentration, minority carrier life time is the 10 microsecond orders of magnitude, and the decay by minority carrier life time can draw, the recombination rate of charge carrier is accelerated, characterize the observational measurement of the passivation effect of surface or body material, therefore, greatly reduced the efficient of solar energy.
Embodiment 2
Place solar battery sheet at loading stage, by interior transmission system, other station transmission belt speed of process cavity station 80cm/min 1560cm/min, pass into first the hydrogen of 3500sccm as passivation gas, can produce plasma by microwave, pass into again the NH of 500sccm
3SiH with 2800sccm
4As precursor gas, utilize frequency for the microwave of 2.45GHz it to be ionized, deposited silicon nitride rete on substrate.
Embodiment 3
Place solar battery sheet at loading stage, by interior transmission system, process cavity transmission station 80cm/min, other transmission station belt speed 1560cm/min, pass into first the hydrogen of 5000sccm as passivation gas, can produce plasma by microwave, process atmospheric pressures 30Pa passes into the NH of 35000sccm again
3SiH with 1000sccm
4As precursor gas, utilize frequency for the microwave of 2.45GHz it to be ionized, deposited silicon nitride rete on substrate.
Claims (4)
1. an employing increases the method that the hydrogen passivation improves the solar battery sheet conversion efficiency, it is characterized in that: by microwave on solar battery sheet depositing hydrogenated silicon nitride film layer as surface passivation layer and the antireflection layer of conversion efficiency.
2. increase the method that the hydrogen passivation improves the solar battery sheet conversion efficiency by employing claimed in claim 1, it is characterized in that: solar battery sheet is placed in the process cavity, pass into first the hydrogen of 100-4000sccm as passivation gas, produce plasma by microwave, pass into again the NH of 100-5000sccm
3SiH with 200-2000sccm
4As precursor gas, utilize microwave that it is ionized, keep the air pressure of 30Pa in the chamber, Microwave Power Density 0.54W/cm
2, deposited silicon nitride rete on substrate.
3. increase the method that the hydrogen passivation improves the solar battery sheet conversion efficiency by employing claimed in claim 1, it is characterized in that: the flow of the described passivation gas that passes into is more than or equal to the precursor gas flow.
4. increase the method that the hydrogen passivation improves the solar battery sheet conversion efficiency by employing claimed in claim 1, it is characterized in that: contain the hydrogen of 5%-15% in the silicon nitride film layer of described hydrogenation, mass density is 2.6g/cm
3-2.8g/cm
3, refractive index is 2.0-2.2.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037264A (en) * | 2014-06-12 | 2014-09-10 | 中节能太阳能科技（镇江）有限公司 | Method for depositing low-surface composite solar cell dielectric layer by means of PECVD (Plasma Enhanced Chemical Vapor Deposition) |
| CN107507762A (en) * | 2017-09-04 | 2017-12-22 | 常州亿晶光电科技有限公司 | A kind of technology for improving silicon nitride film and being rich in hydrogen |
| CN109473508A (en) * | 2018-12-25 | 2019-03-15 | 浙江晶科能源有限公司 | A kind of solar battery method for annealing and device and preparation method of solar battery |
| CN111244223A (en) * | 2018-11-29 | 2020-06-05 | 财团法人金属工业研究发展中心 | Method for forming silicon-based laminated layer and method for manufacturing silicon-based solar cell |
| TWI713229B (en) * | 2019-04-02 | 2020-12-11 | 長生太陽能股份有限公司 | Solar cell and manufacturing method thereof |
| CN113937185A (en) * | 2021-09-26 | 2022-01-14 | 福建新峰二维材料科技有限公司 | Method for manufacturing heterojunction solar cell adopting hydrogen passivation |
| CN114242833A (en) * | 2021-11-18 | 2022-03-25 | 国家电投集团科学技术研究院有限公司 | Silicon wafer processing method of heterojunction solar cell |
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| US20100029038A1 (en) * | 2006-11-22 | 2010-02-04 | Tokyo Electron Limited | Manufacturing method of solar cell and manufacturing apparatus of solar cell |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037264A (en) * | 2014-06-12 | 2014-09-10 | 中节能太阳能科技（镇江）有限公司 | Method for depositing low-surface composite solar cell dielectric layer by means of PECVD (Plasma Enhanced Chemical Vapor Deposition) |
| CN107507762A (en) * | 2017-09-04 | 2017-12-22 | 常州亿晶光电科技有限公司 | A kind of technology for improving silicon nitride film and being rich in hydrogen |
| CN107507762B (en) * | 2017-09-04 | 2019-05-03 | 常州亿晶光电科技有限公司 | A method of it improving silicon nitride film and is rich in hydrogen |
| CN111244223A (en) * | 2018-11-29 | 2020-06-05 | 财团法人金属工业研究发展中心 | Method for forming silicon-based laminated layer and method for manufacturing silicon-based solar cell |
| CN109473508A (en) * | 2018-12-25 | 2019-03-15 | 浙江晶科能源有限公司 | A kind of solar battery method for annealing and device and preparation method of solar battery |
| CN109473508B (en) * | 2018-12-25 | 2023-08-25 | 浙江晶科能源有限公司 | Solar cell annealing method and device and solar cell preparation method |
| TWI713229B (en) * | 2019-04-02 | 2020-12-11 | 長生太陽能股份有限公司 | Solar cell and manufacturing method thereof |
| CN113937185A (en) * | 2021-09-26 | 2022-01-14 | 福建新峰二维材料科技有限公司 | Method for manufacturing heterojunction solar cell adopting hydrogen passivation |
| CN114242833A (en) * | 2021-11-18 | 2022-03-25 | 国家电投集团科学技术研究院有限公司 | Silicon wafer processing method of heterojunction solar cell |
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Application publication date: 20130130 |