CN111244223A - Method for forming silicon-based laminated layer and method for manufacturing silicon-based solar cell - Google Patents
Method for forming silicon-based laminated layer and method for manufacturing silicon-based solar cell Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 126
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 120
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 120
- 239000010703 silicon Substances 0.000 title claims abstract description 120
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims description 73
- 239000000463 material Substances 0.000 claims description 25
- 239000010408 film Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 10
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 10
- 230000007547 defect Effects 0.000 description 19
- 125000004429 atom Chemical group 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 238000000137 annealing Methods 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 125000004430 oxygen atom Chemical group O* 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000003475 lamination Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a method for forming a silicon-based stack, which comprises providing a silicon substrate, wherein the silicon substrate is provided with a first surface and a second surface which are opposite. A first thin film layer is formed on the first surface. And forming a second thin film layer on the second surface. And performing microwave processing on the silicon substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer. A method of fabricating a silicon-based solar cell is also provided.
Description
Technical Field
The present invention relates to a method for forming a stack and a method for manufacturing a solar cell, and more particularly, to a method for forming a silicon-based stack and a method for manufacturing a silicon-based solar cell.
Background
Silicon is the second most abundant element in earth. Since silicon has a deep foundation in the development of the semiconductor industry, most solar cells currently use silicon as a main material. The basic structure of the solar cell is formed by bonding a P-type semiconductor and an N-type semiconductor, and a built-in electric field pointing from N to P is generated at the junction of the N-type semiconductor and the P-type semiconductor. When the sunlight irradiates, the photons provide energy, the generated electrons move to the N-type semiconductor under the action of an electric field, the holes move to the P-type semiconductor, and the charges accumulated at the two sides are connected through a lead, so that the current can be output.
However, many defects, such as dangling bonds (dangling bonds), exist on the surface of silicon-based materials (e.g., a single crystal silicon substrate or an amorphous silicon layer), which easily generate recombination (recombination) of electrons and holes, resulting in a reduced carrier lifetime. Conventionally, a thermal annealing process is used to improve defects on the surface of a silicon-based material, but the conventional heating method is heating from outside to inside, so that the heating is not uniform and takes a long time.
Disclosure of Invention
The invention provides a method for forming a silicon-based stack, which can quickly and uniformly improve the interface defect density between the silicon-based stack and the silicon-based stack.
The invention provides a manufacturing method of a silicon-based solar cell, which can quickly and uniformly improve the interface defect density between a silicon substrate and an upper lamination layer and a lower lamination layer so as to improve the life cycle of a carrier and ensure that the silicon-based solar cell has good photoelectric conversion efficiency.
The invention provides a method for forming a silicon-based stack, which comprises providing a silicon substrate, wherein the silicon substrate is provided with a first surface and a second surface which are opposite. A first thin film layer is formed on the first surface. And forming a second thin film layer on the second surface. And performing microwave processing on the silicon substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer.
In an embodiment of the invention, in the method for forming the silicon-based stack, a material of the first thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide, and a material of the second thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide.
In an embodiment of the invention, in the method for forming the silicon-based stack, a microwave frequency of the microwave process is, for example, between 850MHz and 3 GHz.
In an embodiment of the invention, in the method for forming a silicon-based stack, a power density per unit area of the microwave process is, for example, between 10mW/cm2～1000mW/cm2The microwave process time is, for example, between 10 minutes and 90 minutes.
In an embodiment of the invention, in the method for forming the silicon-based stack, a power density per unit area of the microwave process is, for example, 180-220 mW/cm2The microwave frequency of the microwave process is, for example, between 2.3GHz and 2.5GHz, and the time of the microwave process is, for example, between 25 minutes and 30 minutes.
In an embodiment of the invention, in the method for forming a silicon-based stack, a power density per unit area of the microwave process is, for example, between 140mW/cm2～160mW/cm2The microwave frequency of the microwave process is, for example, between 900MHz to 930MHz, and the time of the microwave process is, for example, between 25 minutes to 30 minutes.
The invention provides a manufacturing method of a silicon-based solar cell, which comprises the steps of providing a semiconductor substrate with a first conductive mode, a first surface and a second surface which are opposite. A first thin film layer is formed on the first surface. And forming a second thin film layer on the second surface. And performing microwave processing on the semiconductor substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer.
In an embodiment of the invention, in the manufacturing method of the silicon-based solar cell, a material of the first thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide, and a material of the second thin film layer includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide.
In an embodiment of the invention, in the method for manufacturing a silicon-based solar cell, a microwave frequency of the microwave process is, for example, between 850MHz and 3 GHz.
In an embodiment of the invention, the silicon-based solar cell is a solar cellIn the method for manufacturing the battery, the power density per unit area of the microwave process is, for example, 10mW/cm2～1000mW/cm2The microwave process time is, for example, between 10 minutes and 90 minutes.
In an embodiment of the invention, in the method for manufacturing a silicon-based solar cell, a power density per unit area of the microwave process is, for example, 180-220 mW/cm2The microwave frequency of the microwave process is, for example, between 2.3GHz and 2.5GHz, and the time of the microwave process is, for example, between 25 minutes and 30 minutes.
In an embodiment of the invention, in the method for manufacturing a silicon-based solar cell, a power density per unit area of the microwave process is, for example, between 140mW/cm2～160mW/cm2The microwave frequency of the microwave process is, for example, between 900MHz to 930MHz, and the time of the microwave process is, for example, between 25 minutes to 30 minutes.
In an embodiment of the invention, the method for manufacturing a silicon-based solar cell further includes forming a first semiconductor layer on the passivated first thin film layer, where the first semiconductor layer has a second conductive type different from the first conductive type. And forming a second semiconductor layer on the passivated second thin film layer, wherein the second semiconductor layer has the same first conduction mode as the semiconductor substrate.
In an embodiment of the invention, the method for manufacturing a silicon-based solar cell further includes forming a first transparent conductive film on the first semiconductor layer. And forming a second transparent conductive film on the second semiconductor layer.
In an embodiment of the invention, the method for manufacturing a silicon-based solar cell further includes forming a first electrode on the first transparent conductive film. And forming a second electrode on the second transparent conductive film.
In an embodiment of the invention, in the manufacturing method of the silicon-based solar cell, the first thin film layer has a second conductive type different from the first conductive type.
In an embodiment of the invention, in the manufacturing method of the silicon-based solar cell, a third electrode is further formed on the first thin film layer. And forming a fourth electrode on the second thin film layer.
In view of the above, in the method for forming a silicon-based stack according to the present invention, the microwave process is performed on the silicon substrate, the first thin film layer and the second thin film layer to rapidly and uniformly passivate the first thin film layer and the second thin film layer, so as to prevent dangling bonds from bonding with other atoms (such as carbon atoms or oxygen atoms) in the air, so as to improve the interface defect density between the silicon substrate and the first thin film layer and the second thin film layer. In addition, in the method for manufacturing a silicon-based solar cell according to the present invention, the semiconductor substrate, the first thin film layer, and the second thin film layer are subjected to a microwave process to rapidly and uniformly passivate the first thin film layer and the second thin film layer. Therefore, the interface defect density between the substrate materials can be improved, and the silicon-based solar cell has good conversion efficiency.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1A is a flow chart of a method of forming a silicon-based stack in accordance with one embodiment of the present invention.
Fig. 1B is a schematic cross-sectional view illustrating a method for forming a silicon-based stack according to an embodiment of the present invention.
Fig. 2 is a flow chart of a method of fabricating a silicon-based solar cell in accordance with an embodiment of the present invention.
Fig. 3 is a schematic cross-sectional view of a silicon-based solar cell according to an embodiment of the invention.
Fig. 4 is a schematic cross-sectional view of a silicon-based solar cell according to another embodiment of the present invention.
Fig. 5 is a life cycle diagram of a carrier passivated by a conventional annealing method for a silicon substrate, a first thin film layer and a second thin film layer of a conventional solar cell.
Fig. 6 is a carrier lifetime diagram of a silicon substrate, a first thin film layer and a second thin film layer of a silicon-based solar cell passivated by microwave according to an embodiment of the invention.
Description of reference numerals:
100: a silicon substrate;
102: a first surface;
104: a second surface;
110. 210, 310: a first thin film layer;
120. 220, 320: a second thin film layer;
200. 300, and (2) 300: a semiconductor substrate;
200 a: a first semiconductor layer;
200 b: a second semiconductor layer;
230: a first transparent conductive film;
240: a second transparent conductive film;
250: a first electrode;
260: a second electrode;
330: a third electrode;
340: and a fourth electrode.
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings of the present embodiments. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The thickness of layers and regions in the drawings may be exaggerated for clarity. The same or similar reference numbers refer to the same or similar elements, and the following paragraphs will not be repeated. In addition, directional terms mentioned in the embodiments, for example: up, down, left, right, front or rear, etc., are directions with reference to the attached drawings only. Accordingly, the directional terminology is used for purposes of illustration and is in no way limiting.
Generally, the silicon-based stack is prone to surface defects during fabrication, and a method for forming the silicon-based stack is provided to uniformly and rapidly reduce the defects between the interfaces of the silicon-based stack.
Fig. 1A is a flow chart of a method of forming a silicon-based stack in accordance with one embodiment of the present invention. Fig. 1B is a schematic cross-sectional view illustrating a method for forming a silicon-based stack according to an embodiment of the present invention. Referring to fig. 1A and 1B, first, a silicon substrate 100 is provided (step S11). The material of the silicon substrate 100 is, for example, monocrystalline silicon, polycrystalline silicon, amorphous silicon or a combination thereof, for example, the silicon substrate 100 can be an N-type monocrystalline silicon substrate, a P-type monocrystalline silicon substrate, an intrinsic amorphous silicon thin film, an N-type amorphous silicon thin film or a P-type amorphous silicon thin film.
It can be seen from fig. 1B that the silicon substrate 100 has opposing first and second surfaces 102 and 104. Next, a first thin film layer 110 is formed on the first surface 102 (step S13), in this embodiment, the material of the first thin film layer 110 includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide. Of course, the material of the first thin film layer 110 is not limited thereto.
Next, a second thin film layer 120 is formed on the second surface 104 (step S15). In the present embodiment, the material of the second thin film layer 120 includes intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide. Of course, the material of the second thin film layer 120 is not limited thereto. Note that the order of step S13 and step S15 may be reversed. That is, in one embodiment, the step S15 may be performed first, and then the step S13 may be performed. Alternatively, in one embodiment, step S13 and step S15 may be performed simultaneously.
In steps S13 and S15, the thin film layer may be formed by a chemical vapor deposition method, a physical vapor deposition method, or an atomic layer deposition method. In the present embodiment, the thin film layer is formed by Chemical Vapor Deposition (CVD) at a process pressure of, for example, 400 millitorr (mTorr) and a radio frequency power of, for example, 500mW/cm2The substrate temperature is, for example, 150 ℃, and the film thickness is, for example, 20 nm, but the steps S13 and S15 are not limited thereto.
After the deposition of the thin film, the silicon substrate 100, the first thin film layer 110 and the second thin film layer 120 are then subjected to a microwave process (step S17). The microwave frequency of the microwave process is, for example, between 850MHz and 3 GHz. The power density per unit area of the microwave process is, for example, between 10mW/cm2～1000mW/cm2In the meantime. The microwave process time is, for example, between 10 minutes and 90 minutes.
In this embodiment, the microwave frequency is preferably 2.4GHz, the unit area of the microwave processThe power density of the product is preferably 200mW/cm2The time of the microwave process is preferably 30 minutes, but the invention is not limited thereto. In another embodiment, the microwave frequency of the microwave process is preferably 915MHz, and the power density per unit area of the microwave process is preferably 150mW/cm2The time of the microwave process is preferably 30 minutes.
The invention utilizes the characteristic that the silicon material is a very good microwave absorber, generates electromagnetic waves through a microwave process and penetrates through an object to generate the full-uniformity heating of polarization oscillation, has shorter time consumption and can achieve the aim of saving energy, thereby overcoming the defects that the traditional annealing process is heating from outside to inside, is easy to heat unevenly and consumes time.
After the silicon substrate 100, the first thin film layer 110 and the second thin film layer 120 are subjected to the microwave process, dangling bonds located on the silicon substrate 100 are inactivated to prevent the dangling bonds from generating bonds (such as carbon atoms or oxygen atoms) with other atoms, and then passivation effect is generated, so that the interface defect density between the silicon substrate 100 and the first thin film layer 110 is improved, and the interface defect density between the silicon substrate 100 and the second thin film layer 120 is improved.
The forming method of the silicon-based laminated layer has the advantages of being rapid, time-saving and capable of heating uniformly, and the purpose of saving energy can be achieved. In this embodiment, compared to the conventional passivation by annealing process, the passivation by microwave process can achieve about 20% energy saving.
The method for forming the silicon-based lamination can be applied to the manufacture of silicon-based solar cells, such as the manufacture of silicon-based heterojunction solar cells. As will be explained below.
Fig. 2 is a flow chart of a method of fabricating a silicon-based solar cell in accordance with an embodiment of the present invention. Fig. 3 is a schematic cross-sectional view of a silicon-based solar cell according to an embodiment of the invention, wherein the silicon-based solar cell is, for example, a silicon-based heterojunction solar cell. Referring to fig. 2 and 3, first, a semiconductor substrate 200 is provided (step S21), wherein the semiconductor substrate 200 is, for example, a silicon substrate, and can be a P-type silicon substrate or an N-type silicon substrate by doping trivalent atoms or pentavalent atoms, respectively. In this embodiment, the semiconductor substrate 200 is an N-type silicon substrate for illustration, but the invention is not limited thereto. In another embodiment, the semiconductor substrate 200 may be a P-type silicon substrate.
Next, the semiconductor substrate 200 has a first surface 201 and a second surface 202 opposite to each other. A first thin film layer 210 is formed on the first surface 201 (step S23). In the present embodiment, the material of the first thin film layer 210 may be amorphous silicon, amorphous silicon nitride, amorphous silicon oxide, amorphous aluminum oxide, or a combination thereof. Of course, the material of the first thin film layer 210 is not limited thereto.
Next, a second thin film layer 220 is formed on the second surface 202 (step S25). The material of the second thin film layer 220 may be amorphous silicon, amorphous silicon nitride, amorphous silicon oxide, amorphous aluminum oxide, or a combination thereof. Of course, the material of the second thin film layer 220 is not limited thereto. Likewise, step S23 and step S25 are not limited in order. The thin film layer may be formed by chemical vapor deposition, physical vapor deposition, or atomic layer deposition.
Then, the semiconductor substrate 200, the first thin film layer 210, and the second thin film layer 220 are subjected to a microwave process (step S27). In the present embodiment, the microwave frequency of the microwave process is, for example, between 850MHz and 3 GHz. The power density per unit area of the microwave process is, for example, between 10mW/cm2～1000mW/cm2In the meantime. The microwave process time is, for example, between 10 minutes and 90 minutes.
After the semiconductor substrate 200, the first thin film layer 210 and the second thin film layer 220 are subjected to the microwave process, dangling bonds located on the semiconductor substrate 200 lose activity, and the dangling bonds are prevented from being bonded with other atoms (such as carbon atoms or oxygen atoms), so that a passivation effect is generated.
Next, a first semiconductor layer 200a is formed on the first thin film layer 210. The semiconductor substrate 200 has a first conductive type, and the first thin film layer 210 has a second conductive type different from the first conductive type. In this embodiment, the first semiconductor layer 200a is illustrated by taking a P-type amorphous silicon layer as an example. The first semiconductor layer 200a is formed by, for example, a chemical vapor deposition method, a physical vapor deposition method, or an atomic layer deposition method.
Next, a second semiconductor layer 200b is formed on the second thin film layer 220, and the second semiconductor layer 200b has the same first conductive type as the semiconductor substrate 200. In this embodiment, the second semiconductor layer 200b is illustrated by taking an N-type amorphous silicon layer as an example. The second semiconductor layer 200b is formed by a chemical vapor deposition method, a physical vapor deposition method, or an atomic layer deposition method.
Further, as shown in fig. 3, a first transparent conductive film 230 is formed on the first semiconductor layer 200a, so that the current collection efficiency can be improved. The material of the first transparent conductive film 230 may be Transparent Conductive Oxide (TCO), such as metal oxide such as Indium Tin Oxide (ITO). The first transparent conductive film 230 is formed by, for example, evaporation or sputtering.
In addition, a second transparent conductive film 240 is formed on the second semiconductor layer 200b, so that the current collection efficiency can be improved. The material of the second transparent conductive film 240 may be Transparent Conductive Oxide (TCO), for example, metal oxide such as Indium Tin Oxide (ITO). The second transparent conductive film 240 is formed by, for example, evaporation or sputtering. Of course, the order of forming the first transparent conductive film 230 and the second transparent conductive film 240 is not limited.
Then, a first electrode 250 is formed on the first transparent conductive film 230. The first electrode 250 can be used to derive the power generated by the silicon-based heterojunction solar cell. The material of the first electrode 250 is, for example, aluminum, gold, silver, or copper.
Finally, a second electrode 260 is formed on the second transparent conductive film 240 to form a silicon-based heterojunction solar cell. The second electrode 260 can be used to conduct the power generated by the silicon-based heterojunction solar cell. The material of the second electrode 260 is, for example, aluminum, gold, silver, or copper. Likewise, the order of forming the first electrode 250 and the second electrode 260 is not limited.
In the method for manufacturing the silicon-based heterojunction solar cell of the embodiment, since the semiconductor substrate 200, the first thin film layer 210 and the second thin film layer 220 are subjected to the microwave process to prevent dangling bonds and other atoms from generating bonds, the interface defect density between the semiconductor substrate 200 and the first thin film layer 210 and the interface defect density between the semiconductor substrate 200 and the second thin film layer 220 are improved, and the silicon-based heterojunction solar cell can have good photoelectric conversion efficiency. Moreover, the microwave treatment has a rapid and uniform effect.
The method of manufacturing the silicon-based Solar Cell of fig. 2 can also be applied to the manufacture of a Passivated Rear electrode Cell (PERC). Fig. 4 is a schematic cross-sectional view of a silicon-based solar cell according to another embodiment of the present invention, wherein the silicon-based solar cell is, for example, a back electrode passivated cell. Referring to fig. 2 and 4, first, a semiconductor substrate 300 is provided (step S21), wherein the semiconductor substrate 300 is, for example, a silicon substrate, and can be a P-type silicon substrate or an N-type silicon substrate by doping trivalent atoms or pentavalent atoms, respectively. In this embodiment, the semiconductor substrate 300 is an N-type silicon substrate, but the invention is not limited thereto. In another embodiment, the semiconductor substrate 300 may be a P-type silicon substrate.
The semiconductor substrate 300 has a first surface 301 and a second surface 302 opposite to each other. The first surface 301 has a textured structure, such as a saw-tooth shape or other structure that allows the first surface 301 to be roughened.
Next, a first thin film layer 310 is formed on the first surface 301 (step S23). The material of the first thin film layer 310 is, for example, silicon oxide, which can be used as an emitter (emitter) of a solar cell. The semiconductor substrate 300 has a first conductive type. The first thin film layer 310 has a second conductive type different from the first conductive type by doping with trivalent atoms or pentavalent atoms. For example, in some embodiments, when the semiconductor substrate 300 is a P-type doped semiconductor, the first thin film layer 310 may be an N-type doped semiconductor. In other embodiments, when the semiconductor substrate 300 is an N-type doped semiconductor, the first thin film layer 310 may be a P-type doped semiconductor.
Next, a second thin film layer 320 is formed on the second surface 302 (step S25). The material of the second thin film layer 320 is, for example, silicon oxide or aluminum oxide.
Then, the semiconductor substrate 300, the first thin film layer 310, and the second thin film layer 320 are subjected to a microwave process (step S27). In the present embodiment, the microwave frequency of the microwave process is, for example, between 850MHz and 3 GHz. The power density per unit area of the microwave process is, for example, between 10mW/cm2～1000mW/cm2In the meantime. The microwave process time is, for example, between 10 minutes and 90 minutes.
After the semiconductor substrate 300, the first thin film layer 310 and the second thin film layer 320 are subjected to the microwave process, dangling bonds located on the semiconductor substrate 300 are inactivated, and the dangling bonds are prevented from being bonded with other atoms (such as carbon atoms or oxygen atoms), so that a passivation effect is generated.
Then, the third electrode 330 is disposed on the first thin film layer 310, and the third electrode 330 is electrically connected to the first thin film layer 310. The material of the third electrode 330 is, for example, aluminum, gold, silver, or copper. Further, the fourth electrode 340 is disposed on the opening of the second thin film layer 320. The material of the fourth electrode 340 is, for example, aluminum, gold, silver, or copper.
Based on the above embodiments, the microwave process is performed on the semiconductor substrate 300, the first thin film layer 310 and the second thin film layer 320, which can prevent dangling bonds and other atoms from generating bonds, and can quickly and uniformly improve the interface defect density between the semiconductor substrate 300 and the first thin film layer 310 and the interface defect density between the semiconductor substrate 300 and the second thin film layer 320, so that the Passivated back electrode Cell (PERC) has good photoelectric conversion efficiency.
Fig. 5 is a life cycle diagram of a carrier passivated by a conventional annealing method for a silicon substrate, a first thin film layer and a second thin film layer of a conventional solar cell. Fig. 6 is a carrier lifetime diagram of a silicon substrate, a first thin film layer and a second thin film layer of a silicon-based solar cell passivated by microwave according to an embodiment of the invention. Referring to fig. 5 and 6, it can be seen from the experimental results that the carrier lifetime after the conventional annealing process is 940 μ s, and the carrier lifetime after the microwave process is 1220 μ s. Therefore, the carrier lifetime can be effectively increased by performing the microwave process on the semiconductor substrate, the first thin film layer and the second thin film layer.
In summary, in the method for forming a silicon-based stack according to the present invention, the silicon substrate, the first thin film layer and the second thin film layer are subjected to a microwave process to rapidly and uniformly passivate the first thin film layer and the second thin film layer, so that dangling bonds and other atoms (such as carbon atoms or oxygen atoms) are prevented from generating bonds, and the interface defect density between the silicon substrate and the first thin film layer and the interface defect density between the silicon substrate and the second thin film layer are improved. In addition, in the manufacturing method of the silicon-based solar cell, the semiconductor substrate, the first thin film layer and the second thin film layer are subjected to microwave processing to rapidly and uniformly passivate the first thin film layer and the second thin film layer, so that dangling bonds and other atoms (such as carbon atoms or oxygen atoms) can be prevented from generating bonding, the interface defect density between the semiconductor substrate and the first thin film layer and the interface defect density between the semiconductor substrate and the second thin film layer are improved, and the silicon-based solar cell has good conversion efficiency.
Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (13)
1. A method of forming a silicon-based stack, comprising:
providing a silicon substrate, wherein the silicon substrate has a first surface and a second surface opposite to each other;
forming a first thin film layer on the first surface;
forming a second thin film layer on the second surface; and
and performing a microwave process on the silicon substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer.
2. The method of claim 1, wherein the first thin film layer comprises intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide, and the second thin film layer comprises intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide, or hafnium oxide.
3. The method of claim 1, wherein the microwave frequency of the microwave process is between 850MHz and 3 GHz.
4. The method of claim 1, wherein the microwave process has a power density per unit area of 10mW/cm2～1000mW/cm2The time of the microwave process is between 10 minutes and 90 minutes.
5. The method of claim 1, wherein the microwave process has a power density per unit area of 180-220 mW/cm2The microwave frequency of the microwave process is between 2.3GHz and 2.5GHz, and the time of the microwave process is between 25 minutes and 30 minutes.
6. The method of claim 1, wherein the microwave process has a power density per unit area of 140mW/cm2～160mW/cm2The microwave frequency of the microwave process is between 900MHz and 930MHz, and the time of the microwave process is between 25 minutes and 30 minutes.
7. A method of fabricating a silicon-based solar cell, comprising:
providing a semiconductor substrate, which is provided with a first conductive mode, a first surface and a second surface which are opposite;
forming a first thin film layer on the first surface;
forming a second thin film layer on the second surface; and
and performing microwave processing on the semiconductor substrate, the first thin film layer and the second thin film layer to passivate the first thin film layer and the second thin film layer.
8. The method of manufacturing a silicon-based solar cell of claim 7, wherein the material of the first thin film layer comprises intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide, and the material of the second thin film layer comprises intrinsic silicon, silicon nitride, silicon oxide, aluminum oxide or hafnium oxide.
9. The method of claim 7, wherein the microwave frequency of the microwave process is between 850MHz and 3 GHz.
10. The method of claim 7, wherein the microwave process has a power density per unit area of 10mW/cm2～1000mW/cm2The time of the microwave process is between 10 minutes and 90 minutes.
11. The method of claim 7, wherein the microwave process has a power density per unit area of 180mW/cm2～220mW/cm2The microwave frequency of the microwave process is between 2.3GHz and 2.5GHz, and the time of the microwave process is between 25 minutes and 30 minutes.
12. The method of claim 7, wherein the microwave process has a power density per unit area of 140mW/cm2～160mW/cm2The microwave frequency of the microwave process is between 900MHz and 930MHz, and the time of the microwave process is between 25 minutes and 30 minutes.
13. The method of fabricating a silicon-based solar cell of claim 7, further comprising:
forming a first semiconductor layer on the passivated first thin film layer, wherein the first semiconductor layer has a second conduction mode different from the first conduction mode;
forming a second semiconductor layer on the passivated second thin film layer, wherein the second semiconductor layer has the same first conduction mode as the semiconductor substrate;
forming a first transparent conductive film on the first semiconductor layer; forming a second transparent conductive film on the second semiconductor layer;
forming a first electrode on the first transparent conductive film; and
and forming a second electrode on the second transparent conductive film.
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