CN116093191A - Solar cell and photovoltaic module - Google Patents
Solar cell and photovoltaic module Download PDFInfo
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- CN116093191A CN116093191A CN202310214703.3A CN202310214703A CN116093191A CN 116093191 A CN116093191 A CN 116093191A CN 202310214703 A CN202310214703 A CN 202310214703A CN 116093191 A CN116093191 A CN 116093191A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
The invention discloses a solar cell and a photovoltaic module, wherein the solar cell comprises: a silicon substrate and a first electrode; one surface of the silicon substrate is sequentially laminated with a tunneling oxide layer, a doped conductive layer and a first passivation layer along the direction away from the silicon substrate; the first electrode penetrates through the first passivation layer and is electrically connected with the doped conductive layer; the doping concentration of the doped conductive layer gradually decreases from the first electrode to the symmetry axis of the adjacent two first electrodes. The doping concentration of the doped conductive layer is reduced from the first electrode to the symmetry axis of two adjacent first electrodes by (1.7-17) multiplied by 10 per millimeter 19 cm ‑3 The method comprises the steps of carrying out a first treatment on the surface of the The thickness of the doped conductive layer is unchanged from the first electrode to the symmetry axis of the two adjacent first electrodes, but the total doping concentration is gradually reduced, the optical loss of the doped conductive layer is reduced,and meanwhile, the transverse transmission loss of current is reduced, so that the front battery efficiency and the battery double-sided rate are improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a solar cell and a photovoltaic module.
Background
TOPCon (Tunnel OxidePassivated Contact) is a tunneling oxide passivation contact solar cell technology based on a selective carrier principle, the cell structure is an N-type silicon substrate cell, an ultrathin silicon oxide layer is prepared on the back of the cell, then a doped silicon thin layer is deposited, the ultrathin silicon oxide layer and the doped silicon thin layer form a passivation contact structure together, surface recombination and metal contact recombination are effectively reduced, and a larger space is provided for further improving the conversion efficiency of the cell.
The doped conductive layer in the TOPCON battery has light absorption capacity, so that certain optical loss and reduction of the efficiency of the front battery can be caused, sunlight mainly reaches a long-wave-band spectrum after reaching the back, and the doped conductive layer at the back can absorb the long-wave-band spectrum, so that short-circuit current loss and reduction of the efficiency of the front battery are caused; on one hand, the higher the absorption coefficient, the stronger the absorption capacity due to the difference of the absorption capacities of the doped conductive layers; on the other hand, the longer the absorption optical path is, the more absorption is, and meanwhile, the doped conductive layer has the light absorption capability, so that the efficiency of the back battery is also reduced, namely the double-sided rate of the battery is reduced, and the double-sided power generation power is reduced when the battery is used for a double-sided power generation function; in order to reduce optical loss caused by light absorption of the doped conductive layer and improve short-circuit current and battery efficiency, a method of reducing the thickness of the doped conductive layer is generally adopted, and the light absorption capacity is reduced by reducing the absorption optical path, however, as the thickness of the doped conductive layer is reduced, the square resistance is increased, the transverse transmission capacity of current is reduced, the filling factor of the battery is reduced, and the battery efficiency is affected.
Disclosure of Invention
In view of this, the present invention provides a solar cell and a photovoltaic module that reduces optical loss of a doped conductive layer while reducing lateral transmission loss of current, thereby improving front cell efficiency and cell bifacial rate.
The invention provides a solar cell, comprising: a silicon substrate and a first electrode;
one surface of the silicon substrate is sequentially laminated with a tunneling oxide layer, a doped conductive layer and a first passivation layer along the direction away from the silicon substrate; the first electrode penetrates through the first passivation layer and is electrically connected with the doped conductive layer; the doping concentration of the doped conductive layer gradually decreases from the first electrode to the symmetry axis of the adjacent two first electrodes.
Optionally, the doping concentration of the doped conductive layer is reduced from the first electrode to the symmetry axis of two adjacent first electrodes by (1.7-17) ×10 per millimeter 19 cm -3 。
Optionally, the doping concentration of the doped conductive layer at the first electrode is in a range of (1-10) x 10 20 cm -3 。
Optionally, the doping concentration of the doped conductive layer at the symmetrical axes of the adjacent two first electrodes ranges from (1 to 10) x 10 19 cm -3 。
Optionally, the thickness range of the doped conductive layer along the direction perpendicular to the silicon substrate is 10 nm-300 nm.
Optionally, a diffusion doping layer is further arranged between the silicon substrate and the tunneling oxide layer, and the doping concentration in the diffusion doping layer far away from the silicon substrate is greater than the doping concentration in the diffusion doping layer near the silicon substrate.
Optionally, the doping concentration in the diffusion doping layer gradually decreases from the side far from the silicon substrate to the side close to the silicon substrate.
Optionally, the doping concentration in the diffusion doped layer at the side far away from the silicon substrate is in the range of 10 17 cm -3 ~10 21 cm -3 。
Optionally, the doping concentration in the diffusion doped layer near the side of the silicon substrate is in the range of 10 17 cm -3 ~10 19 cm -3 。
Optionally, the thickness range of the diffusion doped layer along the direction perpendicular to the silicon substrate is 40 nm-200 nm.
Optionally, the silicon substrate comprises a base region and an emitter positioned on the surface of the base region at the side far away from the diffusion doping layer; the emitter is sequentially provided with a second passivation layer and an antireflection layer in a lamination manner along the direction away from the base region; and the second electrode sequentially penetrates through the anti-reflection layer and the second passivation layer to be electrically connected with the emitter.
The invention provides a photovoltaic module, which comprises a front cover plate, a first packaging adhesive film, a battery string, a second packaging adhesive film and a back cover plate which are arranged in a laminated manner; the battery string is formed by connecting a plurality of solar cells according to any one of the above.
Compared with the prior art, the solar cell and the photovoltaic module provided by the invention have the beneficial effects that at least the following are realized:
according to the solar cell and the photovoltaic module provided by the invention, the thickness of the doped conductive layer is unchanged from the first electrode to the symmetrical axis of the two adjacent first electrodes, but the total doping concentration is gradually reduced, so that the optical loss of the doped conductive layer is reduced, and meanwhile, the transverse transmission loss of current is reduced, thereby improving the front-side cell efficiency and the cell double-side rate.
Of course, it is not necessary for any one product embodying the invention to achieve all of the technical effects described above at the same time.
Other features of the present invention and its advantages will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic structural diagram of a solar cell according to the present embodiment;
fig. 2 is a flowchart of a method for manufacturing a solar cell according to the present embodiment;
fig. 3 is a schematic structural diagram of a photovoltaic module according to the present embodiment;
fig. 4 is a schematic structural diagram of another photovoltaic module according to the present embodiment.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless it is specifically stated otherwise.
The following description of at least one exemplary embodiment is merely exemplary in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any specific values should be construed as merely illustrative, and not a limitation. Thus, other examples of exemplary embodiments may have different values.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further discussion thereof is necessary in subsequent figures.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a solar cell according to the present embodiment; the solar cell 18 provided in this embodiment includes: a silicon substrate 1 and a first electrode 2;
one surface of the silicon substrate 1 is sequentially laminated with a tunneling oxide layer 3, a doped conductive layer 4 and a first passivation layer 5 along the direction away from the silicon substrate 1; the first electrode 2 penetrates through the first passivation layer 5 and is electrically connected with the doped conductive layer 4; the doping concentration of the doped conductive layer 4 gradually decreases from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2;
the silicon substrate 1 includes: a base region 11 and an emitter 12 on the surface of the base region 11 on the side remote from the diffusion doping layer 7; the emitter 12 is sequentially provided with a second passivation layer 8 and an antireflection layer 9 in a lamination manner along the direction away from the base region 11; the second electrode 10 is electrically connected to the emitter 12 through the antireflection layer 9 and the second passivation layer 8 in this order.
In the above scheme, the front surface of the silicon substrate 1 facing the sun is a light receiving surface, and the surface of the back surface of the silicon substrate 1 facing away from the sun is a backlight surface; the silicon substrate 1 may be an N-type silicon substrate 1, specifically may be one of a polysilicon substrate, a monocrystalline silicon substrate, a microcrystalline silicon substrate or a silicon carbide substrate, and the specific type of the silicon substrate 1 is not limited in this embodiment; the doping element of the silicon substrate 1 may be a group v element such as phosphorus, arsenic, antimony, etc.; the thickness of the silicon substrate 1 in the direction perpendicular to the silicon substrate 1 may be 60 μm to 240 μm, specifically 60 μm, 80 μm, 90 μm, 100 μm, 120 μm, 150 μm, 200 μm or 240 μm, and is not limited herein.
The tunneling oxide layer 3 may be an ultra-thin oxide layer; for example, it may be silicon oxide or a metal oxide, and may contain other additional elements, such as nitrogen; the thickness of the silicon oxide (SiOx) layer along the direction vertical to the silicon substrate 1 is generally 1-2 nm, and the silicon oxide (SiOx) layer is mainly used as a tunneling layer of majority carriers, and meanwhile, the surface of the silicon wafer is chemically passivated, so that the interface state is reduced; illustratively, the tunneling oxide layer 3 may be one or more stacked structures of a silicon oxide layer, an aluminum oxide layer, a silicon oxynitride layer, a molybdenum oxide layer, a hafnium oxide layer; in other embodiments, the tunnel oxide layer 3 may be a silicon oxynitride layer, a silicon oxycarbide layer, or the like.
The doped conductive layer 4 comprises at least one of silicon carbide and polysilicon, namely the doped conductive layer 4 can be a doped polysilicon layer, a silicon carbide layer, or a composite layer of the doped polysilicon layer and the silicon carbide layer; when the Doped conductive layer 4 is Doped polysilicon (Doped poly-Si), the main function is to be used as a field passivation layer, and energy band bending is formed on the surface of the silicon wafer, so that the selective transmission of carriers is realized, and the recombination loss is reduced; in the coverage area of the metal electrode of the back silicon oxide/doped polysilicon, the metal electrode penetrates through the first passivation layer 5 to be in contact with the doped polysilicon, but does not penetrate through the silicon oxide; the metal electrode is in contact with the doped polysilicon to realize electrical connection, and the metal electrode does not penetrate through the silicon oxide so as to keep good interface passivation; in the coverage area of the nonmetallic electrode, the compound current on the surface of the silicon substrate 1 can reach a very low level; the first passivation layer 5 generally employs silicon nitride (SiNx) as a hydrogen passivation layer and an optical matching layer.
The second passivation layer 8 may include, but is not limited to, at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc. or any combination thereof, and the second passivation layer 8 can generate a good passivation effect on the silicon substrate 1, which helps to improve the conversion efficiency of the battery; it should be noted that the second passivation layer 8 may also function to reduce reflection of incident light; the thickness of the second passivation layer 8 along the direction perpendicular to the silicon substrate 1 may be in the range of 10nm to 120nm, specifically 10nm, 20nm, 30nm, 42nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm or 120nm, or the like, but may be other values within the above range, and is not limited thereto.
The first passivation layer 5 may include, but is not limited to, at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc., or any combination thereof; the thickness of the first passivation layer 5 along the direction perpendicular to the silicon substrate 1 may be 70nm to 120nm, specifically 70nm, 80nm, 90nm, 100nm or 120nm, or the like, but may be any other value within the above range, and is not limited thereto.
The first electrode 2 and the second electrode 10 are metal gate line electrodes, and the metal gate line electrodes are made of at least one of copper, silver, aluminum and nickel; the metal gate line electrode includes: the main grid line is connected with the auxiliary grid line, the auxiliary grid line is used for converging current generated by the solar cell, and the main grid line is used for collecting current on the auxiliary grid line; as an optional technical scheme of the embodiment, the plurality of main grid lines are distributed at equal intervals, so that the current collected by each main grid line is more uniform.
In order to form a good ohmic contact with the metal, the metal region requires a higher doping concentration; but in non-metallic areas lower light absorption properties are required; for example, doping elements in doped polysilicon affect its light absorption capacity, and the higher the doping concentration of the element, the stronger the light absorption capacity and the lower the current, so the non-gate line region needs a relatively lower doping concentration; the present embodiment proposes a design in which the doping concentration of the doped conductive layer 4 gradually decreases from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2; the thickness of the doped conductive layer 4 along the direction vertical to the silicon substrate 1 is unchanged, but the doping concentration is gradually reduced, the light absorption capacity is gradually decreased, compared with the doped conductive layer 4 uniformly doped with the same thickness in the prior art, the total light absorption capacity of the doped conductive layer 4 is reduced, the light absorption loss of the doped conductive layer 4 is greatly reduced in a combined way, the back current is increased, and the overall current of the battery is increased; the doping concentration from the symmetrical axis 6 of the two adjacent first electrodes 2 to the first electrodes 2 gradually increases, the regional transverse transmission resistance correspondingly gradually decreases, the transverse transmission of photo-generated carriers is facilitated, the transverse transmission of current is facilitated, the current gradually increases, the current density gradually increases, the front efficiency of the battery is improved, and the double-sided rate of the battery is improved; the cell double-sided ratio is the ratio of the cell back-side efficiency to the cell front-side efficiency.
According to the embodiment, the solar cell provided by the embodiment at least has the following beneficial effects:
in the solar cell provided in this embodiment, the thickness of the doped conductive layer 4 is unchanged from the first electrode 2 to the symmetry axis 6 of two adjacent first electrodes 2, but the total doping concentration is gradually reduced, so that the optical loss of the doped conductive layer 4 is reduced, and meanwhile, the lateral transmission loss of current is reduced, thereby improving the front cell efficiency and the cell double-sided rate.
In some alternative embodiments, with continued reference to fig. 1, the doping concentration of the doped conductive layer 4 may decrease uniformly based on distance from the first electrode 2 to the symmetry axis 6 of two adjacent first electrodes 2; that is, the doped conductive layer 4 can be reduced by the same doping concentration every the same distance from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2; for example, the doping concentration of the doped conductive layer 4 is reduced by (1.7-17) ×10 per mm from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2 19 cm -3 . The doping concentration of the doped conductive layer 4 can also decrease from the first electrode 2 to the symmetry axis 6 of two adjacent first electrodes 2 based on non-uniform distance; that is, the doped conductive layer 4 can reduce different doping concentrations from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2 at the same distance; for example, the number of the cells to be processed,the doping concentration of the doped conductive layer 4 may decrease exponentially per millimeter from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2.
In particular, if the doping concentration of the doped conductive layer 4 decreases by less than 1.7X10 per mm from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2 19 cm -3 The doping concentration at the symmetrical axis 6 of the two adjacent first electrodes 2 is too high, the light absorption capacity is strong, and the current is reduced; if the doping concentration of the doped conductive layer 4 is reduced by more than 17 x 10 per mm from the first electrode 2 to the symmetry axis 6 of two adjacent first electrodes 2 19 cm -3 The doping concentration at the symmetrical axis 6 of the two adjacent first electrodes 2 is too low, the transverse transmission capability is weakened, the current density is poor, and the battery performance is affected; therefore, the doping concentration of the doped conductive layer 4 is reduced by (1.7-17) ×10 per mm from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2 19 cm -3 The light absorption capacity can be reduced, the current can be improved, the transverse transmission capacity and the current density can be improved, and the battery performance can be improved; alternatively, the doping concentration of the doped conductive layer 4 may be reduced by 1.7x10 per mm from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2 19 cm -3 、4×10 19 cm -3 、8×10 19 cm -3 、10×10 19 cm -3 、15×10 19 cm -3 And 17X 10 19 cm -3 。
In some alternative embodiments, with continued reference to FIG. 1, the doped conductive layer 4 has a doping concentration in the range of (1-10) x 10 at the first electrode 2 20 cm -3 。
Specifically, if the doping concentration of the doped conductive layer 4 at the first electrode 2 is greater than 10×10 20 cm -3 The doping concentration is too high, auger recombination is increased, and passivation performance is reduced; if the doping concentration of the doped conductive layer 4 at the first electrode 2 is less than 1×10 20 cm -3 The doping concentration is too low, the field passivation effect is not achieved, meanwhile, the contact with the metallization is poor, and the filling factor is reduced; thus, the doping of the doped conductive layer 4 at the first electrode 2 is concentratedThe degree range is (1-10) multiplied by 10 20 cm -3 The Auger recombination can be reduced, the passivation effect is ensured, the contact with the metallization can be improved, and the filling factor is improved; alternatively, the doping concentration of the doped conductive layer 4 at the first electrode 2 may be 1×10 20 cm -3 、3×10 20 cm -3 、5×10 20 cm -3 、8×10 20 cm -3 And 10X 10 20 cm -3 。
In some alternative embodiments, with continued reference to FIG. 1, the doping concentration of the doped conductive layer 4 at the symmetry axis 6 of two adjacent first electrodes 2 is in the range of (1-10) x 10 19 cm -3 。
In particular, if the doping concentration of the doped conductive layer 4 at the symmetry axis 6 of two adjacent first electrodes 2 is greater than 10×10 19 cm -3 The doping concentration is too high, auger recombination is increased, and passivation performance is reduced; if the doping concentration of the doped conductive layer 4 at the symmetry axis 6 of the adjacent two first electrodes 2 is less than 1×10 19 cm -3 The doping concentration is too low, the field passivation effect is not achieved, meanwhile, the contact with the metallization is poor, and the filling factor is reduced; therefore, the doping concentration of the doped conductive layer 4 at the symmetry axis 6 of the adjacent two first electrodes 2 is in the range of (1-10) ×10 19 cm -3 The Auger recombination can be reduced, the passivation effect is ensured, the contact with the metallization can be improved, and the filling factor is improved; alternatively, the doping concentration of the doped conductive layer 4 at the symmetry axis 6 of the adjacent two first electrodes 2 may be 1×10 19 cm -3 、3×10 19 cm -3 、5×10 19 cm -3 、8×10 19 cm -3 And 10X 10 19 cm -3 。
In some alternative embodiments, with continued reference to fig. 1, the doped conductive layer 4 has a thickness in the range of 10nm to 300nm in the direction perpendicular to the silicon substrate 1.
Specifically, if the thickness of the doped conductive layer 4 along the direction perpendicular to the silicon substrate 1 is greater than 300nm, the light absorption capacity is too strong, resulting in a decrease in current; if the thickness of the doped conductive layer 4 along the direction vertical to the silicon substrate 1 is smaller than 10nm, the passivation performance is reduced, and meanwhile, the requirement on metallization is too high, so that mass production is difficult to realize; therefore, the thickness range of the doped conductive layer 4 along the direction vertical to the silicon substrate 1 is 10 nm-300 nm, so that the excessively strong light absorption capacity can be avoided, the current reduction can be avoided, the passivation performance can be improved, the metallization requirement is reduced, and the mass production is easy to realize; alternatively, the thickness of the doped conductive layer 4 in the direction perpendicular to the silicon substrate 1 may be 10nm, 100nm, 150nm, 200nm and 300nm.
In some alternative embodiments, as shown in fig. 1, a diffusion doped layer 7 is further disposed between the silicon substrate 1 and the tunnel oxide layer 3, and the doping concentration in the diffusion doped layer 7 on the side far from the silicon substrate 1 is greater than the doping concentration in the diffusion doped layer 7 on the side near the silicon substrate 1.
Specifically, the doping concentration in the diffusion doping layer 7 gradually decreases from the side away from the silicon substrate 1 to the side close to the silicon substrate 1; the doping concentration of the diffusion doped layer 7 is reduced from the side far away from the silicon substrate 1 to the doping concentration near the silicon substrate 1, an electric field is formed between the high doping and the low doping, the field passivation effect is achieved, and the passivation performance is improved.
In some alternative embodiments, continuing to refer to FIG. 1, the doping concentration in the diffusion doped layer 7 on the side away from the silicon substrate 1 is in the range of 10 17 cm -3 ~10 21 cm -3 。
Specifically, if the doping concentration in the diffusion doped layer 7 on the side far from the silicon substrate 1 is more than 10 21 cm -3 The doping amount of the diffusion doping layer 7 is too high, which means that the effect of the tunneling oxide layer 3 is poor and the passivation performance is reduced; if the doping concentration in the diffusion doped layer 7 on the side far from the silicon substrate 1 is less than 10 17 cm -3 The doping amount of the diffusion doping layer 7 is too low, the metal contact performance is deteriorated, and the filling factor is deteriorated; therefore, the doping concentration range in the diffusion doped layer 7 on the side far from the silicon substrate 1 is 10 17 cm -3 ~10 21 cm -3 The effect and passivation performance of the tunneling oxide layer 3 can be ensured, and the metal contact performance and the filling factor can be improved; alternatively, the doping concentration in the diffusion doped layer 7 on the side remote from the silicon substrate 1 may be 10 17 cm -3 、10 18 cm -3 、10 19 cm -3 、10 20 cm -3 And 10 21 cm -3 。
In some alternative embodiments, continuing to refer to FIG. 1, the doping concentration in the diffusion doped layer 7 near the side of the silicon substrate 1 is in the range of 10 17 cm -3 ~10 19 cm -3 。
Specifically, if the doping concentration in the diffusion doped layer 7 near the side of the silicon substrate 1 is greater than 10 19 cm -3 The doping amount of the diffusion doping layer 7 is too high, which means that the effect of the tunneling oxide layer 3 is poor and the passivation performance is reduced; if the doping concentration in the diffusion doped layer 7 near the side of the silicon substrate 1 is less than 10 17 cm -3 The doping amount of the diffusion doping layer 7 is too low, the metal contact performance is deteriorated, and the filling factor is deteriorated; therefore, the doping concentration range in the diffusion doped layer 7 on the side close to the silicon substrate 1 is 10 17 cm -3 ~10 19 cm -3 The effect and passivation performance of the tunneling oxide layer 3 can be ensured, and the metal contact performance and the filling factor can be improved; alternatively, the doping concentration in the diffusion doped layer 7 near the side of the silicon substrate 1 may be 10 17 cm -3 、10 18 cm -3 And 10 19 cm -3 . In some alternative embodiments, with continued reference to fig. 1, the thickness of the diffusion doped layer 7 along the direction perpendicular to the silicon substrate 1 ranges from 40nm to 200nm.
Specifically, the thickness of the diffusion doped layer 7 along the direction perpendicular to the silicon substrate 1 is the doping depth of the doping element in the silicon substrate 1; if the thickness of the diffusion doped layer 7 along the direction vertical to the silicon substrate 1 is larger than 200nm, the thickness is too large, the doping amount in the silicon substrate 1 is too high, and the passivation effect is poor; if the thickness of the diffusion doped layer 7 along the direction vertical to the silicon substrate 1 is smaller than 40nm, the thickness is too small, the doping amount is too low, and the metal contact is poor; therefore, the thickness range of the diffusion doped layer 7 along the direction vertical to the silicon substrate 1 is 40 nm-200 nm, so that the doping amount in the silicon substrate can be ensured to be proper, and the passivation effect and the metal contact effect are improved; alternatively, the thickness of the diffusion doped layer 7 in the direction perpendicular to the silicon substrate 1 may be 40nm, 80nm, 100nm, 150nm, 180nm and 200nm.
Referring to fig. 2, fig. 2 is a flowchart of a method for manufacturing a solar cell according to the present embodiment; the present embodiment also provides a method for manufacturing a solar cell, which may be used to manufacture an N-type solar cell, and further may be used to manufacture an N-type TOPCon cell, and the method for manufacturing an N-type TOPCon cell according to the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, where the described embodiments are only some embodiments, but not all embodiments of the present invention.
Step S100, forming an emitter 12 on the front surface of the silicon substrate 1 after flocking;
specifically, the silicon substrate 1 is an N-type silicon substrate 1, the silicon substrate 1 may be one of a polysilicon substrate, a monocrystalline silicon substrate, a microcrystalline silicon substrate or a silicon carbide substrate, and the specific type of the silicon substrate 1 is not limited in this embodiment; the doping element of the silicon substrate 1 may be a group V element such as phosphorus, arsenic, tellurium, etc.; in some other embodiments, the front and rear surfaces of the silicon substrate 1 may also be textured to form a texture or surface texture, such as a pyramid structure; the manner of the texturing treatment can be chemical etching, laser etching, mechanical method, plasma etching and the like, and is not limited herein; illustratively, the front and rear surfaces of the silicon substrate 1 may be textured with NaOH solution, and a pyramidal textured structure may be prepared due to the anisotropy of the NaOH solution corrosion; it can be understood that the surface of the silicon substrate 1 is provided with a suede structure through the texturing treatment, so that a light trapping effect is generated, and the light absorption quantity of the solar cell is increased, so that the conversion efficiency of the solar cell is improved.
In some embodiments, a step of cleaning the N-type silicon substrate 1 to remove metal and organic contaminants from the surface may be further included before the texturing process.
In some other embodiments, the emitter 12 may be formed on the front side of the silicon substrate 1 by any one or more of high temperature diffusion, slurry doping, or ion implantation; specifically, the emitter 12 is formed by diffusing boron atoms through a boron source; emitter 12 is designed as a selective emitter structure; the boron source may be, for example, boron tribromide for diffusion treatment so that the microcrystalline silicon phase of crystalline silicon is converted to the polycrystalline silicon phase; due to the relatively high concentration of boron on the surface of the silicon substrate 1, a borosilicate glass layer (BSG) is usually formed, which has a metal gettering effect and affects the normal operation of the solar cell, requiring subsequent removal.
In step S200, a tunneling oxide layer 3 and a conductive layer are formed on the back surface of the silicon substrate 1, and doping treatment and local laser treatment are performed on the conductive layer to form a doped conductive layer 4.
Specifically, a tunneling oxide layer 3 may be formed on the back surface of the silicon substrate 1, and then a doped polysilicon layer may be formed on the surface of the tunneling oxide layer 3; the laser processing mode of the doped polysilicon layer is a structure that the laser energy gradually decreases from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2, so as to realize the decrease of the doping concentration from the first electrode 2 to the symmetry axis 6 of the adjacent two first electrodes 2.
The embodiment is not limited to a specific operation mode for forming the oxide layer; illustratively, the rear surface of the silicon substrate 1 may be oxidized by any one of an ozone oxidation method, a high-temperature thermal oxidation method, and a nitric acid oxidation method; the embodiment is not limited to a specific operation manner of forming the conductive layer; by way of example, a conductive layer can be deposited on the surface of the tunneling layer by any one of low-pressure chemical vapor deposition, plasma enhanced chemical vapor deposition and normal-pressure chemical vapor deposition to protect the oxide layer, and then the conductive layer is doped to form a high-low junction (n/n+ -Si), so that the recombination rate of carriers on the back surface of the cell can be effectively reduced, and the conversion efficiency of the solar cell can be further improved.
In some embodiments, the doped conductive layer 4 may be formed by performing an in-situ doping process while depositing the conductive layer, where the doped conductive layer 4 includes at least one of silicon carbide and polysilicon, i.e., the doped conductive layer 4 may be a doped polysilicon layer, a silicon carbide layer, or a composite of a doped polysilicon layer and a silicon carbide layer.
When the doped conductive layer 4 is a phosphorus doped polysilicon layer, the phosphorus doping source can be diffused at high temperature and the slurryAny one or more methods of doping or ion implantation; the doping sources of the local laser treatment are phosphorus silicon glass doped on the surface of the polysilicon layer and phosphorus which is not activated in the polysilicon layer, and the phosphorus is activated in a laser mode to form a heavily doped polysilicon layer with higher phosphorus concentration; the laser light of the local laser treatment includes green light with a wavelength of 532nm, but can also be laser light with other wavelength ranges, and the laser light is not limited herein; the pulse width of the local laser treatment is 15 ns-40 ns, specifically, the pulse width of the local laser treatment can be 15ns, 18ns, 20ns, 25ns, 26ns, 29ns, 30ns, 32ns, 35ns and 40ns; the laser frequency of the local laser treatment is 100 KHz-400 KHz, specifically, the laser frequency of the local laser treatment can be, for example, 100KHz, 150KHz, 200KHz, 250KHz, 300KHz, 350KHz and 400KHz; the integrated laser energy of the local laser treatment is 0.1 J.cm -2 ~0.2J·cm -2 Specifically, the integrated laser energy of the partial laser treatment may be, for example, 0.1 J.cm -2 、0.13J·cm -2 、0.15J·cm -2 、0.18J·cm -2 And 0.2 J.cm -2 。
In step S300, a first passivation layer 5 is formed on the surface of the doped conductive layer 4 and a second passivation layer 8 and an anti-reflection layer 9 are formed on the surface of the emitter 12.
Specifically, a first passivation layer 5 is formed on the surface of the doped conductive layer 4; the first passivation layer 5 may include, but is not limited to, at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc., or any combination thereof; for example, the first passivation layer 5 is composed of silicon nitride, and the silicon nitride film layer may function as an antireflection film, and has good insulation, compactness, stability and masking ability to impurity ions, and the silicon nitride film layer may passivate the silicon substrate 1, significantly improving the photoelectric conversion efficiency of the solar cell.
The thickness of the first passivation layer 5 along the direction perpendicular to the silicon substrate 1 ranges from 70nm to 120nm, and the thickness of the first passivation layer 5 along the direction perpendicular to the silicon substrate 1 may specifically be 70nm, 80nm, 90nm, 100nm or 120nm, or the like, but may also be other values within the above range, which is not limited herein; when the first passivation layer 5 is a stacked silicon nitride layer and silicon oxide layer or a stacked silicon nitride layer and silicon oxynitride layer, the silicon nitride layer is located on the surface of the doped conductive layer 4, and the silicon oxide layer or the silicon oxynitride layer is located on the surface of the silicon nitride layer.
The second passivation layer 8 may include, but is not limited to, at least one of silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, etc., or any combination thereof; the second passivation layer 8 can generate a good passivation effect on the silicon substrate 1, and is helpful for improving the conversion efficiency of the battery; it should be noted that the second passivation layer 8 may also function to reduce reflection of incident light; the thickness of the second passivation layer 8 along the direction perpendicular to the silicon substrate 1 ranges from 10nm to 120nm, and the thickness of the second passivation layer 8 along the direction perpendicular to the silicon substrate 1 may specifically be 10nm, 20nm, 30nm, 42nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 120nm, or the like, but may be other values within the above range, and is not limited thereto.
In step S400, the first electrode 2 penetrating the first passivation layer 5 and making contact with the doped polysilicon layer and the second electrode 10 penetrating the surface of the second passivation layer 8 and making contact with the emitter 12 are formed.
Specifically, a front main grid and a front auxiliary grid are printed on the front of a silicon substrate 1 by using slurry, and are dried to form a corresponding second electrode 10, a back main grid and a back auxiliary grid are printed on the back of the silicon substrate 1 by using slurry, and are dried to form a corresponding first electrode 2, and finally, the dried battery piece is sintered to obtain a solar cell; the specific materials of the second electrode 10 and the first electrode 2 are not limited in this embodiment; for example, the second electrode 10 is a silver electrode or a silver/aluminum electrode, and the first electrode 2 is a silver electrode or a silver/aluminum electrode.
It should be noted that, unless otherwise indicated, in the present application, each operation step may be performed sequentially or may not be performed sequentially; the order of steps for preparing the solar cell is not limited in this embodiment, and may be adjusted according to the actual production process.
Referring to fig. 3, fig. 3 is a schematic structural diagram of a photovoltaic module according to the present embodiment; the photovoltaic module provided by the embodiment comprises a front cover plate 13, a first packaging adhesive film 14, a battery string 15, a second packaging adhesive film 16 and a back cover plate 17 which are arranged in a laminated manner; the cell string 15 is formed by connecting a plurality of solar cells 18 according to any of the above embodiments.
Specifically, the photovoltaic module comprises a front cover plate 13, a first packaging adhesive film 14, a battery string 15, a second packaging adhesive film 16 and a back cover plate 17 which are arranged in a laminated manner; the cell string comprises a plurality of solar cells 18 as described above connected by conductive strips (not shown), and the solar cells 18 may be connected by partial lamination or splicing; that is, the TOPCon battery is electrically connected in a whole or multiple-piece form to form a plurality of battery strings 15, and the plurality of battery strings 15 are electrically connected in series and/or parallel.
The front cover plate 13 can be made of glass, has higher light transmittance, the light transmittance can reach more than 92%, low-iron toughened embossed glass is generally adopted, the thickness range of the front cover plate 13 along the direction vertical to the silicon substrate 1 can be 2.7 mm-3.2 mm, the thickness of the front cover plate 13 along the direction vertical to the silicon substrate 1 can be 2.7mm, 3mm, 3.1mm or 3.2mm, the thickness of the front cover plate 13 can be set according to practical conditions, and the embodiment is not particularly limited to the above; the light transmittance can reach more than 91% within the wavelength range of 380 nm-1100 nm of the spectral response of the solar cell, and the solar cell has higher reflectivity for infrared light with the wavelength of 1200 nm; the front cover 13 may be a conventional planar glass, and the shape of the front cover 13 is not limited in this embodiment, and may be square, circular or other shapes, as long as the purpose of this embodiment can be achieved; of course, the front cover 13 may be a glass with a special shape, such as a curved glass, and the curved angle corresponding to the curved glass is not limited any more in this embodiment, and may be set according to practical situations, and may be 5 degrees, 10 degrees, 15 degrees, 20 degrees, or other degrees, and it is understood that the back cover 17 may be identical to or different from the front cover 13.
The back cover plate 17 can be made of glass materials, TPT (polyvinyl fluoride composite film) or TPE (thermoplastic elastomer), and the back cover plate 17 is used for protecting internal packaging materials and batteries from mechanical damage and corrosion of external environment, has good insulating property, determines the service life of the assembly to a great extent, and has excellent weather resistance, low water vapor permeability, good electrical insulation and certain bonding strength; the thickness of the back cover 17 in the direction perpendicular to the silicon substrate 1 may range from 0.2mm to 3.2mm, and the thickness of the back cover 17 in the direction perpendicular to the silicon substrate 1 may range from 0.2mm, 1mm, 2mm, 3mm, or 3.2mm.
Two sides of the first packaging adhesive film 14 are respectively contacted and attached with the front cover plate 13 and the battery string 15, and two sides of the second packaging adhesive film 16 are respectively contacted and attached with the back cover plate 17 and the battery string 15; the first packaging adhesive film 14 and the second packaging adhesive film 16 may be an ethylene-vinyl acetate copolymer (EVA) adhesive film, a polyethylene octene co-elastomer (POE) adhesive film, or a polyethylene terephthalate (PET) adhesive film, respectively. EVA (ethylene-vinyl acetate copolymer) has the advantages of excellent adhesive property, low melting temperature, good melt fluidity and softness, lower cost, convenient construction and the like. The EVA material is characterized in that a vinyl acetate monomer is introduced into a molecular chain, so that the high crystallinity can be reduced, and the toughness, the impact resistance, the filler compatibility and the heat sealing performance are improved; POE (random copolymer elastomer of ethylene and higher alpha-olefins); the molecular structure of POE material makes it have excellent mechanical property, rheological property and uvioresistant property, and also has the characteristics of good affinity with polyolefin, good low temperature toughness, high cost performance and the like; PVB (polyvinyl alcohol Ding Quanzhi) material, PVB material is soluble in methanol, ethanol, ketone, halogenated alkyl and aromatic hydrocarbon solvents, has good compatibility with phthalate, sebacate benzene plasticizers, nitrocellulose, phenolic resin, epoxy resin and the like, has higher transparency, cold resistance, impact resistance and ultraviolet radiation resistance, and has good binding force with metal, glass, wood, ceramics, fiber products and the like.
The photovoltaic module may also be packaged with a side edge fully enclosed, that is, the side edge of the photovoltaic module is fully encapsulated with an encapsulation tape (not shown in the figure), so as to prevent the phenomenon of lamination offset of the photovoltaic module in the lamination process. The photovoltaic module further comprises a sealing component (not shown in the figure) which is fixedly packaged at part of the edge of the photovoltaic module; the edge sealing component can fixedly encapsulate edges of the photovoltaic module near corners. The edge sealing component can be a high-temperature-resistant adhesive tape, has excellent high-temperature resistance, can not be decomposed or fall off in the lamination process, and can ensure reliable packaging of the photovoltaic module; wherein, two ends of the high temperature resistant adhesive tape are respectively fixed on the back cover plate 17 and the front cover plate 13; the two ends of the high-temperature-resistant adhesive tape can be respectively adhered to the back cover plate 17 and the front cover plate 13, and the limit of the side edges of the photovoltaic module can be realized in the middle of the high-temperature-resistant adhesive tape, so that the photovoltaic module is prevented from generating lamination offset in the lamination process.
Referring to fig. 4, fig. 4 is a schematic structural diagram of another photovoltaic module according to the present embodiment; the photovoltaic module further comprises a frame 19, wherein the frame 19 can be made of aluminum alloy materials or stainless steel materials; when the frame 19 is made of aluminum alloy materials, the strength and corrosion resistance of the frame 19 are very good, and the frame 19 can play a role in supporting and protecting the whole battery plate; the photovoltaic modules can also be connected to an external photovoltaic support through a frame 19, and a plurality of photovoltaic modules can be connected to each other to form a photovoltaic power station together.
According to the embodiment, the solar cell and the photovoltaic module provided by the invention have the following beneficial effects:
according to the solar cell and the photovoltaic module provided by the invention, the thickness of the doped conductive layer is unchanged from the first electrode to the symmetrical axis of the two adjacent first electrodes, but the total doping concentration is gradually reduced, so that the optical loss of the doped conductive layer is reduced, and meanwhile, the transverse transmission loss of current is reduced, thereby improving the front-side cell efficiency and the cell double-side rate.
While certain specific embodiments of the invention have been described in detail by way of example, it will be appreciated by those skilled in the art that the above examples are for illustration only and are not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (11)
1. A solar cell, comprising: a silicon substrate and a first electrode;
one surface of the silicon substrate is sequentially laminated with a tunneling oxide layer, a doped conductive layer and a first passivation layer along the direction away from the silicon substrate; the first electrode penetrates through the first passivation layer and is electrically connected with the doped conductive layer; the doping concentration of the doped conductive layer gradually decreases from the first electrode to the symmetrical axis of two adjacent first electrodes, and the doping concentration of the doped conductive layer gradually decreases from the first electrode to the symmetrical axis of two adjacent first electrodes by (1.7-17) x 10 per millimeter 19 cm -3 。
2. The solar cell according to claim 1, wherein the doping concentration of the doped conductive layer at the first electrode is in a range of (1-10) ×10 20 cm -3 。
3. The solar cell according to claim 1, wherein the doping concentration of the doped conductive layer at the symmetry axes of the adjacent two first electrodes is in the range of (1-10) ×10 19 cm -3 。
4. The solar cell according to claim 1, wherein the doped conductive layer has a thickness in a direction perpendicular to the silicon substrate in a range of 10nm to 300nm.
5. The solar cell according to claim 1, wherein a diffusion doped layer is further arranged between the silicon substrate and the tunneling oxide layer, and the doping concentration in the diffusion doped layer at a side far from the silicon substrate is greater than the doping concentration in the diffusion doped layer at a side near the silicon substrate.
6. A solar cell according to claim 5, wherein the doping concentration in the diffusion doped layer decreases gradually from the side away from the silicon substrate to the side closer to the silicon substrate.
7. The solar cell according to claim 5, wherein the doping concentration in the diffusion doped layer on the side far from the silicon substrate is in the range of 10 17 cm -3 ~10 21 cm -3 。
8. The solar cell according to claim 5, wherein the doping concentration in the diffusion doped layer near the silicon substrate side is in the range of 10 17 cm -3 ~10 19 cm -3 。
9. The solar cell according to claim 5, wherein the thickness of the diffusion doped layer along the direction perpendicular to the silicon substrate ranges from 40nm to 200nm.
10. A solar cell according to any of claims 5-9, characterized in that the silicon substrate comprises a base region and an emitter at the surface of the base region on the side remote from the diffusion doping layer; the emitter is sequentially provided with a second passivation layer and an antireflection layer in a lamination manner along the direction away from the base region; and the second electrode sequentially penetrates through the anti-reflection layer and the second passivation layer to be electrically connected with the emitter.
11. The photovoltaic module is characterized by comprising a front cover plate, a first packaging adhesive film, a battery string, a second packaging adhesive film and a back cover plate which are arranged in a laminated mode; the battery string is formed by connecting the solar cells of any one of claims 1-10.
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| CN117594669A (en) * | 2024-01-19 | 2024-02-23 | 浙江晶科能源有限公司 | Solar cell, preparation method thereof, laminated cell and photovoltaic module |
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