CN111613687A - Solar cell - Google Patents
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- CN111613687A CN111613687A CN201910137619.XA CN201910137619A CN111613687A CN 111613687 A CN111613687 A CN 111613687A CN 201910137619 A CN201910137619 A CN 201910137619A CN 111613687 A CN111613687 A CN 111613687A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 54
- 239000010703 silicon Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000002161 passivation Methods 0.000 claims abstract description 48
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 13
- 239000002184 metal Substances 0.000 abstract description 13
- 230000006798 recombination Effects 0.000 abstract description 10
- 238000005215 recombination Methods 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000000969 carrier Substances 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 9
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 101100409194 Rattus norvegicus Ppargc1b gene Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The present invention provides a solar cell, comprising: a p-type silicon substrate; the n-type doping layer, the front passivation antireflection film and the front electrode are sequentially arranged from the front to the outside; and a back passivation film and a back electrode disposed outward from the back; a plurality of p-type doping areas are arranged between the back surface of the p-type silicon substrate and the back surface passivation film, and the doping concentration of the p-type doping areas is greater than that of the p-type silicon substrate; the back electrode is in contact with the p-type doped region. According to the solar cell provided by the invention, the p-type doping region with higher doping concentration is doped on the back surface of the p-type silicon substrate, so that the concentration of current carriers is greatly improved, the resistivity of the p-type doping region is reduced, and the current collection capability is improved. Meanwhile, the distance between aluminum-containing electrodes in the back electrode can be increased, so that the contact area between the electrodes and the p-type doped region is reduced, the carrier recombination rate of the metal electrode and the semiconductor contact region is further reduced, and the efficiency of the battery is finally improved.
Description
Technical Field
The invention relates to the technical field of photovoltaic power generation, in particular to a solar cell.
Background
The structure of the perc (passivated emitter and reactor cell) solar cell currently commercialized in the market includes a doped layer on the front surface, a passivation layer and an electrode are prepared on the front surface, a passivation film is arranged on the back surface, and the back electrode is contacted with a silicon substrate through a contact region on the passivation film. In this case, the region where the back metal electrode and the doped layer are in contact causes a significant drop in the battery performance because the recombination rate is extremely high. And because the lateral resistivity of the silicon substrate is high, the current cannot be well collected, and the efficiency of the solar cell is finally influenced.
Disclosure of Invention
In view of this, the present invention provides a solar cell, which aims to solve the problem of low efficiency of the existing solar cell.
In one aspect, the present invention provides a solar cell, comprising: a p-type silicon substrate; the n-type doping layer, the front passivation antireflection film and the front electrode are sequentially arranged from the front side of the p-type silicon substrate to the outside; the back passivation film and the back electrode are sequentially arranged from the back of the p-type silicon substrate to the outside; a plurality of p-type doped regions are arranged between the back surface of the p-type silicon substrate and the back surface passivation film, and the doping concentration of the p-type doped regions is greater than that of the p-type silicon substrate; the back electrode is in contact with the p-type doped region.
Further, in the solar cell, the p-type doped regions are distributed at intervals in the region on the back surface of the p-type silicon substrate.
Further, in the solar cell, the width of each p-type doped region is smaller than the distance between any two adjacent p-type doped regions.
Furthermore, in the solar cell, the p-type doped regions are in a strip structure, and the width of each p-type doped region is 20-300 μm; the distance between the p-type doped regions is 300-2000 μm.
Further, in the solar cell, in the region on the back surface of the p-type silicon substrate, a plurality of p-type doped regions are respectively arranged at intervals along the length direction of the back surface passivation film opening region, and two corresponding p-type doped regions located below different back surface passivation film opening regions are mutually separated.
Further, in the solar cell, the doping concentration of the p-type doped region is 5 × 1018～5×1021Per cm3。
Further, in the solar cell, the n-type doped layer includes a first n-type doped region and a second n-type doped region, and a doping concentration of the second n-type doped region is higher than a doping concentration of the first n-type doped region; and the negative electrode fine grid line of the front electrode is in contact with the second n-type doped region.
Further, in the solar cell, the second n-type doped regions are distributed at intervals in the first n-type doped region.
Further, in the solar cell, the width of each second n-type doped region is smaller than the distance between any two adjacent second n-type doped regions.
Further, in the solar cell, the width of each second n-type doped region is 20-300 μm; the distance between the second n-type doped regions is 300-2000 μm.
Further, in the solar cell, a plurality of second n-type doped regions are respectively arranged on the first n-type doped region at intervals along the length direction of the negative electrode fine grid line, and two corresponding second n-type doped regions located below different negative electrode fine grid lines are mutually separated.
Furthermore, in the solar cell, the second n-type doped regions under the different negative electrode fine grid lines are arranged at equal intervals.
Furthermore, in the solar cell, the second n-type doped regions located below the same negative electrode fine grid line are arranged at equal intervals.
Furthermore, in the solar cell, the negative electrode fine grid line and the second n-type doped region form an included angle.
Further, in the solar cell, the negative electrode fine grid line is perpendicular to the second n-type doped region.
Further, in the solar cell, the second n-type doped regions are in a strip structure, and each second n-type doped region is at least in contact with one section of the negative electrode fine grid line.
Further onIn the solar cell, the doping concentration of the second n-type doped region is 1 × 1020～5×1021Per cm3The doping concentration of the first n-type doped region is 1 × 1019～5×1020Per cm3。
Further, in the solar cell, the aluminum-containing electrode in the back electrode covers below the back passivation film and is in contact with the p-type silicon substrate through the back passivation film opening region.
Further, in the above solar cell, the aluminum-containing electrodes in the rear surface electrode are arranged at intervals in the rear surface passivation film open region.
Further, in the solar cell, the front passivation antireflection film and the back passivation film are both composed of one or more of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide and silicon carbide.
According to the solar cell, the p-type doping region with higher doping concentration is doped on the back surface of the p-type silicon substrate, so that the concentration of current carriers is greatly improved, the resistivity of the p-type doping region is reduced, and the current collection capability is improved. Meanwhile, the distance between aluminum-containing electrodes in the back electrode can be increased to reduce the contact area between the electrodes and the p-type doped region, and the area ratio of the metal electrode is relatively reduced, so that the carrier recombination rate of the metal electrode and the semiconductor contact region is reduced, and the efficiency of the battery is finally improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a back electrode in an embodiment of the invention;
FIG. 3 is another schematic view of a back electrode in an embodiment of the invention;
FIG. 4 is a schematic diagram of a front electrode in an embodiment of the invention;
FIG. 5 is a schematic view of a partial structure with consistent doping concentration in each region of the n-type doped layer according to an embodiment of the present invention;
FIG. 6 is a schematic view of another embodiment of a local structure with uniform doping concentration in each region of an n-type doped layer;
FIG. 7 is a schematic diagram of a single-sided solar cell according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a solar cell in which the doping concentration of each region in the n-type doped layer is not uniform according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of another solar cell in which the doping concentrations of regions in the n-type doped layer are not the same according to an embodiment of the present invention;
fig. 10 is a partial structural diagram of the front surface of the solar cell after the surface passivation film is omitted in the embodiment of the invention;
FIG. 11 is a schematic structural diagram of a bifacial solar cell in an embodiment of the invention;
FIG. 12 is a schematic view of another embodiment of a bifacial solar cell without a surface passivation film according to the present invention;
fig. 13 is a schematic structural diagram of a double-sided solar cell provided with an aluminum doped layer and a silicon-aluminum doped layer in the embodiment of the present invention.
The solar cell comprises a p-type silicon substrate 1, a first n-type doping region 2, a second n-type doping region 3, a p-type doping region 4, a passivated antireflection film 5, a back passivation film 6, a negative electrode fine grid line 7, a back passivation film opening region 8, an aluminum-containing electrode 9, a positive electrode connecting electrode 10, a negative electrode connecting electrode 11, an aluminum doping layer 12 and a silicon-aluminum alloy layer 13.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
Referring to fig. 1, a solar cell according to an embodiment of the present invention includes: a p-type silicon substrate 1; the n-type doping layer, the front passivation antireflection film and the front electrode are sequentially arranged from the front side of the p-type silicon substrate 1 to the outside; the back passivation film 6 and the back electrode are sequentially arranged from the back of the p-type silicon substrate 1 to the outside; a plurality of p-type doped regions 4 are further arranged between the back surface of the p-type silicon substrate 1 and the back surface passivation film 6, and the doping concentration of the p-type doped regions 4 is greater than that of the p-type silicon substrate; the back electrode is in contact with the p-doped region 4.
Specifically, the p-type doped regions 4 can be in the same plane, the concentration of the p-type doped regions 4 can be kept consistent, and preferably, the doping concentration of the p-type doped region 4 is 5 × 1018～5×1021Per cm3For example 1 × 1020Per cm3、8×1021Per cm3The doping concentration of the p-type silicon substrate can be selected according to actual conditions, for example, the doping concentration of the p-type silicon substrate 1 is 1 × 1015Per cm3、2×1016Per cm3. The doping concentration of the p-type doping region 4 is high, so that the resistivity of the p-type doping region 4 is reduced while the carrier concentration is greatly improved, and the current collection capability is increased; therefore, the pitch of the aluminum-containing electrodes 9 can be appropriately increased, thereby being advantageous in reducing the carrier recombination rate of the metal electrode and the semiconductor contact region.
The element doped in the p-type doped region 4 may be a group III element, such as boron, gallium, etc.; at this time, the p-type silicon substrate 1 and the p-type doped region 4 have the same conductivity type and are both p-type conductivity, the surface of the p-type silicon substrate 1 close to the doped region is used as a surface field, and a corresponding PN junction is formed on the other surface of the p-type silicon substrate 1, so that a complete solar cell is formed.
Referring to fig. 2-3, the back electrode may include: an aluminum-containing electrode 9 and a positive electrode connecting electrode 10. The front passivation antireflection film 5 and the back passivation film 6 may each be made of one or more of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and silicon carbide. The p-type doped region is in contact with the aluminum-containing electrode 9, and may or may not be in contact with the positive electrode connection electrode 10. In this embodiment, the aluminum-containing electrode 9 may be partially or completely in contact with the p-type silicon substrate 1.
Referring to fig. 4, the front electrode may include: a plurality of negative electrode fine grid lines 7 and a negative electrode connecting electrode 11. The number of the negative electrode fine grid lines 7 and the number of the negative electrode connecting electrodes 11 can be determined according to actual conditions, for example, 100 negative electrode fine grid lines 7 and 4 negative electrode connecting electrodes 11 are selected, and the negative electrode connecting electrodes 11 are perpendicular to the negative electrode fine grid lines 7 and are connected at the intersection.
As can be clearly seen from the above description, in the solar cell provided in this embodiment, the p-type doped region with higher doping concentration is doped on the back surface of the p-type silicon substrate, so that the concentration of carriers is greatly increased, and the resistivity of the p-type doped region is also decreased, thereby increasing the current collection capability. Meanwhile, the distance between aluminum-containing electrodes in the back electrode can be increased to reduce the contact area between the electrodes and the p-type doped region, and the area ratio of the metal electrode is relatively reduced, so that the carrier recombination rate of the metal electrode and the semiconductor contact region is reduced, and the efficiency of the battery is finally improved.
Referring to fig. 5 and 8, in the above embodiment, each p-type doped region is spaced apart from the back surface of the p-type silicon substrate.
Specifically, the number of the p-type doped regions 4 may be determined according to actual situations, and the present embodiment does not limit the number. A plurality of p-type doped regions 4 may be disposed at equal intervals in the region of the back surface of the p-type silicon substrate 1 while dividing the region of the back surface of the p-type silicon substrate 1 into a plurality of sub-regions, each sub-region being spaced apart from each p-type doped region 4 in an alternating manner.
Since the high-concentration doped region has a high conductivity but a serious carrier recombination, it is preferable that the width of each p-type doped region 4 is smaller than the interval between any two p-type doped regions 4.
Specifically, the width of each sub-region on the back surface of the p-type silicon substrate 1 may be determined according to the widths of any two adjacent p-type doped regions 4.
In practical applications, the width of each p-type doped region 4 may be 20-300 μm, preferably 100-250 μm, and more preferably 200 μm. For example, the width of each p-type doped region 4 is 20 μm, 100 μm, 200 μm, 300 μm, etc. The distance between the p-type doped regions 4 is 300-2000 μm, preferably 600-1200 μm, and more preferably 800-1000 μm. In the present embodiment, the pitch of each p-type doped region 4 may be 300 μm, 400 μm, 800 μm, 1000 μm, 1200 μm, or the like.
Referring to fig. 6 and 9, in the above embodiment, in the region on the back surface of the p-type silicon substrate 1, a plurality of p-type doped regions 4 are respectively disposed at intervals along the length direction of the back surface passivation film opening region 8, and two corresponding p-type doped regions 4 located below different back surface passivation film opening regions 8 are spaced from each other.
Specifically, a region of the back surface region of the p-type silicon substrate 1, which is in contact with the back surface passivation film opening region 8, may be a tooth-shaped structure, and each p-type doped region 4 may be embedded in a gap between every two tooth-shaped structures in the back surface region of the p-type silicon substrate 1. The distance between two corresponding p-type doped regions 4 below different back passivation film opening regions 8 can be determined according to actual conditions, and during actual design, each p-type doped region 4 embedded in a gap of the back region of the p-type silicon substrate 1 along the length direction of the back passivation film opening region 8 is in contact with an aluminum-containing electrode 9 in a back electrode.
In the above embodiments, the backside passivation film opening region 8 and the p-type doped region 4 form an included angle. That is, the rear passivation film opening region 8 may be disposed to intersect the p-type doped region 4 at an arbitrary angle, but the rear passivation film opening region 8 is disposed to be perpendicular to the p-type doped region 4 in order to ensure good carrier transfer.
Referring to fig. 7-13, in the above embodiments, the n-type doped layer includes a first n-type doped region 2 and a plurality of second n-type doped regions 3, and the doping concentration of the second n-type doped regions 3 is higher than that of the first n-type doped region 2; and the negative electrode fine grid line of the front electrode is in contact with the second n-type doped region 3.
Specifically, the concentration of each first n-type doped region 2 may be maintained to be uniform, and the doping concentration of each second n-type doped region 3 may be maintained to be uniform, wherein the doping concentration of the first n-type doped region 2 may be 1 × 1019～5×1020Per cm3Preferably 1019～2×1020Per cm3Still more preferably 2 × 1019～6×1019Per cm3For example, in practical fabrication, the doping concentration of the first n-type doped region 2 may be 2 × 1019Per cm3、5×1019Per cm3、5×1020Per cm3Etc. the doping concentration of the second n-type doped region 3 may be 1 × 1020～5×1021Per cm3Preferably 5 × 1019～3×1021Per cm3Still more preferably 2 × 1019～6×1020Per cm3For example, in practical fabrication, the doping concentration of the second n-type doped region 3 may be 2 × 1019、1×1020、1×1021Per cm3、5×1021Per cm3And the like.
In this embodiment, the doping concentration refers to the number of atoms of the doping element per cubic centimeter of the doping region. The negative electrode fine grid line 7 can penetrate through the front passivation antireflection film 5 and then contact with the first n-type doped region 2 and the second n-type doped region 3. The distance between every two negative electrode fine grid lines 7 can be 1-4mm, such as 1mm, 2mm, and the like, and since the second n-type doped region 3 region with higher doping concentration can enhance the conductive effect, the distance between the negative electrode fine grid lines 7 can be increased appropriately, for example, the distance between every two negative electrode fine grid lines 7 can be set to be 4 mm. The doping concentration of the second n-type doping region 3 is higher, so that the resistivity of the second n-type doping region 3 is reduced while the carrier concentration is greatly improved, and the current collection capability is increased; therefore, the pitch of the negative electrode fine grid lines 7 can be appropriately increased, thereby being beneficial to further reducing the carrier recombination rate of the metal electrode and the semiconductor contact region.
In specific implementation, the elements of the first n-type doped region 2 and the second n-type doped region 3 may be group v elements, such as phosphorus; at this time, a PN junction is formed on the side of the p-type silicon substrate 1 close to the doped region, and the other side of the silicon substrate serves as a surface field.
In this embodiment, the first n-type doped region 2 and the plurality of second n-type doped regions 3 may be in the same plane. In this embodiment, the areas occupied by the first n-type doped region 2 and the second n-type doped region 3 may be the same or different, and are determined according to specific situations.
In the above embodiment, with reference to fig. 7-11 and fig. 13, each of the second n-type doped regions 3 is distributed at intervals in the first n-type doped region 2.
Specifically, the first n-type doped region 2 and the second n-type doped region 3 may be both in a strip structure, and the number of the second doped regions 3 may be determined according to actual conditions. A plurality of second n-type doped regions 3 may be disposed at equal intervals in the first n-type doped region 2 while dividing the first n-type doped region 2 into a plurality of first n-type doped sub-regions, each of which is spaced apart from each of the second n-type doped regions 3 in an alternating manner.
Since the high-concentration doped region has high conductivity but serious carrier recombination, it is preferable that the width of each second n-type doped region 3 is smaller than the distance between any two second n-type doped regions 3, that is, the width of each second n-type doped region 3 is smaller than the width of each first n-type doped sub-region.
Specifically, the width of each first n-type doped sub-region may be determined according to the widths of any two adjacent second n-type doped regions 3. In practical implementation, the width of each second n-type doped region 3 may be 20-300 μm, preferably 100-250 μm, and further preferably 200 μm, from which the width of each segment of the first n-type doped region 2 may be determined. In the present embodiment, the width of each second n-type doped region 3 is 20 μm, 100 μm, 200 μm, 300 μm, or the like. The distance between any two adjacent second n-type doped regions 3 is 300-. In this embodiment, the distance between any two adjacent second n-type doped regions 3 may be 300 μm, 800 μm, 1000 μm, 1200 μm, or the like.
In the above embodiments, the negative electrode fine grid line 7 and the second n-type doped region 3 form an included angle. That is, the negative electrode fine grid line 7 may be disposed to cross the second n-type doped region 3 at an arbitrary angle, but in order to ensure good transfer of carriers, it is preferable that the negative electrode fine grid line 7 be disposed perpendicularly to the second n-type doped region 3. Obviously, the negative electrode fine grid line 7 in the front electrode is also arranged at an angle to the first n-type doped region 2, and preferably, the negative electrode fine grid line 7 is arranged perpendicular to the first n-type doped region 2.
In the above embodiments, in order to optimize the concentration distribution of the doping element on the surface of the battery, each second n-type doping region 3 is a strip-shaped structure, and each second n-type doping region 3 is at least in contact with one section of the negative electrode fine grid line 7.
Specifically, since the negative electrode fine grid lines 7 may be in a line shape or a block shape, the second n-type doped regions 3 may be in contact with one or more negative electrode fine grid lines 7. Obviously, the first doped region 2 may also be in contact with one or more negative electrode grid lines 7.
Referring to fig. 12, in the above embodiment, on the first n-type doped region 2, a plurality of the second n-type doped regions 3 are respectively disposed at intervals along the length direction of the negative electrode fine gate line 7, and two corresponding second n-type doped regions 3 located below different negative electrode fine gate lines 7 are spaced from each other to optimize a current collection path. Wherein the second n-type doped regions spaced apart from each other are all in contact with the negative electrode fine grid line 7. In this embodiment, preferably, the second n-type doped regions 3 located below the different negative electrode fine grid lines 7 are arranged at equal intervals, so that current collection of each doped region is uniform. It is further preferable that the second n-type doped regions 3 under the same negative electrode fine grid line 7 are arranged at equal intervals, so that the current collection of each doped region is more uniform.
Specifically, the two ends of the first n-type doped region 2 in contact with the negative electrode fine grid line 7 may be in a tooth-shaped structure, and each second n-type doped region 3 may be embedded in a gap between every two tooth-shaped structures in the first n-type doped region 2. The distance between two corresponding second n-type doped regions 3 located below different negative electrode fine grid lines 7 can be determined according to actual conditions, and during actual design, each second n-type doped region 3 embedded in the gap of the first n-type doped region 2 along the length direction of the negative electrode fine grid line 7 is in contact with the negative electrode fine grid line 7.
In the above embodiments, the p-type doped region 4 may be disposed opposite to the first n-type doped region 2, or may be disposed opposite to the second n-type doped region 3, which is not limited in this embodiment.
In the embodiments described above with reference to fig. 1 and fig. 7, the aluminum-containing electrode 9 in the back electrode covers the bottom of the back passivation film 6 and contacts the p-type silicon substrate 1 through the back passivation film opening region 8.
Specifically, the aluminum-containing electrode 9 may be a sheet-like structure that completely covers the region where the back passivation film 6 is located, and allows the aluminum-containing electrode 9 to penetrate through the back passivation film and contact the P-type silicon substrate 1, and thus a single-sided solar cell is formed.
Referring to fig. 11-13, in the above embodiments, the aluminum-containing electrodes 9 in the back electrode are arranged at intervals in the back passivation film opening region 8, and at this time, a double-sided solar cell is formed.
Specifically, the aluminum-containing electrode 9 may have a stripe structure. In practice, a plurality of aluminum-containing electrodes 9 are selected and arranged in the rear passivation film opening region 8 at intervals of a predetermined pitch. At this time, the p-type doped region 4 is vertically disposed and in contact with each of the aluminum-containing electrodes 9.
With reference to fig. 13, in the above embodiments, in order to increase the open-circuit voltage of the battery, an aluminum doped layer 12 may be further disposed between the aluminum-containing electrode 9 and the p-type silicon substrate 1; doped aluminum layer 12 may be a hole doped layer, such as a group III doped hole doped layer formed by high temperature sintering during metallization. Preferably, a silicon-aluminum alloy layer 13 is further arranged between the aluminum doping layer 12 and the aluminum-containing electrode 9, and the silicon-aluminum alloy enables the contact resistance between silicon and aluminum to be significantly reduced, so that the current of the cell can be effectively transmitted, and the performance of the solar cell is improved.
It can be seen that, since the second n-type doped region 3 has a higher doping concentration, the conductivity of the surface of the emitter of the solar cell is enhanced, which is beneficial to improving the current collecting capability of the electrode, and therefore, the efficiency of the solar cell provided by the invention is greatly improved.
In summary, the solar cell provided by the invention greatly improves the concentration of the current carrier and also reduces the resistivity of the p-type doped region by doping the p-type doped region with higher concentration on the back surface of the p-type silicon substrate, thereby increasing the current collection capability. Meanwhile, the distance between aluminum-containing electrodes in the back electrode can be increased to reduce the contact area between the electrodes and the p-type doped region, the carrier recombination rate of the metal electrodes and the semiconductor contact region is reduced due to the relatively reduced area ratio of the metal electrodes, and the shading problem caused by metal can be greatly reduced due to the reduced area ratio of the metal electrodes, so that the light utilization rate of the solar cell is improved, and the efficiency of the cell is finally improved; furthermore, by providing the second n-type doped region 3 with higher doping concentration in the n-type doped layer, the concentration of carriers is greatly increased, and the resistivity of the second n-type doped region 3 is also reduced, so that the current collection capability is further increased. Meanwhile, the distance between the thin grid lines of the negative electrode in the front electrode can be increased, so that the contact area between the electrode and the n-type doped layer is reduced, the carrier recombination rate of a metal electrode and a semiconductor contact area is further reduced, and the efficiency of the battery is further improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (20)
1. A solar cell, comprising: a p-type silicon substrate; the n-type doping layer, the front passivation antireflection film and the front electrode are sequentially arranged from the front side of the p-type silicon substrate to the outside; the back passivation film and the back electrode are sequentially arranged from the back of the p-type silicon substrate to the outside; wherein,
a plurality of p-type doping regions are arranged between the back surface of the p-type silicon substrate and the back surface passivation film, and the doping concentration of the p-type doping regions is greater than that of the p-type silicon substrate; the back electrode is in contact with the p-type doped region.
2. The solar cell of claim 1, wherein each p-type doped region is spaced apart in a region of the back side of the p-type silicon substrate.
3. The solar cell of claim 2, wherein the width of each p-type doped region is smaller than the distance between any two adjacent p-type doped regions.
4. The solar cell of claim 3, wherein the p-type doped regions are strip-shaped structures, each p-type doped region having a width of 20-300 μm; the distance between the p-type doped regions is 300-2000 μm.
5. The solar cell according to claim 1, wherein a plurality of p-type doped regions are respectively arranged at intervals along a length direction of the back passivation film opening region in a region on the back surface of the p-type silicon substrate, and two corresponding p-type doped regions located below different back passivation film opening regions are mutually separated.
6. The solar cell of claim 1, wherein the p-type doped region has a doping concentration of 5 × 1018～5×1021Per cm3。
7. The solar cell according to any of claims 1 to 6, wherein the n-doped layer comprises a first n-doped region and a second n-doped region, the second n-doped region having a higher doping concentration than the first n-doped region; and the negative electrode fine grid line of the front electrode is in contact with the second n-type doped region.
8. The solar cell of claim 7, wherein each of the second n-type doped regions is spaced apart in the first n-type doped region.
9. The solar cell of claim 8, wherein the width of each second n-type doped region is smaller than the distance between any two adjacent second n-type doped regions.
10. The solar cell of claim 9, wherein the width of each of the second n-type doped regions is 20-300 μ ι η; the distance between the second n-type doped regions is 300-2000 μm.
11. The solar cell according to claim 7, wherein a plurality of second n-type doped regions are respectively disposed on the first n-type doped region at intervals along the length direction of the negative electrode fine grid line, and two corresponding second n-type doped regions located below different negative electrode fine grid lines are spaced from each other.
12. The solar cell of claim 11, wherein the second n-type doped regions under different negative electrode fine grid lines are arranged at equal intervals.
13. The solar cell of claim 11, wherein the second n-type doped regions under the same negative electrode fine grid line are arranged at equal intervals.
14. The solar cell of claim 7, wherein the negative electrode fine grid line is disposed at an angle to the second n-type doped region.
15. The solar cell of claim 14, wherein the negative electrode fine grid line is disposed perpendicular to the second n-type doped region.
16. The solar cell of claim 7, wherein the second n-type doped regions are in a strip structure, and each second n-type doped region is in contact with at least one segment of the negative electrode fine grid line.
17. The solar cell of claim 7, wherein the doping concentration of the second n-type doped region is 1 × 1020～5×1021Per cm3The doping concentration of the first n-type doped region is 1 × 1019～5×1020Per cm3。
18. The solar cell of claim 7, wherein the aluminum-containing electrode of the back electrode overlies the backside passivation film and contacts the p-type silicon substrate through an open-film region of the backside passivation film.
19. The solar cell according to claim 7, wherein the aluminum-containing electrodes of the rear surface electrode are arranged at intervals in the rear surface passivation film open region.
20. The solar cell of claim 7, wherein the front side passivated anti-reflective film and the back side passivated film are each comprised of one or more of silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, and silicon carbide.
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